CN106856212A - 太阳能电池模块 - Google Patents
太阳能电池模块 Download PDFInfo
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- CN106856212A CN106856212A CN201511010596.4A CN201511010596A CN106856212A CN 106856212 A CN106856212 A CN 106856212A CN 201511010596 A CN201511010596 A CN 201511010596A CN 106856212 A CN106856212 A CN 106856212A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 24
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 16
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 28
- 239000005864 Sulphur Substances 0.000 claims description 21
- 239000010949 copper Substances 0.000 claims description 17
- 229910052738 indium Inorganic materials 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 8
- 239000002322 conducting polymer Substances 0.000 claims description 7
- 229920001940 conductive polymer Polymers 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 7
- DICWILYNZSJYMQ-UHFFFAOYSA-N [In].[Cu].[Ag] Chemical compound [In].[Cu].[Ag] DICWILYNZSJYMQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- XCZLSTLZPIRTRY-UHFFFAOYSA-N oxogallium Chemical compound [Ga]=O XCZLSTLZPIRTRY-UHFFFAOYSA-N 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
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- XOCUXOWLYLLJLV-UHFFFAOYSA-N [O].[S] Chemical compound [O].[S] XOCUXOWLYLLJLV-UHFFFAOYSA-N 0.000 claims description 3
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims description 3
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 claims description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229920002521 macromolecule Polymers 0.000 claims description 3
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
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- AIDLAEPHWROGFI-UHFFFAOYSA-N 2-methylbenzene-1,3-dicarboxylic acid Chemical compound CC1=C(C(O)=O)C=CC=C1C(O)=O AIDLAEPHWROGFI-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229920000144 PEDOT:PSS Polymers 0.000 description 1
- GOOHAUXETOMSMM-UHFFFAOYSA-N Propylene oxide Chemical compound CC1CO1 GOOHAUXETOMSMM-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
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- 230000003467 diminishing effect Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- YDNLNVZZTACNJX-UHFFFAOYSA-N isocyanatomethylbenzene Chemical compound O=C=NCC1=CC=CC=C1 YDNLNVZZTACNJX-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 150000003233 pyrroles Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- FRGPKMWIYVTFIQ-UHFFFAOYSA-N triethoxy(3-isocyanatopropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCCN=C=O FRGPKMWIYVTFIQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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Abstract
本发明公开了一种太阳能电池模块,包括透明基板、第一太阳能电池单元、硅晶太阳能电池、以及间隔物。第一太阳能电池单元位于透明基板与硅晶太阳能电池之间,且第一太阳能电池单元包括第一电极、第二电极与位于第一与第二电极之间的I-III-VI族半导体层,其至少包括镓(Ga)与硫(S),且能隙大于硅晶的能隙。而且,硅晶太阳能电池与第一太阳能电池单元是由所述间隔物分隔。
Description
技术领域
本发明有关于一种太阳能电池技术,且特别是有关于一种太阳能电池模块。
背景技术
传统硅晶太阳能电池封装结构,由入光面起始的结构依序为玻璃/EVA/硅晶电池/EVA/Tedlar。硅晶太阳能电池上方以玻璃及EVA等作为正面封装材料,硅晶太阳能电池下方通常以乙烯/醋酸乙烯酯共聚物(EthyleneVinyl Acetate,EVA)封装胶膜或者如聚乙烯醇缩丁醛(Polyvinyl Butyral,PVB)、硅胶等材料作为太阳能电池的封装材料。
然而,由于EVA胶膜随着时间受光照、热、氧等作用,EVA胶膜吸收UV光后,材料因化学结构产生降解,颜色由透明转变成黄褐色,黄化为EVA胶膜使用上最大的缺点。EVA胶膜黄化后,使得入射光透过率下降,太阳能电池模块随使用时间增长,因太阳能电池上方的EVA封装胶膜黄化而造成效率递减,此为目前太阳能电池及模块对于寿命的最大问题。
发明内容
本发明提供一种太阳能电池模块,能解决封装材料因吸收UV光产生黄化的问题,并具有能兼具封装与发电功效的构造。
本发明的太阳能电池模块,包括透明基板、第一太阳能电池单元、硅晶太阳能电池以及间隔物。第一太阳能电池单元位于透明基板与硅晶太阳能电池之间,且第一太阳能电池单元包括第一电极、第二电极与位于第一与第二电极之间的I-III-VI族半导体层至少包括镓(Ga)与硫(S),其能隙大于硅晶的能隙。而且,硅晶太阳能电池与第一太阳能电池单元是由所述间隔物分隔。
在本发明的一实施例中,上述第一太阳能电池单元吸收波长800nm以下的光。
在本发明的一实施例中,上述透明基板包括玻璃或塑料。
在本发明的一实施例中,上述I-III-VI族半导体层的材料包括铜铟镓硫(Cu(In,Ga)S2)、铜镓硫(CuGaS2)、铜银铟镓硫(Cu,Ag)(In,Ga)S2)、铜银镓硫(Cu,Ag)GaS2)、铜铟镓氧硫(Cu(In,Ga)(O,S)2)、铜镓氧硫(CuGa(O,S)2)、铜银铟镓氧硫(Cu,Ag)(In,Ga)(O,S)2)或铜铟镓硒硫(Cu(In,Ga)(Se,S)2)。
在本发明的一实施例中,上述第一与第二电极的材料各自独立包括透明导电膜、金属、导电高分子、有机-无机混合物或极性材料。
在本发明的一实施例中,上述第一与第二电极分别位于I-III-VI族半导体层的厚度方向的两面上。
在本发明的一实施例中,上述第一与第二电极分别位于I-III-VI族半导体层的对边,且第一与第二电极均与透明基板与间隔物接触。
在本发明的一实施例中,上述硅晶太阳能电池包括上部电极、下部电极与位于上部与下部电极之间的硅晶吸收层,且上部电极接近间隔物、下部电极远离间隔物。
在本发明的一实施例中,上述上部与下部电极的材料各自独立包括透明导电膜、金属、导电高分子、有机-无机混合物或极性材料。
在本发明的一实施例中,上述第一电极、第二电极、上部电极与下部电极具有位置相对的多个孔洞。
在本发明的一实施例中,上述间隔物全面地覆盖硅晶太阳能电池。
在本发明的一实施例中,上述间隔物部分覆盖硅晶太阳能电池,以于硅晶太阳能电池与第一太阳能电池单元之间构成一空间。
在本发明的一实施例中,上述空间内具有空气或惰性气体。
在本发明的一实施例中,上述太阳能电池模块还可包括背板与高分子绝缘物,其中背板是经由高分子绝缘物贴合于上述硅晶太阳能电池的出光表面。
在本发明的一实施例中,上述太阳能电池模块还可包括一外加基板、第二太阳能电池单元与封装层。外加基板位于硅晶太阳能电池的出光表面,第二太阳能电池单元则位于外加基板与硅晶太阳能电池之间。封装层是位于硅晶太阳能电池与第二太阳能电池单元之间。
在本发明的一实施例中,上述第二太阳能电池单元的吸收层的能隙可小于硅晶的能隙。
在本发明的一实施例中,上述间隔物系设置在硅晶太阳能电池周围且厚度大于硅晶太阳能电池的厚度。
在本发明的一实施例中,上述透明基板的面积大于硅晶太阳能电池的面积。
基于上述,本发明在基板与硅晶太阳能电池之间加设I-III-VI族半导体层,不但具有模块封装功效、解决封装胶合材料照光劣化及不耐水氧等问题,还能搭配电极而得到兼具发电功效的太阳能电池模块。
为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附图式作详细说明如下。
附图说明
图1是依照本发明的第一实施例的一种太阳能电池模块的剖面示意图。
图2是依照本发明的第二实施例的一种太阳能电池模块的剖面示意图。
图3是依照本发明的第三实施例的一种太阳能电池模块的剖面示意图。
图4是依照本发明的第四实施例的一种太阳能电池模块的剖面示意图。
图5是依照本发明的第五实施例的一种太阳能电池模块的剖面示意图。
图6是依照本发明的第六实施例的一种太阳能电池模块的剖面示意图。
【符号说明】
100、600:透明基板
100a:表面
102、602:硅晶太阳能电池
102a:出光表面
104、200、604:第一太阳能电池单元
106、202、606:第一电极
108、204、608:第二电极
110、206、610:I-III-VI族半导体层
112、300、612a、612b:间隔物
114:上部电极
116:下部电极
118:硅晶吸收层
206a、206b:对边
302:空间
400、616:背板
402:高分子绝缘物
500:外加基板
502:第二太阳能电池单元
504:封装层
614:太阳能串焊带
d1、d2:厚度
具体实施方式
现将参照图式来更加详尽地描述发明概念的实施例,但仍可使用许多不同的形式来实施本发明。在图式中,为了清楚起见,各个结构及区域的相对尺寸及位置可能缩小或放大。另应理解的是,虽然本文使用“第一”、“第二”...等来描述不同的结构或区域,但是这些结构或区域不应当受限于这些用词;也就是说,以下所讨论的第一表面、区域或结构可以被称为第二表面、区域或结构,而不违背实施例的教示。
图1是依照本发明的第一实施例的一种太阳能电池模块的剖面示意图。
请参照图1,第一实施例的太阳能电池模块包括透明基板100、硅晶太阳能电池102与第一太阳能电池单元104,其中透明基板100例如玻璃或塑料;硅晶太阳能电池102是位于透明基板100受光照射的相对表面100a,也就是说,若是光线从透明基板100的正面入射,则硅晶太阳能电池102的位置会在透明基板100的背面。而在透明基板100与硅晶太阳能电池102之间设有第一太阳能电池单元104,其中第一太阳能电池单元104包括第一电极106、第二电极108与位于第一与第二电极106和108之间的I-III-VI族半导体层110,其中第一与第二电极106和108分别位于I-III-VI族半导体层110的厚度方向的两面上。而在硅晶太阳能电池102与第一太阳能电池单元104具有全面地覆盖硅晶太阳能电池102之间隔物112将两者分隔。上述I-III-VI族半导体层110可藉由真空(镀膜)或非真空(涂布)方式形成在透明基板100的单侧表面100a。
在本实施例中,第一太阳能电池单元104可吸收波长800nm以下的光,例如吸收波长500nm以下的光。因此,可使用至少包括镓(Ga)与硫(S)的I-III-VI族半导体层110,譬如铜铟镓硫(Cu(In,Ga)S2)、铜镓硫(CuGaS2)、铜银铟镓硫(Cu,Ag)(In,Ga)S2)、铜银镓硫(Cu,Ag)GaS2)、铜铟镓氧硫(Cu(In,Ga)(O,S)2)、铜镓氧硫(CuGa(O,S)2)、铜银铟镓氧硫(Cu,Ag)(In,Ga)(O,S)2)或铜铟镓硒硫(Cu(In,Ga)(Se,S)2)。上述I-III-VI族半导体材料的能隙大概在1.5eV~2.4eV之间,因此能在光进入透明基板100后,利用第一太阳能电池单元104吸收短波长入射光,进而避免如乙烯/醋酸乙烯酯共聚物(EVA)、PVB、硅胶之类的间隔物112因吸收UV光而黄化的问题,并能以第一与第二电极106和108将产生的电能传导至外部电路(未绘示)。第一与第二电极106和108的材料各自独立如透明导电膜、金属、导电高分子、有机-无机混合物或极性材料,且长波-红外光可穿透型的电极,其中所述透明导电膜(Transparent Conducting Oxides,TCO)例如是铟锡氧化物(ITO)、氧化锌(ZnO)、氧化锡(SnO2)、掺杂镓的氧化锌(GZO)、掺杂铝的氧化锌(AZO)或共掺杂的氧化锡(LFTO)。其中所述金属可为钼(Mo)、金(Au)、银(Ag)、铝(Al)、铜(Cu)或镍(Ni)。其中所述导电高分子例如为聚二氧乙基噻吩(PEDOT)、聚苯乙烯磺酸(PSS)、聚二氧乙基噻吩/聚苯乙烯磺酸(PEDOT:PSS)聚苯硫醚(PPS)、聚吡咯(PPy)、聚噻吩(PT)或聚苯胺/聚苯乙烯(PANDB/PS)。其中所述有机-无机混合物例如为1,3-二异氰酸根合甲苯与α-氢-ω-羟基-聚[氧(甲基-1,2-乙二烷基)]的聚合物(poly(propylene glycol)tolylene 2,4-diisocyanate terminated(PPGTDI))、甲基环氧乙烷与环氧乙烷和双(2-氨丙基)醚的聚合物(poly(propyleneglycol)-block-poly(ethylene glycol)-block-poly(propylene glycol)bis(2-aminopropyl ether)(ED2000))、或3-异氰丙基三乙氧基硅烷(3-isocyanatepropyltriethoxysilane(ICPTES))。所述极性材料例如熔融态硼化镁、或是纳米碳管薄膜(CNT)等。当第一与第二电极106和108是不透光的材料时,可制作成导线或图案化的导电层等。
至于硅晶太阳能电池102一般具有上部电极114、下部电极116与位于上部与下部电极114和116之间的硅晶吸收层118,且上部电极114接近间隔物112、下部电极116远离间隔物112。上部与下部电极114和116的材料各自独立如透明导电膜、金属、导电高分子、有机-无机混合物或极性材料。而且,当上部与下部电极114和116是不透光的材料时,至少光入射表面的上部电极114可制作成导线或图案化的导电层,且/或上部电极114与下部电极116可与上述第一与第二电极106和108具有位置相对的多个孔洞(未绘示),以供光线穿透。
根据第一实施例所述,由于第一太阳能电池单元104的存在,所以能避免太阳能电池模块内部的封装材料黄化,并可降低硅晶太阳能电池102受短波照射,故热辐射间接加热硅晶效应也会降低。另外,吸收短波长光的第一太阳能电池单元104也具有发电功能,所以能提升光谱利用率,故总发电量增加。此外,本实施例的太阳能电池模块只用单片透明基板100,所以模块重量也比其他堆叠式太阳能电池模块少,并因此模块轻量运用广、搬运轻松,并可减少成本。
图2是依照本发明的第二实施例的一种太阳能电池模块的剖面示意图,其中使用与图1相同的元件符号来代表相同或类似的构件。
请参照图2,第二实施例的太阳能电池模块与图1的差异在于第一太阳能电池单元200的结构。在本实施例中,第一太阳能电池单元200包括第一电极202、第二电极204与位于第一与第二电极202和204之间的I-III-VI族半导体层206,其中I-III-VI族半导体层206的材料选择可参照第一实施例,故不再赘述。而第一电极202与第二电极204则分别位于I-III-VI族半导体层206的对边206a和206b,且第一与第二电极202和204均与透明基板100与间隔物112接触。这样配置的第一与第二电极202和204因为不挡光,所以可自透明导电膜、金属、导电高分子、有机-无机混合物或极性材料中选择电阻低、导电率高的金属。此外,本实施例中的I-III-VI族半导体层206除了如图所示填满第一与第二电极202和204之间,也可只附着在透明基板100上,而不与间隔物112接触,藉此缩减I-III-VI族半导体层206的厚度,以使吸收短波长光与让长波长光透过的效果达到平衡。
图3是依照本发明的第三实施例的一种太阳能电池模块的剖面示意图,其中使用与图1相同的元件符号来代表相同或类似的构件。
请参照图3,第三实施例的太阳能电池模块与图1的差异在于间隔物300的结构。在本实施例中,间隔物300仅部分覆盖硅晶太阳能电池102,所以会在硅晶太阳能电池102与第一太阳能电池单元104之间构成一空间302,其中空间302内具有空气或惰性气体。由于硅晶太阳能电池102与第一太阳能电池单元104之间大部分区域没有间隔物,所以有利于光线通过而不被其他结构吸收。
图4是依照本发明的第四实施例的一种太阳能电池模块的剖面示意图,其中使用与图1相同的元件符号来代表相同或类似的构件。
请参照图4,第四实施例的太阳能电池模块与图1的差异在于硅晶太阳能电池102的出光表面102a上有经由高分子绝缘物402贴合的背板400,其中背板400例如Tedlar,而高分子绝缘物402例如EVA、PVB或硅胶。
图5是依照本发明的第五实施例的一种太阳能电池模块的剖面示意图,其中使用与图1相同的元件符号来代表相同或类似的构件。
请参照图5,第五实施例的太阳能电池模块与图1的差异在于硅晶太阳能电池102的出光表面102a还外加一外加基板500、第二太阳能电池单元502与封装层504。第二太阳能电池单元502位于外加基板500与硅晶太阳能电池102之间,且利用封装层504贴合硅晶太阳能电池102。第二太阳能电池单元502的吸收层的能隙若是小于硅晶的能隙,可用来吸收没被硅晶太阳能电池102吸收的光,并藉由其中的电极(未绘示)将产生的电能传导出来。
图6是依照本发明的第六实施例的一种太阳能电池模块的剖面示意图。
请参照图6,第六实施例的太阳能电池模块包括透明基板600、硅晶太阳能电池602、太阳能电池单元604(包括第一电极606、第二电极608与I-III-VI族半导体层610)、间隔物612a和612b。本实施例中的各个构件均可参照上述各实施例所述,故不再赘述。
在本实施例中的硅晶太阳能电池602之间是由太阳能串焊带(PVribbon)614串联,且间隔物612a和612b是设置在硅晶太阳能电池602周围,所以间隔物612a和612b的厚度d1要大于硅晶太阳能电池602的厚度d2,且透明基板600的面积大于硅晶太阳能电池602的面积。图6中的硅晶太阳能电池602与太阳能串焊带614虽稍分离,但实际上的构造是太阳能串焊带614直接焊接于硅晶太阳能电池602的电极(未绘示),且有背板616让硅晶太阳能电池602设置于其上,故硅晶太阳能电池602与太阳能电池单元604的第二电极608并不会接触或电性连接。另外,因为制程上可能会先分别在太阳能电池单元604涂上间隔物612a并在背板616涂上间隔物612b,之后再结合间隔物612a和612b完成封装,所以图中的间隔物612a和612b有两层,但本发明并不以此为限。
综上所述,本发明藉由透明基板与硅晶太阳能电池之间所设置的太阳能电池单元来吸收短波长的光(如UV光),因此能避免太阳能电池模块内部的封装材料黄化,并可降低硅晶短波,故热辐射间接加热硅晶效应也会降低。由于上述封装材料不易黄化,所以能使模块寿命提升并且入射光不会被阻挡。另外,吸收短波长光的太阳能电池单元也具有发电功能,所以能增加额外效用,并因而使$/Wp降低,并因此提升光谱利用率,故总发电量增加。此外,本发明的太阳能电池模块可只用单片透明基板(如玻璃),所以随着玻璃片数减少,故模块重量也会减少,并因此模块轻量运用广、搬运轻松,并可减少成本。以上功效能使整体单位发电成本(levelized costof electricity,LCOE)下降。
虽然本发明已以实施例公开如上,然其并非用以限定本发明,任何所属技术领域中具有通常知识者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,故本发明的保护范围当视权利要求保护范围所界定者为准。
Claims (18)
1.一种太阳能电池模块,其特征在于包括:
透明基板;
硅晶太阳能电池;
第一太阳能电池单元,位于所述透明基板与所述硅晶太阳能电池之间,且所述第一太阳能电池单元包括第一电极、第二电极与位于所述第一电极与所述第二电极之间的I-III-VI族半导体层,其中所述I-III-VI族半导体层至少包括镓与硫且能隙大于硅晶的能隙;以及
间隔物,分隔所述硅晶太阳能电池与所述第一太阳能电池单元。
2.如权利要求1所述的太阳能电池模块,其特征在于,所述第一太阳能电池单元吸收波长800nm以下的光。
3.如权利要求1所述的太阳能电池模块,其特征在于,所述透明基板包括玻璃或塑料。
4.如权利要求1所述的太阳能电池模块,其特征在于,所述I-III-VI族半导体层的材料包括铜铟镓硫、铜镓硫、铜银铟镓硫、铜银镓硫、铜铟镓氧硫、铜镓氧硫、铜银铟镓氧硫或铜铟镓硒硫。
5.如权利要求1所述的太阳能电池模块,其特征在于,所述第一电极与所述第二电极的材料各自独立包括透明导电膜、金属、导电高分子、有机-无机混合物或极性材料。
6.如权利要求1所述的太阳能电池模块,其特征在于,所述第一电极与所述第二电极分别位于所述I-III-VI族半导体层的厚度方向的两面上。
7.如权利要求1所述的太阳能电池模块,其特征在于,所述第一电极与所述第二电极分别位于所述I-III-VI族半导体层的对边,且所述第一电极与所述第二电极均与所述透明基板与所述间隔物接触。
8.如权利要求1所述的太阳能电池模块,其特征在于,所述硅晶太阳能电池包括上部电极、下部电极与位于所述上部电极与所述下部电极之间的硅晶吸收层,所述上部电极接近所述间隔物且所述下部电极远离所述间隔物。
9.如权利要求8所述的太阳能电池模块,其特征在于,所述上部电极与所述下部电极的材料各自独立包括透明导电膜、金属、导电高分子、有机-无机混合物或极性材料。
10.如权利要求8所述的太阳能电池模块,其特征在于,所述第一电极、所述第二电极、所述上部电极与所述下部电极具有位置相对的多个孔洞。
11.如权利要求1所述的太阳能电池模块,其特征在于,所述间隔物全面地覆盖所述硅晶太阳能电池。
12.如权利要求1所述的太阳能电池模块,其特征在于,所述间隔物部分覆盖所述硅晶太阳能电池,以于所述硅晶太阳能电池与所述第一太阳能电池单元之间构成一空间。
13.如权利要求12所述的太阳能电池模块,其特征在于,所述空间内具有空气或惰性气体。
14.如权利要求1所述的太阳能电池模块,其特征在于,所述太阳能电池模块还包括背板与高分子绝缘物,其中所述背板是经由所述高分子绝缘物贴合于所述硅晶太阳能电池的出光表面。
15.如权利要求1所述的太阳能电池模块,其特征在于,所述太阳能电池模块还包括:
一外加基板,位于所述硅晶太阳能电池的出光表面;
第二太阳能电池单元,位于所述外加基板与所述硅晶太阳能电池之间;以及
封装层,位于所述硅晶太阳能电池与所述第二太阳能电池单元之间。
16.如权利要求15所述的太阳能电池模块,其特征在于,所述第二太阳能电池单元的吸收层的能隙小于硅晶的能隙。
17.如权利要求1所述的太阳能电池模块,其特征在于,所述间隔物设置在所述硅晶太阳能电池周围且厚度大于所述硅晶太阳能电池的厚度。
18.如权利要求1所述的太阳能电池模块,其特征在于,所述透明基板的面积大于所述硅晶太阳能电池的面积。
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TW104140994A TWI596791B (zh) | 2015-12-07 | 2015-12-07 | 太陽能電池模組 |
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US20200161486A1 (en) * | 2018-11-20 | 2020-05-21 | Kyocera Document Solutions Inc. | Method and apparatus for channeling light for stacked solar cell |
WO2024071284A1 (ja) * | 2022-09-28 | 2024-04-04 | 株式会社カネカ | 太陽電池モジュールの製造方法、および、太陽電池モジュール |
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