CN105506578B - 一种大面积MoS2薄膜生长方法 - Google Patents
一种大面积MoS2薄膜生长方法 Download PDFInfo
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- CN105506578B CN105506578B CN201510991088.2A CN201510991088A CN105506578B CN 105506578 B CN105506578 B CN 105506578B CN 201510991088 A CN201510991088 A CN 201510991088A CN 105506578 B CN105506578 B CN 105506578B
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- film
- large area
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- growth method
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims abstract description 26
- 229910052961 molybdenite Inorganic materials 0.000 claims abstract description 17
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 7
- 239000005864 Sulphur Substances 0.000 claims abstract description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 7
- 239000011733 molybdenum Substances 0.000 claims abstract description 7
- 230000001681 protective effect Effects 0.000 claims abstract description 7
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 239000000843 powder Substances 0.000 claims abstract description 6
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000003708 ampul Substances 0.000 claims abstract description 3
- 239000010453 quartz Substances 0.000 claims abstract description 3
- 238000010792 warming Methods 0.000 claims abstract description 3
- 239000010408 film Substances 0.000 claims description 35
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000035484 reaction time Effects 0.000 abstract description 2
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 11
- 239000007789 gas Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001237 Raman spectrum Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002189 fluorescence spectrum Methods 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 238000009423 ventilation Methods 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 graphite Alkene Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510991088.2A CN105506578B (zh) | 2015-12-24 | 2015-12-24 | 一种大面积MoS2薄膜生长方法 |
Applications Claiming Priority (1)
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CN201510991088.2A CN105506578B (zh) | 2015-12-24 | 2015-12-24 | 一种大面积MoS2薄膜生长方法 |
Publications (2)
Publication Number | Publication Date |
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CN105506578A CN105506578A (zh) | 2016-04-20 |
CN105506578B true CN105506578B (zh) | 2018-06-29 |
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CN201510991088.2A Active CN105506578B (zh) | 2015-12-24 | 2015-12-24 | 一种大面积MoS2薄膜生长方法 |
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CN (1) | CN105506578B (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109234702A (zh) * | 2018-11-08 | 2019-01-18 | 清华大学 | 一种单晶二硫化钼器件阵列的制备方法 |
CN112695381A (zh) * | 2020-12-22 | 2021-04-23 | 中国科学院重庆绿色智能技术研究院 | 一种快速生长超薄大尺寸单晶过渡金属硫/硒化物的方法 |
CN116190497B (zh) * | 2023-04-27 | 2023-07-18 | 长春理工大学 | 一种基于强耦合MoS2/MoO3异质结光电探测器的制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579419A (zh) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | 一种石墨烯/MoS2/Si 异质结薄膜太阳能电池及其制备方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080119098A1 (en) * | 2006-11-21 | 2008-05-22 | Igor Palley | Atomic layer deposition on fibrous materials |
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2015
- 2015-12-24 CN CN201510991088.2A patent/CN105506578B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103579419A (zh) * | 2013-11-13 | 2014-02-12 | 苏州科技学院 | 一种石墨烯/MoS2/Si 异质结薄膜太阳能电池及其制备方法 |
Non-Patent Citations (1)
Title |
---|
"单层二硫化钼的制备及光学性质研究";周朝迅;《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》;20150915(第9期);第B014-30页 * |
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CN105506578A (zh) | 2016-04-20 |
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Application publication date: 20160420 Assignee: Chongqing Blue Times Energy Saving Technology Co.,Ltd. Assignor: CHONGQING INSTITUTE OF GREEN AND INTELLIGENT TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Contract record no.: X2024980012666 Denomination of invention: A method for growing large-area MoS2thin films Granted publication date: 20180629 License type: Common License Record date: 20240902 Application publication date: 20160420 Assignee: Chongqing Dongfang Filter Co.,Ltd. Assignor: CHONGQING INSTITUTE OF GREEN AND INTELLIGENT TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Contract record no.: X2024980012528 Denomination of invention: A method for growing large-area MoS2thin films Granted publication date: 20180629 License type: Common License Record date: 20240902 |
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Application publication date: 20160420 Assignee: CHONGQING ENDURANCE & TOKYO KEISO INSTRUMENT Co.,Ltd. Assignor: CHONGQING INSTITUTE OF GREEN AND INTELLIGENT TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Contract record no.: X2024980013000 Denomination of invention: A method for growing large-area MoS2thin films Granted publication date: 20180629 License type: Common License Record date: 20240903 Application publication date: 20160420 Assignee: Zhongan chain technology (Chongqing) Co.,Ltd. Assignor: CHONGQING INSTITUTE OF GREEN AND INTELLIGENT TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Contract record no.: X2024980012980 Denomination of invention: A method for growing large-area MoS2thin films Granted publication date: 20180629 License type: Common License Record date: 20240903 Application publication date: 20160420 Assignee: Chongqing Hechuang Nanotechnology Co.,Ltd. Assignor: CHONGQING INSTITUTE OF GREEN AND INTELLIGENT TECHNOLOGY, CHINESE ACADEMY OF SCIENCES Contract record no.: X2024980012971 Denomination of invention: A method for growing large-area MoS2thin films Granted publication date: 20180629 License type: Common License Record date: 20240903 |