CN105502928B - 一种铝硅酸盐玻璃用组合物及其用途 - Google Patents
一种铝硅酸盐玻璃用组合物及其用途 Download PDFInfo
- Publication number
- CN105502928B CN105502928B CN201511024884.5A CN201511024884A CN105502928B CN 105502928 B CN105502928 B CN 105502928B CN 201511024884 A CN201511024884 A CN 201511024884A CN 105502928 B CN105502928 B CN 105502928B
- Authority
- CN
- China
- Prior art keywords
- moles
- silicate glass
- alumina silicate
- glass
- composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 239000005368 silicate glass Substances 0.000 title claims abstract description 50
- 239000000203 mixture Substances 0.000 title claims abstract description 33
- 239000011521 glass Substances 0.000 claims abstract description 31
- 238000000034 method Methods 0.000 claims abstract description 21
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 8
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 8
- 230000004927 fusion Effects 0.000 claims abstract description 6
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910000272 alkali metal oxide Inorganic materials 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 2
- 230000005611 electricity Effects 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 5
- 239000002585 base Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 8
- 239000005357 flat glass Substances 0.000 description 6
- 238000000137 annealing Methods 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910000323 aluminium silicate Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000000872 buffer Substances 0.000 description 1
- 239000007853 buffer solution Substances 0.000 description 1
- 239000008395 clarifying agent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 238000009774 resonance method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511024884.5A CN105502928B (zh) | 2015-12-30 | 2015-12-30 | 一种铝硅酸盐玻璃用组合物及其用途 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511024884.5A CN105502928B (zh) | 2015-12-30 | 2015-12-30 | 一种铝硅酸盐玻璃用组合物及其用途 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105502928A CN105502928A (zh) | 2016-04-20 |
CN105502928B true CN105502928B (zh) | 2018-12-11 |
Family
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CN201511024884.5A Active CN105502928B (zh) | 2015-12-30 | 2015-12-30 | 一种铝硅酸盐玻璃用组合物及其用途 |
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CN (1) | CN105502928B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108298811B (zh) * | 2018-04-25 | 2021-09-07 | 成都光明光电股份有限公司 | 玻璃组合物 |
KR20220025018A (ko) * | 2019-06-26 | 2022-03-03 | 코닝 인코포레이티드 | 열 이력에 둔감한 무알칼리 유리들 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103910487A (zh) * | 2012-12-28 | 2014-07-09 | 安瀚视特控股株式会社 | 显示器用玻璃基板及其制造方法 |
CN104326664A (zh) * | 2013-12-31 | 2015-02-04 | 东旭集团有限公司 | 一种含有氧化锗和氧化镓的铝硅酸盐玻璃 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5874316B2 (ja) * | 2010-10-27 | 2016-03-02 | 日本電気硝子株式会社 | 無アルカリガラス |
KR101601754B1 (ko) * | 2011-12-29 | 2016-03-09 | 니폰 덴키 가라스 가부시키가이샤 | 무알칼리 유리 |
CN104326662B (zh) * | 2013-12-31 | 2017-07-04 | 东旭集团有限公司 | 一种不含硼的无碱铝硅酸盐玻璃 |
-
2015
- 2015-12-30 CN CN201511024884.5A patent/CN105502928B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103910487A (zh) * | 2012-12-28 | 2014-07-09 | 安瀚视特控股株式会社 | 显示器用玻璃基板及其制造方法 |
CN104326664A (zh) * | 2013-12-31 | 2015-02-04 | 东旭集团有限公司 | 一种含有氧化锗和氧化镓的铝硅酸盐玻璃 |
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Publication number | Publication date |
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CN105502928A (zh) | 2016-04-20 |
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Effective date of registration: 20200914 Address after: 050035 No. 9, the Yellow River Avenue, hi tech Zone, Hebei, Shijiazhuang Patentee after: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: The 100075 Beijing Seahawks Fengtai District Science City Road No. 9 Building No. 2 room 266 (Park) Co-patentee before: TUNGHSU GROUP Co.,Ltd. Patentee before: TUNGHSU TECHNOLOGY GROUP Co.,Ltd. |
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Application publication date: 20160420 Assignee: Shandong shengzhao New Material Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2021110000043 Denomination of invention: Composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20211020 |
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Application publication date: 20160420 Assignee: Guizhou Yirong Photoelectric Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2022110000004 Denomination of invention: Composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20220128 |
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Application publication date: 20160420 Assignee: Xinjiang Tengyu Optoelectronics Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2022990000482 Denomination of invention: A kind of composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20220815 |
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Application publication date: 20160420 Assignee: Shaanxi Dongcheng Haoyu New Material Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2022110000016 Denomination of invention: A kind of composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20220905 |
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