CN105502928A - 一种铝硅酸盐玻璃用组合物及其用途 - Google Patents
一种铝硅酸盐玻璃用组合物及其用途 Download PDFInfo
- Publication number
- CN105502928A CN105502928A CN201511024884.5A CN201511024884A CN105502928A CN 105502928 A CN105502928 A CN 105502928A CN 201511024884 A CN201511024884 A CN 201511024884A CN 105502928 A CN105502928 A CN 105502928A
- Authority
- CN
- China
- Prior art keywords
- mole
- silicate glass
- alumina silicate
- glass composition
- glass
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 42
- 239000005354 aluminosilicate glass Substances 0.000 title abstract 8
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 51
- 238000000034 method Methods 0.000 claims abstract description 28
- 238000002844 melting Methods 0.000 claims abstract description 10
- 230000008018 melting Effects 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 239000005368 silicate glass Substances 0.000 claims description 52
- 230000004927 fusion Effects 0.000 claims description 6
- 229910005793 GeO 2 Inorganic materials 0.000 claims description 5
- 239000004973 liquid crystal related substance Substances 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 27
- 239000000758 substrate Substances 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- 239000005357 flat glass Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910001018 Cast iron Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012445 acidic reagent Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910001413 alkali metal ion Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052810 boron oxide Inorganic materials 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- 230000004580 weight loss Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
- C03C3/085—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal
- C03C3/087—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound containing an oxide of a divalent metal containing calcium oxide, e.g. common sheet or container glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511024884.5A CN105502928B (zh) | 2015-12-30 | 2015-12-30 | 一种铝硅酸盐玻璃用组合物及其用途 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201511024884.5A CN105502928B (zh) | 2015-12-30 | 2015-12-30 | 一种铝硅酸盐玻璃用组合物及其用途 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105502928A true CN105502928A (zh) | 2016-04-20 |
CN105502928B CN105502928B (zh) | 2018-12-11 |
Family
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Family Applications (1)
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---|---|---|---|
CN201511024884.5A Active CN105502928B (zh) | 2015-12-30 | 2015-12-30 | 一种铝硅酸盐玻璃用组合物及其用途 |
Country Status (1)
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CN (1) | CN105502928B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108298811A (zh) * | 2018-04-25 | 2018-07-20 | 成都光明光电股份有限公司 | 玻璃组合物 |
CN114174234A (zh) * | 2019-06-26 | 2022-03-11 | 康宁公司 | 对热历程不敏感的无碱玻璃 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012106919A (ja) * | 2010-10-27 | 2012-06-07 | Nippon Electric Glass Co Ltd | 無アルカリガラス |
CN103910487A (zh) * | 2012-12-28 | 2014-07-09 | 安瀚视特控股株式会社 | 显示器用玻璃基板及其制造方法 |
CN104039727A (zh) * | 2011-12-29 | 2014-09-10 | 日本电气硝子株式会社 | 无碱玻璃 |
CN104326662A (zh) * | 2013-12-31 | 2015-02-04 | 东旭集团有限公司 | 一种不含硼的无碱铝硅酸盐玻璃 |
CN104326664A (zh) * | 2013-12-31 | 2015-02-04 | 东旭集团有限公司 | 一种含有氧化锗和氧化镓的铝硅酸盐玻璃 |
-
2015
- 2015-12-30 CN CN201511024884.5A patent/CN105502928B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012106919A (ja) * | 2010-10-27 | 2012-06-07 | Nippon Electric Glass Co Ltd | 無アルカリガラス |
CN104039727A (zh) * | 2011-12-29 | 2014-09-10 | 日本电气硝子株式会社 | 无碱玻璃 |
CN103910487A (zh) * | 2012-12-28 | 2014-07-09 | 安瀚视特控股株式会社 | 显示器用玻璃基板及其制造方法 |
CN104326662A (zh) * | 2013-12-31 | 2015-02-04 | 东旭集团有限公司 | 一种不含硼的无碱铝硅酸盐玻璃 |
CN104326664A (zh) * | 2013-12-31 | 2015-02-04 | 东旭集团有限公司 | 一种含有氧化锗和氧化镓的铝硅酸盐玻璃 |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108298811A (zh) * | 2018-04-25 | 2018-07-20 | 成都光明光电股份有限公司 | 玻璃组合物 |
CN108298811B (zh) * | 2018-04-25 | 2021-09-07 | 成都光明光电股份有限公司 | 玻璃组合物 |
CN114174234A (zh) * | 2019-06-26 | 2022-03-11 | 康宁公司 | 对热历程不敏感的无碱玻璃 |
CN114174234B (zh) * | 2019-06-26 | 2024-09-10 | 康宁公司 | 对热历程不敏感的无碱玻璃 |
Also Published As
Publication number | Publication date |
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CN105502928B (zh) | 2018-12-11 |
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Effective date of registration: 20200914 Address after: 050035 No. 9, the Yellow River Avenue, hi tech Zone, Hebei, Shijiazhuang Patentee after: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Address before: The 100075 Beijing Seahawks Fengtai District Science City Road No. 9 Building No. 2 room 266 (Park) Co-patentee before: TUNGHSU GROUP Co.,Ltd. Patentee before: TUNGHSU TECHNOLOGY GROUP Co.,Ltd. |
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Application publication date: 20160420 Assignee: Shandong shengzhao New Material Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2021110000043 Denomination of invention: Composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20211020 |
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Application publication date: 20160420 Assignee: Guizhou Yirong Photoelectric Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2022110000004 Denomination of invention: Composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20220128 |
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Application publication date: 20160420 Assignee: Xinjiang Tengyu Optoelectronics Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2022990000482 Denomination of invention: A kind of composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20220815 |
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Application publication date: 20160420 Assignee: Shaanxi Dongcheng Haoyu New Material Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2022110000016 Denomination of invention: A kind of composition for aluminosilicate glass and use thereof Granted publication date: 20181211 License type: Common License Record date: 20220905 |
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Application publication date: 20160420 Assignee: Liaoyuan Shengyuan New Material Technology Co.,Ltd. Assignor: DONGXU OPTOELECTRONIC TECHNOLOGY Co.,Ltd. Contract record no.: X2023110000058 Denomination of invention: A composition for aluminosilicate glass and its use Granted publication date: 20181211 License type: Common License Record date: 20230506 |
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