CN105470656A - Adjustable linear polarization wave beam separator based on gradient super-surface - Google Patents

Adjustable linear polarization wave beam separator based on gradient super-surface Download PDF

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CN105470656A
CN105470656A CN201510882672.4A CN201510882672A CN105470656A CN 105470656 A CN105470656 A CN 105470656A CN 201510882672 A CN201510882672 A CN 201510882672A CN 105470656 A CN105470656 A CN 105470656A
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CN105470656B (en
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许河秀
罗伟杰
蔡通
周磊
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Fudan University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/24—Polarising devices; Polarisation filters 
    • H01Q15/242—Polarisation converters
    • H01Q15/244—Polarisation converters converting a linear polarised wave into a circular polarised wave

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Abstract

The invention belongs to the technical field of super-surfaces, specifically an adjustable linear polarization wave beam separator based on a gradient super-surface. The separator takes TGMS units as the basis, enables six TGMS units to sequentially rotate 30 degrees in the clockwise direction, and obtains a TGMS super-unit with a phase gradient. The TGMS super-unit is enabled to carry out two-dimensional periodic extension in x and y orthogonal directions in a horizontal plane, and a microstrip bias line at the lower layer of the TGMS is used for the feed of the TGMS units in each row, thereby obtaining the separator with a plurality of functions. The TGMS units are in a three-layer metal structure, wherein the upper layer consists of a pair of the same metal pasters and an opening microstrip line, wherein the opening at the center of the opening microstrip line is used for loading a PIN diode, the central layer is a metal ground plate and the center consists of two metal columns and circular grooves wrapping the upper column, and the lower layer is a brush structure. The separator greatly improves the conversion efficiency (greater than 89%), and achieves the switching and regulation and control of wave beam separation frequency bands.

Description

A kind of based on the super surperficial adjustable line polarisation beam splitters of gradient
Technical field
The invention belongs to super field of surface technology, be specifically related to a kind of based on the super surperficial adjustable line polarisation beam splitters of gradient.
Background technology
Anisotropic media (Metamaterial, MTM) refers to that nature itself does not exist, and people adopt sub-wavelength artificial micro-structure unit and " special " artificial composite structure with certain electroresponse or magnetic response designed according to electromagnetic theory or material.Although people can manipulate electromagnetic wave arbitrarily by three-dimensional anisotropic media, the complexity of high loss and making strongly limit its application, and therefore current application is truly also few.As a kind of two dimensional surface form of anisotropic media, super surperficial in response to and give birth to, due to the electromagnetic property of its uniqueness and planar structure and can be conformal and do not destroy its characteristic such as contour structures and aerodynamics with high speed operational objectives such as aircraft, guided missile, rocket and satellites, be subject to favor and the extensive concern of researcher in recent years.Super surperficial by refractive index/phase place whether gradual change can be divided into gradient super surperficial (GradientMetasurface, GMS) and evenly super surperficial (HomogenousMetasurface, HMS).2011, the discovery of Generalized S nell refraction/reflection law opened brand-new approach and field that people control electromagnetic wave and light, and promoting this field and producing a field technology innovation, therefore GMS also becomes the new branch of anisotropic media and study hotspot.Because GMS is as a kind of two-dimensional gradient structure designed based on SPA sudden phase anomalies and polarizing control thought, can to excite and transmission controls flexibly electromagnetic, realize the unusual functions such as unusual refraction/reflection, polarized rotation and asymmetric transmission, there is more powerful electromagnetic wave ability of regulation and control, GMS shows huge potential using value in stealthy surface, conformal antenna, digital coding, offset printing etc., becomes the subject commanding elevation and Frontier grabbed various countries.
GMS based on geometry Bel phase place (GeometryBerryPhase) just can obtain required reflected phase will or transmission phase owing to only need need not be optimized a large amount of structural parameters by the main shaft of rotating unit, designer only need pay close attention to reflectivity or transmissivity modulus value, considerably reduce workload and the complexity of GMS design, reduce the difficulty designing large phase range.But GMS is once operating frequency changes, and expect that same electromagnetic property must redesign structural parameters, efficiency is low, reusability is poor in the past.Simultaneously due to the effect of dispersion of phase place, the bandwidth of operation of GMS is still narrower, needs expansion badly, and do not have dispersion characteristics phase bandwidth very wide although rotate GMS due to its geometry Bel phase place, it is only suitable for cross polarization.Along with super study of surfaces deeply and the development of electromagnetic wave control technique, people achieve real-time monitoring to resonance frequency and surface impedance by introducing regulation and control device in the cells, which, the dynamic regulation of unusual electromagnetic property is made to become possibility, adjustable super sufacing is that the realization of New function device and electromagnetic wave modulation device and checking provide new method, becomes the powerful measure solving above-mentioned bottleneck.But the research on adjustable super surface is only confined to HMS, yet there are no so far about adjustable GMS(TunableGMS, TGMS in the past) open report.Simultaneously due to the introducing of PIN diode, Q value is very high, and GMS can complete phase hit in very narrow frequency range, and is asymptotic behavior outside band, and the bandwidth of phase place dynamic regulation is very narrow.
Summary of the invention
The object of the invention is to design the controlled and adjustable line polarisation beam splitters that conversion efficiency is high of a kind of working frequency range.
6 TGMS unit, based on TGMS unit, are rotated 30 °, obtain the TGMS hyperelement with phase gradient by the adjustable line polarisation beam splitters of the present invention's design in the direction of the clock successively; Again TGMS hyperelement is carried out two-dimension periodic continuation N along on x, y two orthogonal directions in horizontal plane x* N yindividual (wherein N x, N ybe respectively the number of hyperelement on x, y direction) and by micro-band offset line of TGMS lower floor, feed is carried out to the often row TGMS unit on x direction, then obtaining the adjustable line polarisation beam splitters with several functions, is also TGMS.The domain of adjustable line polarisation beam splitters as shown in Figure 6.
In the present invention, TGMS unit is made up of the metallization via hole of three-layer metal structure, two layer medium plate and connection three-layer metal structure, as shown in Figure 1.Wherein, upper strata metal structure is made up of the large metal patch of an equity and opening microstrip line, and the opening in the middle of microstrip line is for loading PIN diode.The object of the present invention's ingenious introducing pair of metal paster near main resonance structure is to introduce new resonance, by adjustment patch size and the smooth transition and cascade that make itself and main resonance cooperatively interact can to realize two resonance frequencys, thus effectively reduce Q value, expand phase place and the frequency modification scope of TGMS flat board.Middle layer metal structure is metal floor and center is made up of the annular groove of double layer of metal cylinder and parcel upper strata cylinder, and cylinder is electrically connected completely with metallization via hole, and annular groove is for isolating cylinder and floor.Due to the effect of metal floor, the invention belongs to reflection system, electromagnetic wave incident does not have transmission to only have reflection to TGMS unit.Lower metal structure is brush structure, is made up of the circular ring structure (SRR) of symmetrical openings and up and down symmetrical and two thin microstrip lines of high impedance loading lumped inductance.The loading of lumped inductance mainly contains two functions, and one is to provide a high reactance value, plays the function of direct current biasing, prevents high-frequency microwave signal from entering DC source and not affecting direct current (DC) bias, thus can improve the stability of circuit; Two is that the electric current stoping upper-layer micro-strip structure to produce flows along guide rail through metallization via hole, thus eliminates the amplitude inconsistency of drawing two separation circular polarization wave beams.During work, produce linear polarization wave beam by upper strata rotational structure and be separated the geometry Bel phase place needed, lower floor SRR structure keeps synchronous rotary and carries out direct current biasing by metallization via hole to upper strata PIN pipe, and the asymmetric effect of understructure will be isolated by intermediate flooring layer simultaneously.
In TGMS unit, p x, p ybe respectively the cycle (i.e. length) of TGMS unit along x, y direction, p x=p ysufficiently the large metal patch that could hold completely under rotational condition, increases p under secondly metal structure fixes situation xand p ycan reduce the wastage, slow down the severe degree of phase place change, but too conference affect the sub-wavelength characteristic of unit, therefore comprehensively chooses 11.5mm≤p x=p y<15mm; d 1for the spacing between paster and opening microstrip line, d 1less reflection is larger, and the consistency of lower two reflection amplitudes of orthogonal polarization excitation is better, but considers the welding of metal influence of arrangement PIN pipe intensive in actual processing and be short-circuited, and therefore chooses 0.3mm≤d 1≤ 0.5mm; d 2for the width of opening microstrip line, d 2bore dia must be greater than, i.e. d 3<d 2, d 3for the size of via diameter, d 3less loss is less, reflection is larger, frequency is lower, but is subject to the restriction of actual processing drill size, therefore chooses 0.3mm≤d 3≤ 0.5mm; w 1for the width of paster, w 2for the width of the thin microstrip line of high impedance in brush structure, general w 2the smaller the better, but for ease of effectively welding and processing, choose 0.15mm≤w 2≤ 0.5mm, R 1, R 2for outer, the inside radius of annulus in brush structure, its size is by h 4+ h 5/ 2> (R 1+ R 2)/2 retrain; h 1and h 2be respectively the thickness of upper and lower layer dielectric-slab, h 1larger reflection coefficient change is more smooth, and bandwidth is wider, but for ensureing the axial sub-wavelength characteristic of certain bandwidth sum, chooses 3mm≤h 1≤ 6mm, h 2the smaller the better and choose h 2≤ 0.5mm; h 3for the height of paster, h 4for the length of opening microstrip line the first half metal, h 4less reflection amplitudes is larger and reflection amplitudes consistency is better, but must ensure that it covers via hole, namely meets h 4+ h 5/ 2> (R 1+ R 2)/2; h 5for the length of opening, for ease of effective welding of PIN pipe, choose 1mm≤h 5≤ 1.5mm; h 6for the size of annular indentation in brush structure, for ensureing that upper and lower two offset lines are in off state, choose h 6>=0.8mm.
In the present invention, the TGMS hyperelement with phase gradient rotates 30 ° successively in the direction of the clock by 6 TGMS unit and obtains, and wherein the micro-band offset line of lower floor, lumped inductance and two layer medium plate are fixed, and all the other are all with common rotation.The anglec of rotation of first unit is φ 1=0 °, the anglec of rotation of second ~ the 6th unit is followed successively by φ 2=30 °, φ 3=60 °, φ 4=90 °, φ 5=120 ° and φ 6=150 °.The TGMS unit above-mentioned 6 with different rotary angle and phase place is arranged in order in the x-direction by the order that the anglec of rotation increases and upper, middle and lower-ranking structure is connected respectively, then synthesis has the TGMS hyperelement of phase gradient.
Because the anglec of rotation between 2 subelements adjacent in TGMS hyperelement of the present invention is 30 ° and comprises 6 unit, the reflected phase will difference that therefore adjacent cells produces be (geometry Bel phase gradient) Δ φ=± 60 ° and the phase place of TGMS hyperelement energy complete covering 360 ° changes.
The adjustable line polarisation beam splitters of the present invention's design, because the offset line of unit each on x direction joins end to end, therefore often arranges 6N xindividual TGMS unit can be undertaken unifying feed by two offset lines.When voltage is greater than 0V(forward bias) time, the conducting of PIN pipe; When voltage is 0V(reverse bias) time, PIN pipe disconnects.
The present invention can combine with rotation GMS by conditioning technology, by introducing PIN diode and dual resonance structure in rotation GMS unit, achieving the dynamic regulation of TGMS cell geometry Bel phase place, greatly having expanded the bandwidth of phase place dynamic regulation; Simultaneously by the well-designed circular polarization component that inhibits to the conversion of carrying non-geometric Bel phase component, improve the conversion efficiency of line polarization wave beam separator, under the disconnection of PIN pipe, conducting two states, the paradoxical reflex conversion efficiency of TGMS flat board reaches more than 89%.The linear polarization wave beam separation function of TGMS the present invention is based under can directly be extended to transmission system under reflection system simultaneously.
Accompanying drawing explanation
Fig. 1 is the topological structure of TGMS unit.Wherein, (a) full view; B () emulation is arranged; (c) media layer damage; (d) end view (e) superstructure; (f) fabric.During work, TGMS unit irradiates by the plane electromagnetic wave of the incident y-axis polarization of edge-z-axis.
Fig. 2 is the equivalent-circuit model of TGMS unit and PIN diode.
Fig. 3 is the change curve of reflection coefficient with patch size of TGMS unit.Wherein, (a) amplitude; (b) phase place.
Fig. 4 is main polarization reflection amplitudes and the reflected phase will curve of PIN switch TGMS unit when disconnecting.
The main polarization reflection amplitudes of TGMS unit and reflected phase will curve when Fig. 5 is PIN switch conduction.
Fig. 6 is the topological structure of TGMS hyperelement and TGMS.
When Fig. 7 is the disconnection of PIN switch, line polarization wave beam separator distributes with the scattered field of angle and frequency at different frequency place.
When Fig. 8 is PIN switch conduction, line polarization wave beam separator distributes with the scattered field of angle and frequency at different frequency place.
To be line polarization wave beam separator disconnect at (a) 6.07GHZ(PIN switch Fig. 9) and (b) 8.6GHz(PIN switch conduction) place distributes with the normalization scattered field of angle.
Embodiment
The present invention is specifically described further below by specific embodiment.
TGMS unit is made up of the metallization via hole of three-layer metal structure, two layer medium plate and connection three-layer metal structure, as shown in Figure 1.
In the present embodiment, up/down layer dielectric-slab all adopts polytetrafluoroethylglass glass cloth plate, DIELECTRIC CONSTANT ε r=2.65, electric tangent loss tan σ=0.001, the thickness of Copper Foil is 0.036mm, wherein, p x=p y=12mm, the spacing d between paster and opening microstrip line 1=0.4mm, the width d of opening microstrip line 2=0.5mm, via diameter d 3=0.3mm, the width w of paster 1=3mm, the width w of the thin microstrip line of high impedance in brush structure 2=0.4mm, outer, the inside radius R of annulus in brush structure 1=3mm, R 2=2.5mm, the thickness h of upper and lower layer dielectric-slab 1=3mm, h 2=0.5mm, the height h of paster 3=9mm, the length h of opening microstrip line the first half metal 4=2.5mm, the length h of opening 5=1.5mm, the size h of annular indentation in brush structure 6=1mm.
Fig. 2 gives the equivalent-circuit model of TGMS unit and PIN diode, wherein R s, L s, C srepresent the dead resistance of PIN pipe respectively, package lead inductance and package capacitance, C jrepresent the junction capacitance of tube core.When being also voltage forward conduction when the switch is closed, C j=0, now the equivalent-circuit model of diode can with very little series resistance R sand inductance L scome equivalent, when also namely voltage reversal is biased when the switches are opened, the equivalent-circuit model of diode can use series connection inductance L sand C 1come equivalent, C here 1namely C is comprised jcomprise C again s.In the present embodiment, PIN diode adopts PIN pipe to adopt MA4PBL027, wherein L s=0.7nH, C j=0.03pF, the R when leakage current is 10mA sbe about 3.5 Ω.When electric field polarizes along y-axis, by the effect in magnetic field, x-axis direction, being coupled between metal floor with upper strata metal structure forms two local magnetic resonances, creates two mode of operations, and wherein, its split shed microstrip line produces magnetic response by first series arm L 1, C 1and R 1come equivalent, and the magnetic response that y direction, both sides symmetric metal paster produces is by two series arm L 2, C 2and R 2parallel equivalent, here inductance L 1comprise the line inductance of microstrip line and the lead-in inductance of PIN pipe, electric capacity C 1by tube core electric capacity C jwith package capacitance C scomposition, L 2represent the line inductance of paster, C 2represent the capacity plate antenna that paster is formed over the ground, and R 1and R 2be used for the loss of sign two resonance structures respectively.The transmission of electromagnetic wave in dielectric-slab is Z by impedance c, length is the transmission line equivalence of h, and metal floor is by ground connection equivalence.When electric field polarizes along x-axis, electric field will drive x direction metal patch to produce magnetic response and by L 3, C 3and R 3equivalence, because the size of paster when both direction polarizes is different, therefore magnetic resonance intensity and frequency are all different.According to transmission line theory, above-mentioned three series loops by generation three magnetic resonance frequencies and respectively by , with represent.
The curve that the reflection coefficient that Fig. 3 gives TGMS unit changes with patch size, can find out when there is no paster, from amplitude and phase response curve, obviously can see the resonance of an acute variation, in resonance frequency 7.46GHz place existence one reflection paddy, amplitude is S 11=0.8, phase place changes violent and presents an asymptotic behavior away from phase place during resonance, and the frequency range of phase place regulation and control is very narrow, and Q value is very high.On the contrary, when introducing paster, the resonant intensity of unit obviously dies down and weakens gradually along with the continuous increase of patch length, the now resonance frequency of paster with the resonance frequency of opening microstrip line closely, when patch length is increased to a certain degree, due to reduction make gradually with be separated, occurred two resonance points, can be adjusted arbitrarily by the size of adjustment paster and opening microstrip line with frequency ratio, thus greatly expand the phase place modification scope of TGMS unit and the bandwidth of operation of broadening TGMS unit.
Theoretical according to spin of photon Hall effect, when major axes orientation u, v of TGMS unit overlap with coordinate x, y of unit two-dimension periodic continuation place plane, the reflection matrix of TGMS unit under circular polarization base three Pauli matrixes can be expressed as with the linear combination of a unit matrix:
（1）
Wherein, for the reflection Jones matrix under linear polarization base.Reflection matrix after rotating φ around z-axis can be expressed as:
（2）
Here spin matrix , for Spin transition operator and when incident wave is dextrorotation or it is (left-handed ) circularly polarised wave time, meet with .Due to the effect on metallic intermediate layer floor, the electromagnetic response conductively-closed that the asymmetry of lower metal structure produces is fallen, and can not produce any impact to the electromagnetic property of superstructure.Due to the Double Symmetry characteristic of superstructure, r xy=r yx≈ 0, simultaneously r xx+ r yy=0, therefore reflection matrix can abbreviation be:
（3）
Known according to formula (3), reflection amplitudes , reach the conversion efficiency of nearly 100%, and reflected phase will (geometry Bel phase place) has the change of-2 φ or 2 φ.Therefore when incident wave is single circularly polarised wave, reflected wave is a same polarization and carries the phase place of-2 φ or 2 φ, and due to geometry Bel phase 180 ° that the is left-handed and generation of right-handed circular polarization ripple, therefore left-handed and right-handed circular polarization incident wave will be reflected on two rightabouts after TGMS reflection.
Fig. 4, Fig. 5 give switch and disconnect and the reflection amplitudes of TGMS unit and phase curve under conducting two kinds of situations, when can find out that switch disconnects, from r yyamplitude curve on can observe two resonance points ≈ 6.07GHz and =8.51GHz, the more weak and resonance paddy depth S of resonant intensity 11all be greater than 0.89, the phase change on reflection aggravation of resonance ratio place TGMS unit, presents strong dispersion relation with frequency simultaneously, and phase place change severe degree is directly proportional to resonant intensity, and from r xxamplitude curve on do not observe any resonance.In whole observation band limits | r xx| ≈ | r yy| and φ diffclose to 180 degree near 6GHz.During switch conduction, due to rapid reduction, from r yyamplitude curve on only can be observed a resonance , and due to coupling between paster and opening microstrip line high frequency offset is there occurs when comparatively switch disconnects.In whole observation band limits | r xx| ≈ | r yy| ≈ 1 and φ diffclose to 180 degree near 8.6GHz.
Carry out dextrorotation corner φ to TGMS unit, wherein the micro-band offset line of lower floor, lumped inductance and two layer medium plate are fixed, and all the other are all with common rotation.The anglec of rotation of first unit is φ 1=0 °, the anglec of rotation of second ~ the 6th unit is followed successively by φ 2=30 °, φ 3=60 °, φ 4=90 °, φ 5=120 ° and φ 6=150 °.The TGMS unit above-mentioned 6 with different rotary angle and phase place is arranged in order in the x-direction by the order that the anglec of rotation increases and upper, middle and lower-ranking structure is connected respectively, then can synthesize the TGMS hyperelement with phase gradient.
Because the anglec of rotation between 2 subelements adjacent in TGMS hyperelement of the present invention is 30 ° and comprises 6 unit, the reflected phase will difference that therefore adjacent cells produces be (geometry Bel phase gradient) Δ φ=± 60 ° and the phase place of TGMS hyperelement energy complete covering 360 ° changes.Along on x, y two orthogonal directions, two-dimension periodic continuation N is carried out to TGMS hyperelement in horizontal plane x* N yindividual (wherein N x, N ybe respectively the number of hyperelement on x, y direction) and by micro-band offset line of TGMS lower floor, feed is carried out to the often row TGMS unit on x direction, then can design the adjustable line polarisation beam splitters with several functions, also be TGMS, the domain of final line polarization wave beam separator as shown in Figure 6.Because the offset line of unit each on x direction joins end to end, therefore often arrange 6N xindividual TGMS unit can be undertaken unifying feed by two offset lines.When voltage is greater than 0V(forward bias) time, the conducting of PIN pipe; When voltage is 0V(reverse bias) time, PIN pipe disconnects.
According to generalized reflection, refractive index law , when electromagnetic wave is with incidence angle θ iwhen being irradiated to TGMS, angle of reflection θ rmeet , here for the phase gradient that unit length TGMS produces, may be calculated , λ is electromagnetic wave wavelength in free space, for refractive index.When electromagnetic wave is impinged perpendicularly on TGMS by free space, angle of reflection can be reduced to , pass through appropriate design operating frequency f can be made 0place , be also with , according to the size of hyperelement critical frequency f can be calculated c.When time, now , the left-handed and right-handed circular polarization ripple of scattering is communication mode, when during continuous increase, in continuous reduction, the deviation direction of line polarization wave bundle can be controlled by appropriate design TGMS.Because any line polarization wave all can be analyzed to the contrary circularly polarised wave of two rotation directions, therefore according to theory above, it is left-handed with right-handed circular polarization ripple to produce identical but deviation direction the is contrary reflection of two amplitudes when line polarization wave incides TGMS on.Therefore can the operating frequency of control line polarisation beam splitters and the deviation direction of wave beam by the operating state of control switch.
As shown in Figure 7, when PIN switch disconnects, separator obviously works near 6.07GHz, and left-handed, the right-handed circular polarization wavelength-division of decomposition are not reflexed on two rightabouts by approximate constant amplitude, and be 89.1% from the relative efficiency that Fig. 9 (a) can calculate the unusual discrete beams of this frequency, deviation angle is , and although mirror image scattering obtains and suppresses to a certain extent, due to φ near 9.5GHz diff=140 ° do not reach required φ diff=180 °, therefore do not suppress totally according to formula (2) other component known.As shown in Figure 8, when PIN switch conduction, separator obviously works near 8.6GHz, and deviation angle is , and the relative efficiency of the unusual discrete beams of this frequency can be calculated up to 93% from Fig. 9 (b), the left-handed and right-handed circular polarization ripple of decomposition equally by etc. amplitude reflex on two rightabouts, and there is wider bandwidth of operation.To sum up, line polarization wave beam separator of the present invention is at switch conduction with under disconnecting two kinds of situations, line polarization wave can be divided into two wave beams and be dispersed on two rightabouts respectively, reach and line polarization wave is decomposed and the object be separated, achieve the dynamic regulation to wave beam mask work frequency and deviation direction simultaneously.

Claims (4)

1. based on the super surperficial adjustable line polarisation beam splitters of gradient, it is characterized in that, based on TGMS unit, 6 TGMS unit are rotated 30 ° in the direction of the clock successively, obtains the TGMS hyperelement with phase gradient; Again TGMS hyperelement is carried out several two-dimension periodic continuation along on x and y two orthogonal directions in horizontal plane, and by micro-band offset line of TGMS lower floor, feed is carried out to the often row TGMS unit on x direction, namely obtain the adjustable line polarisation beam splitters with several functions.
2. according to claim 1ly it is characterized in that based on the super surperficial adjustable line polarisation beam splitters of gradient, described TGMS unit is made up of three-layer metal structure, two layer medium plate and the metallization via hole that connects three-layer metal structure; Wherein, upper strata metal structure is made up of the large metal patch of an equity and opening microstrip line, and the opening in the middle of microstrip line is for loading PIN diode; Middle layer metal structure is metal floor and center is made up of the annular groove of double layer of metal cylinder and parcel upper strata cylinder, and cylinder is electrically connected completely with metallization via hole, and annular groove is for isolating cylinder and floor; Lower metal structure is brush structure, is made up of the circular ring structure (SRR) of symmetrical openings and up and down symmetrical and two thin microstrip lines of high impedance loading lumped inductance; During work, produce linear polarization wave beam by upper strata rotational structure and be separated the geometry Bel phase place needed, lower floor SRR structure keeps synchronous rotary and carries out direct current biasing by metallization via hole to upper strata PIN pipe, and the asymmetric effect of understructure will be isolated by intermediate flooring layer simultaneously.
3. according to claim 2 based on the super surperficial adjustable line polarisation beam splitters of gradient, it is characterized in that, the TGMS hyperelement with phase gradient rotates 30 ° successively in the direction of the clock by 6 TGMS unit and obtains, wherein the micro-band offset line of lower floor, lumped inductance and two layer medium plate are fixed, and all the other are all with common rotation; The anglec of rotation of first unit is φ 1=0 °, the anglec of rotation of second ~ the 6th unit is followed successively by φ 2=30 °, φ 3=60 °, φ 4=90 °, φ 5=120 ° and φ 6=150 °; Above-mentioned 6 TGMS unit with different rotary angle and phase place are arranged in order in the x-direction by the order that the anglec of rotation increases and upper, middle and lower-ranking structure is connected respectively.
4. according to claim 3ly to it is characterized in that based on the super surperficial adjustable line polarisation beam splitters of gradient, for TGMS unit, p x, p ybe respectively the cycle of TGMS unit along x, y direction, choose 11.5mm≤p x=p y<15mm; d 1for the spacing between paster and opening microstrip line, choose 0.3mm≤d 1≤ 0.5mm; The width d of opening microstrip line 2be greater than excessive bore dia d 3, i.e. d 3<d 2, choose 0.3mm≤d 3≤ 0.5mm; w 2for the width of the thin microstrip line of high impedance in brush structure, choose 0.15mm≤w 2≤ 0.5mm, R 1, R 2for outer, the inside radius of annulus in brush structure, its size is by h 4+ h 5/ 2> (R 1+ R 2)/2 retrain, h 4for the length of opening microstrip line the first half metal, h 5for the length of opening; h 1and h 2be respectively the thickness of upper and lower layer dielectric-slab, choose 3mm≤h 1≤ 6mm, chooses h 2≤ 0.5mm; h 6for the size of annular indentation in brush structure, choose h 6>=0.8mm.
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