CN105470656B - A kind of adjustable line polarisation beam splitters surpassing surface based on gradient - Google Patents

A kind of adjustable line polarisation beam splitters surpassing surface based on gradient Download PDF

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CN105470656B
CN105470656B CN201510882672.4A CN201510882672A CN105470656B CN 105470656 B CN105470656 B CN 105470656B CN 201510882672 A CN201510882672 A CN 201510882672A CN 105470656 B CN105470656 B CN 105470656B
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CN105470656A (en
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许河秀
罗伟杰
蔡通
周磊
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Fudan University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/24Polarising devices; Polarisation filters 
    • H01Q15/242Polarisation converters
    • H01Q15/244Polarisation converters converting a linear polarised wave into a circular polarised wave

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Abstract

The invention belongs to super field of surface technology, specially a kind of adjustable line polarisation beam splitters surpassing surface based on gradient.6 TGMS units are rotated 30 °, are obtained the TGMS hyperelements with phase gradient by the present invention successively in the direction of the clock based on TGMS units;TGMS hyperelements are subjected to several two-dimension periodic continuation along two orthogonal directions of x and y in the horizontal plane again, and the often row TGMS units on the directions x are fed to get to the adjustable line polarisation beam splitters with multiple functions by the micro-strip offset line of TGMS lower layers;The TGMS units are three-layer metal structure, and upper layer is made of the big metal patch of an equity and opening microstrip line, and the opening among microstrip line is for loading PIN diodes;Middle level is metal floor and center is made of the annular groove of double layer of metal cylinder and package upper layer cylinder;Lower metal structure is brush structure.The present invention substantially increases the transfer efficiency of line polarization wave beam separator(Reach 89% or more), realize the switching and regulation and control of wave beam mask work frequency range.

Description

Adjustable linear polarization beam splitter based on gradient super surface
Technical Field
The invention belongs to the technical field of super surfaces, and particularly relates to an adjustable linear polarization beam splitter based on a gradient super surface.
Background
Metamaterials (MTMs) are "specific" artificial composite structures or materials with certain electrical or magnetic responses that are designed by sub-wavelength artificial microstructure units and based on electromagnetic theory, which do not exist in nature. Although people can freely control electromagnetic waves through a three-dimensional anisotropic medium, the application of the three-dimensional anisotropic medium is greatly limited by high loss and manufacturing complexity, so that the application of the three-dimensional anisotropic medium is not much in the current true sense. Super-surfaces are a two-dimensional planar form of a metamaterial, and they have recently been attracting attention and receiving much attention from researchers because of their unique electromagnetic properties and planar structures and conformability to high-speed traveling targets such as airplanes, missiles, rockets, and satellites without damaging their external structures and aerodynamic properties. The super-surface can be divided into a Gradient super-surface (GMS) and a uniform super-surface (HMS) according to whether the refractive index/phase is graded or not. In 2011, the discovery of the generalized Snell refraction/reflection law opens up a brand new path and field for people to control electromagnetic waves and light, the field is being promoted to generate a technical innovation, and the GMS also becomes a new branch and research hotspot of the anisotropic medium. As the GMS is a two-dimensional gradient structure designed based on the phase mutation and polarization control ideas, the excitation and transmission of electromagnetic waves can be flexibly controlled, the singular functions of singular refraction/reflection, polarization rotation, asymmetric transmission and the like are realized, the GMS has stronger electromagnetic wave regulation and control capability, the GMS has great potential application value in the aspects of invisible surfaces, conformal antennas, digital coding, lithography and the like, and becomes a subject high point and a subject front edge for the country.
The GMS based on the geometric Bell Phase can obtain the required reflection Phase or transmission Phase only by rotating the main shaft of the unit without optimizing a large number of structural parameters, and a designer only needs to pay attention to the reflectivity or the transmissivity mode value, so that the workload and complexity of GMS design are greatly reduced, and the difficulty of designing a large Phase range is reduced. However, once the operating frequency of the conventional GMS is changed, structural parameters must be redesigned to obtain the same electromagnetic characteristics, so that the efficiency is low and the reusability is poor. Meanwhile, due to the dispersion effect of the phase, the working bandwidth of the GMS is still narrow, and expansion is needed urgently, and although the phase bandwidth of the rotary GMS is very wide because the geometrical Bell phase of the rotary GMS has no dispersion characteristic, the rotary GMS is only suitable for cross polarization. With the deepening of the super-surface research and the development of the electromagnetic wave regulation and control technology, people realize the real-time regulation and control of the resonant frequency and the surface impedance by introducing a regulation and control device into a unit, so that the dynamic regulation and control of the singular electromagnetic characteristics become possible, the adjustable super-surface technology provides a new method for the realization and verification of a new functional device and an electromagnetic wave modulation device, and the adjustable super-surface technology becomes a powerful means for solving the bottleneck. However, previous studies on Tunable hypersurfaces are limited to HMS, and no published report on Tunable GMS (Tunable GMS, TGMS) has been found so far. Meanwhile, due to the introduction of the PIN diode, the Q value is very high, the GMS can complete phase jump in a very narrow frequency range, and asymptotic behavior is realized outside the band, so that the bandwidth of phase dynamic regulation is very narrow.
Disclosure of Invention
The invention aims to design an adjustable linear polarization beam splitter with controllable working frequency band and high conversion efficiency.
The adjustable linear polarization beam splitter designed by the invention takes the TGMS units as the basis, and sequentially rotates 6 TGMS units by 30 degrees clockwise to obtain a TGMS super unit with phase gradient; then, the TGMS super unit is subjected to two-dimensional periodic continuation in the x and y orthogonal directions in the horizontal planeN x*N yTherein (wherein)N xN yThe number of superunits in the x and y directions respectively) and feeds each row of TGMS units in the x direction through a microstrip bias line at the lower layer of the TGMS, an adjustable linear polarization beam splitter with multiple functions, namely, the TGMS, is obtained. The layout of the tunable linearly polarized beam splitter is shown in fig. 6.
In the present invention, the TGMS unit is composed of a three-layer metal structure, a two-layer dielectric plate, and a metalized via connecting the three-layer metal structure, as shown in fig. 1. The upper-layer metal structure is composed of a pair of equal-size metal patches and an opening microstrip line, and an opening in the middle of the microstrip line is used for loading the PIN diode. The invention skillfully introduces a pair of metal patches near the main resonance structure in order to introduce new resonance, and realizes smooth transition and cascade of two resonance frequencies by adjusting the size of the patches and mutually matching the patches and the main resonance, thereby effectively reducing the Q value and expanding the phase and frequency regulation range of the TGMS panel. Middle level metal structure is metal floor and the center comprises two-layer metal cylinder and the cylindrical ring groove in parcel upper strata, and the cylinder is connected with the metallization via hole electricity completely, and the ring groove is used for keeping apart cylinder and floor. Due to the action of the metal floor, the invention belongs to a reflection system, and electromagnetic waves are incident to the TGMS unit and only reflected without transmission. The lower layer metal structure is an electric brush structure and consists of a circular ring Structure (SRR) with symmetrical openings and two high-impedance fine strip lines which are symmetrical up and down and are loaded with lumped inductors. The loading of the lumped inductor mainly has two functions, one is to provide a high reactance value, exert the function of direct current bias and prevent high-frequency microwave signals from entering a direct current source without influencing the direct current bias, thereby improving the stability of the circuit; and secondly, current generated by the upper-layer microstrip structure is prevented from flowing along the guide rail through the metalized through hole, so that the amplitude inconsistency of two separated circularly polarized beams is eliminated. During operation, the upper layer rotating structure generates a geometric Bell phase required by linear polarization beam separation, the lower layer SRR structure keeps synchronous rotation and carries out direct current bias on the upper layer PIN tube through a metalized through hole, and meanwhile, the asymmetric effect of the lower layer structure is isolated by the middle floor layer.
In the unit of the TGMS, the data is transmitted,p xp ythe period (i.e. length) of the TGMS unit in x and y directions respectively,p x=p ymust be large enough to fully accommodate the metal patch in the rotated condition, and secondly enlarged in the fixed condition of the metal structurep xAndp ycan reduce loss and slow down the intensity of phase change, but greatly influences the sub-wavelength characteristic of the unit, so the comprehensive selection is more than or equal to 11.5mmp x=p y<15mm;d 1Is the distance between the patch and the open microstrip line,d 1the smaller the reflection is, the better the consistency of the two reflection amplitudes under the orthogonal polarization excitation is, but considering that the intensive metal layout influences the welding of the PIN tube and generates short circuit in the actual processing, the selection is less than or equal to 0.3mmd 1≤0.5mm;d 2Is the width of the open microstrip line,d 2must be larger than the hole diameter, i.e.d 3<d 2d 3Of diameter of via holeThe size of the capsule is determined by the size of the capsule,d 3the smaller the loss, the larger the reflection and the lower the frequency, but the frequency is limited by the size of the actually processed drill bit, so that the selection is less than or equal to 0.3mmd 3≤0.5mm;w 1Is the width of the patch and is,w 2for the width of high-impedance fine strip lines in brush structures, in generalw 2The smaller the diameter, the better, but 0.15mm < o > is selected for effective welding and processingw 2≤0.5mm,R 1R 2The outer and inner radii of the ring in the brush structure are controlled byh 4+h 5/2>(R 1+R 2) A/2 constraint;h 1andh 2are respectively the thickness of the upper and lower dielectric plates,h 1the larger the change of the reflection coefficient is, the flatter the change of the reflection coefficient is, the wider the bandwidth is, but in order to ensure a certain bandwidth and axial sub-wavelength characteristics, the thickness of the optical fiber is less than or equal to 3mmh 1≤6mm,h 2Smaller is better and selectedh 2≤0.5mm;h 3Is the height of the patch and is,h 4is the length of the metal of the upper half part of the open microstrip line,h 4the smaller the reflection amplitude, the larger the reflection amplitude and the better the reflection amplitude consistency, but the requirement of covering the through hole is ensured, namely the requirement of meetingh 4+h 5/2>(R 1+R 2)/2;h 5The length of the opening is selected to be less than or equal to 1mm in order to facilitate the effective welding of the PIN pipeh 5≤1.5mm;h 6Selecting the size of the circular ring gap in the brush structure to ensure the upper and lower bias lines to be in the open circuit stateh 6≥0.8mm。
In the invention, the TGMS super unit with phase gradient is obtained by sequentially rotating 6 TGMS units by 30 degrees in the clockwise direction, wherein the lower layer microstrip offset line, the lumped inductor and the two layers of dielectric plates are fixed, and the rest rotate together. The angle of rotation of the first unit isφ 1=0 DEG, the rotation angles of the second to sixth units being successivelyφ 2=30°,φ 3=60°,φ 4=90°,φ 5=120 ° andφ 6=150 °. Will be at the topThe 6 TGMS units with different rotation angles and phases are sequentially arranged along the x direction according to the increasing sequence of the rotation angles, and the upper layer structure, the middle layer structure and the lower layer structure are respectively and correspondingly connected, so that the TGMS super unit with the phase gradient is synthesized.
Since the rotation angle between the adjacent 2 sub-units in the TGMS super-unit is 30 ° and includes 6 units, the reflection phase difference generated by the adjacent units is (geometric bell phase gradient) Δ Φ = ± 60 ° and the TGMS super-unit can completely cover the phase change of 360 °.
The adjustable linear polarization beam splitter designed by the invention has 6 rows because the bias lines of each unit in the x direction are connected end to endN xThe TGMS units can be uniformly fed by two bias wires. When the voltage is greater than 0V (forward bias), the PIN tube is conducted; when the voltage is 0V (reverse bias), the PIN tube is disconnected.
The invention combines the adjustable technology with the rotary GMS, realizes the dynamic regulation and control of the geometric Bell phase of the TGMS unit by introducing a PIN diode and a double-resonance structure into the rotary GMS unit, and greatly expands the bandwidth of the dynamic regulation and control of the phase; meanwhile, the conversion of the circularly polarized component to the component carrying the non-geometric Bell phase is inhibited through careful design, the conversion efficiency of the linear polarization beam splitter is improved, and the singular reflection conversion efficiency of the TGMS flat plate reaches more than 89% under the two states of disconnection and connection of the PIN tube. Meanwhile, the linear polarization beam separation function of the invention based on the TGMS in the reflection system can be directly expanded to the transmission system.
Drawings
Fig. 1 shows the topology of a TGMS unit. Wherein (a) a full view; (b) setting simulation; (c) a middle layer structure; (d) side view (e) upper layer structure; (f) and (5) a bottom layer structure. In operation, the TGMS unit is illuminated by a planar electromagnetic wave polarized along the-z axis incident y-axis.
Fig. 2 is an equivalent circuit model of the TGMS unit and the PIN diode.
Figure 3 is a graph of the reflection coefficient of the TGMS unit as a function of patch size. Wherein (a) amplitude; (b) phase.
Fig. 4 is a graph of the main polarization reflection amplitude and reflection phase of the TGMS unit with the PIN switch open.
Fig. 5 is a graph of the main polarization reflection amplitude and reflection phase of the TGMS unit with the PIN switch on.
Fig. 6 shows the TGMS superunit and TGMS topologies.
Fig. 7 is a scattered field distribution of the linear polarization beam splitter at different frequencies as a function of angle and frequency when the PIN switch is open.
Fig. 8 is a scattered field distribution of the linear polarization beam splitter at different frequencies as a function of angle and frequency when the PIN switch is turned on.
Fig. 9 is a normalized scattered field distribution over angle of the linearly polarized beam splitter at (a) 6.07GHZ (PIN switch off) and (b) 8.6GHZ (PIN switch on).
Detailed Description
The present invention will be described in further detail below with reference to specific examples.
The TGMS unit consists of a three-layer metal structure, a two-layer dielectric board, and a metalized via connecting the three-layer metal structure, as shown in fig. 1.
In this embodiment, the upper/lower dielectric plates are made of PTFE glass cloth plate with dielectric constantε r =2.65, an electric tangent loss tan σ =0.001, and a thickness of the copper foil is 0.036mm, wherein,p x=p y=12mm, spacing between patch and open microstrip lined 1Width of open microstrip line =0.4mmd 2=0.5mm, via diameterd 3=0.3mm, width of patchw 1=3mm, high impedance fine microstrip in electric brush structureWidth of the linew 2=0.4mm, outer and inner radius of circular ring in electric brush structureR 1=3mm、R 2=2.5mm, thickness of upper and lower dielectric platesh 1=3mm、h 2=0.5mm, height of patchh 3=9mm, length of metal in upper half of open microstrip lineh 4=2.5mm, length of openingh 5=1.5mm, size of circular ring gap in electric brush structureh 6=1mm。
FIG. 2 shows an equivalent circuit model of a TGMS unit and a PIN diode, whereinR sL sC sRespectively representing the parasitic resistance of the PIN tube, the inductance of the packaging lead wire and the capacitance of the tube shell,C jrepresenting the junction capacitance of the die. When the switch is closed i.e. the voltage is conducting in the forward direction,C j=0, the equivalent circuit model of the diode can now use very small series resistancesR sAnd an inductorL sEquivalently, when the switch is turned off, i.e. when the voltage is reverse biased, the equivalent circuit model of the diode can use a series inductorL sAndC 1to be equivalent thereto, hereC 1Namely compriseC jAnd also comprisesC s. In the embodiment, the PIN diode adopts a PIN tube and adopts MA4PBL027, whereinL s=0.7nH,C j=0.03pF, when the leakage current is 10mAR sAbout 3.5 omega. When the electric field is polarized along the y axis, under the action of the magnetic field in the x axis direction, the metal floor and the upper layer metal structure are coupled to form two local magnetic resonances to generate two working modes, wherein the open microstrip line generates a magnetic response and the first series branch generates a magnetic responseL 1C 1AndR 1equivalent, and the magnetic response generated by the two symmetrical metal patches in the y direction is composed of two series branchesL 2C 2AndR 2parallel equivalent, here inductanceL 1Line inductor containing microstrip line and lead wire inductor and capacitor of PIN (personal identification number) tubeC 1From die capacitanceC jAnd shell capacitorC sThe components of the composition are as follows,L 2indicating labelThe line inductance of the chip is such that,C 2represents the plate capacitance formed by the patch to ground, andR 1andR 2respectively, to characterize the losses of the two resonant structures. The transmission of electromagnetic waves in a dielectric plate is defined by an impedance ofZ cLength ofhThe transmission line of (2) is equivalent, and the metal floor is equivalent to the ground. When the electric field is polarized along the x-axis, the electric field drives the x-direction metal patch to generate magnetic responseL 3C 3AndR 3equivalently, the magnetic resonance intensity and frequency are different because the patch size is different when polarized in both directions. According to the transmission line theory, the three series loops will generate three magnetic resonance frequencies respectivelyAndand (4) showing.
FIG. 3 shows the reflection coefficient of a TGMS unit as a function of patch size, and it can be seen that in the absence of a patch, a strongly varying resonance is evident from the amplitude and phase response curves, with a reflection valley at the resonant frequency of 7.46GHz, with an amplitude S11=0.8, the phase changes sharply and shows an asymptotic behavior when the phase is far away from resonance, the frequency range of phase control is very narrow, and the Q value is very high. In contrast, the resonant frequency of the patch is significantly weaker when the patch is introduced and gradually weakens as the length of the patch increasesResonance frequency with open microstrip lineVery closely, when the patch length increases to a certain extent, due toIs reduced so thatGradually and gradually withThe two resonance points are separated, and the sizes of the patch and the open microstrip line can be adjusted at willAndthe frequency ratio of the TGMS unit is greatly expanded, and the working bandwidth of the TGMS unit is widened.
According to the photon spin Hall effect theory, when the main axis direction of the TGMS unituvCoordinate of plane where unit two-dimensional period continuation is locatedxyReflection matrix of TGMS unit under circular polarization base when overlappingCan be represented as three Pauli matricesAnd a linear combination of identity matrices:
(1)
wherein,is a reflection jones matrix at the basis of linear polarization. Reflection matrix after rotating phi around z-axisCan be expressed as:
(2)
here the rotation matrixIs a spin transfer operator and rotates right when the incident wave is rightOr (levogyration)) When circularly polarized waves, satisfyAnd. Due to the action of the middle-layer metal floor, electromagnetic response generated by asymmetry of the lower-layer metal structure is shielded, and electromagnetic properties of the upper-layer structure cannot be influenced. Due to the two-fold symmetry properties of the superstructure,r xy=r yxabout 0 whiler xx+r yy=0, hence the reflection matrixCan be simplified into:
(3)
according to the formula (3), the reflection amplitudeNearly 100% conversion efficiency is achieved, andthe reflection phase (geometric bell phase) will change by-2 or 2. Therefore, when the incident wave is a single circularly polarized wave, the reflected wave is co-polarized and carries a phase of-2 phi or 2 phi, and the geometric Bell phases generated by the left-handed circularly polarized wave and the right-handed circularly polarized wave are different by 180 degrees, so that the left-handed circularly polarized wave and the right-handed circularly polarized wave are reflected to two opposite directions after being reflected by the TGMS.
Fig. 4 and 5 show the reflection amplitude and phase curves of the TGMS unit for both open and closed switches, and it can be seen that when the switch is open, the switch is turned offr yyCan observe two resonance points on the amplitude curveAbout 6.07GHz and=8.51GHz, weak resonance intensity and resonance valley depth S11Are all larger than 0.89, and the reflection phase change of the TGMS unit at the resonance rate is intensified, and the reflection phase change shows strong dispersion relation along with the frequency, and the intensity of the phase change is in direct proportion to the resonance strength, so thatr xxNo resonance is observed on the amplitude curve of (a). Counting the whole observation frequency ranger xx|≈|r yyI andφ diffapproaching 180 degrees near 6 GHz. When the switch is turned on, becauseRapidly decrease fromr yyOnly one resonance is observable on the amplitude curve ofAnd due to the coupling effect between the patch and the open microstrip lineA higher frequency offset occurs than when the switch is off. Counting the whole observation frequency ranger xx|≈|r yy1 andφ diffapproaching 180 degrees near 8.6 GHz.
And clockwise rotating the TGMS unit by a angle phi, wherein the lower-layer microstrip offset line, the lumped inductor and the two dielectric slabs are fixed, and the rest rotate together. The angle of rotation of the first unit isφ 1=0 DEG, the rotation angles of the second to sixth units being successivelyφ 2=30°,φ 3=60°,φ 4=90°,φ 5=120 ° andφ 6=150 °. The above 6 TGMS units with different rotation angles and phases are sequentially arranged along the x direction according to the increasing order of the rotation angles, and the upper, middle and lower three-layer structures are respectively and correspondingly connected, so that the TGMS superunit with the phase gradient can be synthesized.
Since the rotation angle between the adjacent 2 sub-units in the TGMS super-unit is 30 ° and includes 6 units, the reflection phase difference generated by the adjacent units is (geometric bell phase gradient) Δ Φ = ± 60 ° and the TGMS super-unit can completely cover the phase change of 360 °. Two-dimensional periodic continuation is carried out on the TGMS super unit in the x and y orthogonal directions in the horizontal planeN x*N yTherein (wherein)N xN yThe number of superunits in the x and y directions, respectively) and feeds each row of TGMS units in the x direction through a microstrip bias line at the lower layer of the TGMS, an adjustable linear polarization beam splitter with multiple functions, i.e., the TGMS, can be designed, and the layout of the final linear polarization beam splitter is shown in fig. 6. Since the bias lines of each cell in the x-direction are end-to-end, each row 6N xThe TGMS units can be uniformly fed by two bias wires. When the voltage is greater than 0V (forward bias), the PIN tube is conducted; when the voltage is 0V (reverse bias), the PIN tube is disconnected.
According to the law of generalized reflection and refractive indexWhen the electromagnetic wave is at an incident angle thetaiAngle of reflection theta upon irradiation of TGMSrSatisfy the requirement ofHere, theThe phase gradient generated for a unit length TGMS can be calculated asλ is the wavelength of the electromagnetic wave in free space,is the refractive index. The reflection angle can be simplified to be that when the electromagnetic wave is vertically incident to the TGMS from the free spaceBy reasonable designCan make the working frequencyf 0ToThat is to sayAndaccording to the size of the superunitThe critical frequency can be calculatedf c. When in useAt this time, theBoth the scattered left-hand and right-hand circularly polarized waves are in a propagation modeWhen the size of the material is continuously increased,in the continuous reduction, the deflection direction of the linearly polarized wave beam can be controlled by reasonably designing the TGMS. Since any linearly polarized wave can be decomposed into two circularly polarized waves with opposite handedness, according to the above theory, when the linearly polarized wave is incident on the TGMS, two reflected left-handed and right-handed circularly polarized waves with the same amplitude but opposite deflection directions are generated. The operating frequency of the line polarization beam splitter and the deflection direction of the beam can be controlled by controlling the operating state of the switch.
As shown in fig. 7, when the PIN switch is turned off, the separator apparently operates around 6.07GHz, the decomposed left-hand and right-hand circularly polarized waves are approximately reflected in two opposite directions with equal amplitudes, and from fig. 9 (a), the relative efficiency of the singularly separated wave beam at that frequency can be calculated to be 89.1%, and the deflection angle is 89.1%And in the vicinity of 9.5GHz, although the image scattering is suppressed to some extent, the effect is thatφ diff=140 ° does not reach the desiredφ diff=180 °, it is therefore known from equation (2) that the other components are not pressed clean. As shown in FIG. 8, when the PIN switch is turned on, the splitter operates significantly near 8.6GHz, with a deflection angle ofAnd from fig. 9 (b) it can be calculated that the relative efficiency of the singularly separated beam at this frequency is as high as 93%, the decomposed left-and right-hand circularly polarized waves are also reflected with equal amplitude in two opposite directions and have a wider operating bandwidth. In summary, the linear polarization beam splitter of the present invention can split the linear polarization wave into two beams and scatter the two beams in two opposite directions under two conditions of on and off of the switch, thereby achieving the purpose of splitting and separating the linear polarization wave and simultaneously achieving the working frequency and offset of beam splittingAnd (5) dynamically regulating and controlling the folding direction.

Claims (3)

1. An adjustable linear polarization beam splitter based on a gradient super surface is characterized in that 6 TGMS units are sequentially rotated by 30 degrees in a clockwise direction on the basis of an adjustable gradient super surface TGMS unit to obtain a TGMS super unit with a phase gradient; then, conducting a plurality of two-dimensional period prolongations on the TGMS super-unit in the horizontal plane along two orthogonal directions of x and y, and feeding each row of TGMS units in the x direction through a microstrip bias line on the lower layer of the TGMS to obtain an adjustable linear polarization beam splitter with multiple functions;
the TGMS unit consists of a three-layer metal structure, two layers of dielectric slabs and metalized through holes for connecting the three layers of metal structures; the upper-layer metal structure consists of a pair of equal-size metal patches and an opening microstrip line, and an opening in the middle of the microstrip line is used for loading a PIN diode; the middle-layer metal structure is a metal floor, the center of the middle-layer metal structure consists of two layers of metal cylinders and a circular groove wrapping the upper-layer cylinder, the cylinders are completely and electrically connected with the metallized through holes, and the circular groove is used for isolating the cylinders from the floor; the lower layer metal structure is an electric brush structure and consists of a ring structure SRR with symmetrical openings and two high-impedance fine strip lines which are symmetrical up and down and are loaded with lumped inductors; during operation, the upper layer rotating structure generates a geometric Bell phase required by linear polarization beam separation, the lower layer SRR structure keeps synchronous rotation and carries out direct current bias on the upper layer PIN diode through a metalized via, and meanwhile, the asymmetric effect of the lower layer structure is isolated by the middle floor layer.
2. The tunable linear polarization beam splitter based on the gradient super-surface according to claim 1, wherein the TGMS super unit with the phase gradient is obtained by sequentially rotating 6 TGMS units by 30 ° clockwise, wherein the lower microstrip offset line, the lumped inductor and the two dielectric plates are fixed, and the rest rotate together; the angle of rotation of the first unit isφ 1=0 DEG, the rotation angles of the second to sixth units being successivelyφ 2=30°,φ 3=60°,φ 4=90°,φ 5=120 ° andφ 6=150 °; the above 6 TGMS units with different rotation angles and phases are sequentially arranged along the x direction according to the increasing order of the rotation angles and the upper, middle and lower three-layer structures are respectively and correspondingly connected.
3. The tunable linear polarization beam splitter based on gradient super-surface of claim 2, wherein for TGMS units,p xp ythe period of the TGMS unit along the x direction and the y direction is respectively selected to be less than or equal to 11.5mmp x=p y<15mm;d 1Is a patch and an open microstripThe distance between the lines is selected to be less than or equal to 0.3mmd 1Less than or equal to 0.5 mm; width of open microstrip lined 2Is larger than the diameter of the via holed 3I.e. byd 3<d 2Selecting the grain size of less than or equal to 0.3mmd 3≤0.5mm;w 2Selecting the width of high-impedance fine strip line in the brush structure to be not more than 0.15mmw 2≤0.5mm,R 1R 2The outer and inner radii of the ring in the brush structure are controlled byh 4+h 5/2>(R 1+R 2) The constraint of/2 is that,h 4is the length of the metal of the upper half part of the open microstrip line,h 5is the length of the opening;h 1andh 2the thicknesses of the upper and lower dielectric plates are respectively selected to be less than or equal to 3mmh 1Less than or equal to 6mm, selectingh 2≤0.5mm;h 6Selecting the size of the circular ring gap in the electric brush structureh 6≥0.8mm。
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