CN105470344B - 一种延长石墨舟使用寿命的方法 - Google Patents
一种延长石墨舟使用寿命的方法 Download PDFInfo
- Publication number
- CN105470344B CN105470344B CN201510626772.0A CN201510626772A CN105470344B CN 105470344 B CN105470344 B CN 105470344B CN 201510626772 A CN201510626772 A CN 201510626772A CN 105470344 B CN105470344 B CN 105470344B
- Authority
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- China
- Prior art keywords
- graphite boat
- bubbling
- thickness
- service life
- plated
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 43
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 43
- 239000010439 graphite Substances 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 31
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 31
- 239000010703 silicon Substances 0.000 claims abstract description 31
- 239000011261 inert gas Substances 0.000 claims abstract description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 5
- 238000002425 crystallisation Methods 0.000 claims abstract description 5
- 230000008025 crystallization Effects 0.000 claims abstract description 5
- 230000005587 bubbling Effects 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 13
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 12
- 238000005229 chemical vapour deposition Methods 0.000 claims description 12
- 238000001035 drying Methods 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 10
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005554 pickling Methods 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 238000005406 washing Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 4
- 238000001816 cooling Methods 0.000 abstract 1
- 230000002035 prolonged effect Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 239000002253 acid Substances 0.000 description 5
- 229920006395 saturated elastomer Polymers 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510626772.0A CN105470344B (zh) | 2015-09-28 | 2015-09-28 | 一种延长石墨舟使用寿命的方法 |
Applications Claiming Priority (1)
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CN201510626772.0A CN105470344B (zh) | 2015-09-28 | 2015-09-28 | 一种延长石墨舟使用寿命的方法 |
Publications (2)
Publication Number | Publication Date |
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CN105470344A CN105470344A (zh) | 2016-04-06 |
CN105470344B true CN105470344B (zh) | 2017-04-26 |
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CN201510626772.0A Active CN105470344B (zh) | 2015-09-28 | 2015-09-28 | 一种延长石墨舟使用寿命的方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106024681B (zh) * | 2016-07-27 | 2018-12-28 | 苏州阿特斯阳光电力科技有限公司 | 叠层膜、包含其的石墨舟及其制备方法、及石墨舟清洗方法 |
CN108598211B (zh) * | 2018-01-15 | 2020-05-01 | 洛阳尚德太阳能电力有限公司 | 一种晶硅太阳能电池石墨舟预处理方法 |
CN110400769B (zh) * | 2019-07-18 | 2022-02-18 | 晶澳太阳能有限公司 | 石墨框的饱和方法以及石墨框 |
CN111589769A (zh) * | 2020-05-25 | 2020-08-28 | 常州时创能源股份有限公司 | 硅片pecvd镀非晶硅用石墨舟的清洗方法 |
CN113774362A (zh) * | 2021-09-13 | 2021-12-10 | 浙江爱旭太阳能科技有限公司 | 一种pecvd设备宕机后的复机方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85109647A (zh) * | 1984-12-19 | 1986-08-27 | 普拉斯马英万特股份公司 | 带有保护涂层的碳或石墨体及其生产方法 |
US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
CN103160803A (zh) * | 2011-12-09 | 2013-06-19 | 浚鑫科技股份有限公司 | 石墨舟预处理方法 |
CN103387416A (zh) * | 2013-07-31 | 2013-11-13 | 青岛隆盛晶硅科技有限公司 | 一种提高介质熔炼中石墨坩埚使用寿命的方法 |
CN103824795A (zh) * | 2012-11-19 | 2014-05-28 | 尚德太阳能电力有限公司 | 一种石墨舟预处理替代片及石墨舟预处理方法 |
CN104923518A (zh) * | 2015-04-24 | 2015-09-23 | 中建材浚鑫科技股份有限公司 | 石墨舟清洗工艺 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10151030B2 (en) * | 2014-02-06 | 2018-12-11 | Kgt Graphit Technologie Gmbh | Protective layer for PECVD graphite boats |
-
2015
- 2015-09-28 CN CN201510626772.0A patent/CN105470344B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN85109647A (zh) * | 1984-12-19 | 1986-08-27 | 普拉斯马英万特股份公司 | 带有保护涂层的碳或石墨体及其生产方法 |
US5332601A (en) * | 1992-12-10 | 1994-07-26 | The United States As Represented By The United States Department Of Energy | Method of fabricating silicon carbide coatings on graphite surfaces |
CN103160803A (zh) * | 2011-12-09 | 2013-06-19 | 浚鑫科技股份有限公司 | 石墨舟预处理方法 |
CN103824795A (zh) * | 2012-11-19 | 2014-05-28 | 尚德太阳能电力有限公司 | 一种石墨舟预处理替代片及石墨舟预处理方法 |
CN103387416A (zh) * | 2013-07-31 | 2013-11-13 | 青岛隆盛晶硅科技有限公司 | 一种提高介质熔炼中石墨坩埚使用寿命的方法 |
CN104923518A (zh) * | 2015-04-24 | 2015-09-23 | 中建材浚鑫科技股份有限公司 | 石墨舟清洗工艺 |
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CN105470344A (zh) | 2016-04-06 |
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Address after: 362302 Nanan City, Quanzhou province photoelectric information industry base Sunshine Road, No. 1, No. Applicant after: YANGGUANG ZHONGKE (FUJIAN) ENERGY CO.,LTD. Address before: 362302 Nanan City, Quanzhou province photoelectric information industry base Sunshine Road, No. 1, No. Applicant before: SUNLIGHT EARTH GROUND (FUJIAN) NEW ENERGY Co.,Ltd. |
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Denomination of invention: Method for prolonging service lifetime of graphite boat Effective date of registration: 20191203 Granted publication date: 20170426 Pledgee: Nanan branch of Xingye Bank, Limited by Share Ltd. Pledgor: YANGGUANG ZHONGKE (FUJIAN) ENERGY CO.,LTD. Registration number: Y2019350000076 |
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Date of cancellation: 20230224 Granted publication date: 20170426 Pledgee: Nanan branch of Xingye Bank, Limited by Share Ltd. Pledgor: YANGGUANG ZHONGKE (FUJIAN) ENERGY CO.,LTD. Registration number: Y2019350000076 |