CN105470344B - 一种延长石墨舟使用寿命的方法 - Google Patents

一种延长石墨舟使用寿命的方法 Download PDF

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CN105470344B
CN105470344B CN201510626772.0A CN201510626772A CN105470344B CN 105470344 B CN105470344 B CN 105470344B CN 201510626772 A CN201510626772 A CN 201510626772A CN 105470344 B CN105470344 B CN 105470344B
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许新湖
柯雨馨
戴亮亮
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Sunshine Branch (fujian) Energy Ltd By Share Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02524Group 14 semiconducting materials
    • H01L21/02532Silicon, silicon germanium, germanium
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/0262Reduction or decomposition of gaseous compounds, e.g. CVD
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Abstract

本发明公开了一种延长石墨舟使用寿命的方法,包括如下步骤:1)石墨舟烘干之后,拆成片,2)采用等离子增强化学气相沉积的方法镀三层硅膜;膜总厚度为4‑10微米;3)惰性气体保护下,将温度缓慢升至800‑1000℃,对非晶硅膜进行晶化,得到晶体硅薄膜;4)惰性气体保护下冷却至室温。本发明可以延长石墨舟的使用寿命。

Description

一种延长石墨舟使用寿命的方法
技术领域
本发明涉及光伏领域,具体涉及一种延长石墨舟使用寿命的方法。
背景技术
在太阳能电池制备过程中,需要采用管式PECVD镀减反射膜。减反射膜的成分为氮化硅。由于石墨的空隙结构,对氮化硅气体有一定的吸附性,在式PECVD镀减反射膜通气体的过程中,造成硅片表面膜厚不均匀。目前大多数企业采取了石墨舟清洗和饱和工艺。即:石墨舟每使用约100次后(约0.5-1个月),对其进行清洗;然后饱和处理,饱和处理即在PECVD炉内,对加载或不加载硅片或假片的石墨舟进行镀氮化硅膜,纯镀膜时间长达2-3小时,才能对抗镀膜时石墨舟对硅片膜厚的影响。而实际的太阳能电池片制备过程中的镀膜工艺,气相沉积镀膜的有效时间仅仅5-10min,膜厚为80nm。因此饱和工艺虽然能够改善硅片表面膜层质量,但是气体的浪费非常严重。不仅如此,每使用100次就要进行酸洗,严重影响石墨舟的使用寿命,0.5-1.5年就要更换一次,而且石墨舟的价值较高,进一步增加了成本。
发明内容
本发明的目的在于提供一种延长石墨舟使用寿命的方法,以解决现有技术中存在的上述问题。
本发明提供的技术方案如下:
一种延长石墨舟使用寿命的方法,包括如下步骤:
1)石墨舟烘干之后,拆成片,腐蚀或清洁表面;
2)采用等离子增强化学气相沉积的方法镀第一层硅膜,功率2.4-2.6kw,通SiH4,N2,Ar;膜厚1-2um;
3)采用等离子增强化学气相沉积的方法镀第二层硅膜,功率1.9-2.1Kw,通SiH4,N2,Ar;膜厚1-3um;
4)采用等离子增强化学气相沉积的方法镀第三层硅膜,功率1.4-1.6KW,通SiH4,N2,H2;膜厚2-6um;
5)惰性气体保护下,将温度缓慢升至800-1000℃,对非晶硅膜进行晶化,得到晶体硅薄膜;
6)惰性气体保护下冷却至室温。
在本发明中,步骤1)的石墨舟为新出厂或是使用一段时间之后。
在本发明的较佳实施例中,三层硅膜的总厚度为4-10微米。
在本发明中,在步骤1)中,如果是使用过一段时间的石墨舟,则常规清洗之后再烘干即可。如果是新的石墨舟处理如下:
1)鼓泡酸洗:采用浓硝酸,30-50℃;石墨舟一共浸泡2-3h,每1h设定鼓泡20-30min;
2)鼓泡水洗:2-3h,每h换水一次,清洗时鼓泡不断;
3)抽风烘干:温度130-150℃,抽风,烘干时间8-20h。
由上述描述可知,本发明的硅涂层有三层,其中,第一层硅膜为底层,其采用高功率,可以将硅结合至石墨层;第二层为过渡层,将硅膜结合到第一层上;第三层为厚度大,主要为硅结晶。
采用这种做法得到的石墨舟,表面为一层4-20微米厚的均匀硅涂层,每次使用时,不必再做饱和处理,按照常规100次左右,对表面因长久使用形成的氮化硅做酸清洗即可。且不会再伤害石墨舟的表面,可以延长石墨舟的使用寿命。
具体实施方式
实施例1
新出厂的石墨舟
1、石墨舟烘干之后,拆成片,石墨舟在浓硝酸中一共浸泡3h,温度30-50℃;每1h设定鼓泡20min;鼓泡水洗2h,每小时换水一次,清洗时鼓泡不断;温度140摄氏度,抽风,烘干时间12h;
2、采用等离子增强化学气相沉积的方法镀第一层硅膜,功率2.5kw,通SiH4,N2,Ar;膜厚1um;
3、采用等离子增强化学气相沉积的方法镀第二层硅膜,功率2Kw,通SiH4,N2,Ar。采用等离子增强化学气相沉积的方法镀第三层硅膜,功率1.5KW,通SiH4;膜厚2um;
4、惰性气体保护下,将温度缓慢升至800-1000℃,对非晶硅膜进行晶化,得到晶体硅薄膜,于是石墨表面的硅膜层;膜厚7um;
5、惰性气体保护下冷却至室温。
使用时,按照常规100次左右,对表面因长久使用形成的氮化硅做酸清洗即可,不必再做饱和处理。
实施例2
使用1年的石墨舟
1、配液:HF酸与水的配比:1:5.
4)上舟:将石墨舟上的螺母全部松开,使石墨舟清洗更彻底。然后将石墨舟置于酸槽中。
3、鼓泡酸洗:石墨舟一共浸泡6-8h,每1h设定浸泡20min。
5)鼓泡水洗:6-8h,每2h换水一次,清洗时鼓泡不断。
4、抽风烘干。温度140摄氏度,抽风,烘干时间12h
5、采用等离子增强化学气相沉积的方法镀第一层硅膜,功率2.5kw,通SiH4,N2,Ar;膜厚1um;
6、采用等离子增强化学气相沉积的方法镀第二层硅膜,功率2Kw,通SiH4,N2,Ar;膜厚2um;
7、采用等离子增强化学气相沉积的方法镀第三层硅膜,功率1.5KW,通SiH4;膜厚6um;
8、惰性气体保护下,将温度缓慢升至800-1000℃,对非晶硅膜进行晶化,得到晶体硅薄膜,于是石墨表面的硅膜层;
9、惰性气体保护下冷却至室温。
使用时,按照常规100次左右,对表面因长久使用形成的氮化硅做酸清洗即可,不必再做饱和处理。
上述仅为本发明的一个具体实施例,但本发明的设计构思并不局限于此,凡利用此构思对本发明进行非实质性的改动,均应属于侵犯本发明保护范围的行为。

Claims (4)

1.一种延长石墨舟使用寿命的方法,包括如下步骤:
1)石墨舟烘干之后,拆成片,腐蚀或清洁表面;
2)采用等离子增强化学气相沉积的方法镀第一层硅膜,功率2.4-2.6kW,通SiH4,N2,Ar;膜厚1-2μm;
3)采用等离子增强化学气相沉积的方法镀第二层硅膜,功率1.9-2.1kW,通SiH4,N2,Ar;膜厚1-3μm;
4)采用等离子增强化学气相沉积的方法镀第三层硅膜,功率1.4-1.6kW,通SiH4,N2,H2;膜厚2-6μm;
5)惰性气体保护下,将温度缓慢升至800-1000℃,对非晶硅膜进行晶化,得到晶体硅薄膜;
6)惰性气体保护下冷却至室温。
2.如权利要求1所述的一种延长石墨舟使用寿命的方法,其特征在于:步骤1)的石墨舟为新出厂或是使用一段时间之后。
3.如权利要求1所述的一种延长石墨舟使用寿命的方法,其特征在于:三层硅膜的总厚度为4-10微米。
4.如权利要求1所述的一种延长石墨舟使用寿命的方法,其特征在于:步骤1)中,新的石墨舟处理如下,烘干,拆成片之后,进行如下处理:
1)鼓泡酸洗:采用浓硝酸,30-50℃;石墨舟一共浸泡2-3h,每1h设定鼓泡20-30min;
2)鼓泡水洗:2-3h,每1h换水一次,清洗时鼓泡不断;
3)抽风烘干:温度130-150℃,抽风,烘干时间8-20h。
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CN106024681B (zh) * 2016-07-27 2018-12-28 苏州阿特斯阳光电力科技有限公司 叠层膜、包含其的石墨舟及其制备方法、及石墨舟清洗方法
CN108598211B (zh) * 2018-01-15 2020-05-01 洛阳尚德太阳能电力有限公司 一种晶硅太阳能电池石墨舟预处理方法
CN110400769B (zh) * 2019-07-18 2022-02-18 晶澳太阳能有限公司 石墨框的饱和方法以及石墨框
CN111589769A (zh) * 2020-05-25 2020-08-28 常州时创能源股份有限公司 硅片pecvd镀非晶硅用石墨舟的清洗方法
CN113774362A (zh) * 2021-09-13 2021-12-10 浙江爱旭太阳能科技有限公司 一种pecvd设备宕机后的复机方法

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Pledgor: YANGGUANG ZHONGKE (FUJIAN) ENERGY CO.,LTD.

Registration number: Y2019350000076