CN105470317A - GaAs film cell with flexible substrate and preparation method of cell - Google Patents
GaAs film cell with flexible substrate and preparation method of cell Download PDFInfo
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- CN105470317A CN105470317A CN201410464974.5A CN201410464974A CN105470317A CN 105470317 A CN105470317 A CN 105470317A CN 201410464974 A CN201410464974 A CN 201410464974A CN 105470317 A CN105470317 A CN 105470317A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a GaAs film cell with a flexible substrate. The cell comprises the flexible substrate, and a first electrode, a GaAs film cell body and a second electrode formed on the flexible substrate successively, and the first electrode further comprises an Au metal layer and an ITO metal layer formed on the flexible substrate successively. The invention also discloses a preparation method of the cell. According to the preparation method, an reverse epitaxial growth technology is used, the GaAs film cell body is connected to the flexible substrate in a bonding technology, and an epitaxial layer is prevented from damage and fracture when a film of the epitaxial structure layer is bonded to the flexible substrate.
Description
Technical field
The present invention relates to a kind of photovoltaic device and preparation method thereof, particularly relate to a kind of flexible substrate GaAs hull cell and preparation method thereof, belong to field of semiconductor devices.
Background technology
In recent years, along with the application of solar cell for space use and the development of BIPV, based on flexible substrate GaAs hull cell also because of himself have lightweight, rollable, be easy to carry, the advantage such as high gravimetric specific power replaces traditional battery gradually and becomes the focus that people extensively study.But, the preparation technology of traditional flexible substrate GaAs hull cell comes with some shortcomings part: first, traditional forward outer layer growth technology, after at the bottom of extension structure sheaf peeling liner, epitaxial structure layer is needed to transfer in flexible substrate, in transfer process, easily cause breaking of epitaxial structure layer, thus affect performance and the rate of finished products of battery; Secondly, adopt the surface Root Mean Square roughness of the substrate of traditional AlAs sacrifice layer-HF acid corrosion liquid system acquisition and epitaxial structure layer relatively large, substrate just can be reused after having to pass through the series of process process such as thinning, polishing, cleaning, therefore, the cost of manufacture of battery is considerably increased; In addition, in traditional Au back reflection structure, rta technique to the reflectivity in visible-range that can reduce Au film, thus reduces the utilance of hull cell to photon.
Summary of the invention
In view of this, the present invention provide firstly a kind of flexible substrate GaAs hull cell, comprise flexible substrate and be formed at the first electrode, GaAs hull cell and the second electrode in described flexible substrate successively, described first electrode comprises and is formed at Au metal level in described flexible substrate and ITO metal level successively.
Wherein, described GaAs hull cell comprise connect successively p-GaAs type contact layer, P-GaInP back surface field layer, GaAs base, GaAs emitter region and GaInP Window layer, wherein, described p-GaAs type contact layer is connected with described ITO metal level.
Wherein, the thickness of described ITO metal level is 80-120nm; The thickness of described Au metal level is 200-1000nm.
Wherein, described second electrode comprises ITO electrode and is arranged at the metal finger contact in ITO electrode; Wherein, described ITO electrode is connected with described GaAs hull cell, and the material of described metal finger contact is AuGe/Ni/Au.
Wherein, described ITO electrode and described GaAs hull cell are also provided with a n-GaAs type contact layer, and the thickness of described n-GaAs type contact layer is 5-20nm.
Another aspect of the present invention there is provided the preparation method of flexible substrate GaAs hull cell as above, and the method comprising the steps of:
Make GaAs hull cell;
The contact layer of GaAs hull cell is prepared ITO metal level and an Au metal level successively;
Prepare the 2nd Au metal level on flexible substrates;
Application bonding technology, combines a described Au metal level towards described 2nd Au metal level bonding, makes described GaAs hull cell be connected in described flexible substrate;
Using corrosive liquids carries out selective corrosion to described AlInP sacrifice layer, removes described GaAs substrate;
Using corrosive liquids carries out selective corrosion to described n-GaAs contact layer, removes described n-GaAs contact layer;
GaInP Window layer prepares ITO electrode;
ITO electrode is prepared metal finger contact, obtains described flexible substrate GaAs hull cell.
Wherein, the corrosive liquid carrying out selective corrosion to described AlInP sacrifice layer is HCl solution; The corrosive liquid described n-GaAs contact layer being carried out to selective corrosion is NH
4oH, H
2o
2and H
2the mixed solution of O.
Wherein, the GaAs substrate of using corrosive liquids erosion removal recycles in this preparation method.
Wherein, carrying out selective corrosion to its thickness to described n-GaAs contact layer is 5-20nm.
Wherein, carrying out selective corrosion to its thickness to described n-GaAs contact layer is 10nm.
Compared with prior art, advantage of the present invention is at least:
In the flexible substrate GaAs hull cell that the embodiment of the present invention provides, adopt ITO/Au back electrode, by the optimization to ITO metal level and Au metal layer thickness, can make through hull cell active area and not have absorbed photon to be again reflected back active area by Au back reflection layer, thus improve incident photon utilance, improve the conversion efficiency of battery; N-contact layer is prepared ITO electrode and the combination of metal finger contact, because ITO itself is transparency conductive electrode, therefore, evaporation ITO electrode layer is equivalent to the contact area added between semiconductor and electrode, such electrode is when collecting charge carrier, reduce the lateral transport of charge carrier, thus reduce resistance extending transversely, contribute to the raising of device performance.
In the preparation method of the flexible substrate GaAs hull cell that the embodiment of the present invention provides, adopt and be inverted epitaxial growth technology, and by bonding technology, GaAs hull cell is connected in flexible substrate, again by the substrate desquamation of epitaxial growth film battery, avoid the Damage and fracture causing epitaxial loayer when epitaxial structure layer film and flexible substrate bond; In addition, with traditional AlAs sacrifice layer and HF acid corrosion liquid phase ratio, method provided by the invention adopts AlInP sacrifice layer and HCL etchant solution, relatively low surface Root Mean Square roughness can be obtained, thus ensure that GaAs substrate is directly reused without chemico-mechanical polishing (CMP) technique, reduce the cost of manufacture of battery.
Accompanying drawing explanation
Fig. 1 is the structural representation of the flexible substrate GaAs hull cell that the embodiment of the present invention provides.
Fig. 2 is the structural representation of the GaAs hull cell that the embodiment of the present invention provides.
Fig. 3 a-3h is the graphical representation of exemplary of the preparation method of the flexible substrate GaAs hull cell that the embodiment of the present invention provides.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly clear and definite, below in conjunction with a preferred embodiment and respective drawings, content of the present invention is described in further detail.
Consulting shown in Fig. 1 and Fig. 2 is a preferred embodiment of the present invention, its GaAs hull cell based on flexible substrate utilizing semiconducter process to prepare.
As shown in Figure 1, this flexible substrate GaAs hull cell mainly comprises flexible substrate 1, first electrode 2 (also referred to as back electrode), GaAs hull cell 3 and the second electrode 4.
Wherein, the first electrode 2 is connected in flexible substrate, and particularly, the first electrode 2 comprises Au metal level 21 and ITO metal level 22, Au metal level 21 and ITO metal level 22 and sets gradually according to the direction away from flexible substrate 1.GaAs hull cell 3 is connected on the first electrode 2, particularly, as shown in Figure 2, GaAs hull cell 3 comprise connect successively p-GaAs type contact layer 31, P-GaInP back surface field layer 32, GaAs base 33, GaAs emitter region 34 and GaInP Window layer 35, wherein, p-GaAs type contact layer 31 is connected with the ITO metal level 22 of the first electrode 2.Second electrode 4 is connected on GaAs hull cell 3, and particularly, the second electrode 4 comprises ITO electrode 41 and is arranged at the metal finger contact 42 in ITO electrode 41, its, the connection of ITO electrode 41 and GaAs hull cell 3.In the present embodiment, the material of metal finger contact 42 is AuGe/Ni/Au.
In the present embodiment, the material of flexible substrate 1 is pi.
As shown in Figure 1, the flexible GaAs hull cell that the present embodiment provides also comprises an anti-film 5, and this anti-film 5 is arranged on the second electrode 4.In the present embodiment, anti-film 5 is covered in the ITO electrode 41 of the second electrode 4 and the space be filled between metal finger contact 42, and in some other embodiments, the top of metal finger contact 42 also can further cover by anti-film 5 completely.Wherein, the material of anti-film can be chosen as TiO
2/ SiO
2.
In flexible substrate GaAs hull cell as above, adopt ITO/Au back electrode, by ITO growth conditions with the optimization of metal A u thickness, can make through hull cell active area and not have absorbed photon to be again reflected back active area by Au back reflection layer, thus improve incident photon utilance, improve the conversion efficiency of battery; N-type electrode adopts ITO electrode and metal finger contact to combine, because ITO itself is transparency conductive electrode, therefore, evaporation ITO electrode layer is equivalent to the contact area added between semiconductor and electrode, such electrode is when collecting charge carrier, reduce the lateral transport of charge carrier, thus reduce resistance extending transversely, contribute to the raising of device performance.
Introduce the preparation method of flexible substrate GaAs hull cell as above below, as shown in Fig. 3 a-h, the method comprising the steps of:
One, GaAs hull cell is prepared.Particularly, consult Fig. 3 a, first GaAs substrate 39 is provided, then apply epitaxial growth technology and prepare GaAs resilient coating 38, AlInP sacrifice layer 37, n-GaAs contact layer 36, GaInP Window layer 35, GaAs emitter region 34, GaAs base 33, P-GaInP back surface field layer 32 and p-GaAs type contact layer 31 successively at GaAs substrate, obtain GaAs hull cell 3 at this GaAs substrate 39 thus.Wherein,
Two, the preparation of ITO/Au back electrode.Particularly, consult Fig. 3 b, adopt optical coating technique to evaporate the thick ITO of 100nm (tin indium oxide) metal level 22 on p-GaAs type contact layer 31, and make to form good ohmic contact between p-GaAs type contact layer 31 and ITO metal level 22 by rta technique; Afterwards by electron beam evaporation process at the thick Au metal level 211 of ITO metal level 22 surface evaporation 200nm as back reflection layer.
Three, by GaAs hull cell and flexible substrate bonding.Particularly, consult Fig. 3 c and 3d, first adopt electron beam evaporation process to evaporate the 2nd thick Au metal level 212 of 300nm in flexible substrate 1 (in the present embodiment, the material of flexible substrate 1 is polyimides); Then an Au metal level 211 is carried out metal bonding towards the 2nd Au metal level 212, the GaAs hull cell 3 be prepared in on GaAs substrate 39 is connected in flexible substrate 1.Wherein, one Au metal level 211, the 2nd Au metal level 212 and ITO metal level 22 constitute the first electrode 2 (also referred to as back electrode) jointly, based on more than, in the present embodiment, the thickness of Au metal level 21 is the thickness of 500nm, ITO metal level 22 is 100nm.In some other embodiments, the thickness that can select of ITO metal level 22 is the thickness that 80-120nm, Au metal level 21 can be selected is 200-1000nm.
Four, the stripping of GaAs substrate and transfer.Particularly, consult Fig. 3 e, adopt Hcl solution as corrosive liquid, selective corrosion is carried out to the AlInP sacrifice layer 37 in extension structure sheaf, GaAs substrate 39, GaAs resilient coating 38 and AlInP sacrifice layer 37 are peeled off from GaAs hull cell 3.The GaAs substrate 39 separated can recycle extension in step one and prepare GaAs hull cell 3.In the present embodiment, adopt AlInP sacrifice layer and HCL etchant solution system, relatively low surface Root Mean Square roughness can be obtained, thus ensure that GaAs substrate 39 is directly reused without chemico-mechanical polishing (CMP) technique, reduce the cost of manufacture of battery.
Five, the preparation of ITO electrode and metal finger contact.Particularly, consult Fig. 3 f and 3g, first, utilize NH
4oH, H
2o
2and H
2(in the present embodiment, the volume ratio of three kinds of solution is the mixed solution of O: NH
4oH:H
2o
2: H
2o=1:1:10) selective corrosion is carried out to n-GaAs contact layer 36, remove n-GaAs contact layer 36; Then in n-GaInP Window layer 35, ITO electrode 41 is prepared by optical coating technique, by optimizing annealing conditions, good ohmic contact is formed between n-GaInP contact layer 36 and ITO electrode 41 interface, further, by completing the preparation of N-shaped metal finger contact 42 in conjunction with photoetching and the technique such as electron beam evaporation AuGe/Ni/Au (evaporating three kinds of metal formation layer closed assembly structures successively) and metal-stripping.In some other embodiments, in order to make to realize good ohmic contact between ITO electrode 41 and battery, to reduce the series resistance of battery and ITO electrode 41, when carrying out selective corrosion to n-GaAs contact layer 36, only need, to its thickness of n-GaAs contact layer 36 corrosion thinning, not need to remove completely.Consider that the existence of n-GaAs contact layer 36 can absorb incident photon, therefore the comparatively preferred thickness range of the n-GaAs contact layer 36 retained is 5-20nm, most preferably 10nm, so both can meet and realize realizing good ohmic contact between ITO electrode 41 and battery, also the loss decreasing light as much as possible.
Six, the preparation of anti-film.As illustrated in figure 3h, in the present embodiment, in order to improve the utilance of battery to photon, optical coating technique is utilized to prepare TiO at battery surface
2/ SiO
2anti-film 5, reduces the reflectivity of sample surfaces, thus improves the utilance of photon.In the present embodiment, anti-film 5 is covered in the ITO electrode 41 of the second electrode 4 and the space be filled between metal finger contact 42, and in some other embodiments, the top of metal finger contact 42 also can further cover by anti-film 5 completely.
In traditional only use Au back reflection structure, when carrying out rta technique, spread between Au and GaAs, Au at high temperature easily diffuses to GaAs inside, causes the change of interface performance, thus causes reflectance reduction, affect device performance.And in the back reflection structure of above embodiment, first ito transparent electrode is prepared, evaporated metal Au layer again after annealing process is completed to ito transparent electrode, avoid the impact of annealing on back reflection effect, can make through hull cell active area and not have absorbed photon to be again reflected back active area by Au back reflection layer, thus improve incident photon utilance, improve the conversion efficiency of battery.And, in the preparation method of the flexible substrate GaAs hull cell more than provided, adopt and be inverted epitaxial growth technology, and by bonding technology, GaAs hull cell is connected in flexible substrate, avoid the Damage and fracture causing epitaxial loayer when epitaxial structure layer film and flexible substrate bond; In addition, with traditional AlAs sacrifice layer-HF acid corrosion liquid phase ratio, method provided by the invention adopts AlInP sacrifice layer and HCL etchant solution, relatively low surface Root Mean Square roughness can be obtained, thus ensure that GaAs substrate is directly reused without chemico-mechanical polishing (CMP) technique, reduce the cost of manufacture of battery.
It should be noted that, in this article, the such as relational terms of first and second grades and so on is only used for an entity or operation to separate with another entity or operating space, and not necessarily requires or imply the relation that there is any this reality between these entities or operation or sequentially.And, term " comprises ", " comprising " or its any other variant are intended to contain comprising of nonexcludability, thus make to comprise the process of a series of key element, method, article or equipment and not only comprise those key elements, but also comprise other key elements clearly do not listed, or also comprise by the intrinsic key element of this process, method, article or equipment.When not more restrictions, the key element limited by statement " comprising ... ", and be not precluded within process, method, article or the equipment comprising described key element and also there is other identical element.
It is pointed out that above is only have much a representational embodiment in the present invention's numerous embody rule example, protection scope of the present invention is not constituted any limitation.The technical scheme that all employing equivalents or equivalence are replaced and formed, all drops within rights protection scope of the present invention.
Claims (10)
1. a flexible substrate GaAs hull cell, it is characterized in that, comprise flexible substrate and be formed at the first electrode, GaAs hull cell and the second electrode in described flexible substrate successively, described first electrode comprises and is formed at Au metal level in described flexible substrate and ITO metal level successively.
2. flexible substrate GaAs hull cell according to claim 1, it is characterized in that, described GaAs hull cell comprise connect successively p-GaAs type contact layer, P-GaInP back surface field layer, GaAs base, GaAs emitter region and GaInP Window layer, wherein, described p-GaAs type contact layer is connected with described ITO metal level.
3. flexible substrate GaAs hull cell according to claim 1, is characterized in that, the thickness of described ITO metal level is 80-120nm; The thickness of described Au metal level is 200-1000nm.
4. flexible substrate GaAs hull cell according to claim 1, is characterized in that, described second electrode comprises ITO electrode and is arranged at the metal finger contact in ITO electrode; Wherein, described ITO electrode is connected with described GaAs hull cell, and the material of described metal finger contact is AuGe/Ni/Au.
5. flexible substrate GaAs hull cell according to claim 4, is characterized in that, described ITO electrode and described GaAs hull cell are also provided with a n-GaAs type contact layer, and the thickness of described n-GaAs type contact layer is 5-20nm.
6. the preparation method of the arbitrary described flexible substrate GaAs hull cell of claim 1-5, is characterized in that, comprise step:
Make GaAs hull cell;
The contact layer of GaAs hull cell is prepared ITO metal level and an Au metal level successively;
Prepare the 2nd Au metal level on flexible substrates;
Application bonding technology, combines a described Au metal level towards described 2nd Au metal level bonding, makes described GaAs hull cell be connected in described flexible substrate;
Using corrosive liquids carries out selective corrosion to described AlInP sacrifice layer, removes described GaAs substrate;
Using corrosive liquids carries out selective corrosion to described n-GaAs contact layer, removes described n-GaAs contact layer;
GaInP Window layer prepares ITO electrode;
ITO electrode is prepared metal finger contact, obtains described flexible substrate GaAs hull cell.
7. preparation method according to claim 6, is characterized in that, the corrosive liquid described AlInP sacrifice layer being carried out to selective corrosion is HCl solution; The corrosive liquid described n-GaAs contact layer being carried out to selective corrosion is NH
4oH, H
2o
2and H
2the mixed solution of O.
8. preparation method according to claim 6, is characterized in that, the GaAs substrate of using corrosive liquids erosion removal recycles in this preparation method.
9., according to the arbitrary described preparation method of claim 6-8, it is characterized in that, carrying out selective corrosion to its thickness to described n-GaAs contact layer is 5-20nm.
10. preparation method according to claim 9, is characterized in that, carrying out selective corrosion to its thickness to described n-GaAs contact layer is 10nm.
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| CN108269864A (en) * | 2018-01-25 | 2018-07-10 | 扬州乾照光电有限公司 | A kind of flexible solar battery and preparation method thereof |
| CN111129188A (en) * | 2019-12-27 | 2020-05-08 | 湖北云邦科技有限公司 | Flexible indium gallium nitride multilayer structure solar photovoltaic device and preparation method thereof |
| CN111129177A (en) * | 2019-12-24 | 2020-05-08 | 中国电子科技集团公司第十八研究所 | ITO glass cover plate matched with space battery and preparation method thereof |
| CN111613693A (en) * | 2019-02-22 | 2020-09-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flexible solar cell and manufacturing method thereof |
| CN112018216A (en) * | 2020-10-30 | 2020-12-01 | 南昌凯迅光电有限公司 | Method for transferring solar cell substrate |
| CN112349804A (en) * | 2019-08-07 | 2021-02-09 | 中国科学院苏州纳米技术与纳米仿生研究所 | Manufacturing method of flexible solar cell |
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| CN114566560A (en) * | 2020-11-27 | 2022-05-31 | 江苏宜兴德融科技有限公司 | Gallium arsenide laser photovoltaic cell and preparation method thereof |
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| CN114566560A (en) * | 2020-11-27 | 2022-05-31 | 江苏宜兴德融科技有限公司 | Gallium arsenide laser photovoltaic cell and preparation method thereof |
| CN114566560B (en) * | 2020-11-27 | 2023-09-12 | 江苏宜兴德融科技有限公司 | Gallium arsenide laser photovoltaic cell and preparation method thereof |
| CN112909102A (en) * | 2021-01-18 | 2021-06-04 | 中山德华芯片技术有限公司 | Solar cell and preparation method thereof |
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