CN103077981A - Flexible substrate silicon-based multi-junction laminated thin-film solar battery and manufacturing method thereof - Google Patents
Flexible substrate silicon-based multi-junction laminated thin-film solar battery and manufacturing method thereof Download PDFInfo
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- CN103077981A CN103077981A CN2011103318737A CN201110331873A CN103077981A CN 103077981 A CN103077981 A CN 103077981A CN 2011103318737 A CN2011103318737 A CN 2011103318737A CN 201110331873 A CN201110331873 A CN 201110331873A CN 103077981 A CN103077981 A CN 103077981A
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- Y02E10/00—Energy generation through renewable energy sources
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- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract
The invention relates to a photovoltaic solar cell and discloses a flexible substrate silicon-based multi-junction laminated thin-film solar battery. The flexible substrate silicon-based multi-junction laminated thin-film solar battery comprises a back reflection electrode, microcrystalline silicon (muc-Si:H) or amorphous silicon germanium (a-SiGe:H) bottom battery, an amorphous silicon (a-Si:H) top battery, a transparent conducting film and a metal grid line which are sequentially deposited on a metal foil or polyester film substrate, wherein the bottom battery is electrically connected with the top battery by adopting a composite tunneling junction. The invention also discloses a manufacturing method for the battery. The manufacturing method comprises the following steps of: carrying out sputtering deposition on the back reflection electrode; depositing microcrystalline silicon or amorphous silicon germanium bottom battery; depositing the amorphous silicon top battery; carrying out sputtering deposition on transparent conducting films such as ITO (Indium Tin Oxide), SnO2.F, ZnO:Al, ZnO:Ga and the like; carrying out electro chemical passivation; preparing the metal grid line and the like. The flexible substrate silicon-based multi-junction laminated thin-film solar battery disclosed by the invention has the beneficial effects that the conversion efficiency of the battery and the large-area uniformity are increased, high efficiency and high power specific weight ratio are obtained and the like; and meanwhile, a preparation process is simple and the scale production can be realized.
Description
Technical field
The present invention relates to photovoltaic cell, particularly a kind of flexible substrate is silica-based ties laminated film solar batteries more, the invention still further relates to the manufacture method of this solar cell.
Background technology
In now widely used thin film solar cell, what mainly adopt is the amorphous silicon membrane material, but there are two major issues in amorphous silicon film solar battery: (1) light-induced degradation effect makes stability test not ideal enough; (2) greater band gap, material itself absorbs insufficient to longwave optical in the solar radiation spectrum, limited the further raising of battery efficiency.In order to solve this two problems, people have extensively carried out the research work of amorphous silicon/microcrystalline silicon tandem solar cell and amorphous silicon/amorphous silicon germanium stacked solar cell, cascade solar cell in recent years.Stacked solar cell, cascade solar cell has been expanded the battery spectral response range, has improved light utilization efficiency; Reduced the intrinsic layer thickness of the sub-battery of amorphous silicon, the light-induced degradation rate descends, and namely laminated cell has improved efficient and stability simultaneously.
And compare with hard substrate batteries such as flat crystalline silicon, glass substrate hull cells based on the silicon-based thin film solar cell of flexible metal foil or polyester film substrate, its maximum characteristics are lightweight, collapsible and difficult fragmentations, can be positioned in top, sailing boat, the racing boat of streamlined car, the out-of-flatnesses such as the cabin surface of motor boat.Flexible thin-film battery can also easily must be installed on the roof of the buildings such as house and the wall face in order to take full advantage of abundant solar energy.Because flexible thin-film battery has higher gravimetric specific power, have simultaneously flexible in addition, be highly suitable for the stratospheric airship surface of earth observation, military utilization has a bright future.
For obtaining high performance stacked solar cell, cascade solar cell, except high efficiency sub-battery, the electricity connection loss that how to reduce between each sub-battery is extremely important.Usually between sub-battery, adopt composite tunnel to tie to obtain ohmic contact characteristic and low series resistance, but the detailed structure of composite tunnel knot is reported seldom at present.
In the manufacturing process of bulk silicon base thin film solar battery, because irregular, the pin hole of substrate surface, the particle contamination in the deposition process etc. have caused that the bypass resistance of battery subregion is less than normal, thereby cause the shunting electric leakage of battery, form " defective " and " pin hole " on the macroscopic view on the microcosmic; Simultaneously because the homogeneous film difficult of depositing large-area, so that so that the structure partial generation break-through of silica-base film, have a strong impact on performance and the rate of finished products of battery.Adopt " voltage methods " add a reverse voltage at battery more at present, and the channel wire of will leaking electricity is blown and can be reached therapeutic purposes.But this kind method is easily exceeded the proper limits in righting a wrong, and makes the break-through of part battery, and pn knot performance can not be recovered again.The electrochemical passivation method is the silicon-based thin film solar cell on the flexible substrate to be immersed contain Al
3+Electrolyte, under the additional power source effect, Al in the solution
3+Ion be combined with the oxygen element of battery surface nesa coating (TCO), thereby form insulator " short circuit " zone in the battery is blocked, increase bypass resistance, thereby battery is repaired in treatment.The electrochemical passivation method is applied in the preparation of metal foil substrate battery at present, but yet there are no report in the preparation of polyester film substrate battery.
In the manufacturing process of bulk silicon base thin film solar battery, the common preparation method of electric current collection grid line comprises electron beam evaporation, thermal vacuum evaporation, magnetron sputtering, silk screen printing etc., but because flexible substrate silicon based thin film solar battery easily lost efficacy under high temperature or macroion beam energy, and its electric property of grid line of silk screen printing preparation is not ideal enough, therefore propose method that electron beam evaporation and magnetron sputtering are combined, had no at present report.
Do not find at present explanation or the report of technology similar to the present invention, not yet collect both at home and abroad similarly data yet.
Summary of the invention
In order to solve the problems of the technologies described above, effectively fully utilize the photovoltaic film materials such as amorphous silicon, microcrystal silicon, amorphous silicon germanium, improve cell conversion efficiency and large-area uniformity, obtain the flexible substrate film solar battery of high efficiency and high power/weight ratio, the first scheme of purpose of the present invention is to provide a kind of flexible substrate silica-based many knot laminated film solar batteries.Utilize the present invention, can obtain solar cell with higher conversion efficiency and weight--to-power ratio in metal forming and polyester film substrate.
In order to solve the deficiencies in the prior art, another program of the object of the invention, the manufacture method of the silica-based many knot laminated film solar batteries of a kind of flexible substrate also is provided, utilize this scheme, " defective " and " pin hole " on the macroscopic view on the silica-based many knot laminated film solar battery microcosmic of above-mentioned flexible substrate have been solved, and flexible substrate silicon based thin film solar battery easily lost efficacy under high temperature or macroion beam energy, and the problem such as its electric property of grid line of silk screen printing preparation is not ideal enough.
In order to reach the foregoing invention purpose, the first scheme of the present invention provides the silica-based many knot laminated film solar batteries of a kind of flexible substrate for solving the technical scheme that its technical problem adopts, and this device comprises:
On metal forming or polyester film flexible substrate, deposit successively back reflector, microcrystal silicon (μ c-Si:H) or amorphous silicon germanium (a-SiGe:H) end battery, amorphous silicon (a-Si:H) top battery, transparent conductive film, metal grid lines; Battery of the above-mentioned end is connected with the top battery and is adopted the composite tunnel knot to carry out electricity to connect.
Above-mentioned composite tunnel junction structure using plasma assistant chemical vapor deposition method deposition, this composite tunnel junction structure is μ c-Si (p
+)/μ c-Si (p
++)-μ c-Si (n
++)/μ c-Si (n
+), μ c-Si (p wherein
+) be the p layer of end battery, thickness is 5nm～50nm; μ c-Si (p
++) thickness be 1nm～10nm; μ c-Si (n
++) thickness is 1nm～10nm; μ c-Si (n
+) be the n layer of top battery, thickness is 5nm～50nm.
Another program of the present invention provides the silica-based manufacture methods of tying laminated film solar batteries of a kind of flexible substrate for solving the problems of the technologies described above the technical scheme that adopts more, comprises the steps:
Step 1, on cleaned metal forming or polyester film flexible substrate, sputtering sedimentation Ag film or Al film, thickness are 100nm～1000nm;
Step 2, on Ag film or Al film, sputtering sedimentation ITO, SnO
2: F, ZnO:Al, ZnO:Ga be a kind of transparent conductive film wherein, and thickness is 100nm～1000nm, finishes the preparation of back reflector;
Step 3, using plasma assistant chemical vapor deposition method battery at the bottom of back reflector deposits N, I, three layers of silicon thin films formation microcrystal silicon of P or amorphous silicon germanium, wherein N layer reacting gas is hydrogen, silane, phosphine, thickness is 5nm～50nm; I layer reacting gas is hydrogen, silane, germane, and thickness is 100nm～2500nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is 5nm～50nm;
Step 4, using plasma assistant chemical vapor deposition method battery at the bottom of microcrystal silicon or amorphous silicon germanium deposit N, I, three layers of silicon thin film of P consist of amorphous silicon top battery, and wherein N layer reacting gas is hydrogen, silane, phosphine, and thickness is 5nm～50nm; I layer reacting gas is hydrogen, silane, and thickness is 100～500nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is 5nm～50nm;
Step 5, on the battery of amorphous silicon top, sputtering sedimentation ITO, SnO
2: F, ZnO:Al, ZnO:Ga be a kind of transparent conductive film wherein, and thickness is 50nm～200nm;
Step 6, the solar cell that transparent conductive film is finished in preparation immerse AlCl
3Solution or Al
2(SO
4)
3Solution carries out electrochemical passivation;
Step 7, finish electron-beam evaporation Ag film or Al film on the solar cell transparent conductive film of electrochemical passivation, sputtering sedimentation Ag film or Al film are finished the preparation of metal grid lines again, and the gross thickness of metal grid lines is 1 μ m～5 μ m.
The silica-based many knot laminated film solar batteries of flexible substrate of the present invention and manufacture method thereof owing to taking above-mentioned technical scheme, are connected with the top battery at end battery and have been adopted the composite tunnel knot to carry out the electricity connection, have reduced the connection loss between sub-battery.Adopt electrochemical passivation technique, improved the electricity uniformity of solar cell.Adopt electron beam evaporation to prepare metal grid lines in conjunction with the method for magnetron sputtering, can obtain thicker, more smooth metal grid lines, simultaneously can be to solar cell performance cause thermal side and ion dam age in the grid line preparation process." defective " and " pin hole " on the macroscopic view, the flexible substrate silicon based thin film solar battery that the invention solves on the silica-based many knot laminated film solar battery microcosmic of flexible substrate easily lost efficacy under high temperature or macroion beam energy, and the problem such as its electric property of grid line of silk screen printing preparation is not ideal enough, improve cell conversion efficiency and large-area uniformity, obtained the flexible substrate film solar battery of high efficiency and high power/weight ratio.Preparation technology is simple simultaneously, can accomplish scale production.
Description of drawings
Fig. 1 is the structural representation of the silica-based many knot laminated film solar batteries of flexible substrate of the present invention;
Fig. 2 is electrochemical passivation experimental provision schematic diagram.
Embodiment
Below in conjunction with description of drawings the first scheme of the present invention, the preferred embodiment of the silica-based many knot laminated film solar batteries of a kind of flexible substrate.
Fig. 1 is the structural representation of the silica-based many knot laminated film solar batteries of flexible substrate of the present invention, shown in the embodiment of Fig. 1, this device comprises: deposit successively back reflector 2, microcrystal silicon (μ c-Si:H) or amorphous silicon germanium (a-SiGe:H) end battery 3, amorphous silicon (a-Si:H) top battery 4, transparent conductive film 5, metal grid lines 6 on metal forming or polyester film flexible substrate 1.Battery of the above-mentioned end 3 is connected with the top battery and is adopted composite tunnel knot to carry out electricity to connect.
Above-mentioned composite tunnel junction structure using plasma assistant chemical vapor deposition method (PECVD) deposition, this composite tunnel junction structure is μ c-Si (p
+)/μ c-Si (p
++)-μ c-Si (n
++)/μ c-Si (n
+), μ c-Si (p wherein
+) be the p layer of end battery, thickness is 5nm～50nm; μ c-Si (p
++) thickness be 1nm～10nm; μ c-Si (n
++) thickness is 1nm～10nm; μ c-Si (n
+) be the n layer of top battery, thickness is 5nm～50nm.
Below in conjunction with description of drawings alternative plan of the present invention, the manufacture method of the silica-based many knot laminated film solar batteries of a kind of flexible substrate, the method comprises following step:
Step 1, on cleaned metal forming or polyester film flexible substrate 1, sputtering sedimentation Ag film or Al film, thickness are 100nm～1000nm;
Step 2, on Ag film or Al film, sputtering sedimentation ITO, SnO
2: F, ZnO:Al, ZnO:Ga be a kind of transparent conductive film wherein, and thickness is 100nm～1000nm, thereby finishes the preparation of back reflector 2;
Step 3, using plasma assistant chemical vapor deposition method (PECVD) battery 3 at the bottom of back reflector 2 deposits N, I, three layers of silicon thin films formation microcrystal silicon of P or amorphous silicon germanium, wherein N layer reacting gas is hydrogen, silane, phosphine, and thickness is 5nm～50nm; I layer reacting gas is hydrogen, silane, germane, and thickness is 100nm～2500nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is 5nm～50nm.
Step 4, using plasma assistant chemical vapor deposition method (PECVD) battery 3 at the bottom of microcrystal silicon or amorphous silicon germanium deposit N, I, three layers of silicon thin film of P consist of amorphous silicon top battery 4, wherein N layer reacting gas is hydrogen, silane, phosphine, and thickness is 5nm～50nm; I layer reacting gas is hydrogen, silane, and thickness is 100nm～500nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is 5nm～50nm.
Step 5, on amorphous silicon top battery 4, sputtering sedimentation ITO, SnO
2: F, ZnO:Al, ZnO:Ga be a kind of transparent conductive film 5 wherein, and thickness is 50nm～200nm.
Step 6, the solar cell that transparent conductive film 5 is finished in preparation immerse AlCl
3Solution or Al
2(SO
4)
3Solution carries out electrochemical passivation.Fig. 2 is electrochemical passivation experimental provision schematic diagram, as shown in Figure 2, the flexible substrate back reflector that deposits silica-base film and ITO is immersed AlCl as negative electrode
3Solution or Al
2(SO
4)
3Solution carries out electrochemical passivation.
Step 7, finish electron-beam evaporation Ag film or Al film on the solar cell transparent conductive film 5 of electrochemical passivation, sputtering sedimentation Ag film or Al film are finished the preparation of metal grid lines 6 again, and the gross thickness of metal grid lines is 1 μ m～5 μ m.In this step, adopt first electron-beam evaporation Ag film or Al film, sputtering sedimentation Ag film or Al film can obtain thicker, more smooth metal grid lines again, simultaneously can be to solar cell performance cause thermal side and ion dam age in the grid line preparation process.
AlCl can be equipped with in the above-mentioned steps six, also the solar cell sample of short circuit on the electricity
3Solution or Al
2(SO
4)
3Solution one class contains Al
3+Added the direct current bias voltage in the device of the solution of ion 10 seconds～120 seconds, and carried out electrochemical passivation, to recover its electric property.
Below be one embodiment of the present of invention:
Flexible stainless steel (SS) and thickness are 38 μ m flexible polyimide (Polyimide take thickness as 50 μ m, PI) be substrate 1, adopt first magnetically controlled sputter method to prepare Ag/ZnO back reflector 2, using plasma strengthens chemical gaseous phase depositing process and has prepared the stacked solar cell, cascade solar cell structure that comprises battery 3 and amorphous silicon top battery 4 at the bottom of the microcrystal silicon again, and the chamber base vacuum is better than 5 * 10 during the preparation sample
-5Pa, 100 ℃～300 ℃ of underlayer temperature scopes.The stacked solar cell, cascade solar cell structure is SS (PI)/Ag/ZnO/n-μ c-Si/i-μ c-Si/p
+-μ c-Si/p
++-μ c-Si/n
++-μ c-Si/n
+-μ c-Si/i-α-Si/p-μ c-Si/ITO.Wherein consist of the heavy doping p of composite tunnel knot
++-μ c-Si layer and heavy doping n
++-μ c-Si layer thickness is 1nm～2nm.In depositing operation, intrinsic microcrystalline silicon layer (i-μ c-Si) adopts very high frequency(VHF) (70MHz) power supply, and all the other each layers adopt radio frequency (13.56MHz) power supply.Cell area is 25cm by 5 definition of ITO electrode
2Also need to be at AlCl after having prepared the ITO electrode
3Add 300W tungsten halogen lamp illumination electrochemical passivation 20 seconds in the electrolyte, and the method that adopts electron beam evaporation and magnetron sputtering to combine at the ITO electrode prepares Ag grid line 6, the grid line gross thickness is about 1.0 μ m.
The present embodiment sample is at 25 ℃, AM1.5 solar spectrum (1000W/m
2) under carry out solar cell output characteristic test.Prepared area is 25cm
2Flexible substrate silicon-based double-knot laminated film solar battery, battery efficiency is up to 7.79% (open circuit voltage 1.285V, short-circuit current density 9.30mA/cm at the bottom of the stainless steel lining
2, fill factor, curve factor 0.652 adopts gross area 25cm
2Computational efficiency); The polyimide substrate battery efficiency is up to 7.06% (open circuit voltage 1.277V, short-circuit current density 8.87mA/cm
2, fill factor, curve factor 0.623 adopts gross area 25cm
2Computational efficiency), power-weight ratio reaches approximately 800W/kg.
From the above mentioned, the present invention is owing to being connected with the top battery at end battery 3 and having adopted the composite tunnel knot to carry out electricity to connect, reduced the connection loss between sub-battery.Adopt electrochemical passivation technique, improved the electricity uniformity of solar cell.Adopt electron beam evaporation to prepare metal grid lines 6 in conjunction with the method for magnetron sputtering.Use the present invention, can improve cell conversion efficiency and large-area uniformity, obtain the flexible substrate film solar battery of high efficiency and high power/weight ratio.Preparation technology is simple simultaneously, can accomplish scale production.
Claims (4)
1. the silica-based many knot laminated film solar batteries of flexible substrate is characterized in that, this device comprises:
On metal forming or polyester film flexible substrate, deposit successively back reflector, microcrystal silicon (μ c-Si:H) or amorphous silicon germanium (a-SiGe:H) end battery, amorphous silicon (a-Si:H) top battery, transparent conductive film, metal grid lines; Described microcrystal silicon (μ c-Si:H) or amorphous silicon germanium (a-SiGe:H) end battery are connected a-Si:H with amorphous silicon) adopt the composite tunnel knot to carry out electricity between the battery of top to connect.
2. many knot laminated film solar batteries as claimed in claim 1, it is characterized in that: described composite tunnel junction structure is μ c-Si (p
+)/μ c-Si (p
++)-μ c-Si (n
++)/μ c-Si (n
+), μ c-Si (p wherein
+) be the p layer of end battery, thickness is 5nm～50nm; μ c-Si (p
++) thickness be 1nm～10nm; μ c-Si (n
++) thickness is 1nm～10nm; μ c-Si (n
+) be the n layer of top battery, thickness is 5nm～50nm.
3. the manufacture method of the silica-based many knot laminated film solar batteries of flexible substrate as claimed in claim 1 is characterized in that, the method comprises the steps:
Step 1, on cleaned metal forming or polyester film flexible substrate, sputtering sedimentation Ag film or Al film, thickness are 100nm～1000nm;
Step 2, on Ag film or Al film, sputtering sedimentation ITO, SnO
2: F, ZnO:Al, ZnO:Ga be a kind of transparent conductive film wherein, and thickness is 100nm～1000nm, finishes the preparation of back reflector;
Step 3, using plasma assistant chemical vapor deposition method battery at the bottom of back reflector deposits N, I, three layers of silicon thin films formation microcrystal silicon of P or amorphous silicon germanium, wherein N layer reacting gas is hydrogen, silane, phosphine, thickness is 5nm～50nm; I layer reacting gas is hydrogen, silane, germane, and thickness is 100nm～2500nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is 5nm～50nm;
Step 4, using plasma assistant chemical vapor deposition method battery at the bottom of microcrystal silicon or amorphous silicon germanium deposit N, I, three layers of silicon thin film of P consist of amorphous silicon top battery, and wherein N layer reacting gas is hydrogen, silane, phosphine, and thickness is 5nm～50nm; I layer reacting gas is hydrogen, silane, and thickness is 100～500nm; P layer reacting gas is hydrogen, silane, borine, methane, and thickness is 5nm～50nm;
Step 5, on the battery of amorphous silicon top, sputtering sedimentation ITO, SnO
2: F, ZnO:Al, ZnO:Ga be a kind of transparent conductive film wherein, and thickness is 50nm～200nm;
Step 6, the solar cell that transparent conductive film is finished in preparation immerse AlCl
3Solution or Al
2(SO
4)
3Solution carries out electrochemical passivation;
Step 7, finish electron-beam evaporation Ag film or Al film on the solar cell transparent conductive film of electrochemical passivation, sputtering sedimentation Ag film or Al film are finished the preparation of metal grid lines again, and the gross thickness of metal grid lines is 1 μ m～5 μ m.
4. the manufacture method of many knot laminated film solar batteries as claimed in claim 3 is characterized in that, in the described step 6, also the solar cell sample of short circuit on the electricity can be equipped with AlCl
3Solution or Al
2(SO
4)
3Solution one class contains Al
3+Added the direct current bias voltage in the device of the solution of ion 10 seconds～120 seconds, and carried out electrochemical passivation and recover its electric property.
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Cited By (5)
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| CN103413855A (en) * | 2013-09-04 | 2013-11-27 | 奇瑞汽车股份有限公司 | Flexible solar battery and preparation method thereof |
| CN103681935A (en) * | 2013-09-17 | 2014-03-26 | 电子科技大学 | An amorphous silicon laminated solar battery |
| WO2014180282A1 (en) * | 2013-05-07 | 2014-11-13 | 上海硕拉投资管理合伙企业（有限合伙） | Solar vehicle sunroof and manufacturing method therefor |
| CN105470317A (en) * | 2014-09-12 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaAs film cell with flexible substrate and preparation method of cell |
| CN111554762A (en) * | 2020-05-05 | 2020-08-18 | 河南工业职业技术学院 | Amorphous silicon/microcrystalline silicon laminated solar cell and manufacturing method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014180282A1 (en) * | 2013-05-07 | 2014-11-13 | 上海硕拉投资管理合伙企业（有限合伙） | Solar vehicle sunroof and manufacturing method therefor |
| CN103413855A (en) * | 2013-09-04 | 2013-11-27 | 奇瑞汽车股份有限公司 | Flexible solar battery and preparation method thereof |
| CN103413855B (en) * | 2013-09-04 | 2016-01-13 | 奇瑞汽车股份有限公司 | A kind of flexible solar battery and preparation method thereof |
| CN103681935A (en) * | 2013-09-17 | 2014-03-26 | 电子科技大学 | An amorphous silicon laminated solar battery |
| CN105470317A (en) * | 2014-09-12 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | GaAs film cell with flexible substrate and preparation method of cell |
| CN105470317B (en) * | 2014-09-12 | 2018-02-13 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of flexible substrate GaAs hull cells and preparation method thereof |
| CN111554762A (en) * | 2020-05-05 | 2020-08-18 | 河南工业职业技术学院 | Amorphous silicon/microcrystalline silicon laminated solar cell and manufacturing method thereof |
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|---|---|
| CN103077981B (en) | 2015-12-09 |
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