CN105428451A - Inverted multi-junction solar cell with omnidirectional reflector and preparation method for inverted multi-junction solar cell - Google Patents
Inverted multi-junction solar cell with omnidirectional reflector and preparation method for inverted multi-junction solar cell Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0687—Multiple junction or tandem solar cells
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- Y02E10/544—Solar cells from Group III-V materials
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Abstract
The invention discloses an inverted multi-junction solar cell with an omnidirectional reflector and a preparation method for the inverted multi-junction solar cell. The inverted multi-junction solar cell comprises a silicon substrate, an ODR omnidirectional reflector, a solar cell epitaxial layer, a grid line and a back electrode, wherein the ODR omnidirectional reflector is positioned on the silicon substrate, and consists of a low refractive index dielectric layer and a high refractive index metal layer. The ODR omnidirectional reflector can enable long wave photons penetrating through the cell base body to fully reflect to increase the absorption of the cell on the long wave light so as to improve the optical utilization rate, and improve the conversion efficiency of the solar cell.
Description
Technical field
The invention belongs to solar battery structure technical field, refer to a kind of upside-down mounting multijunction solar cell with omnibearing reflector and preparation method thereof especially.
Background technology
Solar energy power generating is a kind of clean generation mode, and it is for people to use that sunlight is converted to electric energy by it, traditional more use silicon and germanium battery; Because gallium arsenide cells forbidden band is wider, spectral response and Spectral matching ability good, photoelectric conversion efficiency is high thus be widely applied.
Solar cell has been widely used in the fields such as military affairs, space flight, industry, agricultural, household electrical appliance.But solar cell photoelectric conversion efficiency is greatly about about 20% at present, how to reduce and projects solar cell glazing loss of energy, the conversion efficiency improving battery is key subjects anxious to be resolved.Research shows, affect a lot of because have of photoelectric conversion efficiency of the solar battery, the design of such as battery epitaxial wafer, battery internal resistance, the design of grid line and the material of antireflective film, growth etc., all can cause a large amount of energy losses.Energy loss mainly longer-wave photons fails effectively to be absorbed.Efficient reflector is set at solar cell back, the longer-wave photons through cell matrix can be made fully to reflect, increase battery to the absorption of longwave optical, thus improve the utilance of light, improve the conversion efficiency of solar cell.
Summary of the invention
Technical problem to be solved by this invention is, a kind of upside-down mounting multijunction solar cell with omnibearing reflector and preparation method thereof is provided, solving cannot by hypersorption by the light of solar cell, the problem that longer-wave photons energy loss is more, at solar cell back, efficient omnibearing reflector is set, the longer-wave photons through solar cell district can be made fully to reflect, increase battery area to the absorption of longwave optical, thus improve light solar cell photoelectric conversion rate.
In order to solve the problems of the technologies described above, the technical solution used in the present invention is: a kind of upside-down mounting multijunction solar cell with omnibearing reflector, comprising: gallium arsenide substrate; Solar cell; Omnibearing reflector; Metal bonding layer; Si conductive substrates; Gallium arsenide substrate corrodes latter made metal grid lines and metal back electrode, and the omnibearing reflector be positioned on solar cell epitaxial loayer comprises dielectric layer and metallic reflector, and the thickness of dielectric layer, at 50-500nm, adopts SiOx, SiNx or TiO that refractive index is low
2in one or more combination, the thickness 100-500nm of metallic reflector, adopts high Ag, Al or the Au of reflectivity.
The thickness 200nm of described dielectric layer, the thickness 100nm of metallic reflector.
Described dielectric layer is a pantostrat, and metallic reflector is metal discrete bodies, and it is embedded in dielectric layer and runs through dielectric layer.
Described dielectric layer is provided with conductive hole, and conductive hole is periodic distribution, and conductive hole diameter is 5-15um, spacing 10-50um, and conductive hole is cylindrical or cuboid, and metallic reflector embeds conductive hole, increases the ratio that reflector is reflective.
Described metallic reflector is a pantostrat, and dielectric layer is discrete bodies, and it is embedded in metallic reflector and runs through metallic reflector.
Between dielectric layer and metallic reflector, add layer of metal oxide layer, burning layer material is tin indium oxide or indium zinc oxide, thickness 50 dust-100 dust.
Dielectric layer refractive index is greater than the refractive index of metal oxide layer, and metal oxide layer reflectivity is less than the reflectivity of metallic reflector simultaneously.
First medium layer, second dielectric layer that the dielectric layer in the outside of battery epitaxial loayer adopts refractive index different successively, battery epitaxial loayer, first medium layer, second dielectric layer three refractive index taper off trend.
The preparation method of the described upside-down mounting multijunction solar cell with omnibearing reflector, comprises the following steps:
(1) a GaAs growth substrates is provided, for solar cell epitaxial growth;
(2) on described substrate, metal organic chemical vapor deposition technology growth upside-down mounting multijunction solar cell epitaxial loayer;
(3) somatomedin on solar cell epitaxial loayer, opens some periodically conductive holes by the method for photoetching, wet etching on dielectric layer, and on dielectric layer growing metal reflector;
(4) battery epitaxial wafer and the Si substrate growing metal bonded layer of metallic reflector has been grown, and high temperature bonding;
(5) to above-mentioned bonding pad, gallium arsenide substrate is corroded, and converts Si conductive substrates to;
(6), after removing gallium arsenide substrate, carry out grid line making at solar cell epitaxial loayer, carry out back electrode growth in Si conductive substrates;
(7) on grid line surface, growth antireflective film increases the incidence of light.
The invention has the beneficial effects as follows: by device architecture preparation process, the dielectric layer of growth low-refraction and the metal level of high reflectance are as reflector, through the light of extension battery area by reflector reflects to battery area, increase battery to the absorption of longwave optical, thus improve the conversion efficiency of solar cell.
Accompanying drawing explanation
Fig. 1 is upside-down mounting three-junction solar battery epitaxial layer structure;
Fig. 2 is the structural representation of a kind of upside-down mounting multijunction solar cell with omnibearing reflector in the embodiment of the present invention 1;
Fig. 3 is the structural representation of a kind of upside-down mounting multijunction solar cell with omnibearing reflector in the embodiment of the present invention 2;
Fig. 4 is the structural representation of a kind of upside-down mounting multijunction solar cell with omnibearing reflector in the embodiment of the present invention 3.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
As shown in Figure 2, a kind of upside-down mounting multijunction solar cell with omnibearing reflector of the present invention, comprising: gallium arsenide substrate 140; Solar cell 130; Omnibearing reflector; Metal bonding layer; Si conductive substrates 100; Gallium arsenide substrate corrodes latter made metal grid lines 151 and metal back electrode 152, and the omnibearing reflector be positioned on solar cell 130 epitaxial loayer comprises dielectric layer 122 and metallic reflector 121.Battery area 130 comprises the sub-battery of one or more series connection.The thickness of dielectric layer 122, at 50-500nm, adopts SiOx, SiNx or TiO that refractive index is low
2in one or more combination, the thickness 100-500nm of metallic reflector 121, adopts high Ag, Al or the Au of reflectivity.
122 thickness 200nm of described dielectric layer, the thickness 100nm of metallic reflector 121.
Described dielectric layer 122 is a pantostrat, and metallic reflector 121 is metal discrete bodies, and it is embedded in dielectric layer and runs through dielectric layer.
Described dielectric layer 122 is provided with conductive hole, conductive hole is periodic distribution, and conductive hole diameter is 5-15um, spacing 10-50um, and conductive hole is cylindrical or cuboid, and metallic reflector embeds conductive hole, increases the ratio that reflector is reflective.
Described metallic reflector is a pantostrat, and dielectric layer is discrete bodies, and it is embedded in metallic reflector and runs through metallic reflector.
Between dielectric layer 122 and metallic reflector 121-1, add layer of metal oxide layer 121-2, burning layer material is tin indium oxide ITO or indium zinc oxide, thickness 50 dust-100 dust.
Dielectric layer refractive index is greater than the refractive index of metal oxide layer, and metal oxide layer reflectivity is less than the reflectivity of metallic reflector simultaneously.
First medium layer, second dielectric layer that the dielectric layer in the outside of battery epitaxial loayer adopts refractive index different successively, battery epitaxial loayer, first medium layer, second dielectric layer three refractive index taper off trend.
Get different medium layer below, metal level tests, experimental data is as table 1;
Table 1:
| Dielectric layer | Metal level | Benefit improves | |
| Base | / | / | 0 |
| No1 | SiO2 | Au | 3.92％ |
| No2 | SiO2 | Ag | 3.98％ |
| No3 | SiNx | Au | 3.53％ |
| No4 | SiNx | Ag | 3.99％ |
| No5 | TiO2+SiO2 | Ag | 5.81％ |
As can be seen from Table 1, when dielectric layer is TiO2 and SiO2 lamination, when metal is Ag, the conversion efficiency of battery can be increased substantially.
The preparation method of the above-mentioned upside-down mounting multijunction solar cell with omnibearing reflector, comprises the following steps:
(1) a GaAs growth substrates is provided, for solar cell epitaxial growth;
(2) on described substrate, metal organic chemical vapor deposition technology growth upside-down mounting multijunction solar cell epitaxial loayer;
(3) somatomedin on solar cell epitaxial loayer, opens some periodically conductive holes by the method for photoetching, wet etching on dielectric layer, and on dielectric layer growing metal reflector;
(4) battery epitaxial wafer and the Si substrate growing metal bonded layer of metallic reflector has been grown, and high temperature bonding;
(5) to above-mentioned bonding pad, gallium arsenide substrate is corroded, and converts Si conductive substrates to;
(6), after removing gallium arsenide substrate, carry out grid line making at solar cell epitaxial loayer, carry out back electrode growth in Si conductive substrates.
(7) on grid line surface, growth antireflective film increases the incidence of light.
Its structure of omnibearing reflector is the dielectric layer of low-refraction and the metal level of high reflectance, and dielectric layer can be used for the light of reflects long wave, thus promotes the conversion efficiency of solar cell; Metal level is used for the light of reflectance-transmittance dielectric layer, thus improves the absorption of light.
In this solar battery structure, through the light part of battery area via dielectric layer SiO
xthe total reflection part light that goes back goes back via the total reflection of high reflecting metal layer, increases the absorption rate of light, improves the conversion efficiency of solar cell.The refractive index of its dielectric layer and the reflectivity of metal level are one of middle key factors affecting battery efficiency.
Embodiment 1
The present invention comprises three modules: upside-down mounting multijunction solar cell outer layer growth, and omnibearing reflector makes, bonding, substrate etching, metal grid lines and back electrode.
[upside-down mounting multijunction solar cell outer layer growth]
Upside-down mounting multijunction solar cell epitaxial loayer 130, comprises resilient coating 131, corrosion barrier layer 132, and the first knot GaInP battery 133, first tunnel junctions 134, second ties GaAs battery 135, second tunnel junctions 136, graded bedding 137, and the 3rd knot InGaAs battery 138, as Fig. 1.Growth upside-down mounting multijunction solar cell, adopts MOCVD and metal organic chemical vapor deposition technology grown buffer layer 131 successively on GaAs substrate 140; GaInP corrosion barrier layer 132, corrosion barrier layer 132 is when removing substrate, prevents the floor corroding solar cell district, and remove GaAs substrate and can select ammoniacal liquor hydrogen peroxide mixed solution or phosphoric acid hydrogen peroxide mixed solution, corrosion barrier layer is (Al) GaInP; First knot GaInP battery 133, has the first band gap (about 1.9eV), is preferably AIGaInP; First tunnel junctions 134; Second knot GaAs battery 135, has the second band gap (about 1.5eV), preferred Ga (In) As; Second tunnel junctions 136; Graded bedding 137, graded bedding is In
x(Al
yga
1-y)
1-xas, wherein 0.03≤x≤0.3,0.5≤y≤0.7, the 3rd knot InGaAs battery 138, have the 3rd band gap (about 1.0eV), wherein the back surface field of InGaAs battery is p+AlGaAs face.
[making of omnibearing reflector]
On solar cell epitaxial loayer, 130 growth one deck low refractive index dielectric layers 122, adopt the mode of gold-tinted perforate to form homogeneous conductive hole, afterwards evaporation high-reflectivity metal on dielectric layer at dielectric layer surface.
Concrete low refractive index dielectric layer can select SiNxSiOx etc.; Thickness of dielectric layers is better at 50-500nm, 200nm;
Concrete conductive hole makes at the even resist coating of dielectric layer, can use the photoetching board to explosure with non-periodic pore, and postdevelopment bake reinforces photoresist; In the mode of wet etching, dielectric layer is corroded, rare HF solution can be selected; Finally select acetone or the liquid that removes photoresist to remove photoresist, conductive hole is successfully made; Conductive hole can select difformity, as cylindrical, and cuboid etc.; Conductive hole diameter at 5-15um, the spacing 10-50um between conductive hole; According to manufacturing process ability matched combined, optimum condition can be chosen.Present case conductive hole diameter 10um, spacing 35um.
Evaporation metal on the dielectric layer 122 making conductive hole, metal needs uses and easily forms ohmic contact, and the metal that reflectivity is higher, can select AgAuAl etc., thickness range 100-500nm, 100nm is better;
[making of metal bonding layer, GaAs substrate etching, metal grid lines/back electrode, antireflective coating]
The metal level of metal bonding layer 110 for upside-down mounting multijunction solar cell epitaxial loayer 130 is connected together with electrically-conductive backing plate Si; The Au system eutectic metal that general use chemically stable, combination are firmly, fusing point is lower.As AuSnAuIn etc.For preventing metal to be diffused in semiconductor, can barrier layer being set, two or more laminated construction such as Ti, Pt, Pd can be used.
GaAs substrate 140 corrodes, and available ammoniacal liquor hydrogen peroxide mixed liquor or phosphoric acid, hydrogen peroxide mixed liquor are removed.
Metal grid lines 151, on the solar cell layer surface of removing GaAs substrate, photoetching technique region outside grid line figure is used to form photoresistance, use vapour deposition method evaporation metal material, easy ohmic contact can be selected, conduct electricity, low-cost metal material, as Au, AuGe and semiconductor easily form ohmic contact, then evaporation 5um metal A g fills.
The electrically-conductive backing plate Si100 back side, evaporation metal material makes back electrode; Can the easy ohmic contact of evaporation TiPdAgAu, Ti and Si substrate, Pd can be diffused in Si by barrier metal.
At grid line 151 side evaporation antireflective coating, TiO can be selected
2al
2o
3mgF
2deng in material one one or more layers film.Here TiO is selected
2/ Al
2o
3double-layer reflection-decreasing membrane structure.
Embodiment 2
Present case is improving and supplementing embodiment 1.Embodiment 1 dielectric layer 122 uses the SiNxSiOx of low-refraction, another kind of dielectric layer 122-2 can be added in the middle of solar cell epitaxial loayer 130 and dielectric layer 122-1, its refractive index is respectively n1, n2, n3, require that three's refractive index is progressive formation, n1 > n2 > n3, three can better form comprehensive reflection.Dielectric layer 122-2 can select TiO
2.Concrete, at epitaxial surface evaporation one deck titanium oxide, evaporation dielectric layer SiO above titanium oxide
x, make conductive hole and run through two layer medium layer, last evaporated metal layer, finally complete the making of metal bonding, substrate etching, grid line, back electrode successively, can reference example 1 technological process.
Embodiment 3
Present case is improving and supplementing embodiment 1.In embodiment 1, metallic reflector 121 is Ag, Au, Al, layer of metal oxide layer 121-2 can be added between dielectric layer 122 and metallic reflector 121-1, require that adhesiveness is good, light transmission is good, material selection tin indium oxide (ITO), indium zinc oxide etc., thickness 50 dust-100 dust is good.In omnibearing reflector, layers of material is chosen, and requires that dielectric layer 122 refractive index is greater than the refractive index of metal oxide layer 121-2; Metal oxide layer 121-2 reflectivity is less than the reflectivity of metallic reflector 121-2 simultaneously.All the other technological processes are with embodiment 1.
Above-described embodiment is only for illustration of technological thought of the present invention and feature, its object is to enable those skilled in the art understand content of the present invention and implement according to this, only can not limit the scope of the claims of the present invention with the present embodiment, namely the equal change done of all disclosed spirit or modification, still drop in the scope of the claims of the present invention.
Claims (9)
1. with a upside-down mounting multijunction solar cell for omnibearing reflector, comprising: gallium arsenide substrate (140); Solar cell (130); Omnibearing reflector; Metal bonding layer; Si conductive substrates (100); Gallium arsenide substrate corrodes latter made metal grid lines (151) and metal back electrode (152), it is characterized in that, the omnibearing reflector be positioned on solar cell (130) epitaxial loayer comprises dielectric layer (122) and metallic reflector (121), the thickness of dielectric layer (122), at 50-500nm, adopts SiOx, SiNx or TiO that refractive index is low
2in one or more combination, the thickness 100-500nm of metallic reflector (121), adopts high Ag, Al or the Au of reflectivity.
2. the upside-down mounting multijunction solar cell with omnibearing reflector according to claim 1, is characterized in that, the thickness 200nm of described dielectric layer (122), the thickness 100nm of metallic reflector (121).
3. the upside-down mounting multijunction solar cell of band omnibearing reflector according to claim 1, it is characterized in that, described dielectric layer (122) is a pantostrat, and metallic reflector (121) is metal discrete bodies, and it is embedded in dielectric layer and runs through dielectric layer.
4. the upside-down mounting multijunction solar cell with omnibearing reflector according to claim 3, it is characterized in that, described dielectric layer (122) is provided with conductive hole, conductive hole is periodic distribution, conductive hole diameter is 5-15um, spacing 10-50um, and conductive hole is cylindrical or cuboid, metallic reflector embeds conductive hole, increases the ratio that reflector is reflective.
5. the upside-down mounting multijunction solar cell with omnibearing reflector according to claim 1, is characterized in that, described metallic reflector is a pantostrat, and dielectric layer is discrete bodies, and it is embedded in metallic reflector and runs through metallic reflector.
6. the upside-down mounting multijunction solar cell with omnibearing reflector according to claim 1, it is characterized in that, layer of metal oxide layer (121-2) is added between dielectric layer (122) and metallic reflector (121-1), burning layer material is tin indium oxide or indium zinc oxide, thickness 50 dust-100 dust.
7. the upside-down mounting multijunction solar cell with omnibearing reflector according to claim 6, it is characterized in that, dielectric layer refractive index is greater than the refractive index of metal oxide layer, and metal oxide layer reflectivity is less than the reflectivity of metallic reflector simultaneously.
8. the upside-down mounting multijunction solar cell with omnibearing reflector according to claim 1, it is characterized in that, first medium layer, second dielectric layer that the dielectric layer in the outside of battery epitaxial loayer adopts refractive index different successively, battery epitaxial loayer, first medium layer, second dielectric layer three refractive index taper off trend.
9., as claimed in claim 1 with the preparation method of the upside-down mounting multijunction solar cell of omnibearing reflector, it is characterized in that, comprise the following steps:
(1) a GaAs growth substrates is provided, for solar cell epitaxial growth;
(2) on described substrate, metal organic chemical vapor deposition technology growth upside-down mounting multijunction solar cell epitaxial loayer;
(3) somatomedin on solar cell epitaxial loayer, opens some periodically conductive holes by the method for photoetching, wet etching on dielectric layer, and on dielectric layer growing metal reflector;
(4) battery epitaxial wafer and the Si substrate growing metal bonded layer of metallic reflector has been grown, and high temperature bonding;
(5) to above-mentioned bonding pad, gallium arsenide substrate is corroded, and converts Si conductive substrates to;
(6), after removing gallium arsenide substrate, carry out grid line making at solar cell epitaxial loayer, carry out back electrode growth in Si conductive substrates;
(7) on grid line surface, growth antireflective film increases the incidence of light.
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