CN105453248B - 用于热处理腔室的支撑圆柱 - Google Patents

用于热处理腔室的支撑圆柱 Download PDF

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Publication number
CN105453248B
CN105453248B CN201480043642.8A CN201480043642A CN105453248B CN 105453248 B CN105453248 B CN 105453248B CN 201480043642 A CN201480043642 A CN 201480043642A CN 105453248 B CN105453248 B CN 105453248B
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CN
China
Prior art keywords
peripheral surface
support cylinder
inner peripheral
transparent layer
optically transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201480043642.8A
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English (en)
Chinese (zh)
Other versions
CN105453248A (zh
Inventor
梅兰·贝德亚特
阿伦·缪尔·亨特
约瑟夫·M·拉内什
诺曼·L·塔姆
杰弗里·托宾
继平·李
马丁·德兰
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Applied Materials Inc
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Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to CN201710952706.1A priority Critical patent/CN107731718B/zh
Priority to CN201710619830.6A priority patent/CN107342253B/zh
Publication of CN105453248A publication Critical patent/CN105453248A/zh
Application granted granted Critical
Publication of CN105453248B publication Critical patent/CN105453248B/zh
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
CN201480043642.8A 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱 Active CN105453248B (zh)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201710952706.1A CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710619830.6A CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201361866379P 2013-08-15 2013-08-15
US61/866,379 2013-08-15
US14/298,389 US9385004B2 (en) 2013-08-15 2014-06-06 Support cylinder for thermal processing chamber
US14/298,389 2014-06-06
PCT/US2014/042025 WO2015023352A1 (en) 2013-08-15 2014-06-12 Support cylinder for thermal processing chamber

Related Child Applications (2)

Application Number Title Priority Date Filing Date
CN201710952706.1A Division CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710619830.6A Division CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Publications (2)

Publication Number Publication Date
CN105453248A CN105453248A (zh) 2016-03-30
CN105453248B true CN105453248B (zh) 2019-12-10

Family

ID=52467142

Family Applications (3)

Application Number Title Priority Date Filing Date
CN201480043642.8A Active CN105453248B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN201710619830.6A Active CN107342253B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱
CN201710952706.1A Active CN107731718B (zh) 2013-08-15 2014-06-12 用于热处理腔室的支撑圆柱

Country Status (6)

Country Link
US (3) US9385004B2 (https=)
JP (2) JP6453882B2 (https=)
KR (2) KR101713078B1 (https=)
CN (3) CN105453248B (https=)
TW (3) TWI688040B (https=)
WO (1) WO2015023352A1 (https=)

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CN105210173A (zh) * 2013-05-23 2015-12-30 应用材料公司 用于半导体处理腔室的经涂布的衬里组件
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber
US9330955B2 (en) * 2013-12-31 2016-05-03 Applied Materials, Inc. Support ring with masked edge
KR102709229B1 (ko) * 2015-12-07 2024-09-23 어플라이드 머티어리얼스, 인코포레이티드 병합형 커버 링
TWI838824B (zh) * 2017-03-06 2024-04-11 美商應用材料股份有限公司 旋轉器蓋
US11004704B2 (en) 2017-03-17 2021-05-11 Applied Materials, Inc. Finned rotor cover
CN110071064A (zh) * 2018-01-22 2019-07-30 上海新昇半导体科技有限公司 一种改善外延片污染印记的方法
CN111819679A (zh) * 2018-03-13 2020-10-23 应用材料公司 具有等离子体喷涂涂层的支撑环
CN109148353A (zh) * 2018-08-15 2019-01-04 深圳市华星光电技术有限公司 一种基板承托盘
JP7178823B2 (ja) * 2018-08-17 2022-11-28 東京応化工業株式会社 基板加熱装置および基板処理システム
DE102019104433A1 (de) * 2019-02-21 2020-08-27 Aixtron Se CVD-Reaktor mit Mitteln zur lokalen Beeinflussung der Suszeptortemperatur
JP7461214B2 (ja) * 2020-05-19 2024-04-03 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置
KR102787323B1 (ko) 2020-09-24 2025-03-27 삼성전자주식회사 플라즈마 처리 장치 및 플라즈마 처리 방법
US20240141487A1 (en) * 2022-10-27 2024-05-02 Applied Materials, Inc. Epi overlapping disk and ring
US20240247404A1 (en) * 2023-01-25 2024-07-25 Applied Materials, Inc. Pre-heat rings and processing chambers including black quartz, and related methods
US20240312807A1 (en) * 2023-03-17 2024-09-19 Applied Materials, Inc. Radiation separation system

Citations (4)

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US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
US20080092821A1 (en) * 2004-08-24 2008-04-24 Shin-Etsu Handotai Co., Ltd. Quartz Jig and Semiconductor Manufacturing Apparatus
EP2048121A1 (en) * 2007-10-11 2009-04-15 Heraeus Quarzglas GmbH & Co. KG A black synthetic quartz glass with a transparent layer

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US5960555A (en) 1996-07-24 1999-10-05 Applied Materials, Inc. Method and apparatus for purging the back side of a substrate during chemical vapor processing
US6395363B1 (en) * 1996-11-05 2002-05-28 Applied Materials, Inc. Sloped substrate support
US6133152A (en) 1997-05-16 2000-10-17 Applied Materials, Inc. Co-rotating edge ring extension for use in a semiconductor processing chamber
US6048403A (en) * 1998-04-01 2000-04-11 Applied Materials, Inc. Multi-ledge substrate support for a thermal processing chamber
JP2000256037A (ja) * 1999-03-05 2000-09-19 Tosoh Corp 透明部を有する黒色石英ガラス及びその製造方法
JP4969732B2 (ja) * 2001-03-14 2012-07-04 東京エレクトロン株式会社 加熱装置、熱処理装置及びランプ冷却方法
KR100913116B1 (ko) 2002-04-04 2009-08-19 토소가부시키가이샤 석영유리 용사부품 및 그 제조방법
US7704327B2 (en) * 2002-09-30 2010-04-27 Applied Materials, Inc. High temperature anneal with improved substrate support
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KR101403349B1 (ko) 2006-12-05 2014-06-05 신에쯔 세끼에이 가부시키가이샤 합성 불투명 석영유리 및 그 제조방법
US7378618B1 (en) * 2006-12-14 2008-05-27 Applied Materials, Inc. Rapid conductive cooling using a secondary process plane
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JP5441243B2 (ja) * 2009-02-24 2014-03-12 信越石英株式会社 赤外線透過性部材の熱処理用石英ガラス治具
JP5545090B2 (ja) * 2010-07-13 2014-07-09 株式会社Ｓｕｍｃｏ ウェーハ支持治具及び軸状部材並びにシリコンウェーハの熱処理方法
JP5583082B2 (ja) * 2011-06-21 2014-09-03 信越石英株式会社 透明層付き黒色合成石英ガラスの製造方法
US9385004B2 (en) * 2013-08-15 2016-07-05 Applied Materials, Inc. Support cylinder for thermal processing chamber

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US6200388B1 (en) * 1998-02-11 2001-03-13 Applied Materials, Inc. Substrate support for a thermal processing chamber
CN1574208A (zh) * 2003-06-16 2005-02-02 应用材料公司 用于热处理室的圆筒
US20080092821A1 (en) * 2004-08-24 2008-04-24 Shin-Etsu Handotai Co., Ltd. Quartz Jig and Semiconductor Manufacturing Apparatus
EP2048121A1 (en) * 2007-10-11 2009-04-15 Heraeus Quarzglas GmbH & Co. KG A black synthetic quartz glass with a transparent layer

Also Published As

Publication number Publication date
KR20170026647A (ko) 2017-03-08
CN107342253B (zh) 2021-12-28
US20150050819A1 (en) 2015-02-19
US20170263493A1 (en) 2017-09-14
TW201816932A (zh) 2018-05-01
JP2016534558A (ja) 2016-11-04
TWI604559B (zh) 2017-11-01
CN107731718A (zh) 2018-02-23
JP6688865B2 (ja) 2020-04-28
TWI688040B (zh) 2020-03-11
US10128144B2 (en) 2018-11-13
KR101713078B1 (ko) 2017-03-09
KR101966566B1 (ko) 2019-04-05
TWI656598B (zh) 2019-04-11
TW201507056A (zh) 2015-02-16
US20160300752A1 (en) 2016-10-13
CN107731718B (zh) 2022-05-17
JP2019071439A (ja) 2019-05-09
US9659809B2 (en) 2017-05-23
CN107342253A (zh) 2017-11-10
US9385004B2 (en) 2016-07-05
JP6453882B2 (ja) 2019-01-16
CN105453248A (zh) 2016-03-30
WO2015023352A1 (en) 2015-02-19
TW201931516A (zh) 2019-08-01
KR20160044002A (ko) 2016-04-22

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