CN105448791A - 一种卫星用vmos管芯片锡锅搪锡的持具工装及方法 - Google Patents
一种卫星用vmos管芯片锡锅搪锡的持具工装及方法 Download PDFInfo
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Abstract
本发明公开了一种卫星用VMOS管芯片锡锅搪锡的持具工装及方法,包括芯片翻边托盘、定位片及定位片卡槽、持具把手,定位片通过定位片卡槽安装至托盘上,待搪锡的芯片焊盘向下置于定位片上,焊盘完全对准定位片的开口槽。本发明通过设计一种持具,实现了卫星用VMOS管芯片锡锅搪锡的工艺,该方法相比手工烙铁搪锡的方式温度控制更为精准,管脚搪锡处更为平整,且使用该工艺搪锡后芯片设备贴装正确性可大幅提高。
Description
技术领域
本发明涉及芯片镀金引脚搪锡工艺技术,尤其是具备高可靠特征,具体涉及一种卫星用VMOS管芯片搪锡持具工装及其操作方法。
背景技术
目前许多型号卫星从研制初期,就将整星减重作为产品研制的重要任务。从设计源头减轻重量将成为整星减重的有效手段之一,VMOS器件以开关频率高以及导通电阻小的特性,使得航天电子产品中采用VMOS管来代替继电器成为一种趋势。根据航天产品的研制要求,为避免“金脆”现象的发生,对于镀金引脚的芯片或器件,要求必须进行管脚搪锡。而目前对于VMOS管芯片业内基本采用了手工搪锡的方式进行,而手工搪锡中又以电烙铁手工搪锡方式为典型。然而,由于卫星用VMOS管焊盘面积大,散热速度较快,采用电烙铁方式搪锡时,烙铁设置温度必须高于300℃才可完成操作,而VMOS管使用手册则规定,器件焊接温度不宜高于300℃,这其中带来搪锡温度过高带来的芯片热冲击的隐患。
锡锅由于其热容量大,可实现精确温度控制,逐渐成为常规器件搪锡时的首选设备。而对VMOS管芯片锡锅搪锡,常规作业方法芯片无法可靠固定,容易在搪锡过程中掉落,形成极大操作风险。
发明内容
为了解决VMOS管芯片有效、可靠、高质量的搪锡,本发明提供了一种卫星用VMOS管芯片搪锡的持具工装及方法。
本发明的目的是通过以下技术方案来实现的:
一种卫星用VMOS管芯片搪锡的持具工装,包括芯片翻边托盘、定位片及定位片卡槽、持具把手,定位片通过定位片卡槽安装至托盘上,待搪锡的芯片焊盘向下置于定位片上,焊盘完全对准定位片的开口槽。
优选地,定位片为可更换的定位片,针对不同封装尺寸的VMOS管进行搪锡。
优选地,持具边缘进行折边处理,确保搪锡过程中,焊锡不会污染非焊盘处的器件本体。
优选地,持具采用窗口式设计,可方便拾取芯片。
优选地,还包括定位片底部设置的刮刀,可有效控制VMOS管芯片底部搪锡后的锡层平整度与光洁度。
优选地,使用蘸酒精的无纺布浸润3D-PLUS芯片底部硅橡胶,静置数分钟。
一种卫星用VMOS管芯片搪锡方法,通过上述的持具工装完成,包括步骤如下:
1)准备
打开搪锡锅,将锡锅温度设置为预定温度;
2)定位片安装
根据待搪锡芯片尺寸,选择合适的定位片,通过定位片卡槽,安装至持具托盘;
3)芯片放置
使用防静电镊子,夹取待搪锡芯片,将芯片焊盘向下置于持具窗口,焊盘需完全对准定位片开口槽;
4)浸助焊剂
手握持具把手,将芯片浸于助焊剂溶液中,待焊盘完全浸润后即抬起;
5)搪锡
一手握住持具把手,另一手持防静电镊子轻压芯片顶部,将芯片轻轻浸入锡锅,将焊盘完全浸入锡锅液面,数秒后提起,芯片焊盘离开液面前,将握持把手的手食指抵住刮刀握杆,将刮刀沿开口槽滑动一个来回,使焊盘锡量均匀;
6)清洗
将搪完锡的芯片自然冷却至室温,并用蘸无水乙醇的的无尘布擦拭焊盘。
所述步骤1)中,锡锅温度设置为250℃±1℃。
与现有技术相比,本发明具有如下的有益效果:
(1)彻底解决了VMOS管芯片手工搪锡的单点局部加热带来的温度过热冲击以及焊盘受热不均匀的操作风险;
(2)解决了VMOS管芯片焊盘以较低温度均匀快速受热,搪锡温度控制最低可达250℃±1℃,保证了芯片的使用可靠性;
(2)提高了VMOS管芯片SMT贴片安装的成功率,搪锡后焊盘平整度、光亮度优于手工搪锡,SMT自动贴装机机器视觉识别度高于手工搪锡芯片。
附图说明
通过阅读参照以下附图对非限制性实施例所作的详细描述,本发明的其它特征、目的和优点将会变得更明显:
图1为卫星用VMOS管搪锡持具工装结构示意图;
图2为卫星用VMOS管搪锡工艺流程图。
具体实施方式
下面结合具体实施例对本发明进行详细说明。以下实施例将有助于本领域的技术人员进一步理解本发明,但不以任何形式限制本发明。应当指出的是,对本领域的普通技术人员来说,在不脱离本发明构思的前提下,还可以做出若干变形和改进。这些都属于本发明的保护范围。
本发明所公开的卫星用VMOS管芯片锡锅搪锡持具工装,是通过设计一种持具,实现卫星用VMOS管芯片锡锅搪锡的工艺。图1所示,本发明持具工装包括芯片翻边托盘1、定位片2及定位片卡槽3、持具把手4。定位片2通过定位片卡槽3安装至托盘1上,待搪锡的芯片焊盘向下置于定位片2上,焊盘完全对准定位片的开口槽.
持具具备可更换的定位片,可针对不同封装尺寸的VMOS管进行搪锡。
持具边缘进行了折边处理,确保搪锡过程中,焊锡不会污染非焊盘处的器件本体。
持具采用窗口式设计,可方便芯片从持具窗口5拾取。
定位片2底部设置刮刀,握持把手的手食指抵住刮刀握杆6,将刮刀沿开口槽滑动一个来回,使焊盘锡量均匀,从而可有效控制VMOS管芯片底部搪锡后的锡层平整度与光洁度。
搪锡工艺中增加了静电防护措施,使得静电敏感的VMOS管芯片在搪锡作业的过程中产品性能得到保证。
图2所示,利用本发明持具工装进行VMOS管芯片锡锅搪锡的工艺流程,包括如下:
1)准备
将短路保护插头安装到位,打开离子风机,人员着防静电服,佩戴防静电手环,打开搪锡锅,将锡锅温度设置为250℃;
2)定位片安装
根据待搪锡芯片尺寸,选择合适的定位片,通过定位片卡槽,安装至持具托盘;
3)芯片放置
使用防静电镊子,夹取待搪锡芯片,将芯片焊盘向下置于持具窗口,焊盘需完全对准定位片开口槽;
4)浸助焊剂
手握持具把手,将芯片浸于按质量比7∶3配置的酒精松香助焊剂溶液中,待焊盘完全浸润后即可抬起;
5)搪锡
一手握住持具把手,另一手持防静电镊子轻压芯片顶部,将芯片轻轻浸入锡锅,将焊盘完全浸入锡锅液面,2~3s后提起,芯片焊盘离开液面前,将握持把手的手食指抵住刮刀握杆,将刮刀沿开口槽滑动一个来回,使焊盘锡量均匀;
6)清洗
将搪完锡的芯片自然冷却至室温,并用蘸无水乙醇的的无尘布擦拭焊盘。
以上对本发明的具体实施例进行了描述。需要理解的是,本发明并不局限于上述特定实施方式,本领域技术人员可以在权利要求的范围内做出各种变形或修改,这并不影响本发明的实质内容。
Claims (7)
1.一种卫星用VMOS管芯片锡锅搪锡的持具工装,其特征在于,包括芯片翻边托盘、定位片及定位片卡槽、持具把手,定位片通过定位片卡槽安装至托盘上,待搪锡的芯片焊盘向下置于定位片上,焊盘完全对准定位片的开口槽。
2.根据权利要求1所述的卫星用VMOS管芯片锡锅搪锡的持具工装,其特征在于,所述定位片为可更换的定位片,适应于不同封装尺寸的VMOS管进行搪锡。
3.根据权利要求1所述的卫星用VMOS管芯片锡锅搪锡的持具工装,其特征在于,所述持具边缘进行折边处理,确保搪锡过程中,焊锡不会污染非焊盘处的器件本体。
4.根据权利要求1所述的卫星用VMOS管芯片锡锅搪锡的持具工装,其特征在于,所述持具采用窗口式设计,方便拾取芯片。
5.根据权利要求1所述的卫星用VMOS管芯片锡锅搪锡的持具工装,其特征在于,所述定位片底部设置刮刀,用于控制VMOS管芯片底部搪锡后的锡层平整度与光洁度。
6.一种卫星用VMOS管芯片锡锅搪锡方法,其特征在于,通过权利要求1至5任一所述的持具工装完成,包括步骤如下:
1)准备
打开搪锡锅,将锡锅温度设置为预定温度;
2)定位片安装
根据待搪锡芯片尺寸,选择合适的定位片,通过定位片卡槽,安装至持具托盘;
3)芯片放置
使用防静电镊子,夹取待搪锡芯片,将芯片焊盘向下置于持具窗口,焊盘需完全对准定位片开口槽;
4)浸助焊剂
手握持具把手,将芯片浸于助焊剂溶液中,待焊盘完全浸润后即抬起;
5)搪锡
一手握住持具把手,另一手持防静电镊子轻压芯片顶部,将芯片轻轻浸入锡锅,将焊盘完全浸入锡锅液面,数秒后提起,芯片焊盘离开液面前,将握持把手的手食指抵住刮刀握杆,将刮刀沿开口槽滑动一个来回,使焊盘锡量均匀;
6)清洗
将搪完锡的芯片自然冷却至室温,并用蘸无水乙醇的的无尘布擦拭焊盘。
7.根据权利要求6所述的卫星用VMOS管芯片锡锅搪锡方法,其特征在于,所述步骤1)中,锡锅温度设置为250℃±1℃。
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