CN105428325A - Preparation process of single-layer ultrathin substrate packaging structure with metal shielding layer and product thereof - Google Patents
Preparation process of single-layer ultrathin substrate packaging structure with metal shielding layer and product thereof Download PDFInfo
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- CN105428325A CN105428325A CN201510967437.7A CN201510967437A CN105428325A CN 105428325 A CN105428325 A CN 105428325A CN 201510967437 A CN201510967437 A CN 201510967437A CN 105428325 A CN105428325 A CN 105428325A
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- 239000010410 layer Substances 0.000 title claims abstract description 146
- 239000000758 substrate Substances 0.000 title claims abstract description 115
- 239000002184 metal Substances 0.000 title claims abstract description 68
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 68
- 239000002356 single layer Substances 0.000 title claims abstract description 51
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 47
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 229910052802 copper Inorganic materials 0.000 claims abstract description 66
- 239000010949 copper Substances 0.000 claims abstract description 66
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 65
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000007747 plating Methods 0.000 claims abstract description 14
- 238000005520 cutting process Methods 0.000 claims abstract description 10
- 238000009713 electroplating Methods 0.000 claims abstract description 9
- 239000011265 semifinished product Substances 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 25
- 239000011159 matrix material Substances 0.000 claims description 21
- 229910000679 solder Inorganic materials 0.000 claims description 19
- 239000010931 gold Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 11
- 229910052737 gold Inorganic materials 0.000 claims description 11
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 8
- 238000003825 pressing Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 4
- 238000003486 chemical etching Methods 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims description 3
- 239000003973 paint Substances 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- ALKZAGKDWUSJED-UHFFFAOYSA-N dinuclear copper ion Chemical compound [Cu].[Cu] ALKZAGKDWUSJED-UHFFFAOYSA-N 0.000 claims description 2
- 230000000717 retained effect Effects 0.000 claims description 2
- 239000000047 product Substances 0.000 abstract description 22
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 239000003292 glue Substances 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 description 5
- 238000005234 chemical deposition Methods 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 2
- 239000006071 cream Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Abstract
The invention belongs to the technical field of semiconductor packaging, and relates to a preparation process of a single-layer ultrathin substrate packaging structure with a metal shielding layer and a product thereof, which comprises the following specific steps: 1) carrying out substrate processing to obtain a single-layer substrate 2) carrying out element packaging and glue sealing on the single-layer substrate to obtain a single-layer substrate packaging body 3) carrying out half cutting on the single-layer substrate packaging body by adopting a half cutting process to form an independent packaging body 4) carrying out metal shielding layer electroplating on the surface of the independent packaging body connected through back copper except the back copper 5) removing the back copper at the bottom layer joint to expose the bottom surface pins to obtain an independent semi-finished product packaging body 6) carrying out centralized overturning and fixing on the semi-finished product packaging body and carrying out centralized processing on the bottom surface pins. Half? The cut process separates the chemical plating treatment process of the pins from the electroplating treatment process of the metal shielding layer, avoids repeated electroplating at the pins, can intensively and uniformly treat the metal shielding layer and the pins of the single-layer ultrathin substrate packaging structure, and improves the production efficiency.
Description
Technical field
The invention belongs to technical field of semiconductor encapsulation, especially relate to a kind of preparation technology and goods thereof of the individual layer ultra thin substrate encapsulating structure with metal screen layer.
Background technology
Electromagnetic compatibility EMC (Electro-MagneticCompatibility) is that the electromagnetic energy that equipment produces neither produces interference, also not by the ability that the electromagnetic energy of other equipment disturbs to miscellaneous equipment.If can harmonious, normal work and unlikely mutual generation electromagnetic interference causes performance change maybe cannot work between each circuit module in a Circuits System, this Circuits System be claimed to be compatible.But along with the develop rapidly of current electronic technology, circuit function is constantly tending towards variation, structure is constantly tending towards complicated, operating power little by little strengthens and system frequency improves step by step, the requirement of sensitivity is simultaneously more and more higher, is difficult to guarantee system and does not produce certain electromagnetic radiation or be subject to extraneous electromagnetic interference.In order to make system reach electromagnetic compatibility, with the electromagnetic environment of system for foundation, must require that each circuit module does not produce electromagnetic radiation as far as possible, require that again it has the ability of certain electromagnetism interference, guarantee system reaches relative complete compatibility simultaneously.And the conventional method realizing packaging body shield electromagnetic interference adds metal suitable electromagnetic shielding metal-back outside packaging body, electromagnetic wave is shielded.Meanwhile, along with the epoch trend of the miniaturization of encapsulating structure encapsulation, the substrate of encapsulating structure is also towards lightening, miniaturized future development.
But, for industry existing individual layer ultra thin substrate series of products, if use conformalshielding processing procedure in this individual layer ultra-thin substrate product structure, in industrial circle, not yet someone uses at present, due to when carrying out metal screen layer and covering, pins of products place and metal screen layer can be caused to form short circuit.
But if pin electroplating processes is first done to individual layer ultra-thin substrate product, need first will to carry on the back copper by etch process to remove, whole piece product is cut and is singly divided into single encapsulating structure, and then form metal screen layer on single product, so separately operation is compared and is expended time in, and production efficiency is low.
Therefore, be necessary to provide the preparation technology to existing individual layer ultra thin substrate metal screen layer coating to be further improved, improving production efficiency is to solve the problem.
Summary of the invention
For above technical problem, the present invention has designed and developed a kind of preparation technology and goods thereof of the individual layer ultra thin substrate encapsulating structure with metal screen layer, realize the effective coating to ultrathin packaging structure metal screen layer, encapsulating structure is made to reach good electromagnetic shielding and Electro Magnetic Compatibility, and metal screen layer coating processes is carried out to the product of individual layer ultra thin substrate encapsulating structure improve, adopt hemisection (Halfcut) technique, disposable metal screen layer coating is carried out to whole piece individual layer ultra thin substrate encapsulating products, thus enhance productivity; And at the pin place of follow-up individual layer ultra thin substrate encapsulating products, plant tin ball or print solder paste, or deposit Ni/Au by chemical deposition process, the defect of short circuit when effectively avoiding pin to electroplate.
For achieving the above object, the invention provides following technical scheme:
A preparation technology for individual layer ultra thin substrate encapsulating structure with metal screen layer, its step of preparation process is:
1) carry out substrate processing, obtain single layer substrate;
2) component encapsulation and rubber seal are carried out to the single layer substrate obtained, obtain single layer substrate packaging body;
3) adopt half cutting process to carry out hemisection to single layer substrate packaging body, form the individual packages body be connected by back of the body copper;
4) metal screen layer plating is carried out to the surface beyond the back of the body copper of the individual packages body be connected by back of the body copper;
5) remove the back of the body copper of bottom junction, expose bottom surface pin, obtain independently semi-finished product packaging body;
6) double final package body carries out concentrating upset fixing, carries out centralization plating or plant tin ball, the process of brush tin cream to its bottom surface pin.
Further, the 1st) carry out substrate package in step, the concrete steps obtaining single layer substrate are:
A) get a support plate, in the upper and lower surface respectively pressing layers of copper of support plate, layers of copper is all etched thinning, to power on copper plated pillars in the layers of copper on support plate two sides;
B) after the plating of copper post terminates, in two sides pressing BT resin and the metal copper layer of support plate, copper post is packaged in BT resin bed, obtains matrix;
C) on matrix, open copper window and boring, the copper window offered and boring are electroplated, form pin; Figure chemical etching is carried out to the metal copper layer on matrix top, forms conductor layer No.1, now form substrate matrix;
D) the pin place on substrate matrix arranges solder mask, and solder mask is the green paint of weld-proof membrane;
E) the pin place electroplating surface nickel dam on substrate matrix or layer gold;
F) support plate on substrate matrix is removed, obtain the single layer substrate of support plate both sides respectively.
Further, as preferably, the thickness of the individual layer ultra thin substrate encapsulating structure of described band metal screen layer is at 0.2-0.8mm.
Further, as preferably, 2nd) concrete steps when step carries out component encapsulation and rubber seal to single layer substrate packaging body are: carry out component encapsulation and wire bonding or flip-chip operation to the single layer substrate packaging body obtained, after solidification IC chip, and carry out rubber seal, make IC chip, pin, bonding line or projection be packaged in rubber seal body, the thickness of rubber seal body is 0.175-0.48mm.
Further, as preferably, 3rd) step adopts half cutting process to the concrete steps that single layer substrate packaging body carries out hemisection to be: to the 2nd) the single layer substrate packaging body that obtains in step carries out radium-shine cutting, halfcut technique is adopted to carry out hemisection to single layer substrate packaging body, form the individual packages body be connected by back of the body copper, during hemisection, the back of the body copper of reservation single layer substrate packaging body is not cut and is worn, and the back of the body copper copper layer thickness of reservation is 11-25um, and the hemisection spacing between adjacent package body is 0.125-0.8mm.
Further, as preferably, the 4th), during step plating screen, at the copper coating of individual packages body except the back of the body copper of bottom surface or stainless steel, the thickness of metal screen layer is made to be greater than 1um.
Further, as preferably, the 6th) in step, when focusing on bottom surface pin, by planting tin ball or print solder paste focuses on pin.
Plant tin ball or print solder paste as pin and substituting, the 6th of focusing on done to pin) in step, also to doing of pin plating, first can plate one deck nickel dam on pin, and then plate one deck layer gold.
A kind of individual layer ultra thin substrate encapsulating structure with metal screen layer obtained by said method, comprises metal screen layer, rubber seal body, solder mask, nickel or layer gold, single layer substrate, BT resin bed, potted element, pin; Described metal screen layer covers on the surface of individual layer ultra thin substrate encapsulating structure except bottom, and the thickness of metal screen layer is greater than 1um.
Further, as preferably, the thickness of the single layer substrate packaging body of encapsulating structure is 0.05-0.3mm.
beneficial effect of the present invention is:
1, the present invention's application hemisection (HalfCut) technique, electro-magnetic screen layer (EMIShielding) can be carried out to whole piece product and apply operation, the electroplating processes process of the electroplating processes of pin and metal screen layer is separated, what avoid pin place repeats plating, and to the metal screen layer of the product of individual layer ultra thin substrate and the collection and uniform disposal of pin, thus enhance productivity.
2, The invention also achieves the combination of individual layer ultra thin substrate technique and electro-magnetic screen layer (EMIShielding) coating processes, can be applied to all types encapsulating products, applicability is wide.
3, the present invention adopts the type pins of products and plants tin ball or print solder paste, or deposits Ni/Au by chemical deposition process, the defect of substrate draw-foot short circuit when avoiding individual layer ultrathin products to be applied to electro-magnetic screen layer (EMIShielding) technique.
Accompanying drawing explanation
Fig. 1-8 is the process chart of single layer substrate packaging body;
Fig. 9-15 is the process chart of the halfcut of individual layer ultra thin substrate encapsulating structure;
Figure 16 is the assembling assumption diagram of encapsulating structure of the present invention;
Figure 17 be encapsulating structure of the present invention when halfcut after assembling assumption diagram;
Wherein, 1-support plate, 2-copper post, 3-BT resin bed, 4-metal copper layer, 5-boring, 6-conductor layer No.1,7-solder mask, 8-nickel dam or layer gold, 9-single layer substrate, 10-carry on the back copper, 11-rubber seal body, 12-halfcut excision district, 13-metal screen layer, 14-adhesive tape, 15-IC chip, 16-tin ball, 17-tin cream.
Embodiment
Below in conjunction with the embodiment of the present invention and accompanying drawing, be clearly and completely described the technical scheme in the embodiment of the present invention, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
embodiment 1
A preparation technology for individual layer ultra thin substrate encapsulating structure with metal screen layer, its step of preparation process is:
1) carry out substrate processing, obtain single layer substrate:
A). get a support plate 1, the respectively pressing layers of copper on the two sides of support plate 1, all etches thinning by layers of copper, to power on copper plated pillars 2 in the layers of copper on upper and lower two surfaces of support plate;
B). after copper post 2 plating terminates, in two surperficial pressing BT resin bed 3 and the metal copper layer 4 up and down of support plate, copper post 2 is packaged in BT resin bed 3, obtains matrix;
C). on matrix, open copper window and boring 5, the copper window offered and boring 5 are electroplated, forms pin; Figure chemical etching is carried out to the metal copper layer 4 on matrix top, forms conductor layer No.1 6, now form substrate matrix;
D). the pin place on substrate matrix arranges solder mask 7, and solder mask 7 is the green paint of weld-proof membrane;
E). the pin place electroplating surface nickel dam on substrate matrix or layer gold 8;
F). the support plate 1 on substrate matrix is removed, obtains the single layer substrate of support plate both sides respectively;
2) component encapsulation and rubber seal are carried out to the single layer substrate packaging body obtained:
Carry out component encapsulation and wire bonding or flip-chip to the single layer substrate packaging body obtained to operate, after solidification IC chip 15, and carry out rubber seal, make IC chip 15, pin, bonding line or projection be packaged in rubber seal body 11, the thickness of rubber seal body 11 is 0.175mm.
3) adopt half cutting process to carry out hemisection to single layer substrate packaging body, form the individual packages body be connected by back of the body copper 10:
Single layer substrate packaging body carries out radium-shine cutting, halfcut technique is adopted to carry out hemisection to single layer substrate packaging body, form the individual packages body be connected by back of the body copper 10, during hemisection, the back of the body copper 10 of reservation single layer substrate packaging body is not cut and is worn, back of the body copper 10 copper layer thickness retained is 11um, and the hemisection spacing between adjacent package body is 0.125mm.
4) carry out metal screen layer 13 to the surface beyond the back of the body copper 10 of the individual packages body be connected by back of the body copper 10 to electroplate;
Individual packages body except bottom surface the back of the body copper 10 except copper coating or stainless steel, make the thickness of metal screen layer 13 be greater than 1um.
5) remove the back of the body copper of bottom junction, expose bottom surface pin, obtain independently semi-finished product packaging body;
Removed by the back of the body copper 10 of etch process by the bottom junction of individual packages body, expose the pin of substrate bottom surface, obtain independently semi-finished product packaging body;
6) double final package body carries out concentrating upset fixing, focuses on its bottom surface pin.
Following process is carried out by being fixed into one edition with adhesive tape 14 after multiple semi-finished product packaging body upset, tin ball 16 is planted to bottom surface pin or print solder paste 17 focuses on, now, the thickness of the individual layer ultra thin substrate encapsulating structure of described band metal screen layer 13 is 0.2mm.
A kind of individual layer ultra thin substrate encapsulating structure with metal screen layer obtained by said method, comprises metal screen layer, rubber seal body, solder mask, nickel or layer gold, single layer substrate, BT resin bed, potted element, pin; Described metal screen layer covers on the surface of individual layer ultra thin substrate encapsulating structure except bottom, and the thickness of metal screen layer is greater than 1um, and the thickness of the single layer substrate of encapsulating structure is 0.05mm.
embodiment 2
On the basis of embodiment 1, carry out substrate package, the thickness obtaining single layer substrate packaging body A1 is 0.3mm, and when carrying out component encapsulation and rubber seal to the single layer substrate packaging body obtained, rubber seal layer A2 thickness is 0.48mm; During hemisection, the back of the body copper layers of copper A3 thickness of reservation is 25um, and the hemisection spacing B between adjacent package body is 0.8mm, and the thickness C of metal screen layer 13 is greater than 1um; The thickness of the individual layer ultra thin substrate encapsulating structure of whole band metal screen layer 13 is 0.8mm.
A kind of individual layer ultra thin substrate encapsulating structure with metal screen layer obtained by said method, comprises metal screen layer, rubber seal body, solder mask, nickel or layer gold, single layer substrate, BT resin bed, potted element, pin; Described metal screen layer covers on the surface of individual layer ultra thin substrate encapsulating structure except bottom, and the thickness of metal screen layer is greater than 1um, and the thickness of the single layer substrate of encapsulating structure is 0.3mm
embodiment 3
On the basis of embodiment 1, after halfcut process, the 6th) in step to doing of pin plating time, first on pin, plate one deck nickel dam, and then plate one deck layer gold, the defect of short circuit when can effectively avoid pin to electroplate.
The present invention has designed and developed a kind of preparation technology and goods thereof of the individual layer ultra thin substrate encapsulating structure with metal screen layer, realize the effective coating to ultrathin packaging structure metal screen layer, encapsulating structure is made to reach good electromagnetic shielding and Electro Magnetic Compatibility, and metal screen layer coating processes is carried out to the product of individual layer ultra thin substrate encapsulating structure improve, adopt Halfcut technique, disposable metal screen layer coating is carried out to whole piece individual layer ultra thin substrate encapsulating products, thus enhance productivity; And at the pin place of follow-up individual layer ultra thin substrate encapsulating products, plant tin ball or print solder paste, or deposit Ni/Au by chemical deposition process, the defect of short circuit when effectively avoiding pin to electroplate.The present invention's application hemisection (HalfCut) technique, can carry out electro-magnetic screen layer (EMIShielding) to whole piece (strip) product and apply operation, thus raise the efficiency; Achieve the combination of individual layer ultra thin substrate technique and electro-magnetic screen layer (EMIShielding) coating processes, all types encapsulating products can be applied to; Simultaneously, the present invention adopts the type pins of products and plants tin ball or print solder paste, or deposit Ni/Au by chemical deposition process, the defect of short circuit during substrate draw-foot plating when avoiding individual layer ultrathin products to be applied to electro-magnetic screen layer (EMIShielding) coating processes.
Finally, above embodiment and accompanying drawing are only in order to illustrate technical scheme of the present invention and unrestricted, although by above-described embodiment to invention has been detailed description, but those skilled in the art are to be understood that, various change can be made to it in the form and details, and not depart from claims of the present invention limited range.
Claims (10)
1. a preparation technology for the individual layer ultra thin substrate encapsulating structure with metal screen layer, it is characterized in that, its step of preparation process is:
1) carry out substrate processing, obtain single layer substrate;
2) component encapsulation and rubber seal are carried out to the single layer substrate obtained, obtain single layer substrate packaging body;
3) adopt half cutting process to carry out hemisection to single layer substrate packaging body, form the individual packages body be connected by back of the body copper;
4) metal screen layer plating is carried out to the surface beyond the back of the body copper of the individual packages body be connected by back of the body copper;
5) remove the back of the body copper of bottom junction, expose bottom surface pin, obtain independently semi-finished product packaging body;
6) double final package body carries out concentrating upset fixing, focuses on its bottom surface pin.
2. the preparation technology of a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to claim 1, is characterized in that, the 1st) carry out substrate processing in step, the concrete steps obtaining single layer substrate are:
A) get a support plate, in the upper and lower surface respectively pressing layers of copper of support plate, layers of copper is all etched thinning, to power on copper plated pillars in the layers of copper on support plate two sides;
B) after the plating of copper post terminates, in two sides pressing BT resin and the metal copper layer of support plate, copper post is packaged in BT resin bed, obtains matrix;
C) on matrix, open copper window and boring, the copper window offered and boring are electroplated, form pin; Figure chemical etching is carried out to the metal copper layer on matrix, forms conductor layer No.1, now form substrate matrix;
D) the pin place on substrate matrix arranges solder mask, and solder mask is the green paint of weld-proof membrane;
E) the pin place electroplating surface nickel dam on substrate matrix or layer gold;
F) support plate on substrate matrix is removed, obtain the single layer substrate of support plate both sides respectively.
3. the preparation technology of a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to claim 1, it is characterized in that, the thickness of the individual layer ultra thin substrate encapsulating structure of described band metal screen layer is 0.2-0.8mm.
4. the preparation technology of a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to claim 1, it is characterized in that, 2nd) concrete steps when step carries out component encapsulation and rubber seal to single layer substrate packaging body are: carry out component encapsulation and wire bonding or flip-chip operation to the single layer substrate packaging body obtained, after solidification IC chip, and carry out rubber seal, make IC chip, pin, bonding line or projection be packaged in rubber seal body, the thickness of rubber seal body is 0.175-0.48mm.
5. the preparation technology of a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to claim 1, it is characterized in that, 3rd) step adopts half cutting process to the concrete steps that single layer substrate packaging body carries out hemisection to be: to the 2nd) the single layer substrate packaging body that obtains in step carries out radium-shine cutting, halfcut technique is adopted to carry out hemisection to single layer substrate packaging body, form the individual packages body be connected by back of the body copper, during hemisection, the back of the body copper of reservation single layer substrate packaging body is not cut and is worn, the back of the body copper copper layer thickness retained is 11-25um, hemisection spacing between adjacent package body is 0.125-0.8mm.
6. the preparation technology of a kind of individual layer ultra thin substrate packaging body with metal screen layer according to claim 1, it is characterized in that, 4th) during step plating screen, individual packages body except bottom surface the back of the body copper except copper coating or stainless steel, make the thickness of metal screen layer be greater than 1um.
7. the preparation technology of a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to claim 1, is characterized in that, the 6th) in step, when focusing on bottom surface pin, by planting tin ball or print solder paste focuses on pin.
8. the preparation technology of a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to claim 1, it is characterized in that, the 6th) in step, when bottom surface pin is focused on, by changing plating, pin is processed, first on pin, plate one deck nickel dam, and then plate one deck layer gold.
9. a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer obtained by the claims, comprises metal screen layer, rubber seal body, solder mask, nickel or layer gold, single layer substrate, BT resin bed, potted element, pin; It is characterized in that: described metal screen layer covers on the surface of individual layer ultra thin substrate encapsulating structure except bottom, and the thickness of metal screen layer is greater than 1um.
10. a kind of individual layer ultra thin substrate encapsulating structure with metal screen layer according to the claims 9, is characterized in that: the thickness of the single layer substrate of encapsulating structure is 0.05-0.3mm.
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