CN105428264A - 半导体装置的制造方法 - Google Patents

半导体装置的制造方法 Download PDF

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Publication number
CN105428264A
CN105428264A CN201510462877.7A CN201510462877A CN105428264A CN 105428264 A CN105428264 A CN 105428264A CN 201510462877 A CN201510462877 A CN 201510462877A CN 105428264 A CN105428264 A CN 105428264A
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wire
lead
cut
semiconductor device
manufacture method
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CN201510462877.7A
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CN105428264B (zh
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今井诚
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

本发明提供一种能够抑制在切断的引线上产生尖端的半导体装置的制造方法。在半导体装置的制造方法中执行的引线键合工序中，对接合于导电性部件(1)的引线(2)的接合区域(3)以外的切断位置(4)进行半切断而形成切口(5)，使切口(5)振动以在切断位置(4)切断引线(2)。由于引线(2)被半切断，因此能够降低切断时对导电性部件(1)的损伤。另外，通过使形成于引线(2)的切口(5)振动，从而切口(5)的附近产生疲劳，引线(2)因来自切口(5)的断裂而切断。因此，能够抑制在引线(2)的切断面(2a)产生(至少朝向导电性部件(1)侧的)尖端。

Description

半导体装置的制造方法
技术领域
本发明涉及一种半导体装置的制造方法。
背景技术
半导体装置经过如下引线键合工序而制造，即，利用引线将配置于形成有电路图案的绝缘基板上的半导体元件(的电极)与设置于容纳有该绝缘基板的壳体上的引线框架进行电连接。
在该引线键合工序中，如果完成了半导体元件与引线框架的连接，则利用刀具将它们的连接部分以外的剩余的引线切断。但是，在切断接合于半导体元件侧的引线时，有可能在利用刀具切断引线时使半导体元件的表面受损。于是，提出如下技术：将引线的切断位置浮于空中进行半切断，并通过扯断来使半导体元件的与引线的接合部分不受损而切断引线(例如，参照专利文献1)。
现有技术文献
专利文献
专利文献1：日本特开2002-026058号公报
发明内容
技术问题
然而，在专利文献1的引线的切断方法中，有可能会随着扯断方向在引线的切断面产生尖端(及毛刺)。如果利用产生尖端的引线进行引线键合工序，则在将引线与连接对象物接合时，根据尖端的朝向或产生位置，该尖端会使接合部分受损。
本发明是鉴于此点而完成的，其目的在于提供一种能够抑制在切断的引线产生尖端的半导体装置的制造方法。
技术方案
根据本发明的一个方面，提供的半导体装置的制造方法，包括：接合工序，将引线接合于半导体装置所包含的导电性部件；切口形成工序，对接合于前述导电性部件的前述引线的接合区域以外的切断位置进行半切断而在前述引线形成切口；和，切断工序，使前述切口振动以在前述切断位置切断前述引线。
技术效果
根据公开的技术能够抑制在切断的引线的切断部产生尖端，因此减少对接合了这样的引线的导电性部件的应力。
附图说明
图1是用于说明第一实施方式的半导体装置的制造方法所包含的引线键合工序的示意图。
图2是用于说明半导体装置的制造方法所包含的引线键合工序的参考例的示意图。
图3是示出第二实施方式的引线键合装置的一个例子的主要部分的示意图。
图4是用于说明第二实施方式的半导体装置的制造方法的一个例子的示意图。
图5是用于说明第二实施方式的引线键合工序的引线的连接的示意图。
图6是用于说明第二实施方式的引线键合工序的引线的切断的示意图。
图7是用于说明第三实施方式的半导体装置的制造方法的一个例子的示意图。
符号说明
1：导电性部件
2：引线
2a：切断面
3：接合区域
4：切断位置
5：切口
6：振动部件
具体实施方式
参照附图对实施方式进行说明。
[第一实施方式]
利用图1对半导体装置的制造方法所包含的引线键合工序进行说明。
图1是用于说明第一实施方式的半导体装置的制造方法所包含的引线键合工序的图。
应予说明，图1(A)～图1(D)是以时序表示引线键合工序的示意图。
首先，将引线2接合于半导体装置所包含的导电性部件1(图1(A))。
引线2在其接合区域3与导电性部件1接合。另外，导电性部件1由金属等构成，例如为半导体装置所包含的半导体元件的电极、引线框架、在配置有半导体元件的绝缘基板上形成的电路图案等。
应予说明，就引线2而言，在引线2的一端先与其他导电性部件(省略图示)接合后，如图1(A)所示，在接合区域3与导电性部件1接合。由此，通过引线2实现导电性部件之间的电连接。
接下来，对接合于导电性部件1的引线2的接合区域3以外的切断位置4进行半切断而形成切口5(图1(B))。
然后，使切口5振动以在切断位置4切断引线2(图1(C)).
为了使切口5振动，例如使以预定的振动频率振动的振动部件6的前端部与切口5内部接触。就引线2的切口5而言，由于来自振动部件6的振动反复施加负载而会疲劳。即，构成引线2的切口5的晶粒发生滑动，从切口5向导电性部件1产生裂缝。如果切口5进一步受到来自振动部件6的振动，则裂缝向导电性部件1扩展，最终引线2在切断位置4断裂而切断(图1(D))。
这样，引线2在其切断面2a不产生尖端的情况下被切断。
这里，作为针对这样的半导体装置的制造方法所包含的引线键合工序的参考例，利用图2说明其它的引线键合工序。
图2是用于说明半导体装置的制造方法所包含的引线键合工序的参考例的示意图。
应予说明，图2(A)～图2(C)是以时序表示半导体装置的制造方法中执行的与图1不同的引线键合工序的示意图。另外，对与图1相同的构成标记相同的符号，并省略对其说明。
首先，与图1(A)同样，将引线2接合于半导体装置所包含的导电性部件1(图2(A))。
然后，例如使刀具6a向箭头方向(图2中从上方向导电性部件1侧)移动而切割接合于导电性部件1的引线2的接合区域3以外的切断位置4，从而切断引线2(图2(B))。
此时，虽然引线2在切断位置4被切断，但是导电性部件1的与切断位置4对应的部分有可能受到来自刀具6a的损伤。特别是在导电性部件1为半导体元件的电极的情况下，如果半导体元件的电极受到来自刀具6a的损伤，则电极下部的半导体层也受到损伤，导致半导体元件的特性劣化。
另外，引线2通过刀具6a相对于引线2向导电性部件1侧移动而被切断。因此，在引线2的切断面2a上，沿刀具6a的切断方向产生尖端2b(图2(C))。
特别是在引线2由铝等比较柔软的材质构成的情况下，容易产生这样的尖端2b。
如果利用在切断面2a产生了尖端2b的引线2进行引线键合工序，则由于尖端2b使引线2与导电性部件1之间产生缝隙，因此有可能降低引线2与导电性部件1之间的接合性。另外，在导电性部件1为半导体元件的电极的情况下，如果该电极受到尖端2b的应力，则由于会损伤电极下部的半导体层，而使半导体元件的特性劣化。
于是，在第一实施方式的半导体装置的制造方法中执行的引线键合工序中，如图1所说明的那样，对接合于导电性部件1的引线2的接合区域3以外的切断位置4进行半切断而形成切口5，并对切口5施加振动以在切断位置4切断引线2。
因为对引线2进行半切断，所以能够降低切割时对导电性部件1的损伤。另外，通过使形成于引线2的切口5振动，使切口5的附近疲劳，引线2通过切口5的断裂而被切断。因此，能够抑制在引线2的切断面2a产生(至少朝向导电性部件1侧的)尖端2b。这样，利用在切断面2a没有尖端2b的引线2进行引线键合工序时，能够将引线2适当地接合于导电性部件1。另外，即使在导电性部件1为半导体元件的电极的情况下，也不会给该电极带来应力，能够抑制半导体元件的特性劣化。
应予说明，如果由于切断位置4的切口5的振动而导致接合区域3也振荡，则引线2有可能从导电性部件1剥离。因此，对切口5的振动优选为使引线2在切口5处疲劳的同时，接合区域3不会由于振动而从导电性部件1剥离的振动频率。或者，优选地，将切断位置4设定在远离接合区域3的位置，以使接合区域3不受来自对切口5的振动的影响。
[第二实施方式]
在第二实施方式中，对在第一实施方式的半导体装置的制造方法中执行的引线键合工序进行更加详细的说明。
首先，利用图3对引线键合工序中利用的引线键合装置的一个例子进行说明。
图3是示出第二实施方式的引线键合装置的一个例子的主要部分的示意图。
应予说明，图3(A)示出将引线键合装置10设置在引线W的接合位置时的示意图，图3(B)示出从图3(A)的箭头S方向观察的引线键合装置10的键合工具11的前端部的示意图。
就引线键合装置10而言，在其前端部具备例如，如图3(A)所示的键合工具11、引线导向机构12、刀具13和夹钳机构14。
键合工具11设置有产生超声波的超声波振动子15，在键合工具11的前端部如图3(B)所示，形成有沿引线W的沟槽部11a。应予说明，超声波振动子15例如激励60kHz～150kHz的频率的超声波。另外，键合工具11沿箭头Y1在上下方向(图3中)移动。这样的键合工具11在如后所述那样有引线W提供时，键合工具11向下方(图3中)移动，用沟槽部11a将引线W夹住，并按压在接合预定部位。键合工具11一边按压引线W，一边接受来自超声波振动子15的超声波而进行超声波振动，从而将引线W接合于接合预定部位。引线W如此地接合于接合预定部位后，停止来自超声波振动子15的振动，键合工具11向上方(图3中)移动返回原来位置。
就引线导向机构12而言，在内部容纳引线W，并引导引线W向外部的供给。
刀具13与键合工具11相互独立，沿箭头Y2在上下方向(图3中)移动，在由引线W将连接对象物连接完成后，在多余的引线W上形成切口。另外，刀具13在切口形成后，与超声波振动子15接触，一边接受来自超声波振动子15的超声波而进行超声波振动，一边使刀具13的前端部与切口接触。
夹钳机构14设置于引线导向机构12，用于保持利用引线导向机构12引导的引线W，或用于松开以使引线W从引线导向机构12导出，从而控制从引线导向机构12的引线W的供给。
下面，利用图4对利用这样的引线键合装置10的半导体装置的制造方法的一个例子进行说明。
图4是用于说明第二实施方式的半导体装置的制造方法的一个例子的示意图。
应予说明，图4(A)～图4(D)是以时序表示在半导体装置的制造方法中执行的各工序的示意图。
首先，在由金属等构成的散热基底110的上表面配置焊料120a。在焊料120a上搭载绝缘基板120，所述绝缘基板120由在表面形成有例如由铜箔等构成的导电性图案123、在背面形成有例如由铜箔等构成的导电性图案122的陶瓷121构成。在该绝缘基板120的表面的导电性图案123上隔着焊料131a、132a分别搭载半导体元件131、132。
在这样的状态下，进行加热，使各焊料120a、131a、132a熔融后，冷却并再凝固。由此，成为散热基底110、绝缘基板120和半导体元件131、132成为一体的状态(图4(A))。
应予说明，就半导体元件131、132而言，例如其中一个可以使用开关元件，另一个可以使用二极管。开关元件，例如可应用IGBT(InsulatingGateBipolarTransistor：绝缘栅双极型晶体管)元件、功率MOSFET(MetalOxideSemiconductorFieldEffectTransistor：金属氧化物半导体场效应晶体管)等纵向功率半导体元件。
另外，二极管例如可应用SBD(SchottkyBarrierDiode：肖特基势垒二极管)、FWD(FreeWheelingDiode：续流二极管)元件等功率二极管元件。
绝缘基板120上载置的半导体元件131、132不限于这两种，根据半导体装置100的设计等，可以应用所需要的功能及数量的半导体元件。
接下来，以包围半导体元件131、132的方式，在散热基底110的外侧配置具备用于引出电流的引线框架端子151、152的树脂壳140。引线框架端子151、152例如作为发射极端子和集电极端子嵌入成型于树脂壳140。在该树脂壳140的与散热基底110相对的表面预先涂布有机硅粘接剂141，将树脂壳140与散热基底110的外周部分嵌合。之后，将有机硅粘接剂141加热固化，使树脂壳140和散热基底110固定(图4(B))。
然后，通过引线键合将引线框架端子151和半导体元件131(的电极(省略图示))利用引线161来电连接。同样通过引线键合将半导体元件131、132利用引线162进行电连接，并且将引线框架端子152和绝缘基板120的导电性图案123利用引线163进行电连接(图4(C))。
应予说明，引线161～163例如以铝为主要成分，直径设为100μm～500μm。
应予说明，对于上述引线键合工序的详细情况，在后面进行描述。
最后，通过在树脂壳140内填充密封树脂170而完成半导体装置100(图4(D))。
应予说明，也可以填充密封树脂170，并在其上面盖上盖子。
下面，对上述半导体装置的制造方法中的引线键合工序(图4(C))的详细情况进行说明。
首先，利用图5对半导体元件131与引线框架端子151之间的通过引线161的连接进行说明。
应予说明，在以下说明的引线键合工序并不限于半导体元件131与引线框架端子151之间的连接，也可以同样适用于半导体元件131、132之间的引线162、引线框架端子152与绝缘基板120的导电性图案123之间的引线163的连接。
图5是用于说明第二实施方式的引线键合工序的引线的连接的图。
应予说明，图5(A)示出使引线161的一端接合于半导体元件131时的状态，图5(B)示出使引线161接合于引线框架端子151时的状态，另外，图5(C)示出从箭头S观察的图5(A)、图5(B)的接合的键合工具11的前端部。
另外，在图5中，仅示出了半导体元件131和具备引线框架端子151的树脂壳140。
在引线键合装置10中，引线161在其一端部从引线导向机构12延伸的状态下被夹钳机构14保持。引线键合装置10移动其前端部，使引线161的一端部对准半导体元件131的键合位置。引线键合装置10向箭头Y方向(半导体元件131侧)移动键合工具11(图5(A))。
引线161的一端部被键合工具11的沟槽部11a夹住，并被按压在半导体元件131的键合位置。引线键合装置10通过在按压引线161的状态下使超声波振动子15激励超声波并使键合工具11振动，来使引线161的一端部接合于该位置(图5(C))。
应予说明，此时，引线键合装置10以使引线161的一端部与半导体元件131能够接合的按压力、振动频率、按压时间来使键合工具11动作。其中，振动频率，例如可以设定为由超声波振动子15激励的60kHz～150kHz的振动频率中的大于120kHz的较高的频率。应予说明，被这样按压的引线161如图5(C)所示，随着沟槽部11a的形状而变形。
引线键合装置10如果如此地完成了引线161的一端部向半导体元件131的接合，则停止超声波振动子15的激励，松开由夹钳机构14对引线161的保持，并从引线导向机构12提供引线161。引线键合装置10一边从引线导向机构12供给引线161，一边移动引线键合装置10的前端部而对准引线框架端子151的键合位置。应予说明，引线键合装置10如果完成其前端部与引线框架端子151的键合位置的对准，则夹钳机构14保持引线161。引线键合装置10与图5(A)的情况同样地将键合工具11向箭头Y方向(半导体元件131侧)移动(图5(B))。
引线161的一端部被键合工具11的沟槽部11a夹住，并被按压在引线框架端子151的键合位置。引线键合装置10通过在按压引线161的状态下使超声波振动子15激励超声波并使键合工具11振动，来使引线161的一端部接合于该位置(图5(C))。
应予说明，此时，引线键合装置10也以使引线161与引线框架端子151能够接合的按压力、振动频率、按压时间来使键合工具11动作。
根据以上内容，通过引线键合装置10能够利用引线161将半导体元件131和引线框架端子151电连接。
下面，利用图6对连接了半导体元件131和引线框架端子151的引线161的切断进行说明。
图6是用于说明第二实施方式的引线键合工序的引线的切断的图。
应予说明，图6(A)示出由引线键合装置10的刀具13在引线161的切断位置进行半切断时的状态，图6(B)示出由刀具13使半切断的位置进行振动时的状态。另外，图6(C)示出从箭头S观察图6(A)、图6(B)时的键合工具11的前端部。
引线键合装置10松开由夹钳机构14保持的引线161，以从引线导向机构12供给引线161。引线键合装置10一边供给引线161，一边将其前端部从图5(B)的位置向图6中右侧移动，并将刀具13对准引线161的任意的切断位置161b。
引线键合装置10将键合工具11向引线框架端子151侧移动。此时的键合工具11对引线161的按压力比图5(C)的情况的按压力小。因此，引线161处于如图6(C)所示的状态，即，被键合工具11的沟槽部11a和引线框架端子151按压到不会发生位置偏离的程度。
引线键合装置10维持该状态，并使刀具13向引线框架端子151侧移动，对引线161的切断位置161b进行半切断，从而形成切口(图6(A))。
应予说明，对于引线键合装置10，如果切口的深度相对于引线161的直径过于浅时，则在通过之后的振动使引线161疲劳断裂而进行切断时，存在需要时间或者无法切断的情况。另外，就引线键合装置10而言，切口的深度根据其装置，利用刀具13得到的切断深度有限。鉴于这一点，以切口的深度相对于引线161的直径(也可以称为厚度)为50％～95％左右(半切断后的引线161的剩余相对原来的直径为50％～5％)的方式由刀具13进行半切断。
引线键合装置10使处于前端部与形成于引线161的切断位置161b的切口接触的状态的刀具13(的与前端部相反一侧的端部)与超声波振动子15接触，并从超声波振动子15激励超声波(图6(B))。
此时的超声波振动子15激励的超声波的振动频率设置成比图5中说明的将引线161接合于半导体元件131或引线框架端子151时的振动频率小。这样的振动频率，例如为超声波振动子15激励的60kHz～150kHz的振动频率中的大约80kHz以下。
如果超声波振动子15激励超声波，则键合工具11也振动。通过将该超声波的振动频率设置得比引线161接合(图5)时小，不会使被键合工具11按压的引线161接合于引线框架端子151。
因此，引线161不会接合于引线框架端子151，在超声波振动的刀具13的前端部所接触的切口处也受到振动，并在切口引起疲劳断裂从而切断。此时，在切断的引线161的切断面不产生尖端。
这样，在第二实施方式的半导体装置的制造方法中执行的引线键合工序中，利用刀具13对接合于引线框架端子151且被键合工具11和引线框架端子151按压成不会发生位置偏离的引线161的切断位置161b进行半切断而形成切口。在将刀具13的前端部与切口接触的状态下，使从键合工具11传导振动的刀具13振动。伴随着刀具13的振动，切口也振动从而产生疲劳断裂，利用切断位置161b切断引线161。另外，在引线161的切断位置161b因疲劳断裂而切断时，键合工具11也同样振动。但是，由于该振动频率比使引线161接合于引线框架端子151时的振动频率小，因此，引线161不会接合于引线框架端子151。
因此，能够抑制在引线161的切断面产生尖端等，且能够在不接合于引线框架端子151的情况下适当地进行切断。
由此，引线键合装置10例如在再次进行其它的半导体装置100的半导体元件131与引线框架端子151之间的连接时(再次见图5(A))，如果是切断面没有尖端的引线161，则能够适当地接合于半导体元件131。此时，不会对半导体元件131施加应力，能够抑制半导体元件131的特性劣化。
应予说明，即使在第二实施方式中，如果对于切断位置161b的切口的振动引起接合区域161a也振动，则引线161有可能从引线框架端子151剥离。因此，对切口的来自刀具13的振动优选采用使引线161在切口处疲劳的同时，引线161的接合区域161a不会由于振动而从引线框架端子151剥离的振动频率。或者，优选地，将切断位置161b设定在远离接合区域161a的位置，以使引线161的接合区域161a不受来自对切口的振动的影响。
[第三实施方式]
在第三实施方式中，对使用具备芯片焊盘的引线框架的半导体装置的制造方法中执行的引线键合工序进行说明。
应予说明，引线键合工序中利用的引线键合装置采用与第二实施方式相同的装置。
图7是用于说明第三实施方式的半导体装置的制造方法的一个例子的图。
应予说明，图7(A)～图7(D)是按照时序表示半导体装置的制造方法中实施的各工序的示意图。图7(A)示出搭载了半导体元件184的引线框架180的主要部分俯视图，图7(B)～图7(D)示出图7(A)中的点划线X-X的剖视图。
首先，在具备芯片焊盘181和引线端子182的引线框架180的芯片焊盘181上，通过焊料183搭载半导体元件184(图7(A)、图7(B))。
就半导体元件184的搭载而言，在加热芯片焊盘181而使芯片焊盘181上的焊料183熔融后配置半导体元件184，使熔融的焊料183冷却并凝固，从而将半导体元件184固定在芯片焊盘181上。或者，也可以在芯片焊盘181上，例如，配置板状的焊料183，再在其上配置半导体元件184，在加热使板状的焊料183熔融后，冷却并再凝固，从而将半导体元件184固定在芯片焊盘181上。
应予说明，半导体元件184可以应用IGBT元件、功率MOSFET等纵向功率半导体元件或SBD、FWD元件等功率二极管元件。
然后，将引线端子182和半导体元件184(的电极(省略图示))例如利用在第二实施方式中说明的引线键合装置10通过引线185进行电连接(图7(C))。
此时，通过由引线键合装置10进行引线键合，能够得到与第二实施方式同样的效果。
应予说明，引线185例如以铝为主要成分，直径设为100μm～500μm。
其次，进行树脂传递模成型，利用树脂186将芯片焊盘181上的焊料183、半导体元件184和引线185封装(图7(D))。
应予说明，如上所述，在第一实施方式、第二实施方式和第三实施方式中，以利用引线(线状)进行的引线键合工序为例进行了说明，但是，并不限于此种引线，带状引线也同样可以进行引线键合。

Claims (9)

1.一种半导体装置的制造方法，包括：
接合工序，将引线接合于半导体装置所包含的导电性部件；
切口形成工序，对接合于所述导电性部件的所述引线的接合区域以外的切断位置进行半切断而在所述引线形成切口；和
切断工序，使所述切口振动而在所述切断位置切断所述引线。
2.根据权利要求1所述的半导体装置的制造方法，其特征在于，
在所述接合工序中，通过利用键合工具一边将所述接合区域朝所述导电性部件侧按压，一边对所述接合区域施加振动，由此进行接合，
在所述切口形成工序和所述切断工序中，所述引线被所述键合工具和所述导电性部件压住。
3.根据权利要求2所述的半导体装置的制造方法，其特征在于，
在所述切口形成工序中，利用刀具将所述引线在所述切断位置进行半切断，
在所述切断工序中，所述刀具在切入所述切口的状态下，通过所述键合工具的振动而振动。
4.根据权利要求3所述的半导体装置的制造方法，其特征在于，
所述键合工具在所述切断工序中的振动频率比在所述接合工序中的振动频率小。
5.根据权利要求1～4中任一项所述的半导体装置的制造方法，其特征在于，所述切口的深度相对于所述引线的厚度为50％～95％。
6.根据权利要求1～5中任一项所述的半导体装置的制造方法，其特征在于，所述切断位置与所述接合区域之间的距离在预定长度以上。
7.根据权利要求1～6中任一项所述的半导体装置的制造方法，其特征在于，在所述切断工序后，还具有将切断的所述引线接合于半导体元件的电极的工序。
8.根据权利要求1～7中任一项所述的半导体装置的制造方法，其特征在于，所述引线以铝为主要成分。
9.根据权利要求1～8中任一项所述的半导体装置的制造方法，其特征在于，所述引线为线状或带状。
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