CN105420685B - 用于减少背面沉积和减少基片边缘处的厚度变化的系统和方法 - Google Patents

用于减少背面沉积和减少基片边缘处的厚度变化的系统和方法 Download PDF

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CN105420685B
CN105420685B CN201510582177.1A CN201510582177A CN105420685B CN 105420685 B CN105420685 B CN 105420685B CN 201510582177 A CN201510582177 A CN 201510582177A CN 105420685 B CN105420685 B CN 105420685B
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substrate
gas
backside
film
edge
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CN105420685A (zh
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赛沙·瓦拉达拉简
尚卡·斯瓦米纳坦
桑格伦特·桑普伦格
弗兰克·帕斯夸里
泰德·明歇尔
阿德里安·拉瓦伊
穆罕默德·萨布里
科迪·巴尼特
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Lam Research Corp
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    • H—ELECTRICITY
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    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/345—Silicon nitride
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/45523—Pulsed gas flow or change of composition over time
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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CN201510582177.1A 2014-09-12 2015-09-14 用于减少背面沉积和减少基片边缘处的厚度变化的系统和方法 Active CN105420685B (zh)

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US10094018B2 (en) * 2014-10-16 2018-10-09 Lam Research Corporation Dynamic precursor dosing for atomic layer deposition
TWI734770B (zh) * 2016-04-24 2021-08-01 美商應用材料股份有限公司 用於防止空間ald處理腔室中之背側沉積的設備
US10777386B2 (en) * 2017-10-17 2020-09-15 Lam Research Corporation Methods for controlling plasma glow discharge in a plasma chamber
WO2019108377A1 (en) * 2017-11-29 2019-06-06 Tokyo Electron Limited Back-side friction reduction of a substrate
JP7178177B2 (ja) * 2018-03-22 2022-11-25 東京エレクトロン株式会社 基板処理装置
US12112930B2 (en) 2018-08-31 2024-10-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method for improving deposition process
US12412736B2 (en) * 2018-09-28 2025-09-09 Lam Research Corporation Methods and systems for managing byproduct material accumulation during plasma-based semiconductor wafer fabrication process
WO2020159708A1 (en) * 2019-01-31 2020-08-06 Lam Research Corporation Showerhead with configurable gas outlets
JP2022544221A (ja) 2019-08-16 2022-10-17 ラム リサーチ コーポレーション ウエハ内の様々な反りを補償するために空間を調整する堆積
US11031236B2 (en) 2019-10-01 2021-06-08 Taiwan Semiconductor Manufacturing Co., Ltd. Method for improving surface of semiconductor device
CN112981372B (zh) * 2019-12-12 2024-02-13 Asm Ip私人控股有限公司 衬底支撑板、包括它的衬底处理设备以及衬底处理方法
KR20260049844A (ko) * 2019-12-20 2026-04-14 램 리써치 코포레이션 에지/중심 불균일성 완화를 위한 웨이퍼의 외측 주변부 근방 리세스된 영역들을 특징으로 하는 반도체 프로세싱 척들
US11923295B2 (en) 2020-02-19 2024-03-05 Taiwan Semiconductor Manufacturing Co., Ltd. Interconnect level with high resistance layer and method of forming the same
US11495483B2 (en) * 2020-10-15 2022-11-08 Applied Materials, Inc. Backside gas leakby for bevel deposition reduction
US12009246B2 (en) * 2021-03-26 2024-06-11 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate holder and methods of use
US12601057B2 (en) * 2021-12-11 2026-04-14 Lam Research Corporation Soaking and ESC clamping sequence for high bow substrates
CN116334583B (zh) * 2021-12-22 2026-01-09 中微半导体设备(上海)股份有限公司 加热装置、化学气相沉积设备及吹扫方法
JP7845786B2 (ja) * 2022-04-27 2026-04-14 東京エレクトロン株式会社 基板処理方法及び基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275976A (en) * 1990-12-27 1994-01-04 Texas Instruments Incorporated Process chamber purge module for semiconductor processing equipment
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
CN101147248A (zh) * 2005-03-21 2008-03-19 东京毅力科创株式会社 等离子体增强原子层沉积系统和方法
CN102067279A (zh) * 2008-06-19 2011-05-18 应用材料股份有限公司 供应清洁气体至工艺腔室的方法和系统

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5871811A (en) * 1986-12-19 1999-02-16 Applied Materials, Inc. Method for protecting against deposition on a selected region of a substrate
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
US5238499A (en) 1990-07-16 1993-08-24 Novellus Systems, Inc. Gas-based substrate protection during processing
US5534072A (en) * 1992-06-24 1996-07-09 Anelva Corporation Integrated module multi-chamber CVD processing system and its method for processing subtrates
US5292554A (en) * 1992-11-12 1994-03-08 Applied Materials, Inc. Deposition apparatus using a perforated pumping plate
US6190732B1 (en) * 1998-09-03 2001-02-20 Cvc Products, Inc. Method and system for dispensing process gas for fabricating a device on a substrate
US6037258A (en) * 1999-05-07 2000-03-14 Taiwan Semiconductor Manufacturing Company Method of forming a smooth copper seed layer for a copper damascene structure
US6223447B1 (en) 2000-02-15 2001-05-01 Applied Materials, Inc. Fastening device for a purge ring
WO2003065424A2 (en) * 2002-01-25 2003-08-07 Applied Materials, Inc. Apparatus for cyclical deposition of thin films
US7138014B2 (en) * 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
JP3621946B1 (ja) * 2004-02-27 2005-02-23 三菱重工業株式会社 有機ハロゲン化合物放電分解装置およびその方法
KR100682305B1 (ko) * 2005-05-24 2007-02-15 주식회사 에이디피엔지니어링 클램핑 장치
US7795160B2 (en) * 2006-07-21 2010-09-14 Asm America Inc. ALD of metal silicate films
US7993465B2 (en) 2006-09-07 2011-08-09 Applied Materials, Inc. Electrostatic chuck cleaning during semiconductor substrate processing
JP2008066159A (ja) * 2006-09-08 2008-03-21 Noritsu Koki Co Ltd プラズマ発生装置およびそれを用いるワーク処理装置
US20080179287A1 (en) 2007-01-30 2008-07-31 Collins Kenneth S Process for wafer backside polymer removal with wafer front side gas purge
JP2008198739A (ja) * 2007-02-09 2008-08-28 Tokyo Electron Ltd 載置台構造、これを用いた処理装置及びこの装置の使用方法
JP2008214683A (ja) * 2007-03-01 2008-09-18 Mitsubishi Heavy Industries Food & Packaging Machinery Co Ltd バリヤ膜形成装置、充填システム、バリヤ膜被覆容器の製造方法
KR101210210B1 (ko) * 2008-08-05 2012-12-07 도쿄엘렉트론가부시키가이샤 배치대 구조, 성막 장치 및 성막 방법
GB201207448D0 (en) * 2012-04-26 2012-06-13 Spts Technologies Ltd Method of depositing silicon dioxide films
JP5918631B2 (ja) * 2012-06-04 2016-05-18 Ｊｓｗアフティ株式会社 ＺｎＯ膜形成方法及びＺｎＯ膜形成装置
CN104008997A (zh) * 2014-06-04 2014-08-27 复旦大学 一种超低介电常数绝缘薄膜及其制备方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5275976A (en) * 1990-12-27 1994-01-04 Texas Instruments Incorporated Process chamber purge module for semiconductor processing equipment
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
CN101147248A (zh) * 2005-03-21 2008-03-19 东京毅力科创株式会社 等离子体增强原子层沉积系统和方法
CN102067279A (zh) * 2008-06-19 2011-05-18 应用材料股份有限公司 供应清洁气体至工艺腔室的方法和系统

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