CN105405853B - Manufacturing process for image sensing device - Google Patents
Manufacturing process for image sensing device Download PDFInfo
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- CN105405853B CN105405853B CN201510512027.3A CN201510512027A CN105405853B CN 105405853 B CN105405853 B CN 105405853B CN 201510512027 A CN201510512027 A CN 201510512027A CN 105405853 B CN105405853 B CN 105405853B
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Abstract
The present invention discloses a kind of image sensing device, is included in described image sensing chip lower surface and makes a photoresist layer as mask layer by way of photoetching development；Bowl-shape hole is formed by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, first time isotropic dry etch technological parameter is：It is 800sccm, coil power 3000, radio-frequency bias voltage bias RF/W, etch period 180s that chamber, which presses 90mTorr, SF6 flow,；The first anisotropic etching and the second anisotropic etching are used by the micro- DSE200C deep silicon etch machines in north alternately, to be formed down straight hole in the bottom in bowl-shape hole；Photoresist layer as mask layer is gone using acetone；Step 5: the chamfering that twice etching generates before second of isotropic dry etch removal.The present invention reduces structural stress, improves the stability of yield and electrical property, shortens process cycle；Chip size smaller when wafer being made to manufacture, chip package size can be substantially reduced, and have smaller depth-to-width ratio.
Description
Technical field
The present invention relates to a kind of manufacturing process for image sensing device, belong to technical field of semiconductor encapsulation.
Background technology
Imaging sensor has been widely used in the digital device of digital camera, camera phone etc..Image passes
Sensor module may include the imaging sensor for image information to be converted to power information.In particular, imaging sensor can wrap
Electronics can be converted photons to show and store the semiconductor devices of image by including.The example of imaging sensor includes charge coupling
Clutch part（CCD）, complementary metal oxide silicon（CMOS）Imaging sensor（CIS）Deng.
Blind hole is a kind of state-of-the-art technology realized and interconnected between chip in imaging sensor.It is primarily characterized in that, it can be with
It realizes between chip and chip, between wafer and wafer or the line conduction of wafer and chip asked.With with wire bonding side
Traditional Integrated Circuit that formula connects each chip（IC）Packaged type is compared, and is with silicon hole technology
Main three-dimension packaging mode has the advantage that：Firstly, since not using wire bonding, wiring distance is shorter, and integrated level is more
Height, faster to signal transmission, power consumption is lower；Secondly, volume smaller, weight is lighter, under same package area, can integrate more
More functions；Finally, process costs are greatly reduced, and are suitble to produce in enormous quantities.
The two step photoresist mask that have been formed by of more inclination angle type TSV structures make after existing conventional bonding, with specific reference to
Shown in Fig. 1, include the following steps：
Step S1 forms first time mask with reference to figure 2 on 1 surface of wafer；
Step S2 forms etching groove, rear acetone removes mask with reference to figure 3 in crystal column surface；
Step S3 forms second of mask with reference to figure 4 in etching rooved face；
Step S4 forms etched hole, rear acetone removes mask with reference to figure 5 in etching rooved face；
Step S5 forms insulating layer with reference to figure 6 in through-hole and crystal column surface；
Step S6 exposes conductive metal pad with reference to figure 7 using the method for laser boring；
Step S7 first uses metal sputtering with reference to figure 8（PVD）Method in through-hole and crystal column surface splash-proofing sputtering metal titanium
（Thickness is about 0.13 ~ 0.17um）And metallic copper（Thickness is about 0.9 ~ 1.1um）And electric plating method is in wafer and TSV tables
Face forms conductive metal coating.
Although the prior art realizes the sequencing of TSV making, but process described above uses two step photoresist mask
Method, it is long that TSV makes circuit, period, cannot effectively save production cost；Such as following disadvantage：1, before and after two step photoetching
Photoetching deviation twice is inevitable；2, TSV techniques as described above PAD spacing during wafer manufacturing is larger generally exists
The size for the single chip that 200um or so is produced in this way is larger, cannot preferably embody integrated micro.
Invention content
It is an object of the present invention to provide a kind of manufacturing process for image sensing device, this is used for the system of image sensing device
It makes technique and reduces structural stress, improve the stability of yield and electrical property, shorten process cycle；Chip when wafer being made to manufacture
Smaller, chip package size can be substantially reduced, and had smaller depth-to-width ratio, reduced technology difficulty, realize industrialization.
In order to achieve the above objectives, the technical solution adopted by the present invention is：A kind of image sensing device, described image sensor
Part includes image sensor chip, transparent cover plate, and the upper surface of this image sensor chip has photosensitive area, the transparent cover plate edge
Have support cofferdam to the shape between transparent cover plate and image sensor chip between the top surface edge of image sensor chip
At cavity, bonded by glue layer between this support cofferdam and image sensor chip, the surrounding of image sensor chip lower surface
Edge area distribution has several blind holes, described image sensing chip lower surface and blind hole side surface to have passivation layer, this blind hole bottom
There is the pin pad of image sensor chip, the passivation layer surface opposite with image sensor chip to have metallic conduction figure in portion
Shape layer, a soldermask layer are located at the metallic conductive pattern layer surface opposite with passivation layer, are provided with several through-holes on this soldermask layer, and one
Soldered ball is electrically connected by the through-hole with metallic conductive pattern layer, and the surface that the support cofferdam is contacted with image sensor chip is equal
It is even to be equipped with several shrinkage pools；
Straight hole of the blind hole by bowl-shape hole and positioned at bowl-shape hole bottom forms, and the blind hole is obtained by following technique,
Include the following steps：
Step 1: making the light as mask layer by way of photoetching development in described image sensing chip lower surface
Photoresist layer；
Step 2: bowl-shape hole is formed by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, the
One time isotropic dry etch technological parameter is：It is 800sccm, coil power 3000, radio frequency that chamber, which presses 90mTorr, SF6 flow,
Bias voltage bias RF/W, etch period 180s；
Step 3: using the first anisotropic etching and the second anisotropy by the micro- DSE200C deep silicon etch machines in north
It etches alternately, to be formed down straight hole in the bottom in bowl-shape hole,
The first anisotropic etch process parameter is：It is 200sccm, coil power that chamber, which presses 20mTorr, C4F8 flow,
2000, radio-frequency bias voltage bias RF/W, etch period 2s, the second anisotropic etch process parameter are：Chamber pressure
35mTorr, SF6 flow are 350sccm, coil power 2500, radio-frequency bias voltage bias RF/W23, etch period 5.5s；
Step 4: removing the photoresist layer as mask layer using acetone；
Step 5: with reference to figure 15, the chamfering that twice etching generates before second of isotropic dry etch removal, for the first time
Isotropic dry etch technological parameter is：It is 800sccm, O that chamber, which presses 50mTorr, SF6 flow,2Flow is 50sccm, coil work(
Rate 4000, radio-frequency bias voltage bias RF/W50, etch period 120s；
Step 6: forming the passivation layer in the side surface in bowl-shape hole and straight hole；
Step 7: exposing the pin pad positioned at bottom by laser boring, and drawn by the realization of metallic conductive pattern layer
Electrical contact connection between foot and pin pad.
Further improved scheme is as follows in above-mentioned technical proposal：
1. in said program, support cofferdam thickness is 20 ~ 50 microns.
2. in said program, support cofferdam width is 200 ~ 300 microns, a diameter of 5 ~ 10 microns of the shrinkage pool.
3. in said program, the upper opening in bowl-shape hole is 120 ~ 130 μm in the blind hole, under shed is 62 ~ 68 μm, hole
Depth is 40 ~ 45 microns.
4. in said program, the upper opening of straight hole is 55 ~ 60 μm in the blind hole, and under shed is 45 ~ 50 μm, and hole depth is
34 ~ 36 microns.
5. in said program, the passivation layer process is that spin coating, spraying, roller coating, silk-screen printing, slot coated, ink-jet are beaten
One kind in print, rolling, vacuum pressing-combining.
6. in said program, the anti-welding layer material is in benzocyclobutene, polyimides, photosensitive type epoxy resin
It is a kind of.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
1. the present invention is used for the manufacturing process of image sensing device, inclination angle type TSV works are made relative to two step mask
Skill, the present invention make the specific Y shape TSV structure formed by bowl-shape hole and straight hole using a step mask, can effectively shorten technique
Flow reduces production cost, reduces structural stress, can also be by more by the specific Y shape TSV structure that bowl-shape hole and straight hole are formed
Step dry etching obtains；Photoetching deviation problem caused by the present invention photoetching natural screening Twi-lithography, is improved
The stability of yield and electrical property；Photoetching improves production efficiency, shortens process cycle；Bowl-shape hole is formed with straight hole
The TSV through hole made compared to two step mask of blind hole crystal column surface silicon is etched less generation stress it is less.
2. the present invention be used for image sensing device manufacturing process, one step etching formed by bowl-shape hole and straight hole shape
At specific Y shape TSV silicon holes etch the Y type holes to be formed compared to multistep and have the depth-to-width ratio of bigger, core when making wafer manufacture in this way
Chip size smaller, chip package size can be substantially reduced；And the spy formed by bowl-shape hole and straight hole that such step etching is formed
Determine Y shape TSV silicon holes has smaller depth-to-width ratio compared to straight hole TSV, reduces technology difficulty, is advantageously implemented industrialization.
Description of the drawings
Attached drawing 1 is existing blind hole forming method flow diagram one；
Attached drawing 2a ~ g is existing blind hole forming method flow diagram two；
Attached drawing 3 is image sensing device structural schematic diagram of the present invention；
Attached drawing 4 is that cofferdam structure schematic diagram is supported in image sensing device of the present invention；
Attached drawing 5 is the process flow chart one of blind hole in wafer level image sensing module of the present invention；
Attached drawing 6a ~ h is the process flow chart two of blind hole in wafer level image sensing module of the present invention.
In the figures above：1, image sensor chip；2, transparent cover plate；3, photosensitive area；4, cofferdam is supported；5, glue layer；6、
Blind hole；7, passivation layer；9, metallic conductive pattern layer；10, soldermask layer；11, through-hole；12, soldered ball；13, cavity.
Specific implementation mode
With reference to embodiment, the invention will be further described：
Embodiment：A kind of manufacturing process for image sensing device, described image sensor part include image sensing core
The upper surface of piece 1, transparent cover plate 2, this image sensor chip 1 has photosensitive area 3,2 edge of the transparent cover plate and image sensing
Have support cofferdam 4 to form cavity between transparent cover plate 2 and image sensor chip 1 between the top surface edge of chip 1
13, it is bonded by glue layer 5 between this support cofferdam 4 and image sensor chip 1, the surrounding of 1 lower surface of image sensor chip
Edge area distribution has several blind holes 6,1 lower surface of described image sensing chip and 6 side surface of blind hole to have passivation layer 7, this is blind
6 bottom of hole has the pin pad 8 of image sensor chip 1, and the surface opposite with image sensor chip 1 of the passivation layer 7 has
Metallic conductive pattern layer 9, a soldermask layer 10 are located at the surface opposite with passivation layer 7 of metallic conductive pattern layer 9, on this soldermask layer 10
Several through-holes 11 are provided with, a soldered ball 12 is electrically connected by the through-hole 11 with metallic conductive pattern layer 9, the support cofferdam 4
The surface contacted with image sensor chip 1 is uniformly provided with several shrinkage pools.
Straight hole of the blind hole 6 by bowl-shape hole and positioned at bowl-shape hole bottom forms, and the blind hole 6 is obtained by following technique
, include the following steps：
Step 1: making one by way of photoetching development as mask layer in 1 lower surface of described image sensing chip
Photoresist layer；
Step 2: bowl-shape hole is formed by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, the
One time isotropic dry etch technological parameter is：Chamber pressure 90mTorr, SF6 flow is 800sccm, coil power 3000W, penetrates
Frequency bias voltage 0W, etch period 180s；
Step 3: using the first anisotropic etching and the second anisotropy by the micro- DSE200C deep silicon etch machines in north
Etching alternately, to be formed down straight hole in the bottom in bowl-shape hole, carve by the first anisotropic etching and the second anisotropy
It is 50 times to lose alternate frequency, and the first anisotropic etch process parameter is：Chamber pressure 20mTorr, C4F8 flow be
200sccm, coil power 2000W, radio-frequency bias voltage 0W, etch period 2s, the second anisotropic etch process parameter
For：It is 350sccm, coil power 2500W, 23 W of radio-frequency bias voltage, etch period 5.5s that chamber, which presses 35mTorr, SF6 flow,；
Step 4: removing the photoresist layer as mask layer using acetone；
Step 5: the chamfering that twice etching generates before second of isotropic dry etch removal, first time isotropism
Dry etch process parameter is：It is 800sccm, O that chamber, which presses 50mTorr, SF6 flow,2Flow be 50sccm, coil power 4000W,
50 W of radio-frequency bias voltage, etch period 120s；
Step 6: forming the passivation layer 7 in the side surface in bowl-shape hole and straight hole；
Step 7: exposing the pin pad positioned at bottom by laser boring, and drawn by the realization of metallic conductive pattern layer 9
Electrical contact connection between foot and pin pad.
In above-mentioned blind hole 6 the upper opening in bowl-shape hole be 120 either 125 μm of under sheds be 64 or 66 μm, hole depth be 42 or
45 microns of person.
In above-mentioned blind hole 6 the upper opening of straight hole be 56 either 58 μm of under sheds be 46 either 50 μm of hole depths be 34 or 36
Micron.
Above-mentioned 4 thickness of support cofferdam is 25 microns or 40 microns.
Above-mentioned 4 width of support cofferdam is a diameter of 6 microns or 9 microns of 220 microns of either 270 microns of shrinkage pools.
7 technique of above-mentioned passivation layer is spin coating, spraying, roller coating, silk-screen printing, slot coated, inkjet printing, rolling, vacuum
One kind in pressing.10 material of above-mentioned soldermask layer is benzocyclobutene.
When using above-mentioned manufacturing process for image sensing device, inclination angle type TSV works are made relative to two step mask
Skill, the present invention make the specific Y shape TSV structure formed by bowl-shape hole and straight hole using a step mask, can effectively shorten technique
Flow reduces production cost, reduces structural stress, can also be by more by the specific Y shape TSV structure that bowl-shape hole and straight hole are formed
Step dry etching obtains；Photoetching deviation problem caused by the present invention photoetching natural screening Twi-lithography, is improved
The stability of yield and electrical property；Photoetching improves production efficiency, shortens process cycle；Bowl-shape hole is formed with straight hole
The TSV through hole made compared to two step mask of blind hole crystal column surface silicon is etched less generation stress it is less；Again, one walks
What etching was formed with the specific Y shape TSV silicon holes that straight hole is formed compare multistep by bowl-shape hole, which etches the Y type holes formed, bigger
Depth-to-width ratio, chip size smaller when making wafer manufacture in this way, chip package size can be substantially reduced；And such step etching is formed
Compare straight hole TSV with the specific Y shape TSV silicon holes that straight hole is formed by bowl-shape hole and have smaller depth-to-width ratio, reduce technique hardly possible
Degree, is advantageously implemented industrialization.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (3)
1. a kind of manufacturing process for image sensing device, it is characterised in that：Described image sensor part includes image sensing
Chip（1）, transparent cover plate（2）, this image sensor chip（1）Upper surface have photosensitive area（3）, the transparent cover plate（2）Side
Edge and image sensor chip（1）Top surface edge between have support cofferdam（4）To in transparent cover plate（2）And image sensing
Chip（1）Between form cavity（13）, this support cofferdam（4）With image sensor chip（1）Between pass through glue layer（5）Bonding,
Image sensor chip（1）The edge area distribution of lower surface has several blind holes（6）, described image sensing chip（1）Under
Surface and blind hole（6）Side surface has passivation layer（7）, this blind hole（6）Bottom has image sensor chip（1）Pin pad
（8）, the passivation layer（7）With image sensor chip（1）Opposite surface has metallic conductive pattern layer（9）, a soldermask layer
（10）Positioned at metallic conductive pattern layer（9）With passivation layer（7）Opposite surface, this soldermask layer（10）On be provided with several through-holes
（11）, a soldered ball（12）Pass through the through-hole（11）With metallic conductive pattern layer（9）Electrical connection, the support cofferdam（4）With figure
As sensing chip（1）The surface of contact is uniformly provided with several shrinkage pools（14）；
The blind hole（6）By bowl-shape hole（61）With positioned at bowl-shape hole（61）The straight hole of bottom（62）Composition, the blind hole（6）Pass through
Following technique obtains, and includes the following steps：
Step 1: in described image sensing chip（1）Lower surface makes the light as mask layer by way of photoetching development
Photoresist layer；
Step 2: forming bowl-shape hole by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, for the first time
Isotropic dry etch technological parameter is：Chamber presses 90mTorr, SF6 flow inclined for 800sccm, coil power 3000W, radio frequency
Set voltage 0W, etch period 180s；
Step 3: using the first anisotropic etching and the second anisotropic etching by the micro- DSE200C deep silicon etch machines in north
Alternately, to be formed down straight hole in the bottom in bowl-shape hole, the first anisotropic etching and the second anisotropic etching are handed over
It it is 45 ~ 55 times for number, the first anisotropic etch process parameter is：Chamber press 20mTorr, C4F8 flow be 200sccm,
Coil power 2000W, radio-frequency bias voltage 0W, etch period 2s, the second anisotropic etch process parameter are：Chamber pressure
35mTorr, SF6 flow are 350sccm, coil power 2500W, 23 W of radio-frequency bias voltage, etch period 5.5s；
Step 4: removing the photoresist layer as mask layer using acetone；
Step 5: the chamfering that twice etching generates before second of isotropic dry etch removal, first time isotropism dry method
Etch process parameters are：Chamber pressure 50mTorr, SF6 flow be 800sccm, O2 flow be 50sccm, coil power 4000W, radio frequency
50 W of bias voltage, etch period 120s；
Step 6: in bowl-shape hole（61）And straight hole（62）Side surface form the passivation layer（7）；
Step 7: exposing the pin pad positioned at bottom by laser boring（8）, and pass through metallic conductive pattern layer（9）It realizes
Pin and pin pad（8）Between electrical contact connection.
2. the manufacturing process according to claim 1 for image sensing device, it is characterised in that：The soldermask layer（10）
Material is one kind in benzocyclobutene, polyimides, photosensitive type epoxy resin.
3. the manufacturing process according to claim 1 for image sensing device, it is characterised in that：The passivation layer（7）
Technique is one kind in spin coating, spraying, roller coating, silk-screen printing, slot coated, inkjet printing, rolling, vacuum pressing-combining.
Priority Applications (1)
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| CN201510512027.3A CN105405853B (en) | 2015-08-20 | 2015-08-20 | Manufacturing process for image sensing device |
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|---|---|---|---|
| CN201510512027.3A CN105405853B (en) | 2015-08-20 | 2015-08-20 | Manufacturing process for image sensing device |
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| CN105405853A CN105405853A (en) | 2016-03-16 |
| CN105405853B true CN105405853B (en) | 2018-10-09 |
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| CN107331629A (en) * | 2017-08-15 | 2017-11-07 | 苏州科阳光电科技有限公司 | The wafer scale preparation method and bio-identification chip of a kind of bio-identification chip |
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| JP5754239B2 (en) * | 2011-05-24 | 2015-07-29 | ソニー株式会社 | Semiconductor device |
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Address after: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee after: Suzhou Keyang Semiconductor Co., Ltd Address before: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee before: SUZHOU KEYANG PHOTOELECTRIC TECHNOLOGY CO., LTD. |
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