CN105355636B - The manufacturing method of semiconductor image sensor part - Google Patents
The manufacturing method of semiconductor image sensor part Download PDFInfo
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- CN105355636B CN105355636B CN201510511908.3A CN201510511908A CN105355636B CN 105355636 B CN105355636 B CN 105355636B CN 201510511908 A CN201510511908 A CN 201510511908A CN 105355636 B CN105355636 B CN 105355636B
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Abstract
The present invention discloses a kind of manufacturing method of semiconductor image sensor part, and straight hole of the blind hole by bowl-shape hole and positioned at bowl-shape hole bottom forms, and the blind hole is obtained by following technique；Bowl-shape hole is formed by etching machine first time isotropic dry etch, first time isotropic dry etch technological parameter is：It is 800sccm, coil power 3000W, radio-frequency bias voltage 0W, etch period 180s that chamber, which presses 90mTorr, SF6 flow,；The first anisotropic etching and the second anisotropic etching are used by the micro- DSE200C deep silicon etch machines in north alternately, and to be formed down straight hole in the bottom in bowl-shape hole, the first anisotropic etching and the second anisotropic etching alternate frequency are 45 ~ 55 times.The present invention reduces structural stress, improves the stability of yield and electrical property, shortens process cycle；Chip size smaller when wafer being made to manufacture, chip package size can be substantially reduced, and have smaller depth-to-width ratio.
Description
Technical field
The present invention relates to a kind of manufacturing methods of semiconductor image sensor part, belong to technical field of semiconductor encapsulation.
Background technology
Imaging sensor has been widely used in the digital device of digital camera, camera phone etc..Image passes
Sensor module may include the imaging sensor for image information to be converted to power information.In particular, imaging sensor can wrap
Electronics can be converted photons to show and store the semiconductor devices of image by including.The example of imaging sensor includes charge coupling
Clutch part（CCD）, complementary metal oxide silicon（CMOS）Imaging sensor（CIS）Deng.
Blind hole is a kind of state-of-the-art technology realized and interconnected between chip in imaging sensor.It is primarily characterized in that, it can be with
It realizes between chip and chip, between wafer and wafer or the line conduction of wafer and chip asked.With with wire bonding side
Traditional Integrated Circuit that formula connects each chip（IC）Packaged type is compared, and is with silicon hole technology
Main three-dimension packaging mode has the advantage that：Firstly, since not using wire bonding, wiring distance is shorter, and integrated level is more
Height, faster to signal transmission, power consumption is lower；Secondly, volume smaller, weight is lighter, under same package area, can integrate more
More functions；Finally, process costs are greatly reduced, and are suitble to produce in enormous quantities.
The two step photoresist mask that have been formed by of more inclination angle type TSV structures make after existing conventional bonding, with specific reference to
Shown in Fig. 1, include the following steps：
Step S1, with reference to figure 2（a）, first time mask is formed on 1 surface of wafer；
Step S2, with reference to figure 2（b）, etching groove is formed in crystal column surface, rear acetone removes mask；
Step S3, with reference to figure 2（c）, second of mask is formed in etching rooved face；
Step S4, with reference to figure 2（d）, etched hole is formed in etching rooved face, rear acetone removes mask；
Step S5, with reference to figure 2（e）, insulating layer is formed in through-hole and crystal column surface；
Step S6, with reference to figure 2（f）, conductive metal pad is exposed using the method for laser boring；
Step S7, with reference to figure 2（g）, first use metal sputtering（PVD）Method in through-hole and crystal column surface splash-proofing sputtering metal
Titanium（Thickness is about 0.13 ~ 0.17um）And metallic copper（Thickness is about 0.9 ~ 1.1um）And electric plating method is in wafer and TSV
Surface forms conductive metal coating.
Although the prior art realizes the sequencing of TSV making, but process described above uses two step photoresist mask
Method, it is long that TSV makes circuit, period, cannot effectively save production cost；Such as following disadvantage：1, before and after two step photoetching
Photoetching deviation twice is inevitable；2, TSV techniques as described above PAD spacing during wafer manufacturing is larger generally exists
The size for the single chip that 200um or so is produced in this way is larger, cannot preferably embody integrated micro.
Invention content
It is an object of the present invention to provide a kind of manufacturing method of semiconductor image sensor part, the semiconductor image sensor parts
Manufacturing method reduce structural stress, improve the stability of yield and electrical property, shorten process cycle；When wafer being made to manufacture
Chip size smaller, chip package size can be substantially reduced, and had smaller depth-to-width ratio, reduced technology difficulty.
In order to achieve the above objectives, the technical solution adopted by the present invention is：A kind of manufacturer of semiconductor image sensor part
Method, the semiconductor image sensor part include image sensor chip, transparent cover plate, and the upper surface of this image sensor chip has
Photosensitive area has support cofferdam in transparency cover between the transparent cover plate edge and the top surface edge of image sensor chip
Cavity is formed between plate and image sensor chip, is bonded by glue layer between this support cofferdam and image sensor chip, image
The edge area distribution of sensing chip lower surface has several blind holes, described image sensing chip lower surface and blind hole side table
There is passivation layer, this blind via bottom to have the pin pad of image sensor chip, the passivation layer and image sensor chip phase in face
There is metallic conductive pattern layer, a soldermask layer to be located at the metallic conductive pattern layer surface opposite with passivation layer on the surface of the back of the body, this is anti-
Several through-holes are provided on layer, a soldered ball is electrically connected by the through-hole with metallic conductive pattern layer, the support cofferdam by
First support cofferdam layer of mounted on top and the second support cofferdam layer composition, this first support cofferdam layer are contacted with transparent cover plate,
This second support cofferdam layer is contacted with image sensor chip；
Straight hole of the blind hole by bowl-shape hole and positioned at bowl-shape hole bottom forms, and the blind hole is obtained by following technique,
Include the following steps：
Step 1: making one by way of photoetching development as mask layer in 1 lower surface of described image sensing chip
Photoresist layer；
Step 2: bowl-shape hole is formed by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, the
One time isotropic dry etch technological parameter is：Chamber pressure 90mTorr, SF6 flow is 800sccm, coil power 3000W, penetrates
Frequency bias voltage 0W, etch period 180s；
Step 3: using the first anisotropic etching and the second anisotropy by the micro- DSE200C deep silicon etch machines in north
Etching alternately, to be formed down straight hole in the bottom in bowl-shape hole, carve by the first anisotropic etching and the second anisotropy
It is 45 ~ 55 times to lose alternate frequency, and the first anisotropic etch process parameter is：Chamber pressure 20mTorr, C4F8 flow be
200sccm, coil power 2000W, radio-frequency bias voltage 0W, etch period 2s, the second anisotropic etch process parameter
For：It is 350sccm, coil power 2500W, 23 W of radio-frequency bias voltage, etch period 5.5s that chamber, which presses 35mTorr, SF6 flow,；
Step 4: removing the photoresist layer as mask layer using acetone；
Step 5: the chamfering that twice etching generates before second of isotropic dry etch removal, first time isotropism
Dry etch process parameter is：It is 800sccm, O that chamber, which presses 50mTorr, SF6 flow,2Flow be 50sccm, coil power 4000W,
50 W of radio-frequency bias voltage, etch period 120s；
Step 6: forming the passivation layer in the side surface in bowl-shape hole and straight hole；
Step 7: exposing the pin pad positioned at bottom by laser boring, and drawn by the realization of metallic conductive pattern layer
Electrical contact connection between foot and pin pad.
Further improved scheme is as follows in above-mentioned technical proposal：
1. in said program, support cofferdam thickness is 20 ~ 50 microns.
2. in said program, support cofferdam width is 200 ~ 300 microns, a diameter of 5 ~ 10 microns of the shrinkage pool.
3. in said program, the upper opening in bowl-shape hole is 120 ~ 130 μm in the blind hole, under shed is 62 ~ 68 μm, hole
Depth is 40 ~ 45 microns.
4. in said program, the upper opening of straight hole is 55 ~ 60 μm in the blind hole, and under shed is 45 ~ 50 μm, and hole depth is
34 ~ 36 microns.
5. in said program, the passivation layer process is that spin coating, spraying, roller coating, silk-screen printing, slot coated, ink-jet are beaten
One kind in print, rolling, vacuum pressing-combining.
6. in said program, the anti-welding layer material is in benzocyclobutene, polyimides, photosensitive type epoxy resin
It is a kind of.
Since above-mentioned technical proposal is used, the present invention has following advantages and effect compared with prior art：
1. the manufacturing method of semiconductor image sensor part of the present invention makes inclination angle type TSV works relative to two step mask
Skill, the present invention make the specific Y shape TSV structure formed by bowl-shape hole and straight hole using a step mask, can effectively shorten technique
Flow reduces production cost, reduces structural stress, can also be by more by the specific Y shape TSV structure that bowl-shape hole and straight hole are formed
Step dry etching obtains；Photoetching deviation problem caused by the present invention photoetching natural screening Twi-lithography, is improved
The stability of yield and electrical property；Photoetching improves production efficiency, shortens process cycle；Bowl-shape hole is formed with straight hole
The TSV through hole made compared to two step mask of blind hole crystal column surface silicon is etched less generation stress it is less.
2. the manufacturing method of semiconductor image sensor part of the present invention, one step etching formed by bowl-shape hole and straight hole
The specific Y shape TSV silicon holes formed etch the Y type holes to be formed compared to multistep the depth-to-width ratio of bigger, when so that wafer is manufactured in this way
Chip size smaller, chip package size can be substantially reduced；And being formed by bowl-shape hole and straight hole of being formed of such step etching
Specific Y shape TSV silicon holes have smaller depth-to-width ratio compared to straight hole TSV, reduce technology difficulty, are advantageously implemented industrialization.
Description of the drawings
Attached drawing 1 is existing blind hole forming method flow diagram one；
Attached drawing 2a ~ g is existing blind hole forming method flow diagram two；
Attached drawing 3 is the manufacturing method structural schematic diagram of semiconductor image sensor part of the present invention；
Attached drawing 4 is the process flow chart one of blind hole in wafer level image sensing module of the present invention；
Attached drawing 5a ~ h is the process flow chart two of blind hole in wafer level image sensing module of the present invention.
In the figures above：1, image sensor chip；2, transparent cover plate；3, photosensitive area；4, cofferdam is supported；41, the first support
Cofferdam layer；42, the second support cofferdam layer；5, glue layer；6, blind hole；61, bowl-shape hole；62, straight hole；7, passivation layer；8, pin welds
Disk；9, metallic conductive pattern layer；10, soldermask layer；11, through-hole；12, soldered ball；13, cavity.
Specific implementation mode
With reference to embodiment, the invention will be further described：
Embodiment：A kind of manufacturing method of semiconductor image sensor part, the semiconductor image sensor part include figure
As sensing chip 1, transparent cover plate 2, the upper surface of this image sensor chip 1 has a photosensitive area 3,2 edge of the transparent cover plate and
Have support cofferdam 4 between transparent cover plate 2 and image sensor chip 1 between the top surface edge of image sensor chip 1
Cavity 13 is formed, is bonded by glue layer 5 between this support cofferdam 4 and image sensor chip 1,1 lower surface of image sensor chip
Edge area distribution have several blind holes 6,1 lower surface of described image sensing chip and 6 side surface of blind hole have passivation
Layer 7, this 6 bottom of blind hole have the pin pad 8 of image sensor chip 1, the passivation layer 7 opposite with image sensor chip 1
There is metallic conductive pattern layer 9, a soldermask layer 10 to be located at the surface opposite with passivation layer 7 of metallic conductive pattern layer 9 on surface, this is anti-
Several through-holes 11 are provided on layer 10, a soldered ball 12 is electrically connected by the through-hole 11 with metallic conductive pattern layer 9, the branch
Support cofferdam 4 supports cofferdam layer 42 to form by the first support cofferdam layer 41 and second of mounted on top, this first support cofferdam layer 41
It is contacted with transparent cover plate 2, this second support cofferdam layer 42 is contacted with image sensor chip 1.
Straight hole 62 of the blind hole 6 by bowl-shape hole 61 and positioned at 61 bottom of bowl-shape hole forms, and the blind hole 6 passes through following work
Skill obtains, and includes the following steps：
Step 1: making one by way of photoetching development as mask layer in 1 lower surface of described image sensing chip
Photoresist layer；
Step 2: bowl-shape hole is formed by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, the
One time isotropic dry etch technological parameter is：Chamber pressure 90mTorr, SF6 flow is 800sccm, coil power 3000W, penetrates
Frequency bias voltage 0W, etch period 180s；
Step 3: using the first anisotropic etching and the second anisotropy by the micro- DSE200C deep silicon etch machines in north
Etching alternately, to be formed down straight hole in the bottom in bowl-shape hole, carve by the first anisotropic etching and the second anisotropy
It is 50 times to lose alternate frequency, and the first anisotropic etch process parameter is：Chamber pressure 20mTorr, C4F8 flow be
200sccm, coil power 2000W, radio-frequency bias voltage 0W, etch period 2s, the second anisotropic etch process parameter
For：It is 350sccm, coil power 2500W, 23 W of radio-frequency bias voltage, etch period 5.5s that chamber, which presses 35mTorr, SF6 flow,；
Step 4: removing the photoresist layer as mask layer using acetone；
Step 5: the chamfering that twice etching generates before second of isotropic dry etch removal, first time isotropism
Dry etch process parameter is：It is 800sccm, O that chamber, which presses 50mTorr, SF6 flow,2Flow be 50sccm, coil power 4000W,
50 W of radio-frequency bias voltage, etch period 120s；
Step 6: forming the passivation layer 7 in the side surface in bowl-shape hole 61 and straight hole 62；
Step 7: exposing the pin pad 8 positioned at bottom by laser boring, and realized by metallic conductive pattern layer 9
Electrical contact connection between pin and pin pad 8.
In above-mentioned blind hole 6 the upper opening in bowl-shape hole 61 be 120 either 125 μm of under sheds be 64 or 66 μm, hole depth 42
Or 45 microns.
In above-mentioned blind hole 6 the upper opening of straight hole 62 be 56 either 58 μm of under sheds be 46 either 50 μm of hole depths be 34 or
36 microns.
Either 35 microns or 45 microns of 20 microns of 4 thickness of above-mentioned support cofferdam.
Above-mentioned 4 width of support cofferdam be 220 microns either 260 microns or 300 microns, a diameter of the 6 of the shrinkage pool 16
Either 8 microns or 10 microns of micron.
7 technique of above-mentioned passivation layer is spin coating, spraying, roller coating, silk-screen printing, slot coated, inkjet printing, rolling, vacuum
One kind in pressing.10 material of above-mentioned soldermask layer is benzocyclobutene.
When using above-mentioned semiconductor device wafer level packaging structure, inclination angle type TSV techniques are made relative to two step mask,
The present invention makes the specific Y shape TSV structure formed by bowl-shape hole and straight hole using a step mask, can effectively shorten technique stream
Journey reduces production cost, reduces structural stress, can also pass through multistep by the specific Y shape TSV structure that bowl-shape hole and straight hole are formed
Dry etching obtains；Photoetching deviation problem caused by the present invention photoetching natural screening Twi-lithography, improves
The stability of yield and electrical property；Photoetching improves production efficiency, shortens process cycle；Bowl-shape hole is formed with straight hole
The stress that blind hole etches crystal column surface silicon compared to the TSV through hole that two step mask make less generation is less；Again, one step erosion
Carve formed with the specific Y shape TSV silicon holes that straight hole is formed compare multistep by bowl-shape hole and etch the Y type holes formed and have the depth of bigger
Wide ratio, chip size smaller when making wafer manufacture in this way, chip package size can be substantially reduced；And such step etching formation
Comparing straight hole TSV with the specific Y shape TSV silicon holes that straight hole is formed by bowl-shape hole has smaller depth-to-width ratio, reduces technology difficulty,
It is advantageously implemented industrialization.
The above embodiments merely illustrate the technical concept and features of the present invention, and its object is to allow person skilled in the art
Scholar cans understand the content of the present invention and implement it accordingly, and it is not intended to limit the scope of the present invention.It is all according to the present invention
Equivalent change or modification made by Spirit Essence, should be covered by the protection scope of the present invention.
Claims (3)
1. a kind of manufacturing method of semiconductor image sensor part, it is characterised in that：The semiconductor image sensor part includes
Image sensor chip（1）, transparent cover plate（2）, this image sensor chip（1）Upper surface have photosensitive area（3）, the transparency cover
Plate（2）Edge and image sensor chip（1）Top surface edge between have support cofferdam（4）To in transparent cover plate（2）With
Image sensor chip（1）Between form cavity（13）, this support cofferdam（4）With image sensor chip（1）Between pass through glue layer
（5）Bonding, image sensor chip（1）The edge area distribution of lower surface has several blind holes（6）, described image sensing core
Piece（1）Lower surface and blind hole（6）Side surface has passivation layer（7）, this blind hole（6）Bottom has image sensor chip（1）Draw
Foot pad（8）, the passivation layer（7）With image sensor chip（1）Opposite surface has metallic conductive pattern layer（9）, one is anti-
Layer（10）Positioned at metallic conductive pattern layer（9）With passivation layer（7）Opposite surface, this soldermask layer（10）On to be provided with several logical
Hole（11）, a soldered ball（12）Pass through the through-hole（11）With metallic conductive pattern layer（9）Electrical connection, the support cofferdam（4）By
First support cofferdam layer of mounted on top（41）With the second support cofferdam layer（42）Composition, this first support cofferdam layer（41）With it is saturating
Bright cover board（2）Contact, this second support cofferdam layer（42）With image sensor chip（1）Contact；
The blind hole（6）By bowl-shape hole（61）With positioned at bowl-shape hole（61）The straight hole of bottom（62）Composition, the blind hole（6）Pass through
Following technique obtains, and includes the following steps：
Step 1: in described image sensing chip（1）Lower surface makes the light as mask layer by way of photoetching development
Photoresist layer；
Step 2: forming bowl-shape hole by the micro- DSE200C deep silicon etch machine first time isotropic dry etch in north, for the first time
Isotropic dry etch technological parameter is：Chamber presses 90mTorr, SF6 flow inclined for 800sccm, coil power 3000W, radio frequency
Set voltage 0W, etch period 180s；
Step 3: using the first anisotropic etching and the second anisotropic etching by the micro- DSE200C deep silicon etch machines in north
Alternately, to be formed down straight hole in the bottom in bowl-shape hole, the first anisotropic etching and the second anisotropic etching are handed over
It it is 45 ~ 55 times for number, the first anisotropic etch process parameter is：Chamber press 20mTorr, C4F8 flow be 200sccm,
Coil power 2000W, radio-frequency bias voltage 0W, etch period 2s, the second anisotropic etch process parameter are：Chamber pressure
35mTorr, SF6 flow are 350sccm, coil power 2500W, 23 W of radio-frequency bias voltage, etch period 5.5s；
Step 4: removing the photoresist layer as mask layer using acetone；
Step 5: the chamfering that twice etching generates before second of isotropic dry etch removal, first time isotropism dry method
Etch process parameters are：It is 800sccm, O that chamber, which presses 50mTorr, SF6 flow,2Flow is 50sccm, coil power 4000W, radio frequency
50 W of bias voltage, etch period 120s；
Step 6: in bowl-shape hole（61）And straight hole（62）Side surface form the passivation layer（7）；
Step 7: exposing the pin pad positioned at bottom by laser boring（8）, and pass through metallic conductive pattern layer（9）It realizes
Pin and pin pad（8）Between electrical contact connection.
2. the manufacturing method of semiconductor image sensor part according to claim 1, it is characterised in that：The passivation layer
（7）Technique is one kind in spin coating, spraying, roller coating, silk-screen printing, slot coated, inkjet printing, rolling, vacuum pressing-combining.
3. the manufacturing method of semiconductor image sensor part according to claim 1, it is characterised in that：The soldermask layer
（10）Material is one kind in benzocyclobutene, polyimides, photosensitive type epoxy resin.
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| CN105355636B true CN105355636B (en) | 2018-10-09 |
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| CN107276249A (en) * | 2017-06-12 | 2017-10-20 | 浙江大学 | A kind of magnet coupled resonant type wireless electric energy transmits bowl-shape primary coil |
| JP2019196511A (en) * | 2018-05-08 | 2019-11-14 | 住友重機械工業株式会社 | Plate processor and plate processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102544040A (en) * | 2012-01-17 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Method utilizing TSV (Through-Silicon-Via) to realize wafer level package of GaAs (gallium arsenide) image sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102544040A (en) * | 2012-01-17 | 2012-07-04 | 中国科学院上海微系统与信息技术研究所 | Method utilizing TSV (Through-Silicon-Via) to realize wafer level package of GaAs (gallium arsenide) image sensor |
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Address after: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee after: Suzhou Keyang Semiconductor Co., Ltd Address before: 215143, No. 568, Fang Qiao Road, Lake Industrial Park, Xiangcheng Economic Development Zone, Jiangsu, Suzhou Patentee before: SUZHOU KEYANG PHOTOELECTRIC TECHNOLOGY CO., LTD. |
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