CN105405817B - 一种陶封轴向二极管的制造方法 - Google Patents

一种陶封轴向二极管的制造方法 Download PDF

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CN105405817B
CN105405817B CN201511007946.1A CN201511007946A CN105405817B CN 105405817 B CN105405817 B CN 105405817B CN 201511007946 A CN201511007946 A CN 201511007946A CN 105405817 B CN105405817 B CN 105405817B
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李志福
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CHAOYANG RADIO COMPONENTS Co Ltd
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    • H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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Abstract

本发明公开了一种陶封轴向二极管设计与制造技术，包括无氧铜引线(1)、柯伐金属上盖(6)、陶瓷管壳(7)、柯伐金属上盖(6)焊接在陶瓷管壳(7)上为一体、内芯(8)；内芯(8)由无氧铜引线(1)、端头焊片(2)、铜热沉(3)、GPP芯片(4)、主焊片(5)和带无氧铜引线(1)的底座(10)组成；其制造过程主要分三步：第一步：带无氧铜引线的底座(10)和内芯一起进行叠焊烧结和涂硅凝胶(9)；第二步：柯伐金属上盖(6)与陶瓷管壳(7)之间进行激光缝焊；第三步：储能焊接方式密封柯伐金属上盖(6)的引线孔。采用本发明设计和制造的二极管具有体积小，质量轻，可靠性高等优点，可以广泛应用于各种环境和质量等级要求。

Description

一种陶封轴向二极管的制造方法
技术领域
本发明涉及一种电子元件的设计与制造技术，具体地说，涉及一种陶封轴向二极管的制造方法。
背景技术
目前，在现代传统轴向封装二极管及硅堆，大量采用塑料封装。但由于塑封器件的非密封性，一些高等级应用和严酷环境使用条件下，塑封器件容易发生失效，因而禁止使用。近几年，随着国内半导体材料的开发以及生产技术的创新突飞猛进，各种各样的新型二极管走向市场，特别是采用复杂的封装工艺，制成陶瓷封装二极管，既解决了管腔内气密性问题，又解决了水汽含量问题，且具有体积小，质量轻，可靠性高等优点，可以广泛应用于各种环境和质量等级要求。
发明内容
本发明正是为了解决上述技术问题而设计的一种陶封轴向二极管制造技术。
本发明解决其技术问题所采用的技术方案是：
一种陶封轴向二极管设计与制造技术，包括柯伐金属上盖、陶瓷管壳和内芯；内芯置于陶瓷管壳内，陶瓷管壳两端覆盖柯伐金属上盖，柯伐金属上盖焊接在陶瓷管壳上，无氧铜引线穿过柯伐金属上盖上的引线孔；内芯由无氧铜引线、端头焊片、铜热沉、GPP芯片、主焊片和带无氧铜引线的底座组成；GPP芯片两面Ti-Ni-Ag金属化，4片铜热沉和3片GPP芯片交替叠放，通过主焊片和底座焊接在一起，无氧铜引线穿过端头焊片和铜热沉与GPP芯片连接；其制造过程主要分以下三步：
第一步：内芯的烧结和涂胶
将GPP芯片、主焊片和铜热沉逐一放入自制模具中进行叠焊烧结，控制烧结温度为420℃至440℃，烧结时间75min至100min，烧结完成后进行外观检查和测试，合格内芯均匀涂硅凝胶，涂硅凝胶之后的内芯最大直径除底座外要求不能大于陶瓷管壳内径；
第二步：激光缝焊
将涂胶合格的内芯插入到陶瓷管壳中，无氧铜引线穿过柯伐金属上盖的引线孔，柯伐金属上盖与端头焊片互相对准，保持同轴度，开始激光缝焊，实现柯伐金属上盖与陶瓷管壳之间的环形金属封口的熔焊缝接；
第三步：储能焊
封装合格的陶瓷二极管放到储能焊机中，调试好设备即可开始储能焊，采用储能焊接方式密封柯伐金属上盖的引线孔，既解决了管腔内气密性问题，又解决了水汽含量问题。
本发明的有益效果是采用本发明设计和制造的二极管具有体积小，质量轻，可靠性高等优点，可以广泛应用于各种环境和质量等级要求。并且该产品的封装外形、尺寸均与轴向塑封产品相当，用户使用无需改变电装工艺，可以广泛应用于各种环境和质量等级要求。
附图说明
图1为本发明封装前陶瓷管壳内芯结构示意图。
图2为本发明一种陶封轴向二极管结构示意图。
具体实施方式
下面结合附图和实施例对本发明进一步说明。
如图1和2所示，本发明一种陶封轴向二极管设计与制造技术，包括柯伐金属上盖6、陶瓷管壳7和内芯8；内芯8置于陶瓷管壳7内，陶瓷管壳7两端覆盖柯伐金属上盖6，柯伐金属上盖6焊接在陶瓷管壳7上，无氧铜引线1穿过柯伐金属上盖6上的引线孔；内芯8由无氧铜引线1、端头焊片2、铜热沉3、GPP芯片4 、主焊片5 和带无氧铜引线1的底座10组成；GPP芯片4两面Ti-Ni-Ag金属化，4片铜热沉3和3片GPP芯片4交替叠放，通过主焊片5和底座10焊接在一起，无氧铜引线1穿过端头焊片2和铜热沉3与GPP芯片4连接；其制造过程主要分以下三步：
第一步：内芯的烧结和涂胶
将GPP芯片4、主焊片5和铜热沉3逐一放入自制模具中进行叠焊烧结，控制烧结温度为420℃至440℃，烧结时间75min至100min，烧结完成后进行外观检查和测试，合格内芯8均匀涂硅凝胶9，涂硅凝胶之后的内芯最大直径除底座外要求不能大于陶瓷管壳7内径；
第二步：激光缝焊
将涂胶合格的内芯8插入到陶瓷管壳7中，无氧铜引线1穿过柯伐金属上盖6的引线孔，柯伐金属上盖6与端头焊片2互相对准，保持同轴度，开始激光缝焊，柯伐金属上盖6与陶瓷管壳7之间的环形金属封口的熔焊缝接；
第三步：储能焊
封装合格的陶瓷二极管放到储能焊机中，调试好设备即可开始储能焊，采用储能焊接方式密封柯伐金属上盖6的引线孔，既解决了管腔内气密性问题，又解决了水汽含量问题。
本发明不局限于上述最佳实施方式，任何人在本发明的启示下得出的其他任何与本发明相同或相近似的产品，均落在本发明的保护范围之内。

Claims (1)

1.一种陶封轴向二极管的制造方法，包括柯伐金属上盖(6)、陶瓷管壳(7)和内芯(8)；其特征在于：内芯(8)置于陶瓷管壳(7)内，陶瓷管壳(7)两端覆盖柯伐金属上盖(6)，柯伐金属上盖(6)焊接在陶瓷管壳(7)上，无氧铜引线(1)穿过柯伐金属上盖(6)上的引线孔；内芯(9)由无氧铜引线(1)、端头焊片(2)、铜热沉(3)、GPP芯片(4) 、主焊片(5) 和带无氧铜引线(1)的底座(10)组成；GPP芯片(4)两面Ti-Ni-Ag金属化，4片铜热沉(3)和3片GPP芯片(4)交替叠放，通过主焊片(5)和底座(10)焊接在一起，无氧铜引线(1)穿过端头焊片(2)和铜热沉(3)与GPP芯片(4)连接；其制造过程主要分以下三步：
第一步：内芯的烧结和涂胶
将GPP芯片(4)、主焊片(5)和铜热沉(3)逐一放入自制模具中进行叠焊烧结，控制烧结温度为420℃至440℃，烧结时间75min至100min，烧结完成后进行外观检查和测试，合格内芯(8)均匀涂硅凝胶(9)，涂硅凝胶之后的内芯最大直径除底座外要求不能大于陶瓷管壳(7)内径；
第二步：激光缝焊
将涂胶合格的内芯(8)插入到陶瓷管壳(7)中，无氧铜引线(1)穿过柯伐金属上盖(6)的引线孔，柯伐金属上盖(6)与端头焊片(2)互相对准，保持同轴度，开始激光缝焊，柯伐金属上盖(6)与陶瓷管壳(7)之间的环形金属封口的熔焊缝接；
第三步：储能焊
封装合格的陶瓷二极管放到储能焊机中，调试好设备即可开始储能焊，采用储能焊接方式密封柯伐金属上盖(6)的引线孔。
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CN2201727Y (zh) * 1994-04-07 1995-06-21 东南大学 陶瓷封装半导体抗电涌器件
US6894382B1 (en) * 2004-01-08 2005-05-17 International Business Machines Corporation Optimized electronic package
CN201134425Y (zh) * 2007-11-26 2008-10-15 沈首良 圆柱体瓷封二极管
CN202196774U (zh) * 2011-08-02 2012-04-18 山东沂光电子股份有限公司 带金属垫片焊接的塑封功率二极管
CN204045599U (zh) * 2014-09-04 2014-12-24 山东沂光电子股份有限公司 一种双芯片高反压塑封功率二极管

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