CN105403528A - 石墨烯等离激元增强红外光谱探测的电学原位扣背景方法 - Google Patents
石墨烯等离激元增强红外光谱探测的电学原位扣背景方法 Download PDFInfo
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- CN105403528A CN105403528A CN201510789847.7A CN201510789847A CN105403528A CN 105403528 A CN105403528 A CN 105403528A CN 201510789847 A CN201510789847 A CN 201510789847A CN 105403528 A CN105403528 A CN 105403528A
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- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108254353A (zh) * | 2017-12-29 | 2018-07-06 | 重庆大学 | 石墨烯金属共形纳米探针增强拉曼红外双光谱器件及制备方法 |
CN108389930A (zh) * | 2018-02-05 | 2018-08-10 | 国家纳米科学中心 | 一种柔性石墨烯等离激元器件及其制备方法 |
CN109446727A (zh) * | 2018-11-30 | 2019-03-08 | 电子科技大学 | 石墨烯表面等离激元的粒子模拟仿真方法 |
CN111952385A (zh) * | 2020-08-21 | 2020-11-17 | 中国科学院长春光学精密机械与物理研究所 | 一种二维材料极化激元与异质结结合的红外光探测器 |
US11092546B2 (en) | 2017-12-22 | 2021-08-17 | Samsung Electronics Co., Ltd. | Spectrometer utilizing surface plasmon |
CN114097061A (zh) * | 2019-06-06 | 2022-02-25 | 科磊股份有限公司 | 宽带紫外线照明源 |
CN114486802A (zh) * | 2022-02-10 | 2022-05-13 | 国家纳米科学中心 | 一种探测水溶液中蛋白质二级结构的等离激元增强红外光谱传感器及其制备方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013063008A1 (en) * | 2011-10-24 | 2013-05-02 | University Of Washington Through Its Center For Commercialization | Polypeptides and their use |
CN103493203A (zh) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | 晶体管器件以及用于制造晶体管器件的材料 |
CN103776790A (zh) * | 2014-02-25 | 2014-05-07 | 重庆大学 | 一种基于石墨烯纳米天线的红外光谱增强及探测方法及装置 |
WO2014176524A2 (en) * | 2013-04-25 | 2014-10-30 | The Trustees Of The University Of Pennsylvania | Opioid detection based on high quality graphene transistor arrays and a synthetic mu receptor |
CN104659144A (zh) * | 2015-02-11 | 2015-05-27 | 西北工业大学 | 基于纳米条带结构的石墨烯可调红外高效率吸收装置及方法 |
CN104851929A (zh) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | 基于石墨烯表面等离激元的光电材料可调吸收增强层 |
-
2015
- 2015-11-17 CN CN201510789847.7A patent/CN105403528B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103493203A (zh) * | 2011-03-22 | 2014-01-01 | 曼彻斯特大学 | 晶体管器件以及用于制造晶体管器件的材料 |
WO2013063008A1 (en) * | 2011-10-24 | 2013-05-02 | University Of Washington Through Its Center For Commercialization | Polypeptides and their use |
WO2014176524A2 (en) * | 2013-04-25 | 2014-10-30 | The Trustees Of The University Of Pennsylvania | Opioid detection based on high quality graphene transistor arrays and a synthetic mu receptor |
CN103776790A (zh) * | 2014-02-25 | 2014-05-07 | 重庆大学 | 一种基于石墨烯纳米天线的红外光谱增强及探测方法及装置 |
CN104659144A (zh) * | 2015-02-11 | 2015-05-27 | 西北工业大学 | 基于纳米条带结构的石墨烯可调红外高效率吸收装置及方法 |
CN104851929A (zh) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | 基于石墨烯表面等离激元的光电材料可调吸收增强层 |
Non-Patent Citations (6)
Title |
---|
《NANO LETT.》 * |
《SCIENCE》 * |
《SMALL》 * |
DANIEL RODRIGO等: "Mid-infrared plasmonic biosensing with graphene", 《SCIENCE》 * |
LONG JU等: "Graphene plasmonics for tunable terahertz metamaterials", 《NATURE NANOTECHNOLOGY》 * |
XIAOXIA YANG 等: "Substrate Phonon-Mediated Plasmon Hybridization in Coplanar Graphene Nanostructures for Broadband Plasmonic Circuits", 《SMALL》 * |
Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11092546B2 (en) | 2017-12-22 | 2021-08-17 | Samsung Electronics Co., Ltd. | Spectrometer utilizing surface plasmon |
CN108254353A (zh) * | 2017-12-29 | 2018-07-06 | 重庆大学 | 石墨烯金属共形纳米探针增强拉曼红外双光谱器件及制备方法 |
CN108254353B (zh) * | 2017-12-29 | 2019-04-16 | 重庆大学 | 石墨烯金属共形纳米探针增强拉曼红外双光谱器件及制备方法 |
CN108389930A (zh) * | 2018-02-05 | 2018-08-10 | 国家纳米科学中心 | 一种柔性石墨烯等离激元器件及其制备方法 |
CN108389930B (zh) * | 2018-02-05 | 2020-07-31 | 国家纳米科学中心 | 一种柔性石墨烯等离激元器件及其制备方法 |
CN109446727A (zh) * | 2018-11-30 | 2019-03-08 | 电子科技大学 | 石墨烯表面等离激元的粒子模拟仿真方法 |
CN109446727B (zh) * | 2018-11-30 | 2022-07-29 | 电子科技大学 | 石墨烯表面等离激元的粒子模拟仿真方法 |
CN114097061A (zh) * | 2019-06-06 | 2022-02-25 | 科磊股份有限公司 | 宽带紫外线照明源 |
CN114097061B (zh) * | 2019-06-06 | 2023-07-14 | 科磊股份有限公司 | 宽带紫外线照明源 |
CN111952385A (zh) * | 2020-08-21 | 2020-11-17 | 中国科学院长春光学精密机械与物理研究所 | 一种二维材料极化激元与异质结结合的红外光探测器 |
CN111952385B (zh) * | 2020-08-21 | 2022-08-02 | 中国科学院长春光学精密机械与物理研究所 | 一种二维材料极化激元与异质结结合的红外光探测器 |
CN114486802A (zh) * | 2022-02-10 | 2022-05-13 | 国家纳米科学中心 | 一种探测水溶液中蛋白质二级结构的等离激元增强红外光谱传感器及其制备方法 |
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