CN105400989A

CN105400989A - Electronic alloy material containing rare earth elements

Info

Publication number: CN105400989A
Application number: CN201510774639.XA
Authority: CN
Inventors: 符建豪
Original assignee: Taicang Rongzhong Electrical And Mechanical Technology Co Ltd
Current assignee: Taicang Rongzhong Electrical And Mechanical Technology Co Ltd
Priority date: 2015-11-13
Filing date: 2015-11-13
Publication date: 2016-03-16

Abstract

The invention provides an electronic alloy material containing rare earth elements. The electronic alloy material containing the rare earth elements comprises, by weight, 0.5-8% of silicon, 0.2-5% of magnesium, 0.5-3% of tungsten, 0.8-15% of nickel, 0.05-2% of cobalt, 0.01-1% of phosphorus, 0.01-0.8% of silver, 0.02-0.3% of zinc, 0.08-0.6% of the rare earth elements, and the balance copper and a few impurities. The electronic alloy material has good conduction performance, improves abrasion resistance, high-temperature resistance and mechanical strength, improves fatigue resistance and is good in bending machining performance.

Description

A kind of electron material containing rare earth element

Technical field

The present invention relates to technical field of electronic materials, be specifically related to a kind of electron material containing rare earth element.

Background technology

Electronic material refers to the material used in electronic technology and microelectronics, comprises dielectric materials, semiconductor material, piezoelectricity and ferroelectric material, conducting metal and alloy material, magneticsubstance, photoelectron material, electromagnetic shielding material and other associated materials.Electronic material is the basic substance of modern electronics industry and scientific technological advance, is again technology-intensive subject in sciemtifec and technical sphere simultaneously.It relates to the multi-subject knowledges such as electronic technology, physical chemistry, solid state physics and Process ba-sis.According to the chemical property of material, metal electron material can be divided into, electronic ceramics, polymer electronics, glass dielectric, mica, gas-insulated medium material, inducer, insulating material, magneticsubstance, electronics handware, electrotechnical ceramics material, shielding material, piezoelectric crystal material, fine Electronic chemical materials, electronics gently build woven material, electronics tinsolder material, PCB make material, other electronic material.

Copper and alloy thereof, owing to having good conductive and heat-conductive, anti-corrosion, intensity, fatigue and being easy to the features such as manufacture, are widely used in fields such as electronics, electric power, machinery and space flight and aviation, become important electric and electronic material.Along with electric/electronic device is to miniaturization, lightweight development in recent years, the performance for electric and electronic material has had higher performance requriements, as the intensity, electroconductibility, bendability, proof stress slackness, wear resistance, resistance to elevated temperatures etc. that have had.But for copper alloy, high strength and high conductivity, high strength and good bendability etc. are a pair conflicting characteristics.Therefore in the urgent need to developing a kind of novel high-performance copper alloy material.

Therefore, for the problems referred to above, the present invention proposes a kind of new technical scheme.

Summary of the invention

Object of the present invention provides a kind of high connductivity, wear resistance high, the electron material containing rare earth element that high thermal resistance is strong.

The present invention is achieved through the following technical solutions:

Containing an electron material for rare earth element, comprise the chemical element composition of following weight percent:

Silicon 0.5% ~ 8%;

Magnesium 0.2% ~ 5%;

Tungsten 0.05% ~ 3%;

Nickel 0.8% ~ 15%;

Cobalt 0.05% ~ 2%;

Phosphorus 0.01% ~ 1%;

Silver 0.01% ~ 0.8%;

Zinc 0.02% ~ 0.3%;

Rare earth element 0.08% ~ 0.6%;

Surplus is copper and a small amount of impurity.

Further, a kind of electron material containing rare earth element, comprises the chemical element composition of following weight percent:

Silicon 0.6% ~ 5%;

Magnesium 0.2% ~ 3%;

Tungsten 0.05% ~ 1.5%;

Nickel 1% ~ 12%;

Cobalt 0.05% ~ 2%;

Phosphorus 0.01% ~ 0.6%;

Silver 0.01% ~ 0.1%;

Zinc 0.02% ~ 0.2%;

Rare earth element 0.08% ~ 0.35%;

Surplus is copper and a small amount of impurity.

Further, described rare earth element comprises the mixture of cerium, lanthanum.

The invention has the beneficial effects as follows: electronic material proposed by the invention has excellent conductivity, meanwhile, improves its wear resistance, high thermal resistance, and physical strength, and, improve the anti-fatigue performance of electronic material, obtain the electron material of excellent in bending workability.

Embodiment

Below in conjunction with embodiment, the present invention is described further.

Embodiment 1

Silicon 0.6%;

Magnesium 0.2%;

Tungsten 0.05%;

Nickel 1%;

Cobalt 0.05%;

Phosphorus 0.01%;

Silver 0.01%;

Zinc 0.02%;

Rare earth element 0.08%;

Surplus is copper and a small amount of impurity.

Embodiment 2

Silicon 3%;

Magnesium 1.5%;

Tungsten 0.3%;

Nickel 5%;

Cobalt 1.2%;

Phosphorus 0.25%;

Silver 0.06%;

Zinc 0.08%;

Rare earth element 0.12%;

Surplus is copper and a small amount of impurity.

Embodiment 3

Silicon 5%;

Magnesium 3%;

Tungsten 1.5%;

Nickel 12%;

Cobalt 2%;

Phosphorus 0.6%;

Silver 0.1%;

Zinc 0.2%;

Rare earth element 0.35%;

Surplus is copper and a small amount of impurity.

Electronic material proposed by the invention has excellent conductivity, meanwhile, improves its wear resistance, high thermal resistance, and physical strength, and, improve the anti-fatigue performance of electronic material, obtain the electron material of excellent in bending workability.

The above is only embodiments of the invention, is not restriction the present invention being made to any other form, and any amendment done according to embodiment proposed by the invention or equivalent variations, still belong to the present invention's scope required for protection.

Claims

1. containing an electron material for rare earth element, it is characterized in that: the chemical element composition comprising following weight percent:

Silicon 0.5% ~ 8%;

Magnesium 0.2% ~ 5%;

Tungsten 0.05% ~ 3%;

Nickel 0.8% ~ 15%;

Cobalt 0.05% ~ 2%;

Phosphorus 0.01% ~ 1%;

Silver 0.01% ~ 0.8%;

Zinc 0.02% ~ 0.3%;

Rare earth element 0.08% ~ 0.6%;

Surplus is copper and a small amount of impurity.

2. a kind of electron material containing rare earth element according to claim 1, is characterized in that: the chemical element composition comprising following weight percent:

Silicon 0.6% ~ 5%;

Magnesium 0.2% ~ 3%;

Tungsten 0.05% ~ 1.5%;

Nickel 1% ~ 12%;

Cobalt 0.05% ~ 2%;

Phosphorus 0.01% ~ 0.6%;

Silver 0.01% ~ 0.1%;

Zinc 0.02% ~ 0.2%;

Rare earth element 0.08% ~ 0.35%;

Surplus is copper and a small amount of impurity.

3. a kind of electron material containing rare earth element according to claim 1 or 2, is characterized in that: described rare earth element comprises the mixture of cerium, lanthanum.