CN105393375A - 一种金属掺杂的Ge-Sb-Te基多值存储相变材料及相变存储器 - Google Patents
一种金属掺杂的Ge-Sb-Te基多值存储相变材料及相变存储器 Download PDFInfo
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- CN105393375A CN105393375A CN201480037056.2A CN201480037056A CN105393375A CN 105393375 A CN105393375 A CN 105393375A CN 201480037056 A CN201480037056 A CN 201480037056A CN 105393375 A CN105393375 A CN 105393375A
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- 239000012782 phase change material Substances 0.000 title claims abstract description 84
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 18
- 239000002184 metal Substances 0.000 title claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 8
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 4
- 239000011232 storage material Substances 0.000 claims description 31
- 238000004544 sputter deposition Methods 0.000 claims description 19
- 230000007704 transition Effects 0.000 claims description 19
- 239000000126 substance Substances 0.000 claims description 16
- 238000000926 separation method Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 239000011261 inert gas Substances 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 230000009466 transformation Effects 0.000 claims description 6
- 238000002425 crystallisation Methods 0.000 claims description 5
- 230000008025 crystallization Effects 0.000 claims description 5
- 229910001215 Te alloy Inorganic materials 0.000 claims description 3
- 238000000231 atomic layer deposition Methods 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 238000007740 vapor deposition Methods 0.000 claims description 3
- 238000005137 deposition process Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 10
- 230000008859 change Effects 0.000 description 7
- 238000005265 energy consumption Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 238000013461 design Methods 0.000 description 5
- 230000002349 favourable effect Effects 0.000 description 5
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000009471 action Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
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- Semiconductor Memories (AREA)
Abstract
本发明提供了一种金属掺杂的Ge-Sb-Te基多值存储相变材料，通式为：Mx(GeaSbbTec)1-x,其中M为掺杂金属元素，所述M为Cu、Ag和Zn中的至少一种，x代表M的原子个数百分比，0<x<20％，所述M均匀散布在GeaSbbTec中。该相变材料在外加脉冲电压或脉冲电流下，可实现非晶高阻态，非晶低阻态，晶态低阻态的三态存储，各个状态之间区分明显且中间阻态可控性强，且获取中间阻态所需的电场较小，能耗较低，获得的中间阻态具有良好的稳定性，可重复性好。本发明实施例还提供了包含该金属掺杂的Ge-Sb-Te基多值存储相变材料的相变存储器。
Description
PCT国内申请，说明书已公开。
Claims (1)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2014/080823 WO2015196412A1 (zh) | 2014-06-26 | 2014-06-26 | 一种金属掺杂的Ge-Sb-Te基多值存储相变材料及相变存储器 |
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| Publication Number | Publication Date |
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| CN105393375A true CN105393375A (zh) | 2016-03-09 |
| CN105393375B CN105393375B (zh) | 2018-12-14 |
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| CN201480037056.2A Active CN105393375B (zh) | 2014-06-26 | 2014-06-26 | 一种金属掺杂的Ge-Sb-Te基多值存储相变材料及相变存储器 |
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| WO (1) | WO2015196412A1 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820823A (zh) * | 2020-12-31 | 2021-05-18 | 华为技术有限公司 | 多值相变存储单元、相变存储器、电子设备及制备方法 |
| CN113921707A (zh) * | 2021-09-14 | 2022-01-11 | 华中科技大学 | 一种基于异质堆叠的二位相变存储器及其阻值测量方法 |
| WO2023108749A1 (zh) * | 2021-12-15 | 2023-06-22 | 华中科技大学 | 一种Cu掺杂的Sb-Te体系相变材料、相变存储器及制备方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110718628B (zh) * | 2019-09-03 | 2022-03-08 | 华中科技大学 | 相变合金材料、相变存储器及相变合金材料的制备方法 |
| US11195999B2 (en) * | 2019-11-13 | 2021-12-07 | International Business Machines Corporation | Phase change material with reduced reset state resistance drift |
| CN114717524A (zh) * | 2022-04-02 | 2022-07-08 | 昆明贵研新材料科技有限公司 | 一种适于作久储相变存储介质的Ru-Sb-Te合金溅射靶材及其制备方法 |
| CN114892133A (zh) * | 2022-04-02 | 2022-08-12 | 昆明贵研新材料科技有限公司 | 一种用作久储相变存储介质的Ru-Sb-Te合金溅射靶材及其制备方法 |
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| CN103594621A (zh) * | 2013-11-05 | 2014-02-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种相变存储单元及其制备方法 |
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| US7888165B2 (en) * | 2008-08-14 | 2011-02-15 | Micron Technology, Inc. | Methods of forming a phase change material |
| US8891293B2 (en) * | 2011-06-23 | 2014-11-18 | Macronix International Co., Ltd. | High-endurance phase change memory devices and methods for operating the same |
| CN103346258B (zh) * | 2013-07-19 | 2015-08-26 | 中国科学院上海微系统与信息技术研究所 | 相变存储单元及其制备方法 |
-
2014
- 2014-06-26 CN CN201480037056.2A patent/CN105393375B/zh active Active
- 2014-06-26 WO PCT/CN2014/080823 patent/WO2015196412A1/zh active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1953229A (zh) * | 2006-10-31 | 2007-04-25 | 中国科学院上海微系统与信息技术研究所 | 用于相变存储器的锗钛基存储材料及其制备方法 |
| CN102064276A (zh) * | 2010-11-01 | 2011-05-18 | 华中科技大学 | 一种非对称相变存储器单元及器件 |
| CN102142517A (zh) * | 2010-12-17 | 2011-08-03 | 华中科技大学 | 一种低热导率的多层相变材料 |
| CN102820427A (zh) * | 2012-07-31 | 2012-12-12 | 宁波大学 | Zn掺杂Ge2Sb2Te5相变存储薄膜材料及其制备方法 |
| CN103594621A (zh) * | 2013-11-05 | 2014-02-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种相变存储单元及其制备方法 |
| CN103762308A (zh) * | 2014-01-09 | 2014-04-30 | 同济大学 | 多态镓锑-硒化锡多层纳米复合相变材料及其制备和应用 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112820823A (zh) * | 2020-12-31 | 2021-05-18 | 华为技术有限公司 | 多值相变存储单元、相变存储器、电子设备及制备方法 |
| CN113921707A (zh) * | 2021-09-14 | 2022-01-11 | 华中科技大学 | 一种基于异质堆叠的二位相变存储器及其阻值测量方法 |
| WO2023108749A1 (zh) * | 2021-12-15 | 2023-06-22 | 华中科技大学 | 一种Cu掺杂的Sb-Te体系相变材料、相变存储器及制备方法 |
| US11807798B2 (en) | 2021-12-15 | 2023-11-07 | Huazhong University Of Science And Technology | Cu-doped Sb-Te system phase change material, phase change memory and preparation method thereof |
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| Publication number | Publication date |
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| WO2015196412A1 (zh) | 2015-12-30 |
| CN105393375B (zh) | 2018-12-14 |
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