CN105390412A - Pressure-reducing drying device, substrate processing device and pressure-reducing drying method - Google Patents

Pressure-reducing drying device, substrate processing device and pressure-reducing drying method Download PDF

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Publication number
CN105390412A
CN105390412A CN201510436082.9A CN201510436082A CN105390412A CN 105390412 A CN105390412 A CN 105390412A CN 201510436082 A CN201510436082 A CN 201510436082A CN 105390412 A CN105390412 A CN 105390412A
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China
Prior art keywords
pressure
chamber
valve
decompression
aperture
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Granted
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CN201510436082.9A
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Chinese (zh)
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CN105390412B (en
Inventor
富藤幸雄
厨子卓哉
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Dainippon Screen Manufacturing Co Ltd
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Dainippon Screen Manufacturing Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • G03F7/168Finishing the coated layer, e.g. drying, baking, soaking
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/30Imagewise removal using liquid means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67023Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Drying Of Solid Materials (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Coating Apparatus (AREA)

Abstract

The invention provides a pressure-reducing drying device, a substrate processing device and a pressure-reducing drying method. The pressure-reducing drying device comprises a cavity accommodating a substrate, a pressure-reducing air-exhausting unit carrying out pressure-reducing air-exhausting on the inside of the cavity, a valve positioned between the cavity and the pressure-reducing air-exhausting unit which can adjust the flow of pressure-reducing and air-exhausting through an aperture of the valve, a learning unit obtaining pressure-reducing line data showing pressure changes due to pressure-reducing and air-exhausting in the cavity in accordance with the prescribed apertures of the valve, an input unit, in which target pressure values and target arriving time are input, and a control portion controlling the apertures of the valve and adjusting the apertures of the valve on the basis of pressure-reducing curve data, the input target pressure values and the target reaching time. The pressure-reducing can be carried out at a pressure-reducing speed closer to a required pressure-reducing speed.

Description

Decompression dry device, substrate board treatment and decompression drying method
Technical field
The present invention relates to the technology that a kind of substrate to being attached with treatment fluid carries out drying under reduced pressure, particularly relating to a kind of decompression dry device, substrate board treatment and decompression drying method.
Background technology
In the past, at semiconductor wafer (wafer), liquid crystal indicator glass (glass) substrate, Plasmia indicating panel (PlasmaDisplayPanel, PDP) with in glass substrate, photomask (photomask) glass substrate, colored filter (colorfilter) substrate, indicator (disc) substrate, substrate used for solar batteries, the manufacturing step of Electronic Paper (electronicpaper) with precision electronic device substrates such as substrates, in order to make the treatment fluid coating substrate dry, and use decompression dry device.This decompression dry device has: chamber (chamber), collecting substrate; And exhaust apparatus, the gas in chamber is discharged.Existing decompression dry device is such as recorded in patent documentation 1.
When the treatment fluid such as photoresist (photoresist) making to coat substrate dry to form film time, if carry out decompression sharply, have the worry of generation bumping.Bumping produces because the solvent composition coated in the photoresist of substrate surface sharply evaporates.If produce bumping in drying under reduced pressure process, the de-aeration forming vesicle on the surface of photoresist can be produced.Therefore, in drying under reduced pressure process, the stage needs not make chamber indoor pressure-reducing sharp in the early stage, and reduces pressure by stages.
[prior art document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 2006-261379 publication
Summary of the invention
[inventing problem to be solved]
In order to change the pressure in chamber by stages, need to regulate decompression rate.In the decompression dry device described in patent documentation 1, in reduced pressure treatment, the gas in chamber is discharged by one side, and one supplies inert gas (gas) in chamber, regulates thus to decompression rate.And, in order to regulate decompression rate rightly, and between the supply source and chamber of inert gas, be provided with change aperture valve (valve) with can dividing multiple stage.
In addition, as the additive method regulated the decompression rate in chamber, also can change aperture valve with can dividing multiple stage be set between chamber and exhaust apparatus.Now, the air displacement from chamber can be adjusted by stages.
No matter when the quantity delivered at adjustment inert gas and any one from the air displacement of chamber, in order to carry out reduced pressure treatment with required decompression rate, all need described valve to be set as the aperture corresponding to described decompression rate.But, even if when setting same valve opening to the decompression dry device of same type machine, also decompression rate can be made to produce deviation because of the individual difference of device or the difference etc. arranging environment.Therefore, the situation producing between required decompression rate and the decompression rate of reality and deviate from is had.
The present invention completes in light of this situation, and object is to provide a kind of technology, changes in the decompression dry device of the valve of aperture with can dividing multiple stage having, can with required decompression rate closer to decompression rate carry out reduced pressure treatment.
[technological means of dealing with problems]
In order to solve described problem, first invention of the application is a kind of decompression dry device, and carry out drying under reduced pressure to the substrate being attached with treatment fluid, described decompression dry device comprises: chamber, accommodates described substrate; Decompression exhaust unit, carries out decompression exhaust in described chamber; Valve, is situated between and is placed between described chamber and described decompression exhaust unit, utilize the aperture of valve to regulate the flow of decompression exhaust; Unit, for often kind of aperture of the regulation of described valve, obtains the decreasing pressure curve data (data) of the pressure change in the described chamber of expression caused by decompression exhaust; Input unit, is transfused to target pressure value and target reaches the time; And control part, the aperture of described valve is controlled; And described control part reaches the time based on described decreasing pressure curve data, the described target pressure value inputted and described target and regulates the aperture of described valve.
Second invention of the application is the decompression dry device according to the first invention, reaches the time to the described input unit input multiple described target pressure value of continuous print and described target.
3rd invention of the application is the decompression dry device according to the first invention, comprises multiple described valve, and described control part makes multiple described valve all carry out action with same aperture.
4th invention of the application is the decompression dry device according to the first invention, and described valve regulates aperture by the angle changing valve.
5th invention of the application is the decompression dry device according to the first invention, and described decreasing pressure curve packet contains: pressure drop portion, and the pressure in described chamber passes through in time and declines; And pressure stability portion, the pressure stability in described chamber is in the force value of regulation; And during the force value of described target pressure value lower than the script in described chamber, described control part sets the aperture of described valve with reference to described pressure drop portion, during described target pressure value is roughly the same with the force value of the script in described chamber, described control part sets the aperture of described valve with reference to described pressure stability portion.
6th invention of the application is the decompression dry device according to the first invention, comprises multiple described chamber, and described unit obtains intrinsic described decreasing pressure curve data for each of described chamber.
7th invention of the application is a kind of substrate board treatment, described substrate is carried out to coating and the development of anti-corrosion liquid, and comprises: coating part, to anti-corrosion liquid described in the described base plate coating before exposure-processed; According to the decompression dry device of arbitrary invention in the first invention to the 6th invention, drying under reduced pressure is carried out to the described substrate being attached with described anti-corrosion liquid; And development section, development treatment is carried out to the described substrate after implementing described exposure-processed.
8th invention of the application is a kind of decompression drying method, by the substrate being attached with treatment fluid to be contained in chamber and to reduce pressure in described chamber, and make described drying substrates, described decompression drying method comprises: a) learning procedure, for the often kind of aperture of regulation of valve regulating the flow be vented from described chamber depressurization, obtain the decreasing pressure curve data of the pressure change in the described chamber that represents caused by decompression exhaust; B) input step, input target pressure value and target reach the time; And c) drying under reduced pressure step, after described learning procedure and described input step, reach the time based on described decreasing pressure curve data, the described target pressure value inputted and target and regulate the aperture of described valve.
9th invention of the application is the decompression drying method according to the 8th invention, and in described input step, the described target pressure value that input continuous print is multiple and described target reach the time.
Tenth invention of the application is the decompression drying method according to the 8th invention or the 9th invention, and described decreasing pressure curve packet contains: pressure drop portion, and the pressure in described chamber passes through in time and declines; And pressure stability portion, the pressure stability in described chamber is in the force value of regulation; And in described drying under reduced pressure step, during the force value of described target pressure value lower than the script in described chamber, the aperture of described valve is set with reference to described pressure drop portion, during described target pressure value is roughly the same with the force value of the script in described chamber, set the aperture of described valve with reference to described pressure stability portion.
[effect of invention]
According to first invention of the application to the tenth invention, obtain the chamber used and the decreasing pressure curve data under environment are being set, the aperture of adjuster valve based on described decreasing pressure curve data.Therefore, no matter the individual difference of device or arrange environment, all can with required decompression rate closer to decompression rate carry out reduced pressure treatment.
Accompanying drawing explanation
Fig. 1 is the skeleton diagram of the formation of the substrate board treatment representing the first execution mode.
Fig. 2 is the skeleton diagram of the formation of the decompression dry device representing the first execution mode.
Fig. 3 is the flow chart (flowchart) of the flow process of the drying under reduced pressure process representing the first execution mode.
Fig. 4 is the figure of an example of the decreasing pressure curve data representing the first execution mode.
Fig. 5 is the figure of an example of the target reduced pressure waveform representing the first execution mode.
[explanation of symbol]
1: decompression dry device (drying under reduced pressure portion)
9: substrate board treatment
20: chamber
21: base portion
22: cap
23: exhaust outlet
24: supporting mechanism
25: pressure sensor
30: exhaust pump (decompression exhaust unit)
40: pipe arrangement portion
41: pipe arrangement separately
42: the first total pipe arrangements
43: the second total pipe arrangements
44: branch's pipe arrangement
45: valve
50: inert gas supply unit
51: inert gas supplying tubing
52: inert gas supply source
53: open and close valve
60: control part
61: arithmetic processing section
62: memory
63: storage part
70: input unit
70: input part
80: unit
90: loading unit
91: cleaning part
92: dewatering roast portion
93: coating part
94: prebake conditions portion
95: exposure portion
96: development section
97: rinse part
98: rear baking portion
99: take out of portion
221: encapsulant
241: supporting bracket
242: supporting pin
243: support column
D: decreasing pressure curve data
D1: pressure drop portion
D2: pressure stability portion
G: substrate
R: target reduced pressure waveform
ST101 ~ ST105: step
T1: first period
T2: the second phase
T3: between the third phase
T4: between the fourth phase
Embodiment
Below, faced by one side reference accompanying drawing one, embodiments of the present invention are described.
<1. the first execution mode >
<1-1. the formation > of substrate board treatment
Fig. 1 is the skeleton diagram of the formation of the substrate board treatment 9 comprising decompression dry device 1 representing the first execution mode.The substrate board treatment 9 of present embodiment is device liquid crystal indicator glass substrate G being carried out to the development after the coating of anti-corrosion liquid, exposure and exposure.Below, liquid crystal indicator glass substrate G is called substrate G.
Substrate board treatment 9 comprises loading unit 90, cleaning part 91, dewatering roast (dehydrationbake) portion 92, coating part 93, decompression dry device 1 as drying under reduced pressure portion, prebake conditions (pre-bake) portion 94, exposure portion 95, development section 96, rinses (rinse) portion 97, rear baking (postbake) portion 98 and take out of portion 99 as multiple handling part.Each handling part of substrate board treatment 9 adjoins each other with described order and configures.Substrate G utilizes transport mechanism (not shown), transports according to the sequence as the dotted line arrows according to the carrying out of process to each handling part.
The substrate G that loading unit 90 will carry out processing in substrate board treatment 9 moves in substrate board treatment 9.Cleaning part 91 cleans the substrate G moved into loading unit 90, and by removals such as the organic contamination headed by fine particle (particle) or metallic pollution, grease, natural oxide films.92 pairs, dewatering roast portion substrate G heats, and makes the cleaning fluid gasification being attached to substrate G in cleaning part 91, makes substrate G dry thus.
Coating part 93 is to the surface coating treatment fluid of the substrate G carried out in dewatering roast portion 92 after dry process.In the coating part 93 of present embodiment, to the surface coating anti-corrosion liquid of substrate G.Then, decompression dry device 1 utilizes decompression that the solvent of the described anti-corrosion liquid on the surface coating substrate G is evaporated, and makes substrate G dry.Prebake conditions portion 94 is heat treated portions, heats, and the resist composition on substrate G surface is solidified to the substrate G implement drying under reduced pressure process in decompression dry device 1 after.Thus, at film, the i.e. etchant resist of the surperficial formation processing liquid of substrate G.
Next, exposure-processed is carried out on the surface of exposure portion 95 to the substrate G being formed with etchant resist.Far ultraviolet is irradiated via describing to have the mask of circuit pattern (pattern) in exposure portion 95, and pattern is transferred to etchant resist.Substrate G after exposing patterns in exposure portion 95 impregnated in developer solution and carries out development treatment by development section 96.
Rinse part 97 utilizes flushing liquor to rinse the substrate G after development treatment in development section 96.The carrying out of development treatment is made to stop thus.98 pairs, rear baking portion substrate G heats, and makes the flushing liquor gasification being attached to substrate G in rinse part 97, makes substrate G dry thus.Substrate G implement process in each handling part of substrate board treatment 9 after is transported to the portion of taking out of 99.Then, from the portion of taking out of 99, substrate G is taken out of the outside to substrate board treatment 9.
In addition, the substrate board treatment 9 of present embodiment has exposure portion 95, but also can omit exposure portion in substrate board treatment of the present invention.Now, substrate board treatment and other exposure device are combined and use.
<1-2. the formation > of decompression dry device
Fig. 2 is the skeleton diagram of the formation of the decompression dry device 1 representing present embodiment.As mentioned above, decompression dry device 1 is the device substrate G being coated with the treatment fluids such as anti-corrosion liquid being carried out to drying under reduced pressure.As shown in Figure 2, decompression dry device 1 has chamber 20, exhaust pump (pump) 30, pipe arrangement portion 40, inert gas supply unit 50, control part 60 and input part 70.
Chamber 20 has pedestal (base) portion 21 and cap 22.Base portion 21 is components of the tabular of generally horizontal expansion.Cap 22 is the components having cup shape of the top covering base portion 21.In the inside of framework comprising base portion 21 and cap 22, collecting substrate G.And, sealing (seal) material 221 is possessed in the bottom of cap 22.Thus base portion 21 is blocked with outside being communicated with the inside of the chamber 20 at the contact site place of cap 22.
In base portion 21, be provided with exhaust outlet 23.Gas in chamber 20 can be expelled to outside chamber 20 via exhaust outlet 23 thus.At the chamber 20 of present embodiment, be provided with 4 exhaust outlets 23.In fig. 2, only figure is shown with 2 exhaust outlets 23 in 4 exhaust outlets 23.In addition, the quantity being located at the exhaust outlet 23 of chamber 20 both can be 1,2 or 3, also can be more than 5.
In the inside of chamber 20, be provided with supporting mechanism 24.Supporting mechanism 24 has supporting bracket 241, multiple supporting pin (pin) 242 and support column 243.Supporting bracket 241 is components of the tabular of generally horizontal expansion.Supporting bracket 241 keeps multiple supporting pin 242.At the upper end of multiple supporting pin 242 mounting substrate G, support from the back side to substrate G.Supporting pin 242 extends upward from supporting bracket 241 respectively.Multiple supporting pins 242 decentralized configuration in the horizontal direction.Thus, substrate G is stably supported.Support column 243 is the components supported supporting bracket 241.Base portion 21 is fixed in the bottom of support column 243.In addition, other components such as lowering or hoisting gear also can be fixed in the bottom of support column 243.
In addition, chamber 20 is provided with the pressure sensor (sensor) 25 measured the pressure in chamber 20.Base portion 21 is located at by the pressure sensor 25 of present embodiment, but also can arrange pressure sensor at the independent pipe arrangement 41 in pipe arrangement portion 40 or the first total pipe arrangement 42.
Exhaust pump 30 is the pumps of being discharged by the gas in chamber 20.Exhaust pump 30 is connected with the exhaust outlet 23 of chamber 20 via pipe arrangement portion 40.Thus, if exhaust pump 30 drives, just via exhaust outlet 23 and pipe arrangement portion 40, the gas in chamber 20 is expelled to the outside of decompression dry device 1.Described exhaust pump 30 is for passing through with fixing output driving the decompression exhaust means of carrying out decompression exhaust in chamber 20.Utilize valve 45 described later to carry out from the adjustment of the exhaust velocity of chamber 20.
Pipe arrangement portion 40 has 4 the total pipe arrangements 42, second of independent pipe arrangement 41, first total pipe arrangement 43 and 2 branch's pipe arrangements 44.The end of the upstream side that independent pipe arrangement 41 is respective is connected to exhaust outlet 23, and the end in downstream is connected to the first total pipe arrangement 42.In addition, in the present embodiment, the end in the downstream of 2 independent pipe arrangements 41 is connected to one end of the first total pipe arrangement 42, and the end in the downstream of other 2 independent pipe arrangements 41 is connected to the other end of the first total pipe arrangement 42.
The end in the downstream of the second total pipe arrangement 43 is connected to exhaust pump 30.The end of the upstream side that 2 branch's pipe arrangements 44 are respective is connected to the pipeline midway of the first total pipe arrangement 42, and the end in downstream is connected to the end of the upstream side of the second total pipe arrangement 43.Thus, the inside of chamber 20 is communicated with via total pipe arrangement 42,2 the branch's pipe arrangements 44 of the independent pipe arrangement of 4 exhaust outlets 23,4 41, first and the second total pipe arrangement 43 with exhaust pump 30.
In branch's pipe arrangement 44, be respectively arranged with valve 45.Valve 45 is situated between and is placed between chamber 20 and exhaust pump 30, regulates the flow of decompression exhaust.The valve 45 of present embodiment is the butterfly valve (butterflyvalve) being regulated its aperture by the angle of change valve.In addition, valve 45 uses butterfly valve in the present embodiment, as long as but regulate the valve of the flow of decompression exhaust by its aperture, also can use globe valve (globevalve) or other valves.
In addition, in the present embodiment, 2 valves 45 carry out action with identical aperture.That is, if the aperture of valve 45 is set as 20% by control part 60, then the aperture of 2 valves 45 is just all adjusted to 20%.
Inert gas supply unit 50 supplies inert gas in chamber 20.Inert gas supply unit 50 has inert gas supplying tubing 51, inert gas supply source 52 and open and close valve 53.One end of inert gas supplying tubing 51 is connected to the inner space of chamber 20, and the other end is connected to inert gas supply source 52.The inert gas supply source 52 of present embodiment supplies dry nitrogen as inert gas.Open and close valve 53 is arranged in inert gas supplying tubing 51.Therefore, if open and close valve 53 is opened, just in chamber 20, inert gas is supplied from inert gas supply source 52.And if open and close valve 53 is closed, the supply from inert gas supply source 52 to the inert gas of chamber 20 just stops.
In addition, inert gas supply unit 50 also can replace nitrogen and supply the inert gas of other dryings such as argon gas.And decompression dry device 1 also can replace inert gas supply unit 50 and have the air supply unit of supply air.
Each portion of control part 60 pairs of decompression dry devices 1 controls.As shown in conceptual in Fig. 2, control part 60 comprises computer (computer), described computer has central processing unit (CentralProcessingUnit, the storage part 63 such as the memory such as arithmetic processing section 61, random access memory (RandomAccessMemory, RAM) (memory) 62 and hard disk drive (HardDiskDrive) such as CPU).And control part 60 is electrically connected respectively with pressure sensor 25, exhaust pump 30,2 valves 45, open and close valve 53 and input parts 70.
The computer program be stored in storage part 63 (program) or data temporarily read out in memory 62 by control part 60, arithmetic processing section 61 carries out calculation process based on described computer program and data, controls thus to the action in each portion in decompression dry device 1.Thus, the drying under reduced pressure process in decompression dry device 1 is performed.In addition, control part 60 both can only control decompression dry device 1, also can control the entirety of substrate board treatment 9.
Input part 70 is for inputting the input unit that target pressure value and target reach the time for user.The input part 70 of present embodiment is provided at the input panel of substrate board treatment 9, but input part 70 also can be the input unit (such as, keyboard or mouse etc.) of other forms.If the time that target pressure value and target reached inputs to input part 70, described data are just taken into control part 60.
<1-3. the flow process > of drying under reduced pressure process
Next, one side is with reference to Fig. 3 ~ Fig. 5, and the drying under reduced pressure process in described decompression dry device 1 faced by is described.Fig. 3 is the flow chart of the flow process of the drying under reduced pressure process represented in decompression dry device 1.Fig. 4 is the figure of the example representing decreasing pressure curve data D.Fig. 5 is the figure of the example representing target reduced pressure waveform R.
As shown in Figure 3, first, decompression dry device 1 carries out learning procedure (step ST101).In learning procedure, decompression dry device 1, for often kind of aperture of the valve 45 predetermined, obtains the decreasing pressure curve data D (with reference to Fig. 4) of the pressure change in the chamber 20 of expression caused by decompression exhaust.
In the learning procedure of step ST101, making the pressure in chamber 20 become atmospheric pressure 100 by communicating with air, after 000 [Pa], exhaust pump 30 being driven, and valve 45 is opened with the aperture of regulation.And the pressure utilizing pressure sensor 25 to measure in chamber 20 after valve 45 is opened changes until through official hour.Control part 60 obtains decreasing pressure curve data D thus.By carrying out this pressure measxurement to the often kind of aperture predetermined, and obtain decreasing pressure curve data D respectively for multiple aperture.Decreasing pressure curve data D is such as held in storage part 63 with the form of list data, and described list data is often kind of aperture for valve 45 and represents the corresponding relation of elapsed time and force value.
In the present embodiment, as shown in Figure 4, the aperture for valve 45 is the situation of 5%, 7%, 8%, 10%, 12%, 15%, 20%, 50% and 100%, obtains decreasing pressure curve data D respectively.So, in the present embodiment, pressure sensor 25 and control part 60 form unit 80, and this unit 80 obtains decreasing pressure curve data D for often kind of aperture of the regulation of valve 45.
In the present embodiment, after carrying out the learning procedure of step ST101, carry out the drying under reduced pressure process of substrate G.First, the time that target pressure value and target reached inputs to input unit 70 (step ST102).In the present embodiment, the time that multiple for continuous print target pressure value and target reached inputs to input unit 70.Reach one of the target reduced pressure waveform R of time be illustrated in Fig. 5 by comprising described multiple target pressure value and target.
In the target reduced pressure waveform R of the example of Fig. 5, at first period T1, target pressure value is 10,000 [Pa], and it is 20 [sec] that target reaches the time.At second phase T2, target pressure value is 400 [Pa], and it is 10 [sec] that target reaches the time.T3 between the third phase, target pressure value is 400 [Pa], and it is 10 [sec] that target reaches the time.That is, T3 between the third phase, to maintain 400 [Pa] for target by force value.In addition, T4 between the fourth phase, target pressure value is 20 [Pa], and it is 5 [sec] that target reaches the time.And, after T4 reaches target pressure value between the fourth phase, made pressure recover in chamber 20 to atmospheric pressure by inert gas purge (purge).Reduce pressure by stages as the target reduced pressure waveform R of the such as example of Fig. 5, and suppress the treatment fluid bumping coating the surface of substrate G.
Secondly, substrate G is moved into chamber 20 (step ST103).Now, under the state that valve 45 and open and close valve 53 are closed, chamber switching mechanism (not shown) is utilized to make the cap 22 of chamber 20 increase.Thus chamber 20 is opened.Then, the substrate G being coated with treatment fluid is moved into in chamber 20, and is placed on supporting pin 242.Utilize chamber switching mechanism that cap 22 is declined afterwards.Thus chamber 20 is closed, thus substrate G is contained in chamber 20.
In the present embodiment, that after the input step of step ST102, carries out the substrate of step ST103 moves into step, but also can make the reversed order of step ST102 and step ST103.
Next, reach the time based on the target pressure value inputted in step ST102 and target, make decompression in chamber 20, make the substrate G drying (step ST104) being attached with treatment fluid thus.In step ST104, control part 60 selects the decreasing pressure curve data D of the waveform had along target reduced pressure waveform R, based on the aperture of the valve 45 in described decreasing pressure curve data D, and select the aperture of the valve 45 of each period, described target reduced pressure waveform R comprises target pressure value and target reaches the time.
As shown in Figure 4, decreasing pressure curve data D comprises pressure drop portion D1 and pressure stability portion D2 respectively.Fall portion D1 under stress, the pressure in chamber 20 passes through in time and declines.On the other hand, at pressure stability portion D2, pressure in chamber 20 and the exhaust pressure of decompression exhaust become poised state, or become poised state with from chamber 20 externally to the influx of the gas in chamber 20 to the air displacement of exhaust pump 30 in chamber 20, the pressure stability thus in chamber 20 is in the force value of regulation.
In step ST104, the first period T1 fallen under stress, second phase T2 and T4 between the fourth phase, decide the aperture of valve 45 according to the pressure drop portion D1 of decreasing pressure curve data D.In addition, T3 between the third phase maintaining pressure, decides the aperture of valve 45 according to the pressure stability portion D2 of decreasing pressure curve data D.
Such as, at first period T1, need from atmospheric pressure 100 during 20 [sec], 000 [Pa] is decompressed to 10,000 [Pa].Control part 60 is with reference to the pressure drop portion D1 of decreasing pressure curve data D, and from 100 when being 8% based on aperture, 000 [Pa] is decompressed to 10, is the situation of about 20 [sec], the aperture of the valve 45 of first period T1 is set as 8% during 000 [Pa].
Then, at second phase T2, need the target pressure value 10,000 [Pa] from first period T1 during 10 [sec] to be decompressed to 400 [Pa].On the other hand, with reference to the pressure drop portion D1 of decreasing pressure curve data D, when aperture is 12%, from 10, be about 9 [sec] during 000 [Pa] is decompressed to 400 [Pa].In addition, when aperture is 10%, from 10, be about 12 [sec] during 000 [Pa] is decompressed to 400 [Pa].
Based on this, in the present embodiment, the aperture of the valve 45 of second phase T2 is set as 10% by control part 60.That is, when in the multiple aperture obtaining decreasing pressure curve data D, when nothing meets the aperture of required target reduced pressure waveform R, the control part 60 of present embodiment, from 2 kinds of approximate apertures, selects aperture little.If the aperture selecting decompression rate slower than target reduced pressure waveform R as mentioned above, pressure in chamber 20 can be prevented lower than target reduced pressure waveform R.Therefore, the bumping of the treatment fluid coated on substrate G is suppressed further.Now, second phase T2 also based on the decreasing pressure curve data D of aperture 10%, can be extended to 12 [sec] by control part 60.
In addition, control part 60 also according to the 2 kinds of apertures be similar in described period and target reduced pressure waveform R, can calculate the aperture meeting target reduced pressure waveform R by calculating.Now, the aperture of the valve 45 of second phase T2 is set as the aperture calculated by calculating.
Next, between the third phase, the target pressure value 400 [Pa] of T3 is the force value identical with the target pressure value 400 [Pa] of second phase T2.That is, T3 between the third phase, needs, during 10 [sec], the pressure in chamber 20 is maintained 400 [Pa].Control part 60 is with reference to the pressure stability portion D2 of decreasing pressure curve data D, and when being 7% based on aperture, pressure maintains the situation of about 400 [Pa], and the aperture of the valve 45 of T3 between the third phase is set as 7%.
Then, T4 between the fourth phase, needs to be decompressed to 20 [Pa] from the target pressure value 400 [Pa] of T3 between the third phase during 5 [sec].The aperture of the valve 45 of T4 between the fourth phase with reference to the pressure drop portion D1 of decreasing pressure curve data D, and based on the situation for about 5 [see] during being decompressed to 20 [Pa] from 400 [Pa] during aperture 50%, is set as 50% by control part 60.
After between the fourth phase, T4 terminates, valve 45 cuts out and stops from the exhaust in chamber 20 by control part 60.Then, open and close valve 53 is opened, carry out the purge from inert gas supply source 52 to the inert gas in chamber 20.Make thus to rise to atmospheric pressure atmospherically in chamber 20.When the pressure in chamber 20 becomes atmospheric pressure, open and close valve 53 is closed.Drying under reduced pressure step terminates thus.
Afterwards, substrate G (step ST105) is taken out of from chamber 20.In step ST105, in the same manner as step ST103, under the state that valve 45 and open and close valve 53 are closed, chamber switching mechanism is utilized to make the cap 22 of chamber 20 increase.Thus chamber 20 is opened.Then the substrate G after the process of enforcement drying under reduced pressure is taken out of to outside chamber 20.
If decompression dry device 1 environment difference is set, even if the aperture of valve 45 is identical, the decompression rate in chamber 20 is also different.Therefore, with good grounds decompression dry device 1 environment is set, produce the worry deviated between required decompression rate and the decompression rate of reality.
In the present embodiment, before the drying under reduced pressure process of the substrate G utilizing step ST102, step ST103, step ST104 and step ST105 to carry out, carry out the learning procedure of step ST101.Thus, when carrying out the drying under reduced pressure process of substrate G with decompression dry device 1 identical environment is set under, obtain decreasing pressure curve data D.By carrying out drying under reduced pressure process based on this decreasing pressure curve data D, can suppress to produce between required decompression rate and the decompression rate of reality to deviate from.That is, can with required decompression rate closer to decompression rate carry out reduced pressure treatment.
In addition, the learning procedure of step ST101 also can not carry out when each drying under reduced pressure process of the substrate G utilizing step ST102, step ST103, step ST104 and step ST105 to carry out.Described learning procedure also can carry out in the setting of decompression dry device 1 or when moving and establish, or carries out when regular maintenance (maintenance).
In addition, even if utilize the multiple decompression dry devices 1 manufactured by same design, because of foozle etc., even if carry out drying under reduced pressure process with the aperture of identical valve 45, also there is deviation in the decompression rate in the chamber 20 of each decompression dry device 1.By such as present embodiment in each decompression dry device 1, before drying under reduced pressure process, obtain decreasing pressure curve data D, following situation can be suppressed: because of the individual difference of decompression dry device 1, produce between required decompression rate and the decompression rate of reality and deviate from.That is, can with required decompression rate closer to decompression rate carry out reduced pressure treatment.
So, decompression dry device 1 according to the present embodiment, no matter the individual difference of device or arrange environment, all in each period of target reduced pressure waveform R, can carry out reduced pressure treatment with the decompression rate close with required decompression rate.Thus, the bumping of anti-corrosion liquid is inhibited, thus can obtain level and smooth etchant resist.
<2. variation >
Above, one embodiment of the present invention is illustrated, but the present invention is not limited to described execution mode, such as also can as described below as distortion and implement.
In the decompression dry device of described execution mode, by each period for target reduced pressure waveform R, the time decompression from force value originally to target pressure value in each decreasing pressure curve data spent, the time that to reach with target compare, and set the aperture of valve, but the present invention is not limited to this.Decompression dry device of the present invention also can calculate the parameter (parameter) such as decompression rate or decompression acceleration according to each decreasing pressure curve data, sets the aperture of valve based on this parameter.In addition, decompression dry device of the present invention also can use other algorithms (algorithm), sets the aperture of valve based on decreasing pressure curve data.
In addition, in said embodiment, decompression dry device only has 1 chamber, but the present invention is not limited to this.Multiple pipe arrangement portions that decompression dry device also can have multiple chamber and be connected with each chamber.Now, control part preferred pin, to each of multiple chamber, obtains intrinsic decreasing pressure curve data.Thus, corresponding to the intrinsic pressure variation characteristic of each chamber, can realize with target reduced pressure waveform closer to decompression waveform.
In addition, in said embodiment, pipe arrangement portion has 2 valves, but the valve that pipe arrangement portion possesses both can be 1, also can be more than 3.
In addition, in said embodiment, make 2 valves carry out action with identical aperture, but also can carry out action with different opening respectively.Now, the list data aperture of each valve combined is made.
In addition, the decompression dry device of described execution mode is a part for substrate board treatment, but decompression dry device of the present invention also can be the independently device do not arranged together with other handling parts.In addition, the decompression dry device of described execution mode is the drying substrates making to be attached with anti-corrosion liquid, but decompression dry device of the present invention also can make the drying substrates being attached with other treatment fluids.
In addition, the decompression dry device of described execution mode is using liquid crystal indicator glass substrate as handling object, but decompression dry device of the present invention also can using PDP glass substrate, semiconductor wafer, photomask glass substrate, colored filter substrate, other precision electronic device substrates such as record base-board for plate, substrate used for solar batteries etc. as handling object.
In addition, also can be appropriately combined in the scope not producing contradiction by each key element occurred in described execution mode and variation.

Claims (10)

1. a decompression dry device, carry out drying under reduced pressure to the substrate being attached with treatment fluid, the feature of described decompression dry device is to comprise:
Chamber, accommodates described substrate;
Decompression exhaust unit, carries out decompression exhaust in described chamber;
Valve, is situated between and is placed between described chamber and described decompression exhaust unit, utilize the aperture of described valve to regulate the flow of decompression exhaust;
Unit, for often kind of aperture of the regulation of described valve, obtains the decreasing pressure curve data of the pressure change in the described chamber of expression caused by decompression exhaust;
Input unit, is transfused to target pressure value and target reaches the time; And
Control part, controls the aperture of described valve; And
Described control part reaches the time based on described decreasing pressure curve data, the described target pressure value inputted and described target and regulates the aperture of described valve.
2. decompression dry device according to claim 1, is characterized in that:
Time is reached to the described input unit input multiple described target pressure value of continuous print and described target.
3. decompression dry device according to claim 1, is characterized in that:
Comprise multiple described valve, and
Described control part makes multiple described valve all carry out action with same aperture.
4. decompression dry device according to claim 1, is characterized in that:
Described valve regulates aperture by the angle changing valve.
5. decompression dry device according to claim 1, is characterized in that:
Described decreasing pressure curve packet contains:
Pressure drop portion, the pressure in described chamber passes through in time and declines; And
Pressure stability portion, the pressure stability in described chamber is in the force value of regulation; And
During the force value of described target pressure value lower than the script in described chamber, described control part sets the aperture of described valve with reference to described pressure drop portion, during described target pressure value is roughly the same with the force value of the script in described chamber, described control part sets the aperture of described valve with reference to described pressure stability portion.
6. decompression dry device according to claim 1, is characterized in that:
Comprise multiple described chamber, and
Described unit, for each of described chamber, obtains intrinsic described decreasing pressure curve data.
7. a substrate board treatment, substrate is carried out to coating and the development of anti-corrosion liquid, the feature of described substrate board treatment is to comprise:
Coating part, to anti-corrosion liquid described in the described base plate coating before exposure-processed;
Decompression dry device according to any one of claim 1 to 6, carries out drying under reduced pressure to the described substrate being attached with described anti-corrosion liquid; And
Development section, carries out development treatment to the described substrate after implementing described exposure-processed.
8. a decompression drying method, by be contained in by the substrate being attached with treatment fluid in chamber and to reduce pressure in described chamber, and make described drying substrates, the feature of described decompression drying method is to comprise:
Learning procedure, for the often kind of aperture of regulation of valve regulating the flow be vented from described chamber depressurization, obtains the decreasing pressure curve data of the pressure change in the described chamber that represents caused by decompression exhaust;
Input step, input target pressure value and target reach the time; And
Drying under reduced pressure step, after described learning procedure and described input step, reaches the time based on described decreasing pressure curve data, the described target pressure value inputted and target and regulates the aperture of described valve.
9. decompression drying method according to claim 8, is characterized in that:
In described input step, the described target pressure value that input continuous print is multiple and described target reach the time.
10. decompression drying method according to claim 8 or claim 9, is characterized in that:
Described decreasing pressure curve packet contains:
Pressure drop portion, the pressure in described chamber passes through in time and declines; And
Pressure stability portion, the pressure stability in described chamber is in the force value of regulation; And
In described drying under reduced pressure step, during the force value of described target pressure value lower than the script in described chamber, the aperture of described valve is set with reference to described pressure drop portion, during described target pressure value is roughly the same with the force value of the script in described chamber, set the aperture of described valve with reference to described pressure stability portion.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106111487A (en) * 2016-06-27 2016-11-16 昆山国显光电有限公司 A kind of substrate drying under reduced pressure system and drying means thereof
CN107062812A (en) * 2017-04-26 2017-08-18 京东方科技集团股份有限公司 One kind is dried under reduced pressure chamber and vacuum decompression drying equipment
CN107357141A (en) * 2017-07-28 2017-11-17 武汉华星光电技术有限公司 A kind of substrate apparatus for baking and method
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101710564A (en) * 2008-08-19 2010-05-19 东京毅力科创株式会社 Substrate processing system
CN102193345A (en) * 2010-02-04 2011-09-21 东京毅力科创株式会社 Decompression drying method and decompression drying device
CN103578928A (en) * 2013-10-21 2014-02-12 上海和辉光电有限公司 Substrate drying method, substrate manufacturing method, and low-temperature heating drying device thereof
KR20140083901A (en) * 2012-12-26 2014-07-04 다이니폰 스크린 세이조우 가부시키가이샤 Method and apparatus for drying under reduced pressure

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4496229B2 (en) * 2001-09-19 2010-07-07 東京エレクトロン株式会社 Vacuum drying apparatus and coating film forming method
JP2006205078A (en) * 2005-01-28 2006-08-10 Seiko Epson Corp Substrate dryer, substrate processing system, manufacturing method of electro-optical device, electro-optical device and electronic instrument
JP2006261379A (en) 2005-03-17 2006-09-28 Dainippon Screen Mfg Co Ltd Reduced pressure dryer, exhauster, and reduced pressure drying method
JP2011021672A (en) * 2009-07-15 2011-02-03 Ihi Corp Ball valve, and method of inspecting leakage in the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101710564A (en) * 2008-08-19 2010-05-19 东京毅力科创株式会社 Substrate processing system
CN102193345A (en) * 2010-02-04 2011-09-21 东京毅力科创株式会社 Decompression drying method and decompression drying device
KR20140083901A (en) * 2012-12-26 2014-07-04 다이니폰 스크린 세이조우 가부시키가이샤 Method and apparatus for drying under reduced pressure
CN103578928A (en) * 2013-10-21 2014-02-12 上海和辉光电有限公司 Substrate drying method, substrate manufacturing method, and low-temperature heating drying device thereof

Cited By (15)

* Cited by examiner, † Cited by third party
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