CN102193343B - Developing apparatus and developing method - Google Patents
Developing apparatus and developing method Download PDFInfo
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- CN102193343B CN102193343B CN201110039010.2A CN201110039010A CN102193343B CN 102193343 B CN102193343 B CN 102193343B CN 201110039010 A CN201110039010 A CN 201110039010A CN 102193343 B CN102193343 B CN 102193343B
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/3021—Imagewise removal using liquid means from a wafer supported on a rotating chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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Abstract
There is provided a developing apparatus and a developing method capable of rapidly forming a liquid film of a developing solution on an entire surface of a substrate while reducing a usage amount of the developing solution. The developing apparatus includes an airtightly sealed processing vessel that forms a processing atmosphere therein; a temperature control plate that is provided within the processing vessel and mounts the substrate thereon; an atmosphere gas supply unit that supplies an atmosphere gas including mist and vapor of a developing solution onto a surface of the substrate within the processing vessel; and a first temperature control unit that controls the temperature control plate to a temperature allowing the atmosphere gas to be condensed on the substrate. Here, an inner wall of the processing vessel is maintained at a temperature at which the atmosphere gas is hardly condensed on the inner wall.
Description
Technical field
The present invention relates to a kind of effects on surface is coated with resist and the substrate that has been exposed develops developing apparatus and developing method.
Background technology
In the development treatment of in the past photoresist (hereinafter referred to as resist), from nozzle to having applied resist and having supplied with developer solution along semiconductor crystal wafer (hereinafter referred to as wafer (the Wafer)) surface of pattern (Pattern) exposure of regulation.For the homogeneity of the processing that obtains crystal column surface, and supply with above-mentioned developer solution in the mode that can be formed uniformly on the whole surface of wafer liquid film, and utilize this liquid film to dissolve resist.
Method as the liquid film that forms like this developer solution, known have a following method: while make the nozzle of the ejiction opening with strip move wafer ejection developer solution to stationary state, come the whole surface of wafer is carried out the method (puddle development: puddle formula (revolve and cover submergence) is developed) of quiet liquid development (Japanese: liquid is contained り), while making wafer for example rotate radially supply developer solution along this wafer around vertical axes, and under the effect of centrifugal force, be coated with out the method (puddleless development: non-puddle formula (revolve and cover submergence) is developed) of developer solution.
Consider the composition of the material that consists of resist, the reaction meeting of developer solution and resist was carried out within the relatively shorter time.But, in above-mentioned each method, need to use a large amount of developer solutions in order to form uniform liquid film, and need spended time that this developer solution is supplied on the wafer.Can spend a large amount of time in the operation of supplying with like this developer solution, therefore the supply from developer solution begins to need the regular hour till the reaction of this developer solution and resist is finished for example about 30 seconds～60 seconds.
But, as the exposure-processed of wafer, sometimes adopt immersion exposure to process, in order to suppress to bring the impact of wafer for the liquid that this immersion exposure is processed, and have the trend of the water proofing property that improves resist.But in the situation of having used the high resist of water proofing property, if utilize above-mentioned each method to develop, then appearance is not developed the position that liquid infiltrates easily.Therefore, for the resist of such a high water proofing property, in order to be formed uniformly the liquid film of developer solution, need more developer solution, and it is longer to cause that cost uprises, the service time of developer solution becomes, thus the high productivity that might hinder developing apparatus.
In patent documentation 1, recorded and narrated and to be vaporific developer solution and to supply to technology in the chamber (Chamber) of taking in substrate.Substrate is supported with the state that floats from heating plate, and the temperature of this substrate is adjusted by heating plate.And, also recorded and narrated by the Temperature Setting with substrate and must hang down to make developer solution to form the method for liquid film in the substrate surface dewfall than the temperature of vaporific developer solution.But, for to temperature control panel (temperature adjusting plate) situation of steam dewfall on this substrate of developer solution not being recorded and narrated substrate-placing.
Patent documentation 1: TOHKEMY 2005-277268(the 0139th, 0141 section)
Summary of the invention
The present invention In view of the foregoing makes, and its purpose is to provide a kind of developing apparatus and developing method that can suppress the use amount of developer solution and form rapidly the liquid film of developer solution on the whole surface of substrate.
Developing apparatus of the present invention is the developing apparatus that the substrate that has exposed is developed, and it is characterized in that, comprising:
Airtight container handling, it is used to form processing atmosphere;
Temperature control panel, it is located in the above-mentioned container handling, is used for the mounting substrate;
The atmosphere gas supply unit, the atmosphere gas that comprises developer solution mist (mist) and developer solution steam is supplied with on its surface for the substrate in above-mentioned container handling;
The 1st temperature adjustment part, it is used for the temperature of above-mentioned temperature control panel is adjusted into the temperature that makes above-mentioned atmosphere gas dewfall on substrate; With
Temperature setting portion, it sets the temperature of described temperature control panel by above-mentioned the 1st temperature adjustment part, so that the thickness of the liquid film of the developer solution on aforesaid substrate surface becomes the thickness corresponding with the processing processing procedure program (recipe) of substrate,
The temperature of the inwall of above-mentioned container handling is maintained the temperature that above-mentioned atmosphere gas is difficult to dewfall on this inwall.
In addition, above-mentioned developing apparatus also can comprise the 2nd temperature adjustment part, and it is used for temperature with the inwall of above-mentioned container handling and is maintained above-mentioned developer solution steam temperature of dewfall not on this inwall.And above-mentioned temperature control panel for example comprises and being used for the lip-deep adsorbing mechanism of substrate adsorption at this temperature control panel.
Above-mentioned development atmosphere gas also can comprise the developer solution steam and replace and comprise developer solution mist and developer solution steam, and for example above-mentioned atmosphere gas supply unit comprises the heater block for heating atmosphere gas.Atmosphere gas also can utilize above-mentioned heater block to be heated to the temperature higher than the saturation temperature of the developer solution in the heating atmosphere.
In addition, developing method of the present invention is the developing method that the substrate that has exposed is developed, and it is characterized in that, comprising:
To forming the operation of moving into substrate in the airtight container handling of processing atmosphere;
Supply with the operation of the atmosphere gas that comprises developer solution mist and developer solution steam to the surface of moving into the substrate in the processing container;
The temperature that is located in the container handling and be used for the temperature control panel of mounting substrate is adjusted into the operation of above-mentioned developer solution steam below the temperature of dewfall on the substrate;
With substrate-placing on above-mentioned temperature control panel and make above-mentioned developer solution steam dewfall, utilize above-mentioned developer solution mist and this dewfall partly to form the operation of the liquid film of developer solution; With
Set the temperature of temperature control panel so that the thickness of the liquid film of the developer solution on aforesaid substrate surface becomes the operation of the thickness corresponding with the processing processing procedure program of substrate,
The temperature of the inwall of above-mentioned container handling is maintained the temperature that above-mentioned developer solution steam is difficult to dewfall on this inwall.
Above-mentioned development atmosphere gas is characterised in that, for example comprises the developer solution steam and replaces and comprise developer solution mist and developer solution steam.Above-mentioned developing method also can comprise the operation of utilizing heater block that above-mentioned atmosphere gas is heated, and in this case, atmosphere gas is characterised in that it is heated to the temperature higher than the saturation temperature of the developer solution of heating atmosphere.
Adopt the present invention, the atmosphere gas that will comprise developer solution mist and developer solution steam supplies on the substrate, and the Temperature Setting that mounting is had the temperature control panel of substrate is that the developer solution steam is below the temperature of dewfall on the substrate, therefore can suppress the use amount of developer solution, and can on the whole surface of substrate, form rapidly liquid film.
Description of drawings
Fig. 1 is the vertical profile side view of the developing apparatus of embodiments of the present invention.
Fig. 2 is the vertical view of above-mentioned developing apparatus.
Fig. 3 is the stereographic map of above-mentioned developing apparatus.
Fig. 4 is the coordinate diagram of the vapor pressure curve of expression developer solution.
Fig. 5 is the key diagram that is illustrated in the state of developer solution dewfall on the wafer.
Fig. 6 is objective table (stage) temperature that has in the control part of expression and the key diagram of the corresponding relation between the development liquid film thickness.
Fig. 7 is the process chart that expression utilizes the order that above-mentioned developing apparatus processes.
Fig. 8 is the process chart that expression utilizes the order that above-mentioned developing apparatus processes.
Fig. 9 is the process chart that expression utilizes the order that above-mentioned developing apparatus processes.
Figure 10 is the process chart that expression utilizes the order that above-mentioned developing apparatus processes.
Figure 11 is the vertical profile side view of other developing apparatus.
Figure 12 is the process chart that expression utilizes the order that above-mentioned developing apparatus processes.
Figure 13 is the process chart that represents other processing sequence.
Figure 14 is the key diagram of other structures of the container handling of expression developing apparatus.
Figure 15 is the longitudinal section of the wafer that obtains by evaluation test.
Figure 16 is the longitudinal section of the wafer that obtains by evaluation test.
Figure 17 is the mean value of CD of the pattern that obtains according to evaluation test of expression and the coordinate diagram of 3 σ.
Figure 18 is the mean value of CD of the pattern that obtains according to evaluation test of expression and the coordinate diagram of 3 σ.
Figure 19 is the mean value of CD of the pattern that obtains according to evaluation test of expression and the coordinate diagram of 3 σ.
Embodiment
The 1st embodiment
Respectively with reference to Fig. 1, Fig. 2 of cross-sectional vertical view of the vertical profile side view of developing apparatus 1, the developing apparatus 1 of embodiments of the present invention is described.This developing apparatus 1 comprises housing 11, offers the delivery port 12 of wafer W at the sidewall of housing 11.Utilize transfer unit shown in Figure 2 21 that wafer W is transported in the housing 11 via this delivery port 12.
For example be formed with the resist film of water proofing property on the surface of this wafer W, this resist film is made of positive corrosion-resisting agent (Positive resist), in exposure device, is exposed along the pattern of stipulating.But developing apparatus of the present invention and developing method can either be applicable to organic development, also can be applicable to positive corrosion-resisting agent and similarly be applicable to negative resist (Negative resist).Organic development refers to utilize the development of the developer solution take organism as main Chinese medicinal materials.In addition, wafer W accepts heating (PEB(Post Exposure Bake) after above-mentioned exposure and before being transported to above-mentioned developing apparatus 1: postexposure bake) process.Transfer unit 21 comprises: arm body 22, and it is around the side week of wafer W; Support 23, its side week at above-mentioned arm body 22 is provided with a plurality of, is in this example 4, is used for the back side of supporting wafer W.
In housing 11, be provided with the dividing plate 13 that the inside with this housing 11 separates up and down.The upside of dividing plate 13 is constituted as for moving into the regional 14a of moving into of wafer W to container handling 5 described later.Move into and be provided with coldplate 15 in the regional 14a.Coldplate 15 roughly forms circle, is provided with from the circumferential breach 16 of central authorities of side at this coldplate 15, so that support 23 mutually noninterferes of this coldplate 15 and this transfer unit 21 when carrying out the handing-over of wafer W between this coldplate 15 and above-mentioned transfer unit 21.The rear side of coldplate 15 for example has the not shown stream that flows through for the water after the temperature adjustment, and when loading the wafer W after the heating arrangement heat treated of the previous stage of developing apparatus 1 on the coldplate 15, this wafer W is cooled.
Be provided with slit (slit) 17a, 17b at coldplate 15, aftermentioned lifter pin 42 is outstanding from the surface of coldplate 15 via this slit 17a, 17b.Be provided with the drive division 18 that is connected with coldplate 15 at the lower zone 14b of dividing plate 13 downsides, this drive division 18 makes this coldplate 15 along mobile in the horizontal direction from inboard guiding piece (guide) 15a that forms of developing apparatus 1 front side direction.
Also reference describes as Fig. 3 of the stereographic map of developing apparatus 1.Be provided with the temperature control panel 3 for the circle of mounting wafer W in the inboard of developing apparatus 1, the fluid after the inside of this temperature control panel 3 is formed with adjustment, the stream of for example water 31.Temperature control panel 3 is connected with an end of tempered water supply pipe 32, tempered water recovery tube 33 respectively, and the other end of tempered water supply pipe 32, tempered water recovery tube 33 is connected with pump 34 respectively.Be provided with temperature adjustment section 35 midway at tempered water supply pipe 32, this temperature adjustment section 35 comprises: well heater, and it is used for the water that supplies in this temperature adjustment section 35 is heated; The stream of cold-producing medium, it cools off above-mentioned water by heat interchange.Output by controlling above-mentioned well heater and the circulation of above-mentioned cold-producing medium, the temperature that the adjustment of above-mentioned water can be set to the user.
Tempered water supply pipe 32, tempered water recovery tube 33 and stream 31 form the circulating path of tempered waters, and the water that utilizes pump 34 to supply in the tempered water supply pipe 32 supplies in the stream 31 after above-mentioned temperature adjustment section 35 regulates temperature.And the water that utilizes pump 34 to reclaim via tempered water recovery tube 33 from stream 31 again supplies in the tempered water supply pipe 32 and carries out adjustment.By making like this tempered water circulation, the temperature on whole surface that can control temperature control panel 3 is even, and is identical temperature with the temperature of being regulated the water of temperature by temperature adjustment section 35.And the temperature that is positioned in the wafer W on the temperature control panel 3 is adjusted to the temperature identical with this temperature control panel 3 surfaces.
Central portion on temperature control panel 3 surfaces offers and attracts mouthfuls 36, at the circumference on temperature control panel 3 surfaces along a plurality of the attraction mouths 37 of circumferentially offering of temperature control panel 3.These attract mouth 36,37 to be connected with an end of gas outlet 38 respectively.The other end of each gas outlet 38 is combined, and is connected with the exhaust component 40 that is made of vacuum pump etc. via flow control section 39.Flow control section 39 comprises valve (Valve), mass flow controller (Mass Flow Controller), the control air capacity.These attract mouthfuls 36,37, flow control section 39 and exhaust component 40 consist of makes wafer W be adsorbed on adsorbing mechanism on the temperature control panel.
On the surface of temperature control panel 3, along the circumferential array of this temperature control panel 33 holes 41 are arranged, passed 3 lifter pin 42(for convenience's sake at these hole 41 interior thickness directions along temperature control panel 3, in Fig. 1, only represented two).Lifter pin 42 carries out the handing-over of wafer W between coldplate 15 and temperature control panel 3 under the surface of outstanding from the surface of temperature control panel 3 under the drive of elevating mechanism 43 or the temperature control panel 3 that submerges.In temperature control panel 3, be provided be used to the containment member 44 that prevents from around lifter pin 42, spilling above-mentioned tempered water.
Offer a plurality of exhausr ports 45 in the mode around temperature control panel 3 on dividing plate 13, this exhausr port 45 is connected with an end of gas outlet 46.The other end of gas outlet 46 is combined, and is connected with exhaust component 40 via flow control section 47.Flow control section 47 and flow control section 39 consist of in the same manner.In addition, on dividing plate 13, be provided with O type circle 48 in the mode around exhausr port 45.
Be provided with container handling 5 above temperature control panel 3, this container handling 5 is constituted as the container of the flat circle of lower opening.This container handling 5 is connected with elevating mechanism 52 by means of support 51, and can lifting under the effect of this elevating mechanism 52.As shown in Figure 1, lower end and the O type circle 48 of this container handling 5 are close to when container handling 5 descends, and at airtight processing space (processing atmosphere) S of container handling 5 interior formation.Wall section at container handling 5 is provided with well heater 59.This well heater 59 is maintained the temperature that development atmosphere gas described later is difficult to dewfall with the temperature of container handling 5 inwalls.The temperature that the development atmosphere gas is difficult to dewfall refers to, comprises the not temperature of dewfall of development atmosphere gas, than being included in the high temperature of dewfall point that is fed into the developer solution steam in the development atmosphere gas of processing in the space S.Central lower surface at container handling 5 tops is provided with the nozzle 53 of processing in the space S for the developer solution steam is supplied to.Nozzle 53 is connected via the end of the peristome 54 that is located at container handling 5 center of top sections with development atmosphere gas supply pipe 55.
The other end of development atmosphere gas supply pipe 55 is connected with the developer solution supply source 58 of storage developer solution via development atmosphere gas heating part 56, flow control section 57 successively.Developer solution supply source 58 comprises not shown force feed parts, supplies with developer solution to the downstream side of development atmosphere gas supply pipe 55.With flow control section 39,47 identical, flow control section 57 also comprises valve, mass flow controller, and control is to the supply flow rate of the developer solution of downstream side.Development atmosphere gas heating part 56 can be with the developer solution of being supplied with by development atmosphere gas supply pipe 55 and the N that is supplied with by non-active gas supply pipe 61 described later
2Gas mixes, and generates the development atmosphere gas of the mist (hereinafter referred to as the development mist) that contains developer solution.The development atmosphere gas that generates supplies to via development atmosphere gas supply pipe 55 and processes in the space S.
And development atmosphere gas heating part 56 is such as comprising the heater blocks such as well heater, and this heating part 56 can be heated this development atmosphere gas and it is adjusted to the temperature of regulation.In the 1st embodiment, the temperature of this development atmosphere gas is controlled as the temperature that comprises development mist and developer solution steam (hereinafter referred to as the development steam).For the temperature of controlling as described later temperature control panel 3 is controlled dewfall amount to wafer W, for example when development treatment, utilize flow control section 57 will supply to the supply flow rate of the developer solution of development atmosphere gas heating part 56, the content (g/cm of the developer solution in the above-mentioned development steam
3) and the temperature of development atmosphere gas be controlled to be in the processing of each wafer W constant.And, also be controlled to be in the processing of each wafer W to the time of processing space S and supply with the development atmosphere gas constant, from exhausr port 45 with attract mouthfuls 36,37 air capacity also to be controlled to be for example constant in the processing of each wafer W.Thus, control, so that be attached with the development mist of constant basis at each wafer W.Development atmosphere gas supply pipe 55 and development atmosphere gas heating part 56 consist of the atmosphere gas supply unit.
Development atmosphere gas heating part 56 is connected with an end of non-active gas supply pipe 61.The other end of non-active gas supply pipe 61 is via flow control section 63 and store for example N of non-active gas
2The N of gas
2 Gas supply source 64 connects.N
2Gas can supply in the processing space S with the state that is included in as described above in the development atmosphere gas, also can supply to separately via development atmosphere gas supply pipe 55 as purge gas (Purge gas) and process in the space S.
At this, the summary of the processing that the developing apparatus 1 of the 1st embodiment is carried out describes.Fig. 4 represents the vapor pressure curve R1 of developer solution, the transverse axis of coordinate represent the to develop temperature of steam, and the longitudinal axis of coordinate represents to be included in the developer solution content (g/cm in the development steam
3).At this, the development steam that utilizes development atmosphere gas heating part 56 to generate and to supply in the development atmosphere gas of processing in the space S is for example described for the development steam of the state of the some P shown in the coordinate.That is, above-mentioned its temperature of development steam is t0 and comprises Xg/cm
3Developer solution.
Wafer W before (a) expression development treatment of Fig. 5.Process in the space S and when loading above-mentioned wafer W on the temperature control panel 3, the temperature of wafer W descends along with the drop in temperature of this temperature control panel 3 when the development steam is supplied to.Thus, the temperature of the development steam around such wafer W drops to dewfall point t1 from t0 shown in the some P ＇ in the coordinate diagram.Dewfall point t1 is the maximum temperature that the development steam becomes saturated vapor.That is, the temperature higher than this dewfall point t1 is the not temperature of dewfall of this development steam, and the following temperature of dewfall point t1 is the temperature of this development steam dewfall.And, like this when the temperature of development steam is dewfall point t1, be included in developer solution in this development steam at wafer W surface sweating, and shown in Fig. 5 (b), form like that development liquid film 50 as thin as a wafer.When comparing the temperature of further reduction development steam with dewfall point t1, the dewfall amount of developer solution increases, and the thickness of the development liquid film 50 shown in the H 1 among (c) of Fig. 5 is strengthened.
In addition, for example when the temperature that makes the development steam is reduced to t2 shown in the coordinate, developer solution dewfall on wafer W surface of the corresponding amount of difference of the saturating capacity Y of developer solution when the saturating capacity X of developer solution and temperature t 2 during dewfall point t1.Equally, when the temperature that makes the development steam is reduced to t3, the developer solution of the corresponding amount of difference of the saturating capacity Z of developer solution dewfall on wafer W surface when above-mentioned X and temperature t 3.The thickness H1 of development liquid film 50 with like this on wafer W surface the development liquid measure of dewfall correspondingly change.Therefore, by the temperature of control temperature control panel 3, can control above-mentioned dewfall amount, and the size of the thickness H1 of control development liquid film 50.
As mentioned above, owing to be attached with a certain amount of development mist on wafer W surface, the thickness H1 that therefore in fact is formed on the development liquid film on the wafer W be included in developer solution dewfall in the development steam the thickness that is combined of the attachment portion of part and development mist.In developing apparatus 1, store the temperature of wafer W in the storer of control part 100 described later with the corresponding relation between the thickness H1 of development liquid film 50.When the user determines thickness H1, according to this corresponding relation, make 35 actions of temperature adjustment section, so that the temperature of control temperature control panel 3.
After forming development liquid film 50, in this developing apparatus 1, remove the liquid component of development liquid film 50, make wafer W surface become drying regime, stop the reaction of resist and developer solution.In order to make like this wafer W become dry state, the thickness of the liquid film 50 that preferably develops is got over Bao Yuehao.In addition, as long as poor visualization, defective occur at formation corrosion-resisting pattern (Resist pattern) Shi Buhui, then thickness H1 gets over Bao Yuehao.The user can consider above-mentioned situation and arbitrary decision thickness H1.The concrete numerical example of the thickness H1 of Fig. 5 (c) is as being 1 μ m～100 μ m.
Turn back to the explanation to developing apparatus 1 structure, control part 100 is described.Control part 100 for example is made of computing machine, has not shown program storage part.In this program storage part, to store in order carrying out on illustrated development treatment described later and to compile the program that is for example consisted of by software of order.By making control part 100 read this program, control part 100 is transmitted control signal to each one of developing apparatus 1.Control thus the adjustment, tempered water of lifting, 35 pairs of water of temperature adjustment section of container handling 5 and lifter pin 42 to the output of the well heater 59 of the supply of the stream 31 of temperature control panel 3, container handling 5, development atmosphere gas to the supply of processing space S etc.This program is such as being stored in the program storage part with the state that is accommodated in the storage mediums such as hard disk, CD, magneto-optic disk or storage card.
In addition, store chart shown in Figure 6 65 in the storer of control part 100.Reference numeral 66 is buses among the figure.The temperature of the temperature control panel 3 when this chart 65 stores mounting wafer W is arranged in each processes the number of processing procedure program is with the corresponding relation between the thickness H1 of development liquid film 50.Such as previously discussed, the temperature of temperature control panel 3 is identical with the temperature of wafer W on being positioned in this temperature control panel 3.Control part 100 for example has the display part that is made of display, also shows above-mentioned corresponding relation on this display part.The corresponding relation that the user is shown according to display part for example passes through the number that the processing procedure program is processed in never illustrated input part selection, decides the temperature of above-mentioned temperature control panel 3 and the thickness H1 of development liquid film 50.
Next, the effect of developing apparatus 1 described.At first, user never illustrated input part selects the number of above-mentioned processing processing procedure program, decides the temperature of temperature control panel 3 and the thickness H1 of development liquid film 50.Then, supply with the tempered water of the temperature corresponding with the processing processing procedure program of user selection to temperature control panel 3, the adjustment on temperature control panel 3 surfaces is arrived for example 20 ℃ of this temperature.In addition, from exhausr port 45 with attract mouthful 36,37 exhausts, and utilize well heater 59 that the adjustment of container handling 5 inwalls is for example identical with the temperature of the development atmosphere gas that supplies to wafer W temperature with the air capacity of regulation.
Next, transfer unit 21 is to keep by the state of the heat-treated wafer W of the heating arrangement of previous stage, enter in the housing 11 (Fig. 7 (a)) via delivery port 12, then descend and this wafer W is handed off on the coldplate 15, this transfer unit 21 retreats (Fig. 7 (b)) afterwards.Coldplate 15 on one side cool wafers W is advanced to temperature control panel 3 tops on one side.Be controlled as the temperature higher than the dewfall point that supplies to the development steam in the container handling 5, for example 50 ℃ by the temperature of the wafer W of this coldplate 15 coolings.
When utilizing coldplate 15 that wafer W is transported to temperature control panel 3 top, lifter pin 42 is risen keep wafer W(Fig. 7 (c)).Coldplate 15 moves back (Fig. 8 (a)) to delivery port 12 rear flank, lifter pin 42 is descended, and wafer W is loaded on the temperature control panel 3.The central portion of wafer W, circumference are attracted respectively mouthful 36,37 attractions, and the whole back side of wafer W and the surface of temperature control panel 3 are close to, thereby the temperature that makes wafer W integral body is adjusted to the temperature identical with the surface temperature of temperature control panel 3, and container handling 5 is descended and formation processing space S (Fig. 8 (b)).
Utilize development atmosphere gas heating part 56 to generate and comprise the development atmosphere gas of development mist and development steam, and supply to the processing space S.Development mist in the development atmosphere gas is attached on the wafer W, and the developer solution that is included in the development steam is cooled and dewfall on wafer W surface, thereby form development liquid film 50, when the thickness H 1 of development liquid film 50 becomes the thickness of user's setting (Fig. 8 (c)), stop the supply of above-mentioned development atmosphere gas and from the exhaust of exhausr port 45, the reaction (Fig. 9 (a)) of develop liquid film 50 and resist.
Supply with the above-mentioned development atmosphere gas through after the predefined time to processing space S from beginning, again begin to carry out exhaust and supply with N to processing space S from exhausr port 45
2Gas (Fig. 9 (b)), the development atmosphere gas of processing in the space S is removed by purging, and the surface of wafer W is at N
2Become dry state (Fig. 9 (c)) under the effect of gas.After the wafer W drying, stop N
2The supply of gas, lifter pin 42 are floated wafer W self-temperature-regulating plate 3, and container handling 5 rises and make the processing space S open (Figure 10 (a)) to outside atmosphere.
Then, coldplate 15 moves to temperature control panel 3 tops, and this wafer W is loaded on the coldplate 15, and coldplate 15 moves (Figure 10 (b)) to delivery port 12.Afterwards, transfer unit 21 receives wafer W with the opposite action of the action when being handed off to coldplate 15, and takes out of wafer W from developing apparatus 1.Afterwards, wafer W is transported in the not shown cleaning device, and supplies with cleaning fluid to the surface of this wafer W.Then, in the reaction of resist film place and developer solution and modification part be rinsed, thereby form corrosion-resisting pattern.
Adopt the developing apparatus 1 of the 1st embodiment, the development mist that is included in the development atmosphere gas is attached on the wafer W, and utilize temperature control panel 3 cool wafers W, and make the development steam that is included in the development atmosphere gas at wafer W surface sweating, thereby form development liquid film 50.Therefore, compare with situation from developer solution to wafer W surface that utilize nozzle to supply with, can form the development liquid film on the whole surface of wafer W rapidly, therefore can seek the raising of throughput rate.In addition, in developing apparatus 1, when forming above-mentioned development liquid film, there is no need to supply with a large amount of developer solutions to wafer W, the use amount that therefore can cut down developer solution, and the cost degradation of seeking to process.And, adopt this developing apparatus 1, it is identical to make each one on wafer W surface form time of development liquid film 50, so can make time of each contact development liquid film 50 of wafer W identical.Therefore, can improve the homogeneity of the pattern of each one of wafer W surface.
When wafer W was positioned on the temperature control panel 3, the central portion of wafer W and circumference were attracted mouthful 36,37 attractions in developing apparatus 1, also can make wafer W integral body be close to temperature control panel 3 even therefore exist in the crooked situation at wafer W.Therefore, can regulate the temperature of each one of wafer W surface in high uniformity ground, and further form reliably the high corrosion-resisting pattern of homogeneity.
The 2nd embodiment
Next, the developing apparatus 7 of the 2nd embodiment is illustrated among Figure 11.This developing apparatus 7 is with the difference of developing apparatus 1, does not establish coldplate 15 in developing apparatus 7.For the processing sequence of this developing apparatus 7, except not utilizing coldplate 15 carries, identical with the processing sequence of developing apparatus 1.Utilize Figure 12 that this processing sequence is described simply, at first, directly from transfer unit 21 to lifter pin 42 handing-over wafer W(Figure 12 (a)), identical with the 1st embodiment afterwards, lifter pin 42 is descended and container handling 5 is descended to form the processing space S, wafer W is loaded on the temperature control panel 3.
Then supply with the development atmosphere gas, form (b) of development liquid film 50(Figure 12).From after temperature control panel 3 mounting wafer W begin through the predefined time, supplying with N
2Gas, wafer W surface become dry state.Then, container handling 5 rises, and wafer W is handed off on the transfer unit 21 from lifter pin 42.
In above each embodiment, the maximum particle diameter of development mist for example is below the 50 μ m, and mean grain size for example is below the 10 μ m.By such control particle diameter, the development mist is formed so-called dry fog (Dry Fog), can be suppressed at position beyond the wafer W when carrying out development treatment and be developed liquid and infiltrate.Thus, can suppress the generation of developing defect, particle (Particle).In addition, the formation method of above-mentioned development atmosphere gas is not limited to heat developer solution, also can apply ultrasound wave to developer solution.
In addition, also can be at 56 places, development atmosphere gas heating part the development atmosphere gas be heated to than for example 50 ℃ of the high temperature of the saturation temperature of developer solution, make development mist evaporation, and the development atmosphere gas that only is made of gas that will not comprise this mist supplies to the processing space S.In this case, development liquid film 50 is only partly formed by the dewfall that is included in the development steam in the development atmosphere gas.And for example user and the 1st embodiment are similarly controlled this dewfall amount, can form the development liquid film 50 of desired thickness H1.Below by with the difference of above-mentioned the 1st embodiment centered by, the processing sequence when supplying with such development atmosphere gas describes.
Wafer W is loaded on the temperature control panel 3, and with its adjustment to the temperature below the dewfall point that is included in the development steam in the development atmosphere gas, and form to process space S (Figure 13 (a)).Supply with the development atmosphere gas to processing space S, above-mentioned development steam is at wafer W surface sweating (Figure 13 (b)), when forming the development liquid film 50 of the thickness corresponding with the processing processing procedure program of user selection, the supply of the steam that stops to develop and from the exhaust of exhausr port 45.Afterwards, similarly supply with N with above-mentioned the 1st embodiment
2Gas is removed and is processed the development atmosphere gas in the space S and make wafer W dry.
The development atmosphere gas that will not comprise like this development mist supplies in the situation of wafer W, also can access the effect same with each above-mentioned embodiment.In the situation of supplying with above-mentioned development atmosphere gas, also can be when forming the processing space S, lifter pin 42 is so that the state that wafer W self-temperature-regulating plate 3 floats keeps this wafer W, after in processing space S, having supplied with the development atmosphere gas, wafer W is loaded cool wafers W on the temperature control panel 3, thereby form development liquid film 50.In addition, in the situation of utilizing such development atmosphere gas to process, for example also can make wafer W self-temperature-regulating plate 3 come-ups by lifter pin 42, utilize to remain in the next dry wafer W of the heat of processing the development steam in the space S, development treatment is stopped.
When in above-mentioned each example, making wafer W dry, for example in above-mentioned treatment process, also can be after wafer W forms development liquid film 50, when beginning through the predefined time from wafer W being loaded temperature control panel 3, container handling 5 is risen, make and process space S and open to outside atmosphere.The air of container handling 5 outsides is flowed around wafer W, the dividing potential drop of wafer W development steam is on every side reduced, the vapor pressure of development liquid film 50 is reduced.As a result, the evaporation of the liquid component of development liquid film 50, and make wafer W surface become dry state.In addition, such state that makes wafer W drying refers to, removed the state that consists of the liquid component of developer solution, and other compositions of formation developer solution can be attached on the wafer W.When removing the aforesaid liquid composition, the reaction of developer solution and resist will stop this phenomenon and can utilize evaluation test described later to confirm.
In each embodiment, by the well heater 59 of set handling container 5, can prevent reliably further that developer solution is attached on the container handling 5 and becomes particle, but also such well heater 59 can be set.For example will be developed the N of atmosphere gas heating part 56 heating
2Gas supplies to separately processes in the space S inwall of heat treated container 5.Thus, also the temperature of above-mentioned inwall can be controlled to be the high temperature of temperature than development steam dewfall, afterwards, supply with above-mentioned development atmosphere gas.
In each embodiment, utilized nozzle 53 when processing in the space S in that development steam and development mist are supplied to, but be not limited to utilize like this situation of nozzle.Also can for example be provided with the sheet metal 83 that is formed with many holes 82 at peristome 54 as shown in Figure 14, via this hole 82 the development atmosphere gas be supplied to and process in the space S.
Evaluation test
Utilize nozzle to supply with developer solution to the wafer W1 that has applied the pattern exposure of stipulating in resist and edge～wafer W3 respectively.For wafer W1, the cross section of the resist behind the supply developer solution is taken.For wafer W2, take supplying with behind the developer solution again to the cross section that this wafer W2 has supplied with two seconds resists after the cleaning fluid.For wafer W3, take supplying with behind the developer solution again to the cross section that this wafer W3 has supplied with 13 seconds resists after the cleaning fluid.In addition, change and be coated in the kind of the resist on each wafer W1～W3, and carried out same test.
Figure 15 represents the result of this evaluation test 1.(a)～(c) of Figure 15 is the shooting results that has used the wafer W1～W3 of mutually the same resist, and (d)～(f) of Figure 15 is the shooting results that has used the wafer W1～W3 of mutually the same resist.No matter be the situation of having used any resist, the wafer W1 that does not supply with cleaning fluid is not carried out the pattern exploring.With respect to this, wafer W2, the W3 that has supplied with cleaning fluid carried out the pattern exploring.
From this test findings as can be known, the resist that has exposed is not in the stage of supplying with developer solution but begins elution in the stage of supplying with cleaning fluid.That is not to utilize developer solution to wash in a pan out lysed residue as can be known.Therefore, can think when carrying out development treatment, even also can on a small quantity to the developer solution of resist supply.According to this test, the inventor has expected by making the developer solution dewfall in the development steam on wafer W surface as the respective embodiments described above, and to wafer W surface supply development mist, has formed the film of developer solution.
Evaluation test 2
Prepared the wafer W1, the W2 that have similarly exposed with evaluation test 1.Wafer W1 is loaded on the rotary chuck (Spin chuck), Yi Bian and utilize this rotary chuck to rotate around vertical axes, Yi Bian supply with developer solution from nozzle.When supplying with developer solution the supply position of this developer solution is radially moved from the circumference of wafer W1 to central part, supply with continuously afterwards the developer solution of stipulated time to central part.After developer solution is supplied with, supply with cleaning fluid to wafer W1 and remove developer solution, and the cross section of resist is taken.
In addition, wafer W2 is transported in the container handling that is made of container body and loam cake.In closing loam cake, container handling, form after the airtight processing space, on one side exhaust is carried out in this processing space, similarly the development mist is supplied to the 1st embodiment on one side and process in the space, form processing atmosphere.After the development mist is supplied with, supply with cleaning fluid to wafer W2 and remove developer solution, and the cross section of resist is taken.
The (a) and (b) of Figure 16 represent the shooting results of wafer W1, the shooting results of (c) of Figure 16, (d) expression wafer W2.The shape of the pattern that forms at wafer W1, W2 like this there is no and finds differences.This test has represented to utilize the situation of the developer solution that is the mist shape also can similarly develop with the situation of supplying with developer solution from nozzle.
Many the wafer W that similarly exposed with evaluation test 1,2 have been prepared.In the container handling that is consisted of by container body and loam cake, carry wafer W successively in order, closing after loam cake forms airtight processing space, on one side exhaust is carried out in this processings space, one side is supplied with above-mentioned development mist to this processing space and is formed processing atmosphere.The service time that changes the development mist of each wafer W was respectively 45 seconds, 60 seconds, 90 seconds.After the development mist is supplied with, open loam cake the processing space is opened to outside atmosphere, take out afterwards wafer W, and this wafer has been carried out cleaning treatment.Then, calculate each position in each wafer W surface corrosion-resisting pattern CD mean value and calculated index 3 σ as the deviation of this CD for this CD.Be that 45 seconds, 60 seconds, 90 seconds test is respectively as evaluation test 3-1,3-2,3-3 with the service time of development mist.
Evaluation test 4
Similarly supply with developer solution from nozzle with evaluation test 2, also similarly calculate mean value and 3 σ of the CD of the wafer W that has carried out cleaning treatment with evaluation test 3.Change the service time from the developer solution of nozzle of each wafer W.Press this service time order from short to long respectively as evaluation test 4-1,4-2,4-3.
Make to have distolaterally distolaterally move while spray developer solution to another along the nozzle of the ejiction opening that radially extends of wafer W from wafer W, carry out cleaning treatment afterwards and wafer W is carried out quiet liquid development.Changing the service time of the developer solution of each wafer W, is that 30 seconds, 60 seconds test is respectively as evaluation test 5-1,5-2 with this service time.
Figure 17 represents the result of evaluation test 3～5.The mean value of the CD of each evaluation test of histogram graph representation among the figure, the point among the figure represents 3 σ of each evaluation test.From this result as can be known, the situation of supplying with developer solution in the mode of development mist is also same with the situation of utilizing nozzle supply developer solution, and when the service time of developer solution was elongated, the mean value of CD diminished.In addition, for 3 σ, supplying with the situation of developer solution and utilize nozzle to supply with between the situation of developer solution in the mode of development mist does not have large difference.The result of these evaluation tests has represented to utilize the development of development mist to compare with the development that utilizes nozzle to supply with developer solution, does not bring larger impact to pattern form.
Evaluation test 6
Identical with evaluation test 3, on one side exhaust is carried out in the processing space of moving into the wafer W that has exposed, process the space to this on one side and supply with the development mist.The service time of development mist is made as 30 seconds.After the supply of development mist stops, making and process the space and open and make wafer W dry tack free to outside atmosphere, carry out afterwards the cleaning treatment of wafer W.Then, similarly calculate the mean value of CD of corrosion-resisting pattern and 3 σ of CD with evaluation test 3.Playing the time of processing till the space opening when supply from the development mist of setting each wafer W stops to be respectively 30 seconds, 180 seconds.The time till this opening of will arriving be 30 seconds test as evaluation test 6-1, the time till this opening is that 180 seconds test is as evaluation test 6-2.
In addition, the service time of development mist was made as 60 seconds and carries out the test same with evaluation test 6-1,6-2.The time of playing when the supply from the development mist of changing each wafer W stops till the above-mentioned processing space opening was respectively 0 second, 30 seconds, 180 seconds.The time till this opening of will arriving is that 0 second, 30 seconds, 180 seconds test is respectively as evaluation test 6-3,6-4,6-5.
Figure 18 represents the result of evaluation test 6.The mean value of histogram graph representation CD among the figure, the point among the figure represents 3 σ of CD.6-1～6-4 compares with evaluation test, and 3 σ are larger in evaluation test 6-5.That is, the deviation of the CD of pattern is larger in evaluation test 6-5.In addition, along with the time till the open treated space is elongated, the mean value of CD diminishes.Can think that its reason is, even the supply of the mist that stops to develop also can make the wafer W surface can be dry by remaining in the effect of processing the development mist in the space, but proceed to develop.From the result of this evaluation test 6 as can be known, the shape of pattern is subject to until the time effects of wafer W drying.
Identical with evaluation test 3, on one side exhaust is carried out in the processing space of moving into the wafer W that has exposed, process the space to this on one side and supply with the development mist.The service time of development mist is made as 60 seconds.After the supply of development mist stopped, the open treated space made wafer W dry tack free, carried out afterwards the cleaning treatment of wafer W.Set each wafer W from the open treated space time play the time of carrying out till the cleaning treatment and be respectively 10 seconds, 45 seconds, 90 seconds, 180 seconds, 600 seconds.After the cleaning treatment, similarly calculate the mean value of CD of corrosion-resisting pattern and 3 σ of CD with evaluation test 3.The test that to arrive the time of carrying out till the cleaning treatment and be 10 seconds, 45 seconds, 90 seconds, 180 seconds, 600 seconds is respectively as evaluation test 7-1,7-2,7-3,7-4,7-5.
Figure 19 represents the result of evaluation test 7.The mean value of histogram graph representation CD among the figure, the point among the figure represents 3 σ of CD.The mean value of CD and 3 σ do not have large change in each evaluation test.Therefore, playing as can be known the time of carrying out till the cleaning treatment when carrying out wafer W dry does not bring large impact to the shape of pattern.Therefore, confirmed as described above after making wafer W dry tack free, this wafer W to be transported to cleaning device and to carry out cleaning treatment.
Claims (10)
1. developing apparatus, this developing apparatus is the developing apparatus that the substrate that has exposed is developed, and it is characterized in that, comprising:
Airtight container handling, it is used to form processing atmosphere;
Temperature control panel, it is located in the above-mentioned container handling, is used for the mounting substrate;
The atmosphere gas supply unit, the atmosphere gas that comprises developer solution mist and developer solution steam is supplied with on its surface for the substrate in above-mentioned container handling;
The 1st temperature adjustment part, it is used for the temperature of above-mentioned temperature control panel is adjusted into the temperature of above-mentioned atmosphere gas dewfall on substrate; With
Temperature setting portion, this temperature setting portion is set the temperature of described temperature control panel by above-mentioned the 1st temperature adjustment part, so that the thickness of the liquid film of the developer solution on aforesaid substrate surface becomes the thickness corresponding with the processing processing procedure program of substrate,
The temperature of the inwall of above-mentioned container handling is maintained the temperature that above-mentioned atmosphere gas is difficult to dewfall on this inwall.
2. developing apparatus according to claim 1 is characterized in that,
This developing apparatus also comprises the 2nd temperature adjustment part, and the 2nd temperature adjustment part is used for the temperature of the inwall of above-mentioned container handling is maintained the temperature that above-mentioned developer solution steam is difficult to dewfall on this inwall.
3. developing apparatus according to claim 1 and 2 is characterized in that,
Above-mentioned temperature control panel comprises for the lip-deep adsorbing mechanism of substrate adsorption at this temperature control panel.
4. developing apparatus according to claim 1 and 2 is characterized in that,
Above-mentioned atmosphere gas comprises the developer solution steam and replaces and comprise developer solution mist and developer solution steam.
5. developing apparatus according to claim 1 and 2 is characterized in that,
Above-mentioned atmosphere gas supply unit comprises the heater block for heating atmosphere gas.
6. developing apparatus according to claim 4 is characterized in that,
Above-mentioned atmosphere gas supply unit comprises the heater block for heating atmosphere gas, and atmosphere gas is heated to the temperature higher than the saturation temperature of the developer solution in the heating atmosphere by above-mentioned heater block.
7. developing method, this developing method is the developing method that the substrate that has exposed is developed, and it is characterized in that, comprising:
To forming the operation of moving into substrate in the airtight container handling of processing atmosphere;
Supply with the operation of the atmosphere gas that comprises developer solution mist and developer solution steam to the surface of moving into the substrate in the processing container;
The temperature that is located in the container handling and be used for the temperature control panel of mounting substrate is adjusted into the operation of above-mentioned developer solution steam below the temperature of dewfall on the substrate;
With substrate-placing on above-mentioned temperature control panel and make above-mentioned developer solution steam dewfall and utilize above-mentioned developer solution mist and this dewfall partly to form the operation of the liquid film of developer solution; With
Set the temperature of described temperature control panel, so that the thickness of the liquid film of the developer solution on the surface of aforesaid substrate becomes the operation of the thickness corresponding with the processing processing procedure program of substrate,
The temperature of the inwall of above-mentioned container handling is maintained the temperature that above-mentioned developer solution steam is difficult to dewfall on this inwall.
8. developing method according to claim 7 is characterized in that,
Above-mentioned atmosphere gas comprises the developer solution steam and replaces and comprise developer solution mist and developer solution steam.
9. according to claim 7 or 8 described developing methods, it is characterized in that,
This developing method also comprises the operation of utilizing heater block that above-mentioned atmosphere gas is heated.
10. developing method according to claim 8 is characterized in that,
This developing method also comprises the operation of utilizing heater block that above-mentioned atmosphere gas is heated,
Atmosphere gas is heated to the temperature higher than the saturation temperature of the developer solution in the heating atmosphere.
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| DE102008041250A1 (en) * | 2008-08-13 | 2010-02-25 | Ers Electronic Gmbh | Method and device for the thermal processing of plastic discs, in particular mold wafers |
| JP5003773B2 (en) | 2010-02-15 | 2012-08-15 | 東京エレクトロン株式会社 | Developing device, developing method, and storage medium |
| JP5067432B2 (en) * | 2010-02-15 | 2012-11-07 | 東京エレクトロン株式会社 | Coating, developing device, developing method, and storage medium |
| JP6223839B2 (en) * | 2013-03-15 | 2017-11-01 | 東京エレクトロン株式会社 | Substrate liquid processing method, substrate liquid processing apparatus, and storage medium |
| CN103472692A (en) * | 2013-08-09 | 2013-12-25 | 句容骏成电子有限公司 | Developing tank |
| JP6240440B2 (en) * | 2013-08-30 | 2017-11-29 | 東京応化工業株式会社 | Chamber apparatus and heating method |
| JP6081904B2 (en) * | 2013-11-29 | 2017-02-15 | 東京エレクトロン株式会社 | Development processing apparatus, development processing method, program, and computer storage medium |
| MX2017003776A (en) | 2014-09-24 | 2018-03-23 | Princeton Identity Inc | Control of wireless communication device capability in a mobile device with a biometric key. |
| JP6341035B2 (en) | 2014-09-25 | 2018-06-13 | 東京エレクトロン株式会社 | Substrate liquid processing method, substrate liquid processing apparatus, and storage medium |
| US10213682B2 (en) | 2015-06-15 | 2019-02-26 | Activision Publishing, Inc. | System and method for uniquely identifying physical trading cards and incorporating trading card game items in a video game |
| WO2017123702A1 (en) | 2016-01-12 | 2017-07-20 | Princeton Identity, Inc. | Systems and methods biometric analysis |
| WO2017173228A1 (en) | 2016-03-31 | 2017-10-05 | Princeton Identity, Inc. | Biometric enrollment systems and methods |
| US10373008B2 (en) | 2016-03-31 | 2019-08-06 | Princeton Identity, Inc. | Systems and methods of biometric analysis with adaptive trigger |
| US10607096B2 (en) | 2017-04-04 | 2020-03-31 | Princeton Identity, Inc. | Z-dimension user feedback biometric system |
| CN107422609A (en) * | 2017-05-25 | 2017-12-01 | 昆山国显光电有限公司 | The development householder method and equipment of a kind of photoetching |
| WO2019023032A1 (en) | 2017-07-26 | 2019-01-31 | Princeton Identity, Inc. | Biometric security systems and methods |
| JP6981092B2 (en) * | 2017-08-10 | 2021-12-15 | 東京エレクトロン株式会社 | Liquid treatment equipment |
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| JP2003197508A (en) * | 2001-12-27 | 2003-07-11 | Tokyo Ohka Kogyo Co Ltd | Developing device and developing method |
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| JP5003773B2 (en) * | 2010-02-15 | 2012-08-15 | 東京エレクトロン株式会社 | Developing device, developing method, and storage medium |
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