TWI761687B - Reduced pressure drying apparatus, substrate processing apparatus, and reduced pressure drying method - Google Patents
Reduced pressure drying apparatus, substrate processing apparatus, and reduced pressure drying method Download PDFInfo
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Abstract
本發明提供一種於排氣量較小之情形時亦能夠精度良好地調整減壓速度之技術。 The present invention provides a technology that can accurately adjust the decompression speed even when the exhaust volume is small.
於該減壓乾燥裝置1中,將腔室20內與泵30連接之排氣配管部40具有於腔室20與泵30之間並列配置之大徑配管44及小徑配管45。小徑配管45與大徑配管44相比管徑較小。控制部60於減壓乾燥處理中可切換為如下模式:小徑閥控制模式,其係將大徑閥440之開度固定並且調整小徑閥450之開度;及大徑閥控制模式,其係調整大徑閥440之開度。藉此,於減壓排氣量較小之情形時,能夠調整小徑閥之開度而精度良好地調整流路面積。於減壓排氣量較大之情形時,可調整能夠大範圍調整流路面積之大徑閥之開度而應答性良好地調整減壓速度。 In this decompression drying apparatus 1, the exhaust piping part 40 which connects the pump 30 in the chamber 20 has the large diameter piping 44 and the small diameter piping 45 arrange|positioned in parallel between the chamber 20 and the pump 30. The small-diameter piping 45 has a smaller diameter than the large-diameter piping 44 . The control unit 60 can be switched to the following modes in the decompression drying process: a small-diameter valve control mode, which fixes the opening of the large-diameter valve 440 and adjusts the opening of the small-diameter valve 450; and a large-diameter valve control mode, which It is used to adjust the opening of the large diameter valve 440. Thereby, when the decompression exhaust volume is small, the opening degree of the small-diameter valve can be adjusted, and the flow path area can be adjusted accurately. When the decompression exhaust volume is large, the opening degree of the large-diameter valve that can adjust the flow path area in a wide range can be adjusted, and the decompression speed can be adjusted with good responsiveness.
Description
本發明係關於一種將附著有處理液之基板進行減壓乾燥之技術。 The present invention relates to a technique for drying under reduced pressure a substrate on which a treatment liquid is attached.
習知,於半導體晶圓、液晶顯示裝置或有機EL(Electroluminescence,電致發光)顯示裝置等FPD(Flat Panel Display,平板顯示器)用基板、光罩用玻璃基板、彩色濾光片用基板、記錄碟片用基板、太陽能電池用基板、電子紙用基板等精密電子裝置用基板之製造步驟中,為了使塗佈於基板之處理液乾燥,使用減壓乾燥裝置。此種減壓乾燥裝置具有收容基板之腔室、及將腔室內之氣體排出之排氣裝置。關於習知之減壓乾燥裝置,例如記載於專利文獻1中。
Conventionally, substrates for FPD (Flat Panel Display) such as semiconductor wafers, liquid crystal display devices or organic EL (Electroluminescence) display devices, glass substrates for masks, substrates for color filters, recording In the manufacturing steps of substrates for precision electronic devices such as substrates for discs, substrates for solar cells, and substrates for electronic paper, a vacuum drying apparatus is used in order to dry the treatment liquid applied to the substrates. Such a vacuum drying apparatus has a chamber for accommodating the substrate, and an exhaust device for discharging the gas in the chamber. About a conventional vacuum drying apparatus, it describes in
於使塗佈於基板之光阻抗蝕劑等處理液乾燥而形成薄膜之情形時,若進行急遽之減壓,則有產生爆沸之虞。爆沸係因塗佈於基板表面之光阻抗蝕劑中之溶劑成分急遽地蒸發而產生。若於減壓乾燥處理中產生爆沸,則產生於光阻抗蝕劑之表面形成小氣泡之脫泡現象。因此,於減壓乾燥處理中,必須於初始階段不使腔室內急遽地減壓而階段性地進行減壓。 When a process liquid, such as photoresist applied to a board|substrate, is dried to form a thin film, there exists a possibility that bumping may generate|occur|produce if a rapid pressure reduction is performed. Bumping is caused by the rapid evaporation of the solvent component in the photoresist coated on the surface of the substrate. If bumping occurs during the drying treatment under reduced pressure, the defoaming phenomenon in which small bubbles are formed on the surface of the photoresist will occur. Therefore, in the reduced-pressure drying process, it is necessary to gradually reduce the pressure in the chamber without rapidly reducing the pressure in the initial stage.
[專利文獻1]日本專利特開2006-261379號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2006-261379
為了階段性地變更腔室內之壓力,必須調整減壓速度。於專利文獻1記載之減壓乾燥裝置中,在減壓處理中,一面將腔室內之氣體排氣,一面向腔室內供給惰性氣體,藉此調整減壓速度。又,為了適當地調整減壓速度,於惰性氣體之供給源與腔室之間設置有能夠將開度變更為複數個階段之閥。又,作為調整腔室內之減壓速度之其他方法,亦可於腔室與排氣裝置之間設置能夠將開度變更為複數個階段之閥而調整來自腔室之排氣量。於該情形時,能夠階段性地調整來自腔室之排氣量。
In order to change the pressure in the chamber stepwise, it is necessary to adjust the decompression speed. In the decompression drying apparatus described in
於變更閥之開度而調整來自腔室之排氣量之情形時,排氣量由閥中之流路面積決定。無關於開度之大小,閥之開度之調整精度大致固定。即,於開度較大而排氣量較大之情形、及開度較小而排氣量較小之情形時,排氣量之調整精度大致固定。然而,如上述減壓乾燥處理之初始階段般,有於排氣量較小時希望精度特佳地調整減壓速度之要求。 When changing the valve opening to adjust the exhaust volume from the chamber, the exhaust volume is determined by the flow path area in the valve. Regardless of the size of the opening, the adjustment accuracy of the valve opening is roughly constant. That is, when the opening degree is large and the displacement volume is large, and when the opening degree is small and the displacement volume is small, the adjustment accuracy of the displacement volume is substantially constant. However, as in the initial stage of the decompression drying process described above, when the exhaust gas volume is small, it is required to adjust the decompression speed with particularly good accuracy.
本發明係鑒於此種情況而完成者,其目的在於提供一種於具有能夠變更開度之閥之減壓乾燥裝置中,在排氣量較小之情形時亦能夠精度良好地調整減壓速度之技術。 The present invention has been made in view of such a situation, and an object of the present invention is to provide a vacuum drying apparatus having a valve whose opening degree can be changed, which can accurately adjust the decompression speed even when the exhaust volume is small. technology.
為了解決上述課題,本案之第1發明係一種減壓乾燥裝置,其係將附著有處理液之基板進行減壓乾燥者;其具有:腔室,其收容上述基板,且於上述基板之周圍形成處理空間;泵,其將上述腔室內之氣體進行抽吸排氣;排氣配管部,其將上述腔室內與上述泵進行流路連接;及控制部,其控制各部之動作;上述排氣配管部包含:大徑配管,其介插有大徑閥;及小徑配管,其介插有管徑較上述大徑閥小之小徑閥;上述大徑閥及上述小徑閥分別可藉由變更開度而變更配管內之流路面積,上述大徑配管與上述小徑配管係於上述腔室與上述泵之間並列配置,上述控制部於減壓乾燥處理中可切換為如下模式:小徑閥控制模式,其係將上述大徑閥之開度固定並且調整上述小徑閥之開度;及大徑閥控制模式,其係調整上述大徑閥之開度。 In order to solve the above-mentioned problems, the first invention of the present application is a vacuum drying apparatus for drying a substrate to which a processing liquid is attached under reduced pressure, comprising: a chamber for accommodating the above-mentioned substrate and formed around the above-mentioned substrate a processing space; a pump for sucking and exhausting the gas in the chamber; an exhaust piping part for connecting the chamber with the pump; and a control part for controlling the operation of each part; the exhaust piping The part includes: large-diameter piping, which is interposed with a large-diameter valve; and small-diameter piping, which is interposed with a small-diameter valve whose pipe diameter is smaller than that of the above-mentioned large-diameter valve; the above-mentioned large-diameter valve and the above-mentioned small-diameter valve can be respectively connected by The opening degree is changed to change the flow path area in the piping, the large-diameter piping and the small-diameter piping are arranged in parallel between the chamber and the pump, and the control unit can be switched to the following modes during the vacuum drying process: small Diameter valve control mode, which fixes the opening of the large-diameter valve and adjusts the opening of the small-diameter valve; and large-diameter valve control mode, which adjusts the opening of the large-diameter valve.
本案之第2發明係如第1發明之減壓乾燥裝置,其中,上述控制部於減壓乾燥處理中,先執行上述小徑閥控制模式,其後執行大徑閥控制模式。 The second invention of the present application is the vacuum drying apparatus according to the first invention, wherein the control unit executes the small-diameter valve control mode first, and then executes the large-diameter valve control mode during the vacuum drying process.
本案之第3發明係如第1發明或第2發明之減壓乾燥裝置,其中,上述小徑閥控制模式包含將上述大徑閥關閉之第1小徑閥控制模式。 The third invention of the present application is the vacuum drying apparatus according to the first or second invention, wherein the small-diameter valve control mode includes a first small-diameter valve control mode in which the large-diameter valve is closed.
本案之第4發明係如第1發明至第3發明中任一發明之減壓乾燥裝置,其中,上述小徑閥控制模式包含將上述大徑閥之開度固定之第2小徑閥控制模式。 The fourth invention of the present application is the vacuum drying apparatus according to any one of the first to third inventions, wherein the small-diameter valve control mode includes a second small-diameter valve control mode in which the opening degree of the large-diameter valve is fixed .
本案之第5發明係如第1發明至第4發明中任一發明之減壓乾燥裝置,其中,上述排氣配管部進而包含:複數個腔室連接配管,其等係一端於上述腔室內開口;及第1共通配管,其與所 有上述腔室連接配管之另一端直接或間接地流路連接;上述大徑配管之上游側端部及上述小徑配管之上游側端部分別流路連接於上述第1共通配管。 A fifth invention of the present application is the decompression drying apparatus according to any one of the first to fourth inventions, wherein the exhaust piping portion further includes a plurality of chamber connecting pipes, one end of which is open in the chamber. ; and the first common piping, which is The other end of the chamber connection pipe is directly or indirectly connected to the flow path, and the upstream end of the large diameter pipe and the upstream end of the small diameter pipe are respectively flow connected to the first common pipe.
本案之第6發明係如第1發明至第5發明中任一發明之減壓乾燥裝置,其中,具有複數個上述泵,上述排氣配管部進而包含與所有上述泵直接或間接地流路連接之第2共通配管,上述大徑配管之下游側端部及上述小徑配管之下游側端部分別流路連接於上述第2共通配管。 The sixth invention of the present application is the vacuum drying apparatus according to any one of the first to fifth inventions, wherein a plurality of the pumps are provided, and the exhaust piping portion further includes a flow path connected directly or indirectly to all the pumps. In the second common piping, the downstream end portion of the large-diameter piping and the downstream end portion of the small-diameter piping are connected to the second common piping through flow paths, respectively.
本案之第7發明係如第1發明至第6發明中任一發明之減壓乾燥裝置,其中,上述排氣配管部所具有之上述大徑配管為複數個,且上述排氣配管部所具有之上述小徑配管為1個。 The seventh invention of the present application is the vacuum drying apparatus according to any one of the first to sixth inventions, wherein the large-diameter pipes included in the exhaust piping portion are plural, and the exhaust piping portion has a plurality of pipes. The above-mentioned small diameter piping is one.
本案之第8發明係一種基板處理裝置,其係對上述基板進行抗蝕劑液之塗佈與顯影者;其具有:塗佈部,其將上述抗蝕劑液塗佈於曝光處理前之上述基板;如第1發明至第7發明中任一發明之減壓乾燥裝置,其將附著有上述抗蝕劑液之上述基板進行減壓乾燥;及顯影部,其對實施上述曝光處理後之上述基板進行顯影處理。 The eighth invention of the present application is a substrate processing apparatus which performs application and development of a resist liquid on the substrate; and includes a coating section for applying the resist liquid on the above-mentioned substrate before exposure treatment. A substrate; the vacuum drying apparatus according to any one of the first to seventh inventions, which dries the substrate to which the resist liquid is adhered under reduced pressure; The substrate is developed.
本案之第9發明係一種減壓乾燥方法,其係自收容有附著有處理液之基板之腔室內,經由排氣配管部而利用泵對氣體進行抽吸排氣,藉此對上述腔室內進行減壓而使上述基板乾燥者;上述排氣配管部包含介插有大徑閥之大徑配管、及介插有管徑較上述大徑閥小之小徑閥之小徑配管,根據減壓處理之進行而切換如下步驟:a)進行利用上述泵之抽吸排氣,並且將上述大徑閥之開度固定並調整上述小徑閥之開度之步驟;及b)進行利用上述泵之抽吸排 氣,並且調整上述大徑閥之開度之步驟。 The ninth invention of the present application is a drying method under reduced pressure, in which a gas is sucked and exhausted by a pump through an exhaust piping portion from a chamber in which a substrate to which a processing liquid has adhered is accommodated, and thereby the drying process in the chamber is performed. When depressurizing and drying the substrate; the exhaust piping portion includes large-diameter piping interposed with a large-diameter valve, and small-diameter piping interposed with a small-diameter valve smaller than the large-diameter valve, according to the decompression The processing is performed by switching to the following steps: a) performing suction and exhaust using the above-mentioned pump, and fixing the opening degree of the above-mentioned large-diameter valve and adjusting the opening degree of the above-mentioned small-diameter valve; and b) carrying out the step of using the above-mentioned pump suction row air, and adjust the opening of the large-diameter valve above.
本案之第10發明係如第9發明之減壓乾燥方法,其中,於上述減壓處理之最初進行上述步驟a),其後進行步驟b)。 The tenth invention of the present application is the drying method under reduced pressure according to the ninth invention, wherein the above-mentioned step a) is carried out at the beginning of the above-mentioned reduced-pressure treatment, and then the step b) is carried out.
根據本案之第1發明至第10發明,於小徑閥控制模式下,藉由調整小徑閥之開度,能夠精度良好地調整流路面積而接近所期望之減壓速度。另一方面,於大徑閥控制模式下,藉由調整能夠以較大範圍調整流路面積之大徑閥之開度,能夠應答性良好地調整減壓速度。 According to the first to tenth inventions of the present application, in the small-diameter valve control mode, by adjusting the opening degree of the small-diameter valve, the flow path area can be accurately adjusted to approach a desired decompression speed. On the other hand, in the large-diameter valve control mode, by adjusting the opening degree of the large-diameter valve that can adjust the flow path area in a wide range, the decompression speed can be adjusted with good responsiveness.
尤其是,根據本案之第2發明及第10發明,於減壓處理之初始階段,藉由調整小徑閥之開度,能夠精度良好地調整流路面積而接近所期望之減壓速度。另一方面,於減壓處理之最終階段,藉由調整能夠大範圍調整流路面積之大徑閥之開度,能夠應答性良好地調整減壓速度。 In particular, according to the second and tenth inventions of the present application, by adjusting the opening degree of the small diameter valve in the initial stage of the decompression treatment, the flow path area can be accurately adjusted to approach a desired decompression rate. On the other hand, in the final stage of the decompression treatment, by adjusting the opening degree of the large-diameter valve that can adjust the flow channel area in a wide range, the decompression speed can be adjusted with good responsiveness.
尤其是,根據本案之第5發明,於開口為複數個之情形時,藉由第1共通配管與所有開口連接,能夠使來自所有開口之抽吸排氣力均勻。 In particular, according to the fifth invention of the present application, when there are a plurality of openings, the first common pipe is connected to all the openings, so that the suction and exhaust force from all the openings can be made uniform.
尤其是,根據本案之第6發明,於泵為複數個之情形時,藉由第2共通配管與所有泵連接,能夠使所有大徑配管及小徑配管之下游側之抽吸排氣壓力均勻。 In particular, according to the sixth invention of the present application, when there are a plurality of pumps, the second common pipe is connected to all the pumps, so that the suction and discharge pressures on the downstream side of all the large-diameter pipes and the small-diameter pipes can be made uniform. .
尤其是,根據本案之第7發明,於腔室之容量較大之情形時,能夠不使小徑配管中之流路面積之調整精度降低而增大排氣配管部中之最大流路面積。 In particular, according to the seventh invention of the present application, when the capacity of the chamber is large, the maximum flow path area in the exhaust piping portion can be increased without lowering the adjustment accuracy of the flow path area in the small diameter piping.
1‧‧‧減壓乾燥裝置 1‧‧‧Decompression drying device
9‧‧‧基板處理裝置 9‧‧‧Substrate processing equipment
20、20A、20B、20C‧‧‧腔室 20, 20A, 20B, 20C‧‧‧chamber
21‧‧‧基座部 21‧‧‧Pedestal
22‧‧‧蓋部 22‧‧‧Cover
23、23A、23B‧‧‧排氣口 23, 23A, 23B‧‧‧Exhaust port
24‧‧‧支撐機構 24‧‧‧Supporting mechanism
25‧‧‧壓力感測器 25‧‧‧Pressure sensor
30、30A、30B、30C‧‧‧泵 30, 30A, 30B, 30C‧‧‧Pump
40、40A、40B、40C‧‧‧配管部 40, 40A, 40B, 40C‧‧‧Piping
41、41A、41B、41C‧‧‧腔室連接配管 41, 41A, 41B, 41C‧‧‧chamber connection piping
42、42C‧‧‧集合配管 42, 42C‧‧‧Assembly piping
43、43A、43C‧‧‧第1共通配管 43, 43A, 43C‧‧‧First common piping
44、44A、44B、44C‧‧‧大徑配管 44, 44A, 44B, 44C‧‧‧Large diameter piping
45、45A、45B、45C‧‧‧小徑配管 45, 45A, 45B, 45C‧‧‧Small diameter piping
46、46A、46C‧‧‧第2共通配管 46, 46A, 46C‧‧‧Second common piping
47、47A、47B、47C‧‧‧排氣配管 47, 47A, 47B, 47C‧‧‧Exhaust piping
48、48A‧‧‧個別排氣配管 48, 48A‧‧‧Individual exhaust piping
50‧‧‧惰性氣體供給部 50‧‧‧Inert Gas Supply Section
51‧‧‧惰性氣體供給配管 51‧‧‧Inert gas supply piping
52‧‧‧惰性氣體供給源 52‧‧‧Inert gas supply source
53‧‧‧開關閥 53‧‧‧On-off valve
60‧‧‧控制部 60‧‧‧Control
61‧‧‧運算處理部 61‧‧‧Operation Processing Department
62‧‧‧記憶體 62‧‧‧Memory
63‧‧‧儲存部 63‧‧‧Storage
70‧‧‧輸入部 70‧‧‧Input
90‧‧‧搬入部 90‧‧‧Moving in
91‧‧‧洗淨部 91‧‧‧Cleaning Department
92‧‧‧去水烘烤部 92‧‧‧Dewatering and baking section
93‧‧‧塗佈部 93‧‧‧Coating Department
94‧‧‧預烘烤部 94‧‧‧Pre-baking Section
95‧‧‧曝光部 95‧‧‧Exposure Department
96‧‧‧顯影部 96‧‧‧Development Department
97‧‧‧淋洗部 97‧‧‧Shower
98‧‧‧後烘烤部 98‧‧‧Post-baking
99‧‧‧搬出部 99‧‧‧Removal Department
221‧‧‧密封材 221‧‧‧Sealing material
241‧‧‧支撐板 241‧‧‧Support plate
242‧‧‧支撐銷 242‧‧‧Support pin
243‧‧‧支撐柱 243‧‧‧Support column
440、440A、440B、440C‧‧‧大徑閥 440, 440A, 440B, 440C‧‧‧Large diameter valve
450、450A、450B、450C‧‧‧小徑閥 450, 450A, 450B, 450C‧‧‧Small diameter valve
G‧‧‧基板 G‧‧‧Substrate
R‧‧‧目標減壓波形 R‧‧‧Target decompression waveform
T1‧‧‧第1期間 T1‧‧‧First Period
T2‧‧‧第2期間 T2‧‧‧Second period
T3‧‧‧第3期間 T3‧‧‧3rd period
T4‧‧‧第4期間 T4‧‧‧4th period
T5‧‧‧第5期間 T5‧‧‧5th period
圖1係表示第1實施形態之基板處理裝置之構成之概略圖。 FIG. 1 is a schematic diagram showing the structure of a substrate processing apparatus according to the first embodiment.
圖2係表示第1實施形態之減壓乾燥裝置之構成之概略圖。 FIG. 2 is a schematic view showing the configuration of the vacuum drying apparatus according to the first embodiment.
圖3係表示第1實施形態之減壓乾燥裝置之配管部之立體構成的立體圖。 FIG. 3 is a perspective view showing a three-dimensional structure of a piping portion of the vacuum drying apparatus according to the first embodiment.
圖4係表示第1實施形態之減壓乾燥處理之流程之流程圖。 FIG. 4 is a flow chart showing the flow of the vacuum drying process in the first embodiment.
圖5係表示第1實施形態之各控制模式下之大徑閥與小徑閥之動作的圖。 FIG. 5 is a diagram showing the operation of the large-diameter valve and the small-diameter valve in each control mode of the first embodiment.
圖6係表示第1實施形態之目標減壓波形之一例之圖。 FIG. 6 is a diagram showing an example of the target decompression waveform in the first embodiment.
圖7係表示一變形例之減壓乾燥裝置之配管部之立體構成的立體圖。 FIG. 7 is a perspective view showing a three-dimensional structure of a piping portion of a vacuum drying apparatus according to a modification.
圖8係表示另一變形例之減壓乾燥裝置之配管部之構成的概略圖。 FIG. 8 is a schematic diagram showing the configuration of a piping portion of a vacuum drying apparatus according to another modification.
圖9係表示另一變形例之減壓乾燥裝置之配管部之構成的概略圖。 FIG. 9 is a schematic diagram showing the configuration of a piping portion of a vacuum drying apparatus according to another modification.
以下,一面參照圖式,一面對本發明之實施形態進行說明。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.
圖1係表示具備第1實施形態之減壓乾燥裝置1之基板處理裝置9之構成的概略圖。本實施形態之基板處理裝置9係對液晶顯示裝置用玻璃基板G(以下稱為基板G)進行抗蝕劑液之塗佈、曝光及
曝光後之顯影之裝置。
FIG. 1 is a schematic diagram showing the configuration of a substrate processing apparatus 9 including a reduced-
基板處理裝置9具有搬入部90、洗淨部91、去水烘烤部92、塗佈部93、作為減壓乾燥部之減壓乾燥裝置1、預烘烤部94、曝光部95、顯影部96、淋洗部97、後烘烤部98及搬出部99作為複數個處理部。基板處理裝置9之各處理部按照上述順序相互鄰接地配置。基板G藉由搬送機構(未圖示),如虛線箭頭所示,隨著處理之進行而按照上述順序朝各處理部搬送。
The substrate processing apparatus 9 includes a
搬入部90將要於基板處理裝置9中處理之基板G搬入至基板處理裝置9內。洗淨部91將朝搬入部90搬入之基板G洗淨,將以微細顆粒為首之有機污染或金屬污染、油脂、自然氧化膜等去除。去水烘烤部92將基板G加熱,使於洗淨部91中附著於基板G之洗淨液汽化,藉此使基板G乾燥。
The carrying-in
塗佈部93對利用去水烘烤部92進行乾燥處理後之基板G,於其表面塗佈處理液。在本實施形態之塗佈部93中,於基板G之表面塗佈具有感光性之光阻抗蝕劑液(以下簡稱為抗蝕劑液)。繼而,減壓乾燥裝置1藉由減壓使塗佈於基板G之表面之該抗蝕劑液之溶劑蒸發,而使基板G乾燥。預烘烤部94將於減壓乾燥裝置1中實施減壓乾燥處理後之基板G加熱,而使基板G表面之抗蝕劑成分固化。藉此,於基板G之表面形成處理液之薄膜、即抗蝕劑膜。
The
其次,曝光部95對形成有抗蝕劑膜之基板G之表面進行曝光處理。曝光部95通過描繪有電路圖案之遮罩照射遠紫外線,將圖案轉印至抗蝕劑膜。顯影部96將於曝光部95中曝光有圖案之基板G浸漬於顯影液中而進行顯影處理。
Next, the
淋洗部97對在顯影部96中進行顯影處理後之基板G利用淋洗液進行清洗。藉此,使顯影處理之進行停止。後烘烤部98將基板G加熱,使於淋洗部97中附著於基板G之淋洗液汽化,藉此使基板G乾燥。於基板處理裝置9之各處理部中實施處理後之基板G朝搬出部99搬送。繼而,自搬出部99將基板G朝至基板處理裝置9之外部搬出。
The rinse
再者,本實施形態之基板處理裝置9具有曝光部95,但於本發明之基板處理裝置中,亦可省略曝光部。於該情形時,只要將基板處理裝置與其他之曝光裝置組合使用即可。
In addition, although the substrate processing apparatus 9 of this embodiment has the
圖2係表示本實施形態之減壓乾燥裝置1之構成之概略圖。圖3係表示配管部40之立體構成之立體圖。如上所述,減壓乾燥裝置1係將塗佈有抗蝕劑液等處理液之基板G進行減壓乾燥之裝置。如圖2所示,減壓乾燥裝置1具有腔室20、泵30、配管部40、惰性氣體供給部50、控制部60及輸入部70。
FIG. 2 is a schematic view showing the configuration of the
腔室20係用以收容基板G且於基板G之周圍形成與外部遮斷之處理空間之機構。腔室20具有基座部21及蓋部22。基座部21係大致水平地擴展之板狀之構件。蓋部22係覆蓋基座部21之上方之有蓋筒狀之構件。於由基座部21及蓋部22構成之框體之內部收容有基板G。又,於蓋部22之下端部具備有密封材221。藉此,於基座部21與蓋部22之接觸部位,腔室20之內部與外部之連通被遮斷。
The
於基座部21設置有排氣口23。於排氣口23連接有
配管部40。藉此,能夠將腔室20內之氣體自排氣口23經由配管部40朝腔室20外排出。於本實施形態之腔室20設置有4個排氣口23。但,設置於腔室20之排氣口23之數量可為1個~3個,亦可為5個以上。又,於本實施形態中,於基座部21設置有排氣口23,但排氣口23亦可設置於蓋部22。
An
於腔室20之內部設置有支撐機構24。支撐機構24具有支撐板241、複數個支撐銷242及支撐柱243。支撐板241係大致水平地擴展之板狀之構件。於支撐板241設置有複數個支撐銷242。支撐銷242分別自支撐板241向上方延伸。複數個支撐銷242係於其上端載置基板G,自背面支撐基板G。複數個支撐銷242係於水平方向上分散地配置。藉此,穩定地支撐基板G。支撐柱243係支撐支撐板241之構件。支撐柱243之下端部固定於基座部21。再者,支撐柱243之下端部亦可固定於升降裝置等其他構件。
A
又,於腔室20設置有測定腔室20內之壓力之壓力感測器25。本實施形態之壓力感測器25設置於基座部21,但亦可於配管部40之腔室連接配管41或集合配管42設置壓力感測器。
Moreover, the
泵30係用以將腔室20內之氣體排出之排氣裝置。如圖2及圖3所示,泵30經由配管部40而與腔室20之內部空間連接。因此,若泵30驅動,則經由配管部40將腔室20內之氣體朝減壓乾燥裝置1之外部排出。該泵30藉由以固定之輸出驅動,而將腔室20內之氣體進行抽吸排氣。藉此,將腔室20內減壓。來自腔室20之排氣速度之調整係藉由下述閥440、450進行。
The
配管部40係將腔室20內與泵30進行流路連接之排氣配管部。配管部40具有4個腔室連接配管41、2個集合配管42、
第1共通配管43、2個大徑配管44、小徑配管45、第2共通配管46、2個排氣配管47及4個個別排氣配管48。
The piping
腔室連接配管41各自之上游側端部(一端)於腔室20內開口。即,4個腔室連接配管41之上游側端部分別成為腔室20內之4個排氣口23。2個腔室連接配管41之下游側端部(另一端)與1個集合配管42之上游側端部進行流路連接。其他2個腔室連接配管41之下游側端部與另一個集合配管42之上游側端部進行流路連接。
Each upstream end portion (one end) of the
圖2中,方便起見,將腔室連接配管41之上游側表示得較粗,將下游側表示得較細。然而,如圖3所示,實際之腔室連接配管41自上游側至下游側為止之粗細大致固定。 In FIG. 2, for convenience, the upstream side of the chamber connection piping 41 is shown thick, and the downstream side is shown thin. However, as shown in FIG. 3, the thickness of the actual chamber connection piping 41 from the upstream side to the downstream side is substantially constant.
一個集合配管42之下游側端部與第1共通配管43之一端進行流路連接。另一個集合配管42之下游側端部與第1共通配管43之另一端進行流路連接。藉此,第1共通配管43與所有腔室連接配管41之另一端間接地流路連接。即,所有排氣口23與第1共通配管43間接地進行流路連接。其結果,於泵30之驅動時能夠使來自所有排氣口23之抽吸排氣力均勻。
The downstream end portion of the one
2個大徑配管44之一者將第1共通配管43之一端與第2共通配管46之一端進行流路連接。2個大徑配管44之另一者將第1共通配管43之另一端與第2共通配管46之另一端進行流路連接。小徑配管45將第1共通配管43之中央部與第2共通配管46之中央部進行流路連接。即,第1共通配管43與第2共通配管46藉由2個大徑配管44及1個小徑配管45而進行流路連接。具體而言,2個大徑配管44及1個小徑配管45係於第1共通配管43與第
2共通配管46之間並列配置。
One of the two large-
於2個大徑配管44分別介插有大徑閥440。大徑閥440可藉由變更開度而變更大徑配管44內之流路面積(流路之開口面積)。於本實施形態中,2個大徑閥440係以相同之開度動作。即,若控制部60將大徑閥440之開度設定為20%,則2個大徑閥440之開度均被調整為20%。
Large-
於小徑配管45介插有小徑閥450。小徑閥450可藉由變更開度而變更小徑配管45內之流路面積(流路之開口面積)。小徑閥450與大徑閥440相比管徑較小。即,小徑閥450之開度最大時之流路面積小於大徑閥440之開度最大時之流路面積。
A small-
對於本實施形態之大徑閥440及小徑閥450,例如使用藉由改變閥之角度而調整其開度之蝶形閥。再者,大徑閥440及小徑閥450只要為能夠藉由其開度而調整減壓排氣之流量之閥即可。因此,亦可代替蝶形閥而使用球閥(球型閥)或其他閥。
For the large-
如此,大徑配管44與小徑配管係於腔室20與泵30之間並列配置。於該減壓乾燥裝置1中,藉由變更閥440、450之開度而變更配管部40之流路面積來調整排氣量。大徑閥440與小徑閥450因閥直徑不同,故而可藉由閥之開度予以調整之流路面積之精度不同。具體而言,小徑閥450與大徑閥440相比,能夠精密地調整流路面積。因此,於該減壓乾燥裝置1,藉由分別使用大徑閥440與小徑閥450,能夠利用大徑閥440粗略地調整排氣量,利用小徑閥450精細地調整排氣量。
In this way, the large-
2個排氣配管47分別將上游側端部流路連接於第2共通配管46。4個個別排氣配管48中之2個之上游側端部係與1
個排氣配管47之下游側端部進行流路連接。其他2個個別排氣配管48之上游側端部係與另一個排氣配管47之下游側端部進行流路連接。4個個別排氣配管48之下游側端部分別連接於泵30。藉此,所有泵30與第2共通配管46間接地進行流路連接。其結果,即便於泵30之抽吸排氣力存在偏差之情形時,由於在第2共通配管46中壓力變得均勻,故亦能夠使2個大徑配管44之下游側端部與小徑配管45之下游側端部處之抽吸排氣力均勻。
The two
若於將2個大徑閥440及1個小徑閥450全部關閉之狀態下驅動泵30,則第2共通配管46、排氣配管47及個別排氣配管48之內部之氣體自泵30朝配管部40之外部排出。藉此,第2共通配管46、排氣配管47及個別排氣配管48之內部之氣壓降低。
When the
若將2個大徑閥440及1個小徑閥450之至少1個打開,則經由具有打開之閥440、450之配管44、45,第1共通配管43與第2共通配管46連通。因此,若一面使泵30驅動,一面將2個大徑閥440及1個小徑閥450之至少1個打開,則腔室20內之氣體自排氣口23經由腔室連接配管41、集合配管42、第1共通配管43、大徑配管44及小徑配管45中之具有打開之閥440、450者、第2共通配管46、排氣配管47及個別排氣配管48,自泵30朝配管部40之外部排出。
When at least one of the two large-
惰性氣體供給部50向腔室20內供給惰性氣體。惰性氣體供給部50具有惰性氣體供給配管51、惰性氣體供給源52及開關閥53。惰性氣體供給配管51之一端連接於腔室20之內部空間,另一端連接於惰性氣體供給源52。本實施形態之惰性氣體供給源52供給乾燥之氮氣作為惰性氣體。開關閥53介插於惰性氣體供給
配管51。因此,若將開關閥53打開,則自惰性氣體供給源52向腔室20內供給惰性氣體。又,若將開關閥53關閉,則自惰性氣體供給源52向腔室20之惰性氣體之供給停止。
The inert
再者,惰性氣體供給部50亦可為供給氬氣等其他乾燥之惰性氣體代替氮氣者。又,減壓乾燥裝置1亦可具有供給大氣之大氣供給部代替惰性氣體供給部50。
Furthermore, the inert
控制部60控制減壓乾燥裝置1之各部。如圖2中概念性地表示般,控制部60係由具有CPU(Central Processing Unit,中央處理單元)等運算處理部61、RAM(Random Access Memory,隨機存取記憶體)等記憶體62及硬碟驅動器等儲存部63的電腦構成。又,控制部60與壓力感測器25、4個泵30、2個大徑閥440、小徑閥450、開關閥53及輸入部70分別電性連接。
The
控制部60將儲存於儲存部63之電腦程式或資料暫時讀出至記憶體62,由運算處理部61基於該電腦程式及資料進行運算處理,藉此控制減壓乾燥裝置1內之各部之動作。藉此,執行減壓乾燥裝置1中之減壓乾燥處理。再者,控制部60可為僅控制減壓乾燥裝置1者,亦可為控制基板處理裝置9之整體者。
The
輸入部70係用以供使用者輸入目標壓力值及目標達到時間之輸入手段。本實施形態之輸入部70係設置於基板處理裝置9之輸入面板,但輸入部70亦可為其他形態之輸入手段(例如鍵盤或滑鼠等)。若將目標壓力值及目標達到時間朝輸入部70輸入,則該資料被取入至控制部60。
The
繼而,一面參照圖3,一面對本實施形態之配管部40之配置更具體地進行說明。如圖3中所示,以下,將鉛垂方向稱為上下方向,將與上下方向正交之方向稱為水平方向,將水平方向中大徑閥440及小徑閥450延伸之方向稱為前後方向,將水平方向中與前後方向正交之方向稱為左右方向。
Next, with reference to FIG. 3, the arrangement|positioning of the piping
於本實施形態中,相對於腔室20而言,泵30配置於下側且後側。腔室連接配管41自排氣口23向下方延伸之後,於前後方向上彎曲。腔室連接配管41之下游側端部與排列於前後方向上之另一個腔室連接配管41之下游側端部進行流路連接。而且,於2個腔室連接配管41之連接部位亦流路連接集合配管42之上游側端部。
In the present embodiment, the
集合配管42分別自上游側端部於左右方向上延伸之後彎曲,並向後方延伸。集合配管42之下游側端部與大徑配管44之上游側端部係以流路成為直線狀之方式進行流路連接。而且,於集合配管42與大徑配管44之連接部位,進而流路連接有第1共通配管43之2個端部中之1個。藉由如此將集合配管42與大徑配管44之連接部位設為直線狀,能夠減小氣體自集合配管42流向大徑配管44時之流路阻力。藉此,於使用大徑配管44進行減壓排氣時,容易抽吸腔室20內之氣體。
The collecting
大徑配管44之一者將第1共通配管43之一端與第2共通配管46之一端進行流路連接。大徑配管44之另一者將第1共通配管43之另一端與第2共通配管46之另一端進行流路連接。與此相對,小徑配管45將第1共通配管43之中央部與第2共通配管46之中央部進行流路連接。因此,小徑配管45位於與2個集合配
管42之下游側端部相距等距離之位置。因此,於使用小徑配管45進行減壓排氣時,能夠使因來自小徑配管45之排氣引起之2個集合配管42之減壓排氣力均勻。
One of the large-
2個排氣配管47之上游側端部分別流路連接於與第2共通配管46之端部相距固定距離之位置。又,於各排氣配管47之下游側端部流路連接2個個別排氣配管48之上游側端部。個別排氣配管48分別於前後方向上延伸之後,向下延伸。而且,各個別排氣配管48之下游側端部與泵30連接。
The upstream end portions of the two
如上所述,本實施形態之配管部40於左右方向上對稱地配置。藉此,能夠於4個排氣口23均等地進行抽吸排氣。
As mentioned above, the piping
再者,各配管延伸之方向可藉由兼顧減壓乾燥裝置1內之其他機構之位置而適當變更。
Furthermore, the direction in which each pipe extends can be appropriately changed by taking into account the positions of other mechanisms in the
若列舉一例,配管部40之各配管直徑如下所述。腔室連接配管41及個別排氣配管48之配管直徑分別為150mm。集合配管42、第1共通配管43、大徑配管44、第2共通配管46及排氣配管47之配管直徑分別為200mm。又,小徑配管45之配管直徑為50mm。
As an example, each piping diameter of the piping
藉由集合配管42之配管直徑較腔室連接配管41之配管直徑大,能夠效率良好地排出自腔室連接配管41流向集合配管42之氣體。又,藉由將集合配管42、大徑配管44及第2共通配管46設為連續之同徑之配管,而減小該等配管彼此之連接部位之流路阻力。藉此,於將大徑閥440打開而將大流量之氣體排氣時,能夠效率良好地排出自集合配管42通過大徑配管44流向第2共通配管46之氣體。
Since the pipe diameter of the collecting
於本實施形態中,小徑配管45之配管直徑係大徑配管44之配管直徑之25%。即,小徑配管45之流路面積係大徑配管44之流路面積之6.25%。因此,例如若對大徑閥440與小徑閥450使用相同形式之閥,則能夠以介插於小徑配管45之小徑閥450之最大開度時之流路面積未滿大徑閥440之最大開度時之流路面積之10%的方式選定大徑閥440及小徑閥450。如此一來,能夠將小徑閥450之流路面積之調整精度設為大徑閥440之流路面積之調整精度之10倍以上。
In this embodiment, the piping diameter of the small-
再者,大徑配管44與小徑配管45之配管直徑之比不限於上述例。小徑配管45之流路面積較佳為大徑配管44之流路面積之50%以下。如此一來,小徑閥450之流路面積之調整精度優於大徑閥440之流路面積之調整精度,因此,能夠進行基於小徑閥450之精度較高之控制。
In addition, the ratio of the piping diameter of the
繼而,一面參照圖4,一面對該減壓乾燥裝置1中之減壓乾燥處理進行說明。圖4係表示減壓乾燥裝置1中之減壓乾燥處理之流程的流程圖。圖5係表示各控制模式下之大徑閥與小徑閥之動作之圖。圖6係表示目標減壓波形之一例之圖。
Next, the vacuum drying process in the
如圖4所示,減壓乾燥裝置1首先執行學習步驟(步驟ST101)。於學習步驟中,減壓乾燥裝置1針對預先決定之閥440、450之每一開度獲取表示基於減壓排氣之腔室20內之壓力變化之減壓曲線資料。
As shown in FIG. 4, the reduced-
於步驟ST101之學習步驟中,藉由大氣開放使腔室
20內之壓力成為大氣壓即100,000[Pa]之後,使泵30驅動,並且將閥440、450打開至既定之開度。繼而,至閥440、450打開後經過既定時間為止,藉由壓力感測器25計測腔室20內之壓力變化。藉此,控制部60獲取減壓曲線資料。藉由針對預先決定之每一開度進行此種壓力計測,而對複數個開度分別獲取減壓曲線資料。減壓曲線資料例如針對閥440、450之每一開度,以表示經過時間與壓力值之對應關係之表格資料之形式保持於儲存部63內。
In the learning step of step ST101, the chamber is opened by the atmosphere
After the pressure in 20 becomes atmospheric pressure, that is, 100,000 [Pa], the
如圖5所示,該減壓乾燥裝置1可切換為將大徑閥440之開度固定並且調整小徑閥450之開度之小徑閥控制模式及調整大徑閥之開度之大徑閥控制模式。於步驟ST101之學習步驟中,亦針對複數個模式獲取減壓曲線資料。
As shown in FIG. 5 , the
更具體而言,小徑閥控制模式包含第1小徑閥控制模式與第2小徑閥控制模式。於第1小徑閥控制模式下,關閉大徑閥440並且調整小徑閥450之開度。於第2小徑閥控制模式下,將大徑閥440之開度固定並且調整小徑閥450之開度。於第2小徑閥控制模式下,例如,將大徑閥440之開度固定為大於0%且成為30%以下之開度,並且調整小徑閥450之開度。如此一來,能夠確保固定以上之減壓排氣量並且藉由小徑閥450進行精度較高之流路面積之控制。
More specifically, the small diameter valve control mode includes a first small diameter valve control mode and a second small diameter valve control mode. In the first small-diameter valve control mode, the large-
又,大徑閥控制模式包含第1大徑閥控制模式、第2大徑閥控制模式及第3大徑閥控制模式。於第1大徑閥控制模式下,關閉小徑閥450並且調整大徑閥440之開度。於第2大徑閥控制模式下,將小徑閥450之開度固定為最大開度並且調整大徑閥440之開度。於第3大徑閥控制模式下,將大徑閥440與小徑閥450
同時調整為相同開度。再者,大徑閥控制模式中亦可包含將小徑閥450固定為大於0%且小於最大開度之開度並且調整大徑閥440之開度的模式。
In addition, the large-diameter valve control mode includes a first large-diameter valve control mode, a second large-diameter valve control mode, and a third large-diameter valve control mode. In the first large-diameter valve control mode, the small-
於小徑閥控制模式下,藉由調整小徑閥450之開度,能夠精度良好地調整流路面積而接近所期望之減壓速度。另一方面,於大徑閥控制模式下,藉由調整能夠以較大範圍調整流路面積之大徑閥440之開度,能夠應答性良好地調整減壓速度。
In the small-diameter valve control mode, by adjusting the opening degree of the small-
於本實施形態中,於步驟ST101之學習步驟及下述步驟ST105之減壓乾燥步驟中,執行第1小徑閥控制模式、第2大徑閥控制模式及第3大徑閥控制模式。再者,於本發明中,於減壓乾燥步驟中,只要至少能夠執行小徑閥控制模式中之1個與大徑閥控制模式中之1個即可。 In the present embodiment, the first small diameter valve control mode, the second large diameter valve control mode, and the third large diameter valve control mode are executed in the learning step of step ST101 and the decompression drying step of the following step ST105. Furthermore, in the present invention, in the drying step under reduced pressure, at least one of the small-diameter valve control modes and one of the large-diameter valve control modes may be executed.
於本實施形態之學習步驟中,作為第1小徑閥控制模式,例如,將大徑閥440之開度設為0%,對小徑閥450之開度為5%、7%、8%、10%、12%、15%、20%、50%及100%之情形分別獲取減壓曲線資料。又,作為第2大徑閥控制模式,例如,將小徑閥450之開度設為100%,對2個大徑閥440之開度為5%、7%、8%、10%、12%、15%、20%、50%及100%之情形分別獲取減壓曲線資料。而且,作為第3大徑閥控制模式,例如,對2個大徑閥440及小徑閥450之全部之開度為5%、7%、8%、10%、12%、15%、20%、50%及100%之情形分別獲取減壓曲線資料。
In the learning step of the present embodiment, as the first small-diameter valve control mode, for example, the opening of the large-
於本實施形態中,進行步驟ST101之學習步驟之後,進行基板G之減壓乾燥處理。首先,將目標壓力值及目標達到時間朝輸入部70輸入(步驟ST102)。於本實施形態中,向輸入部70輸
入目標壓力值與達到該目標壓力值為止之時間即目標達到時間之複數個組。於圖6中表示由該數組目標壓力值及目標達到時間構成之目標減壓波形R之一例。
In this embodiment, after performing the learning process of step ST101, the vacuum drying process of the board|substrate G is performed. First, the target pressure value and the target reaching time are input to the input unit 70 (step ST102). In the present embodiment, input to the
於圖6之例之目標減壓波形R中,於第1期間T1,初始壓力值為大氣壓100,000Pa,目標壓力值為10,000Pa,目標達到時間為20sec。於第2期間T2,目標壓力值為1,000Pa,目標達到時間為10sec。於第3期間T3,目標壓力值為400Pa,目標達到時間為10sec。又,於第4期間T4,目標壓力值為20Pa,目標達到時間為5sec。而且,於第4期間T4達到目標壓力值之後,於第5期間T5,藉由惰性氣體沖洗使腔室20內之壓力恢復至大氣壓。如圖6之例之目標減壓波形R般,藉由階段性地進行減壓,可抑制塗佈於基板G之表面之處理液爆沸。
In the target decompression waveform R of the example of FIG. 6, in the 1st period T1, the initial pressure value is atmospheric pressure 100,000Pa, the target pressure value is 10,000Pa, and the target reaching time is 20sec. In the second period T2, the target pressure value was 1,000 Pa, and the target reaching time was 10 sec. In the third period T3, the target pressure value was 400 Pa, and the target reaching time was 10 sec. In addition, in the fourth period T4, the target pressure value was 20 Pa, and the target reaching time was 5 sec. Then, after reaching the target pressure value in the fourth period T4, in the fifth period T5, the pressure in the
其次,將基板G搬入至腔室20內(步驟ST103)。此時,於閥440、450及開關閥53關閉之狀態下,藉由腔室開關機構(未圖示)使腔室20之蓋部22上升。藉此,將腔室20打開。繼而,將塗佈有處理液之基板G朝腔室20內搬入,並載置於支撐銷242上。其後,藉由腔室開關機構使蓋部22下降。藉此,將腔室20關閉,將基板G收容於腔室20內。
Next, the substrate G is carried into the chamber 20 (step ST103). At this time, when the
於本實施形態中,於步驟ST102之輸入步驟之後進行步驟ST103之基板G之搬入步驟,但步驟ST102與步驟ST103之順序亦可顛倒。 In this embodiment, the carrying-in step of the substrate G in step ST103 is performed after the input step in step ST102, but the order of step ST102 and step ST103 may be reversed.
繼而,基於步驟ST102中輸入之目標壓力值及目標達到時間,設定減壓乾燥步驟中之閥440、450之開度(步驟ST104)。於下述步驟ST105之減壓乾燥步驟中,藉由使腔室20內減壓而使
附著有處理液之基板G乾燥。於步驟ST104之開度設定步驟中,控制部60基於由目標壓力值及目標達到時間構成之目標減壓波形R,選擇各期間之控制模式,選擇與沿著目標減壓波形R之各期間之波形近似之減壓曲線資料。繼而,控制部60基於所選擇之減壓曲線資料中之閥440、450之開度,設定各期間之閥440、450之開度。
Then, based on the target pressure value and target reaching time input in step ST102, the opening degrees of the
此時,作為閥440、450之開度之設定方法,例如亦可將最近似之減壓曲線資料之開度直接設定為閥440、450之開度,亦可參考近似之2個減壓曲線資料之開度,考慮加權而算出閥440、450之開度。又,亦可利用其他方法設定閥440、450之開度。
At this time, as a method for setting the opening degrees of the
此處,對減壓乾燥步驟中之模式選擇進行說明。於開始自大氣壓減壓之第1期間T1,容易進行減壓,另一方面,於較少之流路面積之變化下,減壓速度大幅度地改變。又,於減壓乾燥處理中最初始之階段即第1期間T1,最容易產生爆沸。因此,要求精度良好地控制減壓速度。因此,於該期間,藉由流路面積之調整精度較高之小徑閥控制模式進行減壓排氣。藉此,於減壓速度難以穩定之第1期間T1,藉由調整小徑閥450之開度,能夠精度良好地調整流路面積而接近所期望之減壓速度。又,於減壓乾燥步驟之最終階段中目標壓力值最低之第4期間T4,必須增大減壓排氣力,因此,藉由大徑閥控制模式進行減壓排氣。藉此,藉由調整能夠以較大範圍調整流路面積之大徑閥440之開度,能夠應答性良好地調整減壓速度而接近所期望之減壓速度。
Here, the mode selection in the reduced-pressure drying step will be described. In the first period T1 when the decompression from the atmospheric pressure is started, the decompression is easy to be carried out, and on the other hand, the decompression speed is greatly changed with a small change in the flow path area. In addition, bumping is most likely to occur in the first period T1, which is the first stage in the drying under reduced pressure. Therefore, it is required to control the decompression speed with high accuracy. Therefore, during this period, decompression and exhaust are performed by the small-diameter valve control mode in which the adjustment accuracy of the flow path area is high. Thereby, in the first period T1 in which the decompression speed is difficult to stabilize, by adjusting the opening degree of the
於本實施形態中,首先,於自大氣壓進行減壓之第1期間T1,選擇第1小徑閥控制模式。其次,於開始壓力值為10,000 Pa且目標壓力值為1,000Pa之第2期間T2、及開始壓力值為1,000Pa且目標壓力值為400Pa之第3期間T3,選擇第3大徑閥控制模式。繼而,於目標壓力值成為最低之20Pa之第4期間T4,選擇第2大徑閥控制模式。 In the present embodiment, first, the first small diameter valve control mode is selected during the first period T1 during which the pressure is reduced from the atmospheric pressure. Next, at the starting pressure value of 10,000 In the second period T2 of Pa and the target pressure value of 1,000Pa, and the third period T3 of the start pressure value of 1,000Pa and the target pressure value of 400Pa, the third large diameter valve control mode is selected. Then, in the fourth period T4 when the target pressure value becomes the lowest 20 Pa, the second large-diameter valve control mode is selected.
即,控制部60於第1期間T1,基於步驟ST101之學習步驟中所獲得之第1小徑閥控制模式之減壓曲線資料,將大徑閥440關閉,選擇小徑閥450之開度。同樣地,控制部60於第2期間T2及第3期間T3,基於步驟ST101之學習步驟中所獲得之第3大徑閥控制模式之減壓曲線資料,選擇大徑閥440及小徑閥450之開度。又,控制部60於第4期間T4,基於步驟ST101之學習步驟中所獲得之第2大徑閥控制模式之減壓曲線資料,將小徑閥450設為最大開度,選擇大徑閥440之開度。
That is, the
選擇、設定各期間T1~T4之各閥440、450開度之後,控制部60使用所設定之開度進行減壓乾燥步驟(步驟ST105)。此時,於本實施形態中,以預先設定之開度為基準,並且參照利用壓力感測器25所測定出之腔室20內之壓力對各閥440、450之開度進行反饋控制。再者,亦可不變更所設定之開度而進行減壓乾燥步驟。
After selecting and setting the opening degrees of the
又,於本實施形態中,於所有期間T1~T5之前,設定各期間T1~T4之閥440、450之開度,但本發明不限於此。亦可於各期間T1~T4各自即將開始之前,將利用壓力感測器25所測定出之腔室20內之壓力作為初始壓力值,設定各期間之開度。如此一來,即便於前一期間之最終壓力值與目標壓力值不同之情形時,亦能夠於下一期間進行恰當之控制。
In addition, in the present embodiment, the opening degrees of the
於步驟ST105之減壓乾燥步驟中,於第1期間T1~第4期間T4,如上所述,藉由所設定之開度與反饋控制,控制部60控制各閥440、450之開度。繼而,於第4期間T4結束後,控制部60將所有閥440、450關閉,停止自腔室20內之排氣。繼而,將開關閥53打開,進行自惰性氣體供給源52向腔室20內之惰性氣體之沖洗。藉此,使腔室20內之氣壓上升至大氣壓。腔室20內之壓力成為大氣壓後,將開關閥53關閉。藉此,減壓乾燥步驟結束。
In the decompression drying step of step ST105, the
其後,自腔室20將基板G搬出(步驟ST106)。於步驟ST106中,與步驟ST103同樣地,於閥440、450及開關閥53關閉之狀態下,藉由腔室開關機構使腔室20之蓋部22上升。藉此,將腔室20打開。繼而,將實施減壓乾燥處理後之基板G朝腔室20外搬出。
Then, the board|substrate G is carried out from the chamber 20 (step ST106). In step ST106 , similarly to step ST103 , the
即便為根據相同設計而製造之複數個減壓乾燥裝置1,因製造誤差等,即便以相同之閥440、450之開度進行減壓乾燥處理,各減壓乾燥裝置1中之腔室20內之減壓速度亦存在偏差。又,若減壓乾燥裝置1之設置環境不同,則即便閥440、450之開度相同,腔室20內之減壓速度亦互不相同。因此,有根據減壓乾燥裝置1之設置環境而於所期望之減壓速度與實際之減壓速度之間發生背離之虞。
Even if there are a plurality of
於本實施形態中,於步驟ST102~步驟ST106中進行之基板G之減壓乾燥處理之前進行步驟ST101之學習步驟。藉此,於與減壓乾燥裝置1進行基板G之減壓乾燥處理時相同之設置環境下,獲取減壓曲線資料。藉由基於該減壓曲線資料進行減壓乾燥處
理,能夠抑制於所期望之減壓速度與實際之減壓速度之間發生背離。即,無關於裝置之個體差異或設置環境,能夠以更接近所期望之減壓速度的減壓速度進行減壓處理。
In this embodiment, the learning process of step ST101 is performed before the decompression drying process of the board|substrate G performed in step ST102 - step ST106. Thereby, the reduced pressure curve data can be acquired under the same setting environment as when the reduced
再者,步驟ST101之學習步驟亦可不針對步驟ST102~步驟ST106中進行之基板G之每一減壓乾燥處理而進行。該學習步驟可於減壓乾燥裝置1之設置或移設時進行,亦可於定期之維護時進行。
In addition, the learning step of step ST101 may not be performed for each decompression drying process of the substrate G performed in steps ST102 to ST106. The learning step can be performed during installation or relocation of the
再者,於本實施形態中,藉由步驟ST101之學習步驟及步驟ST104之開度設定步驟,預先設定各期間T1~T4中之開度。然而,本發明不限於此。亦可省略步驟ST101之學習步驟,藉由基於目標減壓波形R之各期間之初始壓力值及目標壓力值之模式選擇與基於壓力感測器25之計測結果之反饋控制來決定減壓乾燥步驟中之閥440、450之開度。
In addition, in this embodiment, the opening degree in each period T1-T4 is preset by the learning process of step ST101 and the opening degree setting process of step ST104. However, the present invention is not limited to this. The learning step of step ST101 may be omitted, and the decompression drying step may be determined by mode selection based on the initial pressure value and target pressure value in each period of the target decompression waveform R and feedback control based on the measurement result of the
以上,對本發明之一實施形態進行了說明,但本發明並不限定於上述實施形態,例如亦可如以下般實施變形。 As mentioned above, although one Embodiment of this invention was described, this invention is not limited to the said embodiment, For example, the following deformation|transformation can be implemented.
圖7係表示一變形例之減壓乾燥裝置之配管部40A之立體構成之立體圖。該配管部40A具有4個腔室連接配管41A、第1共通配管43A、介插有大徑閥440A之2個大徑配管44A、介插有小徑閥450A之小徑配管45A、第2共通配管46A、2個排氣配管47A及4個個別排氣配管48A。
FIG. 7 is a perspective view showing a three-dimensional configuration of a
於圖7之例中,與上述實施形態同樣地,相對於腔室20A而言,泵30A配置於下側且後側。腔室連接配管41A自排氣
口23向下方延伸之後,於前後方向上彎曲。而且,腔室連接配管41A中之2個下游側端部與於左右方向上延伸之第1共通配管43A之一個端部進行流路連接。又,腔室連接配管41A之其他2個下游側端部與第1共通配管43A之另一個端部進行流路連接。
In the example of FIG. 7, the
於第1共通配管43A之側部,流路連接2個大徑配管44A及小徑配管45A之上游側端部。2個大徑配管44A之下游側端部與於左右方向上延伸之第2共通配管46A之2個端部分別進行流路連接。小徑配管45A之下游側端部與第2共通配管46A之中央部進行流路連接。
The upstream ends of the two large-
排氣配管47A之上游側端部分別流路連接於大徑配管44A之1個與第2共通配管46A之連接部位。於各排氣配管47A之下游側端部流路連接2個個別排氣配管48A之上游側端部。個別排氣配管48A分別於前後方向上延伸之後,向下延伸。而且,各個別排氣配管48A之下游側端部與泵30A連接。
The upstream end portions of the
於上述實施形態中,腔室連接配管41經由集合配管42與第1共通配管43連接。然而,亦可如圖7之例般,腔室連接配管41A直接與第1共通配管43A連接。又,上述實施形態中之配管部40與圖7之例之配管部40A係配管彼此之連接部位不同。然而,圖7之例之配管部40A亦於左右方向上對稱地配置,能夠於4個排氣口23A均等地進行抽吸排氣。如此,配管彼此之連接部位可適當變更。
In the above-described embodiment, the chamber connection piping 41 is connected to the first
圖8係表示另一變形例之減壓乾燥裝置之配管部40B之構成之概略圖。該配管部40B具有1個腔室連接配管41B、介插有大徑閥440B之1個大徑配管44B、介插有小徑閥450B之1個小
徑配管45B及1個排氣配管47B。小徑閥450B與大徑閥440B相比管徑較小。
FIG. 8 is a schematic view showing the configuration of the
腔室連接配管41B之上游側端部於腔室20B內開口。排氣配管47B之下游側端部連接於泵30B。大徑配管44B及小徑配管45B之上游側端部分別流路連接於腔室連接配管41B之下游側端部。又,大徑配管44B及小徑配管45B之下游側端部流路連接於排氣配管47B之上游側端部。即,大徑配管44B及小徑配管45B係於腔室20B與泵30B之間並列配置。
The upstream end portion of the
如圖8之例般,將腔室之內部與配管部40B連接之排氣口23B亦可為1個。再者,根據腔室之形狀或大小,排氣口23B之數量或配置可適當變更。於上述實施形態中,排氣口23B設置於腔室20B之底面,但本發明不限於此。排氣口23B亦可設置於腔室20B之側壁或上表面。
As in the example of FIG. 8 , the number of the
圖9係表示另一變形例之減壓乾燥裝置之配管部40C之構成之概略圖。該配管部40C具有8個腔室連接配管41C、2個集合配管42C、第1共通配管43C、介插有大徑閥440C之3個大徑配管44C、介插有小徑閥450C之2個小徑配管45C、第2共通配管46C及2個排氣配管47C。小徑閥450C與大徑閥440C相比管徑較小。
FIG. 9 is a schematic diagram showing the configuration of a
腔室連接配管41C之上游側端部於腔室20C內開口。於集合配管42C之上游側端部分別流路連接4個腔室連接配管41C之下游側端部。於第1共通配管43C流路連接所有集合配管42C之下游側端部、以及所有大徑配管44C及所有小徑配管45C之上游側端部。於第2共通配管46C流路連接所有大徑配管44C及所有小
徑配管45C之下游側端部、以及所有排氣配管47C之上游側端部。排氣配管47C之下游側端部分別連接於泵30C。
The upstream end portion of the
如圖8之例般,大徑配管44B與小徑配管45B之數量亦可分別為1個。又,如圖9之例般,大徑配管44C亦可為3個以上,小徑配管45C亦可為2個以上。即,大徑配管與小徑配管可分別為1個,亦可為複數個。
As in the example of FIG. 8 , the number of the large-
又,於上述實施形態中,使2個大徑閥以相同之開度動作,但本發明不限於此。於設有複數個大徑閥之情形時,亦可根據所需之減壓排氣力,僅將大徑閥之一部分打開,並控制其開度。於設有複數個小徑閥之情形時亦相同。 In addition, in the above-described embodiment, the two large-diameter valves are operated with the same opening degree, but the present invention is not limited to this. When there are multiple large-diameter valves, only a part of the large-diameter valve can be opened according to the required decompression and exhaust force, and its opening degree can be controlled. The same applies to the case where a plurality of small diameter valves are provided.
又,上述實施形態之減壓乾燥裝置為基板處理裝置之一部分,但本發明之減壓乾燥裝置亦可為不與其他處理部一起設置之獨立裝置。又,上述實施形態之減壓乾燥裝置係使附著有抗蝕劑液之基板乾燥者,但本發明之減壓乾燥裝置亦可為使附著有其他處理液之基板乾燥者。 In addition, the vacuum drying apparatus of the above-described embodiment is a part of the substrate processing apparatus, but the vacuum drying apparatus of the present invention may be an independent apparatus that is not provided together with other processing units. In addition, the vacuum drying apparatus of the above-mentioned embodiment dries the substrate to which the resist liquid adheres, but the reduced pressure drying apparatus of the present invention may also dry the substrate to which other processing liquids adhere.
又,上述實施形態之減壓乾燥裝置係將液晶顯示裝置用玻璃基板作為處理對象,但本發明之減壓乾燥裝置亦可為將有機EL(Electroluminescence)顯示裝置等其他FPD(Flat Panel Display)用基板、半導體晶圓、光罩用玻璃基板、彩色濾光片用基板、記錄碟片用基板、太陽能電池用基板等其他精密電子裝置用基板作為處理對象者。 In addition, the vacuum drying apparatus of the above-mentioned embodiment uses a glass substrate for a liquid crystal display device as a processing object, but the vacuum drying apparatus of the present invention may be used for other FPD (Flat Panel Display) such as organic EL (Electroluminescence) display devices. Substrates, semiconductor wafers, glass substrates for masks, substrates for color filters, substrates for recording discs, substrates for solar cells, and other substrates for precision electronic devices are treated as objects.
又,亦可將上述實施形態或變形例中出現之各要素於不產生矛盾之範圍內適當組合。 In addition, the respective elements appearing in the above-described embodiment or modification examples may be appropriately combined within a range that does not cause contradictions.
1‧‧‧減壓乾燥裝置 1‧‧‧Decompression drying device
20‧‧‧腔室 20‧‧‧Chamber
21‧‧‧基座部 21‧‧‧Pedestal
22‧‧‧蓋部 22‧‧‧Cover
23‧‧‧排氣口 23‧‧‧Exhaust port
24‧‧‧支撐機構 24‧‧‧Supporting mechanism
25‧‧‧壓力感測器 25‧‧‧Pressure sensor
30‧‧‧泵 30‧‧‧Pump
40‧‧‧配管部 40‧‧‧Piping Department
41‧‧‧腔室連接配管 41‧‧‧Chamber connection piping
42‧‧‧集合配管 42‧‧‧Assembly piping
43‧‧‧第1共通配管 43‧‧‧First common piping
44‧‧‧大徑配管 44‧‧‧Large diameter piping
45‧‧‧小徑配管 45‧‧‧Small diameter piping
46‧‧‧第2共通配管 46‧‧‧Second common piping
47‧‧‧排氣配管 47‧‧‧Exhaust piping
48‧‧‧個別排氣配管 48‧‧‧Individual exhaust piping
50‧‧‧惰性氣體供給部 50‧‧‧Inert Gas Supply Section
51‧‧‧惰性氣體供給配管 51‧‧‧Inert gas supply piping
52‧‧‧惰性氣體供給源 52‧‧‧Inert gas supply source
53‧‧‧開關閥 53‧‧‧On-off valve
60‧‧‧控制部 60‧‧‧Control
61‧‧‧運算處理部 61‧‧‧Operation Processing Department
62‧‧‧記憶體 62‧‧‧Memory
63‧‧‧儲存部 63‧‧‧Storage
70‧‧‧輸入部 70‧‧‧Input
221‧‧‧密封材 221‧‧‧Sealing material
241‧‧‧支撐板 241‧‧‧Support plate
242‧‧‧支撐銷 242‧‧‧Support pin
243‧‧‧支撐柱 243‧‧‧Support column
440‧‧‧大徑閥 440‧‧‧Large diameter valve
450‧‧‧小徑閥 450‧‧‧Small diameter valve
G‧‧‧基板 G‧‧‧Substrate
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CN110779280A (en) | 2020-02-11 |
CN110779280B (en) | 2022-07-12 |
JP6808690B2 (en) | 2021-01-06 |
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