CN105373443B - 具有存储器系统体系结构的数据系统和数据读取方法 - Google Patents

具有存储器系统体系结构的数据系统和数据读取方法 Download PDF

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Publication number
CN105373443B
CN105373443B CN201510511586.2A CN201510511586A CN105373443B CN 105373443 B CN105373443 B CN 105373443B CN 201510511586 A CN201510511586 A CN 201510511586A CN 105373443 B CN105373443 B CN 105373443B
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China
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memory
processor
data
error information
error
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Chinese (zh)
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CN105373443A (zh
Inventor
郑宏忠
胡潮红
苏哈斯
罗伯特·布伦南
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
    • G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
    • G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Quality & Reliability (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Human Computer Interaction (AREA)
  • Detection And Correction Of Errors (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Computer Security & Cryptography (AREA)
CN201510511586.2A 2014-08-19 2015-08-19 具有存储器系统体系结构的数据系统和数据读取方法 Expired - Fee Related CN105373443B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201462039396P 2014-08-19 2014-08-19
US62/039,396 2014-08-19
US14/594,049 US20160055058A1 (en) 2014-08-19 2015-01-09 Memory system architecture
US14/594,049 2015-01-09

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CN105373443A CN105373443A (zh) 2016-03-02
CN105373443B true CN105373443B (zh) 2020-04-07

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US (1) US20160055058A1 (enExample)
JP (1) JP6815723B2 (enExample)
KR (1) KR20160022242A (enExample)
CN (1) CN105373443B (enExample)

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JP6673021B2 (ja) * 2016-05-31 2020-03-25 富士通株式会社 メモリおよび情報処理装置
KR102387181B1 (ko) 2017-10-31 2022-04-19 에스케이하이닉스 주식회사 컴퓨팅 디바이스 및 그것의 동작방법
KR102714157B1 (ko) 2019-01-15 2024-10-08 에스케이하이닉스 주식회사 메모리 시스템, 데이터 처리 시스템 및 데이터 처리 시스템의 동작방법
US11636014B2 (en) 2017-10-31 2023-04-25 SK Hynix Inc. Memory system and data processing system including the same
KR102394695B1 (ko) 2017-11-08 2022-05-10 에스케이하이닉스 주식회사 메모리 시스템 및 그것의 동작방법
KR102455880B1 (ko) 2018-01-12 2022-10-19 에스케이하이닉스 주식회사 메모리 시스템 및 메모리 시스템의 동작 방법
US10854242B2 (en) * 2018-08-03 2020-12-01 Dell Products L.P. Intelligent dual inline memory module thermal controls for maximum uptime
US11093393B2 (en) * 2018-12-27 2021-08-17 Samsung Electronics Co., Ltd. System and method for early DRAM page-activation
JP7338354B2 (ja) * 2019-09-20 2023-09-05 富士通株式会社 情報処理装置，情報処理システム及び通信管理プログラム
US11232049B2 (en) 2019-12-13 2022-01-25 Micron Technology, Inc. Memory module with computation capability
US11630723B2 (en) * 2021-01-12 2023-04-18 Qualcomm Incorporated Protected data streaming between memories
US11593191B2 (en) * 2021-07-13 2023-02-28 Dell Products L.P. Systems and methods for self-healing and/or failure analysis of information handling system storage
JP7299374B1 (ja) * 2022-04-18 2023-06-27 華邦電子股▲ふん▼有限公司 半導体記憶装置及び半導体記憶装置の制御方法
US20240070007A1 (en) * 2022-08-31 2024-02-29 Micron Technology, Inc. Memory with fail indicators, including memory with led fail indicators, and associated systems, devices, and methods

Citations (4)

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JPS54111725A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Error processing system in memory unit
CN101127243A (zh) * 2006-08-18 2008-02-20 富士通株式会社 存储器控制器和存储器控制方法
US7487428B2 (en) * 2006-07-24 2009-02-03 Kingston Technology Corp. Fully-buffered memory-module with error-correction code (ECC) controller in serializing advanced-memory buffer (AMB) that is transparent to motherboard memory controller
JP5691943B2 (ja) * 2011-08-31 2015-04-01 日本電気株式会社 メモリ電圧制御装置

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JPH058652U (ja) * 1991-07-11 1993-02-05 横河電機株式会社 エラー検出訂正回路を有するメモリ装置
US7523381B2 (en) * 2005-09-01 2009-04-21 Micron Technology, Inc. Non-volatile memory with error detection
US8352805B2 (en) * 2006-05-18 2013-01-08 Rambus Inc. Memory error detection
US7721140B2 (en) * 2007-01-02 2010-05-18 International Business Machines Corporation Systems and methods for improving serviceability of a memory system
US7949931B2 (en) * 2007-01-02 2011-05-24 International Business Machines Corporation Systems and methods for error detection in a memory system
KR101042197B1 (ko) * 2008-12-30 2011-06-20 (주)인디링스 메모리 컨트롤러 및 메모리 관리 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54111725A (en) * 1978-02-22 1979-09-01 Hitachi Ltd Error processing system in memory unit
US7487428B2 (en) * 2006-07-24 2009-02-03 Kingston Technology Corp. Fully-buffered memory-module with error-correction code (ECC) controller in serializing advanced-memory buffer (AMB) that is transparent to motherboard memory controller
CN101127243A (zh) * 2006-08-18 2008-02-20 富士通株式会社 存储器控制器和存储器控制方法
JP5691943B2 (ja) * 2011-08-31 2015-04-01 日本電気株式会社 メモリ電圧制御装置

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KR20160022242A (ko) 2016-02-29
JP2016045957A (ja) 2016-04-04
US20160055058A1 (en) 2016-02-25
JP6815723B2 (ja) 2021-01-20
CN105373443A (zh) 2016-03-02

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