CN105316760A - Method for growing polycrystals on backs of silicon wafers - Google Patents
Method for growing polycrystals on backs of silicon wafers Download PDFInfo
- Publication number
- CN105316760A CN105316760A CN201410370757.XA CN201410370757A CN105316760A CN 105316760 A CN105316760 A CN 105316760A CN 201410370757 A CN201410370757 A CN 201410370757A CN 105316760 A CN105316760 A CN 105316760A
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- Prior art keywords
- storage tank
- silicon chip
- back side
- silicon wafers
- chip back
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Abstract
The invention discloses a method for growing polycrystals on the backs of silicon wafers. The method is characterized by comprising the steps of: putting a plurality of silicon wafers in a cassette, wherein a plurality of accommodation slots are formed in the cassette, and each of the silicon wafers is placed in one accommodation slot; and carrying out sand blasting on the inner walls of the accommodation slots to coarsen the accommodation slots. According to the method for growing polycrystals on the backs of the silicon wafers, the product yield is improved, the edge breakage reject ratio is reduced from 5% to be less than or equal to 1%, and the single furnace yield of the cassette is increased by 40%.
Description
Technical field
The present invention relates to a kind of long polycrystalline method of silicon chip back side.
Background technology
Being growing more intense of semi-conductor market competition, reduces energy consumption, saves cost, promotes the core that yield becomes technical development.Polysilicon membrane growing apparatus, comprises quartz boat in the prior art, quartz boat total length 121.45mm, comprises 50 storage tanks, and adjacent storage tank spacing is 2.38mm, and surface properties is smooth.One of shortcoming of this brilliant boat is that 50 storage tanks cannot all screenings, and air-flow can be caused to pass through from the gap between sheet and sheet smoothly; Another shortcoming is that silicon chip and brilliant boat contact site can be bonded together in technological process, causes collapsing limit when unloading piece.Therefore need to carry out specific aim improvement for above 2 problems.
Summary of the invention
An object of the present invention is to overcome deficiency of the prior art, provides the silicon chip back side that can improve yield long polycrystalline method.
For realizing above object, the present invention is achieved through the following technical solutions:
The long polycrystalline method of silicon chip back side, is characterized in that, silicon chip described in multi-disc is positioned on brilliant boat, described brilliant boat is provided with multiple storage tank, every sheet silicon chip is placed in a storage tank; Described storage tank inwall uses sandblasting to make it coarse.
Preferably, described storage tank inner wall roughness is 2-4 μm.
Preferably, the inwall of storage tank described in the sandblasting of silicon carbide powder is used.
Preferably, the particle diameter of described silicon carbide powder is 220-260 order.
Preferably, the spacing of described storage tank is 2-4mm.
Preferably, the spacing of described storage tank is 2.5-4.5mm.
The long polycrystalline method of silicon chip back side in the present invention, improves product yield, collapses limit fraction defective by 5% Jiang Zhi≤1%.Brilliant boat list stove output promotes 40%.
Accompanying drawing explanation
Fig. 1 is the brilliant boat structural representation used in the present invention.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in detail:
The long polycrystalline method of silicon chip back side, silicon chip described in multi-disc is positioned on brilliant boat 1, and described brilliant boat 1 is provided with multiple storage tank 2, and every sheet silicon chip is placed in a storage tank 2; Described storage tank 2 inwall uses sandblasting to make it coarse.
Use the inwall of storage tank 2 described in the sandblasting of silicon carbide powder, make described storage tank 2 inner wall roughness be 2-4 μm.The particle diameter of described silicon carbide powder is 220-260 order.The spacing of described storage tank 2 is 2-4mm, is preferably 3mm.The spacing of described storage tank is 2.5-4.5mm, is preferably 3.5mm.
Embodiment in the present invention, only for the present invention will be described, does not form the restriction to right, other equivalent in fact substituting, all in scope that those skilled in that art can expect.
Claims (6)
1. the long polycrystalline method of silicon chip back side, is characterized in that, silicon chip described in multi-disc is positioned on brilliant boat, and described brilliant boat is provided with multiple storage tank, and every sheet silicon chip is placed in a storage tank; Described storage tank inwall uses sandblasting to make it coarse.
2. the long polycrystalline method of silicon chip back side according to claim 1, is characterized in that, described storage tank inner wall roughness is 2-4 μm.
3. the long polycrystalline method of silicon chip back side according to claim 1, is characterized in that, uses the inwall of storage tank described in the sandblasting of silicon carbide powder.
4. the long polycrystalline method of silicon chip back side according to claim 3, is characterized in that, the particle diameter of described silicon carbide powder is 220-260 order.
5. the long polycrystalline method of silicon chip back side according to claim 1, is characterized in that, the spacing of described storage tank is 2-4mm.
6. the long polycrystalline method of silicon chip back side according to claim 5, is characterized in that, the spacing of described storage tank is 2.5-4.5mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410370757.XA CN105316760A (en) | 2014-07-30 | 2014-07-30 | Method for growing polycrystals on backs of silicon wafers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410370757.XA CN105316760A (en) | 2014-07-30 | 2014-07-30 | Method for growing polycrystals on backs of silicon wafers |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105316760A true CN105316760A (en) | 2016-02-10 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410370757.XA Pending CN105316760A (en) | 2014-07-30 | 2014-07-30 | Method for growing polycrystals on backs of silicon wafers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105316760A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601594A (en) * | 2016-12-29 | 2017-04-26 | 上海合晶硅材料有限公司 | Method for growing poly-crystal on surface of silicon wafer |
| CN111575790A (en) * | 2020-05-14 | 2020-08-25 | 中环领先半导体材料有限公司 | Process for reducing edge breakage rate of polycrystalline vapor deposition of silicon single crystal wafer |
-
2014
- 2014-07-30 CN CN201410370757.XA patent/CN105316760A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106601594A (en) * | 2016-12-29 | 2017-04-26 | 上海合晶硅材料有限公司 | Method for growing poly-crystal on surface of silicon wafer |
| CN111575790A (en) * | 2020-05-14 | 2020-08-25 | 中环领先半导体材料有限公司 | Process for reducing edge breakage rate of polycrystalline vapor deposition of silicon single crystal wafer |
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Legal Events
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| C06 | Publication | ||
| PB01 | Publication | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160210 |