CN105304660B - 成像装置及其驱动方法 - Google Patents
成像装置及其驱动方法 Download PDFInfo
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- CN105304660B CN105304660B CN201510441094.0A CN201510441094A CN105304660B CN 105304660 B CN105304660 B CN 105304660B CN 201510441094 A CN201510441094 A CN 201510441094A CN 105304660 B CN105304660 B CN 105304660B
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- semiconductor region
- type semiconductor
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- semiconductor regions
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- 238000003384 imaging method Methods 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title abstract description 15
- 239000004065 semiconductor Substances 0.000 claims abstract description 238
- 239000003990 capacitor Substances 0.000 claims abstract description 73
- 238000009792 diffusion process Methods 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims description 41
- 239000012212 insulator Substances 0.000 claims description 34
- 238000002955 isolation Methods 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 15
- 230000008859 change Effects 0.000 claims description 3
- 210000000746 body region Anatomy 0.000 claims 1
- 230000005611 electricity Effects 0.000 claims 1
- 239000004744 fabric Substances 0.000 claims 1
- 230000005684 electric field Effects 0.000 description 8
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 230000002093 peripheral effect Effects 0.000 description 7
- 108091006146 Channels Proteins 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8023—Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/803—Pixels having integrated switching, control, storage or amplification elements
- H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
- H10F39/80377—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the channel of the transistor, e.g. channel having a doping gradient
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/811—Interconnections
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014151123A JP6406912B2 (ja) | 2014-07-24 | 2014-07-24 | 撮像装置並びにその駆動方法 |
| JP2014-151123 | 2014-07-24 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105304660A CN105304660A (zh) | 2016-02-03 |
| CN105304660B true CN105304660B (zh) | 2018-06-15 |
Family
ID=53793969
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510441094.0A Active CN105304660B (zh) | 2014-07-24 | 2015-07-24 | 成像装置及其驱动方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US9641778B2 (enExample) |
| EP (1) | EP2978021B1 (enExample) |
| JP (1) | JP6406912B2 (enExample) |
| CN (1) | CN105304660B (enExample) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6700656B2 (ja) * | 2014-10-31 | 2020-05-27 | キヤノン株式会社 | 撮像装置 |
| JP6727830B2 (ja) * | 2016-02-09 | 2020-07-22 | キヤノン株式会社 | 撮像装置 |
| JP6664259B2 (ja) * | 2016-03-31 | 2020-03-13 | キヤノン株式会社 | 撮像装置、撮像システム、および、移動体 |
| US10510820B2 (en) | 2016-09-09 | 2019-12-17 | Sony Semiconductor Solutions Corporation | Display device and electronic apparatus |
| CN109804466B (zh) * | 2016-10-07 | 2023-05-05 | 国立大学法人东北大学 | 光传感器及其信号读出方法和固体摄像装置及其信号读出方法 |
| US10110840B2 (en) * | 2016-10-25 | 2018-10-23 | Semiconductor Components Industries, Llc | Image sensor pixels with overflow capabilities |
| DE102017221719B4 (de) * | 2017-12-01 | 2023-03-30 | Bruker Axs Gmbh | Optisches emissionsspektrometer mit kaskadierten ladungsspeichern |
| US10559614B2 (en) * | 2018-03-09 | 2020-02-11 | Semiconductor Components Industries, Llc | Dual conversion gain circuitry with buried channels |
| US11025848B2 (en) * | 2018-08-31 | 2021-06-01 | Canon Kabushiki Kaisha | Photoelectric conversion device, imaging system, moving body, and stackable semiconductor device |
| JP2020068267A (ja) * | 2018-10-23 | 2020-04-30 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像装置 |
| DE102020111562A1 (de) * | 2020-04-28 | 2021-10-28 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
| JP2023064358A (ja) * | 2021-10-26 | 2023-05-11 | ソニーセミコンダクタソリューションズ株式会社 | 撮像素子、電子機器 |
| DE102021128022B3 (de) | 2021-10-27 | 2023-02-02 | Arnold & Richter Cine Technik Gmbh & Co. Betriebs Kg | Bildsensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877847A (zh) * | 2005-06-07 | 2006-12-13 | 东部电子株式会社 | Cmos图像传感器及其制造方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3455655B2 (ja) * | 1997-03-03 | 2003-10-14 | 株式会社東芝 | 固体撮像装置および固体撮像装置応用システム |
| JP4459098B2 (ja) * | 2005-03-18 | 2010-04-28 | キヤノン株式会社 | 固体撮像装置及びカメラ |
| JP4677258B2 (ja) * | 2005-03-18 | 2011-04-27 | キヤノン株式会社 | 固体撮像装置及びカメラ |
| EP2942813B1 (en) * | 2006-08-09 | 2020-09-30 | Tohoku University | Optical sensor and solid-state imaging device |
| JP2008205639A (ja) * | 2007-02-16 | 2008-09-04 | Texas Instr Japan Ltd | 固体撮像装置及びその動作方法 |
| US8072015B2 (en) * | 2007-06-04 | 2011-12-06 | Sony Corporation | Solid-state imaging device and manufacturing method thereof |
| JP2008305983A (ja) * | 2007-06-07 | 2008-12-18 | Nikon Corp | 固体撮像素子 |
| JP5213501B2 (ja) * | 2008-04-09 | 2013-06-19 | キヤノン株式会社 | 固体撮像装置 |
| JP5521682B2 (ja) * | 2010-02-26 | 2014-06-18 | ソニー株式会社 | 固体撮像装置、固体撮像装置の駆動方法、及び、電子機器 |
| US9200956B2 (en) * | 2010-06-27 | 2015-12-01 | Sri International | Readout transistor circuits for CMOS imagers |
| JP5570377B2 (ja) * | 2010-09-30 | 2014-08-13 | キヤノン株式会社 | 固体撮像装置 |
| TWI456990B (zh) * | 2011-04-08 | 2014-10-11 | Pixart Imaging Inc | 高動態範圍影像感測電路及高動態範圍影像讀取方法 |
| FR2979485B1 (fr) * | 2011-08-26 | 2016-09-09 | E2V Semiconductors | Capteur d'image a regroupement de pixels |
| WO2013176007A1 (ja) * | 2012-05-25 | 2013-11-28 | ソニー株式会社 | 撮像素子、駆動方法、および電子装置 |
| US8957359B2 (en) * | 2012-10-12 | 2015-02-17 | Omnivision Technologies, Inc. | Compact in-pixel high dynamic range imaging |
| US10497737B2 (en) * | 2013-05-30 | 2019-12-03 | Caeleste Cvba | Enhanced dynamic range imaging |
-
2014
- 2014-07-24 JP JP2014151123A patent/JP6406912B2/ja not_active Expired - Fee Related
-
2015
- 2015-07-09 EP EP15176034.5A patent/EP2978021B1/en active Active
- 2015-07-21 US US14/805,302 patent/US9641778B2/en not_active Expired - Fee Related
- 2015-07-24 CN CN201510441094.0A patent/CN105304660B/zh active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1877847A (zh) * | 2005-06-07 | 2006-12-13 | 东部电子株式会社 | Cmos图像传感器及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105304660A (zh) | 2016-02-03 |
| EP2978021B1 (en) | 2019-11-06 |
| EP2978021A3 (en) | 2016-04-13 |
| JP6406912B2 (ja) | 2018-10-17 |
| EP2978021A2 (en) | 2016-01-27 |
| JP2016025332A (ja) | 2016-02-08 |
| US20160028986A1 (en) | 2016-01-28 |
| US9641778B2 (en) | 2017-05-02 |
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| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |