CN105264635B - 用于利用带电粒子束的倾斜或掠射研磨操作的基准设计 - Google Patents

用于利用带电粒子束的倾斜或掠射研磨操作的基准设计 Download PDF

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Publication number
CN105264635B
CN105264635B CN201380074020.7A CN201380074020A CN105264635B CN 105264635 B CN105264635 B CN 105264635B CN 201380074020 A CN201380074020 A CN 201380074020A CN 105264635 B CN105264635 B CN 105264635B
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China
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sample
depth
features
interest
charged particle
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Chinese (zh)
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CN105264635A (zh
Inventor
S.斯通
S.H.李
J.布拉克伍德
M.施米德
H.H.金
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FEI Co
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FEI Co
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/221—Image processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/22—Treatment of data
    • H01J2237/226—Image reconstruction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/26—Electron or ion microscopes
    • H01J2237/28—Scanning microscopes
    • H01J2237/2813—Scanning microscopes characterised by the application
    • H01J2237/2814—Measurement of surface topography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3174—Etching microareas
    • H01J2237/31745—Etching microareas for preparing specimen to be viewed in microscopes or analyzed in microanalysers

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
CN201380074020.7A 2012-12-31 2013-12-30 用于利用带电粒子束的倾斜或掠射研磨操作的基准设计 Active CN105264635B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261747515P 2012-12-31 2012-12-31
US201261747516P 2012-12-31 2012-12-31
US61/747515 2012-12-31
US61/747516 2012-12-31
PCT/US2013/078315 WO2014106182A1 (en) 2012-12-31 2013-12-30 Fiducial design for tilted or glancing mill operations with a charged particle beam

Publications (2)

Publication Number Publication Date
CN105264635A CN105264635A (zh) 2016-01-20
CN105264635B true CN105264635B (zh) 2018-11-20

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Country Status (7)

Country Link
US (2) US10026590B2 (cg-RX-API-DMAC7.html)
EP (1) EP2939254A4 (cg-RX-API-DMAC7.html)
JP (1) JP6598684B2 (cg-RX-API-DMAC7.html)
KR (1) KR102148284B1 (cg-RX-API-DMAC7.html)
CN (1) CN105264635B (cg-RX-API-DMAC7.html)
TW (2) TWI686837B (cg-RX-API-DMAC7.html)
WO (1) WO2014106182A1 (cg-RX-API-DMAC7.html)

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KR102618372B1 (ko) * 2018-10-23 2023-12-27 어플라이드 머티어리얼스, 인코포레이티드 대면적 기판들을 위한 집속 이온 빔 시스템
WO2020100179A1 (ja) * 2018-11-12 2020-05-22 株式会社日立ハイテク 画像形成方法及び画像形成システム
CN113169084B (zh) * 2018-11-22 2024-08-27 应用材料公司 用于在基板上进行关键尺寸测量的方法、及用于检测及切割基板上的电子装置的设备
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JP2021086793A (ja) * 2019-11-29 2021-06-03 株式会社日立ハイテク 荷電粒子ビームシステム、荷電粒子線装置における焦点位置を自動で探索する範囲を決定する方法、およびコンピュータシステムに、荷電粒子線装置における焦点位置を自動で探索する範囲を決定させるためのプログラムを記録した非一時的記憶媒体
EP4118674A1 (en) * 2020-03-13 2023-01-18 Carl Zeiss SMT GmbH Method of cross-section imaging of an inspection volumes in wafer
DE102021201686A1 (de) * 2020-11-17 2022-05-19 Carl Zeiss Microscopy Gmbh Verfahren und Vorrichtung zum Präparieren einer mikroskopischen Probe aus einer Volumenprobe
KR20230119137A (ko) * 2020-12-15 2023-08-16 에이에스엠엘 네델란즈 비.브이. 패터닝된 기판의 이미지에 기반하여 3차원 데이터를 판정하기 위한 장치 및 방법
CN114689630B (zh) * 2020-12-30 2025-12-02 Fei公司 用于对三维特征进行成像的方法和系统
EP4292115A4 (en) * 2021-02-15 2025-06-25 E.A. Fischione Instruments, Inc. System and method for uniform ion milling
US12056865B2 (en) * 2021-10-07 2024-08-06 Carl Zeiss Smt Gmbh Wafer-tilt determination for slice-and-image process
US20240153738A1 (en) * 2022-11-08 2024-05-09 Applied Materials Israel Ltd. Precision in stereoscopic measurements using a pre-deposition layer
EP4379348A1 (en) * 2022-11-30 2024-06-05 Fei Company Method for micromachining a biological sample for creating a lamella for analysis in a cryo-charged particle microscope
JPWO2024134744A1 (cg-RX-API-DMAC7.html) * 2022-12-20 2024-06-27
US12451323B2 (en) * 2023-04-06 2025-10-21 Applied Materials Israel Ltd. Flow for high resolution stereoscopic measurements
CN116337903B (zh) * 2023-04-11 2023-12-22 胜科纳米(苏州)股份有限公司 一种3dnada闪存垂直通道的超薄电镜样品及其制样方法
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Also Published As

Publication number Publication date
TW201907437A (zh) 2019-02-16
US20150357159A1 (en) 2015-12-10
US20180301319A1 (en) 2018-10-18
EP2939254A1 (en) 2015-11-04
EP2939254A4 (en) 2016-09-07
US11315756B2 (en) 2022-04-26
CN105264635A (zh) 2016-01-20
US10026590B2 (en) 2018-07-17
JP2016503890A (ja) 2016-02-08
TW201442054A (zh) 2014-11-01
KR102148284B1 (ko) 2020-08-26
KR20150102119A (ko) 2015-09-04
TWI686837B (zh) 2020-03-01
WO2014106182A1 (en) 2014-07-03
TWI643235B (zh) 2018-12-01
JP6598684B2 (ja) 2019-10-30

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