CN105259565B - A kind of semiconductor devices radiation dose rate effect laser simulation system - Google Patents
A kind of semiconductor devices radiation dose rate effect laser simulation system Download PDFInfo
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- CN105259565B CN105259565B CN201510592984.1A CN201510592984A CN105259565B CN 105259565 B CN105259565 B CN 105259565B CN 201510592984 A CN201510592984 A CN 201510592984A CN 105259565 B CN105259565 B CN 105259565B
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Abstract
The invention discloses a kind of semiconductor devices radiation dose rate effect laser simulation system, the invention belongs to semiconductor devices irradiation effects field.The simulation system includes pulse laser and produced and regulating system, test system and control system.The present invention utilizes focusing objective len and laser beam expanding lens regulation laser spot size, the position of tested semiconductor devices is controlled by three-axis accurate motion platform, both semiconductor devices sensitive layer and sensitizing range can have been positioned and then studied its local effect, also semiconductor devices group effect can be studied, it effectively compensate for the deficiency of existing large-scale ground device and other laser simulation systems, reduce experimentation cost, improve test efficiency, shorten the radiation tolerance design cycle, to study semicoductor radiating dose rate effect, targetedly carry out radiation tolerance design and effective means is provided.
Description
Technical field
The invention belongs to semiconductor devices irradiation effects field, relates generally to a kind of semi-conductor electronic device close rate
Effect laser simulation system.
Background technology
Semiconductor devices radiation dose rate effect study is one of important research content of Radiation Hardened Electronics.This grinds at present
Study carefully and depend on large-scale ground radiation simulation device.Certain limitation be present in this mode, such as actinometry is limited in scope,
Parameter regulation is extremely difficult, change kinds of radiation and the time of energy demand it is long, have damage to measured device, be difficult to accurately carry
For device time under the radiation and spatial information, need strict radiation shield and safeguard measure etc..It is difficult to meet scientific research people
Member design initial stage, flexibly, fast, safely to the radiation dose rate effect of semiconductor devices tested in the lab and
The demand of research.Because laser can be produced in semiconductor devices with electrical characteristic, mode of laser similar in some radiation effects
Plan system can be used for semiconductor devices radiation effect sensitivity testses, the batch screening of radiation hardened component and safeguard procedures
In checking.And current external laser analog dose rate effect system presence can not position sensitive layer in semiconductor devices and
The problems such as sensing unit, limit its application in practice.
The content of the invention
It is insufficient for the inherent limitations of ground simulator, and existing for present laser simulation dose rate effect system,
The present invention proposes a kind of semiconductor devices radiation dose rate effect for positioning semiconductor devices sensitive layer and sensitive position
Laser simulation system.
Technical scheme is as follows：
A kind of semiconductor devices radiation dose rate effect laser simulation system, it is characterised in that：Produced including pulse laser
With regulating system, test system and control system；
Laser produces and regulating system, is adjusted for producing pulse laser, and to laser energy；
Test system, for laser to be formed into operation light spot irradiation on the semiconductor device, and measure dose rate effect
Electric signal；
Control system, for controlling energy attenuation, sensitive position positioning and data acquisition in simulation process.
The laser produces includes pulse laser, optical substrate, double-deck roller combined filters, variable with regulating system
Attenuator, unpolarized Amici prism；Pulse laser produces pulse laser, laser successively after the reflection of optical substrate, then according to
It is secondary to carry out energy attenuation and regulation by double-deck roller combined filters, variable attenuator, then by unpolarized Amici prism
The equal laser I of two beam energies, laser II are formed, wherein laser I enters test system, the metering-in control system of laser II.
The test system includes laser energy meter, CCD camera, illumination light and imports component, coaxial-observation lens barrel, laser
Import component, automatically controlled cut bank, focusing objective len or beam expanding lens, oscillograph, measured device, vacuum adsorption table, three-dimensional motion precision
Control platform, dc source, display；Laser energy meter receives to be produced and the laser I after regulating system, laser by laser
I imports component by laser successively reaches focusing objective len or beam expanding lens, is formed after focusing objective len focuses on or beam expanding lens expands
Operation light spot reaches measured device, the locally or globally irradiation to measured device, and measured device produces after absorbing the energy of laser I
Raw radiation dose rate effect signal, then caught and measure by oscillograph；The equivalent electric signal of radiation dose rate is laser emission
Cause photoelectric current.
The control system includes controller, data collecting card；Controller by controlling the decay size of variable attenuator,
And then control the energy of working laser；Controller adjusts measured device and stroke by controlling three-dimensional precise displacement platform
Operation light spot relative position；Controller controls oscillograph test data collection and CCD by control data capture card
Camera image gathers；Controller controls the size of operation light spot by controlling automatically controlled cut bank.
Further, the laser produces comprises at least an optical substrate with regulating system, and optical substrate is wedge shape
Optical substrate, or the planar substrates of the second face plating anti-reflection film, or right-angle prism.
Preferably, the pulse width of the pulse laser is less than 10ns, and caused optical maser wavelength is 532nm, or
1064nm；The pulse laser can be nanosecond laser.
Preferably, the variable attenuator is made up of a type variable spectroscope and an optics revision board, either
It is made up of a wavelength plate of zero level 1/2 and a polarization splitting prism.
Preferably, optical filter used in the double-deck roller combined filters is absorption-type optical filter.
Preferably, under identical environment, do not change over, the reflection and transmission of the unpolarized Amici prism is than optimal
1：1.
Unemployed bypass laser is fettered by laser traps in the laser as caused by laser generation with regulating system.
A diaphragm between the optical substrate and double-deck roller combined filters, diaphragm are used to filter out veiling glare and bypass
Laser.
The three-dimensional motion precision control platform repetitive positioning accuracy is more than 0.01 μm.
The band of the oscillograph is wider than 4GHz.
The operation light spot diameter is less than 40mm.
Beneficial effects of the present invention are as follows：
Semiconductor devices radiation dose rate effect laser simulation system proposed by the present invention switches thing by automatically controlled cut bank
Mirror and beam expanding lens, neatly select that hot spot is focused or expanded.Simulation system proposed by the present invention is a kind of can be used in fact
The simulation system of room research is tested, can be reduced experimentation cost as effective supplement of large-scale ground analogue means, improve experiment
Efficiency, shorten the design cycle of radiation tolerance design.This system overcomes the deficiency of existing external simulation system, can determine
Sensitive layer and sensing unit in the semiconductor devices of position, and laser energy can be continuously adjusted on a large scale.
Brief description of the drawings
Fig. 1 is present example semiconductor devices radiation dose rate effect laser simulation system schematic diagram；
Fig. 2 is that the laser of the present invention passes through the reflection and transmission situation schematic diagram of wedge-shaped optical substrate；
Fig. 3 is the schematic diagram of the double-deck optical filter roller of the present invention；
Fig. 4 is the schematic diagram of the variable attenuator form I of the present invention；
Fig. 5 is the variable attenuator form ii schematic diagram of the present invention.
Wherein, reference is：1 pulse laser, 2 the Ith optical substrates, 3 the IIth optical substrates, 4 double-deck roller combinations
Optical filter, 5 variable attenuators, 6 unpolarized Amici prisms, 7 laser energy meters, 8 CCD cameras, 9 illumination lights importing component, 10
Coaxial-observation lens barrel, 11 laser import component, 12 automatically controlled cut banks, 13 focusing objective lens or beam expanding lens, 14 oscillographs, 15 tested devices
Part, the three-dimensional motion precision control platform of 16 vacuum adsorption table 17,18 dc sources, 19 displays, 20 controllers, 21 data acquisitions
Card, the first surface of 25 wedge-shaped optical substrates, the second surface of 26 wedge-shaped optical substrates, the reflected light of 27 first surfaces, 28 the
The reflected light on two surfaces, 29 transmitted lights, 30 optical filter mounting holes, 31 first multilayer filter rollers, 32 variable spectroscopes, 33 amendments
Optical flat, 34 the Ith shadow shields, 35 the IIth shadow shields, the wavelength plate of 36 zero level 1/2,37 polarization splitting prisms.
Embodiment
Present example is described in detail below in conjunction with accompanying drawing.
Referring to Fig. 1, semiconductor devices radiation dose rate effect laser simulation system includes pulse laser and produced with adjusting system
System 22, test system 23 and control system 24.
Laser produces includes pulse laser 1, the Ith optical substrate 2, the IIth optical substrate 3, double-deck rolling with regulating system 22
Take turns combined filters 4, variable attenuator 5, unpolarized Amici prism 6；
Test system 23 include laser energy meter 7, CCD camera 8, illumination light import component 9, coaxial-observation lens barrel 10,
Laser imports component 11, automatically controlled cut bank 12, focusing objective len or beam expanding lens 13, oscillograph 14, measured device 15, vacuum adsorption table
16th, three-dimensional motion precision control platform 17, dc source 18, display 19；Control system includes controller 20, data collecting card
21；
Pulse laser 1 produces pulse laser, and laser pulse width be ns levels, and repetition rate is adjustable, optical maser wavelength for 532nm and
1064nm, polarization state are linearly polarized photon.
Referring to accompanying drawing 2, pulsed laser irradiation to wedge-shaped optical substrate, the intrinsic 3.5%-4% reflectivity of glass surface is utilized
Characteristic, the reflected laser energy 27 of first surface is attenuated the 3.5%-4% for incident laser energy, wedge-shaped optical base in system
The quantity of plate can adjust according to actual conditions, realize safe and simple, laser energy of expeditiously decaying.
When the energy value of pulse laser caused by pulse laser 1 is, the Ith optical substrate 2 reflectivity be, the IIth
The reflectivity of optical substrate 3 is alsoWhen, after the reflection of the Ith optical substrate 2, the energy value of laser decays to, then according to
After being mapped to the reflection of the IIth optical substrate 3, laser energy value isLaser.
Referring to accompanying drawing 3, the optical filter with different transmitances is arranged on optical filter mounting hole 30, two layers of roller of rotation can
To select a variety of transmitances to combine, so that the pulse laser after the reflection of wedge-shaped optical substrate, by double-deck roller combined filters 4
Decay, realizes laser energy value coarse adjustment, energy value isLaser decay after double-deck roller combined filters 4 into tool
There is the laser of different-energy value.
, will be by variable attenuator 5, by variable attenuation after pulse laser is decayed by double-deck roller combined filters 4
Device 5 decays into the working laser of continuously adjustable energy.
Variable attenuator 5 has two kinds of forms：
The form I of variable attenuator 5 motor driving Rotary Variable spectroscope 32, changes linear polarization pulse laser referring to Fig. 4
Incident angle realizes that energy is continuous accurate adjustable so as to change the light quantity ratio through light beam and the reflected beams.Amendment optics is put down
The anglec of rotation of plate 33 is identical with variable spectroscope, and direction of rotation is on the contrary, substrate is thick during so as to compensate variable spectroscope angulation change
Light beam translation caused by degree and refraction action.
The form ii of variable attenuator 5 the motor driving rotation wavelength plate 36 of zero level 1/2, changes linear polarization pulse referring to Fig. 5
The polarization direction of laser, so as to which laser is by changing the light quantity ratio of transmitted light beam and the reflected beams after polarization splitting prism 37,
Realize that energy is continuous accurate adjustable.
After laser is by unpolarized Amici prism 6, reflection laser measures laser energy by the collection of laser energy meter 7, transmits
Laser is coupled into the optical axis of coaxial-observation lens barrel 10 after laser imports component 11.Before the experiments were performed, it is necessary to reaching
The laser of measured device 15 carries out energy calibration, and calibration method is as follows：The Ith laser energy meter is placed at laser energy meter 7 to visit
Head, the IIth laser energy meter probe is placed in the position of measured device 15, adjusts double-deck halo combined filters 4 and variable attenuation
Device 5 changes laser energy, while gathers the data of the Ith and the IIth energy meter probe, is contrasted, obtains two energy meter readings
Relation.In formal test, the IIth energy meter probe is removed, the real time readouts popped one's head in using the Ith energy meter, utilizes foregoing foundation
The mathematical relationship of energy meter probe I and II, obtains the laser energy for inciding device surface.
Focusing objective len or beam expanding lens 13 are arranged on automatically controlled cut bank 12, switch different numerical apertures focusing objective len and
The beam expanding lens that difference expands multiple carries out spot size adjustment.The numerical aperture of object lens, whereinFor object lens pupil footpath, spot diameter of the laser after object lens focus on is.In the present invention, there are multiple differences
NA objective, the maximum numerical aperture of object lens is minimum light spot a diameter of 0.8 of 0.8, the 532nm laser after object lens
μm.In the present invention, the beam expanding lens of multiple is expanded by multiple differences, the maximum of beam expanding lens expands multiple as 10 times.
Oscillograph 14 catches the tested semiconductor devices of measurement and absorbs radiation dose rate electric signal caused by pulsed laser energy,
Because the pulsewidth of laser pulse is nanosecond, caused radiation dose rate electric signal pulse width is typically from subnanosecond to micro-
Second, therefore the bandwidth of the oscillograph 14 is not less than 4GHz.
Illumination light imports the optical axis that illumination light is coupled into coaxial-observation lens barrel by component 9 by semi-transparent semi-reflecting lens, when for
Test device provide illumination light, two be due to 1064nm laser not in visible-range, so need for provide laser light
The position of spot provides reference.Positional information of the hot spot on element layout after focusing can collect display by CCD camera 8
19, the positional information of focal beam spot is provided in real time.
Three-dimensional motion precision control platform 17 is carried the linear electric motors powered motion guide rail of grating scale feedback by three single shafts
Composition, the repetitive positioning accuracy of each axle is 0.1 μm.Vacuum adsorption table 16 is arranged on three-dimensional motion precision control platform 17, very
There is a number of fine and closely woven aperture on the empty surface of absorptive table 16, is vacuum chamber below aperture, quilt is fixed in a manner of vacuum suction
Survey device 15, this fixed form stabilization and quick detachable measured device.
Data collecting card 21 gathers the shape information that oscillograph 14 captures and the image information of display 19 simultaneously.
Control system 24 controls variable attenuator 5, automatically controlled cut bank 12, three-dimensional motion precision control platform 17 simultaneously, place
The information that reason data collecting card 21 collects.
Claims (14)
- A kind of 1. semiconductor devices radiation dose rate effect laser simulation system, it is characterised in that：Including pulse laser produce with Regulating system（22）, test system（23）And control system（24）；Laser produces and regulating system（22）, it is adjusted for producing pulse laser, and to laser energy；Test system（23）, for laser to be formed into operation light spot irradiation on the semiconductor device, and measure dose rate effect Electric signal；Control system（24）, for controlling energy attenuation, sensitive position positioning and data acquisition in simulation process；The laser produces and regulating system（22）Including pulse laser（1）, optical substrate, double-deck roller combined filters （4）, variable attenuator（5）, unpolarized Amici prism（6）；Pulse laser（1）Pulse laser is produced, laser is successively through optics After the reflection of substrate, then pass through double-deck roller combined filters successively（4）, variable attenuator（5）Energy attenuation and regulation are carried out, Then unpolarized Amici prism is passed through（6）The equal laser I of two beam energies, laser II are formed, wherein laser I enters test system （23）, the metering-in control system of laser II（24）.
- A kind of 2. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The test system（23）Including laser energy meter（7）, CCD camera（8）, illumination light import component（9）, coaxial-observation lens barrel （10）, laser import component（11）, automatically controlled cut bank（12）, focusing objective len or beam expanding lens（13）, oscillograph（14）, measured device （15）, vacuum adsorption table（16）, three-dimensional motion precision control platform（17）, dc source（18）, display（19）；Laser energy meter（7）Receive by laser generation and regulating system（22）Laser I afterwards, laser I pass through laser successively Import component（11）Reach focusing objective len or beam expanding lens（13）, by focusing objective len focusing or beam expanding lens（13）Work is formed after expanding Make hot spot and reach measured device（15）, to measured device（15）Locally or globally irradiation, measured device（15）Absorb laser I Energy after produce radiation dose rate effect signal, then by oscillograph（14）Catch measurement；The radiation dose rate equivalent electric Signal is that laser emission causes photoelectric current.
- A kind of 3. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The control system（24）Including controller（20）, data collecting card（21）；Controller（20）By controlling variable attenuator（5）Decay size, and then control working laser energy；Controller （20）By controlling three-dimensional precise displacement platform（17）, and then adjust measured device（15）The relative position with the operation light spot of stroke Put；Controller（20）Pass through control data capture card（21）, and then control oscillograph（14）Test data collection and CCD camera （8）IMAQ；Controller（20）By controlling automatically controlled cut bank（12）, and then control the size of operation light spot.
- A kind of 4. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The laser produces and regulating system（22）Including at least an optical substrate, and optical substrate is wedge-shaped optical substrate, or It is the planar substrates of the second face plating anti-reflection film, or right-angle prism.
- A kind of 5. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The pulse laser（1）Pulse width be less than 10ns, caused optical maser wavelength is 532nm, or 1064nm.
- 6. a kind of semiconductor devices radiation dose rate effect laser simulation system, its feature exist according to claim 1 or 5 In：The pulse laser（1）For nanosecond laser.
- A kind of 7. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The variable attenuator（5）It is made up of a type variable spectroscope and an optics revision board, or by a zero level 1/2 Wavelength plate and a polarization splitting prism form.
- A kind of 8. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The double-deck roller combined filters（4）Optical filter used is absorption-type optical filter.
- A kind of 9. semiconductor devices radiation dose rate effect laser simulation system according to claim 1, it is characterised in that： The unpolarized Amici prism（6）The stable reflection and transmission ratio that has be 1：1.
- 10. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 1, its feature exist In：By laser generation and regulating system（22）Unemployed bypass laser is fettered by laser traps in caused laser.
- 11. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 1, its feature exist In：The optical substrate and double-deck roller combined filters（4）Between add a diaphragm, diaphragm be used for filter out veiling glare and side Road laser.
- 12. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, its feature exist In：The three-dimensional motion precision control platform（17）Repetitive positioning accuracy is more than 0.01 μm.
- 13. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, its feature exist In：The oscillograph（14）Band be wider than 4GHz.
- 14. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 1, its feature exist In：The operation light spot diameter is less than 40mm.
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