CN105259565A - Laser simulation system for semiconductor device radiation dose rate effect - Google Patents
Laser simulation system for semiconductor device radiation dose rate effect Download PDFInfo
- Publication number
- CN105259565A CN105259565A CN201510592984.1A CN201510592984A CN105259565A CN 105259565 A CN105259565 A CN 105259565A CN 201510592984 A CN201510592984 A CN 201510592984A CN 105259565 A CN105259565 A CN 105259565A
- Authority
- CN
- China
- Prior art keywords
- laser
- dose rate
- radiation dose
- rate effect
- semiconductor devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Lasers (AREA)
- Laser Surgery Devices (AREA)
- Laser Beam Processing (AREA)
Abstract
The invention discloses a laser simulation system for a semiconductor device radiation dose rate effect, and relates to the field of semiconductor device radiation dose rate effect research. The simulation system comprises a pulse laser generating and adjusting system, a testing system and a control system. A focusing object lens and a laser beam expanding lens are used for adjusting the size of a laser spot. The position of a detected semiconductor device is controlled through a three-axis precise motion platform, and a sensitive layer and a sensitive area of the semiconductor device can be positioned, so that the local effect of the semiconductor device can be researched, the integral effect of the semiconductor device can also be researched, defects of an existing ground device and other laser simulation systems are effectively overcome, the testing cost is lowered, the testing efficiency is improved, the anti-radiation reinforcing design period is shortened, and effective means are provided for researching the semiconductor device radiation dose rate effect and pointedly carrying out anti-radiation reinforcing design.
Description
Technical field
The invention belongs to semiconductor devices irradiation effects field, relate generally to a kind of semi-conductor electronic device dose rate effect laser simulation system.
Background technology
Semiconductor devices radiation dose rate effect study is one of important research content of Radiation Hardened Electronics.This research at present depends on large-scale ground radiation simulation device.There is certain limitation in this mode, such as actinometry is limited in scope, parameter regulates very difficult, to change kinds of radiation and the energy demand time to grow, measured device is had to damage, is difficult to accurately provide device Time and place information under the radiation, need strict radiation shield and safeguard measure etc.Be difficult to meet scientific research personnel at the design initial stage, in the lab flexibly, fast, safely to the demand that the radiation dose rate effect of semiconductor devices is tested and studied.Because laser can produce with the close electrical characteristic of some radiation effect in semiconductor devices, laser simulation system can be used for semiconductor devices radiation effect sensitivity tests, radiation hardened component batch screening and safeguard procedures checking in.And the laser analog dose rate effect system of present exists the problem such as sensitive layer and sensing unit can not located in semiconductor devices, limit its application in practice.
Summary of the invention
For the inherent limitations of ground simulator, and the deficiency that present laser simulation dose rate effect system exists, the present invention proposes a kind of semiconductor devices radiation dose rate effect laser simulation system of locating semiconductor devices sensitive layer and sensitive position.
Technical scheme of the present invention is as follows:
A kind of semiconductor devices radiation dose rate effect laser simulation system, is characterized in that: comprise pulse laser and produce and regulating system, test macro and control system;
Laser produces and regulating system, for generation of pulse laser, and regulates laser energy;
Test macro, for laser is formed operation light spot irradiation on the semiconductor device, and measures the electric signal of dose rate effect;
Control system, for the energy attenuation in control simulation process, sensitive position location and data acquisition.
Described laser produces and comprises pulsed laser, optical substrate, double-deck roller combined filters, variable attenuator, unpolarized Amici prism with regulating system; Pulsed laser produces pulse laser, laser is successively after the reflection of optical substrate, energy attenuation and adjustment is carried out successively again through double-deck roller combined filters, variable attenuator, then the equal laser of two beam energies I, laser II is formed through unpolarized Amici prism, wherein laser I enters test macro, laser II metering-in control system.
Described test macro comprises laser energy meter, CCD camera, illumination light importing assembly, coaxial-observation lens barrel, laser importing assembly, automatically controlled cut bank, focusing objective len or beam expanding lens, oscillograph, measured device, vacuum adsorption table, three-dimensional motion precise hard_drawn tuhes platform, direct supply, display; Laser energy meter receives the laser I after laser generation with regulating system, laser I imports assembly through laser successively and arrives focusing objective len or beam expanding lens, after focusing objective len focuses on or beam expanding lens expands, form operation light spot arrive measured device, to local or the WBR of measured device, produce radiation dose rate effect signal after the energy of measured device absorbing laser I, then caught by oscillograph and measure; Described radiation dose rate equivalent electric signal is that laser emission causes photocurrent.
Described control system comprises controller, data collecting card; Controller by controlling the decay size of variable attenuator, and then controls the energy of working laser; Controller is by controlling three-dimensional precise displacement platform, and then the relative position of the operation light spot of adjustment measured device and stroke; Controller by control data capture card, and then controls oscillograph test data collection and the collection of CCD camera image; Controller by controlling automatically controlled cut bank, and then controls the size of operation light spot.
Further, described laser produces and at least comprises an optical substrate with regulating system, and optical substrate is wedge-shaped optical substrate, or the planar substrates of second plating anti-reflection film, or right-angle prism.
Preferably, the pulse width of described pulsed laser is less than 10ns, and the optical maser wavelength of generation is 532nm, or 1064nm; Described pulsed laser can be nanosecond laser.
Preferably, described variable attenuator is made up of a type variable spectroscope and an optics revision board, or is made up of zero level 1/2 wavelength plate and a polarization splitting prism.
Preferably, described double-deck roller combined filters optical filter used is absorption-type optical filter.
Preferably, under equivalent environment, do not change in time, the reflection and transmission of described unpolarized Amici prism is 1:1 than optimum.
Produced unemployed bypass laser in the laser produced with regulating system to be fettered by laser traps by laser.
A diaphragm between described optical substrate and double-deck roller combined filters, diaphragm is used for filtering parasitic light and bypass laser.
Described three-dimensional motion precise hard_drawn tuhes platform repetitive positioning accuracy is greater than 0.01 μm.
Described oscillographic band is wider than 4GHz.
Described operation light spot diameter is less than 40mm.
Beneficial effect of the present invention is as follows:
The semiconductor devices radiation dose rate effect laser simulation system that the present invention proposes switches object lens and beam expanding lens by automatically controlled cut bank, selects neatly to focus on hot spot or expand.The simulation system that the present invention proposes is a kind of simulation system that can be used for laboratory study, can be used as effectively supplementing of large-scale ground analogue means, reduces experimentation cost, improve test efficiency, shorten the design cycle of radiation tolerance design.This system overcomes the deficiency of existing external simulation system, the sensitive layer in semiconductor devices and sensing unit can be located, and laser energy can be regulated continuously on a large scale.
Accompanying drawing explanation
Fig. 1 is example semiconductor device radiation dose rate effect laser simulation system schematic diagram of the present invention;
Fig. 2 is the reflection and transmission situation schematic diagram of laser of the present invention through wedge-shaped optical substrate;
Fig. 3 is the schematic diagram of double-deck optical filter roller of the present invention;
Fig. 4 is the schematic diagram of variable attenuator form I of the present invention;
Fig. 5 is variable attenuator form ii schematic diagram of the present invention.
Wherein, Reference numeral is: 1 pulsed laser, 2 the Ith optical substrates, 3 the IIth optical substrates, 4 double-deck roller combined filters, 5 variable attenuators, 6 unpolarized Amici prisms, 7 lasers energy meter, 8CCD camera, 9 illumination light import assembly, 10 coaxial-observation lens barrels, 11 laser import assembly, 12 automatically controlled cut banks, 13 focusing objective lens or beam expanding lens, 14 oscillographs, 15 measured devices, 16 vacuum adsorption table 17 three-dimensional motion precise hard_drawn tuhes platforms, 18 direct supplys, 19 displays, 20 controllers, 21 data collecting cards, the first surface of 25 wedge-shaped optical substrates, the second surface of 26 wedge-shaped optical substrates, the reflected light of 27 first surfaces, the reflected light of 28 second surfaces, 29 transmitted lights, 30 optical filter mounting holes, 31 ground floor optical filter rollers, 32 variable spectroscopes, 33 revise optical flat, 34 the Ith shadow shields, 35 the IIth shadow shields, 36 zero level 1/2 wavelength plates, 37 polarization splitting prisms.
Embodiment
Below in conjunction with accompanying drawing, example of the present invention is described in detail.
See Fig. 1, semiconductor devices radiation dose rate effect laser simulation system comprises pulse laser and produces and regulating system 22, test macro 23 and control system 24.
Laser produces and comprises pulsed laser 1, the Ith optical substrate 2, the IIth optical substrate 3, double-deck roller combined filters 4, variable attenuator 5, unpolarized Amici prism 6 with regulating system 22;
Test macro 23 comprises laser energy meter 7, CCD camera 8, illumination light importing assembly 9, coaxial-observation lens barrel 10, laser importing assembly 11, automatically controlled cut bank 12, focusing objective len or beam expanding lens 13, oscillograph 14, measured device 15, vacuum adsorption table 16, three-dimensional motion precise hard_drawn tuhes platform 17, direct supply 18, display 19; Control system comprises controller 20, data collecting card 21;
Pulsed laser 1 produces pulse laser, and laser pulse width is ns level, and repetition frequency is adjustable, and optical maser wavelength is 532nm and 1064nm, and polarization state is linearly polarized photon.
See accompanying drawing 2, pulsed laser irradiation is to wedge-shaped optical substrate, the characteristic of the 3.5%-4% reflectivity utilizing glass surface intrinsic, the reflected laser energy 27 of first surface is attenuated the 3.5%-4% into incident laser energy, in system, the quantity of wedge-shaped optical substrate can adjust according to actual conditions, realizes safe, easy, Attenuated laser energy expeditiously.
When the energy value of the pulse laser of pulsed laser 1 generation is
, the Ith optical substrate 2 reflectivity be
, the IIth optical substrate 3 reflectivity be also
time, after the Ith optical substrate 2 reflects, the energy value of laser decays to
, then after being irradiated to the IIth optical substrate 3 reflection, laser energy value is
laser.
See accompanying drawing 3, the optical filter with different transmitance is arranged on optical filter mounting hole 30, rotates two-layer roller and multiple transmitance can be selected to combine, thus the pulse laser after wedge-shaped optical substrate is reflected, decayed by double-deck roller combined filters 4, realize the coarse adjustment of laser energy value, energy value is
laser after double-deck roller combined filters 4, decay into the laser with different-energy value.
After pulse laser is decayed by double-deck roller combined filters 4, will by variable attenuator 5, decaying into through variable attenuator 5 can the working laser of adjusting energy continuously.
Variable attenuator 5 has two kinds of forms:
The form I of variable attenuator 5 is see Fig. 4, and motor drives Rotary Variable spectroscope 32, changes linear polarization pulse laser incident angle thus changes the light quantity ratio through light beam and folded light beam, realizing energy accurately adjustable continuously.Revise optical flat 33 anglec of rotation identical with variable spectroscope, sense of rotation is contrary, thus the light beam translation that during compensate for variable spectroscope Angulation changes, substrate thickness and refraction action cause.
The form ii of variable attenuator 5 is see Fig. 5, motor drives and rotates zero level 1/2 wavelength plate 36, change the polarization direction of linear polarization pulse laser, thus laser is by changing the light quantity ratio of the rear transmitted light beam of polarization splitting prism 37 and folded light beam, realizes energy accurately adjustable continuously.
Laser is by after unpolarized Amici prism 6, and reflects laser records laser energy by laser energy meter 7 collection, and transmission laser imports through laser the optical axis being coupled into coaxial-observation lens barrel 10 after assembly 11.Before the experiments were performed, energy calibration must be carried out to the laser arriving measured device 15, calibration steps is as follows: place the Ith laser energy meter probe at laser energy meter 7 place, the IIth laser energy meter probe is placed in the position of measured device 15, adjust double-deck halo combined filters 4 and variable attenuator 5 changes laser energy, gather the data of the Ith and the IIth energy meter probe simultaneously, contrast, obtain the relation of two energy meter readings.In official test, remove the IIth energy meter probe, utilize the real time readouts of the Ith energy meter probe, utilize the mathematical relation of the energy meter probe I and II of aforementioned foundation, obtain the laser energy inciding device surface.
Focusing objective len or beam expanding lens 13 are arranged on automatically controlled cut bank 12, and the focusing objective len and the different beam expanding lens expanding multiple that switch different numerical aperture carry out spot size adjustment.The numerical aperture of object lens
, wherein
for object lens pupil footpath, the spot diameter of laser after object lens focus on is
.In the present invention, have multiple different NA objective, the maximum numerical aperture of object lens is the minimum light spot diameter of laser after object lens of 0.8,532nm is 0.8 μm.In the present invention, expanded the beam expanding lens of multiple by multiple difference, the maximum multiple that expands of beam expanding lens is 10 times.
Oscillograph 14 catches measures the radiation dose rate electric signal that tested semiconductor devices absorbs pulsed laser energy generation, pulsewidth due to laser pulse is nanosecond, the radiation dose rate electric signal pulse width produced is generally from subnanosecond to microsecond, and therefore described oscillograph 14 bandwidth is not less than 4GHz.
Illumination light imports illumination light is coupled into coaxial-observation lens barrel by assembly 9 optical axis by semi-transparent semi-reflecting lens, one is for test component provides illumination light, two is because the laser of 1064nm is not in visible-range, so need for providing the position of laser facula to provide reference.The positional information of hot spot after focusing on element layout can collect display 19 by CCD camera 8, provides the positional information of focal beam spot in real time.
The linear electric motors actuation movement guide rail that three-dimensional motion precise hard_drawn tuhes platform 17 is fed back with grating scale by three single shafts forms, and the repetitive positioning accuracy of each axle is 0.1 μm.Vacuum adsorption table 16 is arranged on three-dimensional motion precise hard_drawn tuhes platform 17, there is the fine and closely woven aperture of some on vacuum adsorption table 16 surface, be vacuum chamber below aperture, fix measured device 15 in the mode of vacuum suction, this fixed form is stablized and quick detachable measured device.
Data collecting card 21 gathers the image information of shape information that oscillograph 14 captures and display 19 simultaneously.
Control system 24 controls variable attenuator 5, automatically controlled cut bank 12, three-dimensional motion precise hard_drawn tuhes platform 17 simultaneously, the information that process data collecting card 21 collects.
Claims (15)
1. a semiconductor devices radiation dose rate effect laser simulation system, is characterized in that: comprise pulse laser and produce and regulating system (22), test macro (23) and control system (24);
Laser produces and regulating system (22), for generation of pulse laser, and regulates laser energy;
Test macro (23), for laser is formed operation light spot irradiation on the semiconductor device, and measures the electric signal of dose rate effect;
Control system (24), for the energy attenuation in control simulation process, sensitive position location and data acquisition.
2. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 1, is characterized in that: described laser produces and comprises pulsed laser (1), optical substrate, double-deck roller combined filters (4), variable attenuator (5), unpolarized Amici prism (6) with regulating system (22);
Pulsed laser (1) produces pulse laser, laser is successively after the reflection of optical substrate, pass through double-deck roller combined filters (4) more successively, variable attenuator (5) carries out energy attenuation and adjustment, then the equal laser of two beam energies I, laser II is formed through unpolarized Amici prism (6), wherein laser I enters test macro (23), laser II metering-in control system (24).
3. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 1, is characterized in that: described test macro (23) comprises laser energy meter (7), CCD camera (8), illumination light importing assembly (9), coaxial-observation lens barrel (10), laser importing assembly (11), automatically controlled cut bank (12), focusing objective len or beam expanding lens (13), oscillograph (14), measured device (15), vacuum adsorption table (16), three-dimensional motion precise hard_drawn tuhes platform (17), direct supply (18), display (19);
Laser energy meter (7) receives the laser I after laser generation with regulating system (22), laser I imports assembly (11) through laser successively and arrives focusing objective len or beam expanding lens (13), after focusing objective len focuses on or beam expanding lens (13) expands, formation operation light spot arrives measured device (15), to local or the WBR of measured device (15), produce radiation dose rate effect signal after the energy of measured device (15) absorbing laser I, then caught by oscillograph (14) and measure; Described radiation dose rate equivalent electric signal is that laser emission causes photocurrent.
4. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 1, is characterized in that: described control system (24) comprises controller (20), data collecting card (21);
Controller (20) by controlling the decay size of variable attenuator (5), and then controls the energy of working laser; Controller (20) is by controlling three-dimensional precise displacement platform (17), and then the relative position of the operation light spot of adjustment measured device (15) and stroke; Controller (20) by control data capture card (21), and then controls oscillograph (14) test data collection and CCD camera (8) image acquisition; Controller (20) by controlling automatically controlled cut bank (12), and then controls the size of operation light spot.
5. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, it is characterized in that: described laser produces and at least comprises an optical substrate with regulating system (22), and optical substrate is wedge-shaped optical substrate, or the planar substrates of second plating anti-reflection film, or right-angle prism.
6. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, it is characterized in that: the pulse width of described pulsed laser (1) is less than 10ns, the optical maser wavelength of generation is 532nm, or 1064nm.
7. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2 or 6, is characterized in that: described pulsed laser (1) is nanosecond laser.
8. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, it is characterized in that: described variable attenuator (5) is made up of a type variable spectroscope and an optics revision board, or be made up of zero level 1/2 wavelength plate and a polarization splitting prism.
9. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, is characterized in that: described double-deck roller combined filters (4) optical filter used is absorption-type optical filter.
10. a kind of semiconductor devices radiation dose rate effect laser simulation system according to claim 2, is characterized in that: the stable reflection and transmission that has of described unpolarized Amici prism (6) compares for 1:1.
11. a kind of semiconductor devices radiation dose rate effect laser simulation systems according to claim 2, is characterized in that: produced unemployed bypass laser in the laser produced with regulating system (22) by laser and fettered by laser traps.
12. a kind of semiconductor devices radiation dose rate effect laser simulation systems according to claim 2, is characterized in that: add a diaphragm between described optical substrate and double-deck roller combined filters (4), and diaphragm is used for filtering parasitic light and bypass laser.
13. a kind of semiconductor devices radiation dose rate effect laser simulation systems according to claim 3, is characterized in that: described three-dimensional motion precise hard_drawn tuhes platform (17) repetitive positioning accuracy is greater than 0.01 μm.
14. a kind of semiconductor devices radiation dose rate effect laser simulation systems according to claim 3, is characterized in that: the band of described oscillograph (14) is wider than 4GHz.
15. a kind of semiconductor devices radiation dose rate effect laser simulation systems according to claim 1, is characterized in that: described operation light spot diameter is less than 40mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510592984.1A CN105259565B (en) | 2015-09-17 | 2015-09-17 | A kind of semiconductor devices radiation dose rate effect laser simulation system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510592984.1A CN105259565B (en) | 2015-09-17 | 2015-09-17 | A kind of semiconductor devices radiation dose rate effect laser simulation system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105259565A true CN105259565A (en) | 2016-01-20 |
| CN105259565B CN105259565B (en) | 2018-01-26 |
Family
ID=55099326
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510592984.1A Expired - Fee Related CN105259565B (en) | 2015-09-17 | 2015-09-17 | A kind of semiconductor devices radiation dose rate effect laser simulation system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105259565B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105891694A (en) * | 2016-05-04 | 2016-08-24 | 中国工程物理研究院电子工程研究所 | Method for testing of laser-simulation radiation dose rate effects of silicon-based semiconductor transistor |
| CN106771952A (en) * | 2017-01-13 | 2017-05-31 | 中国工程物理研究院电子工程研究所 | A kind of wide band gap semiconductor device radiation effect laser simulation system |
| CN107063481A (en) * | 2017-05-10 | 2017-08-18 | 中国工程物理研究院电子工程研究所 | A kind of second order correlation measuring system of wide bandgap semiconductor quantum dot fluorescence |
| CN107833511A (en) * | 2017-11-15 | 2018-03-23 | 中国工程物理研究院电子工程研究所 | One kind optimization integrated form double light path laser ionisation effect simulation system |
| CN107886823A (en) * | 2017-11-15 | 2018-04-06 | 中国工程物理研究院电子工程研究所 | One kind optimization integrated form monochromatic light road laser ionization effect analog system |
| CN107886820A (en) * | 2017-11-15 | 2018-04-06 | 中国工程物理研究院电子工程研究所 | A kind of integrated form double light path laser ionisation effect simulation system |
| CN107907813A (en) * | 2017-11-15 | 2018-04-13 | 中国工程物理研究院电子工程研究所 | A kind of integrated laser ionisation effect simulation system |
| CN105807305B (en) * | 2016-05-17 | 2018-12-28 | 中国工程物理研究院电子工程研究所 | A kind of double-wavelength pulse laser radiation dose rate effect analog system |
| CN111773558A (en) * | 2020-07-01 | 2020-10-16 | 苏州雷泰医疗科技有限公司 | Method and device for using grating to servo dosage rate and radiotherapy equipment |
| CN113030688A (en) * | 2021-03-09 | 2021-06-25 | 中国科学院国家空间科学中心 | Semiconductor device transient dose rate effect laser simulation device and evaluation system |
| CN113101537A (en) * | 2021-05-25 | 2021-07-13 | 美迪信(天津)有限责任公司 | Pulse for treating meibomian gland dysfunction, modulation method and treatment method |
| CN113425252A (en) * | 2021-06-18 | 2021-09-24 | 耀视(苏州)医疗科技有限公司 | Processing method and processing system for uneven shading of eyeball scanning image |
| CN113985240A (en) * | 2021-10-28 | 2022-01-28 | 中国科学院国家空间科学中心 | Method, system and device for measuring transient radiation induced charge of semiconductor device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202486274U (en) * | 2012-03-13 | 2012-10-10 | 上海理工大学 | Automatic filtering device for ultraviolet detection |
| CN104793228A (en) * | 2015-04-01 | 2015-07-22 | 中国工程物理研究院核物理与化学研究所 | Real-time online gamma and electron absorbed dose rate testing system |
-
2015
- 2015-09-17 CN CN201510592984.1A patent/CN105259565B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202486274U (en) * | 2012-03-13 | 2012-10-10 | 上海理工大学 | Automatic filtering device for ultraviolet detection |
| CN104793228A (en) * | 2015-04-01 | 2015-07-22 | 中国工程物理研究院核物理与化学研究所 | Real-time online gamma and electron absorbed dose rate testing system |
Non-Patent Citations (1)
| Title |
|---|
| 李沫等: "半导体器件辐射电离效应的激光模拟方法", 《太赫兹科学与电子信息学报》 * |
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105891694B (en) * | 2016-05-04 | 2018-12-28 | 中国工程物理研究院电子工程研究所 | The laser analog radiation dose rate effect test method of silicon-based semiconductor transistor |
| CN105891694A (en) * | 2016-05-04 | 2016-08-24 | 中国工程物理研究院电子工程研究所 | Method for testing of laser-simulation radiation dose rate effects of silicon-based semiconductor transistor |
| CN105807305B (en) * | 2016-05-17 | 2018-12-28 | 中国工程物理研究院电子工程研究所 | A kind of double-wavelength pulse laser radiation dose rate effect analog system |
| CN106771952A (en) * | 2017-01-13 | 2017-05-31 | 中国工程物理研究院电子工程研究所 | A kind of wide band gap semiconductor device radiation effect laser simulation system |
| CN107063481A (en) * | 2017-05-10 | 2017-08-18 | 中国工程物理研究院电子工程研究所 | A kind of second order correlation measuring system of wide bandgap semiconductor quantum dot fluorescence |
| CN107886823A (en) * | 2017-11-15 | 2018-04-06 | 中国工程物理研究院电子工程研究所 | One kind optimization integrated form monochromatic light road laser ionization effect analog system |
| CN107907813A (en) * | 2017-11-15 | 2018-04-13 | 中国工程物理研究院电子工程研究所 | A kind of integrated laser ionisation effect simulation system |
| CN107886820A (en) * | 2017-11-15 | 2018-04-06 | 中国工程物理研究院电子工程研究所 | A kind of integrated form double light path laser ionisation effect simulation system |
| CN107833511A (en) * | 2017-11-15 | 2018-03-23 | 中国工程物理研究院电子工程研究所 | One kind optimization integrated form double light path laser ionisation effect simulation system |
| CN107886820B (en) * | 2017-11-15 | 2023-11-24 | 中国工程物理研究院电子工程研究所 | Integrated double-light-path laser ionization effect simulation system |
| CN107833511B (en) * | 2017-11-15 | 2023-11-24 | 中国工程物理研究院电子工程研究所 | Optimization integrated double-light-path laser ionization effect simulation system |
| CN107886823B (en) * | 2017-11-15 | 2024-05-10 | 中国工程物理研究院电子工程研究所 | Optimization integrated single-light-path laser ionization effect simulation system |
| CN111773558A (en) * | 2020-07-01 | 2020-10-16 | 苏州雷泰医疗科技有限公司 | Method and device for using grating to servo dosage rate and radiotherapy equipment |
| CN113030688A (en) * | 2021-03-09 | 2021-06-25 | 中国科学院国家空间科学中心 | Semiconductor device transient dose rate effect laser simulation device and evaluation system |
| CN113030688B (en) * | 2021-03-09 | 2021-10-08 | 中国科学院国家空间科学中心 | Semiconductor device transient dose rate effect laser simulation device and evaluation system |
| CN113101537A (en) * | 2021-05-25 | 2021-07-13 | 美迪信(天津)有限责任公司 | Pulse for treating meibomian gland dysfunction, modulation method and treatment method |
| CN113425252A (en) * | 2021-06-18 | 2021-09-24 | 耀视(苏州)医疗科技有限公司 | Processing method and processing system for uneven shading of eyeball scanning image |
| CN113985240A (en) * | 2021-10-28 | 2022-01-28 | 中国科学院国家空间科学中心 | Method, system and device for measuring transient radiation induced charge of semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105259565B (en) | 2018-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105259565B (en) | A kind of semiconductor devices radiation dose rate effect laser simulation system | |
| CN105807305B (en) | A kind of double-wavelength pulse laser radiation dose rate effect analog system | |
| CN103162941B (en) | A kind of optical thin film and photoelectric device surface laser device for measuring damage threshold | |
| CN208833473U (en) | A kind of multiwavelength laser damage threshold detection device | |
| CN109186958A (en) | A kind of coaxial laser damage threshold test device of more light and implementation method | |
| CN101923000B (en) | Optical measuring device with high reflectivity and high transmissivity | |
| CN106124166B (en) | A kind of measuring device and measurement method of heavy-caliber optical grating diffraction efficiency | |
| CN104458646B (en) | High-speed multi-width terahertz time-domain spectral imager | |
| CN111504612B (en) | Testing arrangement of many light sources laser damage threshold value | |
| TWI634394B (en) | Method and apparatus for generating illuminating radiation | |
| CN109186945A (en) | The measuring device and method of heavy-caliber optical grating diffraction efficiency spectrum and its uniformity | |
| CN103018011A (en) | System and method for measuring transmittance of optical variable attenuator | |
| CN104101486A (en) | Double-beam delayed laser damage testing system | |
| CN108519218A (en) | Optical element multiwavelength laser damage measure and analysis system | |
| CN112595493B (en) | Laser damage threshold and nonlinear absorption co-target surface measuring device and method | |
| CN110823388A (en) | Film thermal response single-pulse detection method under ultrafast laser photon time stretching | |
| CN102385039B (en) | Test method and device for high-light intensity and large-scale solar cell illumination linearity | |
| CN102495355B (en) | Laser pulse single event effect simulation system | |
| CN103317228A (en) | Simultaneous monitoring device for femtosecond laser micromachining | |
| CN106771952B (en) | Radiation effect laser simulation system of wide forbidden band semiconductor device | |
| CN102841097B (en) | High-accuracy resetting technology-based damage threshold measuring method and device | |
| CN108051182B (en) | Laser subsystem comprehensive test equipment | |
| CN208208156U (en) | A kind of optimization integrated form monochromatic light road laser ionization effect analog system | |
| CN107907813B (en) | Integrated laser ionization effect simulation system | |
| CN219694503U (en) | Device for measuring radial misalignment distance of light beams in double-beam optical trap |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180126 Termination date: 20200917 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |