CN105226154A - A kind of LED chip structure and manufacture method - Google Patents
A kind of LED chip structure and manufacture method Download PDFInfo
- Publication number
- CN105226154A CN105226154A CN201510710379.XA CN201510710379A CN105226154A CN 105226154 A CN105226154 A CN 105226154A CN 201510710379 A CN201510710379 A CN 201510710379A CN 105226154 A CN105226154 A CN 105226154A
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- semiconductor layer
- groove structure
- metal
- led chip
- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
Abstract
The invention provides a kind of LED chip structure and manufacture method, in described chip, the groove structure that one or more regionality removes is respectively equipped with in the below of Pad and/or finger, described groove structure extend to upwards cross over the second semiconductor layer and mqw layer bottom the second semiconductor layer after always the first semiconductor layer by layer in, the side in described groove structure and/or groove bottom are provided with insulating barrier.The invention on the one hand reducing portion can divide the recombination luminescence of carrier side under the electrodes, can prevent from the other hand drawing splitting or in cutting process, accessory substance sputters the chip short circuit and/or extinction that cause.
Description
Technical field
The invention belongs to semiconductor optoelectronic component structural design and manufacturing technology field, is specifically related to a kind of structure and manufacture method of light-emitting diode chip for backlight unit of high brightness.
Background technology
Light-emitting diode (Light-EmittingDiode is called for short LED) is a kind of can be the semiconductor electronic component of luminous energy by electric energy conversion, and wherein, LED chip is the core component of light-emitting diode.LED chip have two chief components, one is P type semiconductor, occupies an leading position in hole, and two is N type semiconductors, and electronics is occupied an leading position.Time these two kinds of semiconductors couple together, form a P-N junction between them, when forward current acts on LED chip by wire, electrons is pushed to P district, in P district, electronics is with hole-recombination, sends energy, the principle of LED luminescence that Here it is with the form of photon.
In existing LED chip technology, having current path and bright dipping, namely avoiding light in shading place crested and absorption to stop below contact electrode, the common practice is that side adds insulating barrier (as SiO under the electrodes
2) or form Schottky contacts (Schottkycontact), but this method still has small part carrier can square recombination luminescence under the electrodes, namely wastes the input carrier of this part.
In addition; to carry out drawing in the process splitting (laserdicing) or cutting to LED chip in traditional handicraft; directly cut through metal covering (Al; Au; Ag etc.) or extinction material (Si, GaAs substrate etc.), make the accessory substance (bi-product) having conductivity and/or inhale optical activity easily spatter attached down of even inlaying to the front of chip and/or sidewall; deposit in case at the protective layer without absolute intensity and thickness, chip short circuit even " extinction " will be made.Should " extinction " be that reflectivity is extremely low, causes out light energy to be absorbed because-product surface is in burned black shape, and then the phenomenon of loss light efficiency.
Summary of the invention
The invention is for solving the problems of the prior art, provide a kind of LED chip structure and manufacture method, on the one hand reducing portion can divide the recombination luminescence of carrier side under the electrodes, can prevent from the other hand drawing and to split or in cutting process, accessory substance sputters the chip short circuit and/or extinction that cause.
The LED chip that the invention provides has following structure, in described chip, the groove structure that one or more regionality removes is respectively equipped with in the below of pad (Pad) and/or contact (finger), described groove structure extend to upwards cross over the second semiconductor layer and Multiple Quantum Well (MQW) layer bottom the second semiconductor layer after always the first semiconductor layer by layer in, the side in described groove structure and/or groove bottom are provided with insulating barrier.
Preferably, the below of described Pad and/or finger is respectively equipped with a groove structure, and the groove bottom area of described groove structure is equal to or greater than the area of plane shared by Pad and/or finger corresponding with on its vertical position.
Wherein, the cross section of described groove structure can be rectangle, and preferably in up-narrow and down-wide isosceles trapezoid, the angle of described trapezoidal interior acute angle is preferably greater than 45 °.
Further; in side in described groove structure and/or groove bottom; what have insulating barrier is then also provided with the coat of metal be connected with metal level adjacent below described second semiconductor layer on described insulating barrier; cohesive position from described coat of metal two ends forms a hollow space to groove structure inside; below described hollow space be with described metal level below the functional layer that arranges of adjacent routine; as adhesive linkage, described adhesive linkage is preferably metal adhesion layer.
Further, described functional layer directly or connect by other conventional structure function interlayers arranged some and be connected with substrate (Substrate).
As preferred scheme, described metal level and coat of metal are obtained by same material; Described metal level or coat of metal can be metal mirror layer, also can be metal adhesion layer.
As preferred scheme, described functional layer and described metal level are obtained by same material.
As preferred scheme, when LED chip adopts LED structure (Horizontal-typen-sideupLEDstructure) on side, horizontal n pole, can fill adhesives in described hollow space, this adhesives preferably can connect with the adhesive linkage one as functional layer and composition material is identical.
Wherein, described first semiconductor layer and the second semiconductor layer are one of n-type semiconductor layer and p-type semiconductor layer independently of one another, and are n-type semiconductor layer or p-type semiconductor layer when the two is different.The material forming the first semiconductor layer and the second semiconductor layer can be conventional semi-conducting material, includes but not limited to the quaternary semiconductor materials such as InGaN ternary or GaAsInP.
Wherein, the thickness of described groove structure inner insulating layer is 0.1-1 μm, is preferably 0.1 μm or its multiple; The material of insulating barrier can be SiOx, SiNx, TiO
2, AlxOy, MgF
2deng high penetration fluorine/nitrogen/oxide, preferably have low-refraction and material of high thermal conductivity MgF concurrently
2.
Wherein, in described groove structure, the thickness of coat of metal is 0.2-1 μm, is preferably 0.5 μm; The material of coat of metal can be the metal or alloy for LED light source tool high reflectance characteristic such as Ag, Al, Au, is preferably metal A g.
In order to the object of cutting, on epitaxial wafer in LED chip manufacturing process, below epitaxial wafer Cutting Road, prolong on Cutting Road direction, can independent of above-mentioned LED chip structure or with above-mentioned LED chip structure and deposit ground, the groove structure that a regionality removes is set, described groove structure extend to upwards cross over the second semiconductor layer and Multiple Quantum Well (MQW) layer bottom the second semiconductor layer after always the first semiconductor layer by layer in, the side in described groove structure and/or groove bottom are provided with insulating barrier.
Wherein, the cross section of described groove structure can be rectangle, and preferably arbitrary groove structure also can in up-narrow and down-wide isosceles trapezoid, and the angle of described trapezoidal interior acute angle is preferably greater than 45 °.
Further; in side in described groove structure and/or groove bottom; what have insulating barrier is then also provided with the coat of metal be connected with metal level adjacent below described second semiconductor layer on described insulating barrier; cohesive position from described coat of metal two ends forms a hollow space to groove structure inside; below described hollow space be with described metal level below the functional layer that arranges of adjacent routine; as adhesive linkage, described adhesive linkage is preferably metal adhesion layer.
Further, described functional layer directly or connect by other conventional structure function interlayers arranged some and be connected with substrate (Substrate).
As preferred scheme, described metal level and coat of metal are obtained by same material; Described metal level or coat of metal can be metal mirror layer, also can be metal adhesion layer.
As preferred scheme, described functional layer and described metal level are obtained by same material.
As preferred scheme, when LED chip adopts LED structure (Horizontal-typen-sideupLEDstructure) on side, horizontal n pole, can fill adhesives in described hollow space, this adhesives preferably can connect with the adhesive linkage one as functional layer and composition material is identical.
Wherein, described first semiconductor layer and the second semiconductor layer are one of n-type semiconductor layer and p-type semiconductor layer independently of one another, and are n-type semiconductor layer or p-type semiconductor layer when the two is different.The material forming the first semiconductor layer and the second semiconductor layer can be conventional semi-conducting material, includes but not limited to the quaternary semiconductor materials such as InGaN ternary or GaAsInP.
Wherein, the thickness of described groove structure inner insulating layer is 0.1-1 μm, is preferably 0.1 μm or its multiple; The material of insulating barrier can be SiOx, SiNx, TiO
2, AlxOy, MgF
2deng high penetration fluorine/nitrogen/oxide, preferably have low-refraction and material of high thermal conductivity MgF concurrently
2.
Wherein, in described groove structure, the thickness of coat of metal is 0.2-1 μm, is preferably 0.5 μm; The material of coat of metal can be the metal or alloy for LED light source tool high reflectance characteristic such as Ag, Al, Au, is preferably metal A g.
A kind of manufacture method of the invention LED chip comprises the steps: that (1) obtains the first semiconductor layer, mqw layer and the second semiconductor layer on the first substrate successively by conventional method; (2) in position define groove structure figure, and inwardly etch from the second semiconductor layer outer surface according to the graphic structure of definition, form groove structure; (3) on the groove structure medial surface etched and/or groove bottom, insulating barrier is plated by conventional method; (4) face being coated with or not being coated with insulating barrier by conventional method in the second semiconductor layer outer surface and groove structure plates metal level or coat of metal continuously; (5) one side being coated with metal level or coat of metal is combined by functional layer with the second substrate; (6) remove the first substrate and carry out comprising according to conventional method subsequent steps such as making contact electrode, alligatoring, cutting.
The groove structure of the invention on the one hand by removing in setting area, the below property of Pad and/or finger, and insulating barrier and coat of metal are set further, there is the effect guiding electric current and Omni-directional reflector (ODR), current path can walk around electrode shading place, light is avoided to be covered and absorption by electrode, allow input carrier can meet bright dipping at active position, increase luminous and get optical efficiency; In addition, in order to the vibrational power flow that groove structure is trapezoidal, more the light of MQW bright dipping down can be derived semiconductor structure.On the other hand, the groove structure that setting area property removes below Cutting Road, making to draw the first contact-making surface splitting or cut is semi-conducting material, decrease conductivity because the first contact-making surface causes for metal and/or the bi-product of optical activity and the splash of chip are revolved in suction, and then avoid the reduction of front or sidewall bright dipping and the Ir yield caused thus.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of execution mode of the invention LED chip structure;
Fig. 2 is the structural representation containing a kind of execution mode of Cutting Road before the cutting of the invention LED chip;
Fig. 3-5 is structural representations of the second-four kinds execution modes of the invention LED chip structure;
Fig. 6 is the invention LED chip structure manufacture process schematic diagram.
Wherein, 1-Pad; 2-finger; 3-groove structure; 4-insulating barrier; 5-coat of metal; 6-first semiconductor layer; 7-MQW layer; 8-second semiconductor layer; 9-metal level; 10-functional layer; 11-first substrate; 12-second substrate; 13-Cutting Road; 14-hollow space.
Embodiment
Below by being further described the invention by reference to the accompanying drawings.
As the structural representation that Fig. 1 is a kind of preferred implementation of the invention LED chip structure, it can be cut into by the epitaxial wafer of the Cutting Road structure had as shown in Figure 2, comparatively concrete a kind of manufacture process schematic diagram (eliminates Cutting Road part, can know the forming process of Cutting Road part according to content disclosed in the invention by inference) as shown in Figure 6 in figure.Below LED chip structure as shown in Figure 1 and manufacture method thereof are described further.
First, as Fig. 6 (A), on the first substrate 11, the first semiconductor layer 6, mqw layer 7 and the second semiconductor layer 8 is obtained successively by conventional method, as the example of indefiniteness, described first substrate 11 can be GaAs substrate, and described first semiconductor layer 6 and the second semiconductor layer 8 are respectively n-type semiconductor layer and p-type semiconductor layer.Utilize yellow light lithography in position, as below Pad and/or finger and below epitaxial wafer Cutting Road, prolong on Cutting Road direction, the figure of definition groove structure 3, and inwardly etch from the second semiconductor layer 8 outer surface according to the graphic structure of definition, form groove structure 3, as Fig. 6 (B), groove structure 3 is rectangle in detail in this figure, part recess structure 3 also can be that wherein the sharp angle of isosceles trapezoid is preferably greater than 45 ° as the isosceles trapezoid below Pad1 in Fig. 3.On groove structure 3 medial surface etched and/or groove bottom, plate insulating barrier 4 by conventional method, as Fig. 6 (C), adopt in this example in preferred medial surface and groove bottom and all plate insulating barrier 4; In the example of indefiniteness, the thickness of insulating barrier is 0.1-1 μm, and be preferably 0.1 μm or its multiple, the material of insulating barrier can be SiOx, SiNx, TiO
2, AlxOy, MgF
2deng high penetration fluorine/nitrogen/oxide, preferably have low-refraction and material of high thermal conductivity MgF concurrently
2.The face being coated with or not being coated with insulating barrier 4 by conventional method in the second semiconductor layer 8 outer surface and groove structure 3 plates metal level 9 or coat of metal 5 continuously; Be easy to prepare in this example, as Fig. 6 (D), same material can be adopted to form metal level 9 and coat of metal 5 simultaneously, namely the two is formed simultaneously or obtains in same preparation process; In the example of indefiniteness, the thickness of coat of metal 5 or metal level 9 is 0.2-1 μm, and be preferably 0.5 μm, material can be the metal or alloy for LED light source tool high reflectance characteristic such as Ag, Al, Au, is preferably metal A g.The one side being coated with metal level 9 or coat of metal 5 is combined by functional layer 10 with the second substrate 12; as Fig. 6 (E); now form a hollow space 14 from the cohesive position of described coat of metal 5 two ends and metal level 9 to groove structure 3 inside; below described hollow space 14 be with described metal level 9 below adjacent functional layer 10; in the example of indefiniteness; second substrate 12 can be Sapphire Substrate; functional layer 10 can be metal adhesion layer, also can set up other structure function layers further between functional layer 10 and the second substrate 12.Remove the first substrate 11, as Fig. 6 (F), carry out comprising according to conventional method subsequent steps such as making contact electrode, alligatoring, cutting, LED chip structure as shown in Figure 1 can be obtained, wherein, cutting process carries out along the Cutting Road 13 with groove structure 3, as shown in Figure 2.
Wherein, the groove structure of the invention also uses the making of other structure type LED chips simultaneously, as the making of the LED chip of LED structure (Horizontal-typen-sideupLEDstructure) on side, horizontal n pole, as shown in Figure 4, its structure and manufacturing process similar, repeat no more.As another embodiment, for the LED chip of this Horizontal-typen-sideupLEDstructure, also hollow space 14 can be made in manufacturing process to fill adhesives, preferred adhesives is the material identical with functional layer 10, then adopts the LED chip structure using the same method and obtain as shown in Figure 5; Or, before being combined with the second substrate 12, directly in the filling that metal level 9 and coat of metal 5 adopt same material to make functional layer 10 and carry out in hollow space 14 simultaneously, and then can be combined with the second substrate 12.
The foregoing is only the preferred embodiment of the invention; not in order to limit the invention; within all spirit in the invention and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the invention.
Claims (10)
1. a LED chip structure, in described chip, the groove structure that one or more regionality removes is respectively equipped with in the below of Pad and/or finger, described groove structure extend to upwards cross over the second semiconductor layer and mqw layer bottom the second semiconductor layer after always the first semiconductor layer by layer in, the side in described groove structure and/or groove bottom are provided with insulating barrier.
2. a kind of LED chip structure according to claim 1, is characterized in that, the cross section of described groove structure can be rectangle or isosceles trapezoid.
3. a kind of LED chip structure according to claim 1; it is characterized in that; in side in described groove structure and/or groove bottom; what have insulating barrier is then also provided with the coat of metal be connected with metal level adjacent below described second semiconductor layer on described insulating barrier; cohesive position from described coat of metal two ends forms a hollow space to groove structure inside, below described hollow space be with described metal level below the functional layer that arranges of routine that adjoins.
4. a kind of LED chip structure according to claim 3, is characterized in that, described metal level and coat of metal are obtained by same material.
5. a kind of LED chip structure according to claim 3, is characterized in that, when LED chip adopts LED structure on side, horizontal n pole, can fill adhesives in described hollow space.
6. a LED, in described epitaxial wafer, below epitaxial wafer Cutting Road, prolong on Cutting Road direction, be provided with the groove structure that a regionality removes, described groove structure extend to upwards cross over the second semiconductor layer and mqw layer bottom the second semiconductor layer after always the first semiconductor layer by layer in, the side in described groove structure and/or groove bottom are provided with insulating barrier.
7. a kind of LED according to claim 6, is characterized in that, the cross section of described groove structure can be rectangle or isosceles trapezoid.
8. a kind of LED according to claim 6; it is characterized in that; in side in described groove structure and/or groove bottom; what have insulating barrier is then also provided with the coat of metal be connected with metal level adjacent below described second semiconductor layer on described insulating barrier; cohesive position from described coat of metal two ends forms a hollow space to groove structure inside, below described hollow space be with described metal level below the functional layer that arranges of routine that adjoins.
9. a kind of LED according to claim 8, is characterized in that, described metal level and coat of metal are obtained by same material.
10. a kind of LED according to claim 8, is characterized in that, when LED chip adopts LED structure on side, horizontal n pole, can fill adhesives in described hollow space.
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|---|---|---|---|
| CN201510710379.XA CN105226154B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip structure and manufacturing method |
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|---|---|---|---|
| CN201510710379.XA CN105226154B (en) | 2015-10-27 | 2015-10-27 | A kind of LED chip structure and manufacturing method |
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| CN105226154B CN105226154B (en) | 2019-03-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114639763A (en) * | 2022-05-12 | 2022-06-17 | 南昌凯捷半导体科技有限公司 | Reverse-polarity infrared LED with embedded electrode and preparation method thereof |
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