CN105226132A - 一种太阳能彩虹片返工工艺 - Google Patents
一种太阳能彩虹片返工工艺 Download PDFInfo
- Publication number
- CN105226132A CN105226132A CN201510619515.4A CN201510619515A CN105226132A CN 105226132 A CN105226132 A CN 105226132A CN 201510619515 A CN201510619515 A CN 201510619515A CN 105226132 A CN105226132 A CN 105226132A
- Authority
- CN
- China
- Prior art keywords
- over again
- done over
- rainbow plate
- rainbow
- minute
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 38
- 230000008569 process Effects 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010703 silicon Substances 0.000 claims abstract description 15
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 10
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000002791 soaking Methods 0.000 claims abstract description 5
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 5
- 238000005530 etching Methods 0.000 claims abstract description 4
- 235000012431 wafers Nutrition 0.000 claims abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 8
- 239000012528 membrane Substances 0.000 abstract description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 3
- 230000007797 corrosion Effects 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 7
- 230000002950 deficient Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000013467 fragmentation Methods 0.000 description 1
- 238000006062 fragmentation reaction Methods 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
本发明设计太阳能电池生产领域，具体是镀减反射膜工艺段（PECVD）彩虹片返工工艺。一种太阳能彩虹片返工工艺，在太阳能硅片生产中，对PECVD工艺段生产过程中会产生的彩虹片进行返工操作，顺序在质量百分比浓度为23-45%碳酸钠浸泡1-3分钟，用高压脉冲电场处理，在质量百分比浓度为8-15%的氢氟酸中浸泡3-5分钟，再进行常规PSG清洗和制绒工艺。本发明不会对硅片表面造成大的腐蚀同时有效清除了氮化硅膜。
Description
技术领域
本发明设计太阳能电池生产领域，具体是镀减反射膜工艺段（PECVD）彩虹片返工工艺。
背景技术
电池片的生产需经过一个镀减反射膜工艺段（PECVD）。本工艺是利用辉光放电的物理作用来激活粒子的一种化学气相反应，可在相对较低的温度下发生反应，在硅片表面沉积氮化硅薄膜。氮化硅薄膜具有减反射和钝化作用，提高了电池片开路电压和短路电流，进而提高了电池片转化效率。
PECVD工艺段生产过程中会产生大量不合格片，约占产线的2%。其中大部分不合格片如色差片等可以经清洗去膜后返工，进而提高了产线的合格率。其中因为破片等原因造成的彩虹片，其比例约占产线的0.15%。现有的清洗工艺很难将彩虹片表面的氮化硅膜去除干净，并且使用高浓度的酸很容易把硅片本身破坏，只能作为不可返工片处理。
发明内容
本发明所要解决的技术问题是：如何使彩虹片表面的氮化硅膜去除干净，同时不破坏太阳能电池硅片。
本发明所采用的技术方案是：一种太阳能彩虹片返工工艺，其特征在于：在太阳能硅片生产中，对PECVD工艺段生产过程中会产生的彩虹片进行返工操作，顺序在质量百分比浓度为23-45%碳酸钠浸泡1-3分钟，用高压脉冲电场处理，在质量百分比浓度为8-15%的氢氟酸中浸泡3-5分钟，再进行常规PSG清洗和制绒工艺。
作为一种优选方式：高压脉冲电场处理的参数为：脉冲强度1000V/cm-1400V/cm，脉冲宽度60μs-120μs，脉冲个数20个-50个，脉冲间隔500ms-600ms。
本发明的有益效果是：本发明通过质量百分比浓度为23-45%碳酸钠浸泡1-3分钟在氮化硅膜上形成一个碱性层，再通过高压脉冲电场处理把氮化硅膜从硅片上剥离，然后通过浓度为8-15%的氢氟酸对硅片表面进行清洗，不会对硅片表面造成大的腐蚀同时有效清除了氮化硅膜。
具体实施方式
现有常用返工作业流程是：PSG清洗-清洗制绒-扩散-湿法切边-镀膜-丝网印刷，本发明的改进是在现有工艺的基础上增加前置处理工艺。
在太阳能硅片生产中，对PECVD工艺段生产过程中会产生的彩虹片进行返工操作，顺序在质量百分比浓度为23-45%碳酸钠浸泡1-3分钟，再用高压脉冲电场处理，高压脉冲电场处理，一方面有利于氮化硅膜和硅片的分离，另一方面在硅片表面形成一个离子膜，放置以后的处理过程中硅表面被腐蚀，高压脉冲电场处理在质量百分比浓度为8-15%的氢氟酸中浸泡3-5分钟，再进行常规PSG清洗和制绒工艺。高压脉冲电场处理的参数为：脉冲强度1000V/cm-1400V/cm，脉冲宽度60μs-120μs，脉冲个数20个-50个，脉冲间隔500ms-600ms。
通过本发明95%的彩虹片表面SiNx可以得到完全去除，剩余的片子表面局部不能去除，但是在经过返工工艺后可以满足B片标准，实现了回收。
Claims (2)
1.一种太阳能彩虹片返工工艺，其特征在于：在太阳能硅片生产中，对PECVD工艺段生产过程中会产生的彩虹片进行返工操作，顺序在质量百分比浓度为23-45%碳酸钠浸泡1-3分钟，用高压脉冲电场处理，在质量百分比浓度为8-15%的氢氟酸中浸泡3-5分钟，再进行常规PSG清洗和制绒工艺。
2.根据权利要求1所述的一种太阳能彩虹片返工工艺，其特征在于：高压脉冲电场处理的参数为：脉冲强度1000V/cm-1400V/cm，脉冲宽度60μs-120μs，脉冲个数20个-50个，脉冲间隔500ms-600ms。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510619515.4A CN105226132B (zh) | 2015-09-25 | 2015-09-25 | 一种太阳能彩虹片返工工艺 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510619515.4A CN105226132B (zh) | 2015-09-25 | 2015-09-25 | 一种太阳能彩虹片返工工艺 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN105226132A true CN105226132A (zh) | 2016-01-06 |
| CN105226132B CN105226132B (zh) | 2017-01-11 |
Family
ID=54994966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510619515.4A Expired - Fee Related CN105226132B (zh) | 2015-09-25 | 2015-09-25 | 一种太阳能彩虹片返工工艺 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105226132B (zh) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091728A (zh) * | 2017-12-21 | 2018-05-29 | 天津市职业大学 | 一种太阳电池玻璃失效减反射膜的重涂修复和增效方法 |
| CN108110064A (zh) * | 2017-12-21 | 2018-06-01 | 天津市职业大学 | 一种太阳电池玻璃低效减反射膜的增效方法 |
| CN108538966A (zh) * | 2018-04-18 | 2018-09-14 | 晋能光伏技术有限责任公司 | 一种高效异质结电池cvd后制程不良返工工艺方法 |
| CN109216503A (zh) * | 2018-08-11 | 2019-01-15 | 山西潞安太阳能科技有限责任公司 | 一种新的多晶镀膜异常片返工的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101217169A (zh) * | 2007-12-27 | 2008-07-09 | 江阴浚鑫科技有限公司 | 一种晶体硅太阳能电池片印刷后次品返工方法 |
| CN102185015A (zh) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | 硅片的返工处理方法 |
-
2015
- 2015-09-25 CN CN201510619515.4A patent/CN105226132B/zh not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101217169A (zh) * | 2007-12-27 | 2008-07-09 | 江阴浚鑫科技有限公司 | 一种晶体硅太阳能电池片印刷后次品返工方法 |
| CN102185015A (zh) * | 2010-12-02 | 2011-09-14 | 江阴浚鑫科技有限公司 | 硅片的返工处理方法 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108091728A (zh) * | 2017-12-21 | 2018-05-29 | 天津市职业大学 | 一种太阳电池玻璃失效减反射膜的重涂修复和增效方法 |
| CN108110064A (zh) * | 2017-12-21 | 2018-06-01 | 天津市职业大学 | 一种太阳电池玻璃低效减反射膜的增效方法 |
| CN108110064B (zh) * | 2017-12-21 | 2019-11-08 | 天津市职业大学 | 一种太阳电池玻璃低效减反射膜的增效方法 |
| CN108538966A (zh) * | 2018-04-18 | 2018-09-14 | 晋能光伏技术有限责任公司 | 一种高效异质结电池cvd后制程不良返工工艺方法 |
| CN108538966B (zh) * | 2018-04-18 | 2023-11-03 | 晋能光伏技术有限责任公司 | 一种高效异质结电池cvd后制程不良返工工艺方法 |
| CN109216503A (zh) * | 2018-08-11 | 2019-01-15 | 山西潞安太阳能科技有限责任公司 | 一种新的多晶镀膜异常片返工的方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105226132B (zh) | 2017-01-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102185035B (zh) | 一种二次制绒法制备晶体硅太阳能电池的工艺 | |
| CN102751377B (zh) | 一种用于高效晶硅太阳电池制作的表面湿法处理工艺 | |
| TWI669830B (zh) | 一種局部背接觸太陽能電池的製造方法 | |
| CN108054224B (zh) | 一种晶体硅太阳能电池的绒面结构及其制备方法 | |
| CN101853899B (zh) | 一种利用局域背场制备太阳能电池的方法 | |
| CN110416359A (zh) | 一种TOPCon结构电池的制备方法 | |
| CN102593268B (zh) | 采用绒面光滑圆整技术的异质结太阳电池清洗制绒方法 | |
| CN105226132A (zh) | 一种太阳能彩虹片返工工艺 | |
| CN102064232A (zh) | 一种应用于晶体硅太阳电池的单面腐蚀p-n结或绒面结构的工艺 | |
| CN104362221A (zh) | 一种rie制绒的多晶硅太阳电池的制备方法 | |
| CN102737981A (zh) | 一种实现硅片单面抛光的方法 | |
| CN102768951A (zh) | 金属铜离子辅助刻蚀制备黑硅的方法 | |
| CN101777605A (zh) | 一种晶体硅太阳能电池边缘刻蚀工艺 | |
| CN116936687B (zh) | 联合钝化背接触电池及去除侧蚀残留掩膜层的后制绒方法 | |
| CN104218122A (zh) | 一种降低金刚线切割的多晶硅反射率的制绒方法 | |
| CN104009125A (zh) | 多晶硅片的制绒工艺 | |
| CN103981575A (zh) | 一种单晶硅片的退火制绒方法 | |
| CN102800740A (zh) | 背接触晶体硅太阳能电池片制造方法 | |
| CN102593241A (zh) | 晶硅太阳能电池及晶硅太阳能电池边缘刻蚀的方法 | |
| CN104716206B (zh) | 一种提高镀减反射膜后电池片返工品转换效率的方法 | |
| CN103531667A (zh) | 一种不合格太阳能电池片处理方法 | |
| CN103258914A (zh) | Mwt太阳能电池及其制备方法 | |
| CN102593257A (zh) | 双面发电mwt太阳能电池的制备方法 | |
| CN104201244A (zh) | 一种晶体硅太阳能电池片丝网印刷后次品返工方法 | |
| CN102800741A (zh) | 背接触晶体硅太阳能电池片制造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170111 |