CN105210186A - 半导体开关器件的间隔器系统 - Google Patents
半导体开关器件的间隔器系统 Download PDFInfo
- Publication number
- CN105210186A CN105210186A CN201480027407.1A CN201480027407A CN105210186A CN 105210186 A CN105210186 A CN 105210186A CN 201480027407 A CN201480027407 A CN 201480027407A CN 105210186 A CN105210186 A CN 105210186A
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- semiconductor switch
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- 125000006850 spacer group Chemical group 0.000 title claims abstract description 54
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000009413 insulation Methods 0.000 claims description 40
- 229910010293 ceramic material Inorganic materials 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000010445 mica Substances 0.000 claims description 3
- 229910052618 mica group Inorganic materials 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 3
- 239000011810 insulating material Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/90—Methods for connecting semiconductor or solid state bodies using means for bonding not being attached to, or not being formed on, the body surface to be connected, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/1302—GTO - Gate Turn-Off thyristor
- H01L2924/13022—MA-GTO - Modified Anode Gate Turn-Off thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
Abstract
Description
1 | 间隔器系统 | 2 | 开关器件 |
3 | 绝缘元件 | 4 | 支承元件 |
5 | 栅极连接器元件 | 6 | 弹簧系统 |
7 | 间隔环 | 9 | 对准元件 |
10 | 支承元件 | 11 | 栅环 |
12 | 对准元件 | 13 | 阴极应变缓冲板 |
14 | 阳极应变缓冲板 | 21 | 衬底 |
22 | 阴极极片 | 23 | 阳极极片 |
24 | 外壳隔离管 | 25 | 阴极连接器元件 |
26 | 爬电段 | 27 | 对准环 |
28 | 阳极凸缘 |
Claims (14)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP13167468 | 2013-05-13 | ||
EP13167468.1 | 2013-05-13 | ||
PCT/EP2014/059256 WO2014184061A1 (en) | 2013-05-13 | 2014-05-06 | Spacer system for a semiconductor switching device |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105210186A true CN105210186A (zh) | 2015-12-30 |
CN105210186B CN105210186B (zh) | 2018-01-12 |
Family
ID=48428366
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201480027407.1A Active CN105210186B (zh) | 2013-05-13 | 2014-05-06 | 半导体开关器件的间隔器系统 |
Country Status (6)
Country | Link |
---|---|
US (1) | US9698067B2 (zh) |
JP (1) | JP6474790B2 (zh) |
CN (1) | CN105210186B (zh) |
DE (1) | DE112014002388B4 (zh) |
GB (1) | GB2529338B (zh) |
WO (1) | WO2014184061A1 (zh) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110383463A (zh) * | 2017-01-17 | 2019-10-25 | Abb瑞士股份有限公司 | 半导体开关器件 |
CN111933588A (zh) * | 2020-06-24 | 2020-11-13 | 株洲中车时代半导体有限公司 | 一种igct封装结构 |
CN112490724A (zh) * | 2020-11-27 | 2021-03-12 | 株洲中车时代半导体有限公司 | 一种碟簧组件及功率半导体模块 |
CN115621233A (zh) * | 2022-12-01 | 2023-01-17 | 清华大学 | 一种用于全控型电力电子器件的管壳 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6427693B2 (ja) | 2015-05-19 | 2018-11-21 | アーベーベー・シュバイツ・アーゲー | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0687014A2 (en) * | 1994-04-12 | 1995-12-13 | Mitsubishi Denki Kabushiki Kaisha | Pressure contact type semiconductor device, preferably of the light triggered type |
CN1136221A (zh) * | 1995-02-17 | 1996-11-20 | Abb管理有限公司 | 半导体器件压触管壳 |
EP0746021A2 (en) * | 1995-05-31 | 1996-12-04 | Mitsubishi Denki Kabushiki Kaisha | Compression bonded type semiconductor element and manufacturing method for the same |
CN1362738A (zh) * | 2000-12-28 | 2002-08-07 | 塞米克朗电子有限公司 | 功率半导体模块 |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE620870A (zh) * | 1961-08-04 | 1900-01-01 | ||
DE2039806C3 (de) * | 1970-08-11 | 1975-05-07 | Brown, Boveri & Cie Ag, 6800 Mannheim | Halbleiterbauelement mit Druckkontakten |
US3872630A (en) | 1972-12-26 | 1975-03-25 | Frank F Ali | Sanding and buffing wheel |
CH628461A5 (en) | 1979-02-26 | 1982-02-26 | Alsthom Atlantique | Support-package for a power semiconductor wafer for immersion in a fluorinated hydrocarbon |
JPS63124535A (ja) | 1986-11-14 | 1988-05-28 | Mitsubishi Electric Corp | 半導体装置 |
US5371386A (en) | 1992-04-28 | 1994-12-06 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of assembling the same |
JP3989583B2 (ja) | 1997-03-24 | 2007-10-10 | 三菱電機株式会社 | 圧接型半導体装置 |
US5986928A (en) | 1997-09-05 | 1999-11-16 | Information Storage Devices, Inc. | Method and apparatus for detecting the end of message recorded onto an array of memory elements |
JP3480901B2 (ja) | 1998-06-18 | 2003-12-22 | 株式会社東芝 | 圧接形半導体素子および電力変換装置 |
EP1030355B1 (en) * | 1998-09-10 | 2007-12-19 | Mitsubishi Denki Kabushiki Kaisha | Press contact semiconductor device |
JP4137309B2 (ja) * | 1999-09-06 | 2008-08-20 | 三菱電機株式会社 | ゲート転流型半導体装置 |
US6445013B1 (en) | 2000-04-13 | 2002-09-03 | Mitsubishi Denki Kabushiki Kaisha | Gate commutated turn-off semiconductor device |
JP2002299354A (ja) | 2001-03-30 | 2002-10-11 | Ngk Insulators Ltd | パワー半導体装置 |
EP2071621A1 (en) * | 2007-12-11 | 2009-06-17 | ABB Research Ltd. | Semiconductor switching device with gate connection |
WO2013038493A1 (ja) * | 2011-09-13 | 2013-03-21 | トヨタ自動車株式会社 | 半導体モジュール |
DE112011105738B4 (de) * | 2011-10-13 | 2014-12-31 | Toyota Jidosha Kabushiki Kaisha | Halbleitermodul |
JP2016062983A (ja) * | 2014-09-16 | 2016-04-25 | 株式会社東芝 | 半導体装置 |
-
2014
- 2014-05-06 GB GB1520088.4A patent/GB2529338B/en active Active
- 2014-05-06 WO PCT/EP2014/059256 patent/WO2014184061A1/en active Application Filing
- 2014-05-06 CN CN201480027407.1A patent/CN105210186B/zh active Active
- 2014-05-06 JP JP2016513287A patent/JP6474790B2/ja active Active
- 2014-05-06 DE DE112014002388.4T patent/DE112014002388B4/de active Active
-
2015
- 2015-11-13 US US14/940,635 patent/US9698067B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0687014A2 (en) * | 1994-04-12 | 1995-12-13 | Mitsubishi Denki Kabushiki Kaisha | Pressure contact type semiconductor device, preferably of the light triggered type |
CN1136221A (zh) * | 1995-02-17 | 1996-11-20 | Abb管理有限公司 | 半导体器件压触管壳 |
EP0746021A2 (en) * | 1995-05-31 | 1996-12-04 | Mitsubishi Denki Kabushiki Kaisha | Compression bonded type semiconductor element and manufacturing method for the same |
CN1362738A (zh) * | 2000-12-28 | 2002-08-07 | 塞米克朗电子有限公司 | 功率半导体模块 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110383463A (zh) * | 2017-01-17 | 2019-10-25 | Abb瑞士股份有限公司 | 半导体开关器件 |
CN110383463B (zh) * | 2017-01-17 | 2023-05-02 | 日立能源瑞士股份公司 | 半导体开关器件 |
CN111933588A (zh) * | 2020-06-24 | 2020-11-13 | 株洲中车时代半导体有限公司 | 一种igct封装结构 |
CN111933588B (zh) * | 2020-06-24 | 2022-04-29 | 株洲中车时代半导体有限公司 | 一种igct封装结构 |
CN112490724A (zh) * | 2020-11-27 | 2021-03-12 | 株洲中车时代半导体有限公司 | 一种碟簧组件及功率半导体模块 |
CN115621233A (zh) * | 2022-12-01 | 2023-01-17 | 清华大学 | 一种用于全控型电力电子器件的管壳 |
Also Published As
Publication number | Publication date |
---|---|
DE112014002388B4 (de) | 2022-05-05 |
US20160071815A1 (en) | 2016-03-10 |
GB2529338B (en) | 2019-03-20 |
JP2016521462A (ja) | 2016-07-21 |
WO2014184061A1 (en) | 2014-11-20 |
JP6474790B2 (ja) | 2019-02-27 |
DE112014002388T5 (de) | 2016-01-28 |
CN105210186B (zh) | 2018-01-12 |
GB2529338A (en) | 2016-02-17 |
US9698067B2 (en) | 2017-07-04 |
GB201520088D0 (en) | 2015-12-30 |
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Effective date of registration: 20180510 Address after: Baden, Switzerland Patentee after: ABB Switzerland Co.,Ltd. Address before: Zurich Patentee before: ABB TECHNOLOGY Ltd. |
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Address after: Swiss Baden Patentee after: Hitachi energy Switzerland AG Address before: Swiss Baden Patentee before: ABB grid Switzerland AG |
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Effective date of registration: 20240116 Address after: Zurich, SUI Patentee after: Hitachi Energy Co.,Ltd. Address before: Swiss Baden Patentee before: Hitachi energy Switzerland AG |
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