CN105185889A - Naked crystal encapsulation adjustable photoelectric LED lighting assembly and manufacturing process - Google Patents
Naked crystal encapsulation adjustable photoelectric LED lighting assembly and manufacturing process Download PDFInfo
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- CN105185889A CN105185889A CN201510390050.XA CN201510390050A CN105185889A CN 105185889 A CN105185889 A CN 105185889A CN 201510390050 A CN201510390050 A CN 201510390050A CN 105185889 A CN105185889 A CN 105185889A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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Abstract
A naked crystal encapsulation adjustable photoelectric LED lighting assembly is characterized in that each of the two ends of an alternating-current bus on a heat conduction and insulation substrate is connected with two rectifier diodes, and the positive electrode of formed direct current is connected with the positive electrode of a series light-emitting diode (LED) and a resistor R1 and then connected with a VCC pad of a linear driver IC chip; a GATE pad of the IC chip is connected with a G pad (gate) of an MOSFET; a Sense pad of the IC chip is connected with an S pad (source) of the MOSFET and a resistor Rcs and then connected with a ground line; a GND pad of the IC chip is connected with the ground line; and the drain of the MOSFET is connected with the negative electrode of the LED. The distance between the positions of the IC chip and the MOSFET should be large enough to make heat dissipated timely, and the surface of the IC chip should be provided with a heat conduction and insulation non-transparent cover layer to prevent the function of the IC chip from being affected. A naked crystal encapsulation adjustable photoelectric LED lighting assembly manufacturing process is characterized by comprising five basic steps including substrate manufacturing, die bonding, wire welding, damming and dispensing, and two auxiliary steps including testing and substrate separating and testing.
Description
Technical field
The present invention relates to LED illumination driving power technology and technical field of semiconductor encapsulation.
Background technology
LED illumination is that the revolutionary character of lighting field changes, and its product and Technical Development Objective and trend improve performance further, ensures useful life and reduce costs, and as semiconductor lighting, optoelectronic integration encapsulation is important technological development direction and approach.
Mostly development and the differentiation in Discrete device packaging technical foundation of LED technology, but have very large particularity.The function that LED has mainly accomplished input and output electricity, protection tube core normally works, exports visible ray, has electrical quantity to have again design and the technical requirement of optical parameter simultaneously, simply the encapsulation of traditional discrete device cannot be used for LED.The encapsulation of LED pin formula adopts lead frame to make the pin of various encapsulation external form, research and develop the encapsulating structure of successfully putting on market at first, in 2002, the LED (SMDLED) of surface mount package gradually accept by market, turn to SMD to meet whole electron trade development main trend from pinned encapsulation.
The most emerging COB is encapsulated and multiple chips directly can be encapsulated in suitable substrate and directly be dispelled the heat by substrate, the drawback such as some light, dazzle etc. that COB light source module can avoid discrete light sources combination of devices to exist effectively in performance, can also by adding the combination of suitable red chip, under the prerequisite not reducing source efficiency and life-span, effectively improve the color rendering (accomplishing more than 90) of light source.In application, it is simpler and convenient that COB light source module can make the assembling of lighting factory produce.In production, existing technology and equipment can support the extensive manufacture of rate of good quality rate COB light source module.
Current COB encapsulation technology is main still for the light-source encapsulation of LED as single part category, because driving power part more complicated, relate to multiple electronic devices and components kind, various electronic devices and components involved by current driving power could be used after encapsulation separately.
LED illumination driving power mainly contains four major types, resistance-capacitance depressurization, current regulator diode, linear power supply and Switching Power Supply.Driving power is that power supply supply in various situation is converted to specific voltage electric current with the transducer of driving LED luminescence.General power supply input has multiple situation, and for LED illumination, output one is decided to be the constant current source that can change voltage with the change of LED forward voltage drop value.
The simplest class driving power is capacitance-resistance voltage reduction circuit, but its electric current is large with voltage fluctuation, and not shock-resistant, can have a strong impact on the LED life-span, power factor (PF) is low, can only be used for the small power LED illumination situation that ask for something is not high, and effect is poor.
Driving power based on current regulator diode is Second Type, and current regulator diode was originally mainly used in instrument and meter, afterwards because its constant-current characteristics is used to the situation of some low-power LED.It is simple that constant current driving as LED illumination has circuit structure, advantage with low cost, but have and think that the dynamic range of current current regulator diode only has 30V, sometimes may up to the normal voltage waving interval of upper hectovolt lower than electrical network, in fact constant current cannot be kept, in Larger Dynamic high voltage situation, oneself power consumption is large, system effectiveness is low, simultaneously temperature rise can cause LED light to decline increasing, and be not suitable for general illumination therefore, simultaneously again because the limitation of current regulator diode production technology brings the consistency of performance product proportion that is bad and suitable use lower, easily there are when extensive use the serious problems that product quality cannot be stable.
LED illumination driving power based on IC chip is a large amount of mainstream scheme used at present, has good constant current accuracy and various function, is mainly divided into Switching Power Supply and the large type of linear power supply two.
Switching Power Supply type has again isolated form and non-isolation type two kinds, and the constant current that isolated form is applicable to low-voltage and high-current exports, and peripheral component is more, and volume is comparatively large, is mainly used in external power supply; Non-isolation type is applicable to high voltage small area analysis and exports, and volume is relatively little, and efficiency is high, is mainly used in built-in power.In general, Switching Power Supply is complicated, relates to component number many, comprises electrochemical capacitor, so be not suitable at present carrying out naked brilliant integrative packaging.
Linear IC chip LED driving power scheme has that circuit is relatively simple, peripheral component is little, volume is little, cost is low, be easy to integrated advantage.The IC chip of encapsulation separately separately in the LED of encapsulation separately and linear power supply and components and parts have been had all to be contained on same plate at present, be called DOB (DriveronBoard,) the photoelectricity engine namely often said, most new progress has employed power supply that the packaged LED of COB encapsulation technology and all kinds of independent encapsulation components and parts form on same plate, as the OSRAM product P revaLEDCoreACPROlightengines released recently.The driving power used due to DOB or photoelectricity engine remains the IC chip of encapsulation separately separately and relevant components and parts, and the maximum defect of Linear Driving power source design is heat dissipation problem, heat radiation especially can high concentration in linear power supply IC chip and MOSFET power tube.Traditional IC chip and component package use plastic casing, and heat conduction is poor, and the heat dissipation problem of Linear Driving power supply can reduce stability and the reliability of whole system greatly.If it is good and on the substrate of insulation, can address this problem, reduce relevant cost that the IC chip of driving power and each components and parts are directly encapsulated in heat conductivility with naked crystalline form simultaneously.
With similar COB encapsulation technology to the naked wafer device integrative packaging of naked brilliant IC chip and polytype and size on a heat conductive insulating substrate, it is new trial, especially accomplish that mass automatic production has suitable technology and technology difficulty, not accomplish that laboratory sample just means the problem of solving, can accomplish that extensive high yield production just really has essential meaning.Because the circuit of current regulator diode is very simple, also easily carry out naked crystalline substance encapsulation, but current regulator diode is simple Devices and simple drive circuit, therefore, the naked crystalline substance encapsulation reference value that the naked crystalline substance of current regulator diode encapsulates successfully for driving IC chip is little, because driving IC chip is not only
Driving IC chip itself wants complicated, and the driving power scheme simultaneously based on driving IC chip also wants complicated many.
It is very different for comparing with similar COB encapsulation technology with the encapsulation technology of components and parts for IC chip at present.
The encapsulation technology of IC chip and components and parts, i.e. semiconductor packaging, develop long-standing, because encapsulation is necessary for IC chip and components and parts, also be vital, IC chip and components and parts must be isolated from the outside, and to prevent the impurity in air from causing electric property to decline to the corrosion of chip circuit or components and parts material, the chip simultaneously after encapsulation and components and parts are also convenient to install and transport.Existing encapsulation technology is lead-in wire of IC chip or components and parts ambroin or ceramic material being packed separately, the Design and manufacture of printing board PCB that the quality of encapsulation technology directly has influence on chip self performance and is attached thereto.
Mainly common semiconductor package is equipped with two large class: dip DIP (DualIn-linePackage) and paster packaging SMTs (SurfaceMountingTechnology) at present.Semiconductor device has many concrete packing forms, can be divided into pin insert type, surface attaching type and senior encapsulation three class by the profile encapsulated, size, textural classification.From DIP, SOP, QFP, PGA, BGA to CSP again to SIP, a technical indicator generation is more advanced than a generation.All things considered, semiconductor packages experienced by three significant innovations: be encapsulated into surface patch encapsulation in the eighties in 20th century from pin plug-in type for the first time, drastically increase the packaging density on printed circuit board (PCB); Second time is the appearance at the ball-type matrix package nineties in 20th century, meets the demand of market to high pin, improves the performance of semiconductor device; And wafer-class encapsulation, systematicness encapsulation etc. are the third time innovations occurred now now.
All naked trichite optical diodes (LED) and all naked brilliant devices of Linear Driving power supply will be comprised IC chip integrative packaging on heat conductive insulating substrate by us, belong to system in package.These needs are optimized existing LED illumination Linear Driving power source design, comprise and carry out corresponding improvement to driving IC chip, solve the technology on links and process difficulties, could realize the naked brilliant systematicness encapsulation mixing multiple wafer type.The realization of this systematicness encapsulation effectively can solve the heat dissipation problem of existing LED illumination Linear Driving power supply, greatly improve the consistency of the Performance and quality of system, and can to reduce in existing procucts a lot of in the middle of production link reduce costs, and mass automatic production optoelectronic integration LED illumination assembly can be carried out.
Summary of the invention
The technical solution adopted in the present invention is: determine the LED illumination Linear Driving electricity optimization scheme of applicable naked crystalline substance encapsulation with experiment and determine particular electrical circuit, according to the wiring diagram of the naked brilliant packaged LED light fixture of specific circuit design and select suitable heat-conducting insulation material substrate and by wiring diagram so that print conductive materials to substrate to become printed circuit, verify naked crystalline substance encapsulation each technological process link with these technological processes by corresponding naked brilliant LED by experiment, naked brilliant IC chip, naked brilliant rectifier diode, last test checking is done in naked brilliant MOSFET and the whole integrative packaging of resistance to the printed circuit on aforesaid substrate.
Particular electrical circuit of the present invention has multiple display form, comprise according to be applicable to naked crystalline substance encapsulation LED illumination Linear Driving electricity optimization scheme obtain circuit theory diagrams, designed by above-mentioned schematic diagram wiring diagram and make printed circuit and thereafter naked crystalline substance encapsulated the actual complete circuit of rear assembly, be all particular electrical circuit of the present invention.
A kind of naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly of the present invention is: in the printed circuit on heat-conducting insulation material substrate, alternating current bus two ends respectively connect negative pole and the positive pole of two naked brilliant rectifier diodes, through the positive pole of the naked trichite optical diode (LED) of direct current positive pole connection series connection that four naked brilliant rectifier diodes are formed, connect the VCC pad that a resistance R1 connects naked brilliant IC chip more simultaneously; The GATE pad of naked brilliant IC chip connects the G pad (grid) of external naked brilliant MOSFET; The S pad (source electrode) that the Sense pad of naked brilliant IC chip connects external naked brilliant MOSFET simultaneously contact resistance Rcs connects ground wire again; The GND pad of naked brilliant IC chip connects ground wire; The D pad (drain electrode) of naked brilliant MOSFET connects naked brilliant LED negative pole.
Above-mentioned naked brilliant IC chip is linear constant current LED driving IC chip, and its basic necessary part comprises VCC end inner clamp circuit (Clamp) and UVLO (UnderVoltageLockout); Also comprise grounding terminal (GND); Also comprise internal control (Control) and drive (Driver) part and driving stage GATE to hold and current sample/arrange SENSE holds.Above-mentioned resistance R1 value is according to the setting parameter of naked brilliant IC chip.The peak value continuous current of naked brilliant LED of connecting is Ipeak, can be determined by Ipeak=Vref/Rcs, and the Vref of naked brilliant IC chip
Specific naked brilliant IC chip is fixed, therefore by setting Rcs value again by peak value continuous current Ipeak during naked brilliant IC chip controls LED conducting.
Can be any satisfactory material at above-mentioned heat-conducting insulation material substrate, current ceramic substrate one of selects very well.
In the printed circuit of aforesaid substrate, naked brilliant IC chip and naked brilliant MOSFET need have enough physical distances with the normal work avoiding the heat radiation of MOSFET to affect naked brilliant IC chip.
In the printed circuit of aforesaid substrate, the surface of naked brilliant IC chip needs the covering of heat conductive insulating opaque material, in order to avoid light has an impact to naked brilliant IC chip cause abnormal performance, current above-mentioned heat conductive insulating opaque material can use the opaque silica gel of heat conduction.
Experimental verification is above-mentioned to be applicable to the naked brilliant packaged LED linear driving power prioritization scheme that throws light on and to have the function of controllable silicon light modulation, and experiment also verifies that the linear optoelectronic integration light fixture of above-mentioned naked crystalline substance encapsulation has controllable silicon light modulation function.
In the present invention, a kind of manufacturing process flow of naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly is:
The first step, substrate manufacturing process flow process:
Heat conductive insulating substrate blank is manufactured by required specification, when using ceramic substrate, then firing ceramics blank;
Determine the LED illumination Linear Driving electricity optimization scheme of applicable naked crystalline substance encapsulation with experiment and determine particular electrical circuit, again according to particular electrical circuit determination wiring diagram, wherein the desired location of naked brilliant MOSFET and naked brilliant IC chip needs separately enough distances, by wiring diagram with known technology by print conductive materials on aforesaid substrate blank, row baking-curing becomes printed circuit again, electric conducting material at present for printed circuit is silver-containing material, also can be other class; Relevant assigned address in above-mentioned printed circuit, is fixed on assigned address with thickness heat-conductivity conducting material by resistance R1 and Rcs of setting resistance, and existing is elargol with above-mentioned thickness heat-conductivity conducting material, and carries out baking-curing;
Second step, die bond technological process: at the relevant position of aforesaid substrate printed circuit, the naked trichite optical diode (LED) of setting quantity is fixed on assigned address with thickness heat-conducting insulation material, be now heat conductive silica gel with above-mentioned thickness heat-conducting insulation material, and carry out baking-curing, then, at the relevant position of aforesaid substrate printed circuit, with thickness heat-conductivity conducting material, four naked brilliant rectifier diodes, naked brilliant IC chip, a naked brilliant MOSFET are fixed on assigned address, and carry out baking-curing, existing is elargol with above-mentioned thickness heat-conductivity conducting material;
3rd step, bonding wire craft flow process:
On the above-mentioned substrate completed naked brilliant LED and other naked brilliant device die bond, on the assigned address of each device, welding conductive wire, with the printed circuit traces on connection substrate, whole circuit on completing substrate connect, and above-mentioned conductive wire can be all kinds of electric conducting material, now uses gold thread;
Above-mentioned second step and three step process flow process are when naked brilliant LED uses flip-chip packaged form, then carry out according to the requirement of reverse installation process flow process, the technological process relating to naked brilliant IC chip and other naked brilliant device then remains unchanged substantially.
4th step, test technology flow process: on the substrate completing above-mentioned technological process, connects the power line of corresponding voltage, confirm that having completed technological process reaches requirement, meanwhile, can obtain related optical and electrical parameter by test, whether checking product reaches designed requirement;
5th step, box dam technological process: complete above-mentioned all technological processes and after test passes, aforesaid substrate use heat conductive insulating opaque material note the ring layer (dam making setting height and width on the position set by wiring diagram,) and carry out baking-curing, existing is the opaque silica gel of heat conduction with described heat conductive insulating opaque material;
6th step, gluing process flow process: by the heat conductive insulating transparent material of designing requirement preparation containing known attach ratios fluorescent material, complete on the substrate of box dam above-mentioned, to setting height in use the described heat conductive insulating transparent material containing known attach ratios fluorescent material to be infused in space that above-mentioned ring layer formed, and carry out baking-curing, be now heat conductive transparent silica gel with the described heat conductive insulating transparent material containing known attach ratios fluorescent material;
7th step, point plate and test technology flow process: when linked into an integrated entity by multiple substrate complete above-mentioned flow process simultaneously, at this moment need above-mentioned multiple substrate to carry out a point plate, namely each substrate is no longer connected with other substrate.To the above-mentioned substrate having completed whole technological process, connect the power line of corresponding voltage, test obtains related optical and electrical parameter, confirms that having completed technological process reaches corresponding requirements, and carries out go-on-go classification according to relevant parameter.
In above-mentioned whole seven step process flow processs, first to the 3rd and the 5th to the 6th totally five step process flow processs be typical process flow, be naked crystalline substance encapsulation necessary technological process, the 4th and the 7th step process flow process is then assisting workflows.
The invention has the beneficial effects as follows the heat dissipation problem that effectively can solve existing LED illumination Linear Driving power supply and exist, greatly improve the consistency of the Performance and quality of this kind of illuminator, reduce numerous production links that existing LED illumination product relates to, and mass automatic production optoelectronic integration assembly can be carried out.
Accompanying drawing explanation
Fig. 1 is the invention process case linear power supply scheme typical application circuit figure
Fig. 2 is the naked brilliant Linear Driving IC chip RC001B surface texture figure of the invention process case
Fig. 3 is the circuit theory diagrams of the invention process case naked crystalline substance encapsulation particular electrical circuit
The basic cut-away view of Fig. 4 naked brilliant IC chip needed for the invention process case
Fig. 5 is the oscillogram of the invention process case naked crystalline substance encapsulation particular electrical circuit
Fig. 6 is the invention process case naked crystalline substance encapsulation particular electrical circuit wiring and printed circuit diagram
Fig. 7 is the naked brilliant package assembling structure of the invention process case and line bonding figure
Fig. 8 is the naked brilliant package assembling dimension scale figure of the invention process case
Embodiment
With reference to the accompanying drawings, the embodiment of naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly of the present invention and manufacturing process is described in detail.We select
Linear Driving IC chip RC001B (China national Department of Intellectual Property Integrated circuit layouts registration number BS.14500659X, June 27 2014 layout-design applying date, date of declaration: on December 17th, 2014, notification number 9835, day has been created in layout-design: on May 21st, 2013), Figure 1 shows that the typical application circuit figure of RC001B, Figure 2 shows that naked brilliant surface texture figure and the pad mark of RC001B, related data single wafer size thickness, the electrode size composition etc. of naked crystalline substance are as follows:
The electrology characteristic of RC001B is as follows:
Except special mark, standard test condition is V
cC=10V, T
a=25 DEG C
Be determined through experimentation based on RC001B and be applicable to the naked brilliant LED illumination Linear Driving electricity optimization scheme encapsulated, determine particular electrical circuit, as shown in Figure 3, above-mentioned particular electrical circuit only remains rectifier bridge, linear IC chip, MOSFET and two resistance R1 and Rcs to the circuit theory of above-mentioned particular electrical circuit;
The repertoire of linear constant current LED driving IC chip RC001B is not used in above-mentioned particular electrical circuit, Fig. 4 show in linear constant-current LED driving IC chip with relate to LED illumination Linear Driving prioritization scheme and the relevant necessary part of particular electrical circuit in the present invention, comprising VCC end has inner clamp circuit (Clamp) and UVLO (UnderVoltageLockout); Also comprise grounding terminal (GND); Also comprise internal control (Control) and drive (Driver) part and driving stage GATE to hold and current sample/arrange SENSE holds.Above-mentioned internal control and drive part relate to concrete mechanism, and linear constant current LED driving IC chip has above-mentioned corresponding function to realize above-mentioned particular electrical circuit be that fundamental sum is necessary for purposes of the invention, and any concrete mechanism realizing corresponding function is all equivalent.
In above-mentioned particular electrical circuit, when alternating current bus is opened, alternating current becomes the LED of DC conductance to series connection by rectifier bridge, linear driving IC chip is by connecting galvanic starting resistance (R1) charging simultaneously, make VCC voltage stabilization in certain numerical value by inner clamp circuit (Clamp) when reaching setting V, and automatically close linear driving IC chip when dropping to UVLO (UnderVoltageLockout) threshold voltage;
As shown in Figure 5, the crest voltage in above-mentioned particular electrical circuit after rectifier bridge must be greater than the naked brilliant LED electrical pressure VLED of set series connection, and after bridge, voltage has crest and trough.This naked brilliant IC chip according to sine wave change rise reach VLED time automatic conducting series connection naked brilliant LED, when voltage continuation rising, VLED remains unchanged, unnecessary pressure drop is born by MOSFET, when falling under voltage, VLED remains unchanged, the unnecessary pressure drop born by MOSFET gradually reduces, when lower than VLEAD, output current is then zero.Only have when voltage reaches VLED, just have output current, the LED at this moment connected just can be bright.In a voltage sinusoidal period of wave, ON time and wavelength time are than being conduction ratio, and setting VLED numerical value is extremely important, and the too high then conduction ratio of numerical value is low, and namely fluorescent lifetime is short, and LED utilance is low; Numerical value is too low also to lower efficiency, and causes more power consumptions of MOSFET when boosting, and therefore VLED setting carries out adjusting and optimizing according to the actual requirements.
In above-mentioned particular electrical circuit, Linear Driving IC chip by Rcs resistance to LED current sampling and and IC internal reference voltage Vref compare generation control signal, reach LED constant current export target.Be Ipeak=Vref/Rcs by the peak current of series LED, and the Vref of Linear Driving IC chip has fixed in IC design with when producing, the Vref of RC001B is 400mV, sets Rcs thus just by peak current Ipeak during Linear Driving IC chip controls LED conducting.
The electric current flowing through series LED in above-mentioned particular electrical circuit is average current ILED=Ipeak*D (conduction ratio), when about D=0.5, the power factor (PF) of more than 0.9 can be obtained, but output current can increase with input voltage and increase in this case, and the ripple of output current is also larger simultaneously.
Experiment finds that above-mentioned particular electrical circuit has the function of controllable silicon light modulation, through experimental verification, mainly because eliminate the filter capacitor C1 in typical apply (Fig. 1) in this class circuit, when the above-mentioned filter capacitor of add-back in this particular electrical circuit, then circuit no longer has the function of controllable silicon light modulation.
According to above-mentioned particular electrical circuit, can be designed for the wiring diagram being printed onto substrate, Fig. 6 is the typical wiring diagram based on above-mentioned particular electrical circuit.
Experiment finds that naked brilliant IC chip and naked brilliant MOSFET position on substrate must keep enough physical distances, when both have bonding wire to connect, the heat that naked brilliant MOSFET produces badly influences the normal performance of naked brilliant IC chip, lead to system abnormity, when both positions on ceramic substrate separate enough distances and do not have bonding wire to be connected, then naked brilliant IC chip performance is acted normally, and the impact of naked crystalline substance encapsulation on each device physics and electric property is different from the situation of each device in encapsulation separately as can be seen here.
Therefore, estimate the performance of Linear Driving IC chip when the physics carried out in naked brilliant encapsulation situation and electric property also can be different from its independent encapsulation with built-in MOSFET, although they are the same with not being with built-in MOSFET Linear Driving IC chip in circuit theory, the core of its typical application circuit is all similar to Fig. 1..Linear Driving IC chip at present with built-in MOSFET has BP5112 (Bright Power Semiconductor Co., Ltd.), MT7601 (Maxic Technology Corporation), SM2082 (Shenzhen City Sunmoon Microelectronics Co., Ltd) etc., and this kind of built-in MOSFET Linear Driving IC chip is also bringing larger problem for heat radiation during higher-wattage LED illumination.
Experiment finds that the surface of naked brilliant IC chip needs heat conductive insulating opaque material and covers, otherwise can have an impact to naked brilliant IC chip at light in some cases and cause performance abnormal, and experiment proves that using the opaque silica gel of heat conduction to cover solves the problems referred to above.
According to above-mentioned wiring diagram, by print conductive materials on heat-conducting insulation material substrate, become corresponding printed circuit, then in above-mentioned printed circuit, the naked crystalline substance of naked brilliant LED and all devices is comprised the relevant position that IC chip is all encapsulated into above-mentioned printed circuit, particular location as shown in fig. 7, the naked brilliant LED (being labeled as the little solid rectangular block above LED letter and the little solid rectangular block onesize on the surface of the substrate that distributes) of set quantity as required, four naked brilliant rectifier diodes (being labeled as MB6S letter periphery four solid blockages), a naked brilliant Linear Driving IC chip (being labeled as a solid blockage above RC001B letter), a naked brilliant MOSFET (being labeled as the closed square above MOS letter), R1 (being labeled as the solid rectangular block on the R1 letter left side) and Rcs (being labeled as the solid rectangular block on the right of Rcs letter).After naked crystalline substance has encapsulated, alternating current bus two ends respectively connect negative pole and the positive pole of two naked brilliant rectifier diodes thus, through the positive pole of the naked trichite optical diode (LED) of direct current positive pole connection series connection that four naked brilliant rectifier diodes are formed, connect the VCC pad that a resistance R1 connects naked brilliant Linear Driving IC chip more simultaneously; The GATE pad of naked brilliant IC connects the G pad (grid) of naked brilliant MOSFET; The Sense pad of naked brilliant Linear Driving IC chip connects the S pad (source electrode) of naked brilliant MOSFET, and contact resistance Rcs connects ground wire more simultaneously; The GND pad of naked brilliant Linear Driving IC chip connects ground wire; The D pad (drain electrode) of naked brilliant MOSFET connects naked brilliant LED negative pole; Final formation complete circuit.
Through repeatedly testing, determine that the manufacturing process flow of the naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly in the present invention is: the first step, substrate manufacturing process flow process:
Manufacture heat conductive insulating substrate blank by required specification, use ceramic substrate in the invention process case, then to fire specification be unit area 28mmX28mm thickness is the ceramic blank sheet of 1mm, every block independence potsherd contains four unit potsherds, leave line of cut each other, so that follow-up point of plate;
Experimentally determine the LED illumination Linear Driving electricity optimization scheme of applicable naked crystalline substance encapsulation, determine that the circuit theory diagrams of particular electrical circuit are as Fig. 3, again according to above-mentioned particular electrical circuit circuit theory diagrams determination wiring diagram, as Fig. 6, by above-mentioned wiring diagram with known technology by print conductive materials on aforesaid substrate blank, row baking-curing becomes printed circuit again, also as shown in Figure 6, although wiring diagram is the same with printed circuit pattern, but wiring diagram is design drawing, and printed circuit has been the actual conducting channel be printed on ceramic substrate, the electric conducting material that case of the present invention is used for printed circuit is silver-containing material, relevant assigned address, is fixed on assigned address with elargol by the R1 (being labeled as the solid rectangular block on the R1 left side) of appropriate resistance and Rcs (being labeled as the solid rectangular block on the right of Rcs), carries out baking-curing as shown in Figure 7,
Second step, die bond technological process:
At relevant position as shown in Figure 7, the naked trichite optical diode (LED) of setting quantity is fixed on assigned address with heat-conducting insulation material, and carry out baking-curing, case of the present invention uses above-mentioned heat-conducting insulation material to be heat conductive silica gel, then, at relevant position as shown in Figure 7, with heat-conductivity conducting material by four naked brilliant rectifier diodes (being labeled as MB6S letter periphery four solid blockages), a naked brilliant Linear Driving IC chip (being labeled as a solid blockage above RC001B letter), a naked brilliant MOSFET (being labeled as the closed square above MOS letter) is fixed on assigned address, and carry out baking-curing, in case of the present invention, above-mentioned heat-conductivity conducting material is elargol,
3rd step, bonding wire craft flow process:
On the above-mentioned substrate completed naked brilliant LED, naked brilliant Linear Driving IC chip and other naked brilliant device die bond, as shown in Figure 7, on the assigned address of each device, welding conductive wire, with the printed circuit traces on connection substrate, whole circuit ON on completing substrate, in case of the present invention, above-mentioned conductive wire uses gold thread;
4th step, test technology flow process: on the substrate completing above-mentioned technological process, connects the power line of 220V voltage, confirm that having completed technological process reaches requirement, meanwhile, obtain related optical and electrical parameter by test, whether checking product reaches designed requirement;
5th step, box dam technological process:
Complete above-mentioned all technological processes and after test passes, as shown in Figure 7, aforesaid substrate uses heat conductive insulating opaque material note on desired location, make outer layer that diameter is 24mm and diameter is the inner layer of 7mm, ring layer height is approximately 1mm, then carries out baking-curing; Heat conductive insulating opaque material described in case of the present invention is the opaque silica gel of heat conduction; Setting inner layer covers naked brilliant Linear Driving IC chip surface simultaneously in addition is also solve naked brilliant IC chip surface to need one of method covered;
6th step, gluing process flow process: the heat conductive insulating transparent material containing attach ratios fluorescent material by designing requirement and the preparation of known flow process, complete on the substrate of box dam above-mentioned, to ring layer height in use the described heat conductive insulating transparent material containing fluorescent material to be infused in space that inside and outside ring layer formed, as shown in Figure 8, and carry out baking-curing, containing the heat conductive transparent silica gel that the heat conductive insulating transparent material of fluorescent material is containing fluorescent material described in the invention process case; 7th step, point plate and test technology flow process:
Connect into a slice by four unit substrate in case of the present invention and complete above-mentioned flow process simultaneously, more above-mentioned four unit substrate are carried out a point plate, namely each unit substrate is no longer connected with other unit substrate.To the above-mentioned substrate having completed whole technological process, connect the power line of corresponding 220V voltage, test obtains related optical and electrical parameter, confirms that having completed whole technological process reaches corresponding requirements, and carries out go-on-go classification according to relevant parameter.
Above-mentioned first to the 3rd and the 5th to the 6th totally five step process flow processs be typical process flow, it has been the necessary technological process of naked crystalline substance encapsulation, 4th and the 7th step process flow process is then assisting workflows, mainly ensureing that product quality and final products use, is not that naked crystalline substance encapsulates the technological process that must have.
In the invention process case, have power be the naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly of 6W as exemplary embodiments, concrete device source and setting parameter as follows:
27 naked brilliant LED: the naked brilliant high-voltage LED from three peace Photoelectric Co., Ltd. product types being S-30BBHUP-B;
R1 resistance is 820 kilohms, and Rcs resistance is 9.1 ohm, all to improve people's living condition producer from Taiwan ROYALOHM;
Naked brilliant rectifier diode product type is MB6S, comes Electronic Science and Technology Co., Ltd. purchased from Shenzhen Si Date;
Naked brilliant MOSFET product type is 2N60, purchased from China Resources Hua Jing Microtronics A/S;
Naked brilliant Linear Driving IC chip is own product, and its detail parameters discloses in the invention process case.
The product test result of above-mentioned exemplary embodiments 6W assembly: color rendering index is 84.4, luminous flux is 616.1LM, and light efficiency is 102.39LM/W, and voltage is 220.01V, and electric current is 0.03029A, and power is 6.017W, and power factor (PF) is 0.9029.
The invention process case has completed the test in multiple power situation and test, and design parameter and test result will not enumerate.
Above with reference to drawings describing the specific embodiment of the present invention and exemplary embodiments, but those skilled in the art can understand, when without departing from the spirit and scope of the present invention, can also do various change and replacement to embodiment, these change and replace and all drop in claims of the present invention limited range.
Claims (10)
1. a naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly, is characterized in that, be integrally encapsulated on heat-conducting insulation material substrate with particular electrical circuit and semiconductor packaging by naked brilliant LED and naked brilliant driving power device;
Above-mentioned particular electrical circuit is on heat-conducting insulation material substrate, exchange negative pole and the positive pole that goddess of lightning's line two ends respectively connect two naked brilliant rectifier diodes, through the positive pole of the naked trichite optical diode (LED) of direct current positive pole connection series connection that four naked brilliant rectifier diodes are formed, connect the VCC pad that a resistance R1 connects naked brilliant IC chip more simultaneously; The GATE pad of naked brilliant IC chip connects the G pad (grid) of naked brilliant MOSFET; The Sense pad of naked brilliant IC chip connects the S pad (source electrode) of naked brilliant MOSFET, and contact resistance Rcs connects ground wire more simultaneously; The GND pad of naked brilliant IC chip connects ground wire; The D pad (drain electrode) of naked brilliant MOSFET connects naked brilliant LED negative pole;
In above-mentioned particular electrical circuit, naked brilliant IC chip and naked brilliant MOSFET have enough physical distances affects the normal work of naked brilliant IC chip to avoid the heat radiation of MOSFET, and naked brilliant IC chip surface needs heat conductive insulating opaque material and covers in order to avoid affect it and normally work simultaneously.
2. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly according to claim 1, is characterized in that heat-conducting insulation material substrate is ceramic substrate.
3. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly according to claim 1, it is characterized in that naked brilliant IC chip is Linear Driving IC chip, basic necessary part comprises VCC end inner clamp circuit (Clamp) and UVLO (UnderVoltageLockout); Also comprise grounding terminal (GND); Also comprise internal control (Control) and drive (Driver) part and driving stage GATE to hold and current sample/arrange SENSE holds.
4. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly according to claim 1, is characterized in that naked brilliant LED is naked brilliant high-voltage LED.
5. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly according to claim 1, is characterized in that the heat conductive insulating opaque material covering naked brilliant IC chip surface is the opaque silica gel of heat conduction.
6. a naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly manufacturing process, is characterized in that:
In substrate manufacturing process flow process, comprise and make heat-conducting insulation material substrate blank by required specification, by particular electrical circuit principle diagram design circuit layout card, by foregoing circuit wiring diagram with known technology by print conductive materials on heat-conducting insulation material substrate blank, row baking-curing becomes printed circuit again, known insulating material covering is carried out to above-mentioned printed circuit relevant portion, then row baking-curing; Printed circuit diagram relevant position on aforesaid substrate, is fixed on assigned address with thickness heat-conductivity conducting material by resistance R1 and Rcs of setting resistance, and carries out baking-curing;
In die bond technological process, printed circuit diagram relevant position on aforesaid substrate, with thickness heat-conducting insulation material, the naked trichite optical diode (LED) of setting quantity is fixed on assigned address, and carry out baking-curing, printed circuit diagram relevant position on aforesaid substrate, with thickness heat-conductivity conducting material, four naked brilliant rectifier diodes, naked brilliant IC chip, a naked brilliant MOSFET are fixed on assigned address, and carry out baking-curing;
In bonding wire craft flow process, on the above-mentioned substrate completed naked brilliant LED and other naked brilliant device die bond, on the assigned address of each device, weld metal wire, to link the circuit on substrate, the whole circuit on completing substrate connect;
In test technology flow process, complete on naked brilliant LED and other naked brilliant device die bond and bonding wire substrate above-mentioned, connected the power line of corresponding voltage, to confirm that completing technological process reaches requirement, obtained related optical and electrical parameter by test simultaneously;
In box dam technological process, above-mentioned completed die bond and bonding wire tester substrate qualified after, on aforesaid substrate, use thickness heat conductive insulating opaque material note desired location on substrate to form the ring layer (dam) of setting height and width, and carry out baking-curing;
In gluing process flow process, by the thickness heat-conducting insulation material of designing requirement preparation containing known attach ratios fluorescent material, complete on the substrate of box dam above-mentioned, use the above-mentioned thickness heat-conducting insulation material containing known attach ratios fluorescent material note to setting height in the space that box dam is formed, and carry out baking-curing;
In point plate and test technology flow process, when being linked into an integrated entity completed above-mentioned flow process simultaneously by multiple substrate, above-mentioned multiple substrate is carried out a point plate, namely each substrate is no longer connected with other substrate, the above-mentioned substrate having completed whole technological process is connected to the power line of corresponding voltage, test obtains related optical and electrical parameter, confirm that having completed technological process reaches requirement, and carry out go-on-go classification according to parameter.
7. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly manufacturing process according to claim 6, it is characterized in that in substrate manufacturing process flow process with on print conductive materials to heat-conducting insulation material substrate blank for be printed onto on heat-conducting insulation material substrate blank with silver-containing material.
8. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly manufacturing process according to claim 6, is characterized in that thickness heat-conductivity conducting material is elargol described in substrate manufacturing process flow process and die bond technological process.
9. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly manufacturing process according to claim 6, is characterized in that thickness heat-conducting insulation material is heat conductive silica gel described in die bond technological process and gluing process flow process.
10. naked crystalline substance encapsulation tunable optical photoelectric integral LED illumination assembly manufacturing process according to claim 6, is characterized in that thickness heat conductive insulating opaque material is the opaque silica gel of heat conduction in box dam technological process.
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| CN201510390050.XA CN105185889B (en) | 2015-07-03 | 2015-07-03 | Naked brilliant encapsulation tunable optical photoelectric integral LED illumination component and manufacturing process |
| PCT/CN2016/088052 WO2017005135A1 (en) | 2015-07-03 | 2016-07-01 | Naked crystal encapsulation light adjustable photoelectric led lighting assembly and manufacturing process |
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| CN105698137A (en) * | 2016-01-29 | 2016-06-22 | 中山昂帕微电子技术有限公司 | MOSFET-containing system-in-package LED lighting driving power assembly and manufacturing process |
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| WO2017005135A1 (en) * | 2015-07-03 | 2017-01-12 | 中山昂欣科技有限责任公司 | Naked crystal encapsulation light adjustable photoelectric led lighting assembly and manufacturing process |
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| WO2017005135A1 (en) * | 2015-07-03 | 2017-01-12 | 中山昂欣科技有限责任公司 | Naked crystal encapsulation light adjustable photoelectric led lighting assembly and manufacturing process |
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| CN109442232A (en) * | 2018-11-02 | 2019-03-08 | 海宁市鑫诚电子有限公司 | A kind of LED lamp panel |
| CN117082676A (en) * | 2023-10-16 | 2023-11-17 | 深圳市暗能量电源有限公司 | Packaging structure of linear constant current driving chip and preparation method thereof |
| CN117082676B (en) * | 2023-10-16 | 2024-02-02 | 深圳市暗能量电源有限公司 | Packaging structure of linear constant current driving chip and preparation method thereof |
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| WO2017005135A1 (en) | 2017-01-12 |
| CN105185889B (en) | 2019-05-14 |
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