CN117082676B - Packaging structure of linear constant current driving chip and preparation method thereof - Google Patents
Packaging structure of linear constant current driving chip and preparation method thereof Download PDFInfo
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- CN117082676B CN117082676B CN202311332669.6A CN202311332669A CN117082676B CN 117082676 B CN117082676 B CN 117082676B CN 202311332669 A CN202311332669 A CN 202311332669A CN 117082676 B CN117082676 B CN 117082676B
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 23
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims abstract description 6
- 239000011241 protective layer Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 7
- 238000005520 cutting process Methods 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- 238000012858 packaging process Methods 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
- H05B45/30—Driver circuits
- H05B45/345—Current stabilisation; Maintaining constant current
Abstract
The invention belongs to the technical field of linear constant current driving chips, and particularly relates to a packaging structure of a linear constant current driving chip and a preparation method thereof. The linear constant current driving circuit is integrated on the bare die through a thick film packaging process and is directly fixed on the substrate, and electrical connection is completed through the electrode on the substrate, so that the setting of discrete peripheral devices is reduced, the production cost is effectively reduced through a mature thick film packaging process, and the yield is improved; and the bare crystal is directly fixed on the upper side of the substrate, so that the chip has better insulativity, better heat conductivity, larger current carrying capacity and lower thermal resistance, and the performance of the linear constant current driving chip is greatly improved.
Description
Technical Field
The invention belongs to the technical field of linear constant current driving chips, and particularly relates to a packaging structure of a linear constant current driving chip and a preparation method thereof.
Background
The LED linear constant current driving chip is a key element for controlling and driving the LED lamp. The constant current control of the LED can be realized, and the brightness and the stability of the beam quality of the LED are ensured.
In the prior art, the linear constant current driving chip is generally produced based on a standard silicon-based chip sealing and measuring process, and when the linear constant current driving chip is applied to an LED lighting product, the linear constant current driving chip is often insufficient in performance in the aspects of temperature, power consumption, heat loss and the like. Therefore, some products are manufactured by adopting a customized special-shaped packaging structure, the performance of the chip is improved to a certain extent, but the cost is increased due to the customization scheme.
Disclosure of Invention
The invention aims to overcome the defects of insufficient performance of a linear constant current driving chip produced based on a standard silicon-based chip sealing and measuring process or over-high production cost of a customized special-shaped packaging structure in the prior art, thereby providing the packaging structure of the linear constant current driving chip and a preparation method thereof.
A packaging structure of a linear constant current driving chip comprises a substrate, a bare die and an electrode; a linear constant current driving circuit is formed in the bare crystal, and the bare crystal is fixed in the middle of the upper side of the substrate; the electrode comprises a first electrode and a second electrode which are respectively fixed on the upper side of the substrate, the first electrode is electrically connected with the grounding end of the linear constant current driving circuit, and the second electrode is electrically connected with the drain end of the linear constant current driving circuit.
Further, the first electrode and the second electrode are fixed to a front portion and a rear portion of an upper side of the substrate, respectively.
Further, the left and right sides of the substrate are respectively fixed with the conductors to form pins, and are respectively electrically connected with the first electrode and the second electrode.
Further, the first electrode and the second electrode are respectively and electrically connected with the linear constant current driving circuit through conductive silver paste.
Further, a third electrode is fixed on the upper side of the substrate, and the third electrode is electrically connected with the current sensing end of the linear constant current driving circuit and is electrically connected with the first electrode through a current sensing resistor.
Further, the semiconductor device further comprises a protective layer, wherein the protective layer is fixed on the upper side of the substrate and covers the bare die.
Further, the linear constant current driving circuit comprises a reference high-voltage power supply module, a constant current module, a reference voltage module and an MOS tube; the drain electrode of the MOS tube is connected with the drain end of the linear constant current driving circuit; the high-voltage power supply module is connected with the drain end of the MOS tube and outputs internal power supply; the source electrode of the MOS is grounded through a reference resistor, and a detection voltage is formed on the reference resistor; the constant current module is connected with the reference resistor and the reference voltage module, and is connected with the grid electrode of the MOS tube, and is used for controlling the conduction state of the MOS tube.
Further, the linear constant current driving circuit further comprises an over-temperature adjusting module, wherein the over-temperature adjusting module is electrically connected with the reference voltage module and is used for detecting the temperature of the linear constant current driving circuit and adjusting the output of the reference voltage module.
Further, the linear constant current driving circuit further comprises a linear voltage compensation module, wherein the linear voltage compensation module is electrically connected with the reference voltage module and is connected with the drain end of the linear constant current driving circuit, and the linear constant current driving circuit is used for obtaining the input voltage of the drain end and adjusting the output of the reference voltage module.
The preparation method of the packaging structure of the linear constant current driving chip comprises the following steps:
step S1: printing an electrode on the upper side of the substrate;
step S2: fixing a bare die on the upper side of the substrate, and electrically connecting the bare die with the electrode;
step S3: and cutting the substrate to form a packaging structure of a plurality of linear constant current driving chips, wherein the packaging structure of each linear constant current driving chip comprises a bare die.
Further, the method also comprises the following steps: and printing a protective layer on the upper side of the substrate, wherein the protective layer covers the bare die, and a mark is arranged on the upper side of the protective layer.
The beneficial effects are that:
1. according to the invention, the linear constant current driving circuit is integrated on the bare die through the thick film packaging process and is directly fixed on the substrate, and the electrical connection is completed through the electrode on the substrate, so that the setting of discrete peripheral devices is reduced, the production cost is effectively reduced through the mature thick film packaging process, and the yield is improved; and the bare crystal is directly fixed on the upper side of the substrate, so that the chip has better insulativity, better heat conductivity, larger current carrying capacity and lower thermal resistance, and the performance of the linear constant current driving chip is greatly improved.
2. According to the invention, the electrodes are electrically connected with the conductors on the left side and the right side of the substrate, and when the circuit board is used, the electrodes can be directly welded with the bonding pads on the circuit board through the conductors, so that the circuit board is convenient to install and practical; through the setting of protective layer, reduced the exposure risk of naked brilliant, can avoid naked brilliant short circuit and receive physical damage, increased the reliability of chip.
3. According to the invention, the current output of the chip can be regulated according to the needs by arranging the current sensing end, so that the use is more flexible; through the arrangement of the over-temperature adjusting module, the chip circuit can be effectively protected in the over-temperature process, and the stability of the circuit is further improved; by setting the linear voltage compensation module, the current regulation rate of the output current under better input voltage change can be realized.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic top view of a chip package structure according to the present invention;
FIG. 2 is a schematic perspective view of a chip package structure according to the present invention;
FIG. 3 is a schematic top view of another chip package structure according to the present invention;
FIG. 4 is a schematic diagram of a linear constant current driving circuit according to the present invention;
fig. 5 is a schematic diagram of another structure of the linear constant current driving circuit of the present invention.
Reference numerals: 1. a substrate; 2. bare crystal; 31. a first electrode; 32. a second electrode; 33. a third electrode; 4. a current sense resistor; 5. pins.
Detailed Description
In order to make the above objects, features and advantages of the present application more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. This application is, however, susceptible of embodiment in many other forms than those described herein and similar modifications can be made by those skilled in the art without departing from the spirit of the application, and therefore the application is not to be limited to the specific embodiments disclosed below.
In the description of the present application, it should be understood that the terms "center," "longitudinal," "transverse," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," etc. indicate orientations or positional relationships based on the orientation or positional relationships shown in the drawings, are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be configured and operated in a particular orientation, and therefore should not be construed as limiting the present application.
Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "plurality" is at least two, such as two, three, etc., unless explicitly defined otherwise.
In this application, unless specifically stated and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art as the case may be.
In this application, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
It will be understood that when an element is referred to as being "fixed" or "disposed" on another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like are used herein for illustrative purposes only and are not meant to be the only embodiment.
Embodiment one:
referring to fig. 1, 2 and 3, the present embodiment provides a package structure of a linear constant current driving chip, which includes a substrate 1, a die 2 and an electrode; a linear constant current driving circuit is formed in the bare die 2, and the bare die 2 is fixed in the middle of the upper side of the substrate 1; the electrode comprises a first electrode 31 and a second electrode 32 which are respectively fixed on the upper side of the substrate 1, the first electrode 31 is electrically connected with the grounding of the linear constant current driving circuit, and the second electrode 32 is electrically connected with the drain end of the linear constant current driving circuit.
Specifically, the first electrode 31 and the second electrode 32 are respectively fixed to the front and rear of the upper side of the substrate 1, and the first electrode 31 and the second electrode 32 are rectangular and are disposed against the edge of the substrate 1. The left and right sides of the substrate 1 are respectively fixed to conductors to form pins 5, and are respectively electrically connected to the first electrode 31 and the second electrode 32. In this embodiment, the first electrode 31 and the second electrode 32 are electrically connected to the linear constant current driving circuit through conductive silver paste, respectively. The electrodes are electrically connected with the conductors on the left side and the right side of the substrate 1, so that the electrodes can be directly welded with the bonding pads on the circuit board through the conductors when the circuit board is used, and the circuit board is convenient to install and practical.
Referring to fig. 4 and 5, specifically, the linear constant current driving circuit includes a REFERENCE high voltage power Supply module JFET HV Supply, a constant current module LDO Constant Current, a REFERENCE voltage module REFERENCE, and a MOS transistor; the drain electrode of the MOS tube is connected with the drain end of the linear constant current driving circuit; the high-voltage power supply module is connected with the drain end Drian of the MOS tube and outputs internal power supply; the source electrode of the MOS is grounded through a reference resistor, and a detection voltage is formed on the reference resistor; the constant current module is connected with the reference resistor and the reference voltage module, and is connected with the grid electrode of the MOS tube, and is used for controlling the conduction state of the MOS tube.
The AC voltage of the power grid is subjected to bridge rectification to form a bus voltage HV, the HV voltage is input to the drain end of the linear constant current chip after being loaded, and VDD is output from the drain end through the high-voltage power supply module to supply power to each control unit in the linear constant current circuit. And the source electrode of the MOS tube is connected with a built-in reference resistor Rcs. The load current flows through the built-in resistor to form a detection voltage Vcs, the detection voltage Vcs is compared with a reference Vref of a constant current module in the chip, and the on-off time of the built-in MOS tube is adjusted to realize the output of the load fixed current.
In other embodiments of the present invention, no reference resistor is provided in the linear constant current driving circuit; a third electrode 33 is further fixed on the upper side of the substrate 1, and the third electrode 33 is electrically connected to the current sensing terminal CS of the linear constant current driving circuit and is electrically connected to the first electrode 31 through a current sensing resistor 4 (denoted as Rcs). The driving current can be flexibly set by changing the resistance value of the current sensing resistor 4. After the driving current flows through the current sensing resistor 4, a detection voltage Vcs is formed, and the detection voltage Vcs is compared with a reference voltage Vref of a constant current module in the chip, so that the on-off time of the built-in MOS is adjusted to realize fixed current output.
Output currentThe calculation formula is as follows:
；
the linear constant current drive circuit further comprises an over-temperature adjusting module, wherein the over-temperature adjusting module is electrically connected with the reference voltage module and used for detecting the temperature of the linear constant current drive circuit and adjusting the output of the reference voltage module. The linear constant current driving circuit further comprises an over-temperature adjusting module, and the over-temperature adjusting module is electrically connected with the reference voltage module.
And after the temperature rise of the Thermal and OTP sensing chip exceeds the preset junction temperature of the chip, the Reference voltage Vcs is adjusted and changed through comparison of the Reference module and the Reference Vref of the constant current module, so that the output current of the linear constant current driving circuit is reduced. The chip over temperature is promoted to reduce the load current, so that the load temperature rise is reduced, and the load and the chip are protected.
The linear constant current driving circuit further comprises a linear voltage compensation module Line Comp, wherein the linear voltage compensation module is electrically connected with the reference voltage module and is connected with the drain end of the linear constant current driving circuit, and the linear constant current driving circuit is used for obtaining the input voltage of the drain end and adjusting the output of the reference voltage module. The device further comprises a linear voltage compensation module, wherein the linear voltage compensation module is electrically connected with the reference voltage module.
The AC voltage of the power grid is subjected to bridge rectification to form a bus voltage HV, then the HV voltage is input into the drain end of the linear constant current drive circuit after passing through the LED lamp string, and VDD is output from the drain end through the high-voltage power supply module to supply power to each control unit in the linear constant current drive circuit. Because the AC input voltage of the power grid inevitably has certain voltage fluctuation, the variation of the AC input voltage can affect the difference value between the load voltage and the HV voltage, and the voltage difference value can further affect the variation of the AC input power, and the power consistency of the control load is not utilized. The linear voltage compensation module is connected with the resistor R through the drain terminal D Detecting load voltage V D And HV voltage, then through the baseThe reference Vref of the constant current module is adjusted by the quasi-voltage module, and then the detection voltage Vcs is compared with the reference Vref, so that the load current can be changed along with the change of the AC input, and the total input power of the load is not influenced.
The linear constant current driving circuit realizes the constant current effect by collecting the reference resistance voltage Vcs flowing through the Rcs resistor and comparing with the internal Vref reference voltage and adjusting the MOS conduction condition of the internal saturation state through the constant current module, and in the embodiment, the relation formula of line voltage compensation is as follows:
；
by arranging the current sensing end, the current output of the chip can be regulated according to the needs, and the use is more flexible; through the arrangement of the over-temperature adjusting module, the chip circuit can be effectively protected in the over-temperature process, and the stability of the circuit is further improved; through the arrangement of the linear voltage compensation module, the better linear adjustment rate of the output current under the change of the input voltage can be realized.
As a further improvement of the present embodiment, a protective layer is further included, which is fixed to the upper side of the substrate 1 and covers the bare die 2. Through the setting of protective layer, reduced the exposure risk of naked brilliant 2, can avoid naked brilliant 2 short circuit and receive physical damage, increased the reliability of chip.
Embodiment two:
the embodiment provides a preparation method of the packaging structure of the linear constant current driving chip, which comprises the following steps:
step S1: printing an electrode on the upper side of the substrate 1;
step S2: fixing a bare die 2 on the upper side of the substrate 1, and electrically connecting the bare die 2 with the electrode;
step S3: and cutting the substrate 1 to form a plurality of packaging structures of linear constant current driving chips, wherein each packaging structure of the linear constant current driving chips comprises a bare die 2.
The method also comprises the following steps: and printing a protective layer on the upper side of the substrate 1, wherein the protective layer covers the bare die 2, and a mark is arranged on the upper side of the protective layer.
Specifically, the method comprises the following steps:
printing electrodes on the upper side of the substrate 1, wherein the electrodes are arranged in a matrix on the substrate 1, and the electrodes are square;
fixing a bare die 2 on the upper side of the substrate 1, specifically, fixing the bare die 2 between every two adjacent electrodes in the same row, and electrically connecting the bare die 2 with the electrodes;
printing a protective layer on the upper side of the substrate 1, wherein the protective layer covers the bare die 2; specifically, the material of the protective layer is plastic EME-G620-A.
A mark is arranged on the upper side of the protective layer, and the mark is used for distinguishing the model, the parameter or the polarity of the chip;
cutting the substrate 1 to divide the electrode into a left part and a right part which are respectively electrically connected with the left die 2 and the right die 2 of the electrode to form a packaging structure of a plurality of linear constant current driving chips, wherein the packaging structure of each linear constant current driving chip comprises one die 2; the size of each chip is 1100 x 1190um.
Pins 5 are printed on both sides of the substrate 1 and electrically connected to the first electrode 31 and the second electrode 32
Detecting electrical properties and appearance;
and (5) finishing taping and boxing according to the chip size.
According to the embodiment of the invention, the linear constant current driving circuit is integrated on the bare die 2 through the thick film packaging process and is directly fixed on the substrate 1, and the electrical connection is completed through the electrode on the substrate 1, so that the setting of discrete peripheral devices is reduced, the production cost is effectively reduced through the mature thick film packaging process, and the yield is improved; and the bare die 2 is directly fixed on the upper side of the substrate 1, so that the chip has better insulativity, better heat conductivity, larger current carrying capacity and lower thermal resistance, and the performance of the linear constant current driving chip is greatly improved.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples only represent a few embodiments of the present application, which are described in more detail and are not to be construed as limiting the scope of the claims. It should be noted that it would be apparent to those skilled in the art that various modifications and improvements could be made without departing from the spirit of the present application, which would be within the scope of the present application. Accordingly, the scope of protection of the present application is to be determined by the claims appended hereto.
Claims (9)
1. The packaging structure of the linear constant current driving chip is characterized by comprising a substrate (1), a bare crystal (2) and an electrode; a linear constant current driving circuit is formed in the bare die (2), and the bare die (2) is fixed in the middle of the upper side of the substrate (1); the electrode comprises a first electrode (31) and a second electrode (32) which are respectively fixed on the upper side of the substrate (1), the first electrode (31) is electrically connected with the grounding end of the linear constant current driving circuit, and the second electrode (32) is electrically connected with the drain end of the linear constant current driving circuit; the first electrode (31) and the second electrode (32) are respectively fixed to the front part and the rear part of the upper side of the substrate (1);
a third electrode (33) is further fixed on the upper side of the substrate (1), and the third electrode (33) is electrically connected with the current sensing end of the linear constant current driving circuit and is electrically connected with the first electrode (31) through a current sensing resistor (4);
the packaging structure of the linear constant current driving chip is prepared by a preparation method comprising the following steps:
step S1: printing electrodes on the upper side of the substrate (1), wherein the electrodes are arranged in a matrix on the substrate (1);
step S2: fixing a bare die (2) on the upper side of the substrate (1), and electrically connecting the bare die (2) with the electrode; wherein the bare die (2) is fixed between every two adjacent electrodes in the same row, and the bare die (2) is electrically connected with the electrodes;
step S3: and cutting the substrate (1) to form a packaging structure of a plurality of linear constant current driving chips, wherein each packaging structure of the linear constant current driving chips comprises one bare crystal (1).
2. The package structure of the linear constant current driving chip according to claim 1, wherein the left and right sides of the substrate (1) are respectively fixed with a conductor to form pins (5) and are respectively electrically connected with the first electrode (31) and the second electrode (32).
3. The package structure of a linear constant current driving chip according to claim 1, wherein the first electrode (31) and the second electrode (32) are electrically connected to the linear constant current driving circuit through conductive silver paste, respectively.
4. The package structure of the linear constant current driving chip according to claim 1, further comprising a protective layer fixed to an upper side of the substrate (1) and covering the bare die (2).
5. The packaging structure of the linear constant current driving chip according to claim 1, wherein the linear constant current driving circuit comprises a reference high-voltage power supply module, a constant current module, a reference voltage module and a MOS tube; the drain electrode of the MOS tube is connected with the drain end of the linear constant current driving circuit; the high-voltage power supply module is connected with the drain end of the MOS tube and outputs internal power supply; the source electrode of the MOS is grounded through a reference resistor, and a detection voltage is formed on the reference resistor; the constant current module is connected with the reference resistor and the reference voltage module, and is connected with the grid electrode of the MOS tube, and is used for controlling the conduction state of the MOS tube.
6. The package structure of a linear constant current driving chip according to claim 5, wherein the linear constant current driving circuit further comprises an over-temperature adjusting module electrically connected with the reference voltage module, for detecting the temperature of the linear constant current driving circuit and adjusting the output of the reference voltage module.
7. The package structure of a linear constant current driving chip according to claim 5, wherein the linear constant current driving circuit further comprises a linear voltage compensation module, the linear voltage compensation module is electrically connected with the reference voltage module and is connected with a drain terminal of the linear constant current driving circuit, and the linear constant current driving circuit is used for obtaining an input voltage of the drain terminal and adjusting an output of the reference voltage module.
8. A method for manufacturing a package structure of a linear constant current driving chip according to any one of claims 1 to 7, comprising the steps of:
step S1: printing an electrode on the upper side of the substrate (1);
step S2: fixing a bare die (2) on the upper side of the substrate (1), and electrically connecting the bare die (2) with the electrode;
step S3: and cutting the substrate (1) to form a packaging structure of a plurality of linear constant current driving chips, wherein each packaging structure of the linear constant current driving chips comprises a bare die (2).
9. The method for manufacturing a package structure of a linear constant current driving chip according to claim 8, further comprising the steps of: and printing a protective layer on the upper side of the substrate (1), wherein the protective layer covers the bare die (2), and a mark is arranged on the upper side of the protective layer.
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| CN205402577U (en) * | 2016-03-07 | 2016-07-27 | 天水华天科技股份有限公司 | Integration LED module based on NULL |
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| CN110671616A (en) * | 2019-08-29 | 2020-01-10 | 佛山市中昊光电科技有限公司 | Constant voltage drive COB light source |
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| CN117082676A (en) | 2023-11-17 |
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Inventor after: Peng Guoyun Inventor after: Yin Baohua Inventor after: Sun Jianfei Inventor before: Peng Guoyun Inventor before: Yin Baohua Inventor before: Sun Jianfei |