CN105185715A - 一种tft基板、tft开关管及其制造方法 - Google Patents

一种tft基板、tft开关管及其制造方法 Download PDF

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CN105185715A
CN105185715A CN201510629335.4A CN201510629335A CN105185715A CN 105185715 A CN105185715 A CN 105185715A CN 201510629335 A CN201510629335 A CN 201510629335A CN 105185715 A CN105185715 A CN 105185715A
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semiconductor layer
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slimming
substrate
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CN105185715B (zh
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石龙强
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Abstract

本发明公开了一种TFT基板、TFT开关管及其制造方法，该方法包括：在基板上设置栅极层；对栅极层的侧区域的至少一部分沿着栅极层的厚度方向进行薄型化处理，以形成两薄型化区域；在栅极层的上方设置半导体层；在半导体层上设置源极层和漏极层，其中源极层和漏极层分别与半导体层接触的区域分别对应两薄型化区域。通过上述方式，本发明能够省去掺杂步骤，并达到良好的欧姆接触，从而解决Schottky接触的问题。

Description

一种TFT基板、TFT开关管及其制造方法
技术领域
本发明涉及显示技术领域，尤其是涉及一种TFT基板、TFT开关管及其制造方法。
背景技术
基于氧化物半导体的薄膜场效应晶体管(TFT)是未来显示领域的热点，近年来得到了广泛的研究和发展。其中，作为有源沟道层的无定形铟镓锌氧化合物(a-IGZO)薄膜，迁移率可高达80cm2/Vs，而非晶硅(a-Si)的迁移率仅0.5～0.8cm2/Vs。并且a-IGZO可与a-Si大尺寸量产制程兼容。因此，IGZO在下一代液晶显示(LCD)和有机发光二极管(OLED)中具有很大的应用前景。
但是，在金属和IGZO相接触时形成Schottky(肖特基)接触，在接触的界面处半导体能带弯曲，形成势垒。势垒的存在会导致大的界面电阻，即Schottky(肖特基)电阻。Schottky电阻会导致TFT元件开态电流不足，亚阈值摆幅(SubthresholdSwing，SS)过大，元件稳定性下降，从而会影响画面显示品质。
所以，降低金属和IGZO的接触电阻，形成Ohmic(欧姆)接触，是决定半导体元件性能好坏的一个重要因素。现有技术的欧姆接触形成的方法之一是在与金属接触的半导体区域进行重掺杂(n+IGZO)，使得界面的空乏区变窄，电子有更多的机会直穿隧(穿隧效应)。但是现有技术的欧姆接触方式需要额外进行掺杂步骤，从而增加了制作成本。
发明内容
本发明主要解决的技术问题是提供一种TFT基板、TFT开关管及其制造方法，能够省去掺杂步骤，并达到良好的欧姆接触，从而解决Schottky接触的问题。
为解决上述技术问题，本发明采用的一个技术方案是：提供一种TFT开关管的制造方法，该方法包括：提供一基板；在基板上设置栅极层，其中，栅极层包括中间区域和分别位于中间区域两侧的侧区域；对侧区域的至少一部分沿着栅极层的厚度方向进行薄型化处理，以形成两薄型化区域，薄型化区域的厚度小于中间区域的厚度；在栅极层的上方设置半导体层；在半导体层上设置源极层和漏极层，其中源极层和漏极层分别与半导体层接触的区域分别对应两薄型化区域，使得背光源的光能够通过薄型化区域后照射到半导体层中，从而使半导体层与源极层和漏极层之间形成欧姆接触。
其中，在栅极层的上方设置半导体层的步骤之前进一步包括：在栅极层上设置栅极绝缘层。
其中，在基板上设置栅极层的步骤进一步包括：通过物理气相沉积的方法在基板上设置一金属层；对金属层进行光刻、蚀刻以及脱膜工艺，以形成栅极层。
其中，对侧区域的至少一部分沿着栅极层的厚度方向进行薄型化处理的步骤进一步包括：对侧区域的至少一部分进行光刻、蚀刻以及脱膜工艺，以形成薄型化区域。
其中，半导体层的材质为铟镓锌氧化合物；在栅极层的上方设置半导体层的步骤进一步包括：通过物理气相沉积的方法在栅极绝缘层上设置一铟镓锌氧化合物层；对铟镓锌氧化合物层进行光刻、蚀刻以及脱膜工艺，以形成半导体层，半导体层对应薄型化区域和中间区域设置。
其中，在半导体层上设置源极层和漏极层的步骤进一步包括：通过物理气相沉积的方法在半导体层上设置一金属层；对金属层进行光刻、蚀刻以及脱膜工艺，以形成源极层和漏极层，并且源极层和漏极层与半导体层接触的区域分别对应两薄型化区域。
为解决上述技术问题，本发明采用的另一个技术方案是：提供一种TFT开关管，该TFT开关管包括：基板；栅极层，设置在基板上，其中，栅极层包括中间区域和分别位于中间区域两侧的侧区域，侧区域的至少一部分沿着栅极层的厚度方向进行薄型化处理，以形成两薄型化区域，薄型化区域的厚度小于中间区域的厚度；半导体层，设置在栅极层的上方；源极层和漏极层，设置在半导体层上，其中源极层和漏极层分别与半导体层接触的区域分别对应两薄型化区域，使得背光源的光能够通过薄型化区域后照射到半导体层中，从而使半导体层与源极层和漏极层之间形成欧姆接触。
其中，TFT开关管进一步包括：栅极绝缘层，设置在栅极层和半导体层之间。
其中，半导体层的材质为铟镓锌氧化合物。
为解决上述技术问题，本发明采用的又一个技术方案是：提供一种TFT基板，该TFT基板包括如前文任一项所述的TFT开关管。
本发明的有益效果是：区别于现有技术的情况，本发明的TFT开关管的制造方法具体为：首先提供一基板，然后在基板上设置栅极层，其中，栅极层包括中间区域和分别位于中间区域两侧的侧区域，进而对侧区域的至少一部分沿着栅极层的厚度方向进行薄型化处理，以形成两薄型化区域，薄型化区域的厚度小于中间区域的厚度，进一步在栅极层的上方设置半导体层，最后在半导体层上设置源极层和漏极层，其中源极层和漏极层分别与半导体层接触的区域分别对应两薄型化区域，使得背光源的光能够通过薄型化区域后照射到半导体层中，从而使半导体层与源极层和漏极层之间形成欧姆接触。因此，本发明只需要在制造过程中通过光照等工艺就可以形成掺杂区域，不需要额外进行掺杂操作，从而节省制作成本，并能达到良好的欧姆接触，从而解决Schottky接触的问题。
附图说明
图1是本发明实施例提供的一种TFT开关管的制造方法的流程图；
图2是对应图1所示的方法的制程图；
图3是本发明实施例提供的一种TFT开关管的结构示意图；
图4是本发明实施例提供的一种液晶显示装置的结构示意图。
具体实施方式
请一并参阅图1和图2，图1是本发明实施例提供的一种TFT开关管的制造方法的流程图，图2是对应图1所示的方法的制程图。如图1和图2所示，本实施例的方法包括以下步骤：
步骤S1：提供一基板11。
本步骤中，基板11优选为玻璃基板，在提供基板11的同时对基板11进行清洗、烘干等操作，以提供一干净的玻璃基板。
步骤S2：在基板11上设置栅极层120，其中，栅极层120包括中间区域121和分别位于中间区域121两侧的侧区域122。
本步骤具体为：首先通过物理气相沉积的方法在基板11上设置一金属层12，然后对金属层12进行光刻、蚀刻以及脱膜工艺，以形成栅极层120。
其中，本步骤的蚀刻工艺优选为湿蚀刻，可选择过硫酸铵、硫酸/铬酸、硫酸或双氧水做成蚀刻液。由于蚀刻液的成本较低，因此本步骤选择湿蚀刻的方式可以降低蚀刻的成本。
步骤S3：对侧区域122的至少一部分沿着栅极层120的厚度方向进行薄型化处理，以形成两薄型化区域123，薄型化区域123的厚度小于中间区域121的厚度。可选的，薄型化区域123的厚度与中间区域121的厚度之比大概为1：:100。
本步骤中，具体为首先对侧区域122的至少一部分进行光刻、蚀刻以及脱膜工艺，以形成薄型化区域123。
其中，本步骤的蚀刻工艺优选为干蚀刻。具体而言，利用蚀刻气体在电场加速作用下形成的等离子体中的活性基，与被腐蚀材料发生化学反应，形成挥发性物质并随着气流带走。其中，蚀刻气体包括氟碳化合物、氟化的碳氢化合物等。由于干蚀刻可以通过控制电场来准确控制蚀刻的图形，因此本步骤采用干蚀刻可以提高蚀刻的精度。
步骤S4：在栅极层120的上方设置半导体层13。
在本步骤之前，还包括在栅极层120上设置栅极绝缘层15。
其中，半导体层120的材质优选为铟镓锌氧化合物。本步骤具体为通过物理气相沉积的方法在栅极绝缘层15上设置一铟镓锌氧化合物层。然后对铟镓锌氧化合物层进行光刻、蚀刻以及脱膜工艺，以形成半导体层13，半导体层13对应薄型化区域123和中间区域121设置。
其中，本步骤的蚀刻工艺优选为湿蚀刻。蚀刻液的选择如前文所述，在此不再赘述。
步骤S5：在半导体层13上设置源极层140和漏极层141，其中源极层140和漏极层141分别与半导体层13接触的区域分别对应两薄型化区域123，使得背光源的光能够通过薄型化区域123后照射到半导体层13中，从而使半导体层13与源极层140和漏极层141之间形成欧姆接触。如图2所示，光照照射到半导体层13后产生光生载流子，形成掺杂区域(N+IGZO)131和133，使得半导体层13与源极层140和漏极层141有良好的欧姆接触，从而降低接触阻抗。
本步骤中，具体为通过物理气相沉积的方法在半导体层13上设置一金属层14，然后对金属层14进行光刻、蚀刻以及脱膜工艺，以形成源极层140和漏极层141，并且源极层140和漏极层141与半导体层13接触的区域分别对应两薄型化区域123。
其中，本步骤的蚀刻工艺优选为湿蚀刻。蚀刻液的选择如前文所述，在此不再赘述。
因此，本实施例只需要在制造过程中通过光照等工艺就可以形成掺杂区域，不需要额外进行掺杂操作，从而节省制作成本。进一步的，本实施例可以达到良好的欧姆接触，从而解决Schottky接触的问题。
更进一步的，本实施例采用干、湿蚀刻方法的结合，在既保证了蚀刻精度的前提下，还节省了成本。
本发明实施例还提供了一种TFT开关管，该TFT开关管通过前文所述的方法制造而成。具体请参阅图3，图3是本发明实施例提供的一种TFT开关管的结构示意图。
如图3所示，本实施例的TFT开关管10包括基板11、栅极层120、半导体层13、源极层140和漏极层141。
其中，栅极层120设置在基板11上。其中，栅极层120包括中间区域121和分别位于中间区域121两侧的侧区域122，侧区域122的至少一部分沿着栅极层120的厚度方向进行薄型化处理，以形成两薄型化区域123，薄型化区域123的厚度小于中间区域121的厚度。可选的，薄型化区域123的厚度与中间区域121的厚度之比大概为1：:100。
半导体层13设置在栅极层120的上方。进一步的，在栅极层120和半导体层13之间还设置有一栅极绝缘层15。本实施例中，半导体层13的材质优选为铟镓锌氧化合物。
源极层140和漏极层141设置在半导体层13上，其中源极层140和漏极层141分别与半导体层13接触的区域分别对应两薄型化区域123，使得背光源的光能够通过薄型化区域123后照射到半导体层13中，从而使半导体层13与源极层140和漏极层141之间形成欧姆接触。如图所示，光照照射到半导体层13后产生光生载流子，形成掺杂区域(N+IGZO)131和133，使得半导体层13与源极层140和漏极层141有良好的欧姆接触，从而降低接触阻抗。
本发明实施例还提供一种液晶显示装置，如图4所示，液晶显示装置40包括显示面板41和背光模组42，背光模组42向显示面板41提供背光光源。其中显示面板41进一步包括相对设置的TFT基板411、彩膜基板412以及TFT基板411和彩膜基板412之间的液晶层413。本实施例的TFT基板411为前文所述的TFT开关管10。
因此，本实施例只需要在制造过程中通过光照等工艺就可以形成掺杂区域，不需要额外进行掺杂操作，从而节省制作成本。进一步的，本实施例可以达到良好的欧姆接触，从而解决Schottky接触的问题。
以上所述仅为本发明的实施例，并非因此限制本发明的专利范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (10)

1.一种TFT开关管的制造方法，其特征在于，所述方法包括：
提供一基板；
在所述基板上设置栅极层，其中，所述栅极层包括中间区域和分别位于所述中间区域两侧的侧区域；
对所述侧区域的至少一部分沿着所述栅极层的厚度方向进行薄型化处理，以形成两薄型化区域，所述薄型化区域的厚度小于所述中间区域的厚度；
在所述栅极层的上方设置半导体层；
在所述半导体层上设置源极层和漏极层，其中所述源极层和漏极层分别与所述半导体层接触的区域分别对应两所述薄型化区域，使得背光源的光能够通过所述薄型化区域后照射到所述半导体层中，从而使所述半导体层与所述源极层和漏极层之间形成欧姆接触。
2.根据权利要求1所述的方法，其特征在于，所述在所述栅极层的上方设置半导体层的步骤之前进一步包括：
在所述栅极层上设置栅极绝缘层。
3.根据权利要求1所述的方法，其特征在于，在所述基板上设置栅极层的步骤进一步包括：
通过物理气相沉积的方法在所述基板上设置一金属层；
对所述金属层进行光刻、蚀刻以及脱膜工艺，以形成所述栅极层。
4.根据权利要求1所述的方法，其特征在于，所述对所述侧区域的至少一部分沿着所述栅极层的厚度方向进行薄型化处理的步骤进一步包括：
对所述侧区域的至少一部分进行光刻、蚀刻以及脱膜工艺，以形成所述薄型化区域。
5.根据权利要求2所述的方法，其特征在于，所述半导体层的材质为铟镓锌氧化合物；
所述在所述栅极层的上方设置半导体层的步骤进一步包括：
通过物理气相沉积的方法在所述栅极绝缘层上设置一铟镓锌氧化合物层；
对所述铟镓锌氧化合物层进行光刻、蚀刻以及脱膜工艺，以形成所述半导体层，所述半导体层对应所述薄型化区域和中间区域设置。
6.根据权利要求1所述的方法，其特征在于，所述在所述半导体层上设置源极层和漏极层的步骤进一步包括：
通过物理气相沉积的方法在所述半导体层上设置一金属层；
对所述金属层进行光刻、蚀刻以及脱膜工艺，以形成所述源极层和漏极层，并且所述源极层和所述漏极层与所述半导体层接触的区域分别对应两所述薄型化区域。
7.一种TFT开关管，其特征在于，所述TFT开关管包括：
基板；
栅极层，设置在所述基板上，其中，所述栅极层包括中间区域和分别位于所述中间区域两侧的侧区域，所述侧区域的至少一部分沿着所述栅极层的厚度方向进行薄型化处理，以形成两薄型化区域，所述薄型化区域的厚度小于所述中间区域的厚度；
半导体层，设置在所述栅极层的上方；
源极层和漏极层，设置在所述半导体层上，其中所述源极层和漏极层分别与所述半导体层接触的区域分别对应两所述薄型化区域，使得背光源的光能够通过所述薄型化区域后照射到所述半导体层中，从而使所述半导体层与所述源极层和漏极层之间形成欧姆接触。
8.根据权利要求7所述的TFT开关管，其特征在于，所述TFT开关管进一步包括：
栅极绝缘层，设置在所述栅极层和所述半导体层之间。
9.根据权利要求7所述的TFT开关管，其特征在于，所述半导体层的材质为铟镓锌氧化合物。
10.一种TFT基板，其特征在于，所述TFT基板包括如权利要求7-9任一项所述的TFT开关管。
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