CN105164813B - 用于光伏电池或模块的背接触式基板 - Google Patents

用于光伏电池或模块的背接触式基板 Download PDF

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Publication number
CN105164813B
CN105164813B CN201480025022.1A CN201480025022A CN105164813B CN 105164813 B CN105164813 B CN 105164813B CN 201480025022 A CN201480025022 A CN 201480025022A CN 105164813 B CN105164813 B CN 105164813B
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China
Prior art keywords
film
alloy
electrode
thin film
selenization
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Expired - Fee Related
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CN201480025022.1A
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English (en)
Chinese (zh)
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CN105164813A (zh
Inventor
M.乌里恩
J.帕尔姆
G.吕滕贝格
R.莱希纳
Y.邦圣科姆
L.J.辛格
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Saint Gobain Glass France SAS
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Saint Gobain Glass France SAS
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3613—Coatings of type glass/inorganic compound/metal/inorganic compound/metal/other
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3626—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer one layer at least containing a nitride, oxynitride, boronitride or carbonitride
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3639—Multilayers containing at least two functional metal layers
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3649—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer made of metals other than silver
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/36—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal
    • C03C17/3602—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer
    • C03C17/3668—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties
    • C03C17/3678—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions at least one coating being a metal the metal being present as a layer the multilayer coating having electrical properties specially adapted for use in solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/169—Thin semiconductor films on metallic or insulating substrates
    • H10F77/1694—Thin semiconductor films on metallic or insulating substrates the films including Group I-III-VI materials, e.g. CIS or CIGS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
  • Sustainable Energy (AREA)
CN201480025022.1A 2013-05-03 2014-04-30 用于光伏电池或模块的背接触式基板 Expired - Fee Related CN105164813B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP13166460.9A EP2800145B1 (en) 2013-05-03 2013-05-03 Back contact substrate for a photovoltaic cell or module
EP13166460.9 2013-05-03
PCT/EP2014/058839 WO2014177621A1 (en) 2013-05-03 2014-04-30 Back contact substrate for a photovoltaic cell or module

Publications (2)

Publication Number Publication Date
CN105164813A CN105164813A (zh) 2015-12-16
CN105164813B true CN105164813B (zh) 2018-05-25

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CN201480025022.1A Expired - Fee Related CN105164813B (zh) 2013-05-03 2014-04-30 用于光伏电池或模块的背接触式基板

Country Status (6)

Country Link
US (1) US20160064581A1 (enExample)
EP (1) EP2800145B1 (enExample)
JP (1) JP2016517183A (enExample)
KR (1) KR20160005072A (enExample)
CN (1) CN105164813B (enExample)
WO (1) WO2014177621A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2800146A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module
US9876130B1 (en) * 2016-10-27 2018-01-23 International Business Machines Corporation Method for forming silver-copper mixed kesterite semiconductor film
CN107507878A (zh) * 2017-09-06 2017-12-22 蚌埠玻璃工业设计研究院 一种薄膜太阳能电池用多层膜结构的光伏背板玻璃
CN107601921A (zh) * 2017-09-06 2018-01-19 蚌埠玻璃工业设计研究院 一种薄膜太阳能电池用光伏背板玻璃的制备方法
EP3918637B1 (en) * 2019-02-06 2024-05-22 First Solar, Inc. Metal oxynitride back contact layers for photovoltaic devices
TWI692093B (zh) * 2019-05-03 2020-04-21 久盛光電股份有限公司 電磁波檢測裝置
TW202200828A (zh) * 2020-06-24 2022-01-01 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 含鉬薄膜的氣相沉積
CN113345644B (zh) * 2021-06-07 2022-10-11 北方民族大学 一种柔性Ag/Zn导电薄膜及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2369635A2 (fr) * 2001-01-31 2011-09-28 Saint-Gobain Glass France Substrat transparent muni d'une électrode
WO2013023161A1 (en) * 2011-08-10 2013-02-14 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates

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US4366336A (en) * 1980-10-16 1982-12-28 Chevron Research Company Age and heat stabilized photovoltaic cells
JPH01307278A (ja) * 1988-06-04 1989-12-12 Nippon Mining Co Ltd 太陽電池
DE4442824C1 (de) 1994-12-01 1996-01-25 Siemens Ag Solarzelle mit Chalkopyrit-Absorberschicht
JP2003051673A (ja) * 2001-08-06 2003-02-21 Mitsui Mining & Smelting Co Ltd プリント配線板用銅箔及びそのプリント配線板用銅箔を用いた銅張積層板
US20050019203A1 (en) * 2003-07-23 2005-01-27 Yuhichi Saitoh Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate
US7875945B2 (en) * 2007-06-12 2011-01-25 Guardian Industries Corp. Rear electrode structure for use in photovoltaic device such as CIGS/CIS photovoltaic device and method of making same
FR2924863B1 (fr) 2007-12-07 2017-06-16 Saint Gobain Perfectionnements apportes a des elements capables de collecter de la lumiere.
JP2010282997A (ja) * 2009-06-02 2010-12-16 Seiko Epson Corp 太陽電池、太陽電池の製造方法
JP5589668B2 (ja) * 2009-08-20 2014-09-17 三菱マテリアル株式会社 サブストレート型薄膜太陽電池の反射電極層及びその製造方法
US9076571B2 (en) * 2009-09-17 2015-07-07 E I Du Pont De Nemours And Company Thick-film conductive compositions with nano-sized zinc additive
US8426241B2 (en) * 2010-09-09 2013-04-23 International Business Machines Corporation Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
JP2012174843A (ja) * 2011-02-21 2012-09-10 Tokyo Electron Ltd 金属薄膜の成膜方法、半導体装置及びその製造方法
JP2012253158A (ja) * 2011-06-01 2012-12-20 Kobe Steel Ltd 化合物半導体薄膜太陽電池用裏面電極および太陽電池、並びに上記裏面電極を製造するためのスパッタリングターゲット
JP5935258B2 (ja) * 2011-08-02 2016-06-15 国立研究開発法人理化学研究所 熱膨張制御金属複合材料およびその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2369635A2 (fr) * 2001-01-31 2011-09-28 Saint-Gobain Glass France Substrat transparent muni d'une électrode
WO2013023161A1 (en) * 2011-08-10 2013-02-14 Ascent Solar Technologies, Inc. Multilayer thin-film back contact system for flexible photovoltaic devices on polymer substrates

Also Published As

Publication number Publication date
US20160064581A1 (en) 2016-03-03
EP2800145B1 (en) 2018-11-21
JP2016517183A (ja) 2016-06-09
KR20160005072A (ko) 2016-01-13
EP2800145A1 (en) 2014-11-05
WO2014177621A1 (en) 2014-11-06
CN105164813A (zh) 2015-12-16

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Granted publication date: 20180525

Termination date: 20190430