CN105161400B - 多晶四阻栅电池片的处理方法及其处理装置 - Google Patents
多晶四阻栅电池片的处理方法及其处理装置 Download PDFInfo
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- CN105161400B CN105161400B CN201510477727.3A CN201510477727A CN105161400B CN 105161400 B CN105161400 B CN 105161400B CN 201510477727 A CN201510477727 A CN 201510477727A CN 105161400 B CN105161400 B CN 105161400B
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- Prior art keywords
- container
- bucket
- fixed
- pipe
- polycrystalline
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- 238000003672 processing method Methods 0.000 title claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 90
- 230000008569 process Effects 0.000 claims abstract description 82
- 230000007246 mechanism Effects 0.000 claims abstract description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 76
- 239000007788 liquid Substances 0.000 claims description 58
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 43
- 239000000243 solution Substances 0.000 claims description 36
- 238000001035 drying Methods 0.000 claims description 29
- 238000003756 stirring Methods 0.000 claims description 29
- 239000008367 deionised water Substances 0.000 claims description 21
- 229910021641 deionized water Inorganic materials 0.000 claims description 21
- 229910052757 nitrogen Inorganic materials 0.000 claims description 21
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000004140 cleaning Methods 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 8
- 230000008676 import Effects 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 4
- 239000007787 solid Substances 0.000 claims description 4
- 239000000356 contaminant Substances 0.000 claims description 3
- 238000002791 soaking Methods 0.000 claims description 3
- 238000002242 deionisation method Methods 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02096—Cleaning only mechanical cleaning
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510477727.3A CN105161400B (zh) | 2015-08-06 | 2015-08-06 | 多晶四阻栅电池片的处理方法及其处理装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510477727.3A CN105161400B (zh) | 2015-08-06 | 2015-08-06 | 多晶四阻栅电池片的处理方法及其处理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105161400A CN105161400A (zh) | 2015-12-16 |
CN105161400B true CN105161400B (zh) | 2018-07-17 |
Family
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Family Applications (1)
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---|---|---|---|
CN201510477727.3A Active CN105161400B (zh) | 2015-08-06 | 2015-08-06 | 多晶四阻栅电池片的处理方法及其处理装置 |
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CN (1) | CN105161400B (zh) |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1833314A (zh) * | 2003-08-07 | 2006-09-13 | 株式会社荏原制作所 | 基片处理装置、基片处理方法和基片固定装置 |
CN101154564A (zh) * | 2006-09-26 | 2008-04-02 | 大日本网目版制造株式会社 | 基板处理装置 |
CN202180065U (zh) * | 2011-07-26 | 2012-04-04 | 韩华新能源(启东)有限公司 | 全自动太阳能硅片扩散前清洗设备 |
CN203437362U (zh) * | 2013-08-26 | 2014-02-19 | 中芯国际集成电路制造(北京)有限公司 | 晶圆清洗装置 |
CN203803852U (zh) * | 2014-01-28 | 2014-09-03 | 包头市山晟新能源有限责任公司 | 厚片硅料的清洗装置 |
CN104300037A (zh) * | 2013-07-18 | 2015-01-21 | 北京中科信电子装备有限公司 | 一种太阳能电池去除死层的方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002252201A (ja) * | 2001-02-26 | 2002-09-06 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
JP5459839B2 (ja) * | 2009-09-18 | 2014-04-02 | 株式会社東芝 | 基板の製造装置及び製造方法 |
JP5731866B2 (ja) * | 2011-03-22 | 2015-06-10 | 株式会社Screenホールディングス | 基板処理装置および基板処理方法 |
-
2015
- 2015-08-06 CN CN201510477727.3A patent/CN105161400B/zh active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1833314A (zh) * | 2003-08-07 | 2006-09-13 | 株式会社荏原制作所 | 基片处理装置、基片处理方法和基片固定装置 |
CN101154564A (zh) * | 2006-09-26 | 2008-04-02 | 大日本网目版制造株式会社 | 基板处理装置 |
CN202180065U (zh) * | 2011-07-26 | 2012-04-04 | 韩华新能源(启东)有限公司 | 全自动太阳能硅片扩散前清洗设备 |
CN104300037A (zh) * | 2013-07-18 | 2015-01-21 | 北京中科信电子装备有限公司 | 一种太阳能电池去除死层的方法 |
CN203437362U (zh) * | 2013-08-26 | 2014-02-19 | 中芯国际集成电路制造(北京)有限公司 | 晶圆清洗装置 |
CN203803852U (zh) * | 2014-01-28 | 2014-09-03 | 包头市山晟新能源有限责任公司 | 厚片硅料的清洗装置 |
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Publication number | Publication date |
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CN105161400A (zh) | 2015-12-16 |
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Address after: 314415, No. 116, Xian Xia Road, Jianshan New District, Jiaxing, Zhejiang, Haining Applicant after: Zhejiang Ruixin dessy energy Polytron Technologies Inc Address before: 314415, No. 116, Xian Xia Road, Jianshan New District, Jiaxing, Zhejiang, Haining Applicant before: ZHEJIANG DESOLAR OPTOELECTRONICS CO., LTD. |
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GR01 | Patent grant | ||
CP03 | "change of name, title or address" |
Address after: No. 116, Xian Xia Road, Jianshan new area, Haining City, Jiaxing, Zhejiang Patentee after: Zhejiang dexirui New Energy Technology Co., Ltd Address before: 314415, No. 116, Xian Xia Road, Jianshan New District, Jiaxing, Zhejiang, Haining Patentee before: ZHEJIANG DESOLAR NEW ENERGY TECHNOLOGY Co.,Ltd. |
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PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: Treatment method and device of polycrystalline four grid cells Effective date of registration: 20201204 Granted publication date: 20180717 Pledgee: Huangwan sub branch of Zhejiang Haining Rural Commercial Bank Co.,Ltd. Pledgor: Zhejiang dexirui New Energy Technology Co., Ltd Registration number: Y2020330001119 |
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