CN104300037A - 一种太阳能电池去除死层的方法 - Google Patents
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Abstract
本发明讲述的是一种太阳能电池制造去除死层的工艺。该新型的制造工艺是在旧的工艺上做了极大的改进。说明书对本工艺进行了详细的说明,并给出具体实施方案。
Description
技术领域
本发明涉及太阳能电池工艺技术领域,特别涉及一种太阳能电池去除扩散死层的方法。
背景技术
目前,晶体硅太阳能电池的发展方向依然是降低成本和提高效率。为了达到这两个目标,研究人员设计了很多种太阳电池结构,如绒面电池,浅结紫电池,背场(BSF)电池,MINP硅电池,激光刻槽埋栅电池,PERL电池等等。这些结构虽然能够有效的提升太阳能电池的效率,但是繁琐的工艺步骤增加了制作成本,降低了生产产能。传统太阳能电池扩散制结会在衬底表面形成一层厚度为10nm的死层,高密度的缺陷和位错存在于这一层死层之中增加载流子的复合,使用湿法处理去除扩散死层能够去除衬底表面的损伤层和符合中心,提升太阳能电池的短路电流和开路电压,从而使电池的转化效率增加。
发明内容
为了解决当前太阳能电池所面临的核心问题,本发明在传统太阳能电池的工艺基础上,使用湿法处理去除扩散死层,以提升太阳能电池的转化效率。
本发明提出传统太阳能电池的工艺基础上,使用湿法处理去除扩散死层包括:对晶体硅衬底材料进行清洗;对所述清洗后的晶体硅衬底材料进行扩散,制备PN结;对所述清洗后的晶体硅衬底材料周边进行等离子刻蚀;对所述刻蚀后的晶体硅衬底材料进行去除表面磷硅玻璃层处理;对所述去除表面磷硅玻璃层处理后的晶体硅衬底材料进行去死层处理。
所述晶体硅衬底材料的清洗是将晶体硅衬底材料浸入到氢酸性混合溶液中,去除所述衬底材料表面的损伤层。
所述对清洗后的晶体硅衬底材料进行扩散,制备PN结是在高温下将所述 晶体硅衬底材料放在扩散炉的石英管内,通入一定比列的反应气体,使生成物在所述清洗后的晶体硅衬底材料上沉积,并向所述所述清洗后的晶体硅衬底材料内部渗透扩散,形成PN结。
所述对清洗后的晶体硅衬底材料周边进行等离子刻蚀是将所述重掺杂处理过的衬底材料置于等离子刻蚀机内进行刻边处理,以避免边缘漏电。
所述对刻蚀后的晶体硅衬底材料进行去除表面磷硅玻璃层处理是将所述处理过的衬底材料置于酸性溶液中进行处理,去除表面在热氧氧化的过程中产生的具有杂质的氧化层。
所述对去除表面磷硅玻璃层处理后的晶体硅衬底材料进行去死层处理是将所述晶体硅材料至于酸性溶液中进行处理,去除表面一层高密度的符合中心和缺陷。
太阳能电池去死层优越性:
工艺步骤简单,只需要在去PSG设备后面多加一个腔室,不影响反应产能,并且能在常规电池的基础上将转换效率提升至少0.2%。
附图说明
下面结合附图和具体实施例对本发明作进一步介绍,但不作为对本发明专利的限定。
图1是湿法处理去除扩散死层的实例流程
具体实施方法:
下面结合附图和实施方式对本发明技术方案做进一步描述。
如图1,下面以多晶硅材料为例介绍本发明用湿法处理去除扩散死层的实例流程。
步骤101,将多晶硅衬底材料置于比例为1∶3∶5的氢氟酸,硝酸和水的混酸溶液中处理200-220秒,反应温度为8℃-10℃,再将使用去离子水清洗之后 的衬底材料置于常温的质量分数为10%的氢氧化钠溶液中60秒,最后使用去离子水进行清洗并烘干,以便去除硅片由于切割过程造成的损伤层。
步骤102,将清洗过的衬底材料置于石英器件内,在825-900℃高温下,向所述石英器件内通入三氯氧磷和氧气,反应生成的磷原子在高温的环境中沉积到衬底材料表面,并在一定的时间内向衬底材料扩散,形成方阻大小为80-90Ω/□的掺杂区域。
步骤103,将形成PN结的衬底材料置于流量比为9∶1的四氟化碳和氧气的混合气体中进行等离子体刻边600-800秒,防止太阳能电池边缘漏电。
步骤104,常温下使用10%氢氟酸溶液清洗硅片200-300秒,之后用去离子水清洗后进行烘干,目的去除表面含有金属杂质和金属氧化物得磷硅玻璃层。
步骤105,将处理过的衬底材料置于10%的亚硝酸钠和2%的氢氟酸溶液中100秒,之后用去离子水清洗后进行烘干,去除扩散死层。
以上所述已对本发明的内容做了详尽说明。对本领域一般技术人员而言,在不背离本发明精神的前提下对它所做的任何显而易见的改动,都构成对本发明专利的侵犯,将承担相应的法律。
Claims (5)
1.如权利要求1所述的将多晶硅衬底材料置于比例为1∶3∶5的氢氟酸、盐酸、DI水混合溶液中。
2.如权利要求2所述的将清洗过的衬底材料置于石英器件内。
3.如权利要求3所述的将形成PN结的衬底材料置于流量比为9∶1的四氟化碳和氧气的混合气体中。
4.如权利要求4所述的常温下使用10%氢氟酸溶液。
5.如权利要求5所述的将处理过的衬底材料置于10%的亚硝酸钠和2%的氢氟酸溶液中。
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105161400A (zh) * | 2015-08-06 | 2015-12-16 | 浙江德西瑞光电科技有限公司 | 多晶四阻栅新型高效电池片的处理方法及其处理装置 |
CN105161399A (zh) * | 2015-08-06 | 2015-12-16 | 浙江德西瑞光电科技有限公司 | 高效彩色多晶太阳能电池片的处理方法及其处理装置 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN105161400A (zh) * | 2015-08-06 | 2015-12-16 | 浙江德西瑞光电科技有限公司 | 多晶四阻栅新型高效电池片的处理方法及其处理装置 |
CN105161399A (zh) * | 2015-08-06 | 2015-12-16 | 浙江德西瑞光电科技有限公司 | 高效彩色多晶太阳能电池片的处理方法及其处理装置 |
CN105161399B (zh) * | 2015-08-06 | 2018-07-17 | 浙江德西瑞新能源科技股份有限公司 | 彩色多晶太阳能电池片的处理方法及其处理装置 |
CN105161400B (zh) * | 2015-08-06 | 2018-07-17 | 浙江德西瑞新能源科技股份有限公司 | 多晶四阻栅电池片的处理方法及其处理装置 |
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