CN105140244A - 阵列基板及其制造方法、显示装置 - Google Patents

阵列基板及其制造方法、显示装置 Download PDF

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CN105140244A
CN105140244A CN201510623616.9A CN201510623616A CN105140244A CN 105140244 A CN105140244 A CN 105140244A CN 201510623616 A CN201510623616 A CN 201510623616A CN 105140244 A CN105140244 A CN 105140244A
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electrode layer
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CN105140244B (zh
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马月
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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    • G02F2202/00—Materials and properties
    • G02F2202/10—Materials and properties semiconductor

Abstract

本发明提供了一种阵列基板，该阵列基板包括基板、依次形成在所述基板上的缓冲层、半导体层、栅绝缘层、栅金属层、源漏金属层、平坦层、间绝缘层、公共电极层、钝化层以及像素电极层，其特征在于，该阵列基板还包括形成于该公共电极层公共信号调节结构，该公共信号调节结构与该公共电极层一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。本发明还提供一种上述的阵列基板及其制造方法、显示装置。本发明所述的阵列基板及其制造方法、显示装置通过公共信号调节结构与现有的公共电极层一并传输公共信号，可有效地降低公共信号传输过程中的阻抗，且使得的公共信号分布不均匀。

Description

阵列基板及其制造方法、显示装置
技术领域
本发明涉及显示技术领域，尤其涉及一种阵列基板及其制备方法、显示装置。
背景技术
随着TFT(ThinFilmTransistor，薄膜晶体管)液晶显示技术的不断发展，具备功耗低、分辨率高、反应速度快以及开口率高等特点的基于LTPS(LowTemperaturePoly-silicon，低温多晶硅)技术的TFT显示装置逐渐成为主流，已被广泛应用于各种电子设备，如液晶电视、智能手机、平板电脑以及数码相机等数字电子设备中。但是，现有LTPSTFT阵列基板大多仅通过公共电极层来传输公共信号，传输过程中电阻较大，且公共信号分布不均匀。
发明内容
本发明提供一种阵列基板及其制造方法、显示装置，其可有效地降低公共信号传输过程中的阻抗，且使得的公共信号分布不均匀。
本发明一方面提供了一种阵列基板，该阵列基板包括基板、依次形成在所述基板上的缓冲层、半导体层、栅绝缘层、栅金属层、源漏金属层、平坦层、间绝缘层、公共电极层、钝化层以及像素电极层，该阵列基板还包括形成于该公共电极层公共信号调节结构，该公共信号调节结构与该公共电极层一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。
其中，所述公共信号调节结构包括形成于该平坦层与公共电极层之间的金属层，该金属层由具有较佳电导率的其他材料形成，且其电阻小于公共电极层。
其中，所述金属层由钼或者铝、铌、钼的合金形成。
其中，所述公共信号调节结构包括形成于公共电极层的第一过孔，并贯穿至该栅金属层，将公共电极层与栅金属层相连。
其中，所述公共信号调节结构包括形成于公共电极层的第二过孔，并贯穿至该源漏金属层，将公共电极层与源漏金属层相连。
本发明还提出一种显示装置，包括如上所述的阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层。
本发明另一方面提供了一种阵列基板制造方法，所述方法包括：
提供一基板，于所述基板上依次形成缓冲层、半导体层、栅绝缘层、栅金属层、源漏金属层、平坦层、间绝缘层、公共电极层、钝化层以及像素电极层；以及
于该公共电极层形成公共信号调节结构，该公共信号调节结构与该公共电极层一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。
其中，该公共信号调节结构为形成于该平坦层与该公共电极层之间的金属层，该金属层由具有较佳电导率的其他材料形成，且其电阻小于公共电极层。
其中，该公共信号调节结构为形成于该公共电极层的第一过孔，该第一过孔贯穿至该栅金属层，将该公共电极层与该栅金属层相连。
其中，该公共信号调节结构为形成于该公共电极层的第二过孔，该第二过孔贯穿至该源漏金属层，将该公共电极层与该源漏金属层相连。
相较于现有技术，本发明所述的阵列基板及其制造方法、显示装置通过公共信号调节结构与现有的公共电极层一并传输公共信号，可有效地降低公共信号传输过程中的阻抗，且使得的公共信号分布不均匀。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本发明第一实施例的阵列基板的截面结构示意图。
图2为本发明第一实施例的阵列基板的金属层的图案的示意图。
图3为本发明第二实施例的阵列基板的截面结构示意图。
图4为本发明第三实施例的阵列基板的截面结构示意图。
图5为本发明较佳实施例的阵列基板的制造方法的流程图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
此外，以下各实施例的说明是参考附加的图示，用以例示本发明可用以实施的特定实施例。本发明中所提到的方向用语，例如，“上”、“下”、“前”、“后”、“左”、“右”、“内”、“外”、“侧面”等，仅是参考附加图式的方向，因此，使用的方向用语是为了更好、更清楚地说明及理解本发明，而不是指示或暗指所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
在本发明的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸地连接，或者一体地连接；可以是机械连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本发明中的具体含义。
此外，在本发明的描述中，除非另有说明，“多个”的含义是两个或两个以上。若本说明书中出现“工序”的用语，其不仅是指独立的工序，在与其它工序无法明确区别时，只要能实现该工序所预期的作用则也包括在本用语中。另外，本说明书中用“～”表示的数值范围是指将“～”前后记载的数值分别作为最小值及最大值包括在内的范围。在附图中，结构相似或相同的单元用相同的标号表示。
请参阅图1，图1为本发明的第一实施例的阵列基板100的截面结构示意图。该阵列基板100可用于显示装置。该阵列基板100包括基板11、依次形成在所述基板上的缓冲层12、半导体层13、栅绝缘层14、栅金属层15、源漏金属层16、平坦层17、间绝缘层18、公共电极层19、钝化层20以及像素电极层21。
该阵列基板10还包括形成于该公共电极层19的公共信号调节结构，该公共信号调节结构与该公共电极层19一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。
在本较佳实施例中，所述公共信号调节结构为形成于该平坦层17与公共电极层19之间的金属层22，该金属层22由具有较佳电导率的其他材料形成，且其电阻小于公共电极层19。优选地，所述金属层22由钼或者铝、铌、钼的合金形成。该金属层22的图案可参阅图2所示。该金属层22与公共电极层19整合为一体，形成公共电极，公共信号通过该金属层22与公共电极层所形成公共电极进行传输后，传输过程中的阻抗被降低，公共信号的延迟也被降低。另外，该金属层22的形成图案和位置对阵列基板10其他结构如孔径、寄生电容等影响较小。同时，来自外界环境的光线可被所述金属层22遮挡显示装置的发光通道(图未示)外，因此，显示装置可获得较佳的性能。
可以理解，基板11与缓冲层12之间还可增设遮光层23，以使得显示装置可获得较佳的显示效果。
请参阅图3，图3为本发明的第二实施例的阵列基板200的截面结构示意图。所述阵列基板200结构与第一实施例中的阵列基板100的结构大致相同，其不同之处仅在于，所述的阵列基板200的公共信号调节结构为形成于公共电极层19的第一过孔24，该第一过孔24贯穿至该栅金属层15，将公共电极层19与栅金属层15相连，整合为一体。公共信号可同时通过该栅金属层15与该公共电极层19进行传输后，公共信号传输过程中的阻抗被降低，公共信号的延迟也被降低。
请参阅图4，图4为本发明的第三实施例的阵列基板300的截面结构示意图。所述阵列基板300结构与第一实施例中的阵列基板100的结构大致相同，其不同之处仅在于，所述的阵列基板300的公共信号调节结构为形成于公共电极层19的第二过孔25，该第二过孔25贯穿至该源漏金属层16，将公共电极层19与源漏金属层16相连，整合为一体。公共信号可同时通过该源漏金属层16与该公共电极层19进行传输，公共信号传输过程中的阻抗被降低，公共信号的延迟也被降低。
本发明还提出一种显示装置，包括如上述实施例所述的阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层。所述阵列基板的具体结构如上述实施例所述，在此不再一一详细描述。
如图5所示，本发明还提出一种阵列基板的制作方法，该方法包括步骤：
步骤S11，提供一基板11，于所述基板11上依次形成缓冲层12、半导体层、栅绝缘层、栅金属层、源漏金属层、平坦层、间绝缘层、公共电极层、钝化层以及像素电极层。
步骤S12，于该公共电极层形成公共信号调节结构，该公共信号调节结构与该公共电极层一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。
其中，在本发明的第一实施例中，该公共信号调节结构为形成于该平坦层17与公共电极层19之间的金属层22，该金属层22由具有较佳电导率的其他材料形成，且其电阻小于公共电极层19。优选地，所述金属层22由钼或者铝、铌、钼的合金形成。该金属层22的图案可参阅图2所示。该金属层22与公共电极层19整合为一体，形成公共电极，公共信号通过该金属层22与公共电极层所形成公共电极进行传输后，传输过程中的阻抗被降低，公共信号的延迟也被降低。另外，该金属层22的形成图案和位置对阵列基板10其他结构如孔径、寄生电容等影响较小。同时，来自外界环境的光线可被所述金属层22遮挡显示装置的发光通道(图未示)外，因此，显示装置可获得较佳的性能。
在本发明的第二实施例中，该公共信号调节结构为形成于公共电极层19的第一过孔24，该第一过孔24贯穿至该栅金属层15，将公共电极层19与栅金属层15相连，整合为一体。公共信号可同时通过该栅金属层15与该公共电极层19进行传输后，公共信号传输过程中的阻抗被降低，公共信号的延迟也被降低。
在本发明的第三实施例中，该公共信号调节结构为形成于公共电极层19的第二过孔25，该第二过孔25贯穿至该源漏金属层16，将公共电极层19与源漏金属层16相连，整合为一体。公共信号可同时通过该源漏金属层16与该公共电极层19进行传输，公共信号传输过程中的阻抗被降低，公共信号的延迟也被降低。
综上所述，本发明实施例所述的阵列基板100、200、300及其制造方法、显示装置通过公共信号调节结构与现有的公共电极层一并传输公共信号，可有效地降低公共信号传输过程中的阻抗，且使得的公共信号分布不均匀。
在本说明书的描述中，参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明的至少一个实施例或示例中。在本说明书中，对上述术语的示意性表述不一定指的是相同的实施例或示例。而且，描述的具体特征、结构、材料或特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所揭露的仅为本发明一种较佳实施例而已，当然不能以此来限定本发明之权利范围，本领域普通技术人员可以理解实现上述实施例的全部或部分流程，并依本发明权利要求所作的等同变化，仍属于发明所涵盖的范围。

Claims (10)

1.一种阵列基板，该阵列基板包括基板、依次形成在所述基板上的缓冲层、半导体层、栅绝缘层、栅金属层、源漏金属层、平坦层、间绝缘层、公共电极层、钝化层以及像素电极层，其特征在于，该阵列基板还包括形成于该公共电极层公共信号调节结构，该公共信号调节结构与该公共电极层一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。
2.如权利要求1所述的阵列基板，其特征在于，所述公共信号调节结构包括形成于该平坦层与公共电极层之间的金属层，该金属层由具有较佳电导率的其他材料形成，且其电阻小于公共电极层。
3.如权利要求2所述的阵列基板，其特征在于，所述金属层由钼或者铝、铌、钼的合金形成。
4.如权利要求1所述的阵列基板，其特征在于，所述公共信号调节结构包括形成于公共电极层的第一过孔，并贯穿至该栅金属层，将公共电极层与栅金属层相连。
5.如权利要求1所述的阵列基板，其特征在于，所述公共信号调节结构包括形成于公共电极层的第二过孔，并贯穿至该源漏金属层，将公共电极层与源漏金属层相连。
6.一种显示装置，其特征在于，该显示装置包括阵列基板、彩膜基板及夹于该阵列基板和该彩膜基板之间的液晶层，该阵列基板为权利要求1至5任一项所述的阵列基板。
7.一种阵列基板制造方法，其特征在于，所述方法包括：
提供一基板，于所述基板上依次形成缓冲层、半导体层、栅绝缘层、栅金属层、源漏金属层、平坦层、间绝缘层、公共电极层、钝化层以及像素电极层；以及
于该公共电极层形成公共信号调节结构，该公共信号调节结构与该公共电极层一并作为公共电极传输公共信号，以降低公共信号传输过程中的阻抗。
8.如权利要求7所述的阵列基板制造方法，其特征在于，该公共信号调节结构为形成于该平坦层与该公共电极层之间的金属层，该金属层由具有较佳电导率的其他材料形成，且其电阻小于公共电极层。
9.如权利要求7所述的阵列基板制造方法，其特征在于，该公共信号调节结构为形成于该公共电极层的第一过孔，该第一过孔贯穿至该栅金属层，将该公共电极层与该栅金属层相连。
10.如权利要求7所述的阵列基板制造方法，其特征在于，该公共信号调节结构为形成于该公共电极层的第二过孔，该第二过孔贯穿至该源漏金属层，将该公共电极层与该源漏金属层相连。
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