CN105138064A - Low differential pressure linear voltage regulator circuit with high bandwidth high power supply ripple inhibition ratio - Google Patents

Low differential pressure linear voltage regulator circuit with high bandwidth high power supply ripple inhibition ratio Download PDF

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CN105138064A
CN105138064A CN201510471333.7A CN201510471333A CN105138064A CN 105138064 A CN105138064 A CN 105138064A CN 201510471333 A CN201510471333 A CN 201510471333A CN 105138064 A CN105138064 A CN 105138064A
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transistor
grid
pmos transistor
drain electrode
electrical connection
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郭建平
陈柳燕
陈弟虎
陈敏
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Sun Yat Sen University
SYSU CMU Shunde International Joint Research Institute
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Sun Yat Sen University
SYSU CMU Shunde International Joint Research Institute
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Abstract

本发明公开一种高带宽高电源纹波抑制比的低压差线性稳压器电路,采用嵌入式的电源纹波前馈技术来提高中低频PSR,采用嵌入式的双零点补偿技术,给PSR的传输函数引入一对中频复极点,提高了中高频PSR,从而实现了宽频率范围下的高PSR。本发明的电路结构简单,芯片面积小,功耗低,只需要10uA的静态电流。

The invention discloses a low-dropout linear voltage regulator circuit with high bandwidth and high power supply ripple rejection ratio. The embedded power supply ripple feedforward technology is used to improve the medium and low frequency PSR. The transfer function introduces a pair of mid-frequency complex poles to improve the mid-high frequency PSR, thereby realizing high PSR in a wide frequency range. The circuit structure of the invention is simple, the chip area is small, the power consumption is low, and only 10uA of static current is needed.

Description

一种高带宽高电源纹波抑制比的低压差线性稳压器电路A Low Dropout Linear Regulator Circuit with High Bandwidth and High Power Supply Ripple Rejection Ratio

技术领域technical field

本发明属于电源管理芯片设计技术领域,具体涉及一种高带宽高电源纹波抑制比的低压差线性稳压器电路。The invention belongs to the technical field of power supply management chip design, in particular to a low-dropout linear voltage regulator circuit with high bandwidth and high power supply ripple rejection ratio.

背景技术Background technique

低压差线性稳压器是电源管理芯片中的一类重要电路,具有输出纹波小、电路结构简单、占用芯片面积小、功耗低、无需电感便于集成等优点,被广泛应用在便携式电子设备、无线能量传输系统等领域中,作为DC-DC、AC-DC等开关电源电路的下一级稳压器,它可以减小输出纹波以获得更为稳定的输出电压。传统的LDO结构如图1所示,包括一个误差放大器、一个电压缓冲级、一个功率管、两个反馈电阻和一个输出电容,它通过电压负反馈实现输出电压的调整。Low-dropout linear regulator is an important circuit in power management chips. It has the advantages of small output ripple, simple circuit structure, small chip area, low power consumption, and easy integration without inductors. It is widely used in portable electronic devices. , wireless energy transmission systems and other fields, as a next-level voltage regulator of DC-DC, AC-DC and other switching power supply circuits, it can reduce the output ripple to obtain a more stable output voltage. The traditional LDO structure is shown in Figure 1, including an error amplifier, a voltage buffer stage, a power transistor, two feedback resistors and an output capacitor, which adjust the output voltage through voltage negative feedback.

稳定的电源电压对于对噪声敏感的模拟电路或射频电路极为重要,因此,LDO的电源纹波抑制比(PSR)至关重要。随着集成电路的快速发展,芯片工作频率也越来越高。为了满足频率越来越高的应用要求,需要设计高带宽高PSR的LDO。A stable power supply voltage is extremely important for noise-sensitive analog circuits or RF circuits, therefore, the power supply ripple rejection ratio (PSR) of the LDO is very important. With the rapid development of integrated circuits, the operating frequency of chips is also getting higher and higher. In order to meet the application requirements of higher and higher frequencies, it is necessary to design an LDO with high bandwidth and high PSR.

对于LDO的PSR改善问题,目前已有很多研究。早在2004年,VishalGupta等提出了一个阻抗分压模型,该模型表明通过增加LDO输入到输出的等效阻抗或者减小输出等效阻抗可以提高PSR。根据这一模型,很多PSR增强技术应运而生。如通过增加功率管堆栈来增加输入到输出的等效阻抗,这实际上是加强了输入输出信号通路的隔离,但这同时会增加LDO的输入输出压降,使LDO转换效率大为下降,还会增加芯片面积。又如通过增加环路增益和环路带宽来减小输出等效阻抗,但这需要设计高增益高带宽的误差放大器,由于环路稳定性问题,很难同时实现高增益和高带宽,而且高带宽需求将增大电路静态功耗。近年来,出现了一种更有效的PSR增强技术:电源纹波前馈。这种技术的核心思想是把电源纹波前馈到功率管栅极,使功率管栅源之间的小信号压差理想情况下为0,从而抑制输入纹波出现在LDO输出端,达到提高PSR的目的。这种方法直接针对电源纹波主路径来消除纹波,结构简单,可以实现低功耗设计,而且对环路零极点分布基本没有影响,因此很多高PSR的LDO都采用了这种技术,但前馈的具体实现方式不同,前馈的效果和电路总体性能也不同。最简单的前馈方法是用二极管连接的MOSFET把电源纹波前馈到功率管栅极,但这种方法由于功率管栅极处的电容较大,前馈带宽受限制,所以只能改善低频PSR。M.El-Nozahi等提出用误差放大器来实现前馈通路,结构如图2所示,该结构可以同时改善中低频PSR,能达到10MHz下仍有-56dB的PSR,但这种电压模式的前馈方法需要一个把前馈信号和反馈信号相加的运算放大器,电路结构比较复杂,消耗较大芯片面积,且需要50uA的静态电流。There have been many studies on the improvement of PSR of LDO. As early as 2004, VishalGupta et al. proposed an impedance divider model, which showed that PSR can be improved by increasing the equivalent impedance from LDO input to output or reducing the output equivalent impedance. According to this model, many PSR enhancement techniques came into being. For example, increasing the equivalent impedance from input to output by increasing the power tube stack, which actually strengthens the isolation of the input and output signal paths, but at the same time will increase the input and output voltage drop of the LDO, which will greatly reduce the conversion efficiency of the LDO. Will increase the chip area. Another example is to reduce the output equivalent impedance by increasing the loop gain and loop bandwidth, but this requires the design of a high-gain and high-bandwidth error amplifier. Due to loop stability issues, it is difficult to achieve high gain and high bandwidth at the same time, and high Bandwidth requirements will increase the static power consumption of the circuit. In recent years, a more effective PSR enhancement technique has emerged: power supply ripple feedforward. The core idea of this technology is to feed forward the power supply ripple to the grid of the power tube, so that the small signal voltage difference between the grid and source of the power tube is ideally 0, thereby suppressing the input ripple from appearing at the output of the LDO and improving Purpose of PSRs. This method directly targets the main path of the power supply ripple to eliminate the ripple. It has a simple structure, can realize low power consumption design, and basically has no effect on the distribution of poles and zeros of the loop. Therefore, many high-PSR LDOs use this technology, but The specific implementation of feedforward is different, and the effect of feedforward and the overall performance of the circuit are also different. The simplest feed-forward method is to use a diode-connected MOSFET to feed the power supply ripple to the gate of the power tube, but this method can only improve the low frequency due to the large capacitance at the gate of the power tube and the limited feed-forward bandwidth. PSR. M.El-Nozahi proposed to use the error amplifier to realize the feed-forward path. The structure is shown in Figure 2. This structure can improve the PSR at the middle and low frequencies at the same time, and can still achieve a PSR of -56dB at 10MHz. However, the front of this voltage mode The feed-forward method requires an operational amplifier that adds the feed-forward signal and the feedback signal. The circuit structure is relatively complex, consumes a large chip area, and requires a quiescent current of 50uA.

发明内容Contents of the invention

本发明的目的是解决现有技术的缺陷,提供一种能实现宽频带范围内的高PSR、功耗低、面积小的低功耗高带宽高电源纹波抑制比的低压差线性稳压器电路,采用的技术方案如下:The purpose of the present invention is to solve the defects of the prior art, to provide a low dropout linear regulator capable of realizing high PSR in a wide frequency band, low power consumption, small area, low power consumption, high bandwidth and high power supply ripple rejection ratio The circuit adopts the following technical scheme:

一种高带宽高电源纹波抑制比的低压差线性稳压器电路,包括误差放大器、二极管接法的负载管Mh、滤波电容Ch、PMOS晶体管M1、PMOS晶体管M2、PMOS晶体管M3、功率管MP、反馈电阻、PMOS晶体管Ms、补偿电阻Rz、补偿电容Cz、输出电容CL和负载电阻RL,所述误差放大器负输入端接基准电压Vref,正输入端接反馈电压Vfb,输出端与PMOS晶体管M1的栅极电连接,所述PMOS晶体管M1的源极分别与PMOS晶体管M2的漏极、功率管MP的栅极和PMOS晶体管Ms的栅极电连接,所述PMOS晶体管M3的漏极分别与PMOS晶体管M2的栅极和二极管接法的负载管Mh的漏极电连接,所述二极管接法的负载管Mh的源极接地,所述反馈电阻、输出电容CL和负载电阻RL分别与功率管MP的漏极和地电连接,所述补偿电阻Rz分别与功率管MP的漏极和PMOS晶体管Ms的漏极电连接,所述补偿电容Cz分别与PMOS晶体管Ms的漏极和误差放大器的正输入端电连接,所述PMOS晶体管M3的栅极接偏置电流Vbias,所述PMOS晶体管Ms、PMOS晶体管MP、PMOS晶体管M2和PMOS晶体管M3的源极均接输入电压,所述滤波电容Ch分别接输入电压和PMOS晶体管M2的栅极。A low-dropout linear voltage regulator circuit with high bandwidth and high power supply ripple rejection ratio, including an error amplifier, a diode-connected load transistor M h , a filter capacitor C h , a PMOS transistor M 1 , a PMOS transistor M 2 , and a PMOS transistor M 3. Power tube M P , feedback resistor, PMOS transistor M s , compensation resistor R z , compensation capacitor C z , output capacitor C L and load resistor R L , the negative input terminal of the error amplifier is connected to the reference voltage V ref , and the positive input The terminal is connected to the feedback voltage V fb , the output terminal is electrically connected to the gate of the PMOS transistor M1, and the source of the PMOS transistor M1 is respectively connected to the drain of the PMOS transistor M2 , the gate of the power transistor MP and the PMOS transistor M The gate of s is electrically connected, and the drain of the PMOS transistor M3 is electrically connected with the gate of the PMOS transistor M2 and the drain of the diode-connected load tube M h respectively, and the diode-connected load tube M h The source of the power transistor is grounded, the feedback resistor, the output capacitor C L and the load resistor R L are electrically connected to the drain of the power transistor MP and ground respectively, and the compensation resistor R z is connected to the drain of the power transistor MP and the PMOS respectively. The drain of the transistor M s is electrically connected, the compensation capacitor C z is electrically connected to the drain of the PMOS transistor M s and the positive input terminal of the error amplifier respectively, the gate of the PMOS transistor M 3 is connected to the bias current V bias , The sources of the PMOS transistor M s , the PMOS transistor MP , the PMOS transistor M 2 and the PMOS transistor M 3 are all connected to the input voltage, and the filter capacitor C h is respectively connected to the input voltage and the gate of the PMOS transistor M 2 .

作为优选,所述反馈电阻包括互相串联的电阻Rf1和Rf2Preferably, the feedback resistor includes resistors R f1 and R f2 connected in series.

作为优选,所述晶体管M1和M2的尺寸满足:当时,式子 PSR E R F F = v o u t ( s ) v i s ( s ) = 1 + g m , p r d s , p [ 1 - H ( s ) ] 1 + β 0 r d s , p [ A ( s ) g m , p + 1 R f 2 ] + r d s , p Z L ( s ) 的分母近似为零,其中gm1为晶体管M1的跨导,gm2为晶体管M2的跨导,rds,p为功率管Mp的沟道电阻,gm,p为功率管Mp的跨导,为反馈系数,为功率管Mp栅极处的小信号电压,Ch为滤波电容,gm,h为二极管接法的负载管Mh的跨导,A(s)为误差放大器的开环传输函数,ZL(s)为LDO的等效输出阻抗,s为复频率。Preferably, the size of the transistors M1 and M2 satisfies: when When, formula PSR E. R f f = v o u t ( the s ) v i the s ( the s ) = 1 + g m , p r d the s , p [ 1 - h ( the s ) ] 1 + β 0 r d the s , p [ A ( the s ) g m , p + 1 R f 2 ] + r d the s , p Z L ( the s ) The denominator of is approximately zero, where g m1 is the transconductance of transistor M 1 , g m2 is the transconductance of transistor M 2 , rds,p is the channel resistance of power transistor M p , and g m,p is the power transistor M p the transconductance, is the feedback coefficient, is the small signal voltage at the gate of the power transistor M p , C h is the filter capacitor, g m,h is the transconductance of the diode-connected load tube M h , A(s) is the open-loop transfer function of the error amplifier, Z L (s) is the equivalent output impedance of the LDO, and s is the complex frequency.

作为优选,所述晶体管Ms的尺寸为MP的1/K。Preferably, the size of the transistor M s is 1/ K of MP.

作为优选,所述误差放大器包括NMOS晶体管M4、M5、M10、M11和M13,还包括PMOS晶体管M6、M7、M8、M9和M12,所述晶体管M4、M5、M10、M11和M13的源极均接地,所述晶体管M4的漏极和M5的栅极均接电流源负极,所述晶体管M6、M7和M12的源极和电流源正极均接输入电压Vin,所述晶体管M4的栅极与M5的栅极电连接,所述晶体管M5的漏极分别与晶体管M6的漏极和栅极、M7的栅极和M12的栅极电连接,所述晶体管M6的栅极还与M7的栅极电连接,所述晶体管M7的漏极分别与M8和M9的源极电连接,所述M8和M9的源极互相电连接,所述晶体管M8的栅极接基准电压,漏极分别与晶体管M10的漏极、栅极和M11的栅极电连接,所述M10的栅极还与M11的栅极电连接,所述晶体管M11的漏极分别与M9的漏极和M13的栅极电连接,所述晶体管M13的漏极与M12的漏极电连接。Preferably, the error amplifier includes NMOS transistors M 4 , M 5 , M 10 , M 11 and M 13 , and also includes PMOS transistors M 6 , M 7 , M 8 , M 9 and M 12 , and the transistors M 4 , The sources of M 5 , M 10 , M 11 and M 13 are all grounded, the drains of the transistor M 4 and the gate of M 5 are connected to the negative pole of the current source, and the sources of the transistors M 6 , M 7 and M 12 Pole and the positive pole of the current source are both connected to the input voltage Vin , the gate of the transistor M4 is electrically connected to the gate of the M5 , and the drain of the transistor M5 is respectively connected to the drain and the gate of the transistor M6 , M 7 gate is electrically connected to the gate of M12, the gate of the transistor M6 is also electrically connected to the gate of M7 , and the drain of the transistor M7 is electrically connected to the source electrodes of M8 and M9 respectively connected, the sources of the M8 and M9 are electrically connected to each other, the gate of the transistor M8 is connected to the reference voltage, and the drain is electrically connected to the drain and the gate of the transistor M10 and the gate of the M11 respectively, The gate of the M 10 is also electrically connected to the gate of the M 11 , the drain of the transistor M 11 is respectively electrically connected to the drain of the M 9 and the gate of the M 13, and the drain of the transistor M 13 is electrically connected to the gate of the M 13 The drain of M12 is electrically connected.

作为优选,所述晶体管M5和M6的栅长设计使得电路满足其中,rds5为晶体管M5的沟道电阻,gm6为晶体管M6的跨导。As a preference, the gate lengths of the transistors M5 and M6 are designed so that the circuit satisfies Among them, rds5 is the channel resistance of transistor M5, and gm6 is the transconductance of transistor M6 .

本发明中,跨导单位为A/V,阻抗的单位为Ω,电容的单位为F。In the present invention, the unit of transconductance is A/V, the unit of impedance is Ω, and the unit of capacitance is F.

与现有技术相比,本发明的有益效果:Compared with prior art, the beneficial effect of the present invention:

1、本发明采用嵌入式的电源纹波前馈技术来提高中低频PSR,嵌入式的电源纹波前馈电路复用了传统结构中的缓冲级,且用高通滤波器来给M2做DC偏置,基本没有额外静态功耗,也基本不增加芯片面积。1. The present invention adopts the embedded power supply ripple feedforward technology to improve the medium and low frequency PSR. The embedded power supply ripple feedforward circuit reuses the buffer stage in the traditional structure, and uses a high-pass filter to do DC for M2 Bias, basically no additional static power consumption, and basically no increase in chip area.

2、采用嵌入式的双零点补偿技术,给PSR的传输函数引入一对中频复极点,改善了中高频PSR。2. Using embedded double zero point compensation technology, a pair of intermediate frequency complex poles are introduced into the PSR transfer function, which improves the medium and high frequency PSR.

3、所采用的嵌入式电源纹波前馈技术基本不对环路零极点分布产生影响,降低了设计难度,可应用于多种LDO拓扑结构中。3. The embedded power supply ripple feed-forward technology basically does not affect the zero-pole distribution of the loop, which reduces the difficulty of design and can be applied to various LDO topologies.

4、结构简单,芯片面积小,功耗低,只需要10uA的静态电流。4. The structure is simple, the chip area is small, the power consumption is low, and only quiescent current of 10uA is required.

附图说明Description of drawings

图1是传统的LDO结构示意图;Figure 1 is a schematic diagram of a traditional LDO structure;

图2是M.El-Nozahi提出的LDO结构示意图;Figure 2 is a schematic diagram of the LDO structure proposed by M.El-Nozahi;

图3是本发明的LDO结构示意图;Fig. 3 is the structural representation of LDO of the present invention;

图4是本发明的误差放大器电路图;Fig. 4 is error amplifier circuit diagram of the present invention;

图5是本发明的LDO的PSR仿真结果图。Fig. 5 is a graph of the PSR simulation result of the LDO of the present invention.

具体实施方式Detailed ways

下面结合附图和实施例对本发明作进一步详细描述。The present invention will be described in further detail below in conjunction with the accompanying drawings and embodiments.

实施例:如图3所示,一种高带宽高电源纹波抑制比的低压差线性稳压器电路,包括误差放大器、二极管接法的负载管Mh、滤波电容Ch、PMOS晶体管M1、PMOS晶体管M2、PMOS晶体管M3、功率管MP、反馈电阻、PMOS晶体管Ms、补偿电阻Rz、补偿电容Cz、输出电容CL和负载电阻RL,所述误差放大器负输入端接基准电压Vref,正输入端接反馈电压Vfb,输出端与PMOS晶体管M1的栅极电连接,所述PMOS晶体管M1的源极分别与PMOS晶体管M2的漏极、功率管MP的栅极和PMOS晶体管Ms的栅极电连接,所述PMOS晶体管M3的漏极分别与PMOS晶体管M2的栅极和二极管接法的负载管Mh的漏极电连接,所述二极管接法的负载管Mh的源极接地,所述反馈电阻、输出电容CL和负载电阻RL分别与功率管MP的漏极和地电连接,所述补偿电阻Rz分别与功率管MP的漏极和PMOS晶体管Ms的漏极电连接,所述补偿电容Cz分别与PMOS晶体管Ms的漏极和误差放大器的正输入端电连接,所述PMOS晶体管M3的栅极接偏置电流Vbias,所述PMOS晶体管Ms、PMOS晶体管MP、PMOS晶体管M2和PMOS晶体管M3的源极均接输入电压,所述滤波电容Ch分别接输入电压和PMOS晶体管M2的栅极。Embodiment: As shown in FIG. 3 , a low-dropout linear voltage regulator circuit with high bandwidth and high power supply ripple rejection ratio includes an error amplifier, a diode-connected load transistor M h , a filter capacitor C h , and a PMOS transistor M 1 , PMOS transistor M 2 , PMOS transistor M 3 , power transistor M P , feedback resistor, PMOS transistor M s , compensation resistor R z , compensation capacitor C z , output capacitor C L and load resistor R L , the negative input of the error amplifier The terminal is connected to the reference voltage V ref , the positive input terminal is connected to the feedback voltage V fb , the output terminal is electrically connected to the gate of the PMOS transistor M 1 , the source of the PMOS transistor M 1 is respectively connected to the drain of the PMOS transistor M 2 and the power transistor The gate of MP is electrically connected to the gate of the PMOS transistor M s , and the drain of the PMOS transistor M 3 is electrically connected to the gate of the PMOS transistor M 2 and the drain of the diode-connected load transistor M h respectively, so The source of the load tube M h in the diode connection method is grounded, the feedback resistor, the output capacitor C L and the load resistor R L are electrically connected to the drain of the power tube MP and the ground respectively, and the compensation resistor R z is connected to the ground respectively. The drain of the power transistor M P is electrically connected to the drain of the PMOS transistor M s , the compensation capacitor C z is electrically connected to the drain of the PMOS transistor M s and the positive input terminal of the error amplifier, respectively, and the PMOS transistor M 3 The gate is connected to the bias current V bias , the sources of the PMOS transistor M s , the PMOS transistor MP , the PMOS transistor M 2 and the PMOS transistor M 3 are all connected to the input voltage, and the filter capacitor C h is connected to the input voltage and the PMOS transistor respectively. Gate of transistor M2 .

所述反馈电阻包括互相串联的电阻Rf1和Rf2The feedback resistors include resistors R f1 and R f2 connected in series.

共漏放大管M1、共栅放大管M2、偏置管M3、二极管接法的负载管Mh和滤波电容Ch组成嵌入式的电源纹波前馈电路,M1为传统LDO的缓冲级,用于提高误差放大器对功率管栅极的驱动能力,并把功率管栅极处的非主极点往高频推;M2为偏置管,为M1提供偏置电流。Common drain amplifier tube M 1 , common grid amplifier tube M 2 , bias tube M 3 , diode-connected load tube M h and filter capacitor C h form an embedded power supply ripple feedforward circuit, and M 1 is the traditional LDO The buffer stage is used to improve the driving ability of the error amplifier to the gate of the power tube, and push the non-dominant pole at the gate of the power tube to high frequency; M2 is a bias tube, which provides bias current for M1.

M1和M2同时执行着图2中的前馈放大器的功能:当M2的栅极电压为交流地时,M2为共栅放大器,把电源纹波信号按一定增益前馈到功率管栅极;由于M1为共漏接法,在M1源极处的等效阻抗为1/gm1,所以从输入到功率管栅极的低频小信号增益为gm2/gm1M 1 and M 2 perform the function of the feedforward amplifier in Figure 2 at the same time: when the gate voltage of M 2 is AC ground, M 2 is a common grid amplifier, which feeds the power supply ripple signal to the power tube with a certain gain Gate: Since M 1 is common-drain connection, the equivalent impedance at the source of M 1 is 1/g m1 , so the low-frequency small signal gain from input to power tube gate is g m2 /g m1 .

M1和M2也同时执行着图2中的加法运算放大器的功能:前馈信号和反馈信号通过电流模式在功率管栅极处相加。M 1 and M 2 also perform the function of the adding operational amplifier in Figure 2 at the same time: the feedforward signal and the feedback signal are summed at the gate of the power tube through the current mode.

从图3中可知,电源纹波前馈电路嵌入在缓冲级中,无需额外的静态功耗。It can be seen from Figure 3 that the power supply ripple feedforward circuit is embedded in the buffer stage without additional static power consumption.

M3和Mh用于为M2提供静态偏置,同时M3、Mh和Ch组成高通滤波器,使M2的栅极电压为交流地。为了使高通滤波器的阻带频率更高,只需要很小的电容即可,节省芯片面积,又不显著增加该节点的延迟。M 3 and M h are used to provide static bias for M 2 , while M 3 , M h and C h form a high-pass filter, so that the gate voltage of M 2 is AC ground. In order to make the stopband frequency of the high-pass filter higher, only a small capacitor is needed, saving chip area without significantly increasing the delay of this node.

根据电路知识可得,整个嵌入式的电源纹波前馈电路的传输函数为:According to circuit knowledge, the transfer function of the entire embedded power supply ripple feedforward circuit is:

Hh (( sthe s )) == vv gg pp vv ii nno ≈≈ gg mm 22 gg mm 11 11 11 ++ sthe s CC hh gg mm hh -- -- -- (( 11 ))

在考虑深亚微米工艺下的功率管的沟道电阻的条件下,加入嵌入式的电源纹波前馈电路的PSR传输函数为:Under the condition of considering the channel resistance of the power tube in the deep submicron process, the PSR transfer function of the embedded power supply ripple feedforward circuit is:

PSRPSR EE. RR Ff Ff == vv oo uu tt (( sthe s )) vv ii nno (( sthe s )) == 11 ++ gg mm ,, pp rr dd sthe s ,, pp [[ 11 -- Hh (( sthe s )) ]] 11 ++ ββ 00 rr dd sthe s ,, pp [[ AA (( sthe s )) gg mm ,, pp ++ 11 RR ff 22 ]] ++ rr dd sthe s ,, pp ZZ LL (( sthe s )) -- -- -- (( 22 ))

其中gm1为晶体管M1的跨导,gm2为晶体管M2的跨导,为反馈系数,A(s)为误差放大器的开环传输函数,ZL(s)为等效输出阻抗。where gm1 is the transconductance of transistor M1, gm2 is the transconductance of transistor M2 , is the feedback coefficient, A(s) is the open-loop transfer function of the error amplifier, and Z L (s) is the equivalent output impedance.

设计晶体管M1和M2的尺寸,使得时,式(2)的分母可以近似为零,即低频PSR理想情况下可以无限小。Design the dimensions of transistors M1 and M2 such that , the denominator of formula (2) can be approximately zero, that is, the low-frequency PSR can be infinitely small under ideal conditions.

可知,与传统结构相比,本发明的低频PSR提高了改善后的低频PSR为:As can be seen, compared with the traditional structure, the low-frequency PSR of the present invention has improved The improved low frequency PSR is:

PSRPSR EE. RR Ff Ff ,, DD. CC == 11 ++ gg mm ,, pp rr dd sthe s ,, pp (( 11 -- gg mm 22 gg mm 11 )) ββ 00 AA 00 gg mm ,, pp rr dd sthe s ,, pp -- -- -- (( 33 ))

功率管MP、采样管MS、补偿电阻RZ、补偿电容CZ、反馈电阻Rf1和Rf2、输出电容CL组成嵌入式的双零点补偿电路。Power tube M P , sampling tube M S , compensation resistor R Z , compensation capacitor C Z , feedback resistors R f1 and R f2 , and output capacitor C L form an embedded double zero point compensation circuit.

MP为功率管,MS为采样管,MS用来采样功率管的电流。本实施例中,MS的尺寸为MP的1/K,由于MP和MS的栅源电压相等,则流过MS的电流为流过MP的电流的1/K。MS采样得到与负载电流相关的电流,再通过补偿电阻Rz和补偿电容Cz注入到反馈电阻网络中。Rf1和Rf2为反馈电阻,CL为输出电容,CL用于设置电路主极点以保证环路稳定性,并把高频纹波耦合到地。可知,整个反馈网络的传输函数为:M P is the power tube, MS is the sampling tube, and M S is used to sample the current of the power tube. In this embodiment, the size of MS is 1/ K of MP , and since the gate-source voltages of MP and MS are equal, the current flowing through MS is 1/ K of the current flowing through MP. M S samples the current related to the load current, and then injects it into the feedback resistor network through the compensation resistor Rz and the compensation capacitor Cz. R f1 and R f2 are the feedback resistors, CL is the output capacitor, and CL is used to set the main pole of the circuit to ensure the stability of the loop and couple the high-frequency ripple to the ground. It can be seen that the transfer function of the entire feedback network is:

ββ (( sthe s )) == vv ff bb vv oo uu tt ≈≈ RR ff 22 RR ff 11 ++ RR ff 22 11 ++ CC zz RR ff 11 sthe s ++ CC LL CC zz RR ff 11 RR zz KK sthe s 22 11 ++ sCsC zz RR ff 11 RR ff 22 RR ff 11 ++ RR ff 22 -- -- -- (( 44 ))

由(4)可知,反馈网络引入了一对零点和一个极点,双零点补偿技术是嵌入在反馈网络中的。From (4) we can see that the feedback network introduces a pair of zeros and a pole, and the double zero compensation technology is embedded in the feedback network.

忽略高频零极点,整个电路的环路增益可近似为:Ignoring the high-frequency pole-zero, the loop gain of the entire circuit can be approximated as:

LL GG (( sthe s )) ≈≈ ββ 00 AA 00 gg mm ,, pp RR LL 11 ++ CC zz RR ff 11 sthe s ++ CC LL CC zz RR ff 11 RR zz KK sthe s 22 (( 11 ++ sCsC LL RR LL )) (( 11 ++ sthe s CC gg pp gg mm 11 )) (( 11 ++ sCsC zz RR ff 11 RR ff 22 RR ff 11 ++ RR ff 22 )) -- -- -- (( 55 ))

传统结构往往用输出电容的等效串联电阻(ESR)引入的零点做补偿,但要把ESR零点设在低频处,需要大的ESR,这一方面会减小高频纹波到地的耦合,影响高频PSR,另一方面还会使得瞬态响应性能变差。本实施例不采用ESR零点补偿的方法来保证环路稳定性,而是用一个小ESR的输出电容,用反馈网络引入的双零点来补偿非主极点。由式(5)可知,环路增益主要有两个零点和三个极点,只要设计合适的K、CZ、RZ使两个零点与两个非主极点相抵消,即相当于一个单极点系统,可以获得足够的相位裕度,保证了环路稳定,并拓宽了环路单位增益频率(UGF)。本实施例所用的嵌入式电源纹波前馈技术基本不对环路零极点分布产生影响,降低了设计难度,可应用于多种LDO拓扑结构中。The traditional structure often uses the zero point introduced by the equivalent series resistance (ESR) of the output capacitor as compensation, but to set the ESR zero point at low frequency, a large ESR is required, which will reduce the coupling of high frequency ripple to ground. Affecting high-frequency PSR, on the other hand, will also make transient response performance worse. In this embodiment, the method of ESR zero point compensation is not used to ensure the stability of the loop, but an output capacitor with a small ESR is used to compensate the non-dominant poles with the double zero points introduced by the feedback network. It can be seen from formula (5) that the loop gain mainly has two zeros and three poles, as long as K, C Z , R Z are designed properly so that the two zeros and two non-dominant poles cancel each other out, it is equivalent to a single pole system, sufficient phase margin can be obtained, the loop is stable, and the loop unity gain frequency (UGF) is widened. The embedded power supply ripple feed-forward technology used in this embodiment basically does not affect the zero-pole distribution of the loop, which reduces the design difficulty and can be applied to various LDO topologies.

双零点补偿技术实际上是通过扩展LDO的环路UGF,达到改善LDO中高频PSR的目的。The double zero point compensation technology actually achieves the purpose of improving the medium and high frequency PSR of the LDO by expanding the loop UGF of the LDO.

本实施例的闭环等效输出阻抗为:The closed-loop equivalent output impedance of this embodiment is:

ZZ oo uu tt (( sthe s )) == RR LL (( RR ff 11 ++ RR ff 22 )) LL GG (( sthe s )) (( RR LL ++ RR ff 11 ++ RR ff 22 )) -- -- -- (( 66 ))

由式(6)可知,反馈网络引入的双零点拓宽了UGF,减缓了中高频环路增益的下降,也就减缓了等效输出阻抗的上升。根据阻抗分压模型,越小的等效输出阻抗意味着越小的PSR,而传统LDO中高频PSR变差是因为环路增益减小之后等效输出阻抗增大了。所以双零点补偿技术可以改善中高频PSR,且对低频PSR没有影响。It can be seen from formula (6) that the double zero points introduced by the feedback network widen the UGF, slow down the decline of the mid-high frequency loop gain, and slow down the rise of the equivalent output impedance. According to the impedance divider model, the smaller the equivalent output impedance means the smaller the PSR, and the deterioration of the high-frequency PSR in the traditional LDO is because the equivalent output impedance increases after the loop gain is reduced. Therefore, the double zero point compensation technology can improve the medium and high frequency PSR, and has no effect on the low frequency PSR.

引入双零点补偿技术的PSR传输函数为:The PSR transfer function of introducing double zero point compensation technology is:

在PSR的传输函数中,零点会使PSR变大,而极点会使PSR减小,即改善PSR。由(7)可以看到,由反馈网络引入的双零点在PSR的传输函数中产生了一对复极点,这对复极点使PSR曲线往下降。设计合适的K、CZ、RZ就能设定这对复极点的位置,即PSR改善的拐点。为了权衡PSR性能和环路稳定性,本实施例的电路中该复极点的位置设置在100kHz左右。In the transfer function of PSR, the zero point will make the PSR larger, and the pole will make the PSR smaller, that is, improve the PSR. It can be seen from (7) that the double zeros introduced by the feedback network produce a pair of complex poles in the transfer function of the PSR, and this pair of complex poles makes the PSR curve descend. Designing appropriate K, C Z , and R Z can set the position of the pair of complex poles, that is, the inflection point of PSR improvement. In order to balance PSR performance and loop stability, the position of the complex pole in the circuit of this embodiment is set at about 100 kHz.

如图4所示,所述误差放大器包括NMOS晶体管M4、M5、M10、M11和M13,还包括PMOS晶体管M6、M7、M8、M9和M12,所述晶体管M4、M5、M10、M11和M13的源极均接地,所述晶体管M4的漏极和M5的栅极均接电流源负极,所述晶体管M6、M7和M12的源极和电流源正极均接输入电压Vin,所述晶体管M4的栅极与M5的栅极电连接,所述晶体管M5的漏极分别与晶体管M6的漏极和栅极、M7的栅极和M12的栅极电连接,所述晶体管M6的栅极还与M7的栅极电连接,所述晶体管M7的漏极分别与M8和M9的源极电连接,所述M8和M9的源极互相电连接,所述晶体管M8的栅极接基准电压,漏极分别与晶体管M10的漏极、栅极和M11的栅极电连接,所述M10的栅极还与M11的栅极电连接,所述晶体管M11的漏极分别与M9的漏极和M13的栅极电连接,所述晶体管M13的漏极与M12的漏极电连接。As shown in FIG. 4 , the error amplifier includes NMOS transistors M 4 , M 5 , M 10 , M 11 and M 13 , and also includes PMOS transistors M 6 , M 7 , M 8 , M 9 and M 12 , and the transistors The sources of M 4 , M 5 , M 10 , M 11 and M 13 are all grounded, the drains of the transistor M 4 and the gates of M 5 are connected to the negative pole of the current source, and the transistors M 6 , M 7 and M The source electrode of I2 and the positive electrode of the current source are both connected to the input voltage V in , the gate of the transistor M4 is electrically connected to the gate of the M5 , and the drain of the transistor M5 is connected to the drain and gate of the transistor M6 respectively. pole, the gate of M7 and the gate of M12 are electrically connected, the gate of the transistor M6 is also electrically connected with the gate of M7 , and the drain of the transistor M7 is respectively connected with the gates of M8 and M9 The sources are electrically connected, the sources of the M8 and M9 are electrically connected to each other, the gate of the transistor M8 is connected to the reference voltage, and the drain is respectively connected to the drain and the gate of the transistor M10 and the gate of the M11 The gate of the M10 is also electrically connected to the gate of the M11 , the drain of the transistor M11 is respectively electrically connected to the drain of the M9 and the gate of the M13 , and the gate of the transistor M13 The drain is electrically connected to the drain of M 12 .

该误差放大器为传统的两级运算放大器结构,M4、M5、M6为偏置管,为运算放大器提供电流偏置。M7、M8、M9、M10、M11为一级放大器,M7为尾电流偏置管,M8和M9为第一级差分输入管,M10和M11为电流镜负载。M12和M13为二级放大器,M12为电流偏置管,M13为第二级共源放大管。The error amplifier is a traditional two-stage operational amplifier structure, and M 4 , M 5 , and M 6 are bias tubes that provide current bias for the operational amplifier. M 7 , M 8 , M 9 , M 10 , and M 11 are first-stage amplifiers, M 7 is a tail current bias tube, M 8 and M 9 are first-stage differential input tubes, and M 10 and M 11 are current mirror loads . M 12 and M 13 are two-stage amplifiers, M 12 is a current bias tube, and M 13 is a second-stage common-source amplifier tube.

所述晶体管M5和M6的栅长设计使得电路满足其中,rds5为晶体管M5的沟道电阻,gm6为晶体管M6的跨导。The gate length design of the transistors M5 and M6 makes the circuit satisfy Among them, rds5 is the channel resistance of transistor M5, and gm6 is the transconductance of transistor M6 .

Claims (6)

1. a low differential voltage linear voltage stabilizer circuit for high bandwidth high PSRR, is characterized in that, comprises the load pipe M of error amplifier, diode-connected h, filter capacitor C h, PMOS transistor M 1, PMOS transistor M 2, PMOS transistor M 3, power tube M p, feedback resistance, PMOS transistor M s, compensating resistance R z, building-out capacitor C z, output capacitance C lwith pull-up resistor R l, described error amplifier negative input termination reference voltage V ref, positive input termination feedback voltage V fb, output terminal and PMOS transistor M 1grid electrical connection, described PMOS transistor M 1source electrode respectively with PMOS transistor M 2drain electrode, power tube M pgrid and PMOS transistor M sgrid electrical connection, described PMOS transistor M 3drain electrode respectively with PMOS transistor M 2grid and the load pipe M of diode-connected hdrain electrode electrical connection, the load pipe M of described diode-connected hsource ground, described feedback resistance, output capacitance C lwith pull-up resistor R lrespectively with power tube M pdrain electrode and ground electrical connection, described compensating resistance R zrespectively with power tube M pdrain electrode and PMOS transistor M sdrain electrode electrical connection, described building-out capacitor C zrespectively with PMOS transistor M sdrain electrode and error amplifier positive input terminal electrical connection, described PMOS transistor M 3grid meet bias current V bias, described PMOS transistor M s, PMOS transistor M p, PMOS transistor M 2with PMOS transistor M 3source electrode all connect input voltage, described filter capacitor C hmeet input voltage and PMOS transistor M respectively 2grid.
2. the low differential voltage linear voltage stabilizer circuit of a kind of high bandwidth high PSRR according to claim 1, is characterized in that, described feedback resistance comprises the resistance R of series connection mutually f1and R f2.
3. the low differential voltage linear voltage stabilizer circuit of a kind of high bandwidth high PSRR according to claim 1, is characterized in that, described transistor M 1and M 2size meet: when time, formula PSR E R F F = v o u t ( s ) v i n ( s ) = 1 + g m , p r d s , p [ 1 - H ( s ) ] 1 + β 0 r d s , p [ A ( s ) g m , p + 1 R f 2 ] + r d s , p Z L ( s ) Denominator be approximately zero, wherein g m1for transistor M 1mutual conductance, g m2for transistor M 2mutual conductance, r ds, pfor power tube M pchannel resistance, g m,pfor power tube M pmutual conductance, for feedback factor, v gpfor power tube M pthe small signal at grid place, C hfor filter capacitor, g mhfor the load pipe M of diode-connected hmutual conductance, the open-loop transmission function that A (s) is error amplifier, Z ls equivalent output impedance that () is LDO.
4. the low differential voltage linear voltage stabilizer circuit of a kind of high bandwidth high PSRR according to claim 1, is characterized in that, described transistor M sbe of a size of M p1/K.
5. the low differential voltage linear voltage stabilizer circuit of a kind of high bandwidth high PSRR according to claim 1, it is characterized in that, described error amplifier comprises nmos pass transistor M 4, M 5, M 10, M 11and M 13, also comprise PMOS transistor M 6, M 7, M 8, M 9and M 12, described transistor M 4, M 5, M 10, M 11and M 13source grounding, described transistor M 4drain electrode and M 5grid all connect current source negative pole, described transistor M 6, M 7and M 12source electrode and current source positive pole all meet input voltage V in, described transistor M 4grid and M 5grid electrical connection, described transistor M 5drain electrode respectively with transistor M 6drain and gate, M 7grid and M 12grid electrical connection, described transistor M 6grid also with M 7grid electrical connection, described transistor M 7drain electrode respectively with M 8and M 9source electrode electrical connection, described M 8and M 9source electrode be electrically connected mutually, described transistor M 8grid connect reference voltage, drain electrode respectively with transistor M 10drain electrode, grid and M 11grid electrical connection, described M 10grid also with M 11grid electrical connection, described transistor M 11drain electrode respectively with M 9drain electrode and M 13grid electrical connection, described transistor M 13drain electrode and M 12drain electrode electrical connection.
6. the low differential voltage linear voltage stabilizer circuit of a kind of high bandwidth high PSRR according to claim 1, is characterized in that, described transistor M 5and M 6the long design of grid make circuit meet wherein, r ds5for transistor M 5channel resistance, g m6for transistor M 6mutual conductance.
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CN107463196A (en) * 2017-08-24 2017-12-12 彭枭雄 A kind of new LDO circuit for improving loop stability
CN108227801A (en) * 2016-12-10 2018-06-29 北京同方微电子有限公司 A kind of low pressure difference linear voltage regulator of high PSRR
CN108334149A (en) * 2018-02-13 2018-07-27 杭州芯元微电子有限公司 A kind of high PSRR low differential voltage linear voltage stabilizer circuits of low quiescent current
CN108427463A (en) * 2018-05-30 2018-08-21 电子科技大学 A kind of LDO of wide input voltage range high PSRR
CN108702091A (en) * 2016-12-30 2018-10-23 华为技术有限公司 A kind of method and terminal of adjustment terminal supplying power efficiency
CN108811230A (en) * 2017-05-05 2018-11-13 朗德万斯公司 LED light for the lamp driver of LED light and for being arranged in florescent lamp fitting
CN109683651A (en) * 2019-03-05 2019-04-26 电子科技大学 A kind of low differential voltage linear voltage stabilizer circuit of high PSRR
CN109782837A (en) * 2018-12-31 2019-05-21 武汉芯动科技有限公司 Stable-pressure device and chip
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US10608524B1 (en) 2018-09-08 2020-03-31 Shenzhen GOODIX Technology Co., Ltd. Ripple detection and cancellation for voltage regulator circuits
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CN111796624A (en) * 2020-07-27 2020-10-20 东南大学 A CMOS Voltage Reference Circuit with Ultra High Power Supply Ripple Rejection Ratio
CN112230701A (en) * 2020-10-06 2021-01-15 青岛天纵通信网络技术有限公司 5G base station power supply
CN112311332A (en) * 2019-08-02 2021-02-02 立锜科技股份有限公司 Signal amplifying circuit with high power supply rejection ratio and driving circuit therein
CN113315089A (en) * 2021-05-27 2021-08-27 晶艺半导体有限公司 High power supply rejection ratio load switch circuit and control method thereof
CN113311895A (en) * 2021-05-27 2021-08-27 二十一世纪(北京)微电子技术有限公司 LDO circuit based on R2R _ VDAC module and electronic equipment
CN114706446A (en) * 2022-04-01 2022-07-05 广州润芯信息技术有限公司 High power supply rejection LDO circuit
CN114967811A (en) * 2022-06-10 2022-08-30 电子科技大学 An LDO without Off-Chip Capacitor to Improve PSR Performance
CN115079765A (en) * 2022-08-23 2022-09-20 上海韬润半导体有限公司 Linear voltage regulator and integrated circuit device including the same
CN115494909A (en) * 2022-09-27 2022-12-20 青岛信芯微电子科技股份有限公司 Zero compensation circuit, chip and display device
CN116225118A (en) * 2023-01-18 2023-06-06 北京工业大学 LDO circuit based on PN complementary current compensation power supply ripple feedforward
CN118860048A (en) * 2024-09-25 2024-10-29 苏州汉天下电子有限公司 Low voltage drop linear regulator circuit and RF module

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CN108227801A (en) * 2016-12-10 2018-06-29 北京同方微电子有限公司 A kind of low pressure difference linear voltage regulator of high PSRR
CN108702091B (en) * 2016-12-30 2020-02-21 华为技术有限公司 Method and terminal for adjusting energy efficiency of terminal power supply
CN108702091A (en) * 2016-12-30 2018-10-23 华为技术有限公司 A kind of method and terminal of adjustment terminal supplying power efficiency
CN108811230A (en) * 2017-05-05 2018-11-13 朗德万斯公司 LED light for the lamp driver of LED light and for being arranged in florescent lamp fitting
CN107463196A (en) * 2017-08-24 2017-12-12 彭枭雄 A kind of new LDO circuit for improving loop stability
CN108334149A (en) * 2018-02-13 2018-07-27 杭州芯元微电子有限公司 A kind of high PSRR low differential voltage linear voltage stabilizer circuits of low quiescent current
CN110413037A (en) * 2018-04-28 2019-11-05 瑞昱半导体股份有限公司 Regulators and Voltage Regulation Methods
CN108427463A (en) * 2018-05-30 2018-08-21 电子科技大学 A kind of LDO of wide input voltage range high PSRR
CN109923776A (en) * 2018-09-08 2019-06-21 深圳市汇顶科技股份有限公司 The ripple of regulator circuit is detected and is offset
CN109923776B (en) * 2018-09-08 2021-01-01 深圳市汇顶科技股份有限公司 Voltage regulator system and method for ripple cancellation of output voltage
US10608524B1 (en) 2018-09-08 2020-03-31 Shenzhen GOODIX Technology Co., Ltd. Ripple detection and cancellation for voltage regulator circuits
CN109782837A (en) * 2018-12-31 2019-05-21 武汉芯动科技有限公司 Stable-pressure device and chip
CN109683651A (en) * 2019-03-05 2019-04-26 电子科技大学 A kind of low differential voltage linear voltage stabilizer circuit of high PSRR
CN109976424B (en) * 2019-04-18 2020-07-31 电子科技大学 Non-capacitor type low dropout linear voltage regulator
CN109976424A (en) * 2019-04-18 2019-07-05 电子科技大学 A kind of non-capacitive low-dropout linear voltage regulator
CN112311332A (en) * 2019-08-02 2021-02-02 立锜科技股份有限公司 Signal amplifying circuit with high power supply rejection ratio and driving circuit therein
CN112311332B (en) * 2019-08-02 2024-05-03 立锜科技股份有限公司 Signal amplifier circuit with high power supply rejection ratio and driving circuit therein
CN110673712A (en) * 2019-09-24 2020-01-10 上海灵动微电子股份有限公司 Power management circuit and method for MCU chip
CN110632972A (en) * 2019-10-11 2019-12-31 华南理工大学 A method and circuit for suppressing LDO output voltage overshoot
CN110632972B (en) * 2019-10-11 2020-05-01 华南理工大学 Method and circuit for suppressing output voltage overshoot of LDO (low dropout regulator)
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CN112230701A (en) * 2020-10-06 2021-01-15 青岛天纵通信网络技术有限公司 5G base station power supply
CN113315089A (en) * 2021-05-27 2021-08-27 晶艺半导体有限公司 High power supply rejection ratio load switch circuit and control method thereof
CN113311895A (en) * 2021-05-27 2021-08-27 二十一世纪(北京)微电子技术有限公司 LDO circuit based on R2R _ VDAC module and electronic equipment
CN114706446A (en) * 2022-04-01 2022-07-05 广州润芯信息技术有限公司 High power supply rejection LDO circuit
CN114706446B (en) * 2022-04-01 2024-08-09 广州润芯信息技术有限公司 High power supply rejection LDO circuit
CN114967811A (en) * 2022-06-10 2022-08-30 电子科技大学 An LDO without Off-Chip Capacitor to Improve PSR Performance
CN114967811B (en) * 2022-06-10 2023-01-10 电子科技大学 A LDO without Off-Chip Capacitor for Improving PSR Performance
CN115079765A (en) * 2022-08-23 2022-09-20 上海韬润半导体有限公司 Linear voltage regulator and integrated circuit device including the same
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CN118860048A (en) * 2024-09-25 2024-10-29 苏州汉天下电子有限公司 Low voltage drop linear regulator circuit and RF module

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