CN105122430B - 用于等离子体蚀刻操作的基板支撑件 - Google Patents

用于等离子体蚀刻操作的基板支撑件 Download PDF

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Publication number
CN105122430B
CN105122430B CN201480012165.9A CN201480012165A CN105122430B CN 105122430 B CN105122430 B CN 105122430B CN 201480012165 A CN201480012165 A CN 201480012165A CN 105122430 B CN105122430 B CN 105122430B
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CN
China
Prior art keywords
substrate support
conductive plate
substrate
top surface
dielectric
Prior art date
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Active
Application number
CN201480012165.9A
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English (en)
Chinese (zh)
Other versions
CN105122430A (zh
Inventor
拉里·弗雷泽
振雄·马修·蔡
约翰·C·福斯特
梅宝·杨
迈克尔·S·杰克逊
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN105122430A publication Critical patent/CN105122430A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Plasma Technology (AREA)
CN201480012165.9A 2013-03-12 2014-02-17 用于等离子体蚀刻操作的基板支撑件 Active CN105122430B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13/798,028 US10593521B2 (en) 2013-03-12 2013-03-12 Substrate support for plasma etch operations
US13/798,028 2013-03-12
PCT/US2014/016719 WO2014163800A1 (en) 2013-03-12 2014-02-17 Substrate support for plasma etch operations

Publications (2)

Publication Number Publication Date
CN105122430A CN105122430A (zh) 2015-12-02
CN105122430B true CN105122430B (zh) 2018-12-21

Family

ID=51522153

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201480012165.9A Active CN105122430B (zh) 2013-03-12 2014-02-17 用于等离子体蚀刻操作的基板支撑件

Country Status (6)

Country Link
US (1) US10593521B2 (https=)
JP (1) JP6391662B2 (https=)
KR (1) KR102232796B1 (https=)
CN (1) CN105122430B (https=)
TW (1) TWI619164B (https=)
WO (1) WO2014163800A1 (https=)

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Publication number Priority date Publication date Assignee Title
US8999105B2 (en) * 2012-01-06 2015-04-07 President And Fellows Of Harvard College Small-scale fabrication systems and methods
US10622243B2 (en) 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
CN110783162B (zh) * 2018-07-30 2024-02-13 Toto株式会社 静电吸盘
JP7373111B2 (ja) * 2018-07-30 2023-11-02 Toto株式会社 静電チャック
JP6641608B1 (ja) * 2018-07-30 2020-02-05 Toto株式会社 静電チャック
JP6587223B1 (ja) * 2018-07-30 2019-10-09 Toto株式会社 静電チャック
US11410867B2 (en) 2018-07-30 2022-08-09 Toto Ltd. Electrostatic chuck
JP7400276B2 (ja) * 2019-09-05 2023-12-19 Toto株式会社 静電チャック
JP7371401B2 (ja) * 2019-09-05 2023-10-31 Toto株式会社 静電チャック
CN117059466A (zh) * 2023-10-13 2023-11-14 江苏邑文微电子科技有限公司 半导体沉积设备
WO2025170929A1 (en) * 2024-02-07 2025-08-14 Applied Materials, Inc. Substrate processing chambers having high conductance hardware

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US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US5716486A (en) * 1994-01-13 1998-02-10 Selwyn; Gary S. Method and apparatus for tuning field for plasma processing using corrected electrode
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US20110073037A1 (en) * 2007-12-28 2011-03-31 Shin-Etsu Handotai Co., Ltd. Epitaxial growth susceptor
CN102160166A (zh) * 2008-09-16 2011-08-17 东京毅力科创株式会社 基板处理装置和基板载置台
CN102731072A (zh) * 2011-03-30 2012-10-17 日本碍子株式会社 静电卡盘的制法及静电卡盘

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JPS6095931A (ja) * 1983-10-31 1985-05-29 Toshiba Mach Co Ltd 静電チヤツク
JPS6369250A (ja) 1986-09-10 1988-03-29 Hitachi Electronics Eng Co Ltd 移動ステ−ジ機構
JPH0758083A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
US5688358A (en) * 1995-03-08 1997-11-18 Applied Materials, Inc. R.F. plasma reactor with larger-than-wafer pedestal conductor
TW334609B (en) * 1996-09-19 1998-06-21 Hitachi Ltd Electrostatic chuck, method and device for processing sanyle use the same
JP3207147B2 (ja) 1997-12-19 2001-09-10 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6228438B1 (en) * 1999-08-10 2001-05-08 Unakis Balzers Aktiengesellschaft Plasma reactor for the treatment of large size substrates
US6693789B2 (en) 2000-04-05 2004-02-17 Sumitomo Osaka Cement Co., Ltd. Susceptor and manufacturing method thereof
JP2001308165A (ja) * 2000-04-19 2001-11-02 Sumitomo Osaka Cement Co Ltd サセプタ及びその製造方法
US6700397B2 (en) 2000-07-13 2004-03-02 The Micromanipulator Company, Inc. Triaxial probe assembly
JP2002134484A (ja) 2000-10-19 2002-05-10 Asm Japan Kk 半導体基板保持装置
US6652713B2 (en) * 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
KR20040049907A (ko) 2002-12-05 2004-06-14 삼성전자주식회사 프리크리닝 장치
US7718930B2 (en) 2003-04-07 2010-05-18 Tokyo Electron Limited Loading table and heat treating apparatus having the loading table
JP4238772B2 (ja) * 2003-05-07 2009-03-18 東京エレクトロン株式会社 載置台構造及び熱処理装置
US7083702B2 (en) * 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
JP5029089B2 (ja) * 2007-03-26 2012-09-19 東京エレクトロン株式会社 プラズマ処理装置用の載置台及びプラズマ処理装置
JP5312923B2 (ja) 2008-01-31 2013-10-09 大日本スクリーン製造株式会社 基板処理装置
US7674723B2 (en) * 2008-02-06 2010-03-09 Applied Materials, Inc. Plasma immersion ion implantation using an electrode with edge-effect suppression by a downwardly curving edge
JP2010021510A (ja) 2008-06-13 2010-01-28 Canon Anelva Corp 基板保持装置およびプラズマ処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4692836A (en) * 1983-10-31 1987-09-08 Toshiba Kikai Kabushiki Kaisha Electrostatic chucks
US5716486A (en) * 1994-01-13 1998-02-10 Selwyn; Gary S. Method and apparatus for tuning field for plasma processing using corrected electrode
US6077353A (en) * 1998-06-02 2000-06-20 Applied Materials, Inc. Pedestal insulator for a pre-clean chamber
US20110073037A1 (en) * 2007-12-28 2011-03-31 Shin-Etsu Handotai Co., Ltd. Epitaxial growth susceptor
CN102160166A (zh) * 2008-09-16 2011-08-17 东京毅力科创株式会社 基板处理装置和基板载置台
CN102731072A (zh) * 2011-03-30 2012-10-17 日本碍子株式会社 静电卡盘的制法及静电卡盘

Also Published As

Publication number Publication date
TW201436034A (zh) 2014-09-16
KR20150129814A (ko) 2015-11-20
JP6391662B2 (ja) 2018-09-19
WO2014163800A1 (en) 2014-10-09
US10593521B2 (en) 2020-03-17
KR102232796B1 (ko) 2021-03-25
TWI619164B (zh) 2018-03-21
JP2016512393A (ja) 2016-04-25
CN105122430A (zh) 2015-12-02
US20140262043A1 (en) 2014-09-18

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