JP5638449B2 - 誘導結合プラズマ処理装置 - Google Patents
誘導結合プラズマ処理装置 Download PDFInfo
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- JP5638449B2 JP5638449B2 JP2011095155A JP2011095155A JP5638449B2 JP 5638449 B2 JP5638449 B2 JP 5638449B2 JP 2011095155 A JP2011095155 A JP 2011095155A JP 2011095155 A JP2011095155 A JP 2011095155A JP 5638449 B2 JP5638449 B2 JP 5638449B2
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- frequency antenna
- dielectric window
- inductively coupled
- plasma processing
- coupled plasma
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
図2Aはこの発明の一実施形態に係る誘導結合プラズマ処理装置が備える誘電体窓部の第1の分割例を示す平面図、図2B、図2Cは図2Aから高周波アンテナを省略した平面図である。
上記誘電体窓部を一辺当たり三分割した際に生ずる、処理室5内に発生する誘導電界が小さくなる、という事情は、誘電体窓部を一辺当たり四分割した際にも生ずる。参考例を図8A、図8Bに示す。
第3の分割例は、第1の分割例から、さらに分割数を上げた例である。
第4の分割例は、誘電体窓部3を一辺当たり三以上に分割する際、誘電体窓部3の中央部分にある全ての金属支持梁7を、高周波アンテナ11と交差するように、金属支持梁7の配置を工夫したものである。
Claims (6)
- 処理室内のプラズマ生成領域に誘導結合プラズマを発生させ、基板をプラズマ処理する誘導結合プラズマ処理装置であって、
前記プラズマ生成領域に前記誘導結合プラズマを発生させる高周波アンテナと、
前記プラズマ生成領域と前記高周波アンテナとの間に配置され、複数の誘電部材と、該複数の誘電部材を支持する導電性梁とを含む矩形状の誘電体窓部を備え、
前記導電性梁が前記誘電体窓部を一辺当たり三以上に分割し、
かつ、前記導電性梁が前記誘電体窓部を一辺当たり三以上に分割したとき、前記誘電体窓部の中央部分に前記高周波アンテナに沿って生じる閉ループ回路が消失されるように、前記誘電体窓部の中央部分において前記高周波アンテナと交差するように配置されていることを特徴とする誘導結合プラズマ処理装置。 - 前記導電性梁が、前記誘電体窓部の中央部分において放射状に延びる放射状部位を有し、前記導電性梁が前記誘電体窓部の中央部分で交差していることを特徴とする請求項1に記載の誘導結合プラズマ処理装置。
- 前記放射状部位は、前記誘電体窓部の対角線に沿っていることを特徴とする請求項2に記載の誘導結合プラズマ処理装置。
- 前記導電性梁が、前記閉ループ回路が消失されるように、前記誘電体窓部の中央部分において途切れるように配置されていることを特徴とする請求項1から請求項3のいずれか一項に記載の誘導結合プラズマ処理装置。
- 前記誘電体窓部の中央部分において、前記導電性梁の全ての辺が、前記高周波アンテナと交差していることを特徴とする請求項1から請求項3のいずれか一項に記載の誘導結合プラズマ処理装置。
- 前記高周波アンテナは、少なくとも第1高周波アンテナとこの第1高周波アンテナの外側にある第2高周波アンテナの2つを含み、
前記閉ループ回路は、前記第1高周波アンテナと前記第2高周波アンテナとの間で、かつ、前記第1の高周波アンテナと前記第2の高周波アンテナに沿って環状に生じるものであることを特徴とする請求項1から請求項5のいずれか一項に記載の誘導結合プラズマ処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011095155A JP5638449B2 (ja) | 2011-04-21 | 2011-04-21 | 誘導結合プラズマ処理装置 |
KR1020120040771A KR101406432B1 (ko) | 2011-04-21 | 2012-04-19 | 유도 결합 플라즈마 처리 장치 |
TW101114159A TWI657720B (zh) | 2011-04-21 | 2012-04-20 | 感應耦合電漿處理裝置 |
CN201210119171.7A CN102751156B (zh) | 2011-04-21 | 2012-04-20 | 电感耦合等离子体处理装置 |
KR1020130132286A KR20130127405A (ko) | 2011-04-21 | 2013-11-01 | 유도 결합 플라즈마 처리 장치 |
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JP2011095155A JP5638449B2 (ja) | 2011-04-21 | 2011-04-21 | 誘導結合プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012227428A JP2012227428A (ja) | 2012-11-15 |
JP5638449B2 true JP5638449B2 (ja) | 2014-12-10 |
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JP2011095155A Active JP5638449B2 (ja) | 2011-04-21 | 2011-04-21 | 誘導結合プラズマ処理装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5638449B2 (ja) |
KR (2) | KR101406432B1 (ja) |
CN (1) | CN102751156B (ja) |
TW (1) | TWI657720B (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101775751B1 (ko) * | 2012-11-14 | 2017-09-06 | 도쿄엘렉트론가부시키가이샤 | 유도 결합 플라즈마 처리 장치 |
CN103996595B (zh) * | 2013-02-18 | 2017-07-04 | 东京毅力科创株式会社 | 电感耦合等离子体处理装置 |
JP6261220B2 (ja) * | 2013-02-18 | 2018-01-17 | 東京エレクトロン株式会社 | 誘導結合プラズマ処理装置 |
KR102020622B1 (ko) * | 2014-09-19 | 2019-09-10 | 주식회사 원익아이피에스 | 유도결합 플라즈마 처리장치 |
KR102458733B1 (ko) * | 2018-01-09 | 2022-10-27 | 삼성디스플레이 주식회사 | 플라즈마 처리 장치 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5589737A (en) * | 1994-12-06 | 1996-12-31 | Lam Research Corporation | Plasma processor for large workpieces |
JP2001110777A (ja) * | 1999-10-05 | 2001-04-20 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及び装置 |
JP3714924B2 (ja) * | 2002-07-11 | 2005-11-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR100719804B1 (ko) * | 2005-08-08 | 2007-05-18 | 주식회사 아이피에스 | 다중 안테나 구조 |
KR20080099046A (ko) * | 2007-05-08 | 2008-11-12 | (주)아이씨디 | 유도 결합형 플라즈마 처리 장치 |
JP4895920B2 (ja) * | 2007-06-08 | 2012-03-14 | パナソニック株式会社 | プラズマ処理装置 |
KR101031784B1 (ko) * | 2008-11-14 | 2011-04-29 | 김남진 | 플라즈마 처리장치 |
-
2011
- 2011-04-21 JP JP2011095155A patent/JP5638449B2/ja active Active
-
2012
- 2012-04-19 KR KR1020120040771A patent/KR101406432B1/ko active IP Right Grant
- 2012-04-20 TW TW101114159A patent/TWI657720B/zh active
- 2012-04-20 CN CN201210119171.7A patent/CN102751156B/zh active Active
-
2013
- 2013-11-01 KR KR1020130132286A patent/KR20130127405A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
JP2012227428A (ja) | 2012-11-15 |
TW201309104A (zh) | 2013-02-16 |
CN102751156B (zh) | 2016-04-27 |
KR20130127405A (ko) | 2013-11-22 |
TWI657720B (zh) | 2019-04-21 |
KR20120120043A (ko) | 2012-11-01 |
CN102751156A (zh) | 2012-10-24 |
KR101406432B1 (ko) | 2014-06-13 |
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