CN105097935B - 具有无掺杂本体块的鳍式场效应晶体管 - Google Patents
具有无掺杂本体块的鳍式场效应晶体管 Download PDFInfo
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- CN105097935B CN105097935B CN201510268708.XA CN201510268708A CN105097935B CN 105097935 B CN105097935 B CN 105097935B CN 201510268708 A CN201510268708 A CN 201510268708A CN 105097935 B CN105097935 B CN 105097935B
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- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462002669P | 2014-05-23 | 2014-05-23 | |
US62/002,669 | 2014-05-23 | ||
US14/529,869 US9312389B2 (en) | 2014-05-23 | 2014-10-31 | FinFET with undoped body bulk |
US14/529,869 | 2014-10-31 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105097935A CN105097935A (zh) | 2015-11-25 |
CN105097935B true CN105097935B (zh) | 2018-05-29 |
Family
ID=53039794
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510268708.XA Active CN105097935B (zh) | 2014-05-23 | 2015-05-22 | 具有无掺杂本体块的鳍式场效应晶体管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9312389B2 (zh) |
EP (1) | EP2947695A1 (zh) |
CN (1) | CN105097935B (zh) |
HK (1) | HK1215101A1 (zh) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10403752B2 (en) | 2014-12-22 | 2019-09-03 | Intel Corporation | Prevention of subchannel leakage current in a semiconductor device with a fin structure |
US9716146B2 (en) | 2015-12-15 | 2017-07-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated circuit structure and method with solid phase diffusion |
WO2018004630A1 (en) * | 2016-06-30 | 2018-01-04 | Intel Corporation | A finfet transistor having a doped subfin structure to reduce channel to substrate leakage |
CN107591328A (zh) * | 2016-07-07 | 2018-01-16 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
US9893189B2 (en) * | 2016-07-13 | 2018-02-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for reducing contact resistance in semiconductor structures |
US10438855B2 (en) | 2017-02-17 | 2019-10-08 | International Business Machines Corporation | Dual channel FinFETs having uniform fin heights |
US10396159B2 (en) * | 2017-10-30 | 2019-08-27 | Avago Technologies International Sales Pte. Limited | FinFET cascode laterally-diffused semiconductor device |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428237A (en) * | 1991-04-26 | 1995-06-27 | Canon Kabushiki Kaisha | Semiconductor device having an insulated gate transistor |
CN1653608A (zh) * | 2002-06-03 | 2005-08-10 | 国际商业机器公司 | 体半导体的鳍状fet器件及其形成方法 |
CN102832236A (zh) * | 2011-06-16 | 2012-12-19 | 台湾积体电路制造股份有限公司 | 应变沟道的场效应晶体管 |
CN103296084A (zh) * | 2012-03-01 | 2013-09-11 | 台湾积体电路制造股份有限公司 | 用于FinFET的装置和方法 |
CN103531477A (zh) * | 2012-07-05 | 2014-01-22 | 台湾积体电路制造股份有限公司 | 具有位于下方的嵌入式抗穿通层的FinFET方法和结构 |
CN103811341A (zh) * | 2012-11-09 | 2014-05-21 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7863674B2 (en) * | 2003-09-24 | 2011-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-gate transistors formed on bulk substrates |
US9136320B2 (en) * | 2013-04-08 | 2015-09-15 | Design Express Limited | Field effect transistor |
US9093531B2 (en) * | 2013-06-11 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of semiconductor device |
US20150076654A1 (en) * | 2013-09-17 | 2015-03-19 | Global Foundries Inc. | Enlarged fin tip profile for fins of a field effect transistor (finfet) device |
-
2014
- 2014-10-31 US US14/529,869 patent/US9312389B2/en active Active
-
2015
- 2015-05-05 EP EP15166341.6A patent/EP2947695A1/en not_active Withdrawn
- 2015-05-22 CN CN201510268708.XA patent/CN105097935B/zh active Active
-
2016
- 2016-03-14 HK HK16102869.6A patent/HK1215101A1/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5428237A (en) * | 1991-04-26 | 1995-06-27 | Canon Kabushiki Kaisha | Semiconductor device having an insulated gate transistor |
CN1653608A (zh) * | 2002-06-03 | 2005-08-10 | 国际商业机器公司 | 体半导体的鳍状fet器件及其形成方法 |
CN102832236A (zh) * | 2011-06-16 | 2012-12-19 | 台湾积体电路制造股份有限公司 | 应变沟道的场效应晶体管 |
CN103296084A (zh) * | 2012-03-01 | 2013-09-11 | 台湾积体电路制造股份有限公司 | 用于FinFET的装置和方法 |
CN103531477A (zh) * | 2012-07-05 | 2014-01-22 | 台湾积体电路制造股份有限公司 | 具有位于下方的嵌入式抗穿通层的FinFET方法和结构 |
CN103811341A (zh) * | 2012-11-09 | 2014-05-21 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9312389B2 (en) | 2016-04-12 |
CN105097935A (zh) | 2015-11-25 |
EP2947695A1 (en) | 2015-11-25 |
US20150340502A1 (en) | 2015-11-26 |
HK1215101A1 (zh) | 2016-08-12 |
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