CN105097794A - ESD protection device and manufacturing method thereof - Google Patents
ESD protection device and manufacturing method thereof Download PDFInfo
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- CN105097794A CN105097794A CN201410172340.2A CN201410172340A CN105097794A CN 105097794 A CN105097794 A CN 105097794A CN 201410172340 A CN201410172340 A CN 201410172340A CN 105097794 A CN105097794 A CN 105097794A
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Abstract
The invention provides an ESD protection device and a manufacturing method thereof. The ESD protection device comprises a capacitor. The capacitor comprises a substrate which is provided with a groove, an insulating dielectric layer which is formed in the groove and has an accommodation groove, a conductive part which is formed in the accommodation groove formed by the insulating dielectric layer. According to the ESD protection device provided by the invention, the area of the capacitor in the ESD protection device is small, and the performance of the ESD protection device is improved.
Description
Technical field
The application relates to field of semiconductor devices, in particular to a kind of ESD protective device and preparation method thereof.
Background technology
Electrostatic is a kind of natural phenomena of objective reality, and the mode of generation has multiple, as contact, friction, appliance chamber induction etc.Electrostatic have gather for a long time, high voltage, low electricity, small area analysis and action time short feature.Electrostatic causes serious harm in multiple field, and triboelectrification and static electricity on human body are that two in electronics industry endangers greatly, usually cause electric equipment products fluctuation of service, even damage.
For electronic product, the destruction of causing during static discharge and damage have abrupt impairment and latent injury two kinds.So-called abrupt impairment, refers to electronic device and is seriously damaged, afunction.This damage can be able to find in quality testing in process of production usually, therefore to the cost keeped in repair of mainly doing over again that factory brings.And latent injury refers to electronic device part and damaged, function is not yet lost, and can not find in the detection of production process, but product can be made in the middle of use to become unstable, bad during fashion, thus larger to product quality formation harm.Therefore, static discharge is considered to the maximum potential killer of Quality of electronic products, and electrostatic defending also becomes the important content that Quality of electronic products controls.
In ESD (Electro-static Driven Comb Electro-Staticdischarge) protective device field, include polytype element, such as Diode (crystal diode), MOSFET (metal-oxide layer semiconductcor field effect transistor Metal-Oxide-SemiconductorField-EffectTransistor) and SCR (silicon controlled rectifier SiliconControlledRectifier).For MOS (metal-oxide semiconductor (MOS) Metal-Oxide-Semiconductor), comprise ggNMOS (grid ground connection N-type metal-oxide semiconductor (MOS) gate-groundedNegativechannel-Metal-Oxide-Semicondutor), gcNMOS (gate coupling N-type metal-oxide semiconductor (MOS) gate-coupledNegativechannel-Metal-Oxide-Semicondutor), rgNMOS (resistance grid N-type metal-oxide semiconductor (MOS) resistorgateNegativechannel-Metal-Oxide-Semicondutor) etc.These electrostatic discharge protection components can be used in circuit design, thus form electrostatic discharge protective circuit, form effective electrostatic defending to electronic device.
In circuit design, esd protection circuit needs to adopt larger area to bear high ESD electric current usually.Now need protective circuit to have higher esd protection rank, have less chip area simultaneously, also, the maximum ESD electric current that can bear in unit are is the bigger the better.
In prior art for the ESD protective device in the esd protection circuit applying gcNMOS; general needs increase an electric capacity between the grid and drain node of gcNMOS; by arranging this electric capacity; make when Electro-static Driven Comb event occurs; grid and voltage couples, and the trigger voltage reducing ESD structure.
But due to the restriction of project organization, capacitor design is on the substrate of ESD protective device, rational height can be restricted, this just makes the integral arrangement of electric capacity very inconvenient, and conductive area is larger, the ESD electric current that can bear in unit are is less, reduces the performance of ESD protective device significantly.
Summary of the invention
The application aims to provide a kind of ESD protective device and preparation method thereof, and the electric capacity in ESD protective device can be made to have less area, improves the performance of ESD protective device.
To achieve these goals, according to an aspect of the application, provide a kind of ESD protective device, comprise electric capacity, electric capacity comprises: substrate, and substrate is formed with groove; Insulating medium layer, is formed in groove, and has holding tank; Conductive part, is formed in holding tank that insulating medium layer formed.
Further, insulating medium layer is SiO2 layer or SiN layer.
Further, conductive part is the polysilicon that ion doping is formed.
Further, the doping content of polysilicon intermediate ion is 10
15to 10
25atoms/cm
3, preferably, the doping content of polysilicon intermediate ion is 10
20atoms/cm
3.
Further, the Doped ions in polysilicon is N-type ion or P type ion.
Further, groove is formed by dry etching or wet etching.
Further, the peripheral sidewalls thickness of insulating medium layer is identical.
Further, the degree of depth of groove is 1 to 5um.
Further, ESD protective device also comprises: source electrode, is formed on substrate; Drain electrode, is formed on substrate; Grid, is formed on substrate, is electrically connected between grid with electric capacity; Source electrode and drain electrode lay respectively at grid both sides.
According to the another aspect of the application, provide a kind of manufacture method of ESD protective device, comprising: step S1: on substrate, form groove; Step S2: form the insulating medium layer with holding tank in groove; Step S3: form conductive part in holding tank.
Further, step S1 comprises: step S11: on substrate, form photoresist; Step S12: photoresist is exposed, and formation process window on a photoresist; Step S13: etch substrate along process window, forms groove; Step S14: remove photoresist.
Further, step S13 is implemented by wet etching or dry etching.
Further, step S2 comprises: step S21: in groove, fill dielectric preparation layers; Step S22: form photoresist in dielectric preparation layers; Step S23: photoresist is exposed, and formation process window on a photoresist; Step S24: be etched to substrate along process window to dielectric preparation layers exposed, forms side wall insulating layer; Step S25: to bottom portion of groove deposited bottom insulating barrier, bottom insulation layer and side wall insulating layer form the insulating medium layer with holding tank.
Further, step S2 comprises: step S21: at the bottom of groove and all sides deposition insulating medium layer, and form holding tank.
Further, the conductive part of filling in step S3 is the polysilicon of Doped ions, and the ion doping concentration of polysilicon is 10
15to 10
25atoms/cm
3, preferably, the doping content of polysilicon intermediate ion is 10
20atoms/cm
3.
Further, the depth of groove in step S1 is 1 to 5um.
The technical scheme of application the application, ESD protective device comprises electric capacity, and this electric capacity comprises: substrate, and substrate is formed with groove; Insulating medium layer, is formed in groove, and has holding tank; Conductive part, is formed in holding tank that insulating medium layer formed.Owing to being formed with groove on substrate, and electric capacity is formed in groove, arranging of electric capacity therefore can be made flexibly convenient.Substrate forms groove, then the insulating medium layer of electric capacity and conductive part are all arranged in this groove, make the height of electric capacity no longer be subject to the restriction in space, when occupying same horizontal plane and being long-pending, the change in depth of vertical direction can be utilized to obtain larger capacitance.In addition, ESD protective device can also adjust the height of electric capacity according to the degree of depth of groove, thus reduce the horizontal area of electric capacity as far as possible, therefore, it is possible to better regulate the current strength of electric capacity in unit horizontal area under identical voltage condition, the electric current that electric capacity in unit level area can be born is large as much as possible, and the trigger voltage of trigger is lower, and the sensitiveness of electric capacity is better, the performance of ESD protective device is better, also can reduce the area of ESD protective device on the whole further.
Accompanying drawing explanation
The accompanying drawing forming a application's part is used to provide further understanding of the present application, and the schematic description and description of the application, for explaining the application, does not form the improper restriction to the application.In the accompanying drawings:
Fig. 1 shows the structural representation of ESD protective device of the prior art;
Fig. 2 to Fig. 6 show according to the ESD protective device of the application be in different step time structure chart; Wherein,
Fig. 2 shows and offers the structural representation after groove according to the ESD protective device of the application;
Fig. 3 shows the structural representation after according to the ESD protective device deposition insulating medium layer of the application;
Fig. 4 shows the structural representation after etching insulating medium layer according to the ESD protective device of the application;
Fig. 5 shows the structural representation after according to the ESD protective device deposited bottom insulating medium layer of the application;
Fig. 6 shows the structural representation after according to the ESD protective device depositing electrically conductive portion of the application;
Fig. 7 shows the application structure schematic diagram of the ESD protective device according to the application;
Fig. 8 shows the production technological process of the ESD protective device according to the application; And
Fig. 9 shows the production technological process of the ESD protective device of a kind of preferred implementation according to the application.
Description of reference numerals: 10, substrate; 20, insulating medium layer; 30, source electrode; 40, drain; 50, grid; 60, conductive part; 11, groove; 12, P trap.
Embodiment
It is noted that following detailed description is all exemplary, be intended to provide further instruction to the application.Unless otherwise, all technology used herein and scientific terminology have the identical meanings usually understood with the application person of an ordinary skill in the technical field.
It should be noted that used term is only to describe embodiment here, and be not intended to the illustrative embodiments of restricted root according to the application.As used herein, unless the context clearly indicates otherwise, otherwise singulative is also intended to comprise plural form, in addition, it is to be further understood that, when use belongs to " comprising " and/or " comprising " in this manual, it indicates existing characteristics, step, operation, device, assembly and/or their combination.
For convenience of description, here can usage space relative terms, as " ... on ", " in ... top ", " at ... upper surface ", " above " etc., be used for the spatial relation described as a device shown in the figure or feature and other devices or feature.Should be understood that, space relative terms is intended to comprise the different azimuth in use or operation except the described in the drawings orientation of device.Such as, " in other devices or structure below " or " under other devices or structure " will be positioned as after if the device in accompanying drawing is squeezed, being then described as the device of " above other devices or structure " or " on other devices or structure ".Thus, exemplary term " in ... top " can comprise " in ... top " and " in ... below " two kinds of orientation.This device also can other different modes location (90-degree rotation or be in other orientation), and relatively describe space used here and make respective explanations.
As can be seen from the structure of the ESD protective device of the prior art shown in Fig. 1, insulating medium layer 20 and the conductive part 60 of electric capacity are formed over the substrate 10, owing to being subject to the structural limitations of ESD protective device, the height of electric capacity is restricted, must remain within certain height, in this case, if make electric capacity have higher capacitance, be merely able to the mode adopting the cross-sectional area increasing electric capacity, highly lower, then the cross-sectional area of electric capacity is larger, also just make the electric current that can bear in unit of capacity area less, therefore the performance of electric capacity can be reduced, electric capacity can be played grid and Electro-static Driven Comb event are occurred time the effect that is coupled of voltage reduce, the trigger voltage of ESD protective device can not be reduced significantly.
In addition, the insulating medium layer 20 of electric capacity and conductive part 60 are formed in substrate 10 end face, will inevitably impact the structure of ESD protective device, due to taking of the insulating medium layer 20 of electric capacity and the installation space of conductive part 60 pairs of substrate 10 upper surfaces, the setting of other structure members certainly will be affected, must be changed according to the setting position of electric capacity, be unfavorable for the integral structure layout of ESD protective device.
And the application be just in order to address this problem, make electric capacity can have more reasonably arrangement, and the integral layout of ESD protective device can not be affected, and the performance of ESD protective device can be improved further.
Now, the illustrative embodiments according to the application is described with reference to the accompanying drawings in more detail.But these illustrative embodiments can be implemented by multiple different form, and should not be interpreted as being only limited to execution mode set forth herein.Should be understood that, there is provided these execution modes be in order to make the application open thorough and complete, and the design of these illustrative embodiments is fully conveyed to those of ordinary skill in the art, in the accompanying drawings, for the sake of clarity, expand the thickness in layer and region, and use the device that identical Reference numeral represents identical, thus will omit description of them.
In order to make those skilled in the art understand the application better, further illustrate ESD protective device and the manufacture method of the application below with reference to accompanying drawing.
In conjunction with shown in Figure 6, according to the ESD protective device of the application, comprise electric capacity, this electric capacity comprises substrate 10, insulating medium layer 20 and conductive part 60, wherein substrate 10 is formed with groove 11; Insulating medium layer 20 is formed in groove 11, and has holding tank, and conductive part 60 is formed in this holding tank.After forming groove 11 over the substrate 10, the space of installing insulating dielectric layer 20 and conductive part 60 can be formed in the groove 11 of substrate 10, insulating medium layer 20 and conductive part 60 all can be contained in the groove 11 of substrate 10, and the upper surface of substrate 10 need not be formed in, therefore space hold when insulating medium layer 20 and conductive part 60 are arranged can be reduced, installation for other parts economizes between clearancen, also can so that the layout of ESD protective device.Because insulating medium layer 20 and conductive part 60 are formed in groove 11 over the substrate 10, therefore the height of insulating medium layer 20 and conductive part 60 only can be subject to the restriction of substrate 10 thickness, and the spatial limitation at substrate 10 top can not be confined to, when forming insulating medium layer 20 and conductive part 60, when identical capacitance values, the height of insulating medium layer 20 and conductive part 60 can be increased, thus the capacity area in reduction horizontal direction, suitable insulating medium layer 20 and conductive part 60 can be built in addition according to the degree of depth of groove 11, make the application of electric capacity in ESD protective device better, reduce the horizontal area of electric capacity on the whole, and then reduce the area of whole ESD protective device.
And by regulating the mode perpendicular to the depth of groove of substrate plane, the capacity area of horizontal direction can be effectively reduced, when the width of substrate 10 is constant, the cross section of electric capacity can be made to reduce, correspondingly, just can improve the current strength that electric capacity can bear in unit are, make the effect of the voltage strengthened when capacitive coupling grid 50 Electro-static Driven Comb event occurs, reduce the trigger voltage of ESD protective device, improve the sensitiveness during work of ESD protective device.
Comprise conductive part 60 due to electric capacity and isolate the insulating medium layer 20 between the inner surface being arranged on conductive part 60 and groove 11, therefore substrate 10 and conductive part 60 are kept apart by this insulating medium layer 20, make to insulate between conductive part 60 and substrate 10, thus form electric capacity.In this application, insulating medium layer 20 can be SiO2 layer or SiN layer, can also be other oxide deposition lining.Conductive part 60 can be polysilicon layer.
As the application one preferred embodiment, the side thickness of insulating medium layer 20 is all identical with bottom thickness.
The doping content of the polysilicon intermediate ion of the application is 10
15to 10
25atoms/cm
3, preferably, the doping content of polysilicon intermediate ion is 10
20atoms/cm
3.
The Doped ions of the polysilicon in the application is can be N-type ion or P type ion.
Groove 11 can be formed by dry etching or wet etching, when etched recesses 11, need to consider the proportionate relationship between the thickness of substrate 10 and the degree of depth of groove 11, to prevent groove 11 processed dark and affect the performance of substrate 10, or it is processed shallow and the effect that the application will reach cannot be reached, preferably, the degree of depth of groove 11 is 1 to 5um.
In conjunction with shown in Figure 7, this ESD protective device can also comprise source electrode 30, drain electrode 40 and grid 50, and wherein source electrode 30 is formed over the substrate 10; Drain electrode 40 is formed over the substrate 10; Grid 50 is formed over the substrate 10, and grid 50 is connected with between electric capacity; Source electrode 30 and drain electrode 40 lay respectively at grid 50 both sides, and are provided with fleet plough groove isolation structure (STI, ShallowTrenchIsolationStructure) in the outside of source electrode and drain electrode 40.Source electrode 30 is connected with power supply, drain electrode 40 is connected with supply power voltage, be connected by circuit with between electric capacity at grid 50, thus, when by using ESD protective device to carry out electrostatic defending work to electronic component etc., just can regulate grid 50 voltage by electric capacity, the trigger voltage of ESD protective device is reduced, improve the sensitivity of ESD protective device, improve the security protection performance of ESD protective device.It can also be seen that in execution mode shown in Fig. 7, the electric capacity of this kind of ESD protective device, source electrode 30, drain electrode 40 and grid 50 are all arranged on P trap substrate, this P trap substrate includes P trap 12, and electric capacity, source electrode 30, drain electrode 40 and grid 50 are all arranged on P trap 12.
Just the manufacture method of the ESD protective device of the application is described in detail by reference to the accompanying drawings below.
Present applicant proposes a kind of manufacture method of new ESD protective device, wherein Fig. 8 shows the basic step flow chart of this manufacture method, and above-mentioned manufacture method comprises: step S1: form groove 11 over the substrate 10; Step S2: form the insulating medium layer 20 with holding tank in described groove; Step S3: form conductive part 60 in described holding tank.In step sl, machined grooves 11 over the substrate 10, its objective is the setting for the ease of carrying out insulating medium layer 20 and conductive part 60, therefore, in the process forming groove 11, need to consider the specification of the electric capacity that will design and the thickness of substrate 10 itself, and select suitable depth of groove accordingly.After selecting suitable depth of groove, according to the specification of the electric capacity of required design, correspondingly can determine the area of electric capacity, complete the subsequent design of electric capacity.In step S2 and S3, the method forming insulating medium layer 20 and conductive part 60 can have multiple.
Above-mentioned several steps are prerequisite basic operational steps in manufacture method, for the manufacturing process of detailed ESD protective device, are illustrated below in conjunction with Fig. 2 to Fig. 6.
First machined grooves 11 over the substrate 10, when machined grooves 11, dry etching or wet etching can be adopted, the application preferably adopts dry etching, specifically, step S1 comprises: form photoresist over the substrate 10 by step S11, injury-free in follow-up dry etching for the protection of substrate 10; Then by step S12, photoresist is exposed, and formation process window on a photoresist, so that control region substrate 10 needing etch; Etched substrate 10 along process window by step S13, form groove 11, the degree of depth of etching is the degree of depth of design; Remove photoresist finally by step S14, form the structure of the substrate 10 with groove 11 shown in Fig. 2.When carrying out dry etching, it should be noted that and will ensure that the proportion between etching depth and substrate 10 thickness is less than 10%, affect the performance of the ESD protective device made to avoid etching depth excessive.In the application, one is preferred embodiment, and etching depth is 1 to 5um.
The preferred plasma etching of above-mentioned dry etching or reactive ion etching.Dry etching preferably adopt be selected from HBr, Cl2, O2, N2, NF3, Ar, He and CF4 composition group in one or more as etching gas.
After the step completing machined grooves 11 on substrate 10, then need to adopt step S2 and S3 to carry out the machine-shaping of insulating medium layer 20.This step S2 comprises: in groove 11, form the insulating medium layer 20 with holding tank; This step S3 comprises: filled conductive portion 60 in holding tank, after the processing of completing steps S2 and S3, forms electric capacity.
After formation has the insulating medium layer 20 of holding tank, just conductive part 60 can be arranged in the holding tank of insulating medium layer 20, conductive part 60 and substrate 10 can be kept apart by insulating medium layer 20, avoid conducting electricity between substrate 10 and conductive part 60.The method being formed the insulating medium layer 20 with holding tank by step S2 can for multiple, sedimentation is such as directly adopted to deposit or grow the insulating medium layer 20 of final band fluted 11, the mode that also can be combined by etching and sedimentary facies realizes the making of the insulating medium layer 20 being with fluted 11, and the application preferably adopts rear a kind of execution mode.
When formation has the insulating medium layer 20 of holding tank, step S2 comprises: in groove 11, fill dielectric preparation layers by step S21, that now fills in whole groove 11 is dielectric preparation layers, as shown in Figure 3, processing in dielectric preparation layers is therefore needed to hold the holding tank of conductive part 60; On insulating medium layer 20, forming photoresist by step S22, not sustaining damage in follow-up dry etching for the protection of not needing the dielectric preparation layers etched; By step S23, photoresist is exposed, and formation process window on a photoresist; Dielectric preparation layers is etched along process window by step S24, exposed to substrate, form side wall insulating layer, specifically shown in Figure 4; Form bottom insulation layer by step S25 to groove 11 bottom deposit, bottom insulation layer and side wall insulating layer form the insulating medium layer with holding tank, specifically shown in Figure 5; Finally remove photoresist, complete the making of the insulating medium layer with holding tank.Because insulating medium layer 20 is not identical with the material of substrate 10, therefore when adopting dry etching to etch insulating medium layer 20, the etching gas different from etched substrate 10 can being selected, etching into substrate 10 to avoid etching gas when etching bottom insulating medium layer 20.After completing the etching to dielectric preparation layers, dielectric preparation layers forms permeable structures, the bottom of the side wall insulating layer that sedimentation therefore can be adopted to be formed after etching dielectric preparation layers deposits, to form the bottom insulation layer of suitable thickness.Above-mentioned deposition process can be chemical vapour deposition (CVD), in order to obtain good deposition shape and effect, and further preferred lower pressure chemical vapour deposition technique or plasma enhanced chemical vapor deposition method.Concrete sedimentary condition those skilled in the art select with reference to prior art, do not repeat them here.
If the mode not adopting dry etching and sedimentation to combine is to form insulating medium layer 20, sedimentation can also be adopted to carry out the final insulating medium layer of straight forming 20, when adopting this kind of method to carry out insulating medium layer 20 shaping, step S21 comprises: at the bottom of groove 11 and all sides deposition dielectric, until dielectric height and structure reach the designing requirement of insulating medium layer 20, now form holding tank in insulating medium layer 20.Now directly in groove 11, can successively generate insulating medium layer 20 by modes such as chemical vapour deposition (CVD)s, first the synchronous insulating barrier generating bottom and both sides, after the height of bottom insulation layer reaches requirement, then start the sedimentary deposit only growing both sides, until the sedimentary deposit height of both sides flushes with the top of substrate 10, form side wall insulating layer, now complete the making of insulating medium layer 20.The material of above-mentioned insulating medium layer 20 can be SiO2 or SiN etc.
After the processing completing insulating medium layer 20, then can inject conductive part 60 by step S3 in the holding tank of insulating medium layer 20, finally form ESD protective device as shown in Figure 6.As a kind of preferred implementation of the application, the conductive part 60 of filling in step S22 is the polysilicon of Doped ions, and polysilicon is created in the holding tank of insulating medium layer 20 by depositional mode, and the doping content of polysilicon intermediate ion is 10
15to 10
25atoms/cm
3, preferably, the doping content of polysilicon intermediate ion is 10
20atoms/cm
3.The type of the Doped ions in polysilicon is P type ion or N-type ion.After polysilicon deposition completes, complete the making of the ESD protective device with electric capacity.The idiographic flow of above-mentioned optimal way is shown in Figure 9.
ESD protective device in the application is particularly useful for gcNMOS.
As can be seen from the above description, the application's the above embodiments achieve following technique effect:
1, space hold when electric capacity is arranged can be reduced, save space, for the layout of other structure of ESD protective device provides installing space.
2, the height of electric capacity can be adjusted according to the degree of depth of groove, thus reduce the horizontal area of electric capacity as far as possible, therefore, it is possible to better regulate the current strength (under identical voltage condition) of electric capacity in unit level area, the electric current that electric capacity in unit level area can be born is large as much as possible, the trigger voltage of trigger is lower, the sensitiveness of electric capacity is better, and the performance of ESD protective device is better.
3, the area of ESD protective device can be reduced on the whole, reduce costs.
The foregoing is only the preferred embodiment of the application, be not limited to the application, for a person skilled in the art, the application can have various modifications and variations.Within all spirit in the application and principle, any amendment done, equivalent replacement, improvement etc., within the protection range that all should be included in the application.
Claims (16)
1. an ESD protective device, comprises electric capacity, it is characterized in that, described electric capacity comprises:
Substrate, described substrate is formed with groove;
Insulating medium layer, is formed in described groove, and has holding tank;
Conductive part, is formed in holding tank that described insulating medium layer formed.
2. ESD protective device according to claim 1, is characterized in that, described insulating medium layer is SiO2 layer or SiN layer.
3. ESD protective device according to claim 1, is characterized in that, described conductive part is the polysilicon that ion doping is formed.
4. ESD protective device according to claim 3, is characterized in that, the doping content of described polysilicon intermediate ion is 10
15to 10
25atoms/cm
3, preferably, the doping content of polysilicon intermediate ion is 10
20atoms/cm
3.
5. ESD protective device according to claim 3, is characterized in that, the Doped ions in described polysilicon is N-type ion or P type ion.
6. ESD protective device according to claim 1, is characterized in that, described groove is formed by dry etching or wet etching.
7. ESD protective device according to claim 2, is characterized in that, the peripheral sidewalls thickness of described insulating medium layer is identical.
8. ESD protective device according to any one of claim 1 to 7, is characterized in that, the degree of depth of described groove is 1 to 5um.
9. ESD protective device according to claim 1, is characterized in that, described ESD protective device also comprises:
Source electrode, is formed over the substrate;
Drain electrode, is formed over the substrate;
Grid, is formed over the substrate, is electrically connected between described grid with described electric capacity;
Described source electrode and described drain electrode lay respectively at described grid both sides.
10. a manufacture method for ESD protective device, is characterized in that, comprising:
Step S1: form groove on substrate;
Step S2: form the insulating medium layer with holding tank in described groove;
Step S3: form conductive part in described holding tank.
The manufacture method of 11. ESD protective devices according to claim 10, it is characterized in that, described step S1 comprises:
Step S11: form photoresist over the substrate;
Step S12: described photoresist is exposed, and on described photoresist formation process window;
Step S13: etch described substrate along described process window, forms described groove;
Step S14: remove described photoresist.
The manufacture method of 12. ESD protective devices according to claim 11, it is characterized in that, described step S13 is implemented by wet etching or dry etching.
The manufacture method of 13. ESD protective devices according to claim 10, it is characterized in that, described step S2 comprises:
Step S21: fill dielectric preparation layers in described groove;
Step S22: form photoresist in described dielectric preparation layers;
Step S23: described photoresist is exposed, and on described photoresist formation process window;
Step S24: be etched to described substrate along described process window to described dielectric preparation layers exposed, forms side wall insulating layer;
Step S25: deposit described bottom insulation layer to described bottom portion of groove, has the insulating medium layer of holding tank described in described bottom insulation layer and side wall insulating layer are formed.
The manufacture method of 14. ESD protective devices according to claim 10, it is characterized in that, described step S2 comprises:
Step S21: at the bottom of described groove and all sides deposition insulating medium layer, and form described holding tank.
The manufacture method of 15. ESD protective devices according to claim 10, is characterized in that, the conductive part of filling in described step S3 is the polysilicon of Doped ions, and the ion doping concentration of described polysilicon is 10
15to 10
25atoms/cm
3, preferably, the doping content of polysilicon intermediate ion is 10
20atoms/cm
3.
The manufacture method of 16. ESD protective devices according to claim 10, is characterized in that, the depth of groove in described step S1 is 1 to 5um.
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| CN107452718B (en) * | 2017-07-14 | 2019-10-29 | 成都华微电子科技有限公司 | The integrated circuit of low antenna effect and the method for reducing integrated circuit antenna effect |
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Application publication date: 20151125 |