CN105097022A - 非挥发性记忆单元以及非挥发性记忆装置 - Google Patents
非挥发性记忆单元以及非挥发性记忆装置 Download PDFInfo
- Publication number
- CN105097022A CN105097022A CN201510270878.1A CN201510270878A CN105097022A CN 105097022 A CN105097022 A CN 105097022A CN 201510270878 A CN201510270878 A CN 201510270878A CN 105097022 A CN105097022 A CN 105097022A
- Authority
- CN
- China
- Prior art keywords
- transistor
- memristor
- line
- memory unit
- nonvolatile memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
Claims (10)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510270878.1A CN105097022B (zh) | 2015-05-25 | 2015-05-25 | 非挥发性记忆单元以及非挥发性记忆装置 |
US14/875,708 US9543006B2 (en) | 2015-05-25 | 2015-10-06 | Non-volatile memory cell and non-volatile memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201510270878.1A CN105097022B (zh) | 2015-05-25 | 2015-05-25 | 非挥发性记忆单元以及非挥发性记忆装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN105097022A true CN105097022A (zh) | 2015-11-25 |
CN105097022B CN105097022B (zh) | 2017-12-08 |
Family
ID=54577281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201510270878.1A Active CN105097022B (zh) | 2015-05-25 | 2015-05-25 | 非挥发性记忆单元以及非挥发性记忆装置 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9543006B2 (zh) |
CN (1) | CN105097022B (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105634446A (zh) * | 2016-01-27 | 2016-06-01 | 华中科技大学 | 一种基于忆阻器的非易失性sr触发器电路 |
CN108829977A (zh) * | 2018-06-20 | 2018-11-16 | 南京邮电大学 | 一种忆阻器电压信号电路及其产生忆阻器多路不同电压信号的方法 |
GB2560850B (en) * | 2015-12-22 | 2020-11-25 | Advanced Risc Mach Ltd | Latching device and method |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7916544B2 (en) * | 2008-01-25 | 2011-03-29 | Micron Technology, Inc. | Random telegraph signal noise reduction scheme for semiconductor memories |
CN109427388B (zh) | 2017-09-04 | 2020-09-25 | 华为技术有限公司 | 一种存储单元和静态随机存储器 |
DE102018213147A1 (de) * | 2018-08-07 | 2020-02-13 | Robert Bosch Gmbh | Auffrischen von mittels Memristoren gespeicherten Daten |
EP3826017B1 (en) | 2019-11-22 | 2024-01-24 | Imec VZW | Non-volatile sram device |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090109734A1 (en) * | 2007-10-26 | 2009-04-30 | Micron Technology, Inc. | Non-volatile sram cell |
US7796417B1 (en) * | 2008-04-14 | 2010-09-14 | Altera Corporation | Memory circuits having programmable non-volatile resistors |
CN102122528A (zh) * | 2009-10-12 | 2011-07-13 | 恒忆公司 | 将相变存储器并入cmos工艺的非易失性sram单元 |
US20130135918A1 (en) * | 2011-11-30 | 2013-05-30 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI282092B (en) | 2002-06-28 | 2007-06-01 | Brilliance Semiconductor Inc | Nonvolatile static random access memory cell |
KR100479810B1 (ko) * | 2002-12-30 | 2005-03-31 | 주식회사 하이닉스반도체 | 불휘발성 메모리 장치 |
TWI441185B (zh) * | 2010-05-12 | 2014-06-11 | Ind Tech Res Inst | 非揮發性靜態隨機存取記憶體及其操作方法 |
TWI429062B (zh) * | 2011-06-15 | 2014-03-01 | Ind Tech Res Inst | 非揮發性靜態隨機存取式記憶胞以及記憶體電路 |
US8929136B2 (en) | 2012-10-26 | 2015-01-06 | Aplus Flash Technology, Inc. | 8T NVSRAM cell and cell operations |
-
2015
- 2015-05-25 CN CN201510270878.1A patent/CN105097022B/zh active Active
- 2015-10-06 US US14/875,708 patent/US9543006B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20090109734A1 (en) * | 2007-10-26 | 2009-04-30 | Micron Technology, Inc. | Non-volatile sram cell |
US7796417B1 (en) * | 2008-04-14 | 2010-09-14 | Altera Corporation | Memory circuits having programmable non-volatile resistors |
CN102122528A (zh) * | 2009-10-12 | 2011-07-13 | 恒忆公司 | 将相变存储器并入cmos工艺的非易失性sram单元 |
US20130135918A1 (en) * | 2011-11-30 | 2013-05-30 | Kabushiki Kaisha Toshiba | Semiconductor memory device |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2560850B (en) * | 2015-12-22 | 2020-11-25 | Advanced Risc Mach Ltd | Latching device and method |
CN105634446A (zh) * | 2016-01-27 | 2016-06-01 | 华中科技大学 | 一种基于忆阻器的非易失性sr触发器电路 |
CN108829977A (zh) * | 2018-06-20 | 2018-11-16 | 南京邮电大学 | 一种忆阻器电压信号电路及其产生忆阻器多路不同电压信号的方法 |
Also Published As
Publication number | Publication date |
---|---|
US20160351257A1 (en) | 2016-12-01 |
CN105097022B (zh) | 2017-12-08 |
US9543006B2 (en) | 2017-01-10 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20170628 Address after: No. 188 East Huaihe Road, Huaiyin District, Jiangsu, Huaian Applicant after: Jiangsu times all core storage technology Co.,Ltd. Applicant after: BEING ADVANCED MEMORY TAIWAN LIMITED Address before: 315195 Zhejiang city of Ningbo province Yinzhou Industrial Park (New Yinzhou District Jiang Shan Zhen Zhang Yu Cun) Applicant before: NINGBO ADVANCED MEMORY TECHNOLOGY Corp. Applicant before: BEING ADVANCED MEMORY TAIWAN LIMITED |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: No. 601, Changjiang East Road, Huaiyin District, Huaian, Jiangsu Co-patentee after: BEING ADVANCED MEMORY TAIWAN LIMITED Patentee after: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Address before: 223001 No. 188 Huaihe East Road, Huaiyin District, Huaian City, Jiangsu Province Co-patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED Patentee before: Jiangsu times all core storage technology Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221024 Address after: 802, unit 4, floor 8, building 2, yard 9, FengHao East Road, Haidian District, Beijing Patentee after: Beijing times full core storage technology Co.,Ltd. Address before: 223001 No. 601, Changjiang East Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: JIANGSU ADVANCED MEMORY TECHNOLOGY Co.,Ltd. Patentee before: BEING ADVANCED MEMORY TAIWAN LIMITED |