CN105092117B - A kind of piezoresistive pressure sensor and preparation method thereof - Google Patents
A kind of piezoresistive pressure sensor and preparation method thereof Download PDFInfo
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Abstract
The invention discloses a kind of piezoresistive pressure sensor and preparation method thereof, the pressure sensor includes LCP substrates, LCP film layers, metal electrode, graphene film layer and graphene array layer；LCP film layers are fixedly connected on LCP substrates, the through hole of array architecture is provided with LCP film layers, metal electrode is connected to the top at LCP film layers two ends, and graphene film layer is connected in LCP film layers, and the space between graphene film layer filling metal electrode and covering metal electrode；Graphene array layer is filled in the through hole of LCP films, and graphene film layer and graphene array layer connection.The pressure sensor is not only provided with the bending deformed advantage of substrate, also with good sensitivity, can be widely used in the fields such as biomedicine, wearable device.
Description
Technical field
The present invention relates to a kind of pressure sensor, it particularly relates to a kind of piezoresistive pressure sensor and its preparation side
Method.
Background technology
Traditional silicon substrate pressure sensor is due to the characteristics of its substrate inflexibility deforms, causing it in crowds such as biomedicines
Multi-field use is few.Meanwhile, bending deformed flexible substrate pressure sensor is all badly in need of for making in many fields
With.The structure of existing silicon substrate piezoresistive pressure sensor is by diffusion on a square or circular silicon strain film
Or the mode of ion implanting makes four presser sensor resistance in area of stress concentration, four resistance interconnections constitute Hui Sidun electricity
Bridge.Cause the resistance change of four presser sensor resistance to be converted to output voltage ambient pressure by resistance bridge, lead to
Cross carries out demarcating the measurement that can be realized to pressure to output voltage and pressure value.But the silicon substrate pressure drag type pressure of this structure
Sensor is non-flexible due to it, and bio-compatibility is bad, causes many fields such as biomedicine, wearable device all anxious
Need the use of pressure sensor.
The content of the invention
Technical problem：The technical problems to be solved by the invention are：A kind of piezoresistive pressure sensor and its preparation are provided
Method, the pressure sensor is not only provided with the bending deformed advantage of substrate, also with good sensitivity, can make extensively
For fields such as biomedicine, wearable devices.
Technical scheme：In order to solve the above technical problems, the technical scheme that the embodiment of the present invention is used is：
A kind of piezoresistive pressure sensor, the pressure sensor includes LCP substrates, LCP film layers, metal electrode, graphite
Alkene film layer and graphene array layer；LCP film layers are fixedly connected on LCP substrates, and array architecture is provided with LCP film layers
Through hole, metal electrode is connected to the top at LCP film layers two ends, and graphene film layer is connected in LCP film layers, and graphite
Space and covering metal electrode between alkene film layer filling metal electrode；Graphene array layer is filled in the through hole of LCP films
In, and graphene film layer and graphene array layer connection.
Preferably, described LCP film layers are made up the through hole of array architecture of laser boring.
Preferably, described metal electrode is gold, silver, copper, aluminium, platinum or titanium.
Preferably, the through hole thickness in described LCP film layers is 25~50 microns.
A kind of preparation method of piezoresistive pressure sensor, the preparation method is comprised the following steps：
The first step：The LCP film layers of thin metal layer are covered with to one side carries out laser boring, forming array formula structure it is logical
Hole；
Second step：LCP film layers and LCP substrates are bonded using laminate patch hot pressing；
3rd step：Photoresist layer is coated at the two ends of the LCP film layers for being covered with thin metal layer；
4th step：Thin metal layer to not being photo-etched glue-line covering corrodes；
5th step：Removal photoresist layer, forms metal electrode；
6th step：Graphene array layer is filled in the through hole of LCP films, it is thin that graphene film layer is connected into LCP
In film layer, and the space between graphene film layer filling metal electrode and covering metal electrode, so as to be made pressure sensor.
Preferably, the 6th described step is specifically included：To metal electrode upper surface sticking cloth, then to LCP
Graphene oxide layer in the adhesive plaster spin coating of film layer and metal electrode and its surface mount, LCP is thin for graphene oxide layer filling
The space between through hole and metal electrode in film layer, and covering metal electrode and adhesive plaster, then tear the glue on metal electrode
Cloth, is finally heated, and graphene oxide layer reduction turns into positioned at the graphene array layer in LCP film through holes and be located at
Graphene film layer above LCP films, so as to be made pressure sensor.
Preferably, in described graphene oxide layer reduction process, temperature is less than LCP film layers and LCP substrates
Melt temperature.
Preferably, in described graphene oxide layer reduction process, with nitrogen as protection gas.
Preferably, the through hole thickness in described LCP film layers is 25~50 microns.
Beneficial effect：Compared with existing silicon substrate piezoresistive pressure sensor, the invention has the advantages that：Utilize
Flexible material LCP is made substrate, so that the flexible deformation of pressure sensor substrate.The force sensing resistance element of pressure sensor
It is graphene film layer and the graphene array layer in array structure.The flexural deformation in the presence of external force when pressure sensor
When, graphene film layer meeting deformation therewith so that graphene film layer resistance increase, while the stone in LCP film layers
Black alkene array layer can occur certain compression on longitudinal thickness, increase the asymmetry of carbon atom in Graphene, and then lead
The energy gap increase of Graphene is caused, the energy state density reduction, transmission raceway groove near fermi level are reduced so that the biography of Graphene
Defeated coefficient reduction, resistivity increase, resistance also increases therewith.Carried significantly by setting graphene film layer and graphene array layer
The sensitivity of pressure sensor high.The pressure sensor of the present embodiment, because pressure sensor is in the feelings of substrate flexural deformation
Work is still can be very good under condition, the defect of traditional silicon substrate piezoresistive pressure sensor inflexibility deformation is compensate for, and
The pressure sensor structure of array causes that the sensitivity of pressure sensor is greatly improved, and can be widely used in biology
The field such as medical science and wearable device.
Brief description of the drawings
Fig. 1 is the structure sectional view of the embodiment of the present invention.
Fig. 2 is the structural representation of the preparation method first step in the embodiment of the present invention.
Fig. 3 is the structural representation of preparation method second step in the embodiment of the present invention.
Fig. 4 is the structural representation of the step of preparation method the 3rd in the embodiment of the present invention.
Fig. 5 is the structural representation of the step of preparation method the 4th in the embodiment of the present invention.
Fig. 6 is the structural representation of the step of preparation method the 5th in the embodiment of the present invention.
Fig. 7 is the structural representation of S601 in the step of preparation method the 6th in the embodiment of the present invention.
Fig. 8 is the structural representation of S602 in the step of preparation method the 6th in the embodiment of the present invention.
Fig. 9 is the structural representation of S603 in the step of preparation method the 6th in the embodiment of the present invention.
Figure 10 is the structural representation of S604 in the step of preparation method the 6th in the embodiment of the present invention.
Have in figure：LCP substrates 1, LCP film layers 2, metal electrode 3, graphene film layer 4, photoresist layer 5, thin metal layer
6th, graphene array layer 7, graphene oxide layer 8, adhesive plaster 9.
Specific embodiment
Below in conjunction with the accompanying drawings, the technical scheme to the embodiment of the present invention is described in detail.
As shown in figure 1, a kind of piezoresistive pressure sensor of the embodiment of the present invention, including LCP substrates 1, LCP film layers 2,
Metal electrode 3, graphene film layer 4 and graphene array layer 7.LCP film layers 2 are fixedly connected on LCP substrates 1, LCP films
The through hole of array architecture is provided with layer 2, metal electrode 3 is connected to the top at the two ends of LCP film layers 2.Graphene film layer 4 connects
It is connected in LCP film layers 2, and graphene film layer 4 fills space and the covering metal electrode 3 between metal electrode 3.Graphene
Array layer 7 is filled in the through hole of LCP films 2, and graphene film layer 4 and graphene array layer 7 are connected.
Polymeric liquid crystal copolymer（Abbreviation LCP in text）Be it is a kind of it is being made up of rigid molecule chain, in certain physical condition
Under existing liquid mobility have again crystal physical property anisotropy (this state is referred to as liquid crystal state) polymer substance.
Polymeric liquid crystal copolymer has the advantages that many uniquenesses, for example, be lost that small, low cost, frequency of use scope are big, intensity is high, weight
Amount is light, heat resistance and anti-flammability are strong, linear expansion coefficient is small, corrosion resistance and radiation resistance is good, CP films forming temperature
Low, the excellent moulding processability with flexible and foldability can be used for the complicated shapes such as various band arcs and bending
Product.This has fully met requirement of the bending deformed pressure sensor of substrate to substrate.Due to LCP pliability very
It is good, Young's modulus between 5 ~ 20Gpa, well below monocrystalline silicon and polysilicon.In the presence of uniform pressure, LCP substrates 1
Bending Deformation can be bigger, causes the deformation of graphene film layer 4 thereon also bigger.So also having increasing as substrate using LCP
The effect of big sensitivity.In addition, employ LCP materials just to allow to make two array knots of substrate and force sensing resistance element
Structure, so that the sensitivity of sensor is greatly improved.
The course of work of the piezoresistive pressure sensor of said structure is：When pressure sensor bends in the presence of external force
When deformation, the meeting deformation therewith of graphene film layer 4 so that the resistance increase of graphene film layer 4, while LCP film layers 2
In graphene array layer 7 can certain compression occur on longitudinal thickness, increase the asymmetry of carbon atom in Graphene,
And then causing the energy gap of Graphene to increase, the energy state density reduction, transmission raceway groove near fermi level are reduced so that graphite
The transmission coefficient reduction of alkene, resistivity increase, resistance also increases therewith.Graphite in graphene film 4 and LCP of layer film layers 2
The resistance variations of alkene array layer 7 can be measured then to reach the purpose of the value for measuring external pressure by metal electrode 3.
In the piezoresistive pressure sensor of the structure, in LCP film layers 2 be provided with array architecture through hole, be for
Composition graphene array layer 7.The force sensing resistance element of sensor is made up of two parts, is respectively graphene array layer 7 and stone
Black alkene film layer 4.Force sensing resistance element in the structure can improve the sensitivity of sensor.When ambient pressure acts on pressure
During sensor, graphene film layer 4 bends deformation, causes its resistance also to increase therewith.When ambient pressure acts on pressure
During sensor, graphene array in LCP film layers 2 layer 7 compresses on longitudinal thickness, makes the non-of carbon atom in Graphene
Symmetry increases, and then causes the energy gap of Graphene to increase, and the energy state density reduction, transmission raceway groove near fermi level subtract
It is few so that the transmission coefficient reduction of Graphene, resistivity increase, resistance also increases therewith.So, force sensing resistance element is constituted
Graphene array layer 7 and graphene film layer 4 are used in combination, and substantially increase the sensitivity of sensor.
In the piezoresistive pressure sensor of the structure, the through hole of distribution array formula structure in LCP film layers 2, Graphene battle array
Row layer 7 is located in the through hole of LCP film layers 2, and the two array architectures link together, and constitutes the array knot of sensor
Structure.Graphene array layer 7 in the through hole of array architecture links together with graphene film layer 4, contributes to Graphene thin
Film layer 4 preferably adheres to each other with LCP film layers 2, it is not easy to come off.
Preferably, described LCP film layers 2 are made up the through hole of array architecture of laser boring.LCP films
Through hole thickness in layer 2 is 25~50 microns.Because the thickness of through hole is micron order, so using laser boring, being made array
The through hole of formula structure.
Preferably, described metal electrode 3 is gold, silver, copper, aluminium, platinum or titanium.Certainly, other metals also may be used
As metal electrode.
A kind of preparation method of above-mentioned piezoresistive pressure sensor, the preparation method is comprised the following steps：
The first step：As shown in Fig. 2 the LCP film layers 2 that thin metal layer 6 is covered with to one side carry out laser boring, forming array
The through hole of formula structure；Through hole thickness is 25~50 microns.
Second step：As shown in figure 3, LCP film layers 2 are bonded with LCP substrates 1 using laminate patch hot pressing.
3rd step：As shown in figure 4, coating photoresist layer 5 at the two ends of the LCP film layers 2 for being covered with thin metal layer 6.
4th step：As shown in figure 5, the thin metal layer 6 to not being photo-etched the covering of glue-line 5 corrodes.
5th step：As shown in fig. 6, removal photoresist layer 5, forms metal electrode 3.
6th step：Graphene array layer 7 is filled in the through hole of LCP films 2, graphene film layer 4 is connected to LCP
In film layer 2, and graphene film layer 4 fills space and the covering metal electrode 3 between metal electrode 3, so as to be made pressure
Sensor.
6th step specifically includes procedure below：
S601 is as shown in fig. 7, to the upper surface sticking cloth 9 of metal electrode 3;
S602 is as shown in figure 8, to an oxidation stone in the adhesive plaster spin coating of LCP film layers 2 and metal electrode 3 and its surface mount
Black alkene layer 8, graphene oxide layer 8 fills the space between through hole and metal electrode 3 in LCP film layers 2, and covering metal electricity
Pole 3 and adhesive plaster;
S603 is as shown in figure 9, tear the adhesive plaster on metal electrode 3;
S604 as shown in Figure 10, is heated, and the reduction of graphene oxide layer 8 turns into the stone being located in the through hole of LCP films 2
Black alkene array layer 7 and the graphene film layer 4 positioned at the top of LCP films 2, so as to be made pressure sensor.
In graphene oxide reduction process, temperature is less than the melt temperature of LCP film layers 2 and LCP substrates 1, with nitrogen
As protection gas.With nitrogen as protection gas, prevent graphene oxide from reducing not enough thoroughly and positioned at the metal electrode quilt at two ends
Oxidation,
In above-mentioned preparation method, the metal electrode at two ends is not made first, then carry out laminate patch hot pressing with LCP substrates again
Bonding.Can so cause in laminate patch hot pressing, first two ends metal electrode is pressed onto in LCP films, then two ends metal electricity
LCP films between pole and two ends metal electrode again together be forced into LCP films with the bonding of LCP substrates, two ends metal electrode,
The LCP films below the metal electrode of two ends can be made to produce irreversible deformation, then influence the through hole between the metal electrode of two ends
Shape.In this preparation method, LCP film layers 2 are bonded with LCP substrates 1 first with laminate patch hot pressing, then prepare metal electrode 3.
This effectively avoids the problem that two ends metal electrode is forced into LCP films.
In above-mentioned preparation method, laser boring is carried out in selection LCP film layers 2, then bond with LCP substrates 1.This is effective
The trueness error for avoiding directly being carried out on LCP substrates 1 caused by laser boring.Because being punched to LCP substrates 1 with laser,
The bad control in depth, and the depth in hole is only tens microns, and directly LCP substrates 1 are punched, the requirement pole to laser
Height, technology difficulty is increased, and error can also increase.This preparation method is simpler, it is easy to operate, and precision is higher.
Due to various fields such as wearable device and biomedicines, it is necessary to the accurate small shape measured on human physiology body
Become, the normal physiological activity and the healthy purpose of monitoring of people are understood so as to reach, for example, measure pulse and just will be seen that people
Whether body is sick etc..And to measure this series of minor variations, it is necessary to sensitivity sensor very high.The present invention is implemented
The force sensing resistance element of the sensor of example is made up of graphene film layer 4 and graphene array layer 7, drastically increases sensor
Sensitivity such that it is able to easily sense the minor variations of the person.In addition, graphene film layer 4 and Graphene battle array
Each Graphene individuality in row layer 7 connects together.This avoids the problem that electrode is done to graphene array, enormously simplify work
Skill step.
Claims (5)
1. a kind of preparation method of piezoresistive pressure sensor, it is characterised in that the preparation method is comprised the following steps：
The first step：The LCP film layers (2) of thin metal layer (6) are covered with to one side carries out laser boring, forming array formula structure it is logical
Hole；
Second step：LCP film layers (2) and LCP substrates (1) are bonded using laminate patch hot pressing；
3rd step：Photoresist layer (5) is coated at the two ends of the LCP film layers (2) for being covered with thin metal layer (6)；
4th step：Thin metal layer (6) to not being photo-etched glue-line (5) covering corrodes；
5th step：Removal photoresist layer (5), forms metal electrode (3)；
6th step：Graphene array layer (7) is filled in the through hole of LCP films (2), graphene film layer (4) is connected to
In LCP film layers (2), and graphene film layer (4) fills space and covering metal electrode (3) between metal electrode (3), from
And it is made pressure sensor；
The pressure sensor includes LCP substrates (1), LCP film layers (2), metal electrode (3), graphene film layer (4) and stone
Black alkene array layer (7)；LCP film layers (2) are fixedly connected on LCP substrates (1), and LCP film layers are provided with array architecture in (2)
Through hole, metal electrode (3) is connected to the top at LCP film layers (2) two ends, and graphene film layer (4) is connected to LCP film layers
(2) on, and graphene film layer (4) fills space and covering metal electrode (3) between metal electrode (3)；Graphene array
Layer (7) is filled in the through hole of LCP films (2), and graphene film layer (4) and graphene array layer (7) connection.
2. according to the preparation method of the piezoresistive pressure sensor described in claim 1, it is characterised in that described the 6th step tool
Body includes：To metal electrode (3) upper surface sticking cloth (9), then to LCP film layers (2) and metal electrode (3) and its surface
Graphene oxide layer (8) in the adhesive plaster spin coating of stickup, graphene oxide layer (8) fills the through hole and gold on LCP film layers (2)
Space between category electrode (3), and covering metal electrode (3) and adhesive plaster (9), then tear the adhesive plaster on metal electrode (3)
(9), finally heated, graphene oxide layer (8) reduction turns into the graphene array layer being located in LCP films (2) through hole
(7) graphene film layer (4) and above LCP films (2), so as to be made pressure sensor.
3. according to the preparation method of the piezoresistive pressure sensor described in claim 2, it is characterised in that described graphite oxide
In alkene layer (8) reduction process, temperature is less than LCP film layers (2) and the melt temperature of LCP substrates (1).
4. according to the preparation method of the piezoresistive pressure sensor described in claim 3, it is characterised in that described graphite oxide
In alkene layer (8) reduction process, with nitrogen as protection gas.
5. according to the preparation method of the piezoresistive pressure sensor any one of Claims 1-4, it is characterised in that
Through hole thickness in described LCP film layers (2) is 25~50 microns.
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| JP6581900B2 (en) * | 2015-12-28 | 2019-09-25 | アズビル株式会社 | Pressure sensor |
| CN106017751B (en) * | 2016-05-25 | 2018-08-10 | 东南大学 | A kind of high sensitivity piezoresistive pressure sensor and preparation method thereof |
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| CN110044523A (en) * | 2019-05-27 | 2019-07-23 | 清华大学深圳研究生院 | A kind of texture recognition array of pressure sensors and preparation method thereof |
| CN211857087U (en) * | 2020-02-24 | 2020-11-03 | 宁波激智科技股份有限公司 | Interference reducing collimation film |
| CN111879827A (en) * | 2020-06-15 | 2020-11-03 | 上海集成电路研发中心有限公司 | Flexible sensor structure and preparation method thereof |
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