CN105092117A - Piezoresistive pressure sensor and preparation method thereof - Google Patents
Piezoresistive pressure sensor and preparation method thereof Download PDFInfo
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- CN105092117A CN105092117A CN201510512767.7A CN201510512767A CN105092117A CN 105092117 A CN105092117 A CN 105092117A CN 201510512767 A CN201510512767 A CN 201510512767A CN 105092117 A CN105092117 A CN 105092117A
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Abstract
The invention discloses a piezoresistive pressure sensor and a preparation method thereof. The pressure sensor comprises an LCP substrate, an LCP thin film layer, metal electrodes, a graphene thin film layer and a graphene array layer. The LCP thin film layer is fixedly connected to the LCP substrate; the LCP thin film layer is provided with through holes in an array structure; the metal electrodes are connected above the two ends of the LCP thin film layer; the graphene thin film layer is connected on the LCP thin film layer; the graphene thin film layer fills a gap between the metal electrodes and covers the metal electrodes; and the graphene array layer fills the through holes in the LCP thin film layer, and the graphene thin film layer is connected with the graphene array layer. The piezoresistive pressure sensor not only has the advantage that the substrate can be bent and deformable, but also has good sensitivity, and can be widely applied to the fields of biomedicine and wearable equipment and the like.
Description
Technical field
The present invention relates to a kind of pressure transducer, specifically, relate to a kind of piezoresistive pressure sensor and preparation method thereof.
Background technology
Traditional silicon substrate pressure sensor, due to its substrate inflexibility distortion, causes it few in the use of the various fields such as biomedicine.Meanwhile, bending deformed flexible substrate pressure transducer is all badly in need of for use in many fields.The structure of existing silica-based piezoresistive pressure sensor makes four presser sensor resistance by the mode of diffusion or ion implantation at area of stress concentration on a square or circular silicon strain film, and four resistance interconnection form resistance bridges.The resistance change of four presser sensor resistance is caused to be converted to output voltage ambient pressure by resistance bridge, by carrying out demarcating the measurement that can realize pressure to output voltage and force value.But the silica-based piezoresistive pressure sensor of this structure is inflexibility due to it, and bio-compatibility is bad, a lot of field such as biomedicine, wearable device is caused all to be badly in need of the use of pressure transducer.
Summary of the invention
technical matters:technical matters to be solved by this invention is: provide a kind of piezoresistive pressure sensor and preparation method thereof, this pressure transducer is not only provided with the bending deformed advantage of substrate, also there is good sensitivity, the field such as biomedicine, wearable device can be widely used in.
technical scheme:for solving the problems of the technologies described above, the technical scheme that the embodiment of the present invention adopts is:
A kind of piezoresistive pressure sensor, this pressure transducer comprises LCP substrate, LCP thin layer, metal electrode, graphene film layer and graphene array layer; LCP thin layer is fixedly connected on LCP substrate, the through hole of array architecture is provided with in LCP thin layer, metal electrode is connected to the top at LCP thin layer two ends, and graphene film layer is connected on LCP thin layer, and graphene film layer fills space between metal electrode and covering metal electrode; Graphene array layer is filled in the through hole of LCP film, and graphene film layer is connected with graphene array layer.
Preferably, described LCP thin layer makes the through hole of array architecture by laser boring.
Preferably, described metal electrode is gold, silver, copper, aluminium, platinum or titanium.
Preferably, the through hole thickness in described LCP thin layer is 25 ~ 50 microns.
A preparation method for piezoresistive pressure sensor, this preparation method comprises the following steps:
The first step: LCP thin layer one side being covered with to thin metal layer carries out laser boring, the through hole of forming array formula structure;
Second step: utilize laminate patch hot pressing LCP thin layer and LCP substrate to be bonded;
3rd step: coat photoresist layer at the two ends of the LCP thin layer being covered with thin metal layer;
4th step: to not corroded by the thin metal layer that photoresist layer covers;
5th step: remove photoresist layer, forms metal electrode;
6th step: graphene array layer is filled in the through hole of LCP film, graphene film layer is connected on LCP thin layer, and graphene film layer fills space between metal electrode and covering metal electrode, thus make pressure transducer.
Preferably, the 6th described step specifically comprises: to metal electrode upper surface sticking cloth, then to a graphene oxide layer in the adhesive plaster spin coating of LCP thin layer and metal electrode and surface mount thereof, through hole on graphene oxide layer filling LCP thin layer and the space between metal electrode, and covering metal electrode and adhesive plaster, then the adhesive plaster on metal electrode is torn, finally heat, the reduction of graphene oxide layer becomes the graphene array layer be located in LCP film through hole and the graphene film layer be positioned at above LCP film, thus make pressure transducer.
Preferably, in described graphene oxide layer reduction process, temperature is lower than the melt temperature of LCP thin layer and LCP substrate.
Preferably, in described graphene oxide layer reduction process, using nitrogen as protection gas.
Preferably, the through hole thickness in described LCP thin layer is 25 ~ 50 microns.
beneficial effect:compared with existing silica-based piezoresistive pressure sensor, the present invention has following beneficial effect: utilize flexible material LCP to make substrate, thus makes the flexible distortion of pressure transducer substrate.The force sensing resistance element of pressure transducer is graphene film layer and the graphene array layer in array structure.When pressure transducer is when the flex under action of external force is out of shape, graphene film layer can deformation thereupon, graphene film layer resistance is increased, certain compression can be there is in the graphene array layer being simultaneously arranged in LCP thin layer on longitudinal thickness, the asymmetry of carbon atom in Graphene is increased, and then cause the energy gap of Graphene to increase, energy state density near Fermi level reduces, transmission raceway groove reduces, the transmission coefficient of Graphene is reduced, resistivity increases, and resistance also increases thereupon.The sensitivity of pressure transducer is substantially increased by arranging graphene film layer and graphene array layer.The pressure transducer of the present embodiment, because pressure transducer still can well work in the diastrophic situation of substrate, compensate for the defect of traditional silica-based piezoresistive pressure sensor inflexibility distortion, and the pressure sensor structure of array makes the sensitivity of pressure transducer be greatly improved, the fields such as biomedical and wearable device can be widely used in.
Accompanying drawing explanation
Fig. 1 is the structure cut-open view of the embodiment of the present invention.
Fig. 2 is the structural representation of preparation method's first step in the embodiment of the present invention.
Fig. 3 is the structural representation of preparation method's second step in the embodiment of the present invention.
Fig. 4 is the structural representation of preparation method the 3rd step in the embodiment of the present invention.
Fig. 5 is the structural representation of preparation method the 4th step in the embodiment of the present invention.
Fig. 6 is the structural representation of preparation method the 5th step in the embodiment of the present invention.
Fig. 7 is the structural representation of S601 in preparation method the 6th step in the embodiment of the present invention.
Fig. 8 is the structural representation of S602 in preparation method the 6th step in the embodiment of the present invention.
Fig. 9 is the structural representation of S603 in preparation method the 6th step in the embodiment of the present invention.
Figure 10 is the structural representation of S604 in preparation method the 6th step in the embodiment of the present invention.
Have in figure: LCP substrate 1, LCP thin layer 2, metal electrode 3, graphene film layer 4, photoresist layer 5, thin metal layer 6, graphene array layer 7, graphene oxide layer 8, adhesive plaster 9.
Embodiment
Below in conjunction with accompanying drawing, the technical scheme of the embodiment of the present invention is described in detail.
As shown in Figure 1, a kind of piezoresistive pressure sensor of the embodiment of the present invention, comprises LCP substrate 1, LCP thin layer 2, metal electrode 3, graphene film layer 4 and graphene array layer 7.LCP thin layer 2 is fixedly connected on LCP substrate 1, is provided with the through hole of array architecture in LCP thin layer 2, and metal electrode 3 is connected to the top at LCP thin layer 2 two ends.Graphene film layer 4 is connected on LCP thin layer 2, and graphene film layer 4 fills space between metal electrode 3 and covering metal electrode 3.Graphene array layer 7 is filled in the through hole of LCP film 2, and graphene film layer 4 is connected with graphene array layer 7.
Polymeric liquid crystal copolymer (being called for short LCP in literary composition) is the polymer substance that a kind of mobility that be made up of rigid molecule chain, existing liquid under certain physical condition has again the physical property anisotropy (this state is called liquid crystal state) of crystal.Polymeric liquid crystal copolymer has the advantage of many uniquenesses, such as loss is little, cost is low, frequency of utilization scope is large, intensity is high, lightweight, thermotolerance and anti-flammability is strong, linear expansion coefficient is little, corrosion resistance and radiation resistance forming temperature that is good, CP film low, there is the excellent moulding processability of flexible and foldability, can be used for various band arc and the bending goods waiting complicated shape.This meets the bending deformed pressure transducer of substrate completely to the requirement of substrate.Because the pliability of LCP is fine, Young modulus between 5 ~ 20Gpa, well below monocrystalline silicon and polysilicon.Under the effect of uniform pressure, the Bending Deformation of LCP substrate 1 can be larger, causes the deformation of the graphene film layer 4 on it also larger.So adopt LCP also to have the effect increasing sensitivity as substrate.In addition, have employed LCP material and just make it possible to make substrate and force sensing resistance element two array architectures, thus the sensitivity of sensor is greatly improved.
The course of work of the piezoresistive pressure sensor of said structure is: when pressure transducer is when the flex under action of external force is out of shape, graphene film layer 4 meeting deformation thereupon, the resistance of graphene film layer 4 is increased, certain compression can be there is in the graphene array layer 7 simultaneously in LCP thin layer 2 on longitudinal thickness, the asymmetry of carbon atom in Graphene is increased, and then cause the energy gap of Graphene to increase, energy state density near Fermi level reduces, transmission raceway groove reduces, the transmission coefficient of Graphene is reduced, resistivity increases, resistance also increases thereupon.The resistance variations of the graphene array layer 7 in graphene film layer 4 and LCP thin layer 2 can be measured by metal electrode 3, then reaches the object of the value measuring external pressure.
In the piezoresistive pressure sensor of this structure, being provided with the through hole of array architecture in LCP thin layer 2, is to form graphene array layer 7.The force sensing resistance element of sensor is made up of two parts, is graphene array layer 7 and graphene film layer 4 respectively.Force sensing resistance element in this structure can improve the sensitivity of sensor.When ambient pressure acts on pressure transducer, graphene film layer 4 bends deformation, causes its resistance also to increase thereupon.When ambient pressure acts on pressure transducer, graphene array layer 7 in LCP thin layer 2 compresses on longitudinal thickness, the asymmetry of carbon atom in Graphene is increased, and then cause the energy gap of Graphene to increase, energy state density near Fermi level reduces, transmission raceway groove reduces, the transmission coefficient of Graphene is reduced, and resistivity increases, and resistance also increases thereupon.Like this, form the graphene array layer 7 of force sensing resistance element and being combined of graphene film layer 4, substantially increase the sensitivity of sensor.
In the piezoresistive pressure sensor of this structure, the through hole of distribution array formula structure in LCP thin layer 2, graphene array layer 7 is arranged in the through hole of LCP thin layer 2, and these two array architectures link together, and forms the array architecture of sensor.Graphene array layer 7 in the through hole of array architecture links together with graphene film layer 4, contributes to graphene film layer 4 and better adheres to each other with LCP thin layer 2, be not easy to come off.
Preferably, described LCP thin layer 2 makes the through hole of array architecture by laser boring.Through hole thickness in LCP thin layer 2 is 25 ~ 50 microns.Thickness due to through hole is micron order, so adopt laser boring, makes the through hole of array architecture.
Preferably, described metal electrode 3 is gold, silver, copper, aluminium, platinum or titanium.Certainly, other metals also can as metal electrode.
A preparation method for above-mentioned piezoresistive pressure sensor, this preparation method comprises the following steps:
The first step: as shown in Figure 2, the LCP thin layer 2 one side being covered with to thin metal layer 6 carries out laser boring, the through hole of forming array formula structure; Through hole thickness is 25 ~ 50 microns.
Second step: as shown in Figure 3, utilizes laminate patch hot pressing LCP thin layer 2 and LCP substrate 1 to be bonded.
3rd step: as shown in Figure 4, coats photoresist layer 5 at the two ends of the LCP thin layer 2 being covered with thin metal layer 6.
4th step: as shown in Figure 5, corrodes the thin metal layer 6 do not covered by photoresist layer 5.
5th step: as shown in Figure 6, removes photoresist layer 5, forms metal electrode 3.
6th step: graphene array layer 7 is filled in the through hole of LCP film 2, graphene film layer 4 is connected on LCP thin layer 2, and graphene film layer 4 fills space between metal electrode 3 and covering metal electrode 3, thus make pressure transducer.
6th step specifically comprises following process:
S601 as shown in Figure 7, to metal electrode 3 upper surface sticking cloth 9;
As shown in Figure 8, to a graphene oxide layer 8 in the adhesive plaster spin coating of LCP thin layer 2 and metal electrode 3 and surface mount thereof, graphene oxide layer 8 fills the space between through hole on LCP thin layer 2 and metal electrode 3 to S602, and covering metal electrode 3 and adhesive plaster;
S603 as shown in Figure 9, tears the adhesive plaster on metal electrode 3;
S604 as shown in Figure 10, heats, and graphene oxide layer 8 reduction becomes the graphene array layer 7 be located in LCP film 2 through hole and the graphene film layer 4 be positioned at above LCP film 2, thus makes pressure transducer.
In graphene oxide reduction process, temperature lower than the melt temperature of LCP thin layer 2 and LCP substrate 1, using nitrogen as protection gas.Using nitrogen as protection gas, prevent graphene oxide from reducing not thoroughly oxidized with the metal electrode being positioned at two ends,
In above-mentioned preparation method, first do not make the metal electrode at two ends, and then carry out laminate patch heat pressure adhesive with LCP substrate.Can cause like this in laminate patch hot pressing, first two ends metal electrode is pressed onto in LCP film, then the LCP film between two ends metal electrode with two ends metal electrode again together with bond with LCP substrate, two ends metal electrode is forced in LCP film, the LCP film below the metal electrode of two ends can be made to produce irreversible deformation, then affect the shape of the through hole between the metal electrode of two ends.In this preparation method, first utilize laminate patch hot pressing LCP thin layer 2 and LCP substrate 1 to be bonded, then prepare metal electrode 3.This effectively avoids two ends metal electrode and is forced into problem in LCP film.
In above-mentioned preparation method, select to carry out laser boring in LCP thin layer 2, then bond with LCP substrate 1.This is effectively avoided the direct trueness error of carrying out laser boring and causing on LCP substrate 1.Because punch to LCP substrate 1 with laser, bad control in the degree of depth, and the degree of depth in hole is only tens microns, directly punches to LCP substrate 1, high to the requirement of laser instrument, technology difficulty strengthens, and error also can increase.This preparation method is more simple, and be easy to operation, precision is higher.
Due to the various fields such as wearable device and biomedicine, need accurately to measure the miniature deformation on human physiology body, thus reach the normal physiological activity and the healthy object of monitoring of understanding people, whether such as measuring pulse, just can to understand human body sick etc.And this series of subtle change will be measured, just need the sensor that sensitivity is very high.The force sensing resistance element of the sensor of the embodiment of the present invention is made up of graphene film layer 4 and graphene array layer 7, drastically increases the sensitivity of sensor, thus can sense the subtle change of the person easily.In addition, each Graphene individuality in graphene film layer 4 and graphene array layer 7 connects together.Which avoid the problem doing electrode to graphene array, enormously simplify processing step.
Claims (9)
1. a piezoresistive pressure sensor, is characterized in that, this pressure transducer comprises LCP substrate (1), LCP thin layer (2), metal electrode (3), graphene film layer (4) and graphene array layer (7);
LCP thin layer (2) is fixedly connected on LCP substrate (1), the through hole of array architecture is provided with in LCP thin layer (2), metal electrode (3) is connected to the top at LCP thin layer (2) two ends, graphene film layer (4) is connected on LCP thin layer (2), and graphene film layer (4) fills space between metal electrode (3) and covering metal electrode (3); Graphene array layer (7) is filled in the through hole of LCP film (2), and graphene film layer (4) is connected with graphene array layer (7).
2. according to piezoresistive pressure sensor according to claim 1, it is characterized in that, described LCP thin layer (2) makes the through hole of array architecture by laser boring.
3. according to piezoresistive pressure sensor according to claim 1, it is characterized in that, described metal electrode (3) be gold, silver, copper, aluminium, platinum or titanium.
4. according to piezoresistive pressure sensor according to claim 1, it is characterized in that, the through hole thickness in described LCP thin layer (2) is 25 ~ 50 microns.
5. a preparation method for piezoresistive pressure sensor according to claim 1, is characterized in that, this preparation method comprises the following steps:
The first step: the LCP thin layer (2) one side being covered with to thin metal layer (6) carries out laser boring, the through hole of forming array formula structure;
Second step: utilize laminate patch hot pressing LCP thin layer (2) and LCP substrate (1) to be bonded;
3rd step: coat photoresist layer (5) at the two ends of the LCP thin layer (2) being covered with thin metal layer (6);
4th step: the thin metal layer (6) do not covered by photoresist layer (5) is corroded;
5th step: remove photoresist layer (5), forms metal electrode (3);
6th step: graphene array layer (7) is filled in the through hole of LCP film (2), graphene film layer (4) is connected on LCP thin layer (2), and graphene film layer (4) fills space between metal electrode (3) and covering metal electrode (3), thus make pressure transducer.
6. according to the preparation method of piezoresistive pressure sensor according to claim 5, it is characterized in that, the 6th described step specifically comprises: to metal electrode (3) upper surface sticking cloth (9), then to a graphene oxide layer (8) in the adhesive plaster spin coating of LCP thin layer (2) and metal electrode (3) and surface mount thereof, through hole on graphene oxide layer (8) filling LCP thin layer (2) and the space between metal electrode (3), and covering metal electrode (3) and adhesive plaster (9), then the adhesive plaster (9) on metal electrode (3) is torn, finally heat, graphene oxide layer (8) reduction becomes the graphene array layer (7) be located in LCP film (2) through hole and the graphene film layer (4) being positioned at LCP film (2) top, thus make pressure transducer.
7. according to the preparation method of piezoresistive pressure sensor according to claim 6, it is characterized in that, in described graphene oxide layer (8) reduction process, temperature is lower than the melt temperature of LCP thin layer (2) and LCP substrate (1).
8. according to the preparation method of piezoresistive pressure sensor according to claim 7, it is characterized in that, in described graphene oxide layer (8) reduction process, using nitrogen as protection gas.
9. according to the preparation method of the piezoresistive pressure sensor in claim 5 to 8 described in any one, it is characterized in that, the through hole thickness in described LCP thin layer (2) is 25 ~ 50 microns.
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| CN109425447A (en) * | 2017-09-04 | 2019-03-05 | 北京清正泰科技术有限公司 | A kind of microstrain graphene sensor and its manufacturing method |
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