CN105007690A - Method for manufacturing arc-shaped high-frequency ceramic module substrate - Google Patents
Method for manufacturing arc-shaped high-frequency ceramic module substrate Download PDFInfo
- Publication number
- CN105007690A CN105007690A CN201510409153.6A CN201510409153A CN105007690A CN 105007690 A CN105007690 A CN 105007690A CN 201510409153 A CN201510409153 A CN 201510409153A CN 105007690 A CN105007690 A CN 105007690A
- Authority
- CN
- China
- Prior art keywords
- arc
- tigao
- frequency ceramic
- substrate
- bonding sheet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
Abstract
A method for manufacturing an arc-shaped high-frequency ceramic module substrate comprises the steps of (1) manufacturing an insulating medium layer of an arc-shaped high-frequency ceramic substrate, placing nanometer rutile powder (TiO2) into a ball grinder, performing high-temperature grinding for a certain time period, then mixing a substrate medium material with a waterborne polyurethane (PU) adhesive into an arc-shaped mold, and forming a substrate insulating medium layer through high-temperature pressing; (2) manufacturing an arc-shaped high-frequency ceramic substrate bonding sheet, placing polytetrafluoroethylene into an adhesive impregnation machine for performing pre-impregnation, and then performing high-temperature sintering for preparing a polytetrafluoroethylene PP film bonding sheet; and (3) preparing the arc-shaped high-frequency ceramic substrate, selecting a copper foil layers, the insulating medium layer and the polytetrafluoroethylene PP film bonding sheet, respectively arranging copper foils above and below the insulating medium layer, and separating by means of the polytetrafluoroethylene PP film bonding sheet and bonding layers, and finally performing pressing in a high-temperature environment for molding. The method of the invention has advantages of improving quality factor of a circuit system and improving the comprehensive performance of a product.
Description
Technical field
The present invention relates to high-frequency circuit board, especially relate to the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate.
Background technology
Electronic equipment high frequency is development trend, especially wireless network, satellite communication growing, information products move towards at a high speed and high frequency, and communication products move towards the voice of the large fireballing wireless transmission of capacity, video and data normalization.Therefore the new generation product developed all needs high frequency substrate, and satellite system, mobile phone receive the communication products such as base station must apply high-frequency circuit board.
Arc Qu Tigao is a kind of three-dimensional high-frequency circuit board of ceramic module substrate frequently, is mainly used in the electronics military industry fields such as guided missile signal, reflector, wireless sensing, electronic jamming.
Summary of the invention
For overcoming the problems referred to above, the present invention adopts following technical scheme:
A manufacture method for arc Qu Tigao frequency ceramic module substrate, is characterized in that, comprising:
(1) insulating medium layer of arc Qu Tigao frequency ceramic substrate is made, nanometer rutile powder (TiO2) is inserted ball mill, the dielectric material of substrate is formed through high energy ball milling a period of time, then substrate media material is mixed into a certain proportion of aqueous polyurethane (PU) adhesive and is placed in arcuate die simultaneously, form substrate insulating medium layer through high-temperature laminating;
(2) make arc Qu Tigao ceramic substrate bonding sheet frequently, polyflon is inserted cement dipping machine and carry out pre-preg, then obtained polytetrafluoroethylene PP film bonding sheet after high temperature sintering;
(3) arc Qu Tigao ceramic substrate is frequently made, choose copper foil layer, insulating medium layer, polytetrafluoroethylene PP film bonding sheet, Copper Foil is separately positioned on above and below insulating medium layer, polytetrafluoroethylene PP film bonding sheet interval, centre also bonds, compressing finally by hot environment processing with pressure.
In described step (1), ball mill Ball-milling Time is 48 hours.
The dielectric material that in described step (1), polyphenylene oxide (PPO) powder and polystyrene (PS) powder are mixed is placed in mould and forms substrate insulating medium layer through 250 DEG C of temperature pressings.
Choose the teflon resin powder that thickness is less than 0.025mm in described step (2) and carry out pre-preg through cement dipping machine, then obtained described polytetrafluoroethylene PP film bonding sheet after 260 ~ 270 DEG C of high temperature sinterings.
The thickness that in described step (3), copper foil layer adopts is 35um-280um.
In described step (3), hot environment is 350 ± 10 DEG C.
Advantage of the present invention is: can according to the demand of circuit design, the radian of adjustment high-frequency ceramic substrate, with the use of the metal material of high conductivity as conductor material, be conducive to the quality factor improving Circuits System, add the flexibility of circuit design, enable the more realistic installation requirements of product, thus improve the combination property of product.
Embodiment
The invention provides the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate, it comprises the following steps: step one, make the insulating medium layer of arc Qu Tigao frequency ceramic module substrate, require to select mix proportion scheme according to dielectric constant, nanometer rutile powder (TiO2) is adopted to control by thickness of dielectric layers requirement, within 48 hours, form dielectric material through ball mill ball milling, then dielectric material is placed in arcuate die and forms insulating medium layer through 280 ~ 300 DEG C of high-temperature laminatings; Step 2, make arc Qu Tigao ceramic substrate bonding sheet frequently, choose the teflon resin powder that thickness is less than 0.025mm and carry out pre-preg through cement dipping machine, then obtained polytetrafluoroethylene PP film bonding sheet after sintering under 260 ~ 270 DEG C of high temperature; Step 3, make arc Qu Tigao ceramic module substrate frequently, choosing thickness is 35um-280um copper foil layer, insulating medium layer, polytetrafluoroethylene PP film bonding sheet, be separately positioned on by Copper Foil above and below insulating medium layer, polytetrafluoroethylene PP film bonding sheet interval, centre also bonds, compressing finally by 350 ± 10 DEG C of hot environment processing with pressure.
The above; be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; change can be expected easily or replace, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of described claim.
Claims (6)
1. a manufacture method for arc Qu Tigao frequency ceramic module substrate, is characterized in that, comprising:
(1) insulating medium layer of arc Qu Tigao frequency ceramic substrate is made, nanometer rutile powder (TiO2) is inserted ball mill, the dielectric material of substrate is formed through high energy ball milling a period of time, then substrate media material is mixed into a certain proportion of aqueous polyurethane (PU) adhesive and is placed in arcuate die simultaneously, form substrate insulating medium layer through high-temperature laminating;
(2) make arc Qu Tigao ceramic substrate bonding sheet frequently, polyflon is inserted cement dipping machine and carry out pre-preg, then obtained polytetrafluoroethylene PP film bonding sheet after high temperature sintering;
(3) arc Qu Tigao ceramic substrate is frequently made, choose copper foil layer, insulating medium layer, polytetrafluoroethylene PP film bonding sheet, Copper Foil is separately positioned on above and below insulating medium layer, polytetrafluoroethylene PP film bonding sheet interval, centre also bonds, compressing finally by hot environment processing with pressure.
2. the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate according to claim 1, is characterized in that: in described step (1), ball mill Ball-milling Time is 48 hours.
3. the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate according to claim 1, is characterized in that: the dielectric material that in described step (1), polyphenylene oxide (PPO) powder and polystyrene (PS) powder are mixed is placed in mould and forms substrate insulating medium layers through 250 DEG C of temperature pressings.
4. the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate according to claim 1, it is characterized in that: choose the teflon resin powder that thickness is less than 0.025mm in described step (2) and carry out pre-preg through cement dipping machine, then obtained described polytetrafluoroethylene PP film bonding sheet after 260 ~ 270 DEG C of high temperature sinterings.
5. the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate according to claim 1, is characterized in that: the thickness that in described step (3), copper foil layer adopts is 35um-280um.
6. the manufacture method of a kind of arc Qu Tigao frequency ceramic module substrate according to claim 1, is characterized in that: in described step (3), hot environment is 350 ± 10 DEG C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510409153.6A CN105007690A (en) | 2015-07-14 | 2015-07-14 | Method for manufacturing arc-shaped high-frequency ceramic module substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510409153.6A CN105007690A (en) | 2015-07-14 | 2015-07-14 | Method for manufacturing arc-shaped high-frequency ceramic module substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105007690A true CN105007690A (en) | 2015-10-28 |
Family
ID=54380146
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510409153.6A Pending CN105007690A (en) | 2015-07-14 | 2015-07-14 | Method for manufacturing arc-shaped high-frequency ceramic module substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN105007690A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4631160A (en) * | 1980-12-15 | 1986-12-23 | Coors Porcelain Company | Method of manufacturing ceramic substrate for fine-line electrical circuitry |
| CN101981631A (en) * | 2008-04-04 | 2011-02-23 | 国立大学法人东北大学 | Composite material, and method for manufacturing the same |
| CN103547074A (en) * | 2013-10-13 | 2014-01-29 | 朱云霞 | High frequency metal core circuit substrate production method |
| CN104582291A (en) * | 2014-12-22 | 2015-04-29 | 泰州市博泰电子有限公司 | Manufacturing method of high-frequency LTCC circuit module substrate |
| CN104602454A (en) * | 2014-12-22 | 2015-05-06 | 泰州市博泰电子有限公司 | Production method of PTFE (Poly Tetra Fluoro Ethylene) high-frequency metal matrix nano composite circuit substrate |
-
2015
- 2015-07-14 CN CN201510409153.6A patent/CN105007690A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4631160A (en) * | 1980-12-15 | 1986-12-23 | Coors Porcelain Company | Method of manufacturing ceramic substrate for fine-line electrical circuitry |
| CN101981631A (en) * | 2008-04-04 | 2011-02-23 | 国立大学法人东北大学 | Composite material, and method for manufacturing the same |
| CN103547074A (en) * | 2013-10-13 | 2014-01-29 | 朱云霞 | High frequency metal core circuit substrate production method |
| CN104582291A (en) * | 2014-12-22 | 2015-04-29 | 泰州市博泰电子有限公司 | Manufacturing method of high-frequency LTCC circuit module substrate |
| CN104602454A (en) * | 2014-12-22 | 2015-05-06 | 泰州市博泰电子有限公司 | Production method of PTFE (Poly Tetra Fluoro Ethylene) high-frequency metal matrix nano composite circuit substrate |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108790327B (en) | High-performance copper-clad plate with polytetrafluoroethylene filled film and composite glass cloth and manufacturing process thereof | |
| CN108724900A (en) | A kind of preparation method of dry method microwave complex media plate | |
| JP3238556U (en) | Application molding method for new material layer structure of high frequency wiring board and its product | |
| CN102523685A (en) | Manufacturing method for printed circuit board (PCB) with stepped grooves | |
| CN108358505B (en) | Fluororesin intermediate medium layer filled with microwave dielectric ceramic powder and preparation method thereof | |
| JP2007129039A (en) | Fluorine resin printed circuit board and manufacturing method thereof | |
| CN110678014A (en) | Method for manufacturing multilayer flexible circuit board and product thereof | |
| CN114094317B (en) | Multilayer composite material strip line antenna, integrated forming die and method | |
| CN103000369A (en) | Method for preparing high voltage-resisting chip type ceramic capacitor | |
| CN106132118B (en) | A kind of complex media method of manufacturing circuit board of multilayer dielectricity circuit | |
| CN104064336B (en) | graphite coil planar pulse transformer | |
| CN105007690A (en) | Method for manufacturing arc-shaped high-frequency ceramic module substrate | |
| CN102689464A (en) | Metamaterial composite plates and processing method thereof | |
| CN106488666A (en) | A kind of resistance gluing method for PCB blind slot | |
| CN102673046B (en) | A kind of Metamaterial composite plate and preparation method | |
| CN111548586A (en) | Polymer-based composite heat conduction material and preparation method and application thereof | |
| CN104582291A (en) | Manufacturing method of high-frequency LTCC circuit module substrate | |
| CN113910738A (en) | Copper-clad plate processing technology | |
| CN102775731B (en) | Glue solution for preparing FR-4 (fiberglass board) copper-clad plate and preparation method | |
| CN103287016A (en) | Copper foil layer-clad laminate and preparation method thereof | |
| CN104602454A (en) | Production method of PTFE (Poly Tetra Fluoro Ethylene) high-frequency metal matrix nano composite circuit substrate | |
| CN214083260U (en) | PTFE high-frequency high-speed copper-clad plate | |
| CN111867243A (en) | Preparation method of novel material layer structure of high-frequency circuit board and product thereof | |
| CN112248339B (en) | Housing, method for manufacturing housing, and electronic apparatus | |
| CN112389044A (en) | PTFE high-frequency high-speed copper-clad plate and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20151028 |
|
| WD01 | Invention patent application deemed withdrawn after publication |