CN104975291B - 制备铁酸铋薄膜的装置、方法及制备太阳能电池的方法 - Google Patents
制备铁酸铋薄膜的装置、方法及制备太阳能电池的方法 Download PDFInfo
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- CN104975291B CN104975291B CN201510372226.9A CN201510372226A CN104975291B CN 104975291 B CN104975291 B CN 104975291B CN 201510372226 A CN201510372226 A CN 201510372226A CN 104975291 B CN104975291 B CN 104975291B
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- CN
- China
- Prior art keywords
- thin film
- bismuth ferrite
- ferrite thin
- texture characteristic
- crucible body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000010409 thin film Substances 0.000 title claims abstract description 104
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 96
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 96
- 229910000859 α-Fe Inorganic materials 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims abstract description 66
- 239000000758 substrate Substances 0.000 claims abstract description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 27
- 239000001301 oxygen Substances 0.000 claims abstract description 26
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 26
- 238000000137 annealing Methods 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 46
- 238000000151 deposition Methods 0.000 claims description 24
- 238000002360 preparation method Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 18
- 239000007789 gas Substances 0.000 claims description 12
- 239000010453 quartz Substances 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 239000003708 ampul Substances 0.000 claims description 10
- 238000000224 chemical solution deposition Methods 0.000 claims description 7
- 238000003980 solgel method Methods 0.000 claims description 7
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- 239000007792 gaseous phase Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 6
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 5
- 239000013049 sediment Substances 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 238000009423 ventilation Methods 0.000 claims description 4
- 239000010432 diamond Substances 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 3
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 7
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 7
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- 238000012876 topography Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910002075 lanthanum strontium manganite Inorganic materials 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910002182 La0.7Sr0.3MnO3 Inorganic materials 0.000 description 2
- 244000137852 Petrea volubilis Species 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 238000004062 sedimentation Methods 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 1
- 244000025254 Cannabis sativa Species 0.000 description 1
- 229910002518 CoFe2O4 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910052571 earthenware Inorganic materials 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910000473 manganese(VI) oxide Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000013087 polymer photovoltaic Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
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CN201510372226.9A CN104975291B (zh) | 2015-06-30 | 2015-06-30 | 制备铁酸铋薄膜的装置、方法及制备太阳能电池的方法 |
Applications Claiming Priority (1)
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CN201510372226.9A CN104975291B (zh) | 2015-06-30 | 2015-06-30 | 制备铁酸铋薄膜的装置、方法及制备太阳能电池的方法 |
Publications (2)
Publication Number | Publication Date |
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CN104975291A CN104975291A (zh) | 2015-10-14 |
CN104975291B true CN104975291B (zh) | 2017-06-13 |
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CN201510372226.9A Active CN104975291B (zh) | 2015-06-30 | 2015-06-30 | 制备铁酸铋薄膜的装置、方法及制备太阳能电池的方法 |
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Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106129243A (zh) * | 2016-07-04 | 2016-11-16 | 中国科学院上海硅酸盐研究所 | 一种氮化镓基铁酸铋铁电薄膜及其制备方法 |
CN107604408B (zh) * | 2017-08-25 | 2019-11-08 | 洛阳师范学院 | 一种铁酸铋薄膜及其制备方法 |
CN115432738A (zh) * | 2022-09-05 | 2022-12-06 | 南京理工大学 | 一种沉积非晶层的BiFeO3薄膜及其制备方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1313414C (zh) * | 2005-04-08 | 2007-05-02 | 南京大学 | 淬火法制备单相BiFeO3陶瓷的方法 |
JP2011190138A (ja) * | 2010-03-15 | 2011-09-29 | National Institute Of Advanced Industrial Science & Technology | 電気磁気効果単結晶の製造方法 |
CN202452829U (zh) * | 2012-02-22 | 2012-09-26 | 东营瑞海新材料有限公司 | 工业用带盖石英玻璃坩埚 |
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Effective date of registration: 20201210 Address after: Building 647, Century Avenue, Chongfu Town, Tongxiang City, Jiaxing City, Zhejiang Province Patentee after: Jiaxing Juteng Information Technology Co.,Ltd. Address before: 401331 Chongqing city Shapingba District hogye University City, Chongqing University of Science and Technology Patentee before: Chongqing University of Science & Technology |
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Application publication date: 20151014 Assignee: Wenling Oudian Shoes Co.,Ltd. Assignor: Jiaxing Juteng Information Technology Co.,Ltd. Contract record no.: X2024980005261 Denomination of invention: Device, method for preparing bismuth ferrite thin film and method for preparing solar cells Granted publication date: 20170613 License type: Common License Record date: 20240506 Application publication date: 20151014 Assignee: WENLING CITY ANTONG ELECTRIC APPLIANCE Co.,Ltd. Assignor: Jiaxing Juteng Information Technology Co.,Ltd. Contract record no.: X2024980005260 Denomination of invention: Device, method for preparing bismuth ferrite thin film and method for preparing solar cells Granted publication date: 20170613 License type: Common License Record date: 20240506 Application publication date: 20151014 Assignee: Zhejiang Yuanhua Machinery Co.,Ltd. Assignor: Jiaxing Juteng Information Technology Co.,Ltd. Contract record no.: X2024980005232 Denomination of invention: Device, method for preparing bismuth ferrite thin film and method for preparing solar cells Granted publication date: 20170613 License type: Common License Record date: 20240506 Application publication date: 20151014 Assignee: Qianjiang Group Qiangjiang Electromechanical (Wenling) Co.,Ltd. Assignor: Jiaxing Juteng Information Technology Co.,Ltd. Contract record no.: X2024980005230 Denomination of invention: Device, method for preparing bismuth ferrite thin film and method for preparing solar cells Granted publication date: 20170613 License type: Common License Record date: 20240506 Application publication date: 20151014 Assignee: WENLING DELIZHONG MACHINERY MANUFACTURING Co.,Ltd. Assignor: Jiaxing Juteng Information Technology Co.,Ltd. Contract record no.: X2024980005229 Denomination of invention: Device, method for preparing bismuth ferrite thin film and method for preparing solar cells Granted publication date: 20170613 License type: Common License Record date: 20240506 |